JPH03145122A - Temperature controller for heat treatment of semiconductor - Google Patents

Abstract

PURPOSE:To realize a soaking length corresponding to the lot size of processed wafer by a method wherein specified heating zone is controlled on the correction target temperature measured by autoprofile drawing means to equalize the temperatures in processor part regions corresponding to a heating zone. CONSTITUTION:A zone number set up means 36 is to be specified from 1 to 4 corresponding to the lot size of the wafers to be processed. Next to this specification, autoprofiles are drawn. Then, the temperatures in respective zones in a processor part 6 are controlled to be accurately equalized with the target temperatures in the zones. When the temperatures in respectively specified zones in the processor part 6 are stabilized, a specified profile corrector measures the difference between the ZONE (1) target temperatures 32, etc., and the ZONE (1) temperature detected value 14, etc., to record the difference as profile data. Finally, the ZONE (1) target temperatures 32, etc., are inputted in respective corresponding profile correctors so that the profile data corresponding to the target temperature may be added to heat-control respective corresponding heaters.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a temperature control device for a semiconductor heat treatment apparatus, such as a semiconductor/diffusion furnace.

(Prior Art) In semiconductor heat treatment equipment such as semiconductor diffusion furnaces, the temperature within the processing section is kept uniform (for example, within ±0.5°C) for the purpose of increasing productivity of semiconductor devices and uniformity of processing. There is a need for an apparatus with a long length, that is, a long soaking length.

The conventional temperature control device for semiconductor heat treatment equipment is
Taking the one for semiconductor diffusion device as an example, FIGS. 9 and 10
This will be explained using figures. First, the structure of the furnace body of a semiconductor diffusion device (hereinafter also referred to as a semiconductor diffusion furnace) will be explained.
In the figure, 1 is a heat insulating material, and inside it are ZONE [1] heater 2 and ZONE [2] as heating means.
i=-3.2ONE [3] Heater 4 and ZO
NE [4] The heater 5 and each heater divided into, for example, four zones are wound. A quartz tube (reaction tube) serving as a processing section 6 is arranged inside these heaters, and its lower opening is closed with a quartz cap 7. A quartz support stand 8 is placed on top of the quartz cap 7, and a boat 9 for loading wafers to be processed is placed on top of the stand 8.

22 is a temperature control device for heating and setting the temperature inside the furnace to a required temperature. Temperature detectors 10, 11.12.13 are attached to the heaters 2.3.4.5 of each zone, and the respective temperature detection values 14.15.1
A signal line 6.17 is connected to the temperature control device 22. On the other hand, the temperature control device 22 controls the heater 2 of each zone.
．． 3.4.5, heater output 18.19.20.2
1 output line is connected. Further, in order to measure the temperature inside the processing section 6, a hole is made in the quartz cap 7, and a paddle thermocouple 23 is inserted into the hole. Inside the paddle thermocouple 23, paddle temperature detectors 24, 25, 26, 27 are installed as temperature measuring means corresponding to the height positions of each zone heater 2, 3, 4, 5, respectively,
The respective paddle temperature detection values 28, 29, 30, 31 are input to the temperature control device 22. The temperature control device 22 also includes target temperatures 32, 33, 34, 3 for each zone.
5 signals are input.

Next, the functions of the temperature control device 22 will be explained using FIG. 10.

Since the temperature control device 22 controls each zone independently, only one zone will be explained.

First, when executing an auto profile, the profile control switch 53 is turned off, and the cascade control switch 54 is turned on. Paddle temperature detection value 28 (29,3
0, 31) is paddle corrector 37 (38, 3, 40)
It is manually corrected to show accurate temperature. The corrected paddle temperature detection value is ZONE [1] Target temperature 32
(ZONE [2] target temperature 33, ZONE [3] target temperature 34, ZONE [4] target temperature 35), and ZONE [11 force scale PID adjuster 45 (ZONE
ONE [2] Power, 2. Kate PID controller 46.2
ONE [31 Force scale PID adjuster 47, ZONE
[4] Input to force scale PID regulator 48). And ZONE [1] Force scale PID adjuster 45
(ZONE [2] Cas/r-do P I Dig adjuster 4G, ZONE [31 Force scale PID adjuster 47,
The output of the ZONE [4] force scale PID regulator 48) passes through the cascade control switch 54 to the ZONE
l PID regulator 49 (ZONE [2] PID regulator 50, ZONE [3] PID regulator 51, ZO
NE [4] becomes the target temperature of the PID controller 52).

