JPH03101225A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH03101225A JPH03101225A JP23890389A JP23890389A JPH03101225A JP H03101225 A JPH03101225 A JP H03101225A JP 23890389 A JP23890389 A JP 23890389A JP 23890389 A JP23890389 A JP 23890389A JP H03101225 A JPH03101225 A JP H03101225A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- pressure
- vacuum processing
- processing chamber
- evacuation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000007789 gas Substances 0.000 abstract description 12
- 239000002341 toxic gas Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は真空処理室と予備排気室とを備えた半導体製
造装置、特にこの半導体製造装置で使用される有害ガス
のガス漏れ防止に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor manufacturing device equipped with a vacuum processing chamber and a preliminary evacuation chamber, and particularly to prevention of leakage of harmful gases used in this semiconductor manufacturing device. be.
第２図は従来の半導体製造装置の構成図である。図にお
いて、（１）は真空処理室、（２）は予備排気室、（３
） 、 （（４）はそれぞれ真空処理室（１）と予備排
気室（２とを排気するためにバルブ（５） 、 （６）
を介して接続された真空ポンプ、（′７）は真空処理室
（１）と予備排気室（２とを隔離するバルブ、（急は予
備排気室（２と外気とを隔離するバルブ、（９）、（１
０）はそれぞれ真空処理室（１）と予備排気室（２との
ガス導入部である。FIG. 2 is a block diagram of a conventional semiconductor manufacturing apparatus. In the figure, (1) is a vacuum processing chamber, (2) is a preliminary evacuation chamber, and (3) is a vacuum processing chamber.
), ((4) are valves (5) and (6) for evacuating the vacuum processing chamber (1) and preliminary exhaust chamber (2), respectively.
The vacuum pump ('7) is a valve that isolates the vacuum processing chamber (1) and the preliminary exhaust chamber (2), ('7) is the valve that isolates the preliminary exhaust chamber (2) from the outside air, and ('7) is the valve that isolates the preliminary exhaust chamber (2) from the outside air. ), (1
0) are the gas introduction parts of the vacuum processing chamber (1) and the preliminary evacuation chamber (2), respectively.
次に動作について説明する。真空処理室（１）は開いた
バルブ（Ｓを介して真空ポンプ（Ｊにより常に真空引き
されている。例えばウェハ等の処理品はバルブ（８）を
通り予備排気室（′３に入る。バルブ（印が閉じてバル
ブ（■が開くことにより真空ポンプ（４）により予備排
気室（■が真空引きされる。Next, the operation will be explained. The vacuum processing chamber (1) is constantly evacuated by a vacuum pump (J) through an open valve (S). For example, the processed product such as a wafer passes through the valve (8) and enters the pre-evacuation chamber ('3). (When the mark closes and the valve (■ opens), the pre-exhaust chamber (■) is evacuated by the vacuum pump (4).
真空になると、バルブ（６）が閉じてバルブ（７）が開
くことによりバルブ（′７）を通って処理品は真空処理
室（１）に移る。次にバルブ（′７）が閉じ、ガス導入
部（９よりガスを導入して処理品が処理される。When a vacuum is created, the valve (6) is closed and the valve (7) is opened, so that the processed product is transferred to the vacuum processing chamber (1) through the valve ('7). Next, the valve ('7) is closed, and gas is introduced from the gas introduction section (9) to process the product.
処理が終了すると、バルブ（力が開き処理品はバルプ（
７）を通り予備排気室（２に戻る。パルプ（′ｒ）が閉
じ、ガス導入部（１０）より窒素等の不活性ガスを導入
し、予備排気室（２を大気圧にパージする。パルプ（８
）を開きここを通って処理品を取り出す。When processing is completed, the valve (force opens) and the processed product is removed from the valve (
7) and returns to the preliminary exhaust chamber (2). The pulp ('r) is closed, and an inert gas such as nitrogen is introduced from the gas introduction part (10), and the preliminary exhaust chamber (2 is purged to atmospheric pressure. Pulp (8
) and take out the processed items through here.
