JPH0271439A - Recording and reproducing device - Google Patents

Abstract

PURPOSE:To realize recording and reproducing with high density and high reliability by using a single crystal for a probe electrode. CONSTITUTION:For example, on a silicon oxide SiO2 film 28 formed on a silicon substrate 27, pieces 21 and 22 of a different type of material and a monocrystal probe 23 out of tungsten W formed based on the piece 21 of the different type of material are provided and further, in the vicinity of the monocrystal probe 23, a MOS transistor 39 to amplify a probe current is provided. The MOS transistor 39 has a polycrystal gate electrode 24 made of the tungsten formed based on the piece 22 of the different type of material, a source electrode 26 and a drain electrode 25 made of aluminum Al and a thin-film resistance 33 made of such material as ruthenium. Thus, the fine monocrystal probe 23 whose tip diameter is 0.1mum order or below can be obtained and the high-density recording and reproducing of molecular or atomic level is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a large capacity, high density recording/reproducing device.

[Prior Art] In recent years, the data recording capacity of recording and reproducing devices has tended to increase year by year, and the recording unit size has become smaller and the recording density has become higher. For example, digital data using optical recording
For audio discs, the recording unit size is I
It has reached ILra2 level. Behind this is the active development of memory materials, and the emergence of inexpensive, high-density recording media that use organic thin films such as organic dyes and photopolymers.

On the other hand, recently, a scanning tunneling microscope (hereinafter abbreviated as STM) that can directly observe the electronic structure of surface atoms of a conductor has been developed [G, B1nn1g et a! ,, He1ve
ticaPhysica Acta, 55.728
(+982)], it has become possible to measure real space images with high resolution regardless of whether they are single crystal or amorphous, and has the advantage of being able to observe with low power without damaging the medium due to current. It is expected to have a wide range of applications because it can operate in the atmosphere and can be used with various materials.

STM utilizes the fact that a tunnel current flows when a voltage is applied between a metal probe (probe electrode) and a conductive substance and the probe is brought close to a distance of about 1 nm.

This current is very sensitive to changes in the distance between the two.

Surface information in real space can be obtained by scanning the probe while keeping the current or the average distance between the two constant. At this time, the resolution in the in-plane direction is approximately IA.

By applying this STM principle, it is possible to sufficiently perform high-density recording and reproduction on the atomic order (several A). The recording and reproducing method at this time is to change the surface condition of the appropriate recording layer using high-energy electromagnetic waves such as particle beams (electron beams, ion beams) or X-rays, and energy rays such as visible and ultraviolet rays. Recording and IF reproduction can be performed using STM methods and recording layers using materials that have a memory effect on the switching characteristics of voltage 'Iv currents, such as thin film layers of π-electron organic compounds and chalcogenides. STM
A method using , etc. has been proposed.

In order to perform recording and reproducing at this molecular level, the recording density will be higher as the radius of curvature of the tip of the probe facing the recording layer becomes smaller, so ideally the tip should be sharpened to about one atom. is desired.

Conventionally, a probe with a tip with a small radius of curvature,
Manufactured using mechanical polishing and electrolytic polishing methods.
In the mechanical polishing method, a fibrous crystal wire (p
By cutting and grinding (such as t), the radius of curvature is 5 to 10 g+
It is possible to manufacture a probe with a minute tip of s. Also,
In the electrolytic polishing method, a wire rod (such as W) with a diameter of 1 cm or less, which serves as a probe, is made perpendicular to the axial direction and immersed in an electrolytic solution for about 1 to 2 mm.
By applying a voltage between the wire and the opposing s11 pole in the electrolytic solution and electrolytically polishing the wire, it is possible to manufacture a probe having a minute tip with a radius of curvature of about 0.1 to 1 μm.

In reality, the tip of the probe closest to the recording layer at the atomic level is involved in recording and reproducing.

[From [rJ! However, in the conventional example described above, mechanical polishing or electrolytic polishing is used to manufacture the probe electrode (probing side), so it is difficult to create a probe electrode with a tip radius of curvature at the atomic or molecular level with good reproducibility. It is difficult to produce.

