JPH0280554A - Formation of film of metallic silicide of high melting point - Google Patents
Formation of film of metallic silicide of high melting pointInfo
- Publication number
- JPH0280554A JPH0280554A JP22870288A JP22870288A JPH0280554A JP H0280554 A JPH0280554 A JP H0280554A JP 22870288 A JP22870288 A JP 22870288A JP 22870288 A JP22870288 A JP 22870288A JP H0280554 A JPH0280554 A JP H0280554A
- Authority
- JP
- Japan
- Prior art keywords
- film
- melting point
- high melting
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000002844 melting Methods 0.000 title claims abstract description 16
- 230000008018 melting Effects 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title claims abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 3
- 239000010408 film Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 5
- 230000008020 evaporation Effects 0.000 abstract description 4
- 230000001133 acceleration Effects 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 6
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリサイド薄膜の形成法に係り、特に集積回路
の配線材料に好適な低抵抗シリサイド薄膜を低温で形成
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a silicide thin film, and more particularly to a method for forming a low-resistance silicide thin film suitable as a wiring material for integrated circuits at a low temperature.
従来、５ｉＬＳＩの接合形成や配線用の高融点シリサイ
ド膜の形成法は大別して次の２種類がある。１つは金属
をＳｉ上に堆積してからアニールにより固相反応させる
方法である（固相反応法）。Conventionally, methods for forming 5iLSI junctions and forming high-melting point silicide films for wiring can be broadly classified into the following two types. One is a method in which a metal is deposited on Si and then subjected to a solid phase reaction by annealing (solid phase reaction method).
もう１つは金属とＳｉの混合物を堆積しアニールによっ
て合金化する方法である（合金法）、混合物は金属とＳ
ｉの２つのソースまたはターゲットから同時に蒸着やス
パッタリングする方法、合金ターゲットからのスパッタ
、ＣＶＤ法などによって堆積される。The other method is to deposit a mixture of metal and Si and alloy it by annealing (alloy method).
It is deposited by simultaneous evaporation or sputtering from two sources or targets, sputtering from an alloy target, CVD method, or the like.
なお、この種の方法として関連するものには例えば特開
昭６２−１３８１９号やジャーナルオブバキュームサイ
エンスアンドテクノロジー１７（４）第７７５頁から第
７９２頁（Ｊ、Ｖａｃ、Ｓｃｉ、＆ Ｔｅｃｈ、。Related methods of this type include, for example, Japanese Patent Application Laid-Open No. 13819/1983 and Journal of Vacuum Science and Technology 17(4), pages 775 to 792 (J. Vac, Sci, & Tech.
１７（４）ρｐ７７５−７９２（１９８０））において
論じられている。17(4) p775-792 (1980)).
上記従来技術では高融点金属元素をＭとした場合、ＭＳ
ｉｚの組成比では膜を６００〜８００℃の温度で形成で
きるが、より低抵抗のＭ５Ｓｉ３の組成比を有するシリ
サイド薄膜の形成には１０００〜１６００℃の高温が必
要であった。In the above conventional technology, when the high melting point metal element is M, MS
Although a film can be formed at a temperature of 600 to 800°C with a composition ratio of iz, a high temperature of 1000 to 1600°C is required to form a silicide thin film having a composition ratio of M5Si3 with lower resistance.
本発明の目的は低温でＭＩＳＳｉｓの組成のシリサイド
薄膜を形成することにある。An object of the present invention is to form a silicide thin film having a composition of MISSis at low temperatures.
上記目的は、シリコンソースをクラスタイオンとして活
性化させて蒸発させ、金属蒸気と同時に所定温度に加熱
した被膜形成基板に蒸着することにより、達成される。The above object is achieved by activating the silicon source as cluster ions, evaporating them, and simultaneously depositing them on a film-forming substrate heated to a predetermined temperature as a metal vapor.