なお、真空処理室（υで処理中に予備排気室（２を大気
圧にパージし、パルプ（印を開きここを通してすでに処
理の終了している処理品を取り出したり、また次の処理
品を入れて真空引きし用意しておく場合もある。In addition, during processing in the vacuum processing chamber (υ), purge the preliminary exhaust chamber (2) to atmospheric pressure, open the pulp (mark), and use it to take out processed products that have already been processed, or to insert the next processed product. In some cases, it is prepared by vacuuming it.
従来の半導体製造装置は以上のように構成されているの
で、真空処理室（１）の真空引き、パージと予備排気室
（２の真空引き、パージは画室の圧力に無関係に独立し
て行なわれ、真空処理室（１）の圧力が予備排気室（ａ
の圧力よりも高い状態が存在し得て、画室を隔離してい
るパルプ（７）の密閉性に不具合があった場合、真空処
理室（１）内で使用する有害ガスが予備排気室（７：Ｊ
更には外気に漏れる可能性があるという問題点があった
。Since conventional semiconductor manufacturing equipment is configured as described above, evacuation and purging of the vacuum processing chamber (1) and evacuation and purging of the preliminary evacuation chamber (2) are performed independently regardless of the pressure in the chamber. , the pressure in the vacuum processing chamber (1) is reduced to the pre-evacuation chamber (a
If there is a situation where the pressure is higher than the pressure of :J
Furthermore, there is a problem that there is a possibility of leakage into the outside air.
この発明は上記のような問題点を解消するためになされ
たもので、真空処理室と予備排気室とを隔離しているパ
ルプの密閉性に不具合が生じても、真空処理室内で使用
される有害ガスが予備排気室や外気に漏れない半導体製
造装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and even if there is a problem with the sealing property of the pulp that separates the vacuum processing chamber from the pre-evacuation chamber, the pulp can still be used in the vacuum processing chamber. The purpose of the present invention is to obtain a semiconductor manufacturing equipment in which noxious gases leak into the preliminary exhaust chamber or into the outside air.
（！ｔ！１題を解決するための手段〕
この発明に係る半導体製造装置は、真空処理室および予
備排気室の圧力をモニターし、予備排気室の圧力を真空
処理室の圧力より常に高く・保つようにしたものである
。(Means for Solving Problem !t!1) The semiconductor manufacturing apparatus according to the present invention monitors the pressure in the vacuum processing chamber and the pre-evacuation chamber, and keeps the pressure in the pre-evacuation chamber higher than the pressure in the vacuum processing chamber. It was designed to be kept.
この発明における半導体製造装置は、予備排気室の圧力
を真空処理室の圧力より常に高く保つようにすることに
より、画室を隔離しているパルプの密閉性に不具合が生
じても、真空処理室内で使用される有害ガスは、より圧
力の高い予備排気室に漏れることはない。In the semiconductor manufacturing apparatus of the present invention, the pressure in the pre-evacuation chamber is always maintained higher than the pressure in the vacuum processing chamber, so that even if a problem occurs in the airtightness of the pulp that isolates the compartments, the pressure in the vacuum processing chamber is maintained. The harmful gases used do not leak into the higher pressure pre-evacuation chamber.
以下、この発明の一実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は半導体製造装置の構成図で、図中符号（１）〜
（１０）は上記従来のものと全く同一のものである。図
において、（１１）。Figure 1 is a configuration diagram of a semiconductor manufacturing equipment, and the symbols (1) to
(10) is exactly the same as the conventional one mentioned above. In the figure, (11).
（１２）はそれぞれ真空処理室（υと予備排気室（７Ｊ
との圧力をモニターする圧力計である。(12) are the vacuum processing chamber (υ) and the preliminary evacuation chamber (7J), respectively.
This is a pressure gauge that monitors the pressure.
