JPH02776B2 - - Google Patents
Info
- Publication number
- JPH02776B2 JPH02776B2 JP55063479A JP6347980A JPH02776B2 JP H02776 B2 JPH02776 B2 JP H02776B2 JP 55063479 A JP55063479 A JP 55063479A JP 6347980 A JP6347980 A JP 6347980A JP H02776 B2 JPH02776 B2 JP H02776B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- laser light
- transparent
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 150000002894 organic compounds Chemical class 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 89
- 239000000975 dye Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- 238000009987 spinning Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- YCUVUDODLRLVIC-UHFFFAOYSA-N Sudan black B Chemical group C1=CC(=C23)NC(C)(C)NC2=CC=CC3=C1N=NC(C1=CC=CC=C11)=CC=C1N=NC1=CC=CC=C1 YCUVUDODLRLVIC-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 125000005287 vanadyl group Chemical group 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- -1 For example Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 241000243142 Porifera Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- MDOWYKFAQVNQJR-UHFFFAOYSA-N [4-[(2-chlorophenyl)-(4-ethylimino-3-methylcyclohexa-2,5-dien-1-ylidene)methyl]-2-methylphenyl]-ethylazanium;chloride Chemical compound Cl.C1=C(C)C(NCC)=CC=C1C(C=1C(=CC=CC=1)Cl)=C1C=C(C)C(=NCC)C=C1 MDOWYKFAQVNQJR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 235000012461 sponges Nutrition 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
- G11B7/2575—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
本発明は、少なくとも1側面に以下に定義する
ような反射防止コーテイングを備え記録すべき情
報に従つて調節されたレーザ光によつて情報ビツ
トを書込むことができる基板を有し、レーザ光に
よつて書込み読出しすることができる情報記録素
子に関するものである。反射防止コーテイングは
適切なレーザ光を反射する反射層、適切なレーザ
光を吸収する吸収層、およびこれら二層間に設け
られ適切なレーザ光を透過する透明層を有する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a substrate having an anti-reflection coating as defined below on at least one side and on which information bits can be written by means of a laser beam adjusted according to the information to be recorded. The present invention relates to an information recording element that has a laser beam and can be written and read using a laser beam. The anti-reflective coating has a reflective layer that reflects appropriate laser light, an absorbing layer that absorbs appropriate laser light, and a transparent layer interposed between the two layers that transmits appropriate laser light.
記録の際、情報記録素子の吸収層に物理的変化
を起こすに十分な大きさのため反射防止に対する
条件を満足しない値と、この効果を生み出すには
低すぎる値との間で、レーザ光の強度が変化する
ようにレーザ光を調節する。 During recording, there is a difference between a value that is large enough to cause a physical change in the absorption layer of the information recording element and therefore does not satisfy the conditions for antireflection, and a value that is too low to produce this effect. Adjust the laser light to vary its intensity.
上に述べたタイプの情報記録素子は、西独国特
許出願第2757737号(米国出願第782032号、1977
年3月28日;オランダ国特許出願第7713230号)
に開示されている。 Information recording elements of the type mentioned above are described in West German Patent Application No. 2757737 (US Application No. 782032, 1977).
(March 28, 2016; Dutch Patent Application No. 7713230)
has been disclosed.
従来の情報記録素子は反射層(例えばアルミニ
ウムから成る)を備えている基板(例えばガラス
製)から組立てられる。二酸化珪素の透明層を反
射層上に設け、この上部に吸収層を設ける。この
吸収層は染料または金属で形成することができ
る。染料から成る場合、染料の光学濃度は情報を
書込む間局部的に変化する。これに対して吸収層
が金属から成る場合、そこに空洞が焼付けられ
る。反射層、透明層および吸収層は一緒に反射防
止コーテイングを形成し、これら3層は反射防止
条件を満足するように物質の厚さおよび性質を相
互に一致させている。記録の際レーザ光は反射し
ない。レーザ光の全エネルギーは殆んど反射防止
コーテイングの吸収層に吸収される。 Conventional information storage elements are assembled from a substrate (for example made of glass) which is provided with a reflective layer (for example made of aluminum). A transparent layer of silicon dioxide is provided on the reflective layer and an absorbing layer is provided on top of this. This absorbing layer can be made of dye or metal. In the case of a dye, the optical density of the dye changes locally during the writing of information. On the other hand, if the absorption layer is made of metal, cavities are burned into it. The reflective layer, the transparent layer and the absorbing layer together form an anti-reflective coating, and these three layers match each other in material thickness and properties to satisfy the anti-reflective requirements. Laser light is not reflected during recording. Almost all the energy of the laser light is absorbed by the absorption layer of the anti-reflection coating.