This target temperature is ZONE [1] Temperature detection value 14 (Z
ONE l:2] Temperature detection value 15, ZONE [3]
Temperature detection value 16 is compared with ZONE [4] temperature detection value 17), and ZONE [11 PID controller 49 (ZO
NE [2] PID controller 50, ZONE [3]
PID regulator 51, ZONE [4] PID regulator 52)
becomes the human power of Then, ZONE [1] heater output 18 (ZONE [2]
Heater output 19, ZONE [3] 1: Overnight output 20. ZONE [4] Heater output 21)
ZONE [1] Heater 2 (ZONE [2
Co Heater 3, ZONE [3 Co Heater 4, ZON
E [4 heater 5) is heated and controlled to a predetermined target temperature.

By the cascade control as described above, the temperature of each zone in the processing section 6 is controlled so as to accurately match the target temperature. The profile corrector 41 (42, 43, 44) is set to ZON when the temperature of each zone in the processing unit 6 is stabilized.
E [1 target temperature 32 (ZONE C2 target temperature 33, ZONE [3] target temperature 34, ZONE [4]
Target m degrees 35) and ZONE [1 temperature detection value 14 (
ZONE [2] Temperature detection value 15, ZONE [3] i'R
The difference between temperature detection value 16 and ZONE [4th temperature detection value 17) is measured and recorded as profile data.

That is, (profile data) - (ZONE temperature detection value) (ZONE target temperature). When the profile data of each zone is recorded, the execution of the auto profile ends.

Next, when performing profile control, the profile control switch 53 is turned on and the cascade control switch 54 is turned off. ZONE [1] Target temperature 32 (
ZONE [2 target temperatures 33, ZONE [3] target temperatures 34, ZONE [4] target temperatures 35) are input to the profile corrector 41 (42, 43, 44), and profile data corresponding to the target temperatures are added. be done. That is, (corrected target temperature) - (ZONE target temperature> + (profile data). The corrected target temperature passes through the profile control switch 53 to the ZONE [1] PID controller 49
(ZONE [2] PID controller 50, ZONE [
3] PID controller 51, ZONE [4] PID controller 52) target temperature. This target temperature is ZON
E [1] Temperature detection value 14 (ZONE [2] Temperature detection value 15, ZONE [3] Temperature 11ffiel value 16
, ZONE [4] Temperature detection value 17)
NE [11 PID controller 49 (ZONE [:2]
PID controller 50, ZONE [3] PID controller 51, ZONE [4] PIDliffi device 52). Then, Z which is the output of this PID controller
ONE [1] Heater output 18 (ZONE [2]
Heater output 19, ZONE [3] Heater output 20
, ZONE [4] Heater output 21) (: from, ZO
NE [111=-Evening 2 (ZONE [2]
1=-93, ZONE [3] 1=-94, ZONE
E [4] Heat the heater 5).

By the profile control as described above, the processing unit 6
The temperature inside is controlled to match the target temperature. Moreover, by such a series of operations, a predetermined soaking length is maintained within the processing section 6.

(Problems to be Solved by the Invention) As described above, in the conventional temperature control device for semiconductor heat treatment equipment, a series of target temperatures are given to all the zone heaters that constitute the heating means, and The maximum soaking length can always be obtained. Therefore, such a semiconductor heat treatment apparatus is extremely efficient when heat treatment is always performed on the maximum number of wafers that can be processed.

