JPH03142912A - Etching process of aluminum foil for electrolytic condenser - Google Patents
Etching process of aluminum foil for electrolytic condenserInfo
- Publication number
- JPH03142912A JPH03142912A JP28273989A JP28273989A JPH03142912A JP H03142912 A JPH03142912 A JP H03142912A JP 28273989 A JP28273989 A JP 28273989A JP 28273989 A JP28273989 A JP 28273989A JP H03142912 A JPH03142912 A JP H03142912A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum foil
- etching
- etching process
- acid
- chemical etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 30
- 239000011888 foil Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000003486 chemical etching Methods 0.000 claims abstract description 20
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 3
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000008151 electrolyte solution Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005868 electrolysis reaction Methods 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- -1 chlorine ions Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Abstract
Description
〔産業上の利用分野〕
この発明は電解コンデンサ用アルミニウム箔のエツチン
グ方法に関し、さらに詳しく言えば、低圧用のアルミニ
ウム電解コンデンサ用電極箔のエツチング方法に関する
ものである。
〔従来の技術〕
一般に、低圧用電極箔をエツチングするには、塩素イオ
ン、を含む水溶液中で交流電流を流す交流エツチング法
によっている。工業的には、エツチング槽に電極を配置
し、その槽内にアルミニウム箔を一定速度で移動させる
連続エツチング方式が採用されている。
その場合において、エツチング槽内における理想的な電
流分布は、アルミニウム箔が槽内に入るのとほぼ同時に
急激に電流が立上り、すぐに一定電流密度の電流が流れ
ることとされている。すなわち、エツチング開始と同時
に電流が急激に立ち上がれば、その電場で十分に加速さ
れた塩素イオンがアルミニウム箔表面を攻撃するため、
多数の細かい腐食開始点(ビット)が形成され、高い拡
面倍率が得られるからである。これに対して、電流の立
上りが遅れる場合には、塩素イオンが十分に加速されな
いまま腐食開始点が形成されるため、その数が少なくな
り、その結果、少数の径の比較的大きな腐食孔が成長し
、十分な波面倍率が得られないことになる。
〔発明が解決しようとする課題〕
しかしながら、現実の連続エツチング法による製造工程
では、アルミニウム箔が電解液の液面に突入する際、そ
のアルミニウム箔表面に存在する自然酸化皮膜の抵抗に
より、電流の急激な立上りが阻害され、実際には電流が
徐々に増加していくような電流分布となる。したがって
、腐食開始点が減少し、十分な波面倍率が得られないと
いう問題があった。
〔課題を解決するための手段〕
上記課題を解決するため、この発明においては、アルミ
ニウム箔を電解液中に所定速度で連続的に浸漬しながら
、交流電流を印加して同アルミニウム箔をエツチングす
るに先立って、同アルミニウム箔を塩酸を主体とする水
溶液中において所定時間予備的に化学エツチングするよ
うにしている。
第1図を参照して具体的に説明すると、塩酸を主体とす
る水溶液が入れられた化学エツチング用のMllと電気
エツチング用の電解槽2とが用意され、アルミニウム箔
Aをまず、槽1内において予備的に化学エツチングし、
次いで電解槽2に浸漬して電気的に本エツチングを行う
、この場合、上記の化学エツチング液中に、皮膜形成作
用を有するリン酸、硫酸、硝酸、蓚酸などを添加すると
、より均一かつ高密度なピットが形成される。
槽1内における化学エツチングの時間としては。
30秒〜10分間、好ましくは2〜7分間がよい。30
秒以下の場合には化学エツチングの進行が不十分であり
、他方、10分以上かけると生産性の面で思わしくない
。また、温度としては10〜90℃の範囲で、好ましく
は20〜70℃がよい。10℃以下の場合には化学エツ
チングに時間がかかりすぎ、反対に90℃以上の場合に
は化学エツチングが速すぎ、エツチングが不均一になる
おそれがある。
電気的に本エツチングを行う電解槽2内には、3つの電
極プレート28〜2cがそれらの間にアルミニウムff
1Aをはさむように配置されているとともに、同期関係
