JPH0290050A - Method and apparatus for measuring characteristic of heat - Google Patents
Method and apparatus for measuring characteristic of heatInfo
- Publication number
- JPH0290050A JPH0290050A JP24299388A JP24299388A JPH0290050A JP H0290050 A JPH0290050 A JP H0290050A JP 24299388 A JP24299388 A JP 24299388A JP 24299388 A JP24299388 A JP 24299388A JP H0290050 A JPH0290050 A JP H0290050A
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- Japan
- Prior art keywords
- temperature
- sample
- specimen
- resonant frequency
- piezoelectric element
- Prior art date
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Links
- 238000000034 method Methods 0.000 title description 15
- 238000000691 measurement method Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 abstract description 18
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229920002050 silicone resin Polymers 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000007704 transition Effects 0.000 description 10
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 3
- 238000007707 calorimetry Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- 238000002847 impedance measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007572 expansion measurement Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 239000013558 reference substance Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野）
この発明は、化学、高分子化学、及び化学工業分野にお
ける。融解、凝固などの熱力学的状態変化を伴う反応の
分析、及びそれを利用した材料の熱特性の試験、評価を
行なう装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] This invention is in the fields of chemistry, polymer chemistry, and chemical industry. This field relates to an apparatus for analyzing reactions involving thermodynamic state changes such as melting and solidification, and for testing and evaluating thermal properties of materials using the analysis.
［発明の概要）
この発明の熱特性計測方法及び装置は、圧電素子に試料
を接触させ、熱による試料の粘弾性変化を圧電素子の共
振周波数の変化もしくは、インピーダンスの変化として
検出し、計測を行なうことを特徴としている。[Summary of the Invention] The method and device for measuring thermal characteristics of the present invention include bringing a sample into contact with a piezoelectric element, detecting changes in the viscoelasticity of the sample due to heat as changes in the resonant frequency of the piezoelectric element or changes in impedance, and performing measurements. It is characterized by doing.
この発明のうち熱特性計測装置の方は、少なくとも圧電
素子と共振周波数を測定する装置もしくはインピーダン
スを測定する装置のいずれかより構成される。The thermal characteristic measuring device of the present invention is comprised of at least a piezoelectric element and either a device for measuring resonance frequency or a device for measuring impedance.
［従来の技術］
従来、試料の熱的特性を計測する方法及び装置としては
示差熱分析（ＤＴＡｌ法や示唆熱量分析（ＤＳＣ）法が
主に用いられてきた。これらは基準物質と試料を同時に
一定の速度で加熱し、試料に相変化や熱分解などの熱的
特性の変化が生じたときに、基準物質と試料との間に発
生する温度差を検出することにより試料の熱特性を分析
する装置である。[Prior Art] Conventionally, differential thermal analysis (DTAl method) and suggestive calorimetry (DSC) method have been mainly used as methods and devices for measuring the thermal properties of samples. Analyzes the thermal properties of a sample by detecting the temperature difference that occurs between the reference material and the sample when the sample undergoes a change in thermal properties such as a phase change or thermal decomposition when heated at a constant rate. It is a device that does
この他に、熱的性質を計測する手法としては熱膨張を測
定する方法、比熱を測定する方法などがある。Other methods for measuring thermal properties include a method of measuring thermal expansion and a method of measuring specific heat.
［発明が解決しようとする課題１ 従来の測定法では、試料の量がある程度必要であった。[Problem to be solved by the invention 1 Conventional measurement methods require a certain amount of sample.
示差熱分析法や示唆熱量分析法では、測定の基準物質と
して、測定温度範囲で熱特性に変化を生じない物質が必
要である。比熱測定、熱膨張測定では、測定に長時間を
要し、また連続的に測定を行なうことが困難であるとい
う問題点を有している。さらに従来の測定方法では、微
少量の試料や液晶、ＬＢ膜などの試料については測定が
困難であった。Differential thermal analysis and suggestive calorimetry require a substance whose thermal properties do not change within the measurement temperature range as a reference substance for measurement. Specific heat measurement and thermal expansion measurement have problems in that measurements require a long time and are difficult to carry out continuously. Furthermore, with conventional measurement methods, it is difficult to measure small amounts of samples, liquid crystals, LB films, and other samples.
