JPH03123868A - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JPH03123868A JPH03123868A JP1262017A JP26201789A JPH03123868A JP H03123868 A JPH03123868 A JP H03123868A JP 1262017 A JP1262017 A JP 1262017A JP 26201789 A JP26201789 A JP 26201789A JP H03123868 A JPH03123868 A JP H03123868A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- blow
- acceleration sensor
- hole
- film part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000001133 acceleration Effects 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 8
- 238000013016 damping Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000001020 plasma etching Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、自動車等の移動体に係り、特に車体制御等に
好適な加速度センサに関するものであるが、その中の半
導体方式に係る構成に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a moving body such as an automobile, and particularly relates to an acceleration sensor suitable for controlling a vehicle body, etc., and relates to a structure related to a semiconductor method therein. It is something.
従来の加速度センサは、特開昭６１−９７５７２号に記
載のように薄膜部（ダイヤフラム部）をゲージ端部のみ
を残して切り抜き、カンチレバー形状にすることにより
加振部を形成していた。これらはカンチレバ一部が強振
幅時はゲージ端部が破損する可能性があるため上下にス
トッパーを設けたり、ダンパーオイルを注入することに
より、これらの動きを制御しており、ストッパーやダン
パーオイルの除外については配慮されていなかった。In a conventional acceleration sensor, as described in Japanese Patent Application Laid-Open No. 61-97572, a vibrating part is formed by cutting out a thin film part (diaphragm part) leaving only the gauge end part and making it into a cantilever shape. These movements are controlled by installing stoppers at the top and bottom of the cantilever and injecting damper oil, since the gauge end may be damaged when part of the cantilever is in strong amplitude. No consideration was given to exclusion.
上記従来技術はスｌ−ツバ−やダンパーオイルの除外の
点については配慮されておらず、量産時の組立における
複雑さやカンチレバーのゲージ部等の破損については問
題があった。The above-mentioned prior art does not take into consideration the exclusion of the sl-bar and damper oil, and there are problems with the complexity of assembly during mass production and damage to the gauge portion of the cantilever.
本発明の目的はカンチレバー状に切はなさずにダイヤフ
ラム部を重り部と共に形成し、その中に任意の大きさと
形状の吹抜け穴を設けることにより出力感度を確保する
こととダイヤフラム部の制御が容易になることを目的と
している。The purpose of the present invention is to form a diaphragm part together with a weight part without cutting it into a cantilever shape, and to provide a blow-through hole of any size and shape in the diaphragm part, thereby ensuring output sensitivity and making it easy to control the diaphragm part. It aims to become.
上記目的は半導体基板のダイヤフラム部吹抜け穴を複数
個配置することによりカンチレバーに近い出力を得ると
共に、その加工方法は通常のドライエツチング（ＲＩ
Ｅ−リアクティブイオンエツチングに代表されもの）で
は配線やパンシベーションの５ｉＯｚ膜に損侶を与える
等で一部試作は可能であるが量産時の歩留りが大幅に悪
いので大変である。The above purpose is to obtain an output similar to that of a cantilever by arranging multiple through holes in the diaphragm part of the semiconductor substrate, and the processing method is the usual dry etching (RI).
E-reactive ion etching (as typified by E-reactive ion etching) damages the 5iOz film for wiring and pansivation, and although it is possible to make some prototypes, it is difficult because the yield during mass production is significantly low.
この加工をマイクロ波プラズマエツチングにて行うこと
によりＳ ｉ ／ Ｓ ｉ○２の選択比が１００以上で
あり、イオンよりもラジカル成分にてＳｉの吹抜け穴を
加工することにより達成される。By performing this processing by microwave plasma etching, the selectivity ratio of Si/Si○2 is 100 or more, which is achieved by processing the Si open hole using a radical component rather than an ion.
本発明の半導体加速度センサは薄膜部に設けた重り部が
加速されることによって加振されることで半導体のピエ
ゾ抵抗効果により抵抗変化するのを半導体基体表面に配
置したパターンのゲージ抵抗の変化としてとらえるもの
である。この時、薄膜部（ダイヤフラム部）に設けた重
り部がスムースに動くように吹抜け穴を薄膜部に設けて
出力感度を容易に得られるようにするものである。In the semiconductor acceleration sensor of the present invention, when a weight section provided on a thin film section is accelerated and vibrated, resistance changes due to the piezoresistance effect of the semiconductor are detected as changes in the gauge resistance of a pattern arranged on the surface of the semiconductor substrate. It is something that can be grasped. At this time, a blow-through hole is provided in the thin film part (diaphragm part) so that the weight part provided in the thin film part (diaphragm part) moves smoothly, so that output sensitivity can be easily obtained.