にある2つの交流型14a、4bが用意される。そして
1図において真中の電極プレート2bと左側の電極プレ
ート2aとの間に一方の交流電源4aが接続されるとと
もに、真中の電極プレート2bと右側の電極プレート2
cとの間に他方の交流電源4bが接続される。なお1本
エツチング工程を二段エツチングもしくは三段エツチン
グのように多段エツチングとしてもよい。
〔作 用〕
この予備的な化学エツチングにより、アルミニウム箔表
面の自然酸化皮膜がその抵抗を無視できる程度まで取り
除かれる。
(実施例1)
アルミニウム箔をまず、HCI 9vt%を含むエツチ
ング液(液温40℃)中に2分間浸漬して予備的な化学
エツチングを行った。次に本エツチングとして、11C
:17wt%jlc131wt%、ll3PO,1wt
%で液温30℃のエツチング液内において、電流密度4
00mA/aJ、周波数30)Izの交流電流を6分間
印加して電気的なエツチングを行った。
(実施例2)
実施例1と同じ条件にて予備的に化学エツチングを行っ
た。しかるのち、 IIcI 7wt%、AlCl、
ltt%。
11、Po41wt%、llN0.1wt%のエツチン
グ液を使用し、次のように本エツチングを三段階行った
。
〔−段目〕液温を30℃とし、電流!!y度400mA
/d、周波数3011zの交流電流を2分間通電した。
〔二段目〕液温を25℃とし、電流15度300+++
A/a&、周波数2511zの交流電流を3分間通電し
た。
〔三段目〕液温を20℃とし、電流密度200mA/a
l、周波数2011zの交流電流を3分間通電した。
(実施例3)
アルミニウム箔をまず、 )ICI 7wt%、H,P
O41vt%で液温30℃の予備エツチング液中に3分
間浸漬して予備的に化学エツチングを行った。次に、実
施例1と同じ条件の本エツチング、すなわちIC:l
7vt%、AlCl、 1wt%、)13PO41w
t%で液温30℃のエツチング液内において、電流密度
400mA/aJ、周波数30胞の交流電流を6分間印
加して電気的な本エツチングを行った。
(実施例4)
実施例3と同じ条件で予備な化学エツチングを行った1
次に、実施例2と同じ条件で1本エツチングを三段階行
った。
〔比較例1〕
予備エツチングを行うことなく、アルミニウム箔をII
cI 7wt%、AlCl、 1wt%、It、PO,
lvt%で液温30℃のエツチング液内において、電流
密度400■A/d。
周波数30止の交流電流を6分間印加して電気的なエツ
チングを行った。
〔比較例2〕
)1cI 7wt%、AlCl、 1wt%、)13P
O,lvt%、llN0. l@It%のエツチング液
を使用し、予備エツチングを行うことなく、次のように
本エツチングを三段階行った。
〔−段目〕液温を30℃とし、電流密度400■A/a
I、周波数30胞の交流電流を2分間通電した。
〔二段目〕液温を25℃とし、電流密度300mA/a
J、周波数25#hの交流電流を3分間通電した。
〔三段目〕液温を20℃とし、電流密度200mA/a
J、周波数2011zの交流電流を3分間通電した。
上記実施例および比較例にてそれぞれエツチングされた
各アルミニウム箔について、その50v化威容量(μF
/cd)の測定値と、折曲テストの耐用回数を次設に示
す。[Industrial Application Field] The present invention relates to a method of etching aluminum foil for electrolytic capacitors, and more specifically, to a method of etching electrode foil for low-voltage aluminum electrolytic capacitors. [Prior Art] In general, low-voltage electrode foils are etched using an alternating current etching method in which an alternating current is passed in an aqueous solution containing chlorine ions. Industrially, a continuous etching method is used in which an electrode is placed in an etching tank and an aluminum foil is moved into the tank at a constant speed. In this case, the ideal current distribution in the etching tank is such that the current suddenly rises almost at the same time as the aluminum foil enters the tank, and then a current with a constant current density flows immediately. In other words, if the current suddenly rises at the same time as etching starts, the chlorine ions are sufficiently accelerated by the electric field and attack the aluminum foil surface.