さらに、これまで圧電素子を用いて試料の粘弾性変化を
検出することにより熱特性の計測を行なった例はなく、
本発明はまったく新しい熱特性計測方法及び装置に関す
るものである。Furthermore, until now there has been no example of measuring thermal properties by detecting viscoelastic changes in a sample using a piezoelectric element.
The present invention relates to a completely new method and device for measuring thermal properties.
［課題を解決するための手段１
本発明の熱特性計測方法及び装置は、例えばＡＴカット
水晶振動子を検出器とし、水晶振動子の共振周波数変化
、もしくはインピーダンス変化を連続的に計測すること
によって、ごく少量のサンプル量で、標準物質を使用す
ることなく短時間での熱特性の計測を可能にするもので
ある。[Means for Solving the Problems 1] The method and device for measuring thermal characteristics of the present invention uses, for example, an AT-cut crystal oscillator as a detector, and continuously measures changes in the resonant frequency or impedance of the crystal oscillator. , it is possible to measure thermal properties in a short time with a very small amount of sample and without using standard materials.
また、試料を水晶振動子表面に接触させるだけで、ｚｐ
す定か可能であるため、液晶やＬＢ膜などの従来の技術
では測定が困難であったｊＩｔ料についても測定を可能
とした。In addition, simply by bringing the sample into contact with the crystal resonator surface, zp
Since it can be determined, it has become possible to measure jIt materials, which were difficult to measure using conventional techniques such as liquid crystals and LB films.
［作用］
圧電素子は共振周波数付近の周波数の電圧を印加するこ
とにより機械的な振動を起こす、この振動はきわめて微
小であるが、物質が接した状態で物質と圧電素子表面と
の間のせん断応力による抵抗を受ける。この機械的抵抗
の抵抗係数は、圧電素子の機械的な振動と電気的な振動
とを対応づけて考えると電気的抵抗と同等であると考え
ることができる。従って、共振周波数における損失抵抗
は、圧電素子表面の摩擦係数を反映した値と考え′られ
、この損失抵抗を連続的に計測することによって、物質
の粘弾性変化を計測することができる。また、水晶振動
子のせん断応力が水晶振動子の弾性体として振動する力
と釣りあうことから、共振周波数の変化も、粘弾性変化
と対応する。従って、共振周波数変化を測定することに
よっても、試料の粘弾性変化を追跡することができる。[Operation] A piezoelectric element generates mechanical vibrations by applying a voltage with a frequency near the resonance frequency. Although this vibration is extremely small, it causes shear between the material and the surface of the piezoelectric element when they are in contact with each other. Resistance due to stress. The resistance coefficient of this mechanical resistance can be considered to be equivalent to the electrical resistance when considering the correspondence between the mechanical vibration and the electrical vibration of the piezoelectric element. Therefore, the loss resistance at the resonance frequency is considered to be a value reflecting the coefficient of friction on the surface of the piezoelectric element, and by continuously measuring this loss resistance, changes in the viscoelasticity of the material can be measured. Further, since the shear stress of the crystal oscillator balances the force of the quartz crystal oscillator to vibrate as an elastic body, changes in the resonance frequency also correspond to changes in viscoelasticity. Therefore, the change in viscoelasticity of the sample can also be tracked by measuring the change in resonance frequency.
ここで水晶振動子の共振周波数は、試料の弾性、粘性、
重量変化によって変化し、損失抵抗は粘性変化のみによ
って変化することが知られている。Here, the resonant frequency of the crystal resonator is determined by the elasticity and viscosity of the sample.
It is known that the resistance changes depending on the weight change, and the loss resistance changes only due to the viscosity change.