本発明の目的は従来の情報記録素子をさらに改
良することにある。本発明の記録素子は情報を書
き込む間に印加するエネルギーが反射防止コーテ
イングの吸収層にできるだけ完全に吸収されるだ
けでなく、物理的または化学的変化を吸収層に起
こす必要がある領域にできるだけ多く集中させる
ことを確実にする処理が取られているので、上に
述べた従来の素子よりも感度が高い。これは、よ
り低い強度(または同一の強度を用いる場合はよ
り早い速度で)のレーザ光を用いて情報記録素子
に情報を書込めることを意味する。 An object of the present invention is to further improve conventional information recording elements. The recording element of the invention ensures that the energy applied during writing of information is not only absorbed as completely as possible in the absorption layer of the anti-reflection coating, but also as much as possible in the areas where it is necessary to cause physical or chemical changes in the absorption layer. Because steps have been taken to ensure concentration, the sensitivity is higher than the conventional elements described above. This means that information can be written to the information recording element using laser light of lower intensity (or faster speed if the same intensity is used).
本発明は、レーザ光により情報を書込む際に印
加するエネルギーの多少の部分が熱伝導によつて
透明層を介して放出される事実を認知したことに
基づく。このエネルギーの放出部分は吸収層の物
理的または化学的変化を起こすには殆ど役立たな
い。透明層が一層小さい範囲まで熱を伝える物質
で作られている場合、レーザ光の全照射エネルギ
ーの一層大きい部分が所望の物理的変化を起こす
のに利用される。西独国特許出願第2812868号の
記載と比較して、透明層と反射層が損なわれるの
を防ぐため透明層における迅速な熱放出を行う処
置を講じる必要はないと思われる。 The invention is based on the recognition of the fact that some portion of the energy applied when writing information with laser light is emitted through the transparent layer by thermal conduction. This emitted portion of energy does little to cause physical or chemical changes in the absorbing layer. If the transparent layer is made of a material that conducts heat over a smaller area, a larger portion of the total irradiation energy of the laser light is utilized to cause the desired physical change. Compared to the description in German Patent Application No. 2812868, it does not seem necessary to take measures for rapid heat release in the transparent layer in order to prevent the transparent layer and the reflective layer from being damaged.
また、本発明は序文に述べたような情報記録素
子に関するものであり、透明層が室温にて
0.7W/mK以下の熱伝導率を有し適切なレーザ
光を透過する有機化合物を含有することを特徴と
する。 Furthermore, the present invention relates to an information recording element as described in the preface, in which the transparent layer is formed at room temperature.
It is characterized by containing an organic compound that has a thermal conductivity of 0.7 W/mK or less and transmits appropriate laser light.
一般に、有機化合物はこれまで用いられた二酸
化珪素の熱伝導率の10分の一以下の熱伝導率であ
る。適当な有機化合物は、PVC、ポリエステル、
ポリエーテル、ポリオレフインのような重合体化
合物である。特にアクリレートによる溶媒を含ま
ないラツカーのような光硬化ラツカーが有用であ
る。光硬化ラツカーの例として同一の出願人によ
るオランダ国特許出願第7611395号(PHN8576)
に記載がある。有機化合物をスピンニング、スパ
ツタリング、CVD(化学蒸着)等によつてデポジ
ツトさせることができる。大多数のポリマーはス
ピンニングによつて堆積させる。あるいは、照射
したレーザ光を透過する有機染料を有機化合物と
してうまく使用できる。通常有機染料を蒸着によ
つてデポジツトできる。ダイオードレーザ光
(800〜870mm)を用いる場合、蒸着したフタルシ
アニン(C32H18N8)またはセトシアニンを透明
中間層として使用すると満足な結果が得られる。 Generally, organic compounds have a thermal conductivity that is one-tenth or less of that of silicon dioxide, which has been used so far. Suitable organic compounds include PVC, polyester,
Polymeric compounds such as polyethers and polyolefins. Especially useful are photocurable lacquers, such as acrylate-based solventless lacquers. Dutch Patent Application No. 7611395 (PHN8576) by the same applicant as an example of a photocurable lacquer
There is a description in . Organic compounds can be deposited by spinning, sputtering, CVD (chemical vapor deposition), and the like. Most polymers are deposited by spinning. Alternatively, organic dyes that transmit the applied laser light can be successfully used as organic compounds. Usually organic dyes can be deposited by vapor deposition. When using diode laser light (800-870 mm), satisfactory results are obtained using vapor-deposited phthalcyanine ( C32H18N8 ) or cetocyanine as a transparent interlayer .