（作用〕
加速されたシリコンのクラスタイオンビームは、一原子
当り数ｅＶのエネルギーを有し、高融点金属蒸気とのシ
リサイド形成反応を活性化させることができる。それに
よって被膜形成基板が低温すなわち、８００℃以下でも
高融点金属Ｍとシリコンは反応しＭ５Ｓｉ３の組成比の
シリサイドを形成できる。(Effect) The accelerated silicon cluster ion beam has an energy of several eV per atom and can activate the silicide formation reaction with the high melting point metal vapor.Thereby, the film forming substrate is at a low temperature, i.e. Even at temperatures below 800° C., the high melting point metal M and silicon react to form silicide having a composition ratio of M5Si3.
以下、本発明の実施例を図面により詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
実施例１：第１図は本発明に用いたクラスタイオンビー
ム蒸着装置の模式図を示す。膜を形成する成長室１１は
ステンレス製でターボ分子ポンプとロータリポンプとか
ら成る排気系１２に接続され、約１０−７Ｔｏｒｒまで
排気される。被膜形成基板２２は０．１ μｍ厚の熱
酸化膜を形成したシリコンウェハである。被膜形成基板
２２はタンタルヒータ２１により所定温度に加熱、保持
される。蒸着物質のシリコンソース３１（比抵抗２にΩ
・ａ＝）はグラファイト製のるつぼ４１に充填される。Example 1: FIG. 1 shows a schematic diagram of a cluster ion beam evaporation apparatus used in the present invention. A growth chamber 11 in which a film is formed is made of stainless steel and connected to an exhaust system 12 consisting of a turbo molecular pump and a rotary pump, and is evacuated to approximately 10-7 Torr. The film-forming substrate 22 is a silicon wafer on which a thermally oxidized film with a thickness of 0.1 μm is formed. The film-forming substrate 22 is heated and maintained at a predetermined temperature by the tantalum heater 21. Silicon source 31 of vapor deposition material (specific resistance 2Ω
-a=) is filled into a crucible 41 made of graphite.
るつぼ４１はタングステンフィラメント４２から発生す
る電子の衝撃を受は加熱される。投入電力は２．０
ｋＷ、るつぼの外壁温度は１９５０℃である。シリコン
ソース３１は融解、蒸発し、直径２閣のノズル４３から
噴出し、シリコン蒸気は断熱膨張作用によりシリコンク
ラスタ６１を形成する。The crucible 41 is heated by the impact of electrons generated from the tungsten filament 42. Input power is 2.0
kW, and the temperature of the outer wall of the crucible is 1950°C. The silicon source 31 is melted, evaporated, and ejected from a nozzle 43 with a diameter of 2 mm, and the silicon vapor forms silicon clusters 61 by adiabatic expansion.
クラスタ６１はタングステンフィラメント４５と電子を
引き出すグリッド４４から成るイオン化機構部において
電子照射を受け、イオン化される。The cluster 61 is ionized by electron irradiation in an ionization mechanism comprising a tungsten filament 45 and a grid 44 for extracting electrons.
タングステンフィラメント４５の電流は２２Ａ、グリッ
ド４４に印加される電圧は１ｋＶである。The current of the tungsten filament 45 is 22 A, and the voltage applied to the grid 44 is 1 kV.
なお、フィラメント４５からグリッド４４に流れる電流
は２００ｍＡである。イオン化したクラスタはるつぼ４
１と加速電極４６の間に印加されるＯ〜１０ｋＶの電圧
により加速され基板２２上に入射する。高融点金属のタ
ングステン（純度９９・９９８％） ３２はフィラメン
ト５１から発生する電子ビーム５２により加熱されタン
グステン蒸気６２として基板２２へ到達する。シリコン
とタングステンの蒸着量は各々、膜厚モニタ７１゜７２
によりモニタされる。Note that the current flowing from the filament 45 to the grid 44 is 200 mA. Ionized cluster crucible 4
The light is accelerated by a voltage of 0 to 10 kV applied between the acceleration electrode 46 and the acceleration electrode 46 and is incident on the substrate 22 . Tungsten (purity 99.998%) 32, which is a high melting point metal, is heated by the electron beam 52 generated from the filament 51 and reaches the substrate 22 as tungsten vapor 62. The amount of silicon and tungsten deposited was measured using a film thickness monitor of 71° and 72°, respectively.
