JPH0313200B2 - - Google Patents
Info
- Publication number
- JPH0313200B2 JPH0313200B2 JP15084684A JP15084684A JPH0313200B2 JP H0313200 B2 JPH0313200 B2 JP H0313200B2 JP 15084684 A JP15084684 A JP 15084684A JP 15084684 A JP15084684 A JP 15084684A JP H0313200 B2 JPH0313200 B2 JP H0313200B2
- Authority
- JP
- Japan
- Prior art keywords
- zone
- raw material
- molten salt
- crystal growth
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 22
- 229910001602 chrysoberyl Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004090 dissolution Methods 0.000 claims description 9
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 8
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 6
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 4
- NMHMDUCCVHOJQI-UHFFFAOYSA-N lithium molybdate Chemical compound [Li+].[Li+].[O-][Mo]([O-])(=O)=O NMHMDUCCVHOJQI-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims 1
- 229910001947 lithium oxide Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000003746 feather Anatomy 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は溶剤(フラツクス)を用いたクリソベ
リル単結晶(斜方晶系)の合成方法に関し、詳し
くは溶融塩より良質なクリソベリル単結晶を効率
よく且つ経済的に合成する方法に関するものであ
る。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for synthesizing chrysoberyl single crystals (orthorhombic system) using a solvent (flux), and more specifically, a method for efficiently and economically producing chrysoberyl single crystals of better quality than molten salt. It is related to a method of synthetic synthesis.
〔従来技術〕
従来、クリソベリルの合成方法としては水熱
法、溶剤を用いた溶融塩法が知られているが、本
発明の指向される所は、この溶融塩法の改良に属
する。溶融塩法は水熱法に較べ使用エネルギー
(熱、圧力)及び育成時間が短かく、装置、使用
部材が大巾に簡略化でき経済的であるという利点
をもつている。すなわち、溶融塩法は、ほぼゾー
ンの組成比を示す、酸化ベリリウム、酸化アルミ
ニウム、必要に応じて酸化クロム、酸化鉄その他
の補助着色剤もしくはドープ剤からなる原料物質
に、溶剤としての五酸化パナジウム、三酸化モリ
ブデン、モリブデン酸リチウム、水酸化リチウム
の溶剤から選ばれた1種もしくは2種以上を加
え、これを前記溶剤の溶融温度以上に加熱して溶
融塩を形成して、この溶融塩に温度差をつけて長
時間保持するか或は一定時間保持後、ゆるやかな
温度勾配をもつて徐冷するかいづれかの操作で溶
融塩中にクリソベリル種子結晶を配置することに
よりこの種子結晶の囲りにクリソベリルを生成又
は育成する方法である。[Prior Art] Conventionally, hydrothermal methods and molten salt methods using a solvent have been known as methods for synthesizing chrysoberyl, but the present invention is directed to improving these molten salt methods. The molten salt method uses less energy (heat, pressure) and growth time than the hydrothermal method, and has the advantage of being economical because the equipment and parts used can be greatly simplified. That is, in the molten salt method, panadium pentoxide as a solvent is added to a raw material consisting of beryllium oxide, aluminum oxide, and if necessary chromium oxide, iron oxide, and other auxiliary colorants or dopants, which have a composition ratio of almost the zone. , molybdenum trioxide, lithium molybdate, and lithium hydroxide are added to the molten salt and heated to a temperature higher than the melting temperature of the solvent to form a molten salt. By placing chrysoberyl seed crystals in the molten salt by holding it for a long time with a temperature difference, or by holding it for a certain period of time and then slowly cooling it with a gentle temperature gradient, the surroundings of the seed crystals are formed. This is a method of producing or growing chrysoberyl.
