JPH03154066A - Production of electrophotographic sensitive body - Google Patents

Production of electrophotographic sensitive body

Info

Publication number
JPH03154066A
JPH03154066A JP29421389A JP29421389A JPH03154066A JP H03154066 A JPH03154066 A JP H03154066A JP 29421389 A JP29421389 A JP 29421389A JP 29421389 A JP29421389 A JP 29421389A JP H03154066 A JPH03154066 A JP H03154066A
Authority
JP
Japan
Prior art keywords
photosensitive layer
layer
conductive substrate
selenium
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29421389A
Other languages
Japanese (ja)
Inventor
Keiichi Kurokawa
恵市 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP29421389A priority Critical patent/JPH03154066A/en
Publication of JPH03154066A publication Critical patent/JPH03154066A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enhance the adhesive property of a surface protective layer consisting of an org. material and to prevent peeling by forming a photosensitive layer consisting of a selenium material in such a manner that ten-point mean roughness and the max. height attain specific values. CONSTITUTION:The temp. of a conductive base body 1 is held at >=50 deg.C to the glass transition temp. of a selenium material or below and the selenium material is deposited by vacuum evaporation to form the photosensitive layer 2 having the surface roughness within the range of 0.3 to 0.8mum ten-point mean roughness Rz and <=1.0mum max. height. The surface protective layer 3 consisting of an org. material is then applied and formed on the layer 2. The layer 2 can be formed of As2Se3 (170 deg.C glass transition temp.) and the layer 3 of alkoxyorgano silanol and acryl polyol.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電子写真装置に用いられるセレン系材料か
らなる感光層とその上に設けられた有機材料からなる表
面保護層を備えた電子写真用感光体の製造方法に関する
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electrophotographic device that is used in an electrophotographic device and includes a photosensitive layer made of a selenium-based material and a surface protective layer made of an organic material provided thereon. The present invention relates to a method of manufacturing a photoreceptor for use in a photoreceptor.

〔従来の技術〕[Conventional technology]

近年、電子写真装置で得られる画像の品質についての要
求がますます厳しくなってきている。この要求を満たし
、電子写真用感光体の表面の損傷。
In recent years, requirements regarding the quality of images obtained with electrophotographic devices have become increasingly strict. This requirement is met by damage to the surface of electrophotographic photoreceptors.

変質を防ぎ、画像品質を向上させ、長期間にわたつて良
質な画像を安定して得るために、感光層上に表面保護層
を設けることが提案されている。
In order to prevent deterioration, improve image quality, and stably obtain high-quality images over a long period of time, it has been proposed to provide a surface protective layer on the photosensitive layer.

例えば、特開昭58−139154号公報、 特開昭5
8=217942号公報、特開昭57−16459号公
報で提案されている、架橋ポリマーや共重合体を保護層
として設ける方法、特開昭57−204559号公報、
特開昭5638055号公報で提案されている、ふっ素
樹脂、シリコン樹脂、ポリエステル樹脂、芳香族ポリア
ミド樹脂などを保護層として設ける方法、また、特開昭
58−130343号公報、 特開昭57−30846
号公報で提案されている、金属、金属酸化物などの無機
物を含有した高分子樹脂層を保護層として設ける方法な
どが提案されている。
For example, JP-A-58-139154, JP-A-5
8=217942, a method of providing a crosslinked polymer or copolymer as a protective layer proposed in JP-A-57-16459, JP-A-57-204,559,
A method of providing a protective layer using fluororesin, silicone resin, polyester resin, aromatic polyamide resin, etc., as proposed in JP-A-5638055, and JP-A-58-130343 and JP-A-57-30846.
A method of providing a polymeric resin layer containing an inorganic material such as a metal or a metal oxide as a protective layer, as proposed in the above publication, has been proposed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、セレン系材料からなる感光層を備えたセ
レン感光体の場合、その無a質の感光層表面と上述のよ
うな有機材料とは一般にぬれ性が悪くて塗膜の形成が難
しく、また、保護層が熱硬化膜の場合には焼成工程での
熱膨張差が問題となり、さらに、感光層と保護層との密
着性が弱くて、電子写真プロセスで感光体表面に加わる
機械的ストレスにより保護層が剥離しやすいという問題
があった。
However, in the case of a selenium photoreceptor having a photosensitive layer made of a selenium-based material, the surface of the aluminous photosensitive layer and the above-mentioned organic material generally have poor wettability, making it difficult to form a coating film. When the protective layer is a thermoset film, the difference in thermal expansion during the baking process becomes a problem, and furthermore, the adhesion between the photosensitive layer and the protective layer is weak, and the mechanical stress applied to the surface of the photoreceptor during the electrophotographic process causes protection. There was a problem that the layers easily peeled off.