情報記録素子は反射光で読出される。読出す
際、反射防止の条件が吸収層の物理的または化学
的変化が生じた領域において満足なものではない
ので、入射レーザ光の反射が起こる。この反射し
たレーザ光は検出できる。本発明以前には吸収層
はできるだけ基板から離して設けていた。すなわ
ち、反射防止コーテイングの反射層を基板と接触
するように設けていた。しかし、反射防止コーテ
イングの吸収層をできるだけ基板に接して設ける
場合、特に適当な例の情報記録素子が得られる。
この場合情報記録素子は基板を介して−反射で−
読出す必要がある。次に当然、基板は使用するレ
ーザ光を透過する必要がある。本例−吸収層が金
属製である場合も−によつて満足な結果が得られ
る事実は以外なことである。ホールを吸収層に機
械的に作る場合、吸収層が基板と透過層との間に
囲まれているので、金属の除去が困難であること
が予想される。しかし、実際には顕著な困難には
出会わない。本例は、情報記録素子の外部損傷が
吸収層上にレーザ光を集束する目的物の焦点距離
の外側にある利点を有する。以下、図面につき本
発明の実施例を詳細に説明する。 The information recording element is read by reflected light. During readout, reflection of the incident laser light occurs because the antireflection conditions are not satisfactory in areas where physical or chemical changes have occurred in the absorbing layer. This reflected laser light can be detected. Prior to the present invention, the absorbing layer was placed as far away from the substrate as possible. That is, a reflective layer of antireflection coating was provided in contact with the substrate. However, a particularly suitable example of an information recording element is obtained if the absorbing layer of the antireflection coating is provided as close to the substrate as possible.
In this case, the information recording element is reflected through the substrate.
It is necessary to read it. Next, of course, the substrate must be transparent to the laser light used. The fact that this example - also when the absorbing layer is made of metal - gives satisfactory results is surprising. If holes are created mechanically in the absorption layer, it is expected that metal removal will be difficult because the absorption layer is enclosed between the substrate and the transmission layer. However, in practice no significant difficulties are encountered. This example has the advantage that external damage to the information recording element is outside the focal length of the object that focuses the laser light onto the absorption layer. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第1図において、情報がすでに入つている参考
例の情報記録素子を示している。Sは基板を示
す。反射防止コーテイングは反射層R、透明層T
および吸収層Aを有する。1は物理的変化、すな
わちホールを示し、吸収層に設ける。完全を期す
るため再度示すが、透明、反射および吸収の性質
は使用するレーザ光の波長に適合している。異な
る波長の照射に対して前記性質を有しないかまた
は殆んど有しない材料を使用することができる。
基板Sは、種々の材料、例えばガラス、合成樹脂
材等から製造できる。基板を透明にすることがで
きるが、第1図に示した例ではこれは強制的でな
い。 FIG. 1 shows a reference example information recording element in which information is already stored. S indicates a substrate. Anti-reflection coating includes reflective layer R and transparent layer T.
and an absorbent layer A. 1 indicates a physical change, that is, a hole, which is provided in the absorption layer. Again for completeness, the properties of transparency, reflection and absorption are matched to the wavelength of the laser light used. It is possible to use materials that do not have or have only a few of the above-mentioned properties when irradiated with different wavelengths.