この様に溶融塩法は融点以上、通常900℃〜
1500℃の温度範囲において生成又は育成するとが
できるが、結晶中にインクルージヨンを含まない
良質のクリソベリル単結晶育成となると、ルツボ
炉の温度ブロフアイル、成長速度、溶剤の種類等
いくつもの管理すべきポイントがある。またイン
クルージヨンには大きく分けて溶融塩をとり込ん
だものすなわちフエザーインクルージヨンと、同
一ルツボ内でクリソベリルと同様に生成する結晶
性物質等をとり込んだものとがあり、宝石として
最も重要なポイントである透明度低下の主原因に
なつている。これらのインクルージヨンは溶融塩
法によるクリソベリル単結晶合成においては現段
階まではさけられないことであり、これらがクリ
ソベリル単結晶の品質上最大の問題となつてい
る。 In this way, the molten salt method uses temperatures above the melting point, usually 900℃~
It can be produced or grown in a temperature range of 1500℃, but when it comes to growing high-quality chrysoberyl single crystals that do not contain inclusions in the crystal, there are many points that need to be managed, such as the temperature profile of the crucible furnace, the growth rate, and the type of solvent. There is. Inclusions can be broadly divided into those that incorporate molten salt, that is, feather inclusions, and those that incorporate crystalline substances that are produced in the same crucible in the same way as chrysoberyl. This is the main cause of the decline in transparency, which is a key point. These inclusions cannot be avoided at this stage in the synthesis of chrysoberyl single crystals by the molten salt method, and they are the biggest problem in terms of the quality of chrysoberyl single crystals.
前記インクルージヨンの原因の第1は、結晶生
長スピードをコントロールできない為に生じる結
晶中の内部応力によつて割れが発生し、フエザー
インクルージヨンが発生するものである。又、第
2は結晶成長スピードをコントロールできない為
に生じる種子結晶表面のバンチングである。いず
れの原因についても結晶成長スピードを長期間一
定にしかも低成長に管理すれば発生を防止するこ
とが可能である。 The first cause of inclusions is that cracks occur due to internal stress in the crystal caused by the inability to control the crystal growth speed, resulting in feather inclusions. The second problem is bunching on the surface of the seed crystal, which occurs because the crystal growth speed cannot be controlled. Any cause can be prevented by keeping the crystal growth speed constant for a long period of time and controlling the growth to be low.
本発明は以上の問題点を解決するもので、温度
コントロールと結晶成長スピードを管理すること
によつて、良質なクリソベリル単結晶を合成する
ことにある。
The present invention solves the above-mentioned problems by synthesizing high-quality chrysoberyl single crystals by controlling temperature and crystal growth speed.
本発明は、特に結晶成長スピードをコントロー
ルする為に、ガラス化又は焼結化させた原料物質
(酸化ベリリウム、酸化アルミニウム、着色剤と
しての酸化クロム、酸化鉄等)とともに、さらに
ルツボ内をバツフルで2つに分け、それぞれ、原
料物質溶解ゾーン、種子結晶育成ゾーン、とし、
そのいずれも温度管理を行うことによつて溶解量
をコントロールするとともに、種子結晶ゾーンへ
の原料物質の輸送量もコントロールすることを特
徴としたものであり、本発明の効果をより一層明
確にする為に実施例をまじえて詳細に説明する。
In particular, in order to control the crystal growth speed, the present invention uses a buff-filled material inside the crucible together with vitrified or sintered raw materials (beryllium oxide, aluminum oxide, chromium oxide as a coloring agent, iron oxide, etc.). Divided into two zones, each consisting of a raw material dissolution zone and a seed crystal growth zone,
All of them are characterized by controlling the amount of dissolution by controlling the temperature and also controlling the amount of raw materials transported to the seed crystal zone, which further clarifies the effects of the present invention. Therefore, a detailed explanation will be given along with examples.
〔実施例 1〕 (1) 原料 酸化ベリリウム 4.0g 酸化アルミニウム 15.0g 酸化鉄 0.5g 上記原料物質を混合焼結した。[Example 1] (1) Raw materials Beryllium oxide 4.0g Aluminum oxide 15.0g Iron oxide 0.5g The above raw materials were mixed and sintered.
溶剤はモリブデン酸リチウムと三酸化モリブデ
ンを1:1の割合で400g用いた。 The solvent used was 400 g of lithium molybdate and molybdenum trioxide in a 1:1 ratio.
(2) 装置及び方法
上記の物質を投入する容器には白金ルツボを使
用した。加熱は第1図の装置を用いた。(2) Apparatus and method A platinum crucible was used as the container into which the above substances were charged. For heating, the apparatus shown in FIG. 1 was used.
