JPH03120905A - High frequency high output hybrid integrated circuit - Google Patents

Abstract

PURPOSE:To attain the control with an active element of small power and small current capacity by providing a power transistor(TR) for output power control controlling an initial stage power voltage of a first stage high frequency high output TR to control its output voltage and providing a high input impedance operational amplifier to control the power TR. CONSTITUTION:A collector voltage of a first stage high frequency high output TR 5 is received from a final stage power terminal 12 via a power TR 3 of emitter follower constitution. Then a high input impedance operational amplifier 2 connects to a base of the power TR 3, which is controlled by an input signal of a high input impedance operational amplifier 2 (a signal to a high input impedance terminal 1). Thus, the output power is controlled according to an output power -first stage power voltage characteristic of a high frequency high output hybrid circuit 100. Thus, the output power is controlled with an active element of small power and small current.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a high frequency and high power hybrid integrated circuit used for high frequency power amplification in a transmitting stage of a wireless communication device.

[Conventional technology]

Figure 3 shows K using two stages of conventional high-frequency, high-output transistors.
FIG. 2 is an equivalent circuit diagram of an R-wave high output hybrid S product circuit 1oo. In this figure, 4 is a high frequency input terminal for applying a high frequency signal to be power amplified, 5 is a first stage high frequency high output transistor which is one of the active elements for amplifying the high frequency signal,
Reference numeral 6 indicates an input matching circuit for matching the high frequency signal source impedance (usually 50Ω) with the input impedance of the first stage high frequency high output transistor 5, and efficiently supplies high frequency high output to the first stage high frequency high output transistor 5; The first-stage DC power supply element 8 is used to operate the first-stage high-frequency Takayama Karan Lister 5 and to supply DC power for exchanging high-frequency power. collector RF C (Radio Freq
9 is a bypass capacitor for biasing the high frequency signal No. 41 that cannot be blocked by the collector RFC8 to the ground, and 1o is a bypass capacitor for further power amplifying the high frequency signal power amplified by the first stage high frequency high output transistor 5. A final stage high frequency high output transistor 11, which is an active element, matches the input impedance of the final stage high frequency high output transistor 10 and the output impedance of the first stage high frequency high output transistor 5, and outputs electric power at the first stage high frequency high output transistor 5. An interstage matching circuit for efficiently supplying the amplified high frequency signal to the final stage high frequency high output transistor 1o, 12 is the final stage high frequency high output transistor 1oie! 13 is a final stage DC power supply terminal for supplying DC power to be converted into high frequency power, and 13 is a terminal for transmitting the high frequency signal power amplified by the high frequency/high output hybrid integrated circuit 100 to an antenna switching and a low pass filter. etc., connect to other circuits of 4 mm, etc.
A high frequency output terminal 14 is for supplying the output impedance of the final stage high frequency high power transistor 10 and the load of the high frequency high power hybrid integrated circuit 100 (other circuits 2 of the transmitting section).
An output matching circuit (usually 50Ω) is used to efficiently supply a power-amplified high-frequency signal to a load. Reference numeral 15 is a DC and high-frequency earth (ground) terminal of the high-frequency, high-output hybrid integrated circuit 100.

Next, we will discuss the operation of the high-frequency, high-power hybrid integrated circuit 100 shown in FIG.
PC) will be explained. High frequency high output hybrid S multiplication Ff!
100 will be explained in the case of a VHF band 50W high frequency high output hybrid integrated circuit.

A DC voltage va is applied to the collector of the first stage high frequency high output transistor 5. When 12.5 V is supplied as 1 and 0.4 W of high frequency high output is supplied to the base of the first stage high-rise M high output transistor 5, the first stage high frequency high output transistor 5 has a high frequency/DC conversion efficiency of '7ot=50%. and high frequency output Po,
= Outputs 10W and generates DC current ■. 1=
L6A flows into the collector of the first stage high frequency high output transistor 5. Next, when the output power of the first stage high frequency high output transistor 5 is input to the final stage high frequency high output transistor 100 and P1n*=10W is supplied to the base, and 12.5 V is supplied to the collector as the DC voltage V QO2, the final stage high frequency The high output transistor 10 has high frequency/DC conversion efficiency: r). 2=60% and high frequency output p0. =50
Roll out a W. At that time, from the final stage DC power supply terminal 12 to the high frequency and high output hybrid S product circuit 100 (■). 2=8, OA DC current flows.

To briefly explain the DC to high frequency power conversion of a high frequency, high output transistor, as shown in Figure 4, the collector side (
capacitor C(f) on the output side) changes. By charging and discharging the electric charge due to the change in the capacitor value C, the DC current is converted into a high frequency wave according to the period of the high frequency signal supplied to the base.

Next, the function of the matching circuit is the same as shown in FIG. 5 under the condition that the maximum power is supplied from the battery E having an internal resistance r to the load RL under the condition that r=Rw.

To summarize the above, a high frequency output of 50 W can be obtained with a high frequency input PI of 1=0.4 W and a DC power of 120 W. In other words, the power is amplified from 0.4W to 50W. Here, the DC impedance: resistance of each DC power supply terminal 7, 12 is (■) at the first stage DC power supply terminal 7. . ,/
16. =12.5VDC/1.6ADC=7.81
(Ω), and Vcaz/I at the final stage DC power supply terminal 12.
ct=12, 5VDC/8.0AI)C=1
．． Very low at 56 (Ω). Therefore, it serves as a current supply terminal.