この発明は、上述の問題点を解消して、セレン感光層上
に有機材料を電子写真特性を損なうことなく強固に付着
させ、密着性の優れた表面保護層を形成する電子写真用
感光体の製造方法を提供することを課題とする。
The present invention solves the above-mentioned problems and provides an electrophotographic photoreceptor in which an organic material is firmly adhered to a selenium photosensitive layer without impairing the electrophotographic properties, thereby forming a surface protective layer with excellent adhesion. The objective is to provide a manufacturing method.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題は、この発明によれば、導電性基体上にセレン
系材料からなる感光層とその上に設けられた有機材料か
らなる表面保護層を備えてなる電子写真用感光体の製造
方法において、導電性基体の温度を50℃以上前記セレ
ン系材料のガラス転移温度未満の範囲内の温度に保持し
、この導電性基体上に前記セレン系材料を真空蒸着する
ことにより 表面粗さが十点平均粗さRzで0.3μm
以上0.8μm以下の範囲内にありかつ最大高さRma
xで1.0μm以下である感光層を形成し、その上に有
機材料からなる表面保護層を形成する製造方法とするこ
とによって解決される。
According to the present invention, the above problem is solved in a method for manufacturing an electrophotographic photoreceptor comprising a photosensitive layer made of a selenium-based material on a conductive substrate and a surface protection layer made of an organic material provided thereon. By maintaining the temperature of the conductive substrate within a range of 50° C. or higher and lower than the glass transition temperature of the selenium-based material, and vacuum-depositing the selenium-based material onto the conductive substrate, the surface roughness is reduced to a 10-point average. Roughness Rz: 0.3μm
The maximum height is within the range of 0.8 μm or more and the maximum height is Rma
This problem can be solved by forming a photosensitive layer having x of 1.0 μm or less, and forming a surface protective layer made of an organic material thereon.

C作用〕 セレン系材料をその材料のガラス転移温度未満の温度に
保持された導電性基板上に真空蒸着することにより形成
された適切に均一に粗れた表面粗さの感光層上には、有
機材料からなる強固に付着する塗膜を容易に形成するこ
とができ、密着性の良い表面保護層となる。導電性基体
の温度が低くなりすぎると所要の電子写真特性が得られ
なくなるので導電性基体の温度は50℃以上とすること
が必要である。
C action] On a photosensitive layer having an appropriately uniform surface roughness formed by vacuum-depositing a selenium-based material onto a conductive substrate maintained at a temperature below the glass transition temperature of the material, A strongly adhering coating film made of organic material can be easily formed, resulting in a surface protective layer with good adhesion. If the temperature of the conductive substrate becomes too low, the required electrophotographic properties cannot be obtained, so it is necessary that the temperature of the conductive substrate be 50° C. or higher.

〔実施例〕〔Example〕

第1図は、この発明による製造方法の一実施例により作
製された感光体の模式的断面図で、導電性基体!上にセ
レン系材料からなる単層の感光層2が形成され、その上
に有機材料からなる表面保護層3が形成された構成を示
す。
FIG. 1 is a schematic cross-sectional view of a photoreceptor manufactured by an embodiment of the manufacturing method according to the present invention, and is a conductive substrate! A single-layer photosensitive layer 2 made of a selenium-based material is formed thereon, and a surface protection layer 3 made of an organic material is formed thereon.