However, in reality, the process is often repeated using fewer wafers than the maximum number. In this case, as a result, the long soaking length is wasted, and power is wasted. In general, a large number of semiconductor heat treatment apparatuses are used in a semiconductor device manufacturing factory, and when looking at the factory as a whole, such waste of power cannot be ignored.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a temperature control device for semiconductor heat processing equipment that can change the length of the soaking length in the processing section depending on the number of wafers to be processed, thereby reducing waste of power. With the goal.

[Structure of the Invention] (Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a processing method in a semiconductor heat processing apparatus equipped with heating means divided into a plurality of heating zones for heating a processing section. a temperature control device for controlling the temperature of one of the plurality of heating zones;
Alternatively, a zone number designation means for designating a required number of consecutive heating zones, and a target temperature of the processing section region corresponding to the heating zone designated by the zone number designation means are given, and the temperature of the processing section region is made uniform. an auto-profile execution means for determining a corrected target temperature of the specified heating zone in order to achieve the specified temperature; and a profile control execution means for controlling the specified heating zone based on the corrected target temperature obtained by the auto-profile execution means. The gist is to have the following.

(Function) Among the plurality of heating zones in the heating means, one or a required number of consecutive heating zones are designated depending on the number of wafers to be processed and the like. With auto profile execution method,
The target temperature of the processing section region corresponding to the designated heating zone is given, and the corrected target temperature of the designated heating zone for making the temperature of the processing section region uniform is determined from the parameters of the auto profile.

The specified heating zone is controlled by the profile control execution means based on the corrected target temperature, and a soaking length maintained at the target temperature is obtained only in the processing section area corresponding to the specified heating zone. It will be done. The control output becomes zero for heating zones that are not designated, thereby eliminating wasted power.

(Example) Hereinafter, an example of the present invention will be described based on FIGS. 1 to 8. This embodiment is applied to a temperature control device for a semiconductor diffusion device.

In FIGS. 1 to 5, the same or equivalent components as those in FIGS. 9 and 10 are designated by the same reference numerals, and redundant explanation will be omitted.

First, the configuration of the temperature control device for semiconductor heat treatment equipment of this embodiment will be explained. As shown in FIG. 1, a signal line for setting the number of zones 36 is connected to the temperature control device 22.

Next, the configuration of the temperature control device 22 will be explained using FIGS. 2 to 5.

ZONE as heating means [:1] Heater 2 to ZO
NE [4] Temperature control of each ZONH, which is a processing section area corresponding to the heater 5, is performed independently.
[1 piece ZONE l:2] ZONE
[3] ZONE [4] control is shown in FIGS. 2, 3, 4, and 5, respectively.

First, the control of the processing section area corresponding to ZONE [11 heater 2, that is, ZONE [1], which is the first heating zone, will be explained using FIG.

ZONE [1] The target temperature 32 is input to the profile corrector A58, profile corrector B57, profile corrector C56, and profile corrector D55, respectively, and is also input to the setting value of the ZONE (:1) force scale PID controller 45. The above profile corrector D55
The output of ZONE [1] PID is sent to ZONE [1] via the profile control switch 65 for D zone control of ZONE [1].
, 111 is the setting value of section 4c. The output of the profile corrector C56 is output to ZONE [1] via the profile control switch 66 for C zone control in ZONE [11].
This becomes the set value of the PID controller 49. The output of the profile corrector B57 is output to ZONE [1] via the profile control switch 67 for B zone control in ZONE [11].
This becomes the set value of the PID controller 49. The output of the profile corrector A58 is transmitted to the ZONE [ZONE [11] via the profile control switch 68 for controlling the A zone.
This is the setting value of the 11PID controller 49.

In addition, ZONE [1] Pamo ZONE [11 is manually corrected by the paddle corrector 37 so as to indicate an accurate temperature. The corrected temperature detection value is
ZONE [11 Compare with target temperature 32zONE [1
] It becomes the input of the force scale PID regulator 45. This ZO
NE [The output of the 11 force scale PID 11 node 45 is
ZONE [1] 7'FX'y-de control switch 69
ZONE [1] becomes the set value of the PID controller 49 via . ZONE (1) The temperature detection value 14 is input to the profile corrector A58, profile corrector B57, profile corrector C56, and profile corrector D55, respectively, and is also input to the ZONE [1] PID controller 4.
The measured value is 9. Then, ZONE [1] which is the output of this PID regulator 49 is 2O by the heater output 18.
NE [11 Heater 2 is designed to be heated.

