JPH0315198A - High frequency power induction device for generating reactive plasma - Google Patents
High frequency power induction device for generating reactive plasmaInfo
- Publication number
- JPH0315198A JPH0315198A JP1149222A JP14922289A JPH0315198A JP H0315198 A JPH0315198 A JP H0315198A JP 1149222 A JP1149222 A JP 1149222A JP 14922289 A JP14922289 A JP 14922289A JP H0315198 A JPH0315198 A JP H0315198A
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- air tight
- high frequency
- tight window
- airtight window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 claims description 12
- 238000011109 contamination Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
【産業上の利用分野】
本発明は、例えば半導体工業や表面処理工業界などで広
範に使用されている反応性プラズマ装置におけるプラズ
マ生成用の高周波電力導入装置に関する.
〔従来の技術〕
従来この種の高周波電力導入装置においては、導入線路
として同軸管や導波管が用いられ、その線路(管路)内
には誘電体よりなる気密用窓が設けられている.
〔発明が解決しようとする課題〕
ところが上記の気密用窓の出力側、例えば同軸管にあっ
ては電力放射アンテナまた導波管にあっては出力開孔と
の間に何ら遮蔽物がなく、プラズマ雰囲気中に露出して
いるために、プラズマの反応性粒子が常に高速で気密用
窓に衝突し、その窓の表面に反応性物質が徐々に堆積し
て高周波電力の伝送能率を低下させ、遂には気密用窓表
面で高周波電力を短絡させるおそれがある.そのため、
数回の使用の度に頻繁に気密用窓部を分解し、表面の堆
積物質を除去清掃する必要があり、その都度プラズマ容
器内を大気に曝すために、作業能率を著しく悪化させて
いる.
本発明は、上記の気密用窓への反応性物質の蒸着による
汚染を極力減少させることにより上記の清掃回数を少な
くして作業能率を向上させることを目的とする.
〔課題を解決するための手段〕
上記の目的を達戒するために本発明は以下の構戒とした
ものである.
即ち、高周波電力導入線路の気密用窓から出力先端まで
の間の上記導入線路内の対向壁面、例えば同軸管線路に
あっては外導体内面と内導体外面、また導波管線路にあ
っては互いに対向する内壁面に、導体または誘電体より
なる気密用窓汚染防止用の遮蔽板を交互に複数個設けた
ことを特徴とする。
〔作 用〕
上記のように高周波電力導入線路の気密用窓から出力先
端までの間の上記導入線路内の対向壁面に、気密用窓汚
染防止用の遮蔽板を交互に複数個設けたことにより、上
記導入線路出力先端側のプラズマ生成領域から気密用窓
に向かって直進する反応性粒子の進路が上記遮蔽板で遮
られて反応性粒子による気密用窓の汚染を可及的に低減
させることが可能となる.
〔実施例〕
第1図は、同軸管回路を使用する反応性プラズマ生成用
高周波電力導入部に、本発明を実施した一例である。図
において、1はプラズマ炉の容器?、2は誘電体よりな
る気密用窓、3は出力孔、4は同軸管内導体、5は電力
放射用アンテナであり、高周波出力電力は気密用窓2を
とおしてプラズマ炉内に導かれる。
そして、その気密用窓2と出力端3側との間に、外導体
61の内側から円環状遮蔽板7.を、また同軸管内導体
4の外側から円板状遮蔽板7■を夫々多数交互に植え込
んだものである。その隣り合う遮蔽板7.・7■は第2
図に示すように管軸方向から見た状態において互いに重
なり合うようにして、出力孔3からは気密窓2が見えな
いようにしている.従って直進する反応性粒子は、わず
かな隙間から通過しても、次の遮蔽板に遮られるので、
大部分が気密用窓には到達しない。
なお上記の遮蔽仮7,・7■は金属導体でも誘電体でも
よい。またそれらの厚さが、使用周波数に対して薄けれ
ば、高周波伝送特性にほとんど影響を与えない。通常使
用される工業用の、13.56MHzの周波数では0.
5開の金属板が、支障なく使用できた。
?しマイクロ波などの高い周波数で使用する場合などで
は、遮蔽板の厚さによって、伝送特性に影響が現れるこ
とがある。この様な場合には、遮蔽板の間隔や寸法を変
えて、濾波器特性を持たせればよい。
尚気密用窓2は、鍔8,と8■で取り付けられ、内外導
体に設けた周方向溝内のパッキング9によって気密が保
たれている。
マイクロ波帯で使用する場合には、導波管回路による場
合が多い。第3図・第4図はその場合の実施例を示すゆ
プラズマ炉壁1に取り付けられた導波管6t内の対向す
る両面から、交互に平板遮蔽板7I ・7■を多数植え
込んだものである.その各遮蔽板7I ・7tは第4図
に示すように対向する面近くまで伸びていて、その僅か
な隙間から漏れた反応性粒子も次の遮蔽板で遮られ、気
密用窓まで達するのは、極僅かなものにすぎなくなる.
