JPH0272647A - Method and apparatus for testing silicon substrate - Google Patents
Method and apparatus for testing silicon substrateInfo
- Publication number
- JPH0272647A JPH0272647A JP22402688A JP22402688A JPH0272647A JP H0272647 A JPH0272647 A JP H0272647A JP 22402688 A JP22402688 A JP 22402688A JP 22402688 A JP22402688 A JP 22402688A JP H0272647 A JPH0272647 A JP H0272647A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- silicon substrate
- humidity
- controller
- airtight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000012360 testing method Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、シリコン基板の試験方法及びその装置に関
し、より詳しくは、シリコン基板の保管環境の確認試験
に係る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for testing silicon substrates, and more particularly to a test to confirm the storage environment of silicon substrates.
（従来の技術）
従来、シリコン基板は、加工後の保管において、活性な
表面が不純物を吸着したり保管雪囲気との反応等を起す
ことがないように、保管容器を窒素、アルゴンなどの不
活性ガスにより置換し、保管環境条件を整えて保護する
方法が採られているが、長期の保管によりシリコン基板
の表面が汚れる等の経時変化を生じることがある。(Prior art) Conventionally, when storing silicon substrates after processing, a storage container is filled with nitrogen, argon, or other impurities to prevent the active surface from adsorbing impurities or reacting with the storage atmosphere. A method of protecting the silicon substrate by replacing it with an active gas and adjusting the storage environment conditions has been adopted, but long-term storage may cause changes over time such as the surface of the silicon substrate becoming dirty.
そして、上記経時変化の原因究明と対策は、変化が明瞭
に確認できた時に、保管環境分析を行うことによりなさ
れている。The causes of the above-mentioned changes over time are investigated and countermeasures are taken by analyzing the storage environment when the changes are clearly confirmed.
（発明が解決しようとする課題）
従って、経時変化が明らかとなるには、長期間を要して
いたので、その原因究明を開始し対策を施す時期も、必
然的に遅くなっていた。(Problem to be Solved by the Invention) Therefore, since it took a long time for the change over time to become clear, the time to start investigating the cause and take countermeasures was inevitably delayed.
本発明は、上記実情下にあって短期間に環境試験結果を
得る方法及びそれに使用する装置を提供する目的でなさ
れたものである。The present invention was made under the above-mentioned circumstances for the purpose of providing a method for obtaining environmental test results in a short period of time, and an apparatus for use in the method.
（課題を解決するための手段）
すなわち、第１の発明は、シリコン基板をセットした環
境を、温度、湿度、圧力、雰囲気ガスのうち１又は２以
上のものを用いて制御し、所定時間経過後にシリコン基
板への影響を判別することを、その要旨とし、第２の発
明は、温度コントローラと湿度コントローラとを備えた
気密外槽と、前記気密外槽内に配置されたガス置換可能
な気密内槽とから試験装置を構成することを、その要旨
としている。(Means for Solving the Problem) That is, the first invention controls the environment in which the silicon substrate is set using one or more of temperature, humidity, pressure, and atmospheric gas, and The gist of the invention is to later determine the influence on the silicon substrate, and the second invention provides an airtight outer tank equipped with a temperature controller and a humidity controller, and an airtight tank disposed in the airtight outer tank that allows gas replacement. The gist of this is that the test device is constructed from an inner tank and an inner tank.
（作 用）
試験者は、雰囲気構成ファクタのうち任意の１又は２以
上のファクタに着目し、シリコン保管環境試験において
、上記着目したファクタを用い、所定時間後、シリコン
を取り出して上記着目したファクタのシリコンへの影響
を調べる。このようにすれば、着目されたファクタを用
いている分だけのシリコン基板への影響が短時間で判明
する。(Function) The tester focuses on any one or more factors among the atmosphere composition factors, uses the focused factors in the silicon storage environment test, and after a predetermined time, takes out the silicon and tests the focused factors on the silicon storage environment test. Investigate the effect of on silicon. In this way, the influence on the silicon substrate due to the use of the noted factor can be determined in a short time.