This is because a large number of fine corrosion starting points (bits) are formed and a high surface magnification can be obtained. On the other hand, if the rise of the current is delayed, corrosion initiation points are formed before the chlorine ions are sufficiently accelerated, resulting in fewer corrosion holes with a smaller number of relatively large diameters. As a result, sufficient wavefront magnification cannot be obtained. [Problem to be solved by the invention] However, in the actual manufacturing process using the continuous etching method, when the aluminum foil plunges into the liquid surface of the electrolyte, the resistance of the natural oxide film existing on the surface of the aluminum foil causes the current to drop. The sudden rise is inhibited, and the current distribution actually becomes such that the current gradually increases. Therefore, there was a problem in that the number of corrosion initiation points decreased and a sufficient wavefront magnification could not be obtained. [Means for Solving the Problems] In order to solve the above problems, in the present invention, the aluminum foil is etched by applying an alternating current while continuously immersing the aluminum foil in an electrolytic solution at a predetermined speed. Prior to this, the aluminum foil is preliminarily chemically etched in an aqueous solution containing mainly hydrochloric acid for a predetermined period of time. To explain specifically with reference to FIG. 1, an Mll for chemical etching containing an aqueous solution containing mainly hydrochloric acid and an electrolytic bath 2 for electric etching are prepared. Preliminary chemical etching at
Next, main etching is performed electrically by immersion in an electrolytic bath 2. In this case, adding phosphoric acid, sulfuric acid, nitric acid, oxalic acid, etc., which have a film-forming effect to the chemical etching solution described above, will result in a more uniform and dense etching. A pit is formed. As for the chemical etching time in tank 1. The time is preferably 30 seconds to 10 minutes, preferably 2 to 7 minutes. 30
If it takes less than a second, the progress of chemical etching is insufficient, while if it takes more than 10 minutes, it is unsatisfactory in terms of productivity. Further, the temperature is in the range of 10 to 90°C, preferably 20 to 70°C. If the temperature is 10° C. or lower, chemical etching takes too much time, whereas if the temperature is 90° C. or higher, chemical etching is too fast and may result in non-uniform etching. In the electrolytic bath 2 in which main etching is performed electrically, three electrode plates 28 to 2c are arranged between them with an aluminum ff
Two alternating current types 14a and 4b are provided which are arranged to sandwich 1A and are in a synchronous relationship. In FIG. 1, one AC power source 4a is connected between the middle electrode plate 2b and the left electrode plate 2a, and the middle electrode plate 2b and the right electrode plate 2a are connected to each other.
The other AC power source 4b is connected between the AC power source 4b and the AC power source 4b. Note that one etching process may be replaced by multi-stage etching such as two-stage etching or three-stage etching. [Operation] This preliminary chemical etching removes the natural oxide film on the surface of the aluminum foil to the extent that its resistance can be ignored. (Example 1) First, an aluminum foil was immersed in an etching solution (solution temperature: 40° C.) containing 9 vt% HCI for 2 minutes to perform preliminary chemical etching. Next, as the main etching, 11C
:17wt%jlc131wt%, ll3PO, 1wt
%, in an etching solution with a liquid temperature of 30°C, a current density of 4
Electrical etching was performed by applying an alternating current of 00 mA/aJ and a frequency of 30) Iz for 6 minutes. (Example 2) Preliminary chemical etching was performed under the same conditions as in Example 1. After that, IIcI 7wt%, AlCl,
ltt%. 11. Using an etching solution containing 1 wt% of Po4 and 0.1 wt% of IIN, the main etching was carried out in three stages as follows. [-th row] Set the liquid temperature to 30℃, and check the current! ! y degree 400mA
/d, and an alternating current with a frequency of 3011z was applied for 2 minutes. [Second stage] Liquid temperature is 25℃, current is 15℃ 300++
A/a&, an alternating current with a frequency of 2511z was applied for 3 minutes. [Third stage] Liquid temperature is 20℃, current density is 200mA/a
1, and an alternating current with a frequency of 2011z was applied for 3 minutes. (Example 3) Aluminum foil was first coated with )ICI 7wt%, H, P
Preliminary chemical etching was performed by immersing it in a pre-etching solution containing 1 vt% O4 and a liquid temperature of 30° C. for 3 minutes. Next, main etching was performed under the same conditions as in Example 1, that is, IC:l
7vt%, AlCl, 1wt%, )13PO41w
Main electrical etching was performed by applying an alternating current with a current density of 400 mA/aJ and a frequency of 30 cells for 6 minutes in an etching solution with a temperature of 30° C. and a concentration of 400 mA/aJ. (Example 4) Preliminary chemical etching was performed under the same conditions as Example 3.