実施例1 導電性基体1としてのA1合金円筒に所要の機械加工を
施したのち、その外表面を十点平均粗さRzで0.7μ
mとなる表面粗さに均一にあらす。この導電性基体を洗
浄したのち、真空蒸着装置の回転支持軸に取り付け、加
熱して温度を175℃に保持し、l X 10−’To
rrの真空中で^s、Se、 (ガラス転移温度170
℃)を約55μmの厚さに蒸着して感光層2を形成した
。この感光層2の表面粗さは十点平均粗さRzで0.l
 pm、  最大高さRmaxで0.4μmであった。
Example 1 After performing the required machining on an A1 alloy cylinder as the conductive substrate 1, its outer surface was roughened to a ten-point average roughness Rz of 0.7μ.
The surface roughness is uniformly roughened to m. After cleaning this conductive substrate, it was attached to a rotating support shaft of a vacuum evaporation apparatus, heated and maintained at a temperature of 175°C, and
^s, Se, (glass transition temperature 170
℃) was deposited to a thickness of about 55 μm to form the photosensitive layer 2. The surface roughness of this photosensitive layer 2 is 0.0 in ten-point average roughness Rz. l
pm, and the maximum height Rmax was 0.4 μm.

この感光層上に、アルコキシオルガノシラノールとアク
リルポリオールとを重量配合比7:3で混合した材料を
デイツプ法で塗布して、膜厚約2μmの表面保護層3を
形成して感光体を作製した。
On this photosensitive layer, a material prepared by mixing alkoxyorganosilanol and acrylic polyol at a weight ratio of 7:3 was applied by a dip method to form a surface protective layer 3 having a thickness of approximately 2 μm, thereby producing a photoreceptor. .

実施例2 AsxSe3MM時の導電性基体温度を155℃とした
こと以外は、実施例1と同様にして感光体を作製した。
Example 2 A photoreceptor was produced in the same manner as in Example 1, except that the temperature of the conductive substrate in AsxSe3MM was 155°C.

このときの感光層の表面粗さは、 RzでQ、 3 μ
m 、  Rmaxで0.5μmであった。
The surface roughness of the photosensitive layer at this time is Q in Rz, 3 μ
m and Rmax were 0.5 μm.

実施例3 AszSes蒸着時の導電性基体温度を120℃とした
こと以外は、実施例1と同様にして感光体を作製した。
Example 3 A photoreceptor was produced in the same manner as in Example 1, except that the temperature of the conductive substrate during AszSes vapor deposition was 120°C.

このときの感光層の表面粗さは、Rzで0、8 μm 
、  Rmaxで1. Opmであった。
The surface roughness of the photosensitive layer at this time was 0.8 μm in Rz.
, 1 at Rmax. It was Opm.

実施例4 導電性基体の表面粗さをRzで1.0μmとしたこと以
外は、実施例3と同様にして感光層を作製した。このと
きの感光層の表面粗さは、Rzで1.0pm、  Rm
axで1.2μmであった。
Example 4 A photosensitive layer was produced in the same manner as in Example 3, except that the surface roughness of the conductive substrate was set to 1.0 μm in Rz. The surface roughness of the photosensitive layer at this time is 1.0 pm in Rz and Rm
It was 1.2 μm in ax.

比較例。Comparative example.

^s、Se、蒸着時の導電性基体温度を従来の製造方法
に準じて220℃としたこと以外は実施例1と同様にし
て感光体を作製した。このときの感光層表面は鏡面とな
った。
A photoreceptor was produced in the same manner as in Example 1, except that the temperature of the conductive substrate during vapor deposition was 220° C. according to a conventional manufacturing method. At this time, the surface of the photosensitive layer became a mirror surface.

これらの感光体について、表面保護層の密着性を粘着テ
ープによる剥離試験で評価した。その結果を、導電性基
体の表面粗さ、 As、Se、蒸着時の導電性基体温度
、感光層表面粗さと合わせて第1表に示す。
For these photoreceptors, the adhesion of the surface protective layer was evaluated by a peel test using an adhesive tape. The results are shown in Table 1 together with the surface roughness of the conductive substrate, As, Se, temperature of the conductive substrate during vapor deposition, and surface roughness of the photosensitive layer.

第  1 表 第1表に見られるとおり、従来の製造方法である蒸着時
の導電性基体温度がガラス転移温度よりかなり高い温度
で感光層を蒸着した比較例の感光体の場合、感光層表面
は鏡面となり、その上に設けられた表面保護層の密着性
が弱いことが判る。
Table 1 As shown in Table 1, in the case of the comparative photoreceptor in which the photosensitive layer was deposited using the conventional manufacturing method at a temperature considerably higher than the glass transition temperature of the conductive substrate during vapor deposition, the surface of the photosensitive layer was It becomes a mirror surface, and it can be seen that the adhesion of the surface protective layer provided thereon is weak.