次に動作について説明する。圧力計（１２）によりモニ
ターされる予備排気室（２の圧力が圧力計（１１）によ
りモニターされる真空処理室（１）の圧力よりも常に高
くなるように、パルプ（５１゜（６）やガス導入部（９
３，（１０）をマイコン等を使って制御する。Next, the operation will be explained. The pulp (51° (6) and Gas introduction part (9
3. (10) is controlled using a microcomputer or the like.
その他の動作は前記従来のものと同一である。Other operations are the same as the conventional one.
なお、上記実施例では真空処理室（４）および予備排気
室（２はともに一つずつしかない場合を示したが、どち
らか一方が複数の場合、双方とも複数の場合でも、それ
ぞれ相接する真空処理室と予備排気室との間に同様の処
置を施せば適用できる。In addition, in the above embodiment, the case where there is only one vacuum processing chamber (4) and one pre-evacuation chamber (2) is shown. This can be applied by applying similar measures between the vacuum processing chamber and the pre-evacuation chamber.
以上のように、この発明によれば予備排気室の圧力を真
空処理室の圧力より常に高く保つことにより、真空処理
室内で使用される有害ガスが予備排気室に漏れることが
なくなるので、予備排気室内の部品に損傷を与えること
を防ぎ、また有害ガスが外気に漏れることを防止できる
ので安全上極めて大きな効果がある。As described above, according to the present invention, by always maintaining the pressure in the pre-evacuation chamber higher than the pressure in the vacuum processing chamber, harmful gases used in the vacuum processing chamber will not leak into the pre-evacuation chamber. This is extremely effective in terms of safety because it prevents damage to indoor components and prevents harmful gases from leaking into the outside air.
第１図はこの発明の一実施例による半導体製造装置の構
成図、第２図は従来の半導体製造装置の構成図である。
図において、（υは真空処理室、（Ｚ）は予備排気室、
（３） 、 （４）は真空ポンプ、（５） 、 （６）
、 （７） 、 （８）はパルプ、（９）、（１０）
はガス導入部、（１１）（１２）は圧力計を示す。
なお、図中同一符号は同一または相当部分を示す。FIG. 1 is a block diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional semiconductor manufacturing apparatus. In the figure, (υ is the vacuum processing chamber, (Z) is the preliminary evacuation chamber,
(3) and (4) are vacuum pumps, (5) and (6)
, (7), (8) are pulp, (9), (10)
indicates a gas introduction part, and (11) and (12) indicate a pressure gauge. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
室および予備排気室と、この真空処理室および予備排気
室をそれぞれ排気するためにバルブを介して接続された
真空ポンプと、前記真空処理室と予備排気室および予備
排気室と外気をそれぞれ隔離するバルブとを備え、前記
予備排気室の圧力を前記真空処理室の圧力より常に高く
保つようにしたことを特徴とする半導体製造装置。(1) A vacuum processing chamber and a pre-evacuation chamber each equipped with a pressure gauge and a gas inlet, a vacuum pump connected via a valve to evacuate the vacuum processing chamber and the pre-evacuation chamber, and the vacuum 1. A semiconductor manufacturing apparatus comprising a processing chamber, a pre-evacuation chamber, and a valve for isolating the pre-evacuation chamber from outside air, respectively, and the pressure in the pre-evacuation chamber is always maintained higher than the pressure in the vacuum processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23890389A JPH03101225A (en) | 1989-09-14 | 1989-09-14 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23890389A JPH03101225A (en) | 1989-09-14 | 1989-09-14 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03101225A true JPH03101225A (en) | 1991-04-26 |
Family
ID=17036985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23890389A Pending JPH03101225A (en) | 1989-09-14 | 1989-09-14 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03101225A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000306838A (en) * | 1999-04-20 | 2000-11-02 | Matsushita Electronics Industry Corp | Treatment method and apparatus for semiconductor substrate |
-
1989
- 1989-09-14 JP JP23890389A patent/JPH03101225A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000306838A (en) * | 1999-04-20 | 2000-11-02 | Matsushita Electronics Industry Corp | Treatment method and apparatus for semiconductor substrate |
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