Next, one-line etching was performed in three stages under the same conditions as in Example 2. [Comparative Example 1] Aluminum foil was exposed to II without pre-etching.
cI 7wt%, AlCl, 1wt%, It, PO,
In an etching solution with lvt% and a liquid temperature of 30°C, the current density was 400 A/d. Electrical etching was performed by applying an alternating current with a frequency of 30 for 6 minutes. [Comparative Example 2] )1cI 7wt%, AlCl, 1wt%, )13P
O, lvt%, llN0. Using an etching solution of 1@It%, main etching was carried out in three stages as follows without pre-etching. [-th stage] Liquid temperature is 30℃, current density is 400A/a
I. An alternating current with a frequency of 30 cells was applied for 2 minutes. [Second stage] Liquid temperature is 25℃, current density is 300mA/a
J, an alternating current with a frequency of 25#h was applied for 3 minutes. [Third stage] Liquid temperature is 20℃, current density is 200mA/a
J, an alternating current with a frequency of 2011z was applied for 3 minutes. Regarding each aluminum foil etched in the above Examples and Comparative Examples, its 50V power capacity (μF
/cd) and the durability of the bending test are shown below.
この表より1本エツチングに先立って、予備的に化学エ
ツチングを行うことにより、静電容量および機械的強度
ともに優れたアルミニウムエツチング箔が得られる。特
に、実施例2および実施例4のように本エツチングが多
段エツチングであっても予備エツチングは十分効果があ
ることが分かる。
〔発明の効果〕
以上説明したように、この発明によれば、本エツチング
に先立って、予備的な化学エツチングを行ってアルミニ
ウム箔表面の自然酸化皮膜をその抵抗が無視できる程度
まで取り除くようにしたことにより、本エツチング時に
多数の細かい腐食開始点(ピット)が形成され、高い波
面倍率が得られる。また1機械的強度の点においても優
れた電解コンデンサ用のアルミニウム箔が得られる。From this table, it can be seen that by performing preliminary chemical etching prior to etching, an aluminum etched foil having excellent capacitance and mechanical strength can be obtained. In particular, it can be seen that even if the main etching is multi-stage etching as in Examples 2 and 4, the preliminary etching is sufficiently effective. [Effects of the Invention] As explained above, according to the present invention, prior to the main etching, preliminary chemical etching is performed to remove the natural oxide film on the surface of the aluminum foil to the extent that its resistance can be ignored. As a result, many fine corrosion initiation points (pits) are formed during the main etching, and a high wavefront magnification can be obtained. Furthermore, an aluminum foil for electrolytic capacitors which is excellent also in terms of mechanical strength can be obtained.
第1図はこの発明の実施に供されるエツチング装置の一
例を概略的に示した模式図である。
図中、1は化学エツチング用の槽、2は電解槽である。FIG. 1 is a schematic diagram schematically showing an example of an etching apparatus used for carrying out the present invention. In the figure, 1 is a chemical etching tank, and 2 is an electrolytic tank.