また、蒸着時の導電性基体温度が^52Se、のガラス
転移温度よりも高い実施例1の感光体の場合には、感光
層の表面粗さが小さく、表面保護層の密着性は比較例の
感光体よりも改善はされているが満足できる強度ではな
かった。実施例2.3の感光体の場合には、感光層表面
の凹凸に表面保護層の材料が良好にまわり込み良好な密
着性が得られた。
In addition, in the case of the photoreceptor of Example 1, in which the conductive substrate temperature during vapor deposition is higher than the glass transition temperature of ^52Se, the surface roughness of the photosensitive layer is small, and the adhesion of the surface protective layer is lower than that of the comparative example. Although improved over the photoconductor, the strength was not satisfactory. In the case of the photoreceptor of Example 2.3, the material of the surface protective layer well wrapped around the irregularities on the surface of the photosensitive layer, resulting in good adhesion.

実施例4の感光体の場合には、感光層の表面粗さが若干
大きすぎて凹部への表面保護層材料のまわり込みが不充
分となり、一部密着性の弱い部分が生じた。表面が適度
にあれだ、 好ましくはRzで0.4μm〜0.9μm
の粗さの導電性基体を用い、蒸着時の導電性基体温度を
ガラス転移温度より低温に保って蒸着を行うことにより
、適切で均一にあれだ表面を有する感光層が形成でき、
その上に密着性の良い表面保護層が形成できることが判
る。感光層の表面粗さは、Rzで0.3μm以上0.8
μm以下。
In the case of the photoreceptor of Example 4, the surface roughness of the photosensitive layer was slightly too large, and the surface protective layer material was insufficiently wrapped around the recesses, resulting in some areas with weak adhesion. The surface should be moderately large, preferably 0.4 μm to 0.9 μm in Rz.
By using a conductive substrate with a roughness of 100 mL and performing evaporation while keeping the temperature of the conductive substrate at a temperature lower than the glass transition temperature, a photosensitive layer having an appropriate and uniform rough surface can be formed.
It can be seen that a surface protective layer with good adhesion can be formed thereon. The surface roughness of the photosensitive layer is 0.3 μm or more and 0.8 in Rz.
Less than μm.

Rmaxで1.0μm以下であると好適である。It is preferable that Rmax is 1.0 μm or less.

実施例2.3の感光体について、市販の普通紙複写機に
より画像出しによる耐刷試験を行った結果、10万枚ま
で表面保護層の剥離は発生せず、満足できる密着性が確
認された。
The photoreceptor of Example 2.3 was subjected to a printing durability test by image reproduction using a commercially available plain paper copying machine, and as a result, no peeling of the surface protective layer occurred up to 100,000 copies, and satisfactory adhesion was confirmed. .

また、これらの感光体について電子写真特性の評価を行
った。その結果を表面保護層の膜厚と合わせて第2表に
示す。感度は半減露光量E172(ルックス・秒)で示
し、耐湿性は温度35℃、相対湿度80%の雰囲気中に
100時間放置した時の特性変動で評価した。
Furthermore, the electrophotographic characteristics of these photoreceptors were evaluated. The results are shown in Table 2 together with the thickness of the surface protective layer. Sensitivity was expressed as half-reduced exposure E172 (lux/second), and humidity resistance was evaluated by changes in characteristics when left in an atmosphere at a temperature of 35° C. and relative humidity of 80% for 100 hours.

/ 7/ / / / / 第  2  表 第2表に見られるとおり、厚さ約2μmの表面保護層を
設けた場合には電子写真特性は実施例。
/ 7/ / / / / Table 2 As shown in Table 2, when a surface protective layer with a thickness of about 2 μm was provided, the electrophotographic characteristics were as in Example.

比較例の各感光体の間に差はなく良好であった。There was no difference between the photoreceptors of Comparative Examples, and the results were good.

以上の例では、感光層の構成材料としてAS2Se。In the above example, AS2Se is used as the constituent material of the photosensitive layer.