monitored by
以上の装置で基板温度６００℃でタングステンシリサイ
ド薄膜を４００ｎｍ形成した。加速電極４６の電圧は０
，２，４，６，８．１０ｋＶである。形成した膜の組成
は蒸着量の比と同じですべてＷｓＳｉδであった。第２
図は堆積膜の抵抗率を４探針法で測定した結果である。Using the above apparatus, a 400 nm thick tungsten silicide thin film was formed at a substrate temperature of 600°C. The voltage of the accelerating electrode 46 is 0
, 2, 4, 6, 8.10kV. The composition of the formed film was the same as the ratio of the amount of evaporation, and was all WsSiδ. Second
The figure shows the results of measuring the resistivity of the deposited film using the four-probe method.
膜の抵抗率は加速電圧８ｋＶで最小値の１０μΩ・国と
なった。The resistivity of the film reached its minimum value of 10 μΩ·Ω at an accelerating voltage of 8 kV.
これは従来法で形成されるＷδＳｉｚ膜の抵抗率１００
μΩ・儂より約１桁小さい。この膜の化学的耐久性を調
べた。処理条件を第１表に示す。薬品に浸した時間は全
て３０分間である。試料形状は１０ＩＩＩｌ角である。This is the resistivity of the WδSiz film formed by the conventional method, which is 100.
μΩ・About one order of magnitude smaller than mine. The chemical durability of this film was investigated. The processing conditions are shown in Table 1. The immersion time in all chemicals was 30 minutes. The sample shape is 10IIIl square.
薬品処理前後の表面状態を走査型電子顕微鏡で観察した
。その結果、表面状態に変化は見られなかった。さらに
膜の抵抗率を薬品処理後、測定した結果、抵抗率は変化
していなかった。The surface condition before and after chemical treatment was observed using a scanning electron microscope. As a result, no change was observed in the surface condition. Furthermore, the resistivity of the film was measured after chemical treatment, and as a result, the resistivity did not change.
次に異なる基板温度でＷＩＳＳｉａを形成した。加速電
圧は８ｋＶである。第３図に基板温度と膜の抵抗率およ
び膜のストレスの関係を示す。これより基板温度が６０
０℃以上で抵抗率は約１０Ω。WISSia was then formed at different substrate temperatures. Accelerating voltage is 8kV. FIG. 3 shows the relationship between substrate temperature, film resistivity, and film stress. From this, the substrate temperature is 60
Resistivity is approximately 10Ω at temperatures above 0°C.
−となり、ストレスも−Ｉ Ｘ １０−１０〜Ｉ Ｘ
１Ｏ−１０ｄｙｎｅ／ａｆとなる。これより、この温度
範囲でストレスの小さい低抵抗シリサイド膜を得られる
ことがわかる。-, stress also -I X 10-10~I
It becomes 10-10 dyne/af. This shows that a low-resistance silicide film with low stress can be obtained within this temperature range.
実施例２：第４図はシリコンビーム中にタングステン製
のメツシュ１０１を設置した装置の概略図である。メツ
シュ１０１には２０Ａの電流を流し加熱した。クラスタ
イオンビーム法で生成したシリコンビームはこのメツシ
ュ１０１に到達し。Embodiment 2: FIG. 4 is a schematic diagram of an apparatus in which a tungsten mesh 101 is installed in a silicon beam. A current of 20 A was applied to the mesh 101 to heat it. A silicon beam generated by the cluster ion beam method reaches this mesh 101.