In addition, since the probe electrode manufactured by the above method is fixed to the device by screws or spring force,
Focusing on the tip of the probe electrode, there is also the drawback that the rigidity is weak, that is, the natural frequency is low. This also applies to the tips of probe electrodes manufactured by electrolytic polishing.

Therefore, all of the above-mentioned recording methods are methods that enable high-density recording by taking advantage of the characteristics of STM, but this high-density development requires the question of how small the radius of curvature of the tip of the probe electrode can be. It depends on how you make it.

[Means and effects for solving the problems] The present invention makes it possible to perform recording and reproducing with high density and high reliability by using a single crystal for the probe electrode.

That is, the present invention? The present invention is a recording and reproducing apparatus that includes a probe electrode made of an i-crystal, a recording medium provided opposite to the probe electrode, and means for applying a voltage between the probe electrode and the recording medium.

Each component of the present invention will be explained in detail below.

Probe electrode> The probe electrode used in the present invention is a single-crystal body provided on a whole surface of a substrate or a part of a thin film formed on one principal surface of the substrate. , as shown in FIG. 1, 8 films (insulating films) formed on the substrate 11 +
This is a single crystal body 14 grown on top of 2.

This method of manufacturing the single crystal 14 utilizes the difference in nucleation speed, and for example, a desired portion of a thin film formed on one principal surface of the substrate or on the entire surface of the substrate. , a step of providing a heterogeneous material whose nucleation rate is sufficiently higher than that of the substrate or thin film and which is sufficiently fine and fine to the extent that only a single nucleus grows; and a step of growing a single nucleus in the material to form a single crystal. A method having a process of forming a microscopic opening on a substrate, or laminating an insulating layer on a substrate with a minute opening that partially exposes the substrate, and forming a single crystal from the opening using the insulating film as a mask. For example, a method (selective epitaxial growth method) having a process of

Is it possible to grow a single crystal with a radius of curvature on the molecular or atomic level with good reproducibility if the manufacturing process conditions are accurately controlled? ') can.

Recording Medium> As the recording medium used in the present invention, a material having a memory switching phenomenon ('1 electrical memory effect) in current/voltage characteristics can be used.

For example, (1) Se, Te, A combined with oxide glass, borate glass, or elements of groups m, rv, v, and ■ of the periodic table.
Examples include amorphous semiconductors such as chalcogenide glasses containing s. They have an optical band gap Eg of 0.6 to 1.4 eV or an electrical activation energy Δ
It is an intrinsic semiconductor with an E of about 0.7 to 1.8 eV. As a specific example of chalcogenide glass, As-5s-Te
system, Ge-As-9e system, 5i-Ge-As-Te system,
For example, Si+6GezAssTe65 (subscript is atomic%)
, or Ge-Te-X system, 5i-Te-X system (X=
(V, VR group elements of Shaoze) For example, QH5Tea+5b2S
2 can be mentioned.

Furthermore, Ge-9b-Ss chalcogenide glass can also be used.

By applying a voltage in a direction perpendicular to the film surface using a probe electrode to an amorphous semiconductor layer in which the above compound is deposited on an electrode, an electric memory effect of the medium can be exhibited.

As a method for depositing such materials, conventionally known thin film forming techniques are sufficient to achieve the objects of the present invention. For example, suitable film forming methods include vacuum evaporation, cluster ion beam method, and the like. Generally, the electrical memory effect of such materials has been observed at film thicknesses of several gin or less, and although thinner layers are preferable in terms of recording resolution as a recording medium, from the viewpoint of uniformity and recording performance, )
: 1 gm or less, preferably 1 gm thick, more preferably 10 gm or less
It is preferable to have a film thickness of 0OA or less.

(2) Furthermore, tetraquinodimethane (TCNQ), TCN
Q derivatives, such as tetrabrotrotetracyanoquinodimethane (TCNQF4), tetracyanoethylene (TCNQF4),
NE) and tetracyanonaphthoquinodimethane (TNA
An organic semiconductor layer in which a salt of an electron-accepting compound such as P) and a metal having a relatively low reduction potential such as copper or silver is deposited on an electrode can also be mentioned.

As a method for forming such an organic semiconductor layer, a method is used in which the electron-accepting compound is vacuum-deposited on a copper or silver electrode.

