JPH03128681A - Piezoelectric/electrostrictive film type actuator - Google Patents

Piezoelectric/electrostrictive film type actuator

Info

Publication number
JPH03128681A
JPH03128681A JP2011174A JP1117490A JPH03128681A JP H03128681 A JPH03128681 A JP H03128681A JP 2011174 A JP2011174 A JP 2011174A JP 1117490 A JP1117490 A JP 1117490A JP H03128681 A JPH03128681 A JP H03128681A
Authority
JP
Japan
Prior art keywords
piezoelectric
electrostrictive
film
ceramic substrate
electrostrictive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011174A
Other languages
Japanese (ja)
Other versions
JP2842448B2 (en
Inventor
Yukihisa Takeuchi
幸久 武内
Masato Komazawa
正人 駒澤
Koji Kimura
浩二 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16053882&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH03128681(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to DE69026765T priority Critical patent/DE69026765T2/en
Priority to SG9601033A priority patent/SG83626A1/en
Priority to EP90307520A priority patent/EP0408306B1/en
Publication of JPH03128681A publication Critical patent/JPH03128681A/en
Priority to US08/384,469 priority patent/US6441537B1/en
Priority to US08/392,083 priority patent/US5691593A/en
Priority to US08/452,092 priority patent/US5622748A/en
Priority to HK24197A priority patent/HK24197A/en
Publication of JP2842448B2 publication Critical patent/JP2842448B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezo-electric relays

Abstract

PURPOSE:To obtain a piezoelectric/electrostrictive film type actuator having the high speed of response and large generating force by laminating a first electrode film, a piezoelectric/electrostrictive film and a second electrode film onto a ceramic substrate. CONSTITUTION:A lower electrode film 4, a piezoelectric/electrostrictive film 6 and an upper electrode film 8 are laminated successively onto one surface of a ceramic substrate 2. The lower and upper electrode films 4, 8 are extended from the end section of the piezoelectric/electrostrictive film 6 respectively, lead sections 4a, 8a are shaped, and electricity is conducted through each electrode film 4, 8 through these lead sections 4a, 8a. The electric-field induced strain of the piezoelectric/electrostrictive film 6 is induced by conduction, and flexing displacement in the direction vertical to the board surface of the ceramic substrate 2 or generating force is developed by the transversal effect of the strain. Accordingly, large displacement is acquired at low driving voltage, and a piezoelectric/electrostrictive film type actuator, the speed of response of which is increased and the degree of integration of which can be improved, is obtained.

Description

【発明の詳細な説明】 (技術分野) 本発明は、変位制御素子、個体素子モータ、インクジェ
ットヘッド、リレー、スイッチ、シャッター、プリント
ヘッド、ポンプ、ファン等に用いられる圧電/電歪膜型
アクチュエータに関するものである。なお、ここで述べ
るアクチュエータとは、電気エネルギーを、機械エネル
ギーに変換、つまり機械的な変位又は応力に変換する素
子を意味するものである。
Detailed Description of the Invention (Technical Field) The present invention relates to a piezoelectric/electrostrictive film actuator used in displacement control elements, solid element motors, inkjet heads, relays, switches, shutters, print heads, pumps, fans, etc. It is something. Note that the actuator described here means an element that converts electrical energy into mechanical energy, that is, into mechanical displacement or stress.

(背景技術) 近年、光学や精密加工等の分野において、サブミクロン
のオーダーで光路長や位置を調整する変位素子が所望さ
れるようになってきており、これに応えるものとして、
強誘電体等の圧電/電歪材料に電界を加えたときに惹起
される逆圧電効果や電歪効果に基づくところの変位を利
用した素子である圧電/電歪アクチュエータの開発が進
められている。
(Background Art) In recent years, in fields such as optics and precision processing, there has been a demand for displacement elements that adjust optical path length and position on the order of submicrons.
The development of piezoelectric/electrostrictive actuators, which are elements that utilize displacement based on the inverse piezoelectric effect and electrostrictive effect induced when an electric field is applied to piezoelectric/electrostrictive materials such as ferroelectrics, is underway. .

ところで、この圧電/電歪アクチュエータの構造として
は、従来から、モノモルフ型、ユニモルフ型、バイモル
フ型、積層型等が知られているが、その中で、モノモル
フ型、ユニモルフ型、バイモルフ型は、電界誘起歪みの
横効果を利用して屈曲変位を得るために、比較的大きな
変位が得られるものの、発生力が小さく、また応答速度
が遅く、電気機械変換効率が悪いという問題を内在する
ものであった。一方、積層型は、電界誘起歪みの縦効果
を利用しているために、それら発生力や応答速度におい
て優れ、また電気機械変換効率も高いものであるが、発
生変位が小さいという問題を内在している。
By the way, as the structure of this piezoelectric/electrostrictive actuator, monomorph type, unimorph type, bimorph type, laminated type, etc. are known, but among these, the monomorph type, unimorph type, and bimorph type are Although a relatively large displacement can be obtained by using the transverse effect of induced strain, it has the inherent problems of a small generated force, slow response speed, and poor electromechanical conversion efficiency. Ta. On the other hand, the laminated type utilizes the longitudinal effect of electric field-induced strain, so it is superior in terms of generated force and response speed, and also has high electromechanical conversion efficiency, but it has the inherent problem of small generated displacement. ing.