第1図において、1は加熱装置であり、2は加
熱装置の放熱防止又は塵埃混入防止のための加熱
装置のフタである。3のヒーターによつて9の白
金るつぼを加熱し、4の熱電対温度計の測定端子
を9の白金ルツボに接触させて温度測定をして、
加熱装置の温度制御を行なう。 In FIG. 1, 1 is a heating device, and 2 is a lid of the heating device for preventing heat radiation from the heating device or preventing dust from entering. Heat the platinum crucible 9 with the heater 3, and measure the temperature by bringing the measurement terminal of the thermocouple thermometer 4 into contact with the platinum crucible 9.
Controls the temperature of the heating device.
6は種子結晶育成ゾーン8に投入された種子結
晶であり、5は原料物質溶解ゾーン7に投入され
た原料物質である。 Reference numeral 6 indicates a seed crystal introduced into the seed crystal growth zone 8, and reference numeral 5 indicates a raw material introduced into the raw material dissolution zone 7.
以下7の原料物質溶解ゾーンをaゾーン、8の
種子結晶育成ゾーンをbゾーンとして説明する。 In the following description, the raw material dissolution zone 7 will be referred to as zone a, and the seed crystal growth zone 8 will be referred to as zone b.
aゾーンに焼結体(酸化ベリリウム、酸化アル
ミニウム)を投入した。bゾーンには、種子結晶
を投入した。 A sintered body (beryllium oxide, aluminum oxide) was placed in zone a. Seed crystals were placed in zone b.
加熱温度は、aゾーン980℃、bゾーン850℃に
設定した。 The heating temperature was set at 980°C for the a zone and 850°C for the b zone.
(3) 結果
種子結晶成長スピードを長時間一定に保持でき
育成したクリソベリル単結晶においてインクルー
ジヨンの発生はみとめられない。(3) Results No inclusions were observed in the chrysoberyl single crystal grown by maintaining the seed crystal growth speed constant for a long time.
〔実施例 2〕
(1) 原料
原料物質は実施例1と同じ
溶剤は、モリブデン酸リチウム、三酸化モリブ
デン、五酸化バナジウムを1:1:1の割合で
400g用いた。[Example 2] (1) Raw materials The raw materials are the same as in Example 1. The solvent is lithium molybdate, molybdenum trioxide, and vanadium pentoxide in a ratio of 1:1:1.
400g was used.
(2) 装置及び方法
装置及び容器内のレイアウトは実施例1と同
じ。(2) Apparatus and method The apparatus and internal layout of the container were the same as in Example 1.
加熱温度は、aゾーン925℃、bゾーン900℃に
設定した。 The heating temperature was set at 925°C for the a zone and 900°C for the b zone.
(3) 結果
種子結晶成長スピードを長時間一定に保持でき
育成したクリソベリル単結晶においてインクルー
ジヨンの発生はみとめられない。(3) Results No inclusions were observed in the chrysoberyl single crystal grown by maintaining the seed crystal growth speed constant for a long time.
〔実施例 3〕 (1) 原料 酸化ベリリウム 4.0g 酸化アルミニウム 15.0g 酸化鉄 0.5g 酸化クロム 0.5g 上記原料物質を混合焼結した。[Example 3] (1) Raw materials Beryllium oxide 4.0g Aluminum oxide 15.0g Iron oxide 0.5g Chromium oxide 0.5g The above raw materials were mixed and sintered.
溶剤は、五酸化バナジウム、水酸化リチウムを
10:1の割合で400g用いた。 Solvents include vanadium pentoxide and lithium hydroxide.
400g was used at a ratio of 10:1.
(2) 装置及び方法
装置及び容器内のレイアウトは実施例1と同じ
加熱温度は、aゾーン1070℃、bゾーン1040℃に
設定した。(2) Apparatus and method The layout inside the apparatus and container was the same as in Example 1, and the heating temperatures were set at 1070°C in zone a and 1040°C in zone b.
(3) 結果
種子結晶成長スピードを長時間一定に保持でき
育成したクリソベリル単結晶においてインクルー
ジヨンの発生はみとめられない。(3) Results No inclusions were observed in the chrysoberyl single crystal grown by maintaining the seed crystal growth speed constant for a long time.