これらの吹抜け穴とマイクロ波プラズマエツチングによ
り加工することにより、半導体基体主表面［こ配置した
パターンに損傷を与えず、精度よく加工出来ることによ
り、歩留りと品質の向上を計ることが出来るものである
。By processing these open holes and using microwave plasma etching, the main surface of the semiconductor substrate can be processed with high precision without damaging the patterns placed on it, thereby improving yield and quality. .
更に容量式においても同様にダイヤフラム部に相当する
薄膜部に吹抜け穴を設けることにより。Furthermore, in the capacitive type, by providing a blow-through hole in the thin film part corresponding to the diaphragm part.
エア・ダンピング効果で重り部がスムースに動き感度の
確保が出来るものである。The air damping effect allows the weight to move smoothly and ensure sensitivity.
第１図は本発明の一実施例を示している。 FIG. 1 shows an embodiment of the invention.
第１図で第２図以降に示したものと同一物、相当物には
同一符号を付けている。Components in FIG. 1 that are the same as those shown in FIG. 2 and subsequent figures are given the same reference numerals.
第２図は第１図のｘ−ｘ’部の断面を示し、第３図は同
様に第１図のＸｉ Ｘｔ’部の断面を示している。2 shows a cross section taken along the line xx' in FIG. 1, and FIG. 3 similarly shows a cross section taken along the line Xi Xt' in FIG.
第１図はＳｉチップ（通常Ｎタイプ結晶面（１００＞
）にピエゾ抵抗検出用のパターン部３を配置したもので
、第１図の実施例ではゲージ部７を４個配置してブリッ
ヂに組んだ回路の例となっている。Figure 1 shows a Si chip (usually N-type crystal plane (100>
), and the pattern section 3 for piezoresistance detection is arranged in the circuit.The embodiment shown in FIG. 1 is an example of a circuit in which four gauge sections 7 are arranged and assembled into a bridge.
第２図に第１図のｘ−ｘ’部の断面を示すが、薄膜部５
の中央に重り部４を設けて、加速による振動を薄膜部５
に伝え易くするものである。更に振動を容易にするため
に第１図の吹抜け穴２を設けることによりエア・ダンピ
ング効果が付加され更に容易になる様にしたものである
。これは第１図のＸｌ−Ｘｔ’ を断面にした第３図に
示すごとく。FIG. 2 shows a cross section taken along line xx' in FIG.
A weight part 4 is provided in the center of the thin film part 5 to absorb vibrations caused by acceleration.
This is to make it easier to communicate. Furthermore, in order to facilitate vibration, the air damping effect is added by providing the blow-through hole 2 shown in FIG. 1, thereby making the vibration even easier. This is shown in FIG. 3, which is a cross section taken along line Xl-Xt' in FIG.
ゲージ部７の薄膜部５の部分が薄くなり、出力感度が得
られ易くすることと、吹抜け穴２より振動による空気の
出入りが容易になり更に感度が得られ易くなるものであ
る。これは第４図にこのＳｉチップ（半導体基体）１が
ガラスダイ９と組立てられた図を示したものであるが、
ウェットエツチング等により食刻された食刻領域８は吹
抜け穴２が無い場合はこの中の空気がダンパーとなって
動くので、吹抜け穴２によって動きをスムースにし、そ
の影響を無くするものである。The thin film part 5 of the gauge part 7 is made thinner, making it easier to obtain output sensitivity, and the blow-through hole 2 makes it easier for air to enter and exit due to vibrations, making it easier to obtain sensitivity. This is shown in FIG. 4, where this Si chip (semiconductor substrate) 1 is assembled with a glass die 9.
If the etched area 8 etched by wet etching or the like does not have the blow-through hole 2, the air therein acts as a damper and moves, so the blow-through hole 2 smoothes the movement and eliminates the influence.