その一部がメツシュ１０１に付着する。メツシュ１０１
はシリサイド化され、タングステンシリサイド蒸気９１
を生成し、被着基板２２上に到達し、タングステン蒸気
９２とともにシリサイド膜を形成する。基板温度６００
℃で形成したタングステンシリサイドの成分は９０％以
上がＷδＳｉａであった。膜の化学的特性や付着力は二
元蒸着法の場合と同様であった。A part of it adheres to the mesh 101. mesh 101
is silicided and tungsten silicide vapor 91
is generated, reaches the deposition substrate 22, and forms a silicide film together with the tungsten vapor 92. Substrate temperature 600
The tungsten silicide formed at a temperature of 90% or more was WδSia. The chemical properties and adhesion of the film were similar to those of the binary deposition method.
なお、第１表は薬品処理条件の一覧表である。Note that Table 1 is a list of chemical treatment conditions.
第 １ 表
〔発明の効果〕
本発明によれば蒸着物質をイオン化することによって、
基板上での化学反応を活性化できるので低温（６００℃
）でＭ５Ｓｉ３あるいはＭａＳｉｚ（Ｍは高融点金属）
を主成分とするシリサイド薄膜を形成できる効果がある
。Table 1 [Effects of the Invention] According to the present invention, by ionizing the vapor deposition material,
Low temperature (600℃) can activate chemical reactions on the substrate.
) with M5Si3 or MaSiz (M is a high melting point metal)
It has the effect of forming a silicide thin film containing as the main component.
第１図は本発明の一実施例の装置の断面図、第２図はイ
オン化クラスタの加速電圧と堆積した膜の抵抗率との関
係図、第３図は被膜形成基板温度と形成した膜の抵抗率
との関係図、第４図は実施例の装置の断面図である。
１１・・・真空容器、１２・・・排気装置、２１・・・
ヒーター ２２・・・被膜形成基板、３１・・・シリコ
ンソース、３２・・・タングステンソース、４１・・・
るつぼ、４２・タングステンフィラメント、４３・・・
ノズル、４４・・・グリッド、４５・・・タングステン
フィラメント、４６・・・加速電極、５１・・・フィラ
メント、５２・・・電子ビーム、６１・・・シリコンク
ラスタ、６２・・・タングステン蒸気、７１・・・膜厚
モニタ、７２・・・膜厚モニタ、９１・・・タングステ
ンシリサイド蒸気、９２・・・タングステン蒸気、１０
１・・・メツシュ。
第１図
第
区
Ｏ
力０速２醍ａ（ＫＶ）
第
図FIG. 1 is a cross-sectional view of an apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between the accelerating voltage of ionized clusters and the resistivity of the deposited film, and FIG. FIG. 4 is a sectional view of the device of the embodiment. 11... Vacuum container, 12... Exhaust device, 21...
Heater 22... Film forming substrate, 31... Silicon source, 32... Tungsten source, 41...
Crucible, 42・Tungsten filament, 43...
Nozzle, 44... Grid, 45... Tungsten filament, 46... Accelerating electrode, 51... Filament, 52... Electron beam, 61... Silicon cluster, 62... Tungsten vapor, 71 ... Film thickness monitor, 72 ... Film thickness monitor, 91 ... Tungsten silicide vapor, 92 ... Tungsten vapor, 10
1... Metshu. Fig. 1 Section O Force 0 speed 2 Daihatsu a (KV) Fig.
