JPH0276857U - - Google Patents
Info
- Publication number
- JPH0276857U JPH0276857U JP15651888U JP15651888U JPH0276857U JP H0276857 U JPH0276857 U JP H0276857U JP 15651888 U JP15651888 U JP 15651888U JP 15651888 U JP15651888 U JP 15651888U JP H0276857 U JPH0276857 U JP H0276857U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- optical semiconductor
- semiconductor composite
- photodiode
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Optical Communication System (AREA)
Description
第1図は本考案の第1に係る光半導体複合素子
の実施例の説明図、第2図は同実施例の回路図、
第3図は本考案の第2に係る光半導体複合素子の
実施例の説明図、第4図は同実施例の回路図、第
5図は本考案の第2に係る光半導体複合素子の他
の実施例の説明図、第6図は同実施例の回路図で
ある。
10……光半導体(発光ダイオード)、12…
…トランジスタ、14,16,18,20,24
,42,44,48……リード、22……電流制
限抵抗器、40……ホトダイオード、46……負
荷抵抗器、50……電界効果トランジスタ。
FIG. 1 is an explanatory diagram of an embodiment of the optical semiconductor composite device according to the first aspect of the present invention, FIG. 2 is a circuit diagram of the same embodiment,
FIG. 3 is an explanatory diagram of an embodiment of the optical semiconductor composite device according to the second aspect of the present invention, FIG. 4 is a circuit diagram of the same embodiment, and FIG. 5 is an explanatory diagram of an embodiment of the optical semiconductor composite device according to the second aspect of the present invention. FIG. 6 is a circuit diagram of the embodiment. 10... Optical semiconductor (light emitting diode), 12...
...Transistor, 14, 16, 18, 20, 24
, 42, 44, 48...Lead, 22...Current limiting resistor, 40...Photodiode, 46...Load resistor, 50...Field effect transistor.
Claims (1)
この発光素子を駆動する回路素子とを、共通のリ
ードにより相互に接続して一体化したことを特徴
とする光半導体複合素子。 (2) 前記発光素子は発光ダイオードであり、前
記回路素子はトランジスタであることを特徴とす
る請求項1記載の光半導体複合素子。 (3) 前記トランジスタは、トランジスタを流れ
る電流を制限する電流制限抵抗器を有しているこ
とを特徴とする請求項2記載の光半導体複合素子
。 (4) 光信号を電気信号に変換する受光素子と、
この受光素子の負荷抵抗器とを共通のリードによ
り相互に接続して一体化したことを特徴とする光
半導体複合素子。 (5) 前記受光素子はホトダイオードであり、こ
のホトダイオードのアノードに前記負荷抵抗器と
、ホトダイオードの出力信号を増幅する増幅素子
が接続してあることを特徴とする請求項4記載の
光半導体複合素子。[Claims for Utility Model Registration] (1) A light emitting element that converts an electrical signal into an optical signal;
An optical semiconductor composite device characterized in that the light emitting device and a circuit device for driving the light emitting device are interconnected and integrated through a common lead. (2) The optical semiconductor composite device according to claim 1, wherein the light emitting element is a light emitting diode, and the circuit element is a transistor. (3) The optical semiconductor composite device according to claim 2, wherein the transistor has a current limiting resistor that limits the current flowing through the transistor. (4) a light receiving element that converts optical signals into electrical signals;
An optical semiconductor composite element characterized in that the light receiving element and the load resistor are interconnected and integrated by a common lead. (5) The optical semiconductor composite device according to claim 4, wherein the light receiving element is a photodiode, and the load resistor and an amplification element for amplifying the output signal of the photodiode are connected to the anode of the photodiode. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651888U JPH0276857U (en) | 1988-11-30 | 1988-11-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15651888U JPH0276857U (en) | 1988-11-30 | 1988-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0276857U true JPH0276857U (en) | 1990-06-13 |
Family
ID=31435129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15651888U Pending JPH0276857U (en) | 1988-11-30 | 1988-11-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0276857U (en) |
-
1988
- 1988-11-30 JP JP15651888U patent/JPH0276857U/ja active Pending
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