しかも、それら従来のユニモルフ型やバイモルフ型のア
クチュエータにおいては、何れも、圧電/電歪板等の板
状の構成部材を接着剤を用いて張り付けてなる構造を採
用するものであるために、アクチュエータとしての作動
の信頼性にも問題があるものであった。
Moreover, these conventional unimorph and bimorph actuators each employ a structure in which plate-shaped components such as piezoelectric/electrostrictive plates are attached using adhesive. There were also problems with the reliability of its operation.

このように、従来の圧電/電歪アクチュエータには、そ
れぞれ一長一短があり、また解決されるべき幾つかの問
題を内在するものであったのである。
As described above, conventional piezoelectric/electrostrictive actuators each have their own advantages and disadvantages, and also have several inherent problems that need to be solved.

(解決課B) ここにおいて、本発明は、かかる事情を背景にして為さ
れたものであって、その課題とするところは、接着剤等
で張り付けた構造ではなく、相対的に低駆動電圧で大変
位が得られ、応答速度が速く、且つ発生力が大きく、ま
た高集積化が可能である構造の圧電/電歪膜型アクチュ
エータを提供しようとするものである。
(Solution Division B) The present invention was made against this background, and its problem is not a structure stuck with an adhesive or the like, but a relatively low driving voltage. The present invention aims to provide a piezoelectric/electrostrictive film type actuator that has a structure that allows large displacement, fast response speed, and large generated force, and allows for high integration.

(解決手段) そして、本発明にあっては、そのような課題解決のため
に、セラミック基板の少なくとも一方の面上に、第一の
電極膜と圧電/電歪膜と第二の電極膜との組合せからな
る圧電/電歪駆動部の少なくとも一つが、それら膜が順
次層状に積層せしめられて、形成されてなる構造を有す
る圧電/電歪膜型アクチュエータを、その特徴とするも
のである。
(Solution Means) In order to solve such problems, the present invention includes a first electrode film, a piezoelectric/electrostrictive film, and a second electrode film on at least one surface of a ceramic substrate. At least one of the piezoelectric/electrostrictive actuators consisting of a combination of the following is characterized by a piezoelectric/electrostrictive film type actuator having a structure in which these films are sequentially laminated in a layered manner.

(作用・効果) このような本発明に従う圧電/電歪膜型アクチュエータ
構造によれば、膜状の圧電/電歪体となるものであると
ころから、相対的に低駆動電圧にて大変位が得られ、ま
た応答速度が速く、且つ発生力も大きく、更には高集積
化が可能となる特徴を発揮するのである。つまり、膜を
基板上に層状に積み重ね、一体とした積層構造とするこ
とによって、従来のバルクを用いた積層型とやや類似し
た構造にも拘わらず、電界誘起歪みの横効果による大き
な屈曲変位が得られると共に、高応答速度と発生力大の
特徴を併わせ有する圧電/電歪膜型アクチュエータとな
るのである。
(Operation/Effect) According to the piezoelectric/electrostrictive film type actuator structure according to the present invention, since it is a film-like piezoelectric/electrostrictive body, large displacement can be achieved at a relatively low driving voltage. Furthermore, it exhibits characteristics such as fast response speed, large generated force, and furthermore, enables high integration. In other words, by stacking the films in layers on a substrate to create an integrated laminated structure, large bending displacements due to the lateral effect of electric field-induced strain can be avoided, despite the structure being somewhat similar to the conventional bulk laminated type. This results in a piezoelectric/electrostrictive film actuator that has the characteristics of high response speed and large generated force.

また、本発明は、基板と電極膜若しくは電極膜と圧電/
電歪膜を構成要件とするので、薄板を接合するような、
従来のユニモルフ型、バイモルフ型等のアクチュエータ
で採用されているような、所謂接着剤を用いることなく
一体化してなる圧電/電歪膜型アクチュエータのために
、長期使用に対する信頼性も高く、また変位量ドリフト
も小さい特徴を発揮するのである。
Further, the present invention provides a substrate and an electrode film, or a piezoelectric/electrode film and a piezoelectric/electrode film.
Since the electrostrictive film is a constituent element, it can be used to
Because the piezoelectric/electrostrictive film actuator is integrated without the use of so-called adhesives, as is used in conventional unimorph and bimorph actuators, it is highly reliable for long-term use, and has low displacement. It also exhibits the characteristic of small quantity drift.

さらに、本発明に従う圧電/電歪膜型アクチュエータは
、圧電/電歪駆動部が膜状に形成されるために、同一基
板面上に多数個の素子の形成が容易に出来、かかる圧電
/電歪駆動部の高集積化が可能となる特徴も有している
のである。
Furthermore, in the piezoelectric/electrostrictive film actuator according to the present invention, since the piezoelectric/electrostrictive driving section is formed in a film shape, it is possible to easily form a large number of elements on the same substrate surface. It also has the feature of allowing high integration of the strain drive section.

なお、本発明に従う圧電/電歪膜型アクチュエータでは
、低電圧駆動が可能で、しかも大きい屈曲変位・発生力
を得るために、有利には、その厚さが300μm以下、
好ましくは150μm以下とされ、また、そのとき使用
するセラミック基板の曲げ強度は、一般に、1200 
kgf /c角2以上、好ましくは1500 kgf 
/cm2以上の値となるように調整されることとなる。
In addition, in the piezoelectric/electrostrictive film type actuator according to the present invention, in order to be able to drive at low voltage and obtain large bending displacement and generated force, it is advantageous that the thickness is 300 μm or less,
It is preferably 150 μm or less, and the bending strength of the ceramic substrate used at that time is generally 1200 μm or less.
kgf/c angle 2 or more, preferably 1500 kgf
It will be adjusted to a value of /cm2 or more.

(具体的構成・実施例) 以下、本発明に従う圧電/電歪膜型アクチュエータの具
体的構造を示す図面を参照しつつ、本発明を、更に具体
的に明らかにすることとする。
(Specific Structure/Examples) The present invention will be explained in more detail below with reference to drawings showing a specific structure of a piezoelectric/electrostrictive film type actuator according to the present invention.

先ず、第1図は、セラミック基板の片面に圧電/電歪駆
動部が設けられてなる、本発明に従う圧電/電歪膜型ア
クチュエータの一例を示すものであって、セラミック基
板2の一方の面上に、下側電極膜4、圧電/電歪膜6及
び上側電極膜8が順次積層され、多層に形成された一体
構造とされている。なお、下側及び上側の電極膜4,8
は、それぞれ、圧電/電歪膜6の端部より延び出させら
れ、リード部4a、8aを形成しており、それらリード
部4a、8aを通じて、それぞれの電極膜4.8に通電
が行なわれるようになっている。
First, FIG. 1 shows an example of a piezoelectric/electrostrictive film type actuator according to the present invention in which a piezoelectric/electrostrictive driving section is provided on one side of a ceramic substrate 2. On top, a lower electrode film 4, a piezoelectric/electrostrictive film 6, and an upper electrode film 8 are sequentially laminated to form a multilayer integrated structure. Note that the lower and upper electrode films 4 and 8
are extended from the ends of the piezoelectric/electrostrictive film 6 to form lead portions 4a, 8a, and current is applied to the respective electrode films 4.8 through these lead portions 4a, 8a. It looks like this.

また、第2図は、セラミック基板の両面に圧電/電歪駆
動部が設けられた、本発明に従う圧電/電歪膜型アクチ
ュエータの一例を示すものであって、セラくツク基板2
のそれぞれの面に対して、下側電極膜4、圧電/電歪膜
6及び上側電極膜8が順次積層されて、熱処理により基
板2と圧電/電歪駆動部(4,6,,8)とが一体的な
構造として形成されている。
Further, FIG. 2 shows an example of a piezoelectric/electrostrictive film type actuator according to the present invention, in which piezoelectric/electrostrictive driving parts are provided on both sides of a ceramic substrate.
The lower electrode film 4, the piezoelectric/electrostrictive film 6, and the upper electrode film 8 are sequentially laminated on each surface of the substrate 2 and the piezoelectric/electrostrictive drive unit (4, 6, 8) by heat treatment. are formed as an integrated structure.

また、第3図〜第7図は、それぞれ、複数の圧電/電歪
駆動部がセラミック基板上に設けられてなる、本発明に
従うアクチュエータの異なる例を示すものであって、そ
れら複数の圧電/電歪駆動部は、積層形態において或い
は並設形態において、セラミック基板上に設けられてい
る。
Further, FIGS. 3 to 7 respectively show different examples of the actuator according to the present invention in which a plurality of piezoelectric/electrostrictive driving sections are provided on a ceramic substrate, and each of the plurality of piezoelectric/electrostrictive actuators is provided on a ceramic substrate. The electrostrictive drive unit is provided on the ceramic substrate in a stacked or side-by-side configuration.

例えば、第3図〜第5図に示される例においては、複数
の圧電/電歪駆動部(4,6,8)が、セラミック基I
tfi2上に並設形態において設けられており、特に、
第3図及び第4図に示されるアクチュエータにおいては
、それら複数の圧電/電歪駆動部(4,6,8)の間に
位置するセラミック基板2にスリン)10が入れられて
、それぞれの圧電/電歪駆動部が互いに独立した形態と
されている。また、第5図のアクチュエータにおいては
、セラミック基板2に長手の矩形孔12が所定ピッチで
設けられ、梯子状のセラミック基板2とされており、そ
してこの梯子状のセラミック基板2の矩形孔12.12
に挟まれた接続部2a上に、下側電極膜4と圧電/電歪
膜6と上側電極膜8とからなる圧電/電歪駆動部がそれ
ぞれ形成されている。なお、第3図において、14は、
圧電/電歪膜6の背部で、下側電極11g4と上側電極
膜8とを電気的に絶縁する絶縁膜である。
For example, in the examples shown in FIGS. 3 to 5, a plurality of piezoelectric/electrostrictive drive units (4, 6, 8)
provided in side-by-side form on tfi2, in particular:
In the actuator shown in FIGS. 3 and 4, a ceramic substrate 2 (surin) 10 is placed between the plurality of piezoelectric/electrostrictive actuators (4, 6, 8), and each piezoelectric /The electrostrictive drive sections are independent from each other. Further, in the actuator shown in FIG. 5, long rectangular holes 12 are provided in the ceramic substrate 2 at a predetermined pitch to form a ladder-shaped ceramic substrate 2, and the rectangular holes 12 of the ladder-shaped ceramic substrate 2. 12
A piezoelectric/electrostrictive driving section consisting of a lower electrode film 4, a piezoelectric/electrostrictive film 6, and an upper electrode film 8 is formed on the connecting portion 2a sandwiched between the two. In addition, in FIG. 3, 14 is
This is an insulating film that electrically insulates the lower electrode 11g4 and the upper electrode film 8 at the back of the piezoelectric/electrostrictive film 6.

また、第6図に示される本発明に従うアクチュエータは
、セラミック基板2上に、複数の圧電/電歪駆動部が積
層形態において設けられてなる構造の一例に係るもので
あって、そこでは、下側電極膜4と圧電/電歪膜6と上
側電極膜8とからなる圧電/電歪駆動部の二つが、セラ
ミック基板2上に二段重ね状態にて一体的に形成されて
なる構造とされている。なお、ここでは、上側電極膜8
が二つの圧電/電歪駆動部の共通の電極膜として利用さ
れている。
Further, the actuator according to the present invention shown in FIG. 6 is an example of a structure in which a plurality of piezoelectric/electrostrictive driving parts are provided in a stacked form on a ceramic substrate 2, and the actuator shown in FIG. Two piezoelectric/electrostrictive drive parts each consisting of a side electrode film 4, a piezoelectric/electrostrictive film 6, and an upper electrode film 8 are integrally formed in two stacked layers on a ceramic substrate 2. ing. Note that here, the upper electrode film 8
is used as a common electrode film for the two piezoelectric/electrostrictive drive units.

さらに、第7図に示される本発明に従う圧電/電歪膜型
アクチュエータの例においては、−枚の大きなセラミッ
ク基板2上に、下側電極膜4と圧電/電歪)I*6と上
側電極膜8とからなる圧電/電歪駆動部の複数が、所定
ピッチにて一体的に並設された構造において設けられて
いる。
Furthermore, in the example of the piezoelectric/electrostrictive film type actuator according to the present invention shown in FIG. A plurality of piezoelectric/electrostrictive driving parts each consisting of a membrane 8 are provided in a structure in which they are integrally arranged in parallel at a predetermined pitch.

そして、上記の如き本発明に従う構造の圧電/電歪膜型
アクチュエータにおいては、その下側電極膜4と上側電
極膜8との間に従来と同様にして通電が行なわれ、それ
によって圧電/電歪膜6に電界が作用せしめられると、
そのような電界に基づくところの圧電/電歪膜6の電界
誘起歪みが誘起され、以てその横効果により、セラξツ
ク基板2の板面に垂直な方向の屈曲変位乃至は発生力が
発現せしめられるのである。
In the piezoelectric/electrostrictive film type actuator having the structure according to the present invention as described above, current is applied between the lower electrode film 4 and the upper electrode film 8 in the same manner as in the conventional method, thereby causing piezoelectric/electrostrictive When an electric field is applied to the strained film 6,
Electric field-induced strain in the piezoelectric/electrostrictive film 6 based on such an electric field is induced, and due to its lateral effect, bending displacement or generated force in the direction perpendicular to the plate surface of the ceramic substrate 2 is expressed. They are forced to do so.

ところで、本発明に従う圧電/電歪脱型アクチュエータ
は、上記のように、振動板の如き作動板となるセラミッ
ク基板2上に、電極材料、圧電若しくは電歪材料及び電
極材料にて、それぞれの膜4.6.8が多層に形成され
た構造を有するものであって、熱処理によって、基板2
と圧電/電歪駆動部(下側電極膜4+圧電/電歪膜6+
上側電極膜8)とが一体構造を形成し、接着剤は何等用
いられていない特徴を有するものであるが、そのような
圧電/電歪脱型アクチュエータは、次のようにして作製
されることとなる。
By the way, in the piezoelectric/electrostrictive release actuator according to the present invention, as described above, each film is formed of an electrode material, a piezoelectric or electrostrictive material, and an electrode material on a ceramic substrate 2 that serves as an actuating plate such as a diaphragm. 4.6.8 has a multilayer structure, and the substrate 2 is heated by heat treatment.
and piezoelectric/electrostrictive drive unit (lower electrode film 4 + piezoelectric/electrostrictive film 6 +
The piezoelectric/electrostrictive release actuator is characterized in that it forms an integral structure with the upper electrode film 8) and does not use any adhesive, and can be manufactured as follows. becomes.

すなわち、先ず、各材料からなる膜4,6.8をセラミ
ック基板2上に形成するには、公知の各種の膜形成手法
が適宜に利用され、例えば、スクリーン印刷の如き厚膜
手法やディッピング等の塗布手法、スパッタリング、真
空蒸着、メツキ等の薄膜手法等が利用され、特に限定さ
れるもので羞よないが、圧電/電歪膜6を形成する時に
は、スクリーン印刷、ディッピング、塗布等による手法
が好適に採用される。これは、圧電/電歪セラミック粒
子を主成分とするペーストやスラリーを用いて基板上に
膜形成することが出来、良好なアクチュエータ特性が得
られるからである。また、そのような膜の形状は、スク
リーン印刷手法、フォトリソグラフィ手法等を用いて、
パターン形成する他、レーザー加工法やスライシング等
の機械加工法を用いて不必要な部分を除去して形成して
も良いが、その中でも、レーザー加工法や機械加工法を
用いて基板と膜を同時に加工し、圧電/電歪駆動部の集
積度を向上させることが好ましい。
That is, first, in order to form the films 4, 6.8 made of each material on the ceramic substrate 2, various known film forming methods are appropriately used, such as thick film methods such as screen printing, dipping, etc. When forming the piezoelectric/electrostrictive film 6, thin film methods such as sputtering, vacuum evaporation, plating, etc. are used, and there are no particular limitations, but when forming the piezoelectric/electrostrictive film 6, methods such as screen printing, dipping, coating, etc. are used. is preferably adopted. This is because a film can be formed on a substrate using a paste or slurry containing piezoelectric/electrostrictive ceramic particles as a main component, and good actuator characteristics can be obtained. In addition, the shape of such a film can be obtained by using screen printing methods, photolithography methods, etc.
In addition to forming a pattern, unnecessary parts may be removed using a machining method such as laser processing or slicing. It is preferable to process them simultaneously to improve the degree of integration of the piezoelectric/electrostrictive drive section.