Such an electric memory effect of an organic semiconductor has been observed with a film thickness of several tens of meters or less, but from the viewpoint of film formability and uniformity, a film thickness of 100A to IIL11 is preferable.

(3) Furthermore, recording media made of amorphous silicon may be mentioned. For example, metal/A-3i
(p layer/n layer/i layer) or metal/A-';+(I
The recording medium has a layer structure of (I' layer/p layer/i layer), and each layer of A-Si can be deposited by a conventionally known method. In the case of non-invention, the glow discharge method (GO) is preferably used.
, p' layer is preferably about 100 OA, and the total thickness is 0.
A layer of about 5 gm = 1 h is good.

(4) Furthermore, there may be mentioned a recording medium in which molecules having both a group having a π electron level and a group having only a σ electron level are slightly layered on an electrode.

Colors having a π-electron system suitable for the present invention; k (711 structures include, for example, phthalocyanine, dyes having a purphyrin skeleton such as tetraphenylporphine, azulene dyes having squarylium groups and croconic methine groups as bonding chains, and quinoline , cyanine-based similar dyes in which two nitrogen-containing heterocycles such as benzothiazole and benzoxazole are bonded through a squarylium group and a croconic methine group, or cyanine dyes, fused polycyclic aromatics such as anthracene and pyrene, and aromatic rings. and a chain compound in which a ring compound is polymerized with a multi-ring compound, and a polymer of diacetylene group, furthermore, a derivative of tetraquinodimethane or tetrathiafulvalene, its analogue, and its charge transfer complex, or furthermore ferrocene, tris, etc. pyridine ruthenium. Examples include gold gi complex compounds such as complexes.

Regarding the formation of organic recording media, it is possible to specifically apply the vaporization method, cluster ion beam method, etc., but the LB method is the most suitable among known conventional techniques due to v controllability, ease, and reproducibility. suitable.

According to this LB method, a monomolecular film of an organic compound having a hydrophobic site and a hydrophilic site in one molecule or a cumulative film thereof can be easily formed on a substrate, and has a thickness on the order of molecules, Moreover, it is possible to stably supply a uniform and homogeneous ultra-thin organic film over a large area.

In the LB method, when a molecule has a structure that has a lignophilic site and a hydrophobic site within the molecule, the molecule becomes hydrophilic on the water surface when the balance between the two (balance between both IA media properties) is maintained appropriately. This is a method of creating a monomolecular film or a cumulative film thereof by utilizing the fact that the monomolecular layer is formed with the group facing downward.

Examples of the group constituting the hydrophobic moiety include various hydrophobic groups such as saturated and unsustainable hydrocarbon groups, condensed polycyclic aromatic groups, and chain polycyclic phenyl groups, which are generally widely known. Each of these or a combination thereof constitutes a hydrophobic portion. On the other hand, the most typical constituent elements of the wood-philic moiety are, for example, carboxyl groups, ester groups, acid amide groups, imide groups, hydroxyl groups, and amine groups (1, 2, tertiary, and quaternary). Examples include hydrophilic groups such as. Each of these or a combination of these forms the parent part of the above molecule.

If a dye molecule has a well-balanced combination of these hydrophobic and hydrophilic groups and a π-electron system with an appropriate size, it is possible to form a monomolecular film on the water surface. ,
This is an extremely suitable material for the present invention.

Specific examples include the following molecules.

[I] A long-chain alkyl group introduced to make the croconic methine dye, and its carbon number n is preferably 5<n<30.

The compounds mentioned above as specific examples are only basic structures,
Needless to say, various substituted forms of these compounds are also suitable in the present invention.

[11] Squarylium dye A compound in which the croconic methine group of the compound listed in [I] is replaced with a squarylium group having the following structure.

(Left below) Here, R1 corresponds to the group with the above-mentioned σ electron level, and moreover, it is easy to form a monomolecular film on the water surface [II[] Polyphylline dye compound R = 0CH(COOH)CnH2n- + 5 <
n < 25M=H2, Cu, Ni, Zn, A
l2-CP, 5iCR2 and rare earth metal ion CH3 -CH2NHG3)+7 M=H2, Cu, old, AR-C12゜Rare earth metal ion 5i (J'? and Br- R= CnH2n, +5 < n < 25M=
82. CLI, old, Zn, AP-C1,5iCf!
? and rare earth metal ion R are introduced to facilitate the formation of a monomolecular film, and are not limited to the substituents listed here. Also, R1
-Ra and R correspond to the group having the above-mentioned σ electron level.

