JPH0290554U - - Google Patents

Info

Publication number
JPH0290554U
JPH0290554U JP16966988U JP16966988U JPH0290554U JP H0290554 U JPH0290554 U JP H0290554U JP 16966988 U JP16966988 U JP 16966988U JP 16966988 U JP16966988 U JP 16966988U JP H0290554 U JPH0290554 U JP H0290554U
Authority
JP
Japan
Prior art keywords
switching device
path
power
high frequency
low power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16966988U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16966988U priority Critical patent/JPH0290554U/ja
Publication of JPH0290554U publication Critical patent/JPH0290554U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Radar Systems Or Details Thereof (AREA)
  • Transceivers (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例による送受切換装
置を示す回路図、第2図はこの考案の他の実施例
を示す送受切換装置の回路図、第3図は従来の送
受切換装置を示す回路図、第4図は送受切換装置
の送信状態における等価回路図、第5図は送受切
換装置の受信状態における等価回路図である。 図において、1,2はFETトランジスタ・ピ
ンダイオード・リミツタダイオード等のスイツチ
ング素子、3,4はチヨークコイル、5は制御回
路、6は結合器、7は検波ダイオードを示す。な
お、図中、同一符号は同一、又は相当部分を示す
Fig. 1 is a circuit diagram showing a transmission/reception switching device according to one embodiment of this invention, Fig. 2 is a circuit diagram of a transmission/reception switching device showing another embodiment of this invention, and Fig. 3 shows a conventional transmission/reception switching device. FIG. 4 is an equivalent circuit diagram of the transmitting/receiving switching device in the transmitting state, and FIG. 5 is an equivalent circuit diagram of the transmitting/receiving switching device in the receiving state. In the figure, 1 and 2 are switching elements such as FET transistors, pin diodes, and limiter diodes, 3 and 4 are choke coils, 5 is a control circuit, 6 is a coupler, and 7 is a detection diode. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高周波大電力が通過する経路と小電力が通過す
る経路を切換える切換装置において、この切換装
置のスイツチング素子としてリミツタダイオード
をRF線路に直・並列に接続することにより、外
部から制御することなくその電力の大小により自
己駆動を行なうことを特徴とする送受切換装置。
In a switching device that switches between a path for high frequency high power and a path for low power, by connecting a limiter diode in series and parallel to the RF line as a switching element of this switching device, the switching device can switch between a path for high frequency high power and a path for low power to pass without external control. A transmission/reception switching device characterized by self-driving depending on the magnitude of electric power.
JP16966988U 1988-12-27 1988-12-27 Pending JPH0290554U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16966988U JPH0290554U (en) 1988-12-27 1988-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16966988U JPH0290554U (en) 1988-12-27 1988-12-27

Publications (1)

Publication Number Publication Date
JPH0290554U true JPH0290554U (en) 1990-07-18

Family

ID=31459936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16966988U Pending JPH0290554U (en) 1988-12-27 1988-12-27

Country Status (1)

Country Link
JP (1) JPH0290554U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206472A (en) * 2009-03-03 2010-09-16 Mitsubishi Electric Corp Semiconductor switch, semiconductor switch mmic, changeover switch rf module, power protection switch rf module, and transmission and reception module
JP2015073301A (en) * 2014-11-21 2015-04-16 三菱電機株式会社 High frequency switch circuit
DE112012002264B4 (en) 2011-05-27 2019-04-11 Mitsubishi Electric Corporation RF switch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010206472A (en) * 2009-03-03 2010-09-16 Mitsubishi Electric Corp Semiconductor switch, semiconductor switch mmic, changeover switch rf module, power protection switch rf module, and transmission and reception module
DE112012002264B4 (en) 2011-05-27 2019-04-11 Mitsubishi Electric Corporation RF switch
JP2015073301A (en) * 2014-11-21 2015-04-16 三菱電機株式会社 High frequency switch circuit

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