JPH0311685B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface acoustic wave device having a structure that can operate with high efficiency.

Recently, various surface acoustic wave devices that utilize surface acoustic waves propagating along the surface of an elastic body have been actively developed. The reasons for this are, first, that the propagation speed of surface acoustic waves is approximately 10 ^-5 times the speed of electromagnetic waves, making it possible to miniaturize and increase the density of devices.

Second, since surface acoustic waves propagate on material surfaces, signals can be tapped from any location along the transmission path. Third, because energy is concentrated on the surface of a material, it can be applied to devices that utilize interaction with light or semiconductor carriers, or devices that utilize nonlinear effects due to high energy density.

Fourth, since IC technology can be used for its manufacturing technology, it is expected that new devices combined with ICs will be realized.

Figures 1 and 2 show the structure of a conventional surface acoustic wave device, in which 1 is a piezoelectric substrate made of lithium niobate (LiNbO ₃ ) cut at 132°Y, and 2 is made of silicon. 3 is a piezoelectric thin film made of zinc oxide (ZnO) whose surface is almost equivalent to the (0001) plane and is the cut plane of the silicon substrate 2. 4 and 5 are comb-shaped electrodes provided on the lithium niobate substrate 1 and the zinc oxide film 3 so as to intersect with each other. For example, 4 is an input electrode, and 5 is an input electrode. Used as output electrode.

Here, the surface acoustic wave excited from the input electrode 4 propagates on the surface of the lithium niobate substrate 1 or the surface of the zinc oxide film 3 and is extracted from the output electrode 5.

In these structures, in Figure 1, when Rayleigh waves are used as surface acoustic waves to propagate,
Electromechanical coupling coefficient K, which is an important index for device characteristics
The square value of K ² can be obtained as a large value of about 5.5%, so
Taking advantage of this advantage, it has been applied to various fields.

However, since the substrate is made of a single material, there is a drawback that the electromechanical coupling coefficient K is fixed depending on the substrate crystal axis direction and the propagation direction of the surface acoustic wave relative to the substrate crystal axis direction.

In this regard, in FIG. 2, when Sezawa waves are used as surface acoustic waves and are propagated in a direction approximately equivalent to the [011] axis direction of the silicon substrate 2, the zinc oxide film 3
By selecting the film thickness h ₁ to a certain value determined by analysis, flexibility can be given to the K ² characteristics,
Also, the electromechanical coupling coefficient K is larger than that of the structure shown in Figure 1.
can be obtained. For example, the above zinc oxide film thickness h ₁
By choosing ωh ₁ = 8000 (ω is the angular frequency of the surface acoustic wave), K ² can be approximately 6.04%.

However, in this structure, the zinc oxide film 3 is formed by sputtering technology, etc., but as mentioned above, in order to obtain the optimum characteristics, it is necessary to form the film with a relatively large thickness, which increases costs in terms of productivity. However, there are some unavoidable drawbacks. Therefore, the electromechanical coupling coefficient K is as large as possible with the smallest possible film thickness.
A structure that provides the following is desired.

The present invention was made in response to the above problems, and consists of a silicon substrate cut with a plane approximately equivalent to the (100) plane, a silicon dioxide film formed on the silicon substrate, and a silicon dioxide film formed on the silicon dioxide film. a zinc oxide film formed so that a plane substantially equivalent to the (0001) plane is parallel to the cut plane of the silicon substrate, and a conductive film formed between the zinc oxide film and the silicon dioxide film. , an electrode formed on the zinc oxide film, and a surface configured to propagate surface acoustic waves in a direction substantially equivalent to the [011] axis direction of the silicon substrate to eliminate conventional defects. The object is to provide an acoustic wave element. Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 is a cross-sectional view showing a surface acoustic wave device according to an embodiment of the present invention, 11 is a silicon substrate cut in a plane substantially equivalent to the (100) plane, and 12 is a film thickness h formed on this silicon substrate 11. ₂ , a silicon dioxide (SiO ₂ ) film 13 is formed on this silicon dioxide film 12 so that a plane substantially equivalent to the (0001) plane is parallel to the cut plane of the silicon substrate 11, and has a thickness h ₁ 14 and 15 are input and output electrodes formed of interdigitated electrodes, respectively, and 16 is a conductive film formed between the zinc oxide film 13 and the silicon dioxide film 12. It is desirable that the thickness be infinitely small.

Note that the conductive film 16 or the zinc oxide film 13 is desirably formed so as to be located directly below at least the crossing width portion of the comb-shaped electrodes 14 and 15.

The above structure {ZnO(0001)/SiO ₂ /Si(100)
4 and 5 by applying electric current to the surface acoustic wave device (abbreviated as [011]) in a direction substantially equivalent to the [011] axis direction of the silicon substrate 11 using Sezawa waves as surface acoustic waves. A K ² characteristic curve like this was obtained.