尚、第４図に示した組立てはＳｉチップ１とガラスダイ
９はアノ−デイックボンディング等の精度の高い接合方
法によって接合されているものとするものである。In the assembly shown in FIG. 4, it is assumed that the Si chip 1 and the glass die 9 are bonded by a highly precise bonding method such as anodic bonding.
ゲージ部の配置は４個をブリッヂに配置する例を第１図
に示したが、これらは１ケ所又は２ケ所等でも可能性が
ある。更に吹抜け穴２は２ケ所のゲージ部７に２ケ所の
吹抜け穴２で両側からはさんで配置しであるが、他の配
置のゲージ部７を用いても良いことは明白である。FIG. 1 shows an example in which four gauge parts are arranged on the bridge, but it is also possible to arrange them in one or two places. Furthermore, although the blow-through holes 2 are arranged between the two gauge portions 7 and sandwiched from both sides by the two blow-through holes 2, it is obvious that the gauge portions 7 in other arrangements may be used.
第５図は特開昭６１−９７５７２号及び実開昭６１−５
７８６５号公報に示されたもので、カンチレバ一方式の
ものを示した。これらはＳｉチップ１にゲージ部７等を
配置して、切抜き部１１によって切抜かれた部分がカン
チレバ一部１０（この部が重り部４と同様になっている
。）を形成しているものである。Figure 5 shows Japanese Patent Application Publication No. 61-97572 and Utility Model Application No. 61-5.
This is disclosed in Japanese Patent No. 7865, and shows a single cantilever type. These have a gauge part 7 and the like arranged on a Si chip 1, and the part cut out by a cutout part 11 forms a cantilever part 10 (this part is similar to the weight part 4). be.
この構造ではカンチレバ一部１０が強振時に上下に振れ
て当り、ゲージ部７の薄膜が破損の可能性が高いため上
下にストッパーを設けて、これを制限しなければならな
い。ストッパーを設けてもカンチレバ一部１０は設けた
ストッパーに強く当るため更にダンパーオイル等をＳｉ
チップ１全体を密閉構造にして注入等で封鎖しなければ
ならないので構造が複雑となることは必至である。In this structure, the cantilever part 10 swings up and down during strong vibrations, and there is a high possibility that the thin film of the gauge part 7 will be damaged, so stoppers must be provided at the top and bottom to restrict this. Even if a stopper is provided, the cantilever part 10 strongly hits the provided stopper, so damper oil etc. are further applied to Si.
Since the entire chip 1 must be made into a hermetically sealed structure and sealed by injection or the like, the structure is inevitably complicated.
第７図は第１図に示した吹抜け穴２の配置を各ゲージ部
７の中間に配置した例である。第８図はその断面を示し
たものである。当然のことながら第７図及び第８図に示
したごとく、第１図の検出回路だけでなく、第７図のご
とく、増幅部や温度等の補正部をＳｉチップ１のとなり
に示す集積部１２のように配置しても良く、同様にＳｉ
チップ１の周囲に構成しても可能なことは当然である。FIG. 7 shows an example in which the blow-through hole 2 shown in FIG. 1 is arranged in the middle of each gauge part 7. FIG. 8 shows its cross section. Naturally, as shown in FIGS. 7 and 8, there is an integrated section that includes not only the detection circuit shown in FIG. 12 may be arranged, and similarly Si
Of course, it is also possible to configure it around the chip 1.
尚、第１図及び第７図の例で示した食刻領域８は環状の
ものである。The etched area 8 shown in the examples of FIGS. 1 and 7 is annular.
第９図は容量式加速度センサに適用した実施例を示す。FIG. 9 shows an embodiment applied to a capacitive acceleration sensor.
第１図のパターン部３が無いもので、第１図と同様に吹
抜け穴２によってエア・ダンパーとして働き、第１０図
に示した容量検出ギャップ１３の変化による容量の変化
ががスムースに動作するものである。第１０図（イ）は
第９図のＡ−Ａ′断面を示し、薄膜部５′が第１図の薄
膜部５と同じ様に振動、変化するものである６第１０図
（ロ）は第９図のＢ−Ｂ’断面を示し、本発明の吹抜け
穴２を設けた構成を示したものである。It does not have the pattern part 3 shown in Fig. 1, and the open hole 2 acts as an air damper as in Fig. 1, and the capacitance changes smoothly due to the change in the capacitance detection gap 13 shown in Fig. 10. It is something. Figure 10 (a) shows the cross section AA' in Figure 9, and the thin film part 5' vibrates and changes in the same way as the thin film part 5 in Figure 1.6 Figure 10 (b) shows the This is a cross section taken along the line BB' in FIG. 9, and shows a configuration in which the blow-through hole 2 of the present invention is provided.