Claims (2)
浸漬しながら、交流電流を印加して同アルミニウム箔を
エッチングする電解コンデンサ用アルミニウム箔のエッ
チング方法において、 上記エッチングの前工程として、上記アルミニウム箔を
塩酸を主体とした水溶液中において所定時間予備的に化
学エッチングすることを特徴とする電解コンデンサ用ア
ルミニウム箔のエッチング方法。(1) In an etching method for aluminum foil for electrolytic capacitors, the aluminum foil is etched by applying an alternating current while continuously immersing the aluminum foil in an electrolytic solution at a predetermined speed, as a pre-step to the etching described above. A method for etching aluminum foil for electrolytic capacitors, which comprises preliminary chemical etching of aluminum foil for a predetermined period of time in an aqueous solution containing mainly hydrochloric acid.
、蓚酸、硫酸、硝酸の少なくとも一つを添加剤として混
入する請求項1に記載の電解コンデンサ用アルミニウム
箔のエッチング方法。(2) The method for etching aluminum foil for an electrolytic capacitor according to claim 1, wherein at least one of phosphoric acid, oxalic acid, sulfuric acid, and nitric acid is mixed as an additive into the etching solution for the chemical etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28273989A JPH03142912A (en) | 1989-10-30 | 1989-10-30 | Etching process of aluminum foil for electrolytic condenser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28273989A JPH03142912A (en) | 1989-10-30 | 1989-10-30 | Etching process of aluminum foil for electrolytic condenser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03142912A true JPH03142912A (en) | 1991-06-18 |
Family
ID=17656421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28273989A Pending JPH03142912A (en) | 1989-10-30 | 1989-10-30 | Etching process of aluminum foil for electrolytic condenser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03142912A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010131290A1 (en) * | 2009-05-12 | 2010-11-18 | 日本軽金属株式会社 | Manufacturing method for an aluminum electrode plate for electrolytic capacitor and manufacturing apparatus therefor |
US10115815B2 (en) | 2012-12-28 | 2018-10-30 | Cree, Inc. | Transistor structures having a deep recessed P+ junction and methods for making same |
US10840367B2 (en) | 2012-12-28 | 2020-11-17 | Cree, Inc. | Transistor structures having reduced electrical field at the gate oxide and methods for making same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145817A (en) * | 1984-12-20 | 1986-07-03 | 富士通株式会社 | Manufacture of aluminum solid electrolytic capacitor |
JPS61210191A (en) * | 1985-02-28 | 1986-09-18 | スプラグ・エレクトリツク・カンパニー | Method for etching aluminium electrolytic condenser |
JPS63299309A (en) * | 1987-05-29 | 1988-12-06 | Matsushita Electric Ind Co Ltd | Manufacture of electrode foil for aluminum electrolytic capacitor |
-
1989
- 1989-10-30 JP JP28273989A patent/JPH03142912A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61145817A (en) * | 1984-12-20 | 1986-07-03 | 富士通株式会社 | Manufacture of aluminum solid electrolytic capacitor |
JPS61210191A (en) * | 1985-02-28 | 1986-09-18 | スプラグ・エレクトリツク・カンパニー | Method for etching aluminium electrolytic condenser |
JPS63299309A (en) * | 1987-05-29 | 1988-12-06 | Matsushita Electric Ind Co Ltd | Manufacture of electrode foil for aluminum electrolytic capacitor |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010131290A1 (en) * | 2009-05-12 | 2010-11-18 | 日本軽金属株式会社 | Manufacturing method for an aluminum electrode plate for electrolytic capacitor and manufacturing apparatus therefor |
JP5408247B2 (en) * | 2009-05-12 | 2014-02-05 | 日本軽金属株式会社 | Method and apparatus for manufacturing aluminum electrode plate for electrolytic capacitor |
US10115815B2 (en) | 2012-12-28 | 2018-10-30 | Cree, Inc. | Transistor structures having a deep recessed P+ junction and methods for making same |
US10840367B2 (en) | 2012-12-28 | 2020-11-17 | Cree, Inc. | Transistor structures having reduced electrical field at the gate oxide and methods for making same |
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