The substrate S can be manufactured from various materials, such as glass, synthetic resin materials, etc. Although the substrate can be transparent, this is not mandatory in the example shown in FIG.
反射層Rは基板S上に設ける。Rはアルミニウ
ム、および銀等の金属から構成することができ
る。これらの金属は蒸着により基板に容易にデポ
ジツトできる。あるいは自己反射する基板Sを用
いることができ、反射層Rを基板Sと一致させる
ことができる。あるいは多層または単層の誘電反
射体を層Rに用いることかできる。 A reflective layer R is provided on a substrate S. R can be composed of metals such as aluminum and silver. These metals can be easily deposited onto a substrate by vapor deposition. Alternatively, a self-reflecting substrate S can be used, and the reflective layer R can be made coincident with the substrate S. Alternatively, a multilayer or single layer dielectric reflector can be used for layer R.
次に、透明層Tを層R上に設ける。層Tを有機
材料から作る。適当な有機材料には重合体物質、
例えばポリ塩化ビニル、エチレングリコールとテ
レフタル酸のポリエステル(マイラー)、ポリテ
トラフルオロエチレン(テフロン)、ポリ−p−
キシレン(パリレン)、セルロースその他がある。
重合体物質の多くは層R上に溶液の形で付着させ
た後、溶媒を蒸発させる必要がある。この層をデ
ボジツトする方法には、しばしば面倒なことがあ
る。容易に硬化できるラツカーをスピンニング、
浸漬または類似の方法で被着した後、紫外線照射
し固体重合体に硬化する。基板上に、テフロンを
スパツタリングによつて被着でき、パリレンを二
量体の熱解離および生成したラジカルの縮合およ
び重合によつて被着できる。あるいは、有機物質
として、使用するレーザ光を透過する染料を使用
できる。有機染料の使用は、簡単な蒸着法によつ
て大抵被着できるので有利である。蒸着の間染料
が分解する場合でも、本発明に適する有機被着物
を得ることができる。これは特にスーダンブラツ
クの蒸着で被着できる。適当な染料として例えば
セトシアニン、スーダンブラツクおよび特にフタ
ルシアニンがある。 Next, a transparent layer T is provided on the layer R. Layer T is made of organic material. Suitable organic materials include polymeric substances,
For example, polyvinyl chloride, polyester of ethylene glycol and terephthalic acid (Mylar), polytetrafluoroethylene (Teflon), poly-p-
There are xylene (parylene), cellulose, and others.
Many polymeric substances require deposition on layer R in solution form followed by evaporation of the solvent. The method of depositing this layer is often cumbersome. Spinning lacquer that can be easily hardened,
After being applied by dipping or similar methods, it is cured to a solid polymer by UV irradiation. On the substrate, Teflon can be deposited by sputtering and parylene can be deposited by thermal dissociation of the dimer and condensation and polymerization of the generated radicals. Alternatively, the organic material can be a dye that transmits the laser light used. The use of organic dyes is advantageous since they can mostly be applied by simple vapor deposition methods. Even if the dye decomposes during vapor deposition, organic deposits suitable for the present invention can be obtained. This can be applied in particular by vapor deposition of Sudan black. Suitable dyes include, for example, setocyanine, sudan black and especially phthalcyanine.
吸収層Aを層Tの上部に被着する。層Aはピス
マス−チタンまたはロジウム層のような金属薄層
から構成することができる。事実上適当なのは
CdまたはZnの薄層、例えば厚さ5nmのZn層であ
る。ZnとCdの金属は融点が低く、また、室温で
耐食性があるが、さらにバナジルフタルシアニン
層のような染料層を使用できる。 Absorbent layer A is applied on top of layer T. Layer A can consist of a thin metal layer, such as a pismuth-titanium or rhodium layer. What is actually appropriate
A thin layer of Cd or Zn, for example a 5 nm thick Zn layer. The metals Zn and Cd have low melting points and are corrosion resistant at room temperature, but additionally dye layers such as vanadyl phthalcyanine layers can be used.