また、上記本発明装置は、温度、湿度、雰囲気ガスを種
々変化させることができるため、単に特定のファクタ（
組合せを含む）の影響のみならず、影響の大小をも判別
することができる。Furthermore, since the device of the present invention can vary the temperature, humidity, and atmospheric gas, it is possible to change the temperature, humidity, and atmospheric gas in various ways.
It is possible to determine not only the influence of (including combinations), but also the magnitude of the influence.
（実施例）
第１図は、第１実施例の゛縦断正面図である。気密外槽
１は、シリコン基板、保管容器若しくは気密内槽を収納
するものであり、温度コントローラ２、冷却コントロー
ラ３により温度を、また、湿度コントローラ４と湿度送
気弁５により湿度を制御する構成となっている。温度計
６、湿度計７は気密外槽１内の温湿度モニタであり、温
湿度コントローラ２，３．４と連動し、槽内の温湿度を
制御するものである。(Embodiment) FIG. 1 is a vertical sectional front view of the first embodiment. The airtight outer tank 1 houses a silicon substrate, a storage container, or an airtight inner tank, and has a configuration in which the temperature is controlled by a temperature controller 2 and a cooling controller 3, and the humidity is controlled by a humidity controller 4 and a humidity air supply valve 5. It becomes. A thermometer 6 and a hygrometer 7 are temperature/humidity monitors inside the airtight outer tank 1, and work in conjunction with the temperature/humidity controllers 2, 3.4 to control the temperature/humidity inside the tank.
このように構成された試験装置内に、シリコン基板を、
カセットにセットしたまま収納し、あるいは、温度計８
、湿度計９を接続したシリコン基板保管容器なる気密内
槽１０に収納する。A silicon substrate is placed inside the test equipment configured in this way.
Store it in the cassette, or use the thermometer 8
, and stored in an airtight inner tank 10, which is a silicon substrate storage container, to which a hygrometer 9 is connected.
次に、気密外槽１の温湿度を設定し、保管環境における
評価試験を開始する。Next, the temperature and humidity of the airtight outer tank 1 are set, and an evaluation test in the storage environment is started.
例えば、特定ファクタとして、温度を採り上げる場合に
は、温度コントローラ２と冷却コントローラ３を駆動し
て雰囲気中の温度のみを可変にする。第２図は、温度変
化の影響を３０サイクルに亘って試験した結果を示すグ
ラフである。For example, when taking temperature as a specific factor, the temperature controller 2 and the cooling controller 3 are driven to make only the temperature in the atmosphere variable. FIG. 2 is a graph showing the results of testing the influence of temperature changes over 30 cycles.
すなわち、実際のシリコン基板の保管においては、何ケ
月もの期間経過の後にしか出て来ない汚れが、最長で２
時間×３０回＝６０時間で判明することになる。In other words, in actual storage of silicon substrates, dirt that only appears after many months has passed, but the
It will become clear in time x 30 times = 60 hours.
（実施例２）
第３図は、第２実施例の縦断正面図である。気密外槽２
１は温湿度制御を行う槽で、温度コントローラ２２、冷
却コントローラ２３により温度を、また、湿度コントロ
ーラ２４と湿度送気弁２５により湿度を、制御できる構
成となっている。(Example 2) FIG. 3 is a longitudinal sectional front view of the second example. Airtight outer tank 2
Reference numeral 1 denotes a tank for controlling temperature and humidity, and is configured such that the temperature can be controlled by a temperature controller 22 and a cooling controller 23, and the humidity can be controlled by a humidity controller 24 and a humidity air supply valve 25.