本実施例によれば、ストッパーを設けることもなく、又
、ダンパーオイルの注入の要もなくして高精度、高品質
にて製造することが出来、更に安価で歩留りの良い半導
体加速度センサを提供出来る効果がある。According to this embodiment, it is possible to manufacture a semiconductor acceleration sensor with high precision and high quality without providing a stopper or injecting damper oil, and it is possible to provide a semiconductor acceleration sensor at a low cost and with a high yield. effective.
以上説明したように、本発明によれば製造が容易で、か
つ制御精度の優れた半導体加速度センサを得ることが出
来る。As described above, according to the present invention, it is possible to obtain a semiconductor acceleration sensor that is easy to manufacture and has excellent control accuracy.
【図面の簡単な説明】
第１図は本発明の一実施例を示す半導体加速度センサを
示す図、第２図はｘ−ｘ’断面図、第３図はＸｌ−ＸＩ
’断面図、第４図は部分断面図、第５図は従来のカンチ
レバーによる加速度センサの実施例を示す図、第６図は
その断面図、第７図は本発明の更に他の実施例を示す図
、第８図はその断面図、第９図は容量式の実施例を示す
図、第１０図（イ）はＡ−Ａ’断面図、（ロ）はＢ−Ｂ
’断面図である。
１・・・Ｓｉチップ（半導体基板）、２・・・吹抜け穴
、３・・・パターン部、４・・・重り部、５・・・薄膜
部、５′・・薄膜部、６・・・Ｓｉチップ断面、７・・
・ゲージ部、８・・・食刻領域、９・・・ガラスダイ、
１０・・・カンチレバ一部、１１・・・切抜き部、１−
２・・・集積部、１３・・・容量検出ギャップ。
１λ
第
口
尾′７図
嶌
凹
馬６図
（牛）
寓ｑ図
市１０図
牛
巳[Brief Description of the Drawings] Fig. 1 is a diagram showing a semiconductor acceleration sensor according to an embodiment of the present invention, Fig. 2 is a sectional view taken along the line x-x', and Fig. 3 is a cross-sectional view taken along the line Xl-XI.
4 is a partial sectional view, FIG. 5 is a diagram showing an embodiment of a conventional cantilever-based acceleration sensor, FIG. 6 is a sectional view thereof, and FIG. 7 is a diagram showing still another embodiment of the present invention. 8 is a sectional view, FIG. 9 is a diagram showing a capacitive type embodiment, FIG.
'This is a cross-sectional view. DESCRIPTION OF SYMBOLS 1... Si chip (semiconductor substrate), 2... Open hole, 3... Pattern part, 4... Weight part, 5... Thin film part, 5'... Thin film part, 6... Si chip cross section, 7...