Next, the control of the second heating zone, ZONE [2], the processing area corresponding to the heater 3, ie, ZONE [2], will be explained using FIG.

ZONE [2] Target temperature 33 is set by profile corrector A61. Profile corrector B60. are respectively input to the profile corrector C59, and are also input to the ZONE [2]
This is the setting value of the force scale PID regulator 46. The output of the above profile corrector C59 is ZONE [2] C
ZONE [2] becomes the setting value of the PID controller 50 via the profile control switch 70 for zone control. The output of profile corrector B60 is ZONE [2] 8
ZONE [2] becomes the set value of the PID controller 50 via the profile control switch 71 for zone control.

The output of the profile corrector A61 becomes the rZONE [2] P I Dmmt15Cl) setting value via the profile control switch 72 for controlling the A zone of ZONE [2].

The ZONE [2] paddle temperature is also input to the ZONE [2] paddle corrector 38 and corrected to indicate an accurate temperature. The corrected temperature detection value is
ZONE [2] Compared with target temperature 33, ZONE [2
] Serves as an input to the force scale PID regulator 46. The output of this cascade PID regulator 46 is sent to ZONE [2] via the ZONE [2] cascade control switch 73.
This becomes the setting value of the PID controller 50. The ZONE [2] temperature detection value 15 is input to the profile corrector A61, profile corrector B60, and profile corrector C59, respectively, and also serves as the ZONE [21PID IIID adjuster 52. Then, the ZONE [2] heater output 19, which is the output of the I'ID regulator 50,
E [2] The heater 3 is heated under control.

Next, the control of the processing section area corresponding to the third heating zone ZONE [3] heater 4, that is, ZONE [3] will be explained using FIG.

ZONE [3] The target temperature 34 is input to the profile corrector A63 and the profile corrector B62, respectively, and is also input to the ZONE! :3] Cascade PID controller 4
The setting value is 7. The output of the above profile corrector B62 is sent to ZONE [3] PID via the profile control switch 74 for B zone control of ZONE [3].
This becomes the setting value of the regulator 51. Profile corrector A63
The output of is Z.

'tl''ZONE [3] P IDI via profile control switch 75 for A zone control of NE [3]
This becomes the setting value of the I-section device 51.

The temperature is also input to three ZONE [3] paddle correctors and corrected to indicate an accurate temperature. The corrected temperature detection value is Z
ONE [3] Compared with target temperature 34 zONE [3]
It becomes an input to the force scale PID regulator 47. This ZON
E [3] The output of the force scale PID regulator 47 is ZO
NE [3] ZO via cascade control switch 76
NE [3] P This is the set value of the ID controller 51. Z
The ONE [3] temperature detection value 16 is input to the profile corrector A 63 and the profile corrector B 62, respectively, and also becomes a measurement value of the ZONE [3] PID controller 51.

Then, zONE which is the output of this PID regulator 51
[3] The ZONE f:3] heater 4 is controlled to be heated by the t-total output 20.

Next, control of the processing section area corresponding to the fourth heating zone ZONE [4] heater 5, that is, ZONE [4] will be explained using FIG.

ZONE [4] Target temperature 35 is input to the profile corrector 64, and ZONE [4] Force scale P
This becomes the setting value of the ID adjuster 48. The output of the profile corrector A64 is sent to ZONE[4] via the profile control switch 77 for A zone control of ZONE[4].
] PID:I! This becomes the setting value of the 4-section unit 52.

Further, the ZONE [4] Pamo ZONE [:4] is inputted to the paddle corrector 40 and corrected to indicate an accurate temperature. The corrected temperature detection value is compared with ZONE [4] target temperature 35, and ZONE [4]
4] Input to force scale PID regulator 48. This Z
ONE [4] The output of the force scale PID regulator 48 is Z
ONE l:4] becomes the set value of the ZONE [4] P ID regulator 52 via the cascade control switch 78. ZONE [4] Temperature detection value 17 is input to profile corrector A64, and ZONE [4] PID
This is the measured value of the regulator 52. The ZONE [4] heater 5 is heated by the ZONE [4] coheater output 21 which is the output of the PID regulator 52 .