従って重量変化がない場合には、共振周波数と損失抵抗
値とを比較することにより、試料の粘性的変化と弾性的
変化を考察することができる。Therefore, when there is no weight change, viscous changes and elastic changes of the sample can be considered by comparing the resonance frequency and loss resistance value.
一方、試料に溶解や、ガラス転移などの熱力学的な転移
が生じる前後で、粘弾性に変化が生じることが知られて
おり、よって、この２つの性質を応用することにより、
試料の熱特性を計測することが可能となった。圧電素子
としては、水晶振動子の他、ＳＡＷデバイスや圧電セラ
ミック発振子などが利用可能である。On the other hand, it is known that viscoelasticity changes before and after a thermodynamic transition such as melting or glass transition occurs in a sample. Therefore, by applying these two properties,
It has become possible to measure the thermal properties of samples. As the piezoelectric element, in addition to a crystal resonator, a SAW device, a piezoelectric ceramic resonator, etc. can be used.
［実施例１
以下、この発明の実施例を図面に基づいて説明する。第
１図は、本発明の熱特性計測装置の模式図を示したもの
である。第１図において、ＡＴカット水晶振動子セルｌ
は、恒温槽２に入れられ測定周波数が任意に設定できる
インビーグンス測定器４に接続されている。また、恒温
槽２は、温度測定制御装置３に接続されている。温度制
御装置３、インビーグンス測定器４は、さらに演算また
は制御を行なうためのコンピュータ５に接続され、コン
ピュータ５にはプリンタ６、デイスプレィ７が接続され
ている。第２図は第１図の熱特性３１−１１１１１装置
の模式図のうち、ＡＴカッ１−水晶振動子セル１部分の
構造を示したものである。ＡＴカット水晶振動子８は、
片面のみが試↑４と接するような構造を持つプラスチッ
ク製のボルダ−９にシリコーン樹脂で封入されている。[Embodiment 1] Hereinafter, an embodiment of the present invention will be described based on the drawings. FIG. 1 shows a schematic diagram of a thermal characteristic measuring device of the present invention. In Figure 1, AT-cut crystal resonator cell l
is placed in a constant temperature bath 2 and connected to an invigorance measuring device 4 whose measurement frequency can be set arbitrarily. Further, the constant temperature bath 2 is connected to a temperature measurement control device 3. The temperature control device 3 and the immunity measuring device 4 are further connected to a computer 5 for calculation or control, and a printer 6 and a display 7 are connected to the computer 5. FIG. 2 shows the structure of the AT cup 1-crystal resonator cell 1 portion of the schematic diagram of the thermal characteristics 31-11111 device shown in FIG. The AT cut crystal resonator 8 is
It is sealed with silicone resin in a plastic boulder 9 that has a structure in which only one side is in contact with test ↑4.
本発明の計測方法は、試料をＡＴカット水晶振動子セル
１上に固定して恒温＄１２と温度制御装置３により試料
の温度を一定の速度で変化させていき、同時にＡＴカッ
ト水晶振動子８の共振周波数付近でのインピーダンスの
測定を連続的に行“ない、温度に対するＡＴカット水晶
振動子８の共振周波数および、損失抵抗値の変化を得る
ものである。In the measurement method of the present invention, a sample is fixed on an AT-cut crystal resonator cell 1, and the temperature of the sample is changed at a constant rate using a constant temperature $12 and a temperature control device 3. At the same time, an AT-cut crystal resonator cell 8 The impedance is continuously measured near the resonant frequency of the AT-cut crystal resonator 8 to obtain changes in the resonant frequency and loss resistance value of the AT-cut crystal resonator 8 with respect to temperature.
本発明の計測装置において、試料はＡＴカット水晶振動
子セルｌ上に固定され、恒温Ｉ！２中に入れられている
。恒温槽２の？温度は、コンピュータ５によって設定さ
れた温度に、温度制御装置３により制御片されている。In the measuring device of the present invention, the sample is fixed on an AT-cut crystal oscillator cell l, and is kept at a constant temperature I! It is included in 2. Temperature bath 2? The temperature is controlled by a temperature control device 3 to a temperature set by a computer 5.