温度計２６、湿度計２７は、気密外槽２１内の温湿度モ
ニタであり、温度・湿度コントローラ２２．２３．２４
と連動している。２８は気密内槽であり、減圧ポンプ３
６と弁３０で接続されており、また、ガス置換装置３７
と弁３４により気密内槽２８の圧力と雰囲気ガスとを制
御できる。また、気密内槽２８には、圧力計２９、温度
計３１、湿度計３２、ガス濃度計３３が取り付けられて
おり、保管環境試験条件の設定及びモニタができる。こ
のように構成された試験装置内に、シリコン基板をカセ
ットにセットし、気密内槽２８に入れる。次に気密内槽
２８を減圧ポンプ３６により減圧にした後、ガス置換装
置３７により所定の濃度まで置換し、温度を設定した後
、保管環境試験を開始する。The thermometer 26 and the hygrometer 27 are temperature and humidity monitors inside the airtight outer tank 21, and the temperature and humidity controllers 22, 23, and 24
It is linked with 28 is an airtight inner tank, and the decompression pump 3
6 and a valve 30, and is also connected to a gas replacement device 37.
The pressure and atmospheric gas in the airtight inner tank 28 can be controlled by the valve 34 and the valve 34. Furthermore, a pressure gauge 29, a thermometer 31, a hygrometer 32, and a gas concentration meter 33 are attached to the airtight inner tank 28, so that storage environment test conditions can be set and monitored. A silicon substrate is set in a cassette and placed in the airtight inner tank 28 in the test apparatus configured as described above. Next, after reducing the pressure in the airtight inner tank 28 using the decompression pump 36, the gas is replaced with gas to a predetermined concentration using the gas replacement device 37, and after setting the temperature, a storage environment test is started.
例えば、アンモニアガスを特定ファクタとして採り上げ
る場合は、ガス置換装置３７で選定濃度のアンモニアガ
スを送り込む。第４図は、かくして得られた試験結果を
示すグラフであり、試験は、最長１６０時間でその結果
が判明する。For example, when ammonia gas is selected as a specific factor, ammonia gas of a selected concentration is sent by the gas replacement device 37. FIG. 4 is a graph showing the test results thus obtained, and the test results are known after a maximum of 160 hours.
（発明の効果）
以上説明したように、本発明に依れば、シリコン基板に
対する環境試験が極めて短時間で行えることになり、シ
リコン基板の保管環境に関する対策が早められる。(Effects of the Invention) As described above, according to the present invention, environmental tests on silicon substrates can be performed in an extremely short time, and measures regarding the storage environment of silicon substrates can be taken quickly.
第１図は本発明の一実施例を示す縦断正面図、第２図は
温度を特定ファクタとして取り上げた場合の試験結果を
示すグラフ、第３図は他の実施例を示す縦断正面図、第
４図はアンモニアガスを特定ファクタとして取り上げた
場合の試験結果を示すグラフである。
１゜
２１・・・気密外槽
２゜
２２・・・温度コントローラ
４゜
２４・・・湿度コントローラ
１０゜
２８・・・気密内槽Fig. 1 is a longitudinal sectional front view showing one embodiment of the present invention, Fig. 2 is a graph showing test results when temperature is taken as a specific factor, and Fig. 3 is a longitudinal sectional front view showing another embodiment. Figure 4 is a graph showing test results when ammonia gas is taken up as a specific factor. 1゜21...Airtight outer tank 2゜22...Temperature controller 4゜24...Humidity controller 10゜28...Airtight inner tank
Claims (2)
圧力、雰囲気ガスのうち１又は２以上のものを用いて制
御し、所定時間経過後にシリコン基板への影響を判別す
ることを特徴とするシリコン基板の試験方法。(1) The environment in which the silicon substrate is set is adjusted to
1. A method for testing a silicon substrate, which comprises controlling using one or more of pressure and atmospheric gas, and determining the influence on the silicon substrate after a predetermined period of time has elapsed.