[rV] Fused polycyclic aromatic compound 0OH CH3+CHzhC=C-C=C-f:CH2LXO<
n, m<20, but n+m>10 or the parent tree, although 1000H is generally used, -O
H, -GONH2, etc. can also be used.

[VT]Other Quinquetier+yl (Hereinafter in the margin) It goes without saying that pigment materials other than those mentioned above that are suitable for the LH method are also suitable for the present invention. orotopsin and cytochrome C) and synthetic polypeptides (P
BLG etc.) can also be applied to H1f functions.

The electrical memory effect of these compounds having a π electron level has been observed with a film thickness of several tens of gm or less, but from the viewpoint of film formability and uniformity, a film thickness of 15 to 2000 A is preferable. .

The substrate supporting the material having the electric memory effect described in items (1) to (4) above must have the characteristics of an electrode, but the Any conductor having electrical conductivity can be used. That is, Au, Pt, Pd.

Metal plates such as Ag, Al, In, Sn, Pb, and W, alloys thereof, or glass on which these metals and alloys are vapor-deposited.

There are many materials including ceramics, plastic materials, Si (delivered, amorphous), graphite, and conductive oxides such as ITO. FIG. 2 is a block diagram showing a recording apparatus in which the invention has two probe electrodes, one for position detection and one for recording/reproduction. In FIG. 2, 102 and 103 are probe electrodes used for recording/reproducing and position detection, respectively, and the distance between these two probe electrodes is controlled by a probe electrode spacing fine adjustment mechanism 112 using a piezoelectric element. Although finely adjustable, they are usually kept at a constant interval. 10
fl is a probe current amplifier, and 108 is a fine movement mechanism 107.1 using a piezoelectric element to keep the probe current constant.
This is a servo circuit that controls 08. Reference numeral 113 indicates a recording/reproducing electrode between the recording/reproducing probe electrode 102 and the substrate electrode 104.
This is a power supply for applying a pulse voltage for erasing.

Since the probe current changes rapidly when the pulse voltage is applied, the servo circuit 109 controls the HOLD circuit to be turned on so that the output voltage remains constant during that time.

]101f A pair of probe upper poles in the XY direction 102.10
This is an XY scanning drive circuit for moving the 3.

+14 and 115 are connected to the probe electrode 102 in advance so that a probe current of about 10-9 A can be obtained.
．． It is used to coarsely control the distance between the probe electrode 103 and the recording medium 1, or to increase the relative displacement between the probe electrode and the plate in the XY directions (outside the range of the fine movement control mechanism).

Each of these mechanisms is controlled by a microcomputer 118.
Centrally controlled by Further, 117 represents a display device.

In addition, the mechanical performance in movement control using the pressure 7 element is shown below.

Z-direction fine movement control range: 0.1 mm to 1 μI 2-direction coarse movement control range: 10 nra to IC1 mm XY direction scanning range: 0. Inm ” l g11XY direction coarse control gl range: IOnm ~10mts total l1llll
, Control tolerance: <0.1n shoulder (during fine movement control) Total X
I4, V control tolerance: <In layer (during coarse movement control)
Position detection system> As the radius of curvature of the tip of the probe electrode becomes smaller and high-density recording becomes possible, this increase in density will occur in the recording plane direction (X-Y
(direction) and position control accuracy of the probe electrode. Here, recording and reproduction are performed at a position on the recording medium corresponding to the reference position coordinates.

Similar to the recording and reproducing of information, the position detection method of the present invention applies a voltage between a conductive probe (probe electrode) and a conductive substance, and when the distance between the two approaches 2 nm, a tunnel current is generated. It takes advantage of the flow. Since the tunneling current depends on the work function at the conductor surface, information about various surface electronic states 73 can be read. Applying this, to a recording medium having a regular atomic arrangement or an arbitrarily formed reference origin, a position and a coordinate system are introduced based on the regular atomic arrangement or the reference origin, Position detection is performed by detecting a characteristic change in tunnel current corresponding to the position coordinate system, and a record on a recording medium indicating the relative positional relationship with the position coordinate system based on the position detection result. In addition to specifying the playback position, the position of the -blade electrode on the recording/playback position is controlled.