層R,TおよびAは、反射防止条件を満足する
ように相互に関係づける必要がある。すなわち、
第1図に矢印で示した方向からレーザ光が吸収層
Aに入射する場合、光の一部は反射し、一部は吸
収され、他の一部は透過する。透過した部分は反
射層Rで反射し、次に一部は層Aで吸収され、一
部は層Aを通過して外側に出射する。最後の部分
−外側に出射した部分−と、層Aに入射し反射す
る部分が逆位相にある場合には、上記外側に出射
した部分は、上記層Aで反射する部分を部分的に
消滅する。この部分的消滅は、透明層Tの厚さを
層R,TおよびAに使用される材料の反射率によ
つて選ぶ場合に起り、Aで入射し、反射するビー
ムとRで反射し、外側に出射するビームとの間の
位相差はπの奇数倍に等しい。AおよびRで反射
する際の位相変化の補正を無視し、Aの一定の厚
さを無視する場合、中間層の厚さは1/4λ(2n+
1)に等しく、λは媒体中のレーザ光の波長に等
しく、nは零に等しいかそれより大きい整数であ
る。反射層による熱損失が優勢であることを考慮
して、層の厚さを好ましくは十分な厚さ(nの選
択により)に選ぶと、照射段階の間吸収層から反
射層まで熱は拡散しない。反射防止の条件はそれ
自体既知である。情報記録素子に関する参考書に
は、エー・イー・ベルとエフ・ダブリユ・スポン
グによる「光学記録のための反射防止構造」(A.
E・Bell and F.W.Spong、Anti reflection
Structures for Optical Recording、IEEE
Journal of Quantum Elecronics、巻QE14、第
7号、1978年7月、487〜495頁)がある。 Layers R, T and A must be interrelated to satisfy anti-reflection requirements. That is,
When laser light enters the absorption layer A from the direction indicated by the arrow in FIG. 1, part of the light is reflected, part is absorbed, and the other part is transmitted. The transmitted part is reflected by the reflective layer R, then part is absorbed by the layer A, and part passes through the layer A and is emitted to the outside. If the last part - the part emitted to the outside - and the part that enters and is reflected by layer A are in opposite phase, the part emitted to the outside partially annihilates the part reflected by layer A. . This partial annihilation occurs if the thickness of the transparent layer T is chosen depending on the reflectivity of the materials used for the layers R, T and A, with the beam incident at A and reflected at R and the outside The phase difference between the beam and the beam emitted at is equal to an odd multiple of π. If we ignore the correction for the phase change upon reflection at A and R and ignore the constant thickness of A, the thickness of the intermediate layer is 1/4λ(2n+
1), λ is equal to the wavelength of the laser light in the medium, and n is an integer greater than or equal to zero. Taking into account the predominance of heat loss through the reflective layer, the layer thickness is preferably chosen to be sufficiently thick (through the choice of n) that no heat is diffused from the absorbing layer to the reflective layer during the irradiation phase. . The conditions for antireflection are known per se. Reference books on information recording devices include ``Antireflection Structures for Optical Recording'' by A. E. Bell and F. D'Avrill Spong (A.
E・Bell and FWSpong, Anti reflection
Structures for Optical Recording, IEEE
Journal of Quantum Electronics, Volume QE14, No. 7, July 1978, pp. 487-495).
第2図は、本発明の情報記録素子の実施例を示
す図である。第2図の文字と数字は第1図と同じ
意味である。この実施例では、矢印で示す方向か
ら入射するレーザ光によつて基板を介して書込み
読出しが行われるように、基板は透明でなければ
ならない。情報の書込み読出す際、レーザ光は吸
収層Aに焦点を合わせ、この吸収層Aは、この実
施例では、情報記録素子の内部に封入され損傷か
ら保護されている。基板の自由表面領域が損傷し
た場合、この自由表面領域がレーザ光の焦点を合
わせる目標物の焦点範囲の深さの外側にあるので
何ら障害がない。第1図に示した例では層Aが損
傷を受けやすく損害となり易い。 FIG. 2 is a diagram showing an embodiment of the information recording element of the present invention. The letters and numbers in FIG. 2 have the same meanings as in FIG. In this embodiment, the substrate must be transparent so that it can be written to and read from by laser light incident from the direction indicated by the arrow. When writing and reading information, the laser beam is focused on the absorption layer A, which in this embodiment is sealed inside the information recording element and protected from damage. If the free surface area of the substrate is damaged, there is no harm since this free surface area is outside the depth of the focal range of the target on which the laser light is focused. In the example shown in FIG. 1, layer A is susceptible to damage and damage.