コンビエータ５で設定する温度を一定の速度で変化させ
ることにより、恒温槽２の温度を一定の速度で変化させ
ることが可能である。By changing the temperature set by the combinator 5 at a constant rate, it is possible to change the temperature of the constant temperature bath 2 at a constant rate.
試料をＡＴカット水晶振動子セルｌ上に固定すると１．
Ａ Ｔカット水晶振動子８の共振周波数および、損失抵
抗値は、測定時の温度での試料の粘弾性を反映したもの
となり、共振周波数及び、損失抵抗値は、インピーダン
ス測定器４を用いて測定される。第３図は本実施例で用
いたインピーダンス測定器のブロックダイアグラムであ
る。信号発生部１０でＡＴカット水晶振動子８の共振周
波数付近の周波数を発生させ、信号分配部１１で信号発
生部１０で得られた信号を２つに分配する。２つに分配
された信号の内、一方はそのまま増幅部ＡＩ２、アッテ
ネータ部Ａ１３、対数増幅部Ａ１４を経て演算部１９に
入る。他方はＡＴカット水晶振動子８を経た後、増幅部
Ｉ３１５、アッテネータＢ１６、対数増幅部ＢＩＴを経
て演算部１９に入る。また、アッテネータ部Ｂ１６から
出てきた信号は、途中、ＡＴカット水晶振動子８を通過
しているため、アッテネータ部Ａ１３から出てきた信号
との間には位相差がある。この位相差は位相差検出部１
８で検出され、演算部１９に入力される。演算部１９で
は入力された信号から・、ＡＴカット水晶振動子８のコ
ンダクタンスおよびサセプタンスを求め、表示部２０に
表示する。When the sample is fixed on the AT cut crystal resonator cell l, 1.
The resonant frequency and loss resistance value of the AT-cut crystal resonator 8 reflect the viscoelasticity of the sample at the temperature at the time of measurement, and the resonant frequency and loss resistance value are measured using the impedance measuring device 4. be done. FIG. 3 is a block diagram of the impedance measuring device used in this example. A signal generator 10 generates a frequency near the resonance frequency of the AT-cut crystal resonator 8, and a signal distributor 11 divides the signal obtained by the signal generator 10 into two. Of the two divided signals, one enters the arithmetic unit 19 as it is through the amplification unit AI2, attenuator unit A13, and logarithmic amplification unit A14. The other signal passes through the AT-cut crystal oscillator 8, and then enters the arithmetic unit 19 via the amplification section I315, attenuator B16, and logarithmic amplification section BIT. Further, since the signal output from the attenuator section B16 passes through the AT-cut crystal resonator 8 on the way, there is a phase difference between the signal and the signal output from the attenuator section A13. This phase difference is determined by the phase difference detection section 1
8 and input to the calculation section 19. The arithmetic unit 19 calculates the conductance and susceptance of the AT-cut crystal resonator 8 from the input signal, and displays them on the display unit 20.
インピーダンス測定は、具体的には、アドミッタンスの
虚数部であるサセプタンスの最大値と最小値を与える周
波数の間に共振周波数があることから、まず最初にサセ
プタンスの最大値、最小値を周波数掃引して求め、この
間の周波数について等間隔の周波数で、コンダクタンス
とサセプタンスの測定を行なった。測定値は、コンダク
タンス及びサセプタンスのデータを円の最小自乗法によ
って処理し１円の直径を求めこの逆数を損失抵抗の値と
した。また、円の中心を求め、この中心点のサセプタン
スの値と同じサセプタンス値を示すような円上の周波数
をサセプタンスと測定周波数の多項式近似より求めこれ
を共振周波数とした。Specifically, in impedance measurement, since there is a resonance frequency between the frequencies that give the maximum and minimum values of susceptance, which is the imaginary part of admittance, first, the maximum and minimum values of susceptance are frequency swept. The conductance and susceptance were measured at equally spaced frequencies between these frequencies. As for the measured values, conductance and susceptance data were processed by the least squares method of circles, and the diameter of one circle was determined, and the reciprocal of this was taken as the value of the loss resistance. Further, the center of the circle was found, and a frequency on the circle that showed the same susceptance value as the susceptance value at this center point was found by polynomial approximation of the susceptance and the measurement frequency, and this was taken as the resonance frequency.