・Gauge part, 8... Etching area, 9... Glass die,
10... Cantilever part, 11... Cutout part, 1-
2...Integration section, 13...Capacitance detection gap. 1λ 1st Mouth & Tail '7 Figure 6 Shimakouma (Cow) Figure q City Figure 10 Ushimi
Claims (1)
裏面より食刻領域が設けられて薄膜を形成し、その薄膜
部に重り部を設けたセンサにおいて、その薄膜部（ダイ
ヤフラム部）に吹抜け穴を設け、吹抜け穴の配置を検出
パターンのゲージの両側に配置することを特徴とする半
導体加速度センサ。 ２、特許請求の範囲項１項において吹抜け穴を複数個の
配置をすることを特徴とする半導体加速度センサ。 ３、特許請求の範囲第１項において検出パターンを設け
ない容量式において、ダイヤフラム部の上下面にギャッ
プ（容量形成）を形成した構造においても当該ダイヤフ
ラム部に吹抜け穴を設けたことを特徴とする半導体加速
度センサ。 ４、特許請求の範囲第１項において、検出パターンの梁
構造とは区分して、エア・ダンピングを主体に吹抜け穴
を設けることを特徴とした半導体加速度センサ。 ５、特許請求の範囲第１項において、吹抜け穴の大きさ
、数量配置を変えて吹き抜け条件を変えることを特徴と
する半導体加速度センサ。 ６、特許請求の範囲第３項において、吹抜け穴の大きさ
、数量、配置を変えて抜き抜け条件を変えることを特徴
とする半導体加速度センサ。[Claims] 1. A semiconductor substrate has a detection pattern on its main surface,
In a sensor in which an etched area is provided from the back side to form a thin film, and a weight part is provided on the thin film part, a blow-through hole is provided in the thin film part (diaphragm part), and the placement of the blow-through hole is set on both sides of the gauge of the detection pattern. A semiconductor acceleration sensor characterized in that it is arranged in. 2. A semiconductor acceleration sensor according to claim 1, characterized in that a plurality of blowholes are arranged. 3. In the capacitive type without a detection pattern in claim 1, even in a structure in which a gap (capacitance formation) is formed on the upper and lower surfaces of the diaphragm part, a blow-through hole is provided in the diaphragm part. Semiconductor acceleration sensor. 4. A semiconductor acceleration sensor according to claim 1, characterized in that a blow-through hole is provided mainly for air damping, separated from the beam structure of the detection pattern. 5. The semiconductor acceleration sensor according to claim 1, characterized in that the size and quantity arrangement of the blow-through holes are changed to change the blow-through conditions. 6. The semiconductor acceleration sensor according to claim 3, characterized in that the size, number, and arrangement of the blow-through holes are changed to change the blow-through conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262017A JPH03123868A (en) | 1989-10-09 | 1989-10-09 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1262017A JPH03123868A (en) | 1989-10-09 | 1989-10-09 | Semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03123868A true JPH03123868A (en) | 1991-05-27 |
Family
ID=17369862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1262017A Pending JPH03123868A (en) | 1989-10-09 | 1989-10-09 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03123868A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008147441A (en) * | 2006-12-11 | 2008-06-26 | Rohm Co Ltd | Semiconductor device |
| US8776602B2 (en) | 2006-08-11 | 2014-07-15 | Rohm Co., Ltd. | Acceleration sensor, semiconductor device and method of manufacturing semiconductor device |
-
1989
- 1989-10-09 JP JP1262017A patent/JPH03123868A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8776602B2 (en) | 2006-08-11 | 2014-07-15 | Rohm Co., Ltd. | Acceleration sensor, semiconductor device and method of manufacturing semiconductor device |
| JP2008147441A (en) * | 2006-12-11 | 2008-06-26 | Rohm Co Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7468552B2 (en) | Physical quantity sensor | |
| US7302847B2 (en) | Physical quantity sensor having movable portion | |
| US20060237806A1 (en) | Micromachined microphone and multisensor and method for producing same | |
| US7178400B2 (en) | Physical quantity sensor having multiple through holes | |
| DE102014116129A1 (en) | System and method for a MEMS converter | |
| US6125700A (en) | Vibrating type angular velocity sensor | |
| CA2471809A1 (en) | Semiconductor acceleration sensor and method of manufacturing the same | |
| US6928873B2 (en) | Silicon dual inertial sensors | |
| US8129801B2 (en) | Discrete stress isolator attachment structures for MEMS sensor packages | |
| CN110023233A (en) | For the vertical plug with cap MEMS device | |
| KR20070093807A (en) | The structure of acceleration sensor and method for manufacturing thereof | |
| JP3666370B2 (en) | External force detection sensor | |
| EP2173114A1 (en) | Diaphragm structure and acoustic sensor | |
| US7337666B2 (en) | Movable sensor device | |
| US7487678B2 (en) | Z offset MEMS devices and methods | |
| JPH03123868A (en) | Semiconductor acceleration sensor | |
| KR101454123B1 (en) | Acceleration Sensor | |
| JPH09171033A (en) | Acceleration sensor | |
| WO2017033717A1 (en) | Composite sensor | |
| EP4181534A1 (en) | Directional acoustic sensor | |
| JP4525452B2 (en) | Multi-axis acceleration sensor | |
| JP3597806B2 (en) | Microstructure having movable structure and method of manufacturing the same | |
| US20150198626A1 (en) | Acceleration sensor | |
| US20050205949A1 (en) | Semiconductor device having moving part | |
| JPH05256869A (en) | Semiconductor type acceleration sensor and its manufacture |