Claims (1)
Ｍｏ、Ｃｒ、Ｔａ、Ｎｂ、Ｖ、Ｈｆ、Ｚｒ、Ｔｉのうち
の一種）を主成分とする薄膜の形成法において、シリコ
ンのクラスタイオンビームと金属蒸気を同時に被膜形成
基板上に蒸着させることを特徴とする高融点金属シリサ
イド膜の形成方法。 ２、Ｍ＿５Ｓｉ＿３あるいはＭ＿５Ｓｉ＿２（ＭはＷ、
Ｍｏ、Ｃｒ、Ｔａ、Ｎｂ、Ｖ、Ｈｆ、Ｚｒ、Ｔｉのうち
の一種）を主成分とする薄膜の形成法において、シリコ
ンのクラスタイオンビームを加熱した金属に照射し、そ
こから金属シリサイドを被膜形成基板上に蒸着すること
を特徴とする高融点金属シリサイド膜の形成方法。 ３、特許請求の範囲第２項において、シリコンのクラス
タイオンビームを照射する金属がメッシュ状、多数の孔
を有する板状、多数並んだ線状としたことを特徴とする
高融点金属シリサイド膜の形成方法。 ４、特許請求の範囲第２項において、シリコンのクラス
タイオンビームを照射する金属に電流を流し、加熱する
ことを特徴とする高融点金属シリサイド膜の形成方法。 ５、特許請求の範囲第１項または第２項において、被膜
形成基板を３００〜８００℃に加熱することを特徴とす
る高融点金属シリサイド膜の形成方法。[Claims] 1. M_5Si_3 or M_5Si_2 (M is W,
In a method for forming a thin film whose main component is Mo, Cr, Ta, Nb, V, Hf, Zr, or Ti), a silicon cluster ion beam and a metal vapor are simultaneously deposited on a film forming substrate. Characteristic method of forming a high melting point metal silicide film. 2, M_5Si_3 or M_5Si_2 (M is W,
In the method of forming a thin film whose main component is a type of Mo, Cr, Ta, Nb, V, Hf, Zr, or Ti, a silicon cluster ion beam is irradiated onto a heated metal, and then a metal silicide is coated from there. A method for forming a high melting point metal silicide film, the method comprising vapor depositing it on a formation substrate. 3. Claim 2 provides a high melting point metal silicide film characterized in that the metal to which the silicon cluster ion beam is irradiated is in the form of a mesh, a plate having a large number of holes, or a line in which a large number of holes are lined up. Formation method. 4. A method for forming a high melting point metal silicide film according to claim 2, which comprises heating the metal by passing an electric current through the metal to be irradiated with the silicon cluster ion beam. 5. A method for forming a high melting point metal silicide film according to claim 1 or 2, characterized in that the film-forming substrate is heated to 300 to 800°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22870288A JPH0280554A (en) | 1988-09-14 | 1988-09-14 | Formation of film of metallic silicide of high melting point |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22870288A JPH0280554A (en) | 1988-09-14 | 1988-09-14 | Formation of film of metallic silicide of high melting point |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0280554A true JPH0280554A (en) | 1990-03-20 |
Family
ID=16880464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22870288A Pending JPH0280554A (en) | 1988-09-14 | 1988-09-14 | Formation of film of metallic silicide of high melting point |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0280554A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009107669A1 (en) * | 2008-02-28 | 2009-09-03 | 独立行政法人産業技術総合研究所 | Thin film of metal silicon compound and process for producing the thin film of metal silicon compound |
| US9275866B2 (en) | 2014-05-15 | 2016-03-01 | International Business Machines Corporation | Gas cluster reactor for anisotropic film growth |
| CN112981208A (en) * | 2021-02-03 | 2021-06-18 | 上海交通大学 | Light refractory high-temperature-resistant eutectic high-entropy alloy and preparation method thereof |
-
1988
- 1988-09-14 JP JP22870288A patent/JPH0280554A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009107669A1 (en) * | 2008-02-28 | 2009-09-03 | 独立行政法人産業技術総合研究所 | Thin film of metal silicon compound and process for producing the thin film of metal silicon compound |
| JP2010093221A (en) * | 2008-02-28 | 2010-04-22 | National Institute Of Advanced Industrial Science & Technology | Metal silicon compound thin film and method of manufacturing the same |
| US8367030B2 (en) | 2008-02-28 | 2013-02-05 | National Institute Of Advanced Industrial Science And Technology | Thin film of metal-silicon compound and process for producing the thin film of the metal-silicon compound |
| US9275866B2 (en) | 2014-05-15 | 2016-03-01 | International Business Machines Corporation | Gas cluster reactor for anisotropic film growth |
| CN112981208A (en) * | 2021-02-03 | 2021-06-18 | 上海交通大学 | Light refractory high-temperature-resistant eutectic high-entropy alloy and preparation method thereof |
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