インピーダンス測定およびｔｎｎ低抵抗値共振周波ご女
を求めるための演算の処理は、コンピュータ５によって
自動的に行なわれ、その結果はデイスプレィ６およびプ
リンタフに表示、印刷される。Impedance measurement and arithmetic processing for determining the tnn low resistance value resonance frequency are automatically performed by the computer 5, and the results are displayed and printed on the display 6 and printer.
また、本実施例では、ＡＴカット水晶振動子を検出器と
したが、ＧＴカット水晶振動子や他の圧電材料、例えば
、ＳＡＷデバイスや圧電セラミνり発振子を用いても同
様の測定が可能であることが示されている。Furthermore, in this example, an AT-cut crystal resonator was used as the detector, but similar measurements can be made using a GT-cut crystal resonator or other piezoelectric materials, such as a SAW device or a piezoelectric ceramic oscillator. It has been shown that
次に本計測方法及び装置を用いて、測定を行なった結果
について説明する。Next, the results of measurements performed using this measurement method and apparatus will be explained.
（液晶材料の相転移温度測定への応用）第４図に示す構
造を持つ、ｔｉ品材１（Ｋ２１）を試料とし、温度を２
０〜７０℃まで変化させた場合の損失抵抗値の変化を測
定した結果を第５図（ａ）に、及び共振周（ｆｌｇの変
化を測定した結果を第５図（ｂ）にそれぞれ示す１本実
施例で用いた液晶の液晶から液体への相転移点は、４２
．８℃であるが、その付近の温度において相転移に起因
する応答が現れている（第５図（ａ）Ａ部分、第５図（
ｂ）Ｂ部分）。即ち、本測定法および本測定装置により
、液晶（イ科の相転移温度の測定が可能であることが示
された６
（高分子フィルムの融点測定への応用）高分子フィルム
（ポリエチレンＭａｒＩｅｘ５０）を試料とし測定を行
った結果、液晶材料の場合と同様に高分子フィルムの融
点である１３７℃で相転移に起因する応答が得られた。(Application to measurement of phase transition temperature of liquid crystal materials) Ti material 1 (K21) having the structure shown in Fig. 4 was used as a sample, and the temperature was
Figure 5 (a) shows the results of measuring the change in loss resistance value when changing it from 0 to 70°C, and Figure 5 (b) shows the results of measuring the change in resonance frequency (flg). The phase transition point of the liquid crystal used in this example from liquid crystal to liquid is 42
．． 8°C, but a response due to phase transition appears at a temperature around that temperature (Fig. 5(a) part A, Fig. 5(a)).
b) Part B). In other words, it has been shown that this measurement method and this measurement device can measure the phase transition temperature of liquid crystals (Application to melting point measurement of polymer films). As a result of measurements made using the sample, a response due to phase transition was obtained at 137° C., which is the melting point of the polymer film, as in the case of liquid crystal materials.
即ち、本測定法および本測定装置により、高分子フィル
ムの融点の測定が可能であることが示された。That is, it was shown that the melting point of a polymer film can be measured by this measuring method and this measuring device.