以上述べたように、
本発明によれば、加熱装置を原料物質溶解ゾー
ンと種子結晶育成ゾーンとに分け、各々のゾーン
に所定の原料物質又は種子結晶を投入して、両ゾ
ーン間に温度差をつけてクリソベリル単結晶を合
成又は育成するので
インクルージヨンの全くなく、割れることのな
い大型の単結晶を容易に得ることができ、コスト
の安いクリソベリル単結晶を提供することができ
る。
As described above, according to the present invention, a heating device is divided into a raw material melting zone and a seed crystal growth zone, a predetermined raw material or seed crystal is introduced into each zone, and the temperature difference between the two zones is maintained. Since chrysoberyl single crystals are synthesized or grown by attaching them, it is possible to easily obtain large single crystals that have no inclusions and do not break, and it is possible to provide chrysoberyl single crystals at low cost.
第1図は、本発明に係る加熱装置の概要を示す
図であり、第1図aは本装置の上面図、第1図b
は本装置の正面図を示す。
……加熱装置、……加熱装置のフタ、…
…ヒーター、……熱電対温度計の測定端子、
……原料物質、……種子結晶、……原料物質
溶解ゾーン、……種子結晶育成ゾーン、……
白金ルツボ。
FIG. 1 is a diagram showing an outline of a heating device according to the present invention, FIG. 1a is a top view of the device, and FIG. 1b is a top view of the device.
shows a front view of this device. ...Heating device, ...Heating device lid, ...
...heater, ...measuring terminal of thermocouple thermometer,
...raw material, ...seed crystal, ...raw material dissolution zone, ...seed crystal growth zone, ...
Platinum crucible.
Claims (1)
ム、酸化アルミニウム及び必要に応じて酸化クロ
ムと酸化鉄の着色剤を加えてなる原料物質に溶剤
としてのモリブデン酸リチウム、三酸化モリブデ
ン、水酸化リチウム、五酸化バナジウムの中か選
ばれた少なくとも1種を加えた混合物を、バツフ
ルで原料物質溶解ゾーンと種子結晶育成ゾーンと
に分けたルツボの前記原料物質溶解ゾーンに投入
し、前記ルツボを前記溶剤の溶解温度以上に加熱
して前記溶剤を溶融し、前記原料物質溶解ゾーン
及び前記種子結晶育成ゾーンに前記溶剤の溶融塩
を満たし、 前記溶融塩が満たされた前記種子結晶育成ゾー
ンに種子結晶を投入し、前記原料物質溶解ゾーン
の溶融塩の温度より前記種子結晶育成ゾーンの溶
融塩の温度を低くしてクリソベリル単結晶を合成
又は育成をすることを特徴とするクリソベリル単
結晶の合成方法。[Claims] 1. Lithium molybdate, molybdenum trioxide, and water as a solvent to a raw material obtained by adding beryllium oxide, aluminum oxide, and, if necessary, coloring agents of chromium oxide and iron oxide, each having an approximately chrysoberyl composition ratio. A mixture containing at least one selected from lithium oxide and vanadium pentoxide is charged into the raw material dissolution zone of the crucible, which is divided into a raw material dissolution zone and a seed crystal growth zone by a batch, and the crucible is heated. The solvent is melted by heating to a temperature higher than the melting temperature of the solvent, the raw material dissolution zone and the seed crystal growth zone are filled with a molten salt of the solvent, and the seeds are placed in the seed crystal growth zone filled with the molten salt. A method for synthesizing or growing a chrysoberyl single crystal by adding crystals and making the temperature of the molten salt in the seed crystal growth zone lower than the temperature of the molten salt in the raw material dissolution zone. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15084684A JPS6131398A (en) | 1984-07-20 | 1984-07-20 | Method for synthesizing chrysoberyl single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15084684A JPS6131398A (en) | 1984-07-20 | 1984-07-20 | Method for synthesizing chrysoberyl single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6131398A JPS6131398A (en) | 1986-02-13 |
JPH0313200B2 true JPH0313200B2 (en) | 1991-02-21 |
Family
ID=15505652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15084684A Granted JPS6131398A (en) | 1984-07-20 | 1984-07-20 | Method for synthesizing chrysoberyl single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6131398A (en) |
-
1984
- 1984-07-20 JP JP15084684A patent/JPS6131398A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6131398A (en) | 1986-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |