JPH03126312A - Surface acoustic wave rejector - Google Patents

Surface acoustic wave rejector

Info

Publication number
JPH03126312A
JPH03126312A JP26555889A JP26555889A JPH03126312A JP H03126312 A JPH03126312 A JP H03126312A JP 26555889 A JP26555889 A JP 26555889A JP 26555889 A JP26555889 A JP 26555889A JP H03126312 A JPH03126312 A JP H03126312A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
resistor
piezoelectric substrate
wave resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26555889A
Other languages
Japanese (ja)
Inventor
Taiji Yamamoto
泰司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP26555889A priority Critical patent/JPH03126312A/en
Publication of JPH03126312A publication Critical patent/JPH03126312A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To miniaturize the size of the device small and to facilitate the adjustment of attenuation by arranging a resistor connected between an input terminal and an output terminal onto a same piezoelectric substrate as a 2-port surface acoustic wave resonator after applying circuit integration to the resistor. CONSTITUTION:A resistive element 16 is formed on a same piezoelectric substrate 11 provided with a lateral mode resonance 2-port surface acoustic wave resonator comprising interdigital electrodes 12, 13 and reflectors 14, 15. The resistive element 16 is a resistor of meander line state metallic thin film such as an aluminum thin film forming a surface acoustic wave element or a resistor made of a carbon by sputtering or the like. Then the resistance adjustment during the assembling of a surface acoustic wave rejecter is implemented by the laser trimming technology. Since the resistive element is formed on the same piezoelectric substrate as the surface acoustic wave resonator, the device is made remarkably small and the resistance is easily adjusted.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は弾性表面波共振子を用いたりジェツタに関し、
特に外部素子の一体化構造に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a jetter using a surface acoustic wave resonator,
In particular, it relates to an integrated structure of external elements.

〔従来の技術〕[Conventional technology]

従来、この種のりジェツタは、第3図に示すよう番こ、
2ポート弾性表面波共振子が、圧電基板11上に、入力
用交差指状電極12、出力用交差指状電極13を設け、
これら電極12.13の両側に反射器14.15を設け
、さらに電極12.13の一端に設置端子19を接続し
ている。また、電極12.13の他端が外部の入力端子
17′および・出力端子18′に接続され、入出力端子
17’、18’間に抵抗16′を外部で接続することで
、ディスクリートに構成していた。
Conventionally, this kind of glue jetter has been equipped with a guard, as shown in Fig. 3.
A two-port surface acoustic wave resonator is provided with an input interdigital electrode 12 and an output interdigital electrode 13 on a piezoelectric substrate 11,
Reflectors 14.15 are provided on both sides of these electrodes 12.13, and an installation terminal 19 is connected to one end of the electrodes 12.13. In addition, the other ends of the electrodes 12.13 are connected to external input terminals 17' and output terminals 18', and a resistor 16' is connected externally between the input and output terminals 17' and 18' to form a discrete configuration. Was.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の弾性表面波リジェクタは、2ポート弾性
表面波共振子と外部接続の抵抗素子16′とで構成する
ため、実装形状が大きくなり、また、リジェクタの減衰
量の調整のため抵抗値を変化させる必要があるなどの欠
点があった。
The conventional surface acoustic wave rejector described above is composed of a two-port surface acoustic wave resonator and an externally connected resistance element 16', so the mounting shape is large and the resistance value has to be adjusted to adjust the attenuation amount of the rejector. There were drawbacks such as the need for changes.

本発明の目的は、このような欠点を除き、装置を小型化
すると共に、減衰量調整を容易にした弾性表面波リジェ
クタを提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate such drawbacks, reduce the size of the device, and provide a surface acoustic wave rejector that facilitates adjustment of the amount of attenuation.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の構成は、圧電基板上に、入力用交差指状電極と
出力用交差指状電極とを接続しな2ポート弾性表面波共
振子と、この2ポート弾性表面波共振子の入力端子と出
力端子間に接続された抵抗とを配設した弾性表面波リジ
ェクタにおいて、前記抵抗が前記2ポ一ト弾性表面波共
振子と同一圧電基板上に集積化して配設されたことを特
徴とする。
The configuration of the present invention includes a two-port surface acoustic wave resonator on a piezoelectric substrate, in which interdigital electrodes for input and interdigital electrodes for output are connected, and an input terminal of the two-port surface acoustic wave resonator. A surface acoustic wave rejector including a resistor connected between output terminals, characterized in that the resistor is integrated and disposed on the same piezoelectric substrate as the two-point surface acoustic wave resonator. .

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の模式的平面図である。交差
指状電極12.13と反射器14.15とからなる横モ
ード共振型2ボート弾性表面波共振子を設けた同一圧電
基板上11に抵抗素子16が形成されている。この抵抗
素子16は、従来の弾性表面波素子を形成するアルミ薄
膜などの金属薄膜をメアンダライン状にした抵抗やカー
ボンなどをスパッタなどで形成した抵抗などにより形成
できる。
FIG. 1 is a schematic plan view of an embodiment of the present invention. A resistive element 16 is formed on the same piezoelectric substrate 11 on which a transverse mode resonant two-boat surface acoustic wave resonator consisting of interdigital electrodes 12.13 and reflectors 14.15 is provided. The resistive element 16 can be formed of a resistor formed by forming a meander line of a metal thin film such as an aluminum thin film that forms a conventional surface acoustic wave element, or a resistor formed by sputtering carbon or the like.

第2図は本発明の第2の実施例の模式的平面図である。FIG. 2 is a schematic plan view of a second embodiment of the invention.

本実施例は、2ポ一ト弾性表面波共振子が、第1図のよ
うな縦モード共振型でなく横モード共振型を構成する交
差指状電極22.23とその反射器24.25とから形
成されているが、第1図と同様に、抵抗16を圧電基板
11上に設けた構成が可能である。
In this embodiment, a two-point surface acoustic wave resonator has interdigital electrodes 22, 23 and their reflectors 24, 25, which constitute a transverse mode resonance type rather than a longitudinal mode resonance type as shown in FIG. However, a configuration in which the resistor 16 is provided on the piezoelectric substrate 11 as in FIG. 1 is also possible.

なお弾性表面波リジェクタのアセンブリ中の抵抗調整は
、すでにHICなどで実施されているレーザートリミン
グ技術を用いれば、容易に可能となる。
Note that resistance adjustment during assembly of the surface acoustic wave rejector can be easily achieved by using laser trimming technology that has already been implemented in HIC and the like.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、従来外付けし゛ていた抵
抗素子を弾性表面波共振子と同一圧電基板上に形成する
ことにより、装置の大幅な小型化が可能となる。さらに
、従来アセンブル後に必要としていた抵抗値の調整は弾
性表面波リジェクタのアセンブリ中の調整により、客先
での調整を全く不要とすることができ、またリジェクタ
として固体化が可能となる。
As explained above, according to the present invention, by forming the resistive element, which was conventionally attached externally, on the same piezoelectric substrate as the surface acoustic wave resonator, it is possible to significantly downsize the device. Furthermore, the adjustment of the resistance value, which was conventionally required after assembly, can be done during the assembly of the surface acoustic wave rejector, eliminating the need for any adjustment at the customer's site, and also making it possible to solidify the rejector.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の弾性表面波リジェクタの一実施例の模
式的平面図、第2図は本発明の他の実施例の模式的平面
図、第3図は従来の弾性表面波リジェクタの一例の模式
的平面図である。 11・・・圧電基板、12.13,22.23・・・交
差指状電極14,15.24.25・・・反射器、16
.16’・・・抵抗素子、17.17’・・・入力端子
、18.18’・・・出力端子。
FIG. 1 is a schematic plan view of one embodiment of the surface acoustic wave rejector of the present invention, FIG. 2 is a schematic plan view of another embodiment of the present invention, and FIG. 3 is an example of a conventional surface acoustic wave rejector. FIG. 11... Piezoelectric substrate, 12.13, 22.23... Interdigital electrodes 14, 15.24.25... Reflector, 16
.. 16'...Resistance element, 17.17'...Input terminal, 18.18'...Output terminal.

Claims (1)

【特許請求の範囲】[Claims]  圧電基板上に、入力用交差指状電極と出力用交差指状
電極とを接続した2ポート弾性表面波共振子と、この2
ポート弾性表面波共振子の入力端子と出力端子間に接続
された抵抗とを配設した弾性表面波リジェクタにおいて
、前記抵抗が前記2ポート弾性表面波共振子と同一圧電
基板上に集積化して配設されたことを特徴とする弾性表
面波リジェクタ。
A two-port surface acoustic wave resonator in which input interdigital electrodes and output interdigital electrodes are connected on a piezoelectric substrate;
In a surface acoustic wave rejector including a resistor connected between an input terminal and an output terminal of a port surface acoustic wave resonator, the resistor is integrated and arranged on the same piezoelectric substrate as the two-port surface acoustic wave resonator. A surface acoustic wave rejector characterized by:
JP26555889A 1989-10-11 1989-10-11 Surface acoustic wave rejector Pending JPH03126312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26555889A JPH03126312A (en) 1989-10-11 1989-10-11 Surface acoustic wave rejector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26555889A JPH03126312A (en) 1989-10-11 1989-10-11 Surface acoustic wave rejector

Publications (1)

Publication Number Publication Date
JPH03126312A true JPH03126312A (en) 1991-05-29

Family

ID=17418780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26555889A Pending JPH03126312A (en) 1989-10-11 1989-10-11 Surface acoustic wave rejector

Country Status (1)

Country Link
JP (1) JPH03126312A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117375573A (en) * 2023-12-07 2024-01-09 华南理工大学 Reflection-free acoustic wave filter unit, reflection-free acoustic wave filter and manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117375573A (en) * 2023-12-07 2024-01-09 华南理工大学 Reflection-free acoustic wave filter unit, reflection-free acoustic wave filter and manufacturing method
CN117375573B (en) * 2023-12-07 2024-04-12 华南理工大学 Reflection-free acoustic wave filter unit, reflection-free acoustic wave filter and manufacturing method

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