本発明の情報記録素子の使用についてさらに第
1図を参照して説明する。 The use of the information recording element of the present invention will be further explained with reference to FIG.
矢印で示したレーザ光は、情報記録素子に向つ
ている。ビームの強度は、層Aにホール1を焼き
抜くのに十分な程大きい値と焼き抜くには不十分
な大きさの値との間で、記録すべき情報に従つて
調節する。レーザビームを情報記録素子と関連し
ておよび/または反対に動かす。このようにし
て、ホール1のパターンあるいは物理的または科
学的変化が層Aに得られるが、これらの変化の1
種のみを図に示した。読出す際、より低い強度の
レーザ光を用いるので、層Aにこれ以上のホール
はつくられない。レーザ光はホール1に入射する
場合反射するが、レーザ光がホールのそばに達す
る場合には少しも反射しないかわずかに反射す
る。反射した光を検出しさらに処理する。、
上に述べた層のほかに、本発明の記録素子はさ
らに保護層等の他の層を含むことができる。 The laser beam indicated by the arrow is directed toward the information recording element. The intensity of the beam is adjusted between a value large enough to burn out hole 1 in layer A and a value not large enough to burn it out, depending on the information to be recorded. moving the laser beam relative to and/or against the information recording element; In this way, a pattern of holes 1 or physical or chemical changes is obtained in layer A, but one of these changes
Only the species are shown in the figure. During reading, a lower intensity laser beam is used, so no more holes are created in layer A. When the laser beam is incident on the hole 1, it is reflected, but when the laser beam reaches the vicinity of the hole, it is not reflected at all or is reflected slightly. The reflected light is detected and further processed. , In addition to the layers mentioned above, the recording element of the invention may further include other layers such as a protective layer.
実験例 1
アルミニウム反射層を厚さ1mmのガラス基板に
蒸着した(厚さ50nm)。厚さ140nmのポリ−p
−キシレンのポリマー層(室温にて熱伝導率
0.2W/mK)を熱解離によつてアルミニウム上
に設けた。Experimental Example 1 An aluminum reflective layer was deposited on a 1 mm thick glass substrate (50 nm thick). 140nm thick poly-p
-Polymer layer of xylene (thermal conductivity at room temperature
0.2 W/mK) was applied onto aluminum by thermal dissociation.
厚さ8nmのBiの吸収層をポリマー層上に蒸着
した。このようにして得た素子において、50nsの
間60mWのエネルギーを用いたダイオードレーザ
(波長820nm)によつて吸収層にホールを焼き抜
いた。厚さ140nmのSiO2の層を(ポリマー層の
代りに)用いる場合、20mWのエネルギーが必要
であつた。 An absorbing layer of Bi with a thickness of 8 nm was deposited on the polymer layer. In the device thus obtained, holes were burnt out in the absorption layer by a diode laser (wavelength 820 nm) using an energy of 60 mW for 50 ns. When using a layer of SiO 2 with a thickness of 140 nm (instead of a polymer layer), an energy of 20 mW was required.
実験例 2
バナジルフタルシアニン(厚さ20nm)層を吸
収層として基板上に真空被着した。その後、セル
ロース層(300nm)(室温にて納伝導率0.25W/
mK以下)をスピンニングによつて被着した。最
後にアルミニウム反射層をセルロース上に真空被
着した。基板を介して吸収層に、100nsで20mW
のエネルギーにてクリプトンレーザ(λ=672n
m)によつて物理的/化学的変化を起こさせたの
で、照射領域は反射防止条件をも早満足しなかつ
た。Experimental Example 2 A layer of vanadyl phthalcyanine (20 nm thick) was vacuum deposited on a substrate as an absorbing layer. After that, a cellulose layer (300nm) (conductivity 0.25W/at room temperature)
mK or less) was deposited by spinning. Finally, an aluminum reflective layer was vacuum deposited onto the cellulose. 20mW in 100ns through the substrate to the absorption layer
Krypton laser (λ=672n
Due to the physical/chemical changes caused by m), the irradiated area did not quickly satisfy the anti-reflection condition.