したがって、気密用窓が受ける汚染は、非常に少なくな
り、作業効率も格段に向上する。
なお遮蔽板の厚さが悪影響を与えるおそれがあ?場合に
は、例えば一方の遮蔽板郡7lの間隔と、それらの間に
置かれる他方の遮蔽板7■の厚さなどを調整して、濾波
器特性を示すようにする。
〔発明の効果〕
以上説明したように本発明は高周波電力導入線路に設け
た気密用窓と出力先端との間の上記導入線路内の対向壁
面に遮蔽板を交互に複数個設けることによって、上記気
密用窓に向かって直進する反応性粒子の進路を遮るよう
にしたから、反応性粒子による気密用窓の汚染を極力少
なくすることが可能となり、気密用窓の清掃回数を大幅
に低減するこができる.
実際、例えば半導体製造工業の分野では、24時間の連
続作業の場合が多く、反応性プラズマ炉の作業効率を向
上させることは極めて重要であり、前記の清掃回数を極
力少なくすることが望まれていたが、本発明によれば清
掃回数が従来の数十分の一に減少し、作業能率および生
産性を大幅に改善することができた。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high-frequency power introduction device for plasma generation in a reactive plasma device widely used, for example, in the semiconductor industry and the surface treatment industry. [Prior Art] Conventionally, in this type of high-frequency power introduction device, a coaxial pipe or a waveguide is used as the introduction line, and an airtight window made of a dielectric material is provided in the line (pipe). .. [Problems to be Solved by the Invention] However, there is no shielding between the output side of the above-mentioned airtight window, for example, the power radiation antenna in the case of a coaxial pipe, or the output aperture in the case of a waveguide. Due to exposure to the plasma atmosphere, reactive particles of the plasma constantly collide with the airtight window at high speed, and reactive substances gradually accumulate on the surface of the window, reducing the transmission efficiency of high-frequency power. There is a risk that the high-frequency power may eventually be short-circuited on the airtight window surface. Therefore,
It is necessary to frequently disassemble the airtight window and clean the deposited material on the surface after each use, exposing the inside of the plasma container to the atmosphere each time, which significantly reduces work efficiency. An object of the present invention is to reduce the number of times of cleaning and improve work efficiency by minimizing contamination caused by vapor deposition of reactive substances on the airtight windows. [Means for Solving the Problems] In order to achieve the above objectives, the present invention has the following precepts. That is, the opposing wall surfaces in the introduction line between the airtight window and the output tip of the high frequency power introduction line, for example, the inner surface of the outer conductor and the outer surface of the inner conductor in the case of a coaxial tube line, and the outer surface of the inner conductor in the case of a waveguide line. It is characterized in that a plurality of shielding plates made of a conductor or dielectric for preventing contamination of the airtight window are alternately provided on the inner wall surfaces facing each other. [Function] As mentioned above, a plurality of shielding plates for preventing contamination of the airtight window are alternately installed on the opposing walls of the introduction line between the airtight window of the high frequency power introduction line and the output tip. The path of reactive particles traveling straight from the plasma generation region on the output end side of the introduction line toward the airtight window is blocked by the shielding plate, thereby reducing contamination of the airtight window by the reactive particles as much as possible. becomes possible. [Example] FIG. 1 is an example in which the present invention is implemented in a high-frequency power introduction section for reactive plasma generation using a coaxial tube circuit. In the diagram, 1 is the plasma reactor container? , 2 is an airtight window made of a dielectric material, 3 is an output hole, 4 is a coaxial tube conductor, and 5 is a power radiation antenna. High frequency output power is guided into the plasma reactor through the airtight window 2. An annular shielding plate 7 is inserted from the inside of the outer conductor 61 between the airtight window 2 and the output end 3 side. In addition, a large number of disc-shaped shielding plates 7■ are alternately implanted from the outside of the coaxial pipe inner conductor 4. The adjacent shielding plate 7.・7■ is the second
As shown in the figure, they overlap each other when viewed from the tube axis direction, so that the airtight window 2 is not visible from the output hole 3. Therefore, even if reactive particles traveling in a straight line pass through a small gap, they will be blocked by the next shielding plate.
Most of it does not reach the airtight windows. Note that the above-mentioned temporary shields 7 and 7 may be made of a metal conductor or a dielectric material. Furthermore, if their thickness is thin relative to the frequency used, they will have little effect on high frequency transmission characteristics. At the commonly used industrial frequency of 13.56MHz, the frequency is 0.