Next, output power control (APC: Automation)
c PowerControl) will be briefly explained. APC was intended to keep the transmission power constant despite changes in environmental conditions such as power supply voltage and temperature of the radio. However, in recent mobile communication devices, there has been a trend to systematically reduce the transmission output according to the radio wave propagation situation, to minimize the chances of interference with others, and to make effective use of radio waves.

The basic configuration of the APC circuit uses a loop control system as shown in FIG. That is, a directional coupler or the like is provided after the output terminal of the high frequency/high power hybrid integrated circuit 100, and a part of the output power is taken out, detected and rectified, and the transmitted power is monitored. An output detection section 200 is provided. This output liao-retaining part 20
By comparing the output of 0 with the reference voltage E and controlling the first stage power supply voltage Vee8 with a voltage proportional to the error, the high frequency power of the hybrid integrated circuit, that is, the transmission power of the radio device is controlled. Note that 2 is a high input impedance type operational amplifier.

For reference, Figure 7 shows the first stage power supply voltage■. . 1 and output power P0.

[Problem to be solved by the invention]

Since the conventional high-frequency, high-power hybrid integrated circuit 100 is configured as described above, in order to implement APC, it is necessary to use a power transistor with a certain amount of current capacity and power capacity as an emitter follower, etc. However, there was a problem in that it was necessary to provide heat dissipation for the power transistor and space for the device in the transmission stage.

This invention was made in order to solve the above-mentioned problems, and includes configuring a power transistor inside a high frequency, high output hybrid integrated circuit, controlling the power transistor with a high input impedance type OP amplifier, and controlling the OP amplifier. By simultaneously incorporating an amplifier, a power supply terminal with high input impedance can be obtained, and the purpose is to configure an APC circuit using active elements with low power and low current.

[Means to solve the problem]

High frequency and high output hybrid according to this invention! The s-product circuit is provided with a power transistor for output power control to control the output power by controlling the first-stage power supply voltage of the first-stage high-frequency, high-output transistor, and further includes a high input impedance type OP amplifier to control this power transistor. It is something that

[Effect]

In this invention, current is controlled to flow through the power transistor from another power supply terminal, and a high input impedance type OP amplifier is used to control the power transistor. Can be controlled using capacitive active elements.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is an equivalent circuit diagram of a high frequency, high power hybrid integrated circuit which is an embodiment of the present invention. In the figure, 1 is a high input impedance terminal, 2 is a high input impedance type OP amplifier connected to the high input impedance terminal 1, and 3 is a high input impedance type OP amplifier connected to the high input impedance terminal 1.
is a power) run lister with an emitter follower. Note that the other symbols are the same as those of the conventional one shown in FIG. 3, so the explanation will be omitted.

Next, the operation will be explained.

Since the basic operation is the same as that of a conventional high-frequency, high-output hybrid integrated circuit, the explanation will be omitted, and only the first stage power supply section will be explained. First, the collector voltage of the first stage high frequency, high output transistor 5 is supplied from the final stage power supply terminal 12 via the power transistor 3 configured as an emitter follower, and a high input impedance type OP amplifier 2 is connected to the base of the power transistor 3. By connecting, it is controlled by the input signal of the high input impedance type OP amplifier 2 (signal of the high input impedance terminal 1).

The output power of the high frequency high power hybrid integrated circuit is controlled according to the first stage power supply voltage characteristics.

FIG. 2 shows another embodiment of the invention. In this embodiment, the high input impedance terminals I, .about.11 of the high input impedance type OP amplifier 2 are multi-terminal and multifunctional.

〔Effect of the invention〕

As explained above, the present invention provides a power transistor for output power control to control the first stage power supply voltage of the first stage high frequency high output transistor to control the output power,
Furthermore, since it is equipped with a high input impedance type OP amplifier that controls this power transistor, there is no need to use a separate power transistor and there is no need to consider heat radiation issues, allowing set manufacturers to use less power.

Effects such as the ability to control the output power of a high frequency, high output hybrid integrated circuit with a small current active element 'I' I L etc. can be obtained.

[Brief explanation of drawings]

FIG. 1 is an equivalent circuit diagram of a high frequency Takada power hybrid integrated circuit which is an embodiment of the present invention, FIG. 2 is an equivalent circuit diagram of a high frequency high power hybrid integrated circuit which is another embodiment of the present invention, and FIG. is an equivalent circuit diagram of a conventional high-frequency, high-output hybrid integrated circuit, Figure 4 is an explanatory diagram of the operation of a high-frequency, high-output transistor, Figure 5 is an equivalent circuit diagram of a high-frequency matching circuit, and Figure 6 is an equivalent circuit diagram of a high-frequency, high-output hybrid integrated circuit. A control circuit diagram when used in an APC circuit,
Figure 7 shows the output power of a high frequency, high power hybrid integrated circuit. FIG. 3 is a characteristic curve diagram of input and first stage power supply voltage. In the figure, 1 is a high input impedance terminal, 2 is a high input impedance type OP amplifier, 3 is a power transistor, 5 is a first stage high frequency high output transistor, 6 is an input matching circuit, 8 is a collector RFC19 is a bypass capacitor,
Reference numeral 10 indicates a final stage high-frequency, high-output transistor, 11 indicates a crotch matching circuit, and 100 indicates a high-frequency, high-output hybrid integrated circuit. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] In a high-frequency, high-output hybrid integrated circuit that has a first-stage high-frequency, high-output transistor and a final-stage high-frequency, high-output transistor and amplifies the power of a high-frequency input, the output power is controlled by controlling the first-stage power supply voltage of the first-stage, high-frequency, high-output transistor. A power transistor is installed to control the output power of
A high frequency, high output hybrid integrated circuit further comprising a high input impedance type OP amplifier for controlling the power transistor.