Each of the profile control switches and cascade control switches 65 to 78 for A-D zone control in FIGS. 2 to 5 described above is switched to a predetermined mode according to the signal of the zone number setting 36, This zone number setting is 36
The signal manual means and the control switches 65 to 78 described above constitute a zone number designating means.

In addition, each ZONH
These profile correctors 55 to 64 and cascade PID adjusters 45 to 48 constitute an auto profile execution means.

Each of the ZONEPIDW4 moderators 49 to 52 adjusts the ZONE heater (
heating zone), and each ZONEP
The ID adjusters 49 to 52 constitute a profile control execution means.

Next, the operation of the temperature control device for a semiconductor heat treatment apparatus constructed as described above will be explained with reference to FIGS. 6 to 8.

First, the zone number setting 36 in FIG. 1 is specified between 1 and 4 depending on the number of lots of Ueno 1 to be processed. Following this specification, auto-profile is executed. At this time, each profile control switch and cascade control switch 65 to 78 for A-D zone control in FIGS. 2 to 5 are switched as shown in the table in FIG. 6 according to the designation of the number of zones. Ru.

By specifying the number of zones, each ZONH is independently controlled in cascade control so that the temperature of each ZONE in the processing section 6 accurately matches the target temperature of that ZONE. In the table of Figure 6, in the case of zONE where all switches are turned off according to the designation of the number of zones, the PID controller (
The setting values of the four ZONE heaters (corresponding to 50, 51, and 52) become zero, and the control output for the corresponding ZONE heater is fixed to zero.

When the temperature of each designated ZONE in the processing unit 6 is stabilized, the designated profile corrector is set to ZONE [11 target temperature 32, ZONE [
2] Target temperature 33, ZONE [3 target temperature 34, ZO
NE [4] Target temperature 35 and ZONE [1] Temperature detection value 14, ZONE [2] Temperature detection value 15, ZONE [
3] Temperature detection value 16, ZONE [4] Temperature detection value 1
7 is measured and recorded as profile data. That is, (profile data) - (ZONE temperature detection value) (ZONE target temperature) Generally, profile data can have 6 x 2 - 12 points of profile data, 2 points for the same target temperature and 6 points for different target temperatures. It is normal for it to be . When the profile data of each ZONH is recorded, the execution of the auto profile ends.

Next, the process moves to execution of profile control. At this time, the switches 65 to 78 in FIGS. 2 to 5 are switched as shown in the table of FIG. 8 in accordance with the designation of the number of zones.

The control of each ZONE becomes independent profile control by the switching settings of each of the switches described above. ZONE [1] Target temperature 32, ZONE [2] Target temperature 33, ZONE
[3] Target temperature 34 and ZONE [4] Target temperature 35 are each input to the corresponding profile corrector, and profile data corresponding to the target temperature is added. That is, (corrected target temperature) - (ZONE target temperature) + (
Profile data) The corrected target temperatures are transferred to ZONE [1] PID controller 49, ZONE [21 PID controller 50, ZONE] through the respective corresponding profile control switches.
[3] PID regulator 51, ZONE [4] Target temperature of FED regulator 52. Then, this corrected target temperature is ZONE [1] temperature detection value 14, ZONE [2]
] Temperature detection value 15, ZONE [3 temperature detection value 16, Z
ONE [4] Compared with temperature detection value 17, ZONE
[11 PID regulator 49, ZONE [21 PID regulator 50, ZONE [1] PID regulator 51, ZONE
E [4] P Input to ID controller 52.