FIG. 3 is a schematic diagram showing the positional relationship between the coordinate axes and the recording position at this time. That is, the positional information (A-I) as a scale on the coordinate axis is always in a relative positional relationship (A-A', etc.) with the recording position (A' to I'), and therefore the positional information A-I
By detecting , the recording positions of A' to A' can always be specified. At this time, each point (scale) of the coordinate axis and the recording position do not necessarily have to have a unique relative arrangement (for example, if the recording position corresponding to position information A is A',
', A~..., etc.).

It is preferable for accuracy to be unambiguous (corresponding to l:1), and the coordinate axes do not need to be one, but multiple coordinates may be used as necessary. , f
i! In this case, recording positions are also arranged two-dimensionally corresponding to each grid point of the two-dimensional coordinate system.

Coordinate axes> The coordinate axes of the position detection system used in the present invention are formed using a regular atomic arrangement and/or arbitrarily formed base points. As such a regular atomic arrangement, conductive materials with predetermined interstitial distances, such as various metals and graphite single crystals, can be used, and the tunnel current used in the present invention has a magnitude of about nAA. Therefore, the conductive material '1 need only have a conductivity of 1Q-IQ (Ω・C) or more, and therefore, a single crystal of a so-called semiconductor such as silicon can also be used. Let us consider a metal sample as a typical example.Now, we know that when a voltage V lower than the work function φ is applied between the probe electrode and the metal sample, which are separated by a distance z, electrons tunnel through the potential barrier. When the tunnel current density JT is determined by free electron approximation, it can be expressed as Jr=(βV/2πinput Z)exa(2Z/input)kawa(+).

However, input = h/Fr1T: Attenuation distance of the wave function in vacuum or air outside the metal h = r/2π: r blank constant m:'
Mass of electron β=e2/h: e: Electron charge In equation (1), if 2=2c is a constant value, the tunnel current density +r changes depending on the work function φ of the reference atomic arrangement. Therefore, on the 4th surface of the metal test tube related to the probe electrode,
2=2. If the tunnel current is scanned in an arbitrary linear direction while maintaining the current, the tunnel current changes periodically according to the metal atomic arrangement. Here, when using a metal sample whose lattice constant is known in advance, the atomic arrangement state in any direction based on the lattice points on any crystal plane is obvious, and the probe electrode can be scanned in that direction. The changes in the periodic tunneling current obtained when Therefore, if the scanning direction of the probe electrode is corrected so that the predicted value of the tunnel current change and the measured value of the tunnel current change obtained by actually scanning the probe electrode are equal, the movement of the probe electrode is
It follows the atomic arrangement of the sample. That is, if the atomic arrangement is regarded as a coordinate axis, the probe electrode will move on this coordinate axis. Now, if the probe electrode on this coordinate axis can move to a position a certain distance away in a certain direction, and the movement destination is an area where recording and playback can be performed, then 1=1 corresponds to each point on the coordinate axis. Recording and playback are possible at the specified location. In this case, it is not necessarily necessary for the probe electrode to move between the coordinate axes and the recording area; for example, a recording/reproducing probe electrode may be prepared at a fixed position with respect to a probe electrode (probe electrode for position detection) that moves on the coordinate axis. , a method such as linking the two may be used.

In any case, the position of the probe electrode in the recording area, that is, the recording position, can be uniquely determined with respect to the coordinate axis using the crystal lattice of the metal sample.

From the above, if a part or all of the surface of the recording medium has a regular atomic arrangement and the arrangement state is known, then It is possible to set a recording area having an X-Y coordinate system that indicates relative relationships.

As the coordinate axes for position detection, it is also possible to artificially create a plurality of reference points by making irregularities on the sample surface or implanting other atoms into ions, and use these points as the position coordinates. However, the accuracy as a coordinate axis is inferior to that using the atomic arrangement.

