JPH0271510A - Apparatus for semiconductor vapor growth - Google Patents

Apparatus for semiconductor vapor growth

Info

Publication number
JPH0271510A
JPH0271510A JP22224288A JP22224288A JPH0271510A JP H0271510 A JPH0271510 A JP H0271510A JP 22224288 A JP22224288 A JP 22224288A JP 22224288 A JP22224288 A JP 22224288A JP H0271510 A JPH0271510 A JP H0271510A
Authority
JP
Japan
Prior art keywords
gas
bell jar
supplied
reaction
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22224288A
Inventor
Hajime Hidaka
Hisanori Oki
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP22224288A priority Critical patent/JPH0271510A/en
Publication of JPH0271510A publication Critical patent/JPH0271510A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enhance gas substitution efficiency by installing the following: a discharge port, of a gas for reaction use, to be installed in the center of a reaction chamber; a discharge port of a gas for purge use at the upper part of the reaction chamber.
CONSTITUTION: A bell jar 1 is opened; a wafer 4 is placed on a diskshaped susceptor 3; the bell jar 1 is closed; N2 gas is supplied from a nozzle 5 and a hole 8 of an inner bell jar 7. Then, H2 gas is supplied to the inside of a reaction chamber from the nozzle 5 and the hole 8 of the inner bell jar 7; the N2 gas is evacuated. A flow rate of the H2 gas supplied from the hole 8 of the inner bell jar 7 is reduced; this gas is balanced with an atmosphere inside the reaction chamber; it is prevented that a reaction gas does not enter a part between the inner bell jar 7 and the bell jar 1; the H2 gas is supplied only from the nozzle 5; a high-frequency induction heating operation is started; a temperature of the disk-shaped susceptor 3 is raised to a prescribed temperature. Then, the reaction gas is mixed with the H2 gas; this mixed gas is supplied to the inside of the reaction chamber from the nozzle 5 in order to cause a vapor reaction. Then, the reaction gas is stopped; only the H2 gas is supplied to the inside of the reaction chamber from the nozzle 5; the high-frequency induction heating operation is stopped; a cooling operation is executed. The N2 gas is supplied to the inside of the reaction chamber from the nozzle 5 and the hole 8 of the inner bell jar 7; the H2 gas is evacuated; after that, the bell jar 1 is opened; the wafer 4 is taken out. Thereby, it is possible to shorten the gas substitution time.
COPYRIGHT: (C)1990,JPO&Japio
JP22224288A 1988-09-07 1988-09-07 Apparatus for semiconductor vapor growth Pending JPH0271510A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22224288A JPH0271510A (en) 1988-09-07 1988-09-07 Apparatus for semiconductor vapor growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22224288A JPH0271510A (en) 1988-09-07 1988-09-07 Apparatus for semiconductor vapor growth

Publications (1)

Publication Number Publication Date
JPH0271510A true JPH0271510A (en) 1990-03-12

Family

ID=16779327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22224288A Pending JPH0271510A (en) 1988-09-07 1988-09-07 Apparatus for semiconductor vapor growth

Country Status (1)

Country Link
JP (1) JPH0271510A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222960A (en) * 2010-02-26 2011-11-04 Hitachi Kokusai Electric Inc Substrate processor and method of manufacturing semiconductor device
US8956375B2 (en) 2002-08-26 2015-02-17 Flowcardia, Inc. Ultrasound catheter devices and methods
US8961423B2 (en) 2003-02-26 2015-02-24 Flowcardia, Inc. Ultrasound catheter apparatus
US9265520B2 (en) 2002-08-02 2016-02-23 Flowcardia, Inc. Therapeutic ultrasound system
US9282984B2 (en) 2006-04-05 2016-03-15 Flowcardia, Inc. Therapeutic ultrasound system
US9381027B2 (en) 2002-08-26 2016-07-05 Flowcardia, Inc. Steerable ultrasound catheter
US9402646B2 (en) 2009-06-12 2016-08-02 Flowcardia, Inc. Device and method for vascular re-entry
US9433433B2 (en) 2003-09-19 2016-09-06 Flowcardia, Inc. Connector for securing ultrasound catheter to transducer
US9629643B2 (en) 2006-11-07 2017-04-25 Flowcardia, Inc. Ultrasound catheter having improved distal end
US10004520B2 (en) 2004-08-26 2018-06-26 Flowcardia, Inc. Ultrasound catheter devices and methods
US10285719B2 (en) 2005-01-20 2019-05-14 Flowcardia, Inc. Vibrational catheter devices and methods for making same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9265520B2 (en) 2002-08-02 2016-02-23 Flowcardia, Inc. Therapeutic ultrasound system
US8956375B2 (en) 2002-08-26 2015-02-17 Flowcardia, Inc. Ultrasound catheter devices and methods
US9381027B2 (en) 2002-08-26 2016-07-05 Flowcardia, Inc. Steerable ultrasound catheter
US9421024B2 (en) 2002-08-26 2016-08-23 Flowcardia, Inc. Steerable ultrasound catheter
US8961423B2 (en) 2003-02-26 2015-02-24 Flowcardia, Inc. Ultrasound catheter apparatus
US9433433B2 (en) 2003-09-19 2016-09-06 Flowcardia, Inc. Connector for securing ultrasound catheter to transducer
US10004520B2 (en) 2004-08-26 2018-06-26 Flowcardia, Inc. Ultrasound catheter devices and methods
US10285719B2 (en) 2005-01-20 2019-05-14 Flowcardia, Inc. Vibrational catheter devices and methods for making same
US9282984B2 (en) 2006-04-05 2016-03-15 Flowcardia, Inc. Therapeutic ultrasound system
US9629643B2 (en) 2006-11-07 2017-04-25 Flowcardia, Inc. Ultrasound catheter having improved distal end
US9402646B2 (en) 2009-06-12 2016-08-02 Flowcardia, Inc. Device and method for vascular re-entry
JP2011222960A (en) * 2010-02-26 2011-11-04 Hitachi Kokusai Electric Inc Substrate processor and method of manufacturing semiconductor device

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