In FIG. 4, the horizontal axis shows the thickness _h2 of the silicon dioxide film 12 in ωh2 (ω is the angular frequency), and the vertical axis shows the square value ^K2 _of the electromechanical coupling coefficient K in percentage. be. In addition, in FIG. 5, the horizontal axis indicates the thickness of the zinc oxide film h ₁ as ωh ₁ (ω is the angular frequency),
The vertical axis indicates the square value K ² of the electromechanical coupling coefficient K in percentage. In Figure 4, ωh ₁ = 7000
ωh ₂ was changed with the setting set to (preferably
126 to 10000) shows the change in ^K2 for the case,
FIG. 5 shows the change in K ² when ωh ₁ is changed (preferably within the range of 4200 to 15000) with ωh ₂ =1000.

As is clear from FIGS. 4 and 5, the thickness h ₁ of the zinc oxide film 13 and the silicon dioxide film 12
By selecting the film thicknesses h ₂ of ωh ₁ =7000 and ωh ₂ =1000, respectively, a maximum value K ² =6.12% was obtained at point A.

The above value is the value obtained with the conventional structure shown in Figure 2 (K ²
= 6.04%, ωh ₁ = 8000), and the film thickness h ₁ of the zinc oxide 13 is reduced from the conventional ωh ₁ = 8000 to ωh ₁ by interposing the silicon dioxide film 12.
= 7000.

This makes it possible to reduce costs in terms of productivity.

In addition, by adjusting the film thickness h ₁ of the zinc oxide film 13 and the film thickness h ₂ of the silicon dioxide film 12 variously within the above-mentioned ranges, a surface acoustic wave element with superior flexibility than the conventional structure in terms of characteristics can be obtained. can be realized.

The cut plane of the silicon substrate 11 is approximately equivalent to the (100) plane, the zinc oxide film 13 is approximately equivalent to the (0001) plane, and the propagation axis of the silicon substrate 11 is approximately equivalent to the [011] axis direction. Although the explanation has been given by taking the example of the case shown in FIG. 2, there is no essential difference in the device characteristics even if the slope is 10 degrees or less from the predetermined value shown therein.

FIG. 6 shows another embodiment of the present invention applied to a convolver element, in which 17 is a gate electrode provided between the input electrode 14 and the output electrode 15 on the zinc oxide film 13.

With this structure, it is possible to obtain an element with excellent K ² characteristics as in the previous embodiment.

Furthermore, even without using a comb-shaped electrode, the silicon substrate 1
1. Silicon dioxide film 12 and zinc oxide film 13
We can expect to realize devices that utilize the electrical potential generated within the device.

As is clear from the above description, according to the present invention,
A silicon substrate cut with a plane almost equivalent to the (100) plane, a silicon dioxide film formed on this silicon substrate, and a plane almost equivalent to the (0001) plane cut on this silicon dioxide film. A zinc oxide film formed parallel to the cut surface, a conductive film formed between the zinc oxide film and the silicon dioxide film, and an electrode formed on the zinc oxide film, Since it is configured to propagate surface acoustic waves in a direction approximately equivalent to the [011] axis direction of the silicon substrate, it is possible to increase the electromechanical coupling coefficient, allowing the surface acoustic wave device to operate efficiently. be able to.

According to the present invention, by using an integrated circuit and a common substrate as a silicon substrate, it is possible to realize a compact and high-density element that integrates a functional element and a semiconductor element by utilizing integrated circuit technology.

[Brief explanation of the drawing]

1 and 2 are sectional views showing a conventional example, 3 and 6 are sectional views showing an embodiment of the present invention, and 4 and 5 are sectional views showing a conventional example. FIG. 11...Silicon substrate, 12...Silicon dioxide film, 13...Zinc oxide film, 14...Input electrode,
15... Output electrode, 16... Conductive film, 17... Gate electrode.

Claims (1)

[Claims] 1. A silicon substrate cut with a plane substantially equivalent to the (100) plane, a silicon dioxide film formed on the silicon substrate, and a silicon dioxide film cut on the silicon dioxide film with a plane substantially equivalent to the (0001) plane. a zinc oxide film formed such that its surface is parallel to the cut surface of the silicon substrate; a conductive film formed between the zinc oxide film and the silicon dioxide film; and a conductive film formed on the zinc oxide film. [011] of the silicon substrate.
A surface acoustic wave element configured to propagate surface acoustic waves in a direction substantially equivalent to an axial direction. 2. The surface acoustic wave device according to claim 1, wherein the conductive film is extremely thinner than the silicon dioxide film and the zinc oxide film. 3. The surface acoustic wave device according to claim 1, wherein the crystal plane and its propagation axis have an inclination within 10 degrees from the predetermined crystal plane and propagation axis direction. 4. Claim 1 or 3, characterized in that a Sezawa wave is used as the surface acoustic wave element.
The surface acoustic wave device described in Section 1. 5 The film thickness h ₁ of the above zinc oxide film is 4200Ωh ₁
15,000 (where ω is the angular frequency of the surface acoustic wave)
The surface acoustic wave device according to any one of items 1 to 4. 6. The surface acoustic wave device according to any one of claims 1 to 5, wherein the electrode has a comb-shaped structure. 7. The surface acoustic wave device according to claim 1, wherein the conductive film is located directly below the intersecting width portion of the comb-shaped electrodes.