As described above, we have shown that it is possible to set positional coordinates on a recording medium and record/playback at each point corresponding to the positional coordinates. A point needs to be made clear. That is, it is necessary to provide an origin serving as a reference on the coordinate axes. The reference origin can be introduced by creating irregularities on the coordinate axes using a method such as etching, or by tampering with the surface condition of the recording medium by performing ion implantation, etc., but as already mentioned, it is possible to introduce the reference origin by using the atomic arrangement. It lacks precision to be used as the origin of the coordinate axes. When selecting point A on the coordinate axis as the reference origin in Figure 3, what is the difference between identifying point A and identifying point A' on the recording area that has a unique relative positional relationship with point A? It's the same thing. That is, if point A' can be identified, the coordinate axes and the positions of each point on the coordinate axes are uniquely determined. The method for setting the reference origin at point A' is to enter the information as the origin at point A' using the same method as the recording writing method because it is accurate and easy to create. Excellent even if Note that the reference origin need not be limited to one point, and a plurality of reference origins may be formed as necessary, such as when expanding the recording area.

The recording medium of the present invention is formed by a combination of the above-mentioned electric memory material and its supporting substrate (electrode);
When using the atomic arrangement as a coordinate axis, the atomic arrangement of the electric memory material itself is often inferior in its regularity, so it is not preferable to use it as a coordinate axis. It is desirable to use a material having an arrangement, leave a part of the material on which the electrical memory material is not deposited, and use the substrate atomic arrangement at such a location as a coordinate axis.

Hereinafter, the present invention will be explained in detail with reference to Examples.

[Example] Example 1 An example using the recording/reproducing apparatus shown in FIG. 2 will be described below.

Probe electrodes 102 and 103 were manufactured by the following method. FIG. 4 is a plan view of the completed single crystal probe (probe electrode), and FIGS. 5(a) to (e) are a-a in FIG. 6(a) to (e) are cross-sectional views of the main manufacturing steps along the line b-- of FIG.
FIG. 3 is a cross-sectional view of the main manufacturing process along line b.

As shown in FIGS. 4 and 5, the single crystal probe of this embodiment has dissimilar material pieces 21 and 22 on a silicon oxide (SiO2) film 28 formed on a silicon substrate 27.
A single crystal probe 23 made of tungsten (W) formed based on this dissimilar material piece 21 is provided, and a probe 23 for amplifying the probe current is provided near the single crystal probe 23. MOS) transistor 39
is provided. This MOS transistor 39 includes a polycrystalline gate electrode 24 made of tungsten formed based on a piece of different material 22, a source electrode 26 and a drain electrode 25 made of aluminum (AI), and a thin film made of a material such as ruthenium. 0 having a resistance of 33 and
The different material piece 21 used in this example has a size of IIL11 square, and was manufactured by the manufacturing method described later.
An extremely fine single crystal probe 23 with a tip diameter on the order of 0.11 L+m or less was obtained. Further, in the conventional example, the probe current detected by the probe was on the order of 10-9 A, but by amplifying it with a MOS transistor, a probe current on the order of 10-'A was obtained. In addition, since the probe current detected by the single crystal probe 23 is amplified immediately without being led out to the outside of the substrate, the S/N ratio is significantly improved compared to the conventional example in which the probe current is led out to the outside of the board and then amplified. I was able to improve it. In addition, ST using the microprobe of this example
As a result of observing the open plane of carbon using M, it was possible to clearly observe it at the atomic level, and it was confirmed that the microprobe of this example was sufficiently durable for practical use.

Next, a method for manufacturing the microprobe shown in FIG. 4 will be explained.

First, as shown in FIG. 5(a) and FIG. 6(a),
After preparing a p-type silicon semiconductor substrate 27 and forming a silicon oxide (SiO2) film on its main surface for two days, >IQ
s Antimony (sb) in the formation region of the transistor 39
Figure 5(b)
As shown in FIG. 6(b), silicon is electroplanted on the silicon oxide film by vacuum evaporation and processed using photolithography, thereby forming a piece of different material 21 with an IB angle and a substrate. A dissimilar material piece 22 extending in the longitudinal direction of 27 was formed.

The distance between the different material pieces 21 and 22 was about 50 gm, which is the same as the radius of the single crystal to be formed.