（累積しＢｉｉの相転移温度測定への応用）アラキシン
酸カドミウム塩をＬＢ法により水晶振動子上に累積させ
た後、液晶材料の場合と同様に測定を行なった結果、相
転移点である７８℃付近で相転移に起因する応答が得ら
れた。即ち、本測定法及び本測定装置により、累積ＬＢ
膜の相転移点の測定が可能であることが示された。(Application to accumulation and measurement of phase transition temperature of Bii) After accumulating cadmium araxinate on a crystal resonator by the LB method, measurement was carried out in the same manner as in the case of liquid crystal materials. As a result, the phase transition temperature was 78 A response due to phase transition was obtained near °C. That is, by this measurement method and this measurement device, the cumulative LB
It was shown that it is possible to measure the phase transition point of a film.
［発明の効果１
本発明の熱特性計測方法及び装置により、従来の方法で
は困難であった微少量の試料や、液晶材料、ＬＢ膜など
の試料についても熱特性の測定が可能となった。[Effect of the Invention 1] The method and apparatus for measuring thermal properties of the present invention make it possible to measure the thermal properties of very small samples, liquid crystal materials, LB films, and other samples, which was difficult with conventional methods.
第１図は本発明の熱特性計測装置の模式図、第２図はＡ
Ｔカット水晶振動子セルの構造を示す説明図、第３図は
本実施例で用いたインピーダンス測定器のブロックダイ
アグラム、第４図は本実施例で用いた液晶材料の１１４
造式の説明図、第５図（ａ）は液晶材料を試料とした場
合の温度による損失抵抗の変化を示す説明図、第５図（
ｂ）は液晶材料を試料とした場合の温度による共振周波
数の変化を示す説明図である。
１・・・ＡＴカット水晶振動子セル
４・・・インピーダンス測定器
５・・・コンピュータ
８・・・ＡＴカット水晶振動子
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助第２図
ＡＴカット水晶１后勤子セルの構造を示す説明図１（方
式）
昭和６３年１２ 月２８
へ
事件の表ボ
昭和６３年 特許願 ｆｆ１２４２９９３号発明の名称
熱特性計測方法及び装置
補正をする者
事件との関係 特許出願人
東京都江東区亀戸６丁１”１３１番１号（２３２） ４
ｚ イコｆ４７ 工’Ｊ、 ｎ Ｋ 会社代表取締役
原 禮之助Figure 1 is a schematic diagram of the thermal characteristic measuring device of the present invention, and Figure 2 is A
An explanatory diagram showing the structure of a T-cut crystal resonator cell, FIG. 3 is a block diagram of the impedance measuring device used in this example, and FIG.
Figure 5(a) is an explanatory diagram of the construction formula, and Figure 5(a) is an explanatory diagram showing the change in loss resistance due to temperature when a liquid crystal material is used as a sample.
b) is an explanatory diagram showing changes in resonance frequency depending on temperature when a liquid crystal material is used as a sample. 1...AT-cut crystal oscillator cell 4...Impedance measuring device 5...Computer 8...AT-cut crystal oscillator and above Applicant: Seiko Electronic Industries Co., Ltd. Agent Patent attorney: Keisuke Hayashi Figure 2 Explanatory diagram 1 (method) showing the structure of an AT-cut crystal 1 cell Relationship: Patent applicant No. 131-1, 6-1 Kameido, Koto-ku, Tokyo (232) 4
z Ico f47 Engineering'J, nK Company Representative Director
Reinosuke Hara
Claims (2)
料の温度を連続的に変化させていき、圧電素子の共振周
波数あるいは、損失抵抗値を連続的に測定して試料の粘
弾性変化を検出することにより、試料の熱特性の計測を
行なうことを特徴とする熱特性計測方法。(1) At least one side of the piezoelectric element is brought into contact with the sample, the temperature of the sample is continuously changed, and the resonant frequency or loss resistance value of the piezoelectric element is continuously measured to detect changes in the viscoelasticity of the sample. A thermal property measurement method characterized by measuring the thermal properties of a sample.
