JPH03111017U - - Google Patents
Info
- Publication number
- JPH03111017U JPH03111017U JP2108490U JP2108490U JPH03111017U JP H03111017 U JPH03111017 U JP H03111017U JP 2108490 U JP2108490 U JP 2108490U JP 2108490 U JP2108490 U JP 2108490U JP H03111017 U JPH03111017 U JP H03111017U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- diode
- attenuator
- rom
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Description
第１図は本考案によるトランジスタ電力増幅器
の系統図である。第２図は本考案を説明するため
の図でａは第５図ａのような温度特性をもつたト
ランジスタ電力増幅器の利得を一定にするために
必要な、ダイオードを使用した減衰器１の温度特
性を示し、ｂは同様に第５図ｂのような温度特性
を補償するためのダイオードを使用した減衰器１
の温度特性を示す。第３図はダイオードを使用し
た減衰器１の一例を示す。第４図は従来のトラン
ジスタ電力増幅器の系統図、第５図ａ，ｂは従来
のトランジスタ電力増幅器の温度特性の一例を示
す。
１……ダイオードを使用した減衰器、２，３，
４……トランジスタ電力増幅段、５……Ｄ／Ａ変
換器、６……ＲＯＭ、７……Ａ／Ｄ変換器、８…
…温度センサー、９……高周波線路、１０……減
衰量制御電圧、１１……減衰量制御データ（複数
ビツトデジタル信号）、１２……温度データ（複
数ビツトデジタル信号）、１３……ダイオード、
１４……高周波阻止用チヨークコイル、１５……
減衰量制御電圧入力端子。
FIG. 1 is a system diagram of a transistor power amplifier according to the present invention. Figure 2 is a diagram for explaining the present invention, and a is the temperature of the attenuator 1 using a diode, which is necessary to constant the gain of a transistor power amplifier having the temperature characteristics as shown in Figure 5 a. Similarly, b is an attenuator 1 using a diode to compensate for the temperature characteristics as shown in FIG. 5b.
shows the temperature characteristics of FIG. 3 shows an example of an attenuator 1 using a diode. FIG. 4 is a system diagram of a conventional transistor power amplifier, and FIGS. 5a and 5b show an example of temperature characteristics of the conventional transistor power amplifier. 1... Attenuator using a diode, 2, 3,
4...Transistor power amplification stage, 5...D/A converter, 6...ROM, 7...A/D converter, 8...
... Temperature sensor, 9 ... High frequency line, 10 ... Attenuation control voltage, 11 ... Attenuation control data (multi-bit digital signal), 12 ... Temperature data (multi-bit digital signal), 13 ... Diode,
14... High frequency blocking coil, 15...
Attenuation control voltage input terminal.
Claims (1)
た減衰器を有するトランジスタ電力増幅回路にお
いて、周囲温度を検知し、検知温度に対応したデ
ジタル信号を出力する温度センサと、温度センサ
のデジタル出力をアドレスとして前記アドレスに
対応した温度における前記ダイオードを使用した
減衰器の制御電圧のデータを予め記憶したＲＯＭ
（読み出し専用メモリ）と、前記ＲＯＭの出力を
Ｄ／Ａ変換するＤ／Ａ変換器とを有することを特
徴とするトランジスタ電力増幅器。 In a transistor power amplifier circuit that has an attenuator using a diode in the middle of an internal high-frequency line, there is a temperature sensor that detects the ambient temperature and outputs a digital signal corresponding to the detected temperature, and a digital output of the temperature sensor that is used as an address. A ROM that stores in advance data on the control voltage of the attenuator using the diode at a temperature corresponding to the address.
(a read-only memory); and a D/A converter for D/A converting the output of the ROM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2108490U JPH03111017U (en) | 1990-03-01 | 1990-03-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2108490U JPH03111017U (en) | 1990-03-01 | 1990-03-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03111017U true JPH03111017U (en) | 1991-11-14 |
Family
ID=31524161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2108490U Pending JPH03111017U (en) | 1990-03-01 | 1990-03-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03111017U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005151442A (en) * | 2003-11-19 | 2005-06-09 | Toshiba Corp | Pulse power amplifier |
-
1990
- 1990-03-01 JP JP2108490U patent/JPH03111017U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005151442A (en) * | 2003-11-19 | 2005-06-09 | Toshiba Corp | Pulse power amplifier |
| JP4707319B2 (en) * | 2003-11-19 | 2011-06-22 | 株式会社東芝 | Pulse power amplifier |
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