また、作製されるアクチュエータの構造や膜の形状は、
特に規定される訳ではなく、用途に合わせて、如何なる
形状や構造であっても良く、例えば、三角形、四角形等
の多角形、円、楕円、円環等の円形、櫛状、格子状又は
それらを組み合わせた特殊形状であっても、何等差支え
ない。尤も、本発明の特徴を活かすためには、第3〜7
図に示されるような同一セラミック基板上に二つ以上の
圧電/電歪駆動部がS積された形状が有利に採用される
こととなる。特に、その中でも、第3〜4図や第5図に
示されるような櫛状等の形態のアクチュエータ構造の素
子が、圧電/電歪駆動部の集積度と変位、振動特性が好
ましく両立するために、望ましいものである。
In addition, the structure of the actuator and the shape of the membrane to be manufactured are
It is not particularly stipulated, and may have any shape or structure depending on the purpose, such as polygons such as triangles and quadrilaterals, circles such as circles, ellipses, and rings, comb shapes, lattice shapes, and the like. Even if it is a special shape that combines the following, there is no problem. However, in order to take advantage of the features of the present invention, it is necessary to
A configuration in which two or more piezoelectric/electrostrictive drive sections are stacked on the same ceramic substrate as shown in the figure is advantageously adopted. In particular, an element having a comb-shaped actuator structure as shown in FIGS. 3 to 4 and 5 is preferable because the piezoelectric/electrostrictive drive unit has good integration, displacement, and vibration characteristics. This is desirable.

なお、同一のセラミック基板上に多数の圧電/電歪駆動
部を集積した、本発明に従うアクチュエータにおいては
、かかる圧電/電歪駆動部が少なくとも3000μmピ
ッチよりも狭いピッチで設けられた、高い集積度を持つ
ことが好ましく、更には1000μmピッチよりも狭い
ピッチで、更に好ましくは500μmピッチよりも狭い
ピッチで、圧電/電歪駆動部を設けてなる、高い集積度
を有するアクチュエータとするのが望ましい。
In addition, in the actuator according to the present invention in which a large number of piezoelectric/electrostrictive actuators are integrated on the same ceramic substrate, the piezoelectric/electrostrictive actuators are provided at a pitch narrower than at least 3000 μm, resulting in a high degree of integration. It is preferable to provide an actuator with a high degree of integration, in which the piezoelectric/electrostrictive actuator is preferably provided with a pitch narrower than 1000 μm, more preferably narrower than 500 μm.

また、セラミック基板2上に上記の方法で形成されたそ
れぞれのM4.6.8は、その膜の形成の都度熱処理さ
れて、基板と一体構造となるようにされても良く、また
全層形成した後、同時に熱処理して、各層が同時に基板
に一体的に結合せしめられるようにしても良い。なお、
かかる形成された膜を基板と一体化するための熱処理温
度としては、一般に、800 ”C〜1400 ”C程
度の温度が採用され、好ましくは1100’C−140
0°Cの範囲の温度が有利に作用される。また、圧電/
電歪膜を熱処理する場合には、高温時に圧電/電歪膜の
組成が不安定とならないように、そのような圧電/電歪
材料の蒸発源と共に、雰囲気制御を行ないながら、熱処
理することが好ましい。更に、下側の電極膜は、一般に
、セラミック基板に直接に設けられることとなるが、そ
のような基板との接合性を向上させる目的で、基板と電
極膜との間に中間層膜を設けると好ましい場合もある。
Further, each M4.6.8 formed by the above method on the ceramic substrate 2 may be heat-treated each time the film is formed to have an integral structure with the substrate, or all layers may be formed. The layers may then be heat treated simultaneously so that each layer is integrally bonded to the substrate at the same time. In addition,
The heat treatment temperature for integrating the formed film with the substrate is generally about 800'C to 1400'C, preferably 1100'C to 140'C.
Temperatures in the range of 0° C. are used advantageously. In addition, piezoelectric/
When heat-treating an electrostrictive film, it is necessary to perform the heat treatment while controlling the atmosphere together with an evaporation source for the piezoelectric/electrostrictive material so that the composition of the piezoelectric/electrostrictive film does not become unstable at high temperatures. preferable. Furthermore, although the lower electrode film is generally provided directly on the ceramic substrate, an intermediate layer may be provided between the substrate and the electrode film for the purpose of improving bonding properties with such a substrate. In some cases, it is preferable.

なお、ここで言う接合性とは、接着性と熱膨張率の整合
性のことである。
Note that the term "bondability" as used herein refers to consistency between adhesiveness and coefficient of thermal expansion.

本発明に従うアクチュエータの作製に際して用いられる
セラミック基板2に関して、基板材料としては、機械的
強度が大きく、前記熱処理が可能な絶縁体若しくは誘電
体であれば、酸化物系であっても、非酸化物系であって
も良いが、その中でも、少なくとも、酸化アルミニウム
、酸化マグネシウム、酸化ジルコニウム、窒化アルミニ
ウム、窒化珪素の何れかを主成分とした材料を用いて形
成された基板が好ましく、特に酸化アルミニウム又は酸
化ジルコニウムを主成分とする基板が、板厚が薄くても
優れた基板特性が得られるところから、有利に用いられ
る。なお、そのようなセラミック基板材料中に含有され
る酸化珪素(Si○。
Regarding the ceramic substrate 2 used in manufacturing the actuator according to the present invention, as long as the substrate material is an insulator or dielectric material that has high mechanical strength and can be subjected to the above heat treatment, even if it is an oxide-based material, a non-oxide material can be used. Among them, a substrate formed using a material containing at least one of aluminum oxide, magnesium oxide, zirconium oxide, aluminum nitride, and silicon nitride as a main component is preferable, and particularly aluminum oxide or silicon nitride is preferable. A substrate containing zirconium oxide as a main component is advantageously used because excellent substrate characteristics can be obtained even if the plate thickness is thin. Note that silicon oxide (Si◯) contained in such a ceramic substrate material.