を用いたが、これに限られるものではなく、他のセレン
系材料を用いた場合でも、その材料に応じて導電性基体
温度を50℃以上ガラス転移温度未満に保持して蒸着を
行うことにより、同等の効果が得られる。また、感光層
の層構成も単層に限られるものではなく、機能分離型の
多層構造の場合にも同様に有効である。さらにまた、表
面保護層の構成材料も実施例に限定されるものではない
However, it is not limited to this, and even if other selenium-based materials are used, the temperature of the conductive substrate can be maintained at 50°C or higher and lower than the glass transition temperature depending on the material. , the same effect can be obtained. Further, the layer structure of the photosensitive layer is not limited to a single layer, and a functionally separated multilayer structure is equally effective. Furthermore, the constituent material of the surface protective layer is not limited to the examples.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、50℃以上ガラス転移温度未満の温
度に保たれた導電性基体上にセレン系材料を真空蒸着し
て、表面粗さがRzで063μm以上0、8 am以下
、  Rmaxで1,0μm以下である感光層を形成し
、その上に有機材料からなる表面保護層を形成して感光
体を作製する。
According to this invention, a selenium-based material is vacuum-deposited on a conductive substrate kept at a temperature of 50° C. or higher and lower than the glass transition temperature, and the surface roughness is 0.63 μm or higher in Rz and 0.8 am or lower, and 1 in Rmax. , 0 μm or less, and a surface protective layer made of an organic material is formed thereon to produce a photoreceptor.

このような製造方法とすることにより、セレン感光層上
に有機材料を電子写真特性を損なうことなく容易に強固
に付着させ、密着性の優れた表面保護層を形成すること
ができ、耐久性に優れ、長期間にわたって良質な画像が
得られる電子写真用感光体を得ることができる。
By using this manufacturing method, the organic material can be easily and firmly adhered to the selenium photosensitive layer without impairing the electrophotographic properties, and a surface protective layer with excellent adhesion can be formed, resulting in improved durability. It is possible to obtain an electrophotographic photoreceptor that is excellent and can provide high-quality images over a long period of time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明による製造方法の一実施例により作製
された感光体の模式的断面図である。 1 導電性基体、2 感光層、3 表面保護層。 第 図
FIG. 1 is a schematic cross-sectional view of a photoreceptor manufactured by an embodiment of the manufacturing method according to the present invention. 1 conductive substrate, 2 photosensitive layer, 3 surface protective layer. Diagram

Claims (1)

【特許請求の範囲】[Claims] 1)導電性基体上にセレン系材料からなる感光層とその
上に設けられた有機材料からなる表面保護層を備えてな
る電子写真用感光体の製造方法において、導電性基体の
温度を50℃以上前記セレン系材料のガラス転移温度未
満の範囲内の温度に保持し、この導電性基体上に前記セ
レン系材料を真空蒸着することにより表面粗さが十点平
均粗さRzで0.3μm以上0.8μm以下の範囲内で
ありかつ最大高さRmaxで1.0μm以下である感光
層を形成し、その上に有機材料からなる表面保護層を形
成することを特徴とする電子写真用感光体の製造方法。
1) In a method for manufacturing an electrophotographic photoreceptor comprising a photosensitive layer made of a selenium-based material on a conductive substrate and a surface protection layer made of an organic material provided thereon, the temperature of the conductive substrate is set to 50°C. By maintaining the temperature within a range below the glass transition temperature of the selenium-based material and vacuum-depositing the selenium-based material on the conductive substrate, the surface roughness is 0.3 μm or more in ten-point average roughness Rz. An electrophotographic photoreceptor comprising a photosensitive layer having a maximum height Rmax of 0.8 μm or less and a maximum height Rmax of 1.0 μm or less, and a surface protective layer made of an organic material formed thereon. manufacturing method.
JP29421389A 1989-11-13 1989-11-13 Production of electrophotographic sensitive body Pending JPH03154066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29421389A JPH03154066A (en) 1989-11-13 1989-11-13 Production of electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29421389A JPH03154066A (en) 1989-11-13 1989-11-13 Production of electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPH03154066A true JPH03154066A (en) 1991-07-02

Family

ID=17804796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29421389A Pending JPH03154066A (en) 1989-11-13 1989-11-13 Production of electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPH03154066A (en)

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