A 5-open metal plate could be used without any problems. ? However, when used at high frequencies such as microwaves, the thickness of the shielding plate may affect the transmission characteristics. In such a case, the spacing and dimensions of the shielding plates may be changed to provide filter characteristics. The airtight window 2 is attached with flanges 8 and 8, and is kept airtight by a packing 9 in a circumferential groove provided in the inner and outer conductors. When used in the microwave band, a waveguide circuit is often used. Figures 3 and 4 show an example of such a case, in which a large number of flat shielding plates 7I and 7■ are alternately implanted from opposite surfaces of a waveguide 6t attached to the plasma reactor wall 1. be. As shown in Fig. 4, each of the shielding plates 7I and 7t extends close to the opposing surfaces, and any reactive particles that leak through the small gaps are blocked by the next shielding plate and do not reach the airtight window. , it becomes only a very small amount.
Therefore, contamination of the airtight window is greatly reduced, and work efficiency is greatly improved. Is there a possibility that the thickness of the shielding plate may have an adverse effect? In this case, for example, the spacing between one group of shielding plates 7l and the thickness of the other shielding plate 7■ placed between them are adjusted so as to exhibit filter characteristics. [Effects of the Invention] As explained above, the present invention achieves the above-mentioned effect by alternately providing a plurality of shielding plates on the opposing wall surface in the introduction line between the airtight window provided in the high frequency power introduction line and the output tip. Since the path of reactive particles traveling straight toward the airtight window is blocked, it is possible to minimize the contamination of the airtight window by reactive particles, and the number of cleaning times for the airtight window can be significantly reduced. Can be done. In fact, for example, in the semiconductor manufacturing industry, where work is often continuous for 24 hours, it is extremely important to improve the work efficiency of reactive plasma furnaces, and it is desirable to minimize the number of cleanings mentioned above. However, according to the present invention, the number of times of cleaning was reduced to several tenths of that of the conventional method, and work efficiency and productivity were significantly improved.
?l図は同軸管回路を用いたプラズマ装置の電力導入部
に本発明を適用した実施例の縦断面図、第2図はその側
面図、第3図は導波管回路を用いた電力導入部に本発明
を適用した実施例の縦断面図、第4図はその側面図であ
る.
1はプラズマ炉の容器壁、2は気密用窓、3は出力孔、
4は同軸管内導体、5は電力放射用アンテナ、6,は同
軸管外導体、6■は導波管、7,・72は遮蔽板、8,
・8.は取り付け用鍔、9は気密バッキング。? Figure 1 is a longitudinal sectional view of an embodiment in which the present invention is applied to a power introduction part of a plasma device using a coaxial tube circuit, Figure 2 is a side view thereof, and Figure 3 is a power introduction part using a waveguide circuit. Fig. 4 is a longitudinal cross-sectional view of an embodiment to which the present invention is applied. 1 is the vessel wall of the plasma reactor, 2 is the airtight window, 3 is the output hole,
4 is a coaxial pipe inner conductor, 5 is a power radiation antenna, 6 is a coaxial pipe outer conductor, 6■ is a waveguide, 7, 72 is a shielding plate, 8,
・8. 9 is the mounting tsuba, and 9 is the airtight backing.
Claims (1)
の間の上記導入線路内の対向壁面に、導体または誘電体
よりなる上記気密用窓汚染防止用の遮蔽板を交互に複数
個設けたことを特徴とする反応性プラズマ生成用高周波
電力導入装置。(1) A plurality of shielding plates made of a conductor or dielectric to prevent contamination of the airtight window are alternately provided on the opposing walls in the introduction line between the airtight window of the high frequency power introduction line and the output tip. A high-frequency power introduction device for reactive plasma generation characterized by the following.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1149222A JPH0665197B2 (en) | 1989-06-12 | 1989-06-12 | High frequency power introduction device for reactive plasma generation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1149222A JPH0665197B2 (en) | 1989-06-12 | 1989-06-12 | High frequency power introduction device for reactive plasma generation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0315198A true JPH0315198A (en) | 1991-01-23 |
JPH0665197B2 JPH0665197B2 (en) | 1994-08-22 |
Family
ID=15470529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1149222A Expired - Lifetime JPH0665197B2 (en) | 1989-06-12 | 1989-06-12 | High frequency power introduction device for reactive plasma generation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0665197B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999065056A1 (en) * | 1998-06-11 | 1999-12-16 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
-
1989
- 1989-06-12 JP JP1149222A patent/JPH0665197B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999065056A1 (en) * | 1998-06-11 | 1999-12-16 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6712927B1 (en) | 1998-06-11 | 2004-03-30 | Applied Materials Inc. | Chamber having process monitoring window |
US6835275B1 (en) | 1998-06-11 | 2004-12-28 | Michael N. Grimbergen | Reducing deposition of process residues on a surface in a chamber |
US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
Also Published As
Publication number | Publication date |
---|---|
JPH0665197B2 (en) | 1994-08-22 |
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