第1図は参考例の情報記録素子の断面図、第2
図は本発明の情報記録素子の実施例の断面図であ
る。
S……基板、R……反射層、T……透明層、A
……吸収層、1……ホール。
Figure 1 is a cross-sectional view of an information recording element as a reference example;
The figure is a sectional view of an embodiment of the information recording element of the present invention. S...substrate, R...reflective layer, T...transparent layer, A
...Absorption layer, 1 ... hole.
Claims (1)
備えた基板を有し、記録すべき情報に従つて調節
されたレーザ光によつて情報ビツトを書込むこと
ができ、該コーテイングが適切なレーザ光を反射
する反射層、適切なレーザ光を吸収する吸収層、
およびこれら二層間に設けられ適切なレーザ光を
通過する透明層を有し、レーザ光によつて情報を
書込み読出しを行うことができる情報記録素子に
おいて、吸収層が基板上に設けられ、この吸収層
上に透明層が設けられ、この透明層上に反射層が
設けられ、基板が透過性であり且つ、上記透明層
が室温にて0.7W/mK以下の熱伝導率を有し適
切なレーザ光を透過する有機化合物からなること
を特徴とする情報記録素子。1 a substrate with an anti-reflection coating on at least one side, on which information bits can be written by a laser beam adjusted according to the information to be recorded, the coating reflecting the appropriate laser beam; reflective layer, absorption layer that absorbs appropriate laser light,
In the information recording element, which has a transparent layer provided between these two layers and allows appropriate laser light to pass therethrough, and can write and read information using the laser light, an absorption layer is provided on the substrate, and the absorption layer is provided on the substrate. a transparent layer is provided on the layer, a reflective layer is provided on the transparent layer, the substrate is transparent, and the transparent layer has a thermal conductivity of 0.7 W/mK or less at room temperature and is suitable for laser radiation. An information recording element characterized by being made of an organic compound that transmits light.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7903915A NL7903915A (en) | 1979-05-18 | 1979-05-18 | INFORMATION REGISTRATION ELEMENT. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55157136A JPS55157136A (en) | 1980-12-06 |
JPH02776B2 true JPH02776B2 (en) | 1990-01-09 |
Family
ID=19833206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6347980A Granted JPS55157136A (en) | 1979-05-18 | 1980-05-15 | Information recording element |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0019329B1 (en) |
JP (1) | JPS55157136A (en) |
AT (1) | AT368655B (en) |
AU (1) | AU5846080A (en) |
DE (1) | DE3068782D1 (en) |
NL (1) | NL7903915A (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2488711B1 (en) * | 1980-08-13 | 1985-06-28 | Thomson Csf | THERMO-OPTICAL INFORMATION RECORDING PROCESS AND INFORMATION MEDIUM FOR CARRYING OUT SAID METHOD |
WO1983001702A1 (en) * | 1981-11-09 | 1983-05-11 | Burroughs Corp | Preparation of archival recording media for digital data storage |
WO1983001699A1 (en) * | 1981-11-09 | 1983-05-11 | Burroughs Corp | Archival data recording system using low power radiation and related media |
JPS58158054A (en) * | 1982-03-15 | 1983-09-20 | Toshiba Corp | Optical information recording medium |
JPS59500641A (en) * | 1982-04-15 | 1984-04-12 | バロ−ス・コ−ポレ−ション | Optical storage systems using new multilayer optical media |
US4451914A (en) * | 1982-04-15 | 1984-05-29 | Burroughs Corporation | Optical storage system employing a multi-layer optical medium |
JPS5911552A (en) * | 1982-07-09 | 1984-01-21 | Matsushita Electric Ind Co Ltd | Recording carrier |
JPS60500108A (en) * | 1982-12-17 | 1985-01-24 | バロ−ス・コ−ポレ−ション | Coated media for optical recording with “soft/hard” overcoat |