Then, ZONE which is the output of these PIDm moderators
[11 Heater output 18, ZONE [2] Heater output 19, ZONE [3] Heater output 20, ZONE
[4] Depending on the heater output 21, each ZONE
[1] Heater 2, ZONE [2] Heater 3
, ZONE [3] 1: Ichiyo 4, ZONE [
4] 1:-Itoyo 5 is heated and controlled. In this control, as described above, in the ZONE where all the switches are OFF, the PID controllers (49, 50, 51,
52) is set to zero, and the corresponding Z
The control output to the ONE heater is fixed at zero. With the profile control described above, the specified ZO
The temperature in the processing section region corresponding to NE matches the target temperature, and the required soaking length is achieved only within this region.

Since the temperature control device of this embodiment performs the control operation according to the above-described procedure, a soaking length corresponding to the designated number of zones is secured in the processing section. In addition, since profile data is retained for each different number of designated zones, the previously captured profile data is not wasted each time the number of designated zones is changed, and the turnaround time when changing the number of zones is reduced. can be minimized. Furthermore, since the control output of undesignated zones automatically becomes zero, energy saving is achieved at the production site of semiconductor devices.

[Effects of the Invention] As explained above, according to the present invention, auto-profile and profile control are executed only for a specified number of heating zones among the plurality of heating zones constituting the heating means. A soaking length corresponding to the number of lots of wafers to be processed can be provided within the chamber. Furthermore, since the control output can be set to zero for zones that are not designated, waste of power can be avoided. Therefore, it can make a significant contribution to reducing the production cost and lead time of semiconductor devices in semiconductor device production sites, where not only small-mix mass production but also high-mix low-volume production has recently been carried out. .

[Brief explanation of the drawing]

1 to 8 show an embodiment of the temperature control device for semiconductor heat treatment equipment according to the present invention, FIG. 1 is an overall configuration diagram, and FIG. 2 is a diagram of the zoNE [1] in the temperature control device.
], FIG. 3 is a block diagram showing functional blocks for ZONE [2] in the temperature control device, FIG. 4 is a block diagram showing functional blocks for ZONE [3] in the temperature control device, Figure 5 is a block diagram showing the functional blocks for ZONE [4] in the temperature control device, and Figure 6 is a table showing the switching setting state of the profile control switch and cascade control switch corresponding to the designation of the number of zones when executing auto profile. , Fig. 7 is a table showing each ZONE profile corrector that is set to the operating state in response to the designation of the number of zones, and Fig. 8 is a table showing the ZONE profile correctors that are set to the operating state in response to the designation of the number of zones, and Figure 8 is a table showing the number of zones of the profile control switch and cascade control switch that are set to the operating state when profile control is executed. A table showing corresponding switching setting states, FIG. 9 is a configuration diagram showing a conventional temperature control device for a semiconductor heat treatment apparatus, and FIG. 10 is a block diagram showing the operation of the temperature control device in the conventional example using functional blocks. 2.3.4.5: Each ZONE heater (heating zone) constituting the heating means, 6: Processing section, 18.19.20.21: Each ZONE heater 11. : Heater output for each, 22: Temperature control device, 32.33.34.35: Each Z ON E 1. ：Target temperature, 36: Zone number setting signal, 45.46.47.48: Cascade PID controller for each ZoNE, 49.50.51, 52: ZONEPID controller serving as profile control execution means, 55-64 : Profile corrector that constitutes auto profile execution means together with cascade PID controller, 65-68.70-72.74.75.77: Profile control switch, 69.73.76.78: Zone number setting signal input means, and A cascade control switch that together with the profile control switch ε constitutes zone number designation means.

Claims (1)

[Scope of Claims] A temperature control device for controlling the temperature of a processing section in a semiconductor heat processing apparatus equipped with heating means divided into a plurality of heating zones for heating the processing section, comprising: A zone number designation means for designating one or a continuous required number of heating zones, and a target temperature of the processing section region corresponding to the heating zone designated by the zone number designation means is given, and the temperature of the processing section region is given. auto-profile execution means for determining a corrected target temperature of the specified heating zone in order to make it uniform; and profile control for controlling the specified heating zone based on the corrected target temperature obtained by the auto-profile execution means. 1. A temperature control device for a semiconductor heat treatment apparatus, comprising: execution means.