5iOz)の量は、10重量%以下が望ましく、特に3
重量%以下とすることが望ましい。このような酸化珪素
含有量の規制は、前述した圧電/電歪材料との熱処理中
の反応を避け、良好なアクチュエータ特性を得る上にお
いて、重要なことである。
The amount of 5iOz) is preferably 10% by weight or less, especially 3iOz).
It is desirable that the amount is less than % by weight. Such regulation of the silicon oxide content is important in order to avoid the aforementioned reaction with the piezoelectric/electrostrictive material during heat treatment and to obtain good actuator characteristics.

また、本発明に従う圧電/電歪膜型アクチュエータにお
いて、その高速応答性と大きな屈曲変位を得るために、
かかるセラミック基板2の厚さは、一般に、100μm
以下、好ましくは50μm以下、更に好ましくは30μ
m以下とすることが望ましく、またそのヤング率は、1
.5×106kg/cm”以上、4.5 X 106k
g/cm2以下、特に2.OX 106kg/ cm2
以上、4. OX 106kg/cm2以下であること
が、好ましい。更に、その曲げ強度としては、1200
 kgf 7cm2以上が好ましく、特に1500 k
gf 7cm2以上であることが望ましい。
Furthermore, in order to obtain high-speed response and large bending displacement in the piezoelectric/electrostrictive film actuator according to the present invention,
The thickness of such ceramic substrate 2 is generally 100 μm.
Below, preferably 50μm or less, more preferably 30μm
m or less, and its Young's modulus is 1
.. 5 x 106 kg/cm" or more, 4.5 x 106k
g/cm2 or less, especially 2. OX 106kg/cm2
Above, 4. It is preferable that OX is 106 kg/cm2 or less. Furthermore, its bending strength is 1200
kgf 7cm2 or more is preferable, especially 1500k
It is desirable that gf is 7 cm2 or more.

なお、かかるセラミック基板2としては、予め焼結した
基板を用いても良く、また基板材料のグリーンシートを
用い、前記の膜形成を行なった後に焼結させても良いが
、その中5では、予め焼結した基板が、素子の反りを小
さくすることが出来、またパターン寸法精度が得られる
ところから、有利に用いられることとなる。
Note that as the ceramic substrate 2, a pre-sintered substrate may be used, or a green sheet of the substrate material may be used and sintered after the above-mentioned film formation. A pre-sintered substrate is advantageously used because it can reduce the warpage of the device and provide pattern dimensional accuracy.

また、このようなセラミック基板2の基板形状は、特に
規定されるものではなく、用途に合わせて如何なる形状
でも採用可能であり、例えば三角形、四角形等の多角形
、円、楕円、円環等の円形、櫛状、格子状又はこれらを
組み合わせた特殊形状であっても、何等差支えない。
Further, the shape of the ceramic substrate 2 is not particularly specified, and any shape can be adopted depending on the purpose. For example, polygons such as triangles and quadrangles, circles, ellipses, rings, etc. A special shape such as a circle, a comb shape, a lattice shape, or a combination of these may be used.

次に、本発明に従う圧電/電歪膜型アクチュエータにお
ける電極膜4,8の材料としては、前記熱処理温度程度
の高温酸化雰囲気に耐えられる導体であれば、特に規制
されるものではなく、例えば金属単体でも、合金でも良
く、また絶縁性セラミックス等の添加物を加えた金属や
合金と絶縁セラミックスの混合物であっても良く、更に
は導電性セラミックスであっても何等差支えない。尤も
、その中でも、白金、パラジウム、ロジウム等の高融点
貴金属類、銀−パラジウム、讃−白金、白金パラジウム
等の合金を主成分とする電極材料が好適に用いられる。
Next, the material of the electrode films 4 and 8 in the piezoelectric/electrostrictive film actuator according to the present invention is not particularly limited as long as it is a conductor that can withstand a high-temperature oxidizing atmosphere similar to the heat treatment temperature, such as metal. It may be a single substance, an alloy, a mixture of a metal or an alloy with an additive such as an insulating ceramic, and an insulating ceramic, or even a conductive ceramic. Of course, among these, electrode materials whose main components are high-melting point noble metals such as platinum, palladium, and rhodium, and alloys such as silver-palladium, platinum-platinum, and platinum-palladium are preferably used.

また、上記混合物において、金属や合金に添加せしめら
れるセラミックスとしては、前記基板材料或いは後述す
る圧電/電歪材料と同じ材料であることが望ましく、そ
の添加量は、基板材料においては5〜30体積%程度、
また圧電/電歪材料においては5〜20体積%程度が好
ましい。特に、それら基板材料と圧電/電歪材料を共に
上記金属や合金に混在せしめてなる混合物が、目的とす
る電極膜の形成に有利に用いられる。これは、それら2
種の添加物を配合することにより、先に述べた中間層膜
と同様な効果が得られるからである。
In addition, in the above mixture, the ceramic added to the metal or alloy is preferably the same material as the substrate material or the piezoelectric/electrostrictive material described later, and the amount added is 5 to 30 vol. %degree,
In piezoelectric/electrostrictive materials, the content is preferably about 5 to 20% by volume. In particular, a mixture in which the substrate material and the piezoelectric/electrostrictive material are mixed together with the above metal or alloy is advantageously used for forming the intended electrode film. This is those 2
This is because by blending the seed additive, the same effect as the above-mentioned intermediate layer film can be obtained.