JPS6057553A (en) * | 1983-06-01 | 1985-04-03 | バロ−ス・コ−ポレ−シヨン | Optical memory disc and manufacture thereof |
JPS60107391A (en) * | 1983-11-17 | 1985-06-12 | Fujitsu Ltd | Preparation of code |
SE445656B (en) * | 1983-12-13 | 1986-07-07 | Sven Runo Vilhelm Gebelius | DEVICE FOR A TARGET ELEMENT THERE IS A FLEXIBLE TAPE, THE LENGTH OF WHICH SUBSTANTLY EXCEEDS THE LENGTH BETWEEN ITS POINTS IN THE TARGET ELEMENT AND FOUNDATION |
JPS6120237A (en) * | 1984-07-06 | 1986-01-29 | Canon Inc | Optical information recording medium |
US4599298A (en) * | 1984-07-16 | 1986-07-08 | Minnesota Mining And Manufacturing Company | Graphic arts imaging constructions using vapor-deposited layers |
JPS6161895A (en) * | 1984-09-04 | 1986-03-29 | Daicel Chem Ind Ltd | Laser recording film |
JP2635330B2 (en) * | 1986-07-23 | 1997-07-30 | 日立化成工業株式会社 | Optical recording medium |
US5633106A (en) * | 1994-04-08 | 1997-05-27 | Mitsui Toatsu Chemicals, Inc. | Optical recording media and a method of recording and reproducing information |
US5658707A (en) * | 1994-10-18 | 1997-08-19 | Mitsui Toatsu Chemicals, Inc. | Optical recording media |
US5925433A (en) * | 1995-12-01 | 1999-07-20 | Akzo Nobel N.V. | Optical recording medium based on Fabry-Perot principle |
EP0927419B1 (en) * | 1996-09-02 | 2002-06-05 | Akzo Nobel N.V. | Optical recording medium comprising a cross-linked buffer layer |
KR100230449B1 (en) * | 1996-10-10 | 1999-11-15 | 윤종용 | Optical recording medium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5346019A (en) * | 1976-10-08 | 1978-04-25 | Canon Inc | Recoading medium |
JPS53122403A (en) * | 1977-03-28 | 1978-10-25 | Rca Corp | Information recorder |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932319B2 (en) * | 1974-03-22 | 1984-08-08 | 富士写真フイルム株式会社 | recording material |
US3911444A (en) * | 1974-04-04 | 1975-10-07 | Bell Telephone Labor Inc | Metal film recording media for laser writing |
DE2826122A1 (en) * | 1977-06-14 | 1978-12-21 | Fuji Photo Film Co Ltd | RECORDING MATERIAL |
US4315269A (en) * | 1977-08-29 | 1982-02-09 | Rca Corporation | Thick protective overcoat layer for optical video disc |
GB2005155A (en) * | 1977-09-28 | 1979-04-19 | Rca Corp | Improved optical recording medium |
NL7809159A (en) * | 1977-09-29 | 1979-04-02 | Philips Nv | INFORMATION REGISTRATION ELEMENT WITH DYE CONTAINING AUXILIARY LAYER. |
US4189735A (en) * | 1978-02-24 | 1980-02-19 | Rca Corporation | Record playback apparatus and information record therefor |
-
1979
- 1979-05-18 NL NL7903915A patent/NL7903915A/en not_active Application Discontinuation
-
1980
- 1980-05-02 EP EP80200409A patent/EP0019329B1/en not_active Expired
- 1980-05-02 DE DE8080200409T patent/DE3068782D1/en not_active Expired
- 1980-05-15 JP JP6347980A patent/JPS55157136A/en active Granted
- 1980-05-16 AT AT0264080A patent/AT368655B/en not_active IP Right Cessation
- 1980-05-16 AU AU58460/80A patent/AU5846080A/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5346019A (en) * | 1976-10-08 | 1978-04-25 | Canon Inc | Recoading medium |
JPS53122403A (en) * | 1977-03-28 | 1978-10-25 | Rca Corp | Information recorder |
Also Published As
Publication number | Publication date |
---|---|
ATA264080A (en) | 1982-02-15 |
EP0019329A1 (en) | 1980-11-26 |
JPS55157136A (en) | 1980-12-06 |
NL7903915A (en) | 1980-11-20 |
EP0019329B1 (en) | 1984-08-01 |
AT368655B (en) | 1982-10-25 |
AU5846080A (en) | 1980-11-20 |
DE3068782D1 (en) | 1984-09-06 |
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