定する装置、あるいは、圧電素子の損失抵抗値を測定す
る装置とから構成され、圧電素子の少なくとも片面を試
料と接触させ、試料の温度を連続的に変化させていき、
圧電素子の共振周波数あるいは、損失抵抗値を連続的に
測定して試料の粘弾性変化を検出することにより、試料
の熱特性の計測を行なうことを特徴とする熱特性計測装
置。(2) Consisting of at least a piezoelectric element and a device that measures the resonant frequency of the piezoelectric element, or a device that measures the loss resistance value of the piezoelectric element, at least one side of the piezoelectric element is brought into contact with the sample, and the temperature of the sample is continuously maintained. By changing the
1. A thermal property measuring device that measures the thermal properties of a sample by continuously measuring the resonant frequency or loss resistance value of a piezoelectric element and detecting changes in viscoelasticity of the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242993A JPH0682106B2 (en) | 1988-09-28 | 1988-09-28 | Thermal characteristic measuring method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63242993A JPH0682106B2 (en) | 1988-09-28 | 1988-09-28 | Thermal characteristic measuring method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0290050A true JPH0290050A (en) | 1990-03-29 |
| JPH0682106B2 JPH0682106B2 (en) | 1994-10-19 |
Family
ID=17097297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63242993A Expired - Lifetime JPH0682106B2 (en) | 1988-09-28 | 1988-09-28 | Thermal characteristic measuring method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682106B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003042924A (en) * | 2001-07-31 | 2003-02-13 | National Institute Of Advanced Industrial & Technology | Method and instrument for measuring viscosity |
| JP2003532056A (en) * | 2000-04-05 | 2003-10-28 | ザ チャールズ スターク ドレイパー ラボラトリー インク | Apparatus and method for measuring mass of substance |
| JP2011203246A (en) * | 2010-03-03 | 2011-10-13 | Noboru Wakatsuki | Viscoelasticity evaluation device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917790A (en) * | 1972-06-05 | 1974-02-16 | ||
| JPS5050976A (en) * | 1973-07-30 | 1975-05-07 | ||
| JPS60170741A (en) * | 1984-02-16 | 1985-09-04 | Fuji Elelctrochem Co Ltd | Viscosity sensor |
| JPS61100626A (en) * | 1984-10-24 | 1986-05-19 | Yokogawa Hokushin Electric Corp | Vibration type sensor |
| JPS6275331A (en) * | 1985-09-27 | 1987-04-07 | カウンシル フオ ミネラル テクノロジ | Method and device for measuring or monitoring density or viscoelasticity of liquid or slurry, emulsion or dispersion |
-
1988
- 1988-09-28 JP JP63242993A patent/JPH0682106B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917790A (en) * | 1972-06-05 | 1974-02-16 | ||
| JPS5050976A (en) * | 1973-07-30 | 1975-05-07 | ||
| JPS60170741A (en) * | 1984-02-16 | 1985-09-04 | Fuji Elelctrochem Co Ltd | Viscosity sensor |
| JPS61100626A (en) * | 1984-10-24 | 1986-05-19 | Yokogawa Hokushin Electric Corp | Vibration type sensor |
| JPS6275331A (en) * | 1985-09-27 | 1987-04-07 | カウンシル フオ ミネラル テクノロジ | Method and device for measuring or monitoring density or viscoelasticity of liquid or slurry, emulsion or dispersion |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003532056A (en) * | 2000-04-05 | 2003-10-28 | ザ チャールズ スターク ドレイパー ラボラトリー インク | Apparatus and method for measuring mass of substance |
| US7171844B2 (en) | 2000-04-05 | 2007-02-06 | The Charles Stark Draper Laboratory, Inc. | Apparatus and method for measuring the mass of a substance |
| JP2003042924A (en) * | 2001-07-31 | 2003-02-13 | National Institute Of Advanced Industrial & Technology | Method and instrument for measuring viscosity |
| JP2011203246A (en) * | 2010-03-03 | 2011-10-13 | Noboru Wakatsuki | Viscoelasticity evaluation device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0682106B2 (en) | 1994-10-19 |
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