そして、このような電極膜材料を用いて形成される下側
電極膜4や上側電極膜8は、用途に応して適宜の厚さと
されることとなるが、−Cに、15μm以下、好ましく
は5μm以下の厚さにおいて形成されることとなる。
The lower electrode film 4 and upper electrode film 8 formed using such electrode film materials will have an appropriate thickness depending on the application, but −C is preferably 15 μm or less, and preferably 15 μm or less. will be formed to a thickness of 5 μm or less.

さらに、本発明に従う圧電/電歪膜型アクチュエータに
おいて、圧電/電歪駆動部を構成する圧電/電歪膜6は
、圧電或いは電歪効果等の電界講起歪みを示す材料であ
れば、何れの材料を用いても形成され得るものである。
Furthermore, in the piezoelectric/electrostrictive film actuator according to the present invention, the piezoelectric/electrostrictive film 6 constituting the piezoelectric/electrostrictive drive section may be made of any material that exhibits electric field induced distortion such as piezoelectric or electrostrictive effects. It can also be formed using the following materials.

また、そのような圧電/電歪膜材料は、結晶質の材料で
あっても、非晶質の材料であっても良く、また半導体で
あっても、誘電体セラミックス、強誘電体セラミックス
であっても良く、更には分極処理が必要な材料であって
も、不必要な材料であっても良いのである。
Further, such piezoelectric/electrostrictive film materials may be crystalline materials or amorphous materials, and may be semiconductors, dielectric ceramics, or ferroelectric ceramics. Furthermore, it may be a material that requires polarization treatment or a material that does not require polarization treatment.

尤も、本発明に用いられる圧電/電歪膜材料としては、
好ましくは、ジルコン酸チタン酸鉛(PZT系)を主成
分とする材料、マグネシウム三オブ酸鉛(PMN系)を
主成分とする材料、ニッケルニオブ酸鉛(PNN系〉を
主成分とする材料、マンガンニオブ酸鉛を主成分とする
材料、アンチモンスズ酸鉛を主成分とする材料、チタン
酸鉛を主成分とする材料、チタン酸バリウムを主成分と
する材料、更にはこれらの複合材料等が用いられる。な
お、PZT系を主成分とする材料に、ランタン、バリウ
ム、ニオブ、亜鉛、ニッケル、マンガン等の酸化物やそ
れらの他の化合物を添加物として含んだ材料、例えばP
LZT系となるように、前記材料に所定の添加物を適宜
に加えても何等差支えない。
Of course, the piezoelectric/electrostrictive film materials used in the present invention include:
Preferably, a material whose main component is lead zirconate titanate (PZT series), a material whose main component is lead magnesium triobate (PMN series), a material whose main component is lead nickel niobate (PNN series), Materials whose main ingredient is lead manganese niobate, materials whose main ingredient is lead antimony stannate, materials whose main ingredient is lead titanate, materials whose main ingredient is barium titanate, and even composite materials of these. In addition, materials containing oxides such as lanthanum, barium, niobium, zinc, nickel, manganese, and other compounds thereof as additives to materials whose main component is PZT, such as PZT-based materials, are used.
There is no problem in adding a predetermined additive to the material as appropriate so that the material becomes LZT-based.

そして、本発明に従う構造のアクチュエータにあっては
、アクチュエータ特性の点から、圧電定数でla3+1
が50 X 10−” (C/N)以上、中でも、10
0 X 10−” (C/N)以上である膜が、圧電/
電歪膜6として有利に用いられることとなるのである。
In the actuator having the structure according to the present invention, from the viewpoint of actuator characteristics, the piezoelectric constant is la3+1
is 50 x 10-” (C/N) or more, especially 10
0 x 10-” (C/N) or more is piezoelectric/
Therefore, it can be advantageously used as the electrostrictive film 6.

また、このような圧電/電歪膜6の厚さとしては、低電
圧で駆動できる様に、100μm以下、好ましくは50
μm以下、更に好ましくは30μm以下となるように選
定されるのである。
Further, the thickness of such a piezoelectric/electrostrictive film 6 is 100 μm or less, preferably 50 μm or less so that it can be driven at a low voltage.
The thickness is selected to be .mu.m or less, more preferably 30 .mu.m or less.

以上、本発明に従う圧電/電歪脱型アクチュエータにつ
いて、図面に示される具体例に基づき詳細に説明してき
たが、本発明が、そのような具体例によって何等の制約
をも受けるものでないことは、言うまでもないところで
ある。
The piezoelectric/electrostrictive release actuator according to the present invention has been described above in detail based on the specific examples shown in the drawings, but the present invention is not limited in any way by such specific examples. It goes without saying.