気密外槽と、前記気密外槽内に配置されたガス置換可能
な気密内槽とから成るを特徴とするシコン基板の試験装
置。(2) A silicon substrate testing device comprising an airtight outer tank equipped with a temperature controller and a humidity controller, and an airtight inner tank disposed within the airtight outer tank and capable of replacing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22402688A JPH0272647A (en) | 1988-09-07 | 1988-09-07 | Method and apparatus for testing silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22402688A JPH0272647A (en) | 1988-09-07 | 1988-09-07 | Method and apparatus for testing silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0272647A true JPH0272647A (en) | 1990-03-12 |
Family
ID=16807424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22402688A Pending JPH0272647A (en) | 1988-09-07 | 1988-09-07 | Method and apparatus for testing silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0272647A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009092446A (en) * | 2007-10-05 | 2009-04-30 | Daiken Trade & Ind Co Ltd | Method and device for adjusting temperature/humidity in humidity conditioning performance measuring device |
| WO2012051746A1 (en) * | 2010-10-18 | 2012-04-26 | 东莞市升微机电设备科技有限公司 | Low pressure and high-low temperature test box capable of controlling humidity |
-
1988
- 1988-09-07 JP JP22402688A patent/JPH0272647A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009092446A (en) * | 2007-10-05 | 2009-04-30 | Daiken Trade & Ind Co Ltd | Method and device for adjusting temperature/humidity in humidity conditioning performance measuring device |
| WO2012051746A1 (en) * | 2010-10-18 | 2012-04-26 | 东莞市升微机电设备科技有限公司 | Low pressure and high-low temperature test box capable of controlling humidity |
| US9176506B2 (en) | 2010-10-18 | 2015-11-03 | Dongguan City Simplewell Technology Co., Ltd. | Low pressure and high-low temperature test box capable of controlling humidity |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20040040372A1 (en) | Method for determining the permeation of gases into or out of plastic packages and for determination of shelf-life with respect to gas permeation | |
| EP1362238B1 (en) | Method and apparatus for calibration of instruments that monitor the concentration of a sterilant in a delivery system | |
| CA2608439C (en) | System for producing primary standard gas mixtures | |
| JP5133242B2 (en) | Method for measuring porosity by ellipsometry and device for carrying out one such method | |
| KR100731146B1 (en) | A evaluating performance test equipments of hydrogen storage | |
| CA2588184C (en) | Detection of sterilisation vapour condensation point | |
| US9945826B2 (en) | Functional test for gas sensors | |
| JP6994216B2 (en) | Moisture vapor transmission rate and mass change measuring device and its measuring method | |
| US7845206B2 (en) | System, apparatus and method for dispensing chemical vapor | |
| US7278292B2 (en) | Method of assessing the product shelf life in a package | |
| JP2002212702A (en) | Carburizing method and carburizing equipment | |
| JP6254985B2 (en) | Laser processing system for monitoring impure gas in the laser beam path | |
| JPH0272647A (en) | Method and apparatus for testing silicon substrate | |
| US20080178734A1 (en) | Inert gas method of environmental control for moisture sensitive solids during storage and processing | |
| US5259233A (en) | Counterflow valve | |
| US6690462B2 (en) | Calibration scheme for continuous monitoring of mercury emissions from stationary sources by plasma emission spectrometry | |
| JPH01199133A (en) | Gas generation apparatus and method | |
| JP3138009B2 (en) | Method and apparatus for evaluating impurity adsorption amount | |
| US5520881A (en) | Anoxic treatment method and apparatus | |
| US20230060192A1 (en) | Methods and apparatus for processing an electrostatic chuck | |
| Lan et al. | Moisture adsorption rates by different forms of rice | |
| JP6536111B2 (en) | Electronic component conveying apparatus and electronic component inspection apparatus | |
| JP2002206985A (en) | Airtightness inspecting device and method | |
| US3505854A (en) | Method for determining organic loading on charcoal | |
| JPH0499018A (en) | Semiconductor processing equipment |