そして、本発明には、上記の具体的記述以外にも、本発
明の趣旨を逸脱しない限りにおいて、当業者の知識に基
づいて種々なる変更、修正、改良等を加え得るものであ
ることが、理解されるべきである。
In addition to the above-mentioned specific description, it is understood that various changes, modifications, improvements, etc. can be made to the present invention based on the knowledge of those skilled in the art, without departing from the spirit of the present invention. should be understood.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第7図は、それぞれ、本発明に従う圧電/電歪
脱型アクチュエータの異なる例を示す斜視部分説明図で
ある。 2:セラ逅ツク基板   4二下側電極膜6:圧電/電
歪膜    8:上側電極膜10ニスリツト     
12:矩形孔:絶縁膜
1 to 7 are perspective partial explanatory views showing different examples of piezoelectric/electrostrictive release actuators according to the present invention, respectively. 2: Ceramic substrate 42 Lower electrode film 6: Piezoelectric/electrostrictive film 8: Upper electrode film 10 Nislit
12: Rectangular hole: Insulating film

Claims (1)

【特許請求の範囲】 (1)セラミック基板の少なくとも一方の面上に、第一
の電極膜と圧電/電歪膜と第二の電極膜との組合せから
なる圧電/電歪駆動部の少なくとも一つが、それら膜が
順次層状に積層せしめられて、形成されてなる構造を有
する圧電/電歪膜型アクチュエータ。 (2)前記セラミック基板が、1.5×10^6kg/
cm^2以上、4.5×10^6kg/cm^2以下の
ヤング率を有する請求項(1)記載の圧電/電歪膜型ア
クチュエータ。 (3)前記アクチュエータの厚みが300μm以下であ
り、且つ前記セラミック基板の曲げ強度が1200kg
f/cm^2以上である請求項(1)記載の圧電/電歪
膜型アクチュエータ。 (4)前記セラミック基板が、少なくとも、酸化アルミ
ニウム、酸化マグネシウム、酸化ジルコニウム、窒化ア
ルミニウム、窒化珪素の何れかを主成分とする材料より
なることを特徴とする請求項(1)記載の圧電/電歪膜
型アクチュエータ。 (5)酸化珪素の含有量が10重量%以下であるセラミ
ック板状体が、前記セラミツク基板として用いられてい
る請求項(1)又は(4)記載の圧電/電歪膜型アクチ
ュエータ。(6)前記セラミック基板面上に、二つ以上
の圧電/電歪駆動部を、積層形態において若しくは並設
形態において設けた請求項(1)記載の圧電/電歪膜型
アクチュエータ。 (7)前記セラミック基板の板厚が、100μm以下で
ある請求項(1)又は(3)記載の圧電/電歪膜型アク
チュエータ。 (8)前記圧電/電歪膜の厚さが、100μm以下であ
る請求項(1)又は(7)記載の圧電/電歪膜型アクチ
ュエータ。
[Scope of Claims] (1) On at least one surface of the ceramic substrate, at least one of the piezoelectric/electrostrictive drive parts consisting of a combination of a first electrode film, a piezoelectric/electrostrictive film, and a second electrode film is disposed on at least one surface of the ceramic substrate. A piezoelectric/electrostrictive film actuator has a structure in which these films are sequentially laminated in a layered manner. (2) The ceramic substrate weighs 1.5 x 10^6 kg/
The piezoelectric/electrostrictive film actuator according to claim 1, which has a Young's modulus of not less than cm^2 and not more than 4.5 x 10^6 kg/cm^2. (3) The thickness of the actuator is 300 μm or less, and the bending strength of the ceramic substrate is 1200 kg.
The piezoelectric/electrostrictive film actuator according to claim 1, wherein the piezoelectric/electrostrictive film actuator has a f/cm^2 or more. (4) The piezoelectric/electroelectric material according to claim (1), wherein the ceramic substrate is made of a material containing at least one of aluminum oxide, magnesium oxide, zirconium oxide, aluminum nitride, and silicon nitride. Strain film actuator. (5) The piezoelectric/electrostrictive film actuator according to claim 1 or 4, wherein a ceramic plate having a silicon oxide content of 10% by weight or less is used as the ceramic substrate. (6) The piezoelectric/electrostrictive film type actuator according to claim 1, wherein two or more piezoelectric/electrostrictive actuators are provided on the surface of the ceramic substrate in a stacked form or in a juxtaposed form. (7) The piezoelectric/electrostrictive film actuator according to claim (1) or (3), wherein the ceramic substrate has a thickness of 100 μm or less. (8) The piezoelectric/electrostrictive film actuator according to claim 1 or (7), wherein the piezoelectric/electrostrictive film has a thickness of 100 μm or less.
JP2011174A 1989-07-11 1990-01-20 Piezoelectric / electrostrictive film type actuator Expired - Lifetime JP2842448B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE69026765T DE69026765T2 (en) 1989-07-11 1990-07-10 Piezoelectric / electrostrictive actuator containing a piezoelectric / electrostrictive film
SG9601033A SG83626A1 (en) 1989-07-11 1990-07-10 Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
EP90307520A EP0408306B1 (en) 1989-07-11 1990-07-10 Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
US08/384,469 US6441537B1 (en) 1989-07-11 1995-02-02 Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
US08/392,083 US5691593A (en) 1989-07-11 1995-02-22 Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
US08/452,092 US5622748A (en) 1989-07-11 1995-05-26 Method of fabricating a piezoelectric/electrostrictive actuator
HK24197A HK24197A (en) 1989-07-11 1997-02-27 Piezeoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film

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US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
US5475279A (en) * 1992-05-27 1995-12-12 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having integral ceramic base member and film-type piezoelectric/electrostrictive element (S)
EP0718900A2 (en) 1994-12-21 1996-06-26 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film element with a diaphragm having at least one stress releasing end section
US5600197A (en) * 1994-02-14 1997-02-04 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film element and method of producing the same
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US5670999A (en) * 1992-08-25 1997-09-23 Ngk, Insulators, Ltd. Ink jet print head having members with different coefficients of thermal expansion
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US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
US6290340B1 (en) 1992-05-19 2001-09-18 Seiko Epson Corporation Multi-layer ink jet print head and manufacturing method therefor
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