Next, the substrate 27 is placed in a reactor heated to 500° C., and a mixed gas of 1l IF6 gas and H2 gas is fed under a reduced pressure of 1 orr at a flow rate of 75 cc/sin and 10 cc/in, respectively. It flowed. In this way, since the nucleation density of the pieces of different material 21 and 22 made of silicon is much higher than that of the silicon oxide film, tungsten crystals grow around these pieces of different material 21 and 22. At this time, the different material piece 21 is sufficiently fine that only a single nucleus grows, so a single nucleus is formed in the different material piece 21, and furthermore, this nucleus maintains a single crystal structure. As a result, a single crystal probe 23 was formed. On the other hand, since the foreign material piece 22 is not so fine that only a single nucleus grows, a polycrystalline gate electrode 24 made of tungsten has grown on this foreign material piece 22 (FIGS. 5(C) and 6). (c)), then the fifth
As shown in FIG. 6(d) and FIG. 6(d), the polycrystalline gate electrode 24 is processed using photolithography technology,
The 0th order obtained polycrystalline gate electrode 24 with a predetermined width,
Thin film resistive materials such as aluminum (AP) and ruthenium are deposited and processed using photolithography technology.
O9) Form the source electrode 26, drain electrode 25, and thin film resistor 33 of the transistor 38 to form a microprobe having the first-stage amplification MOS transistor 39 shown in FIGS. 5(e), 6(e), and 4. In this example, the size of the different material piece 21 was set to 1 gm square for convenience, but after depositing the different material using sputtering method, CVD method, vacuum evaporation method, etc., By processing using ultra-fine processing technology using wires, it is possible to form a piece of dissimilar material 21 of several pm or less, or even 1 pm or less, and if the process conditions are accurately controlled, it is possible to A single crystal probe 23 with a curvature at the molecular or atomic level can be obtained.

This single crystal probe was used as probe electrodes 102 and 103 of the recording/reproducing device shown in FIG. These probe electrodes 102 and 103 are located at a distance (Z) from the surface of the recording medium l.
), and the distance # (Z) is independently controlled by small movements using piezoelectric elements to keep the current constant. Furthermore, the fine movement control mechanism is designed to be able to perform fine movement control in the in-plane (X, Y) directions while keeping the distance (Z) constant. However, these are conventionally known techniques.

Of the two probe electrodes, position detection probe electrode 1
03 is used to detect the atomic arrangement as the position coordinates of the substrate 105. On the other hand, the recording/reproducing probe electrode 102 is connected to the position detecting probe electrode 103.

A certain position ii in the Y direction! It (the interval can be adjusted using the probe electrode interval fine adjustment mechanism 112) is held and used for recording, reproduction, and erasing on the recording layer 101.

These two probe electrodes interlock with each other in the plane (x
, y) direction, but the fine movement control is performed independently in the Z direction. Furthermore, the recording medium l is placed on a high-precision X-Y stage 118 and can be moved to any position (x-y coarse movement mechanism).
. Note that the X-Y direction of the coarse movement mechanism and the X-Y direction of the fine movement mechanism can be made to coincide within the range of error caused by the difference in accuracy of each movement control g9 mechanism.

Next, details of the recording medium used in this example will be described.

A configuration diagram of the recording medium is shown in FIG. P-type Si sea urchin with (111) surface of 1/2 inch in diameter /\-(B doped 0
．． 3■ thickness) as the substrate 105.1. %Ta.

The substrate is cut at point B-B' for the purpose of making the directionality substantially constant when it is installed on the X-Y stage +18 of the recording/reproducing apparatus. Naori-B' point is [21
From the midpoint of the 0th order B-B', which is approximately parallel to the 11th direction, a position of 1-inch toward the center of the substrate is placed at a 1 gra angle and a depth of 0.
A 2μ intestine was etched to create a reference origin (rough) 201. The method for creating the reference origin (coarse) is shown below.

First, polymethyl methacrylate (PMMA; trade name: 0EBR-1000 Tokyo Ohka Kogyo ■), which is an electron beam resist, is applied to a thickness of 11 mm on a Si substrate, and an electron beam is applied at an acceleration voltage of 20 keV and a beam diameter of 0.5 mm. i p, 1IL with taφ
It was drawn to a size of 11 squares. Thereafter, the electron beam irradiated area was dissolved using a special developer. Etching is CF4
Using a mixed gas of H2 and H2, the pressure was 3 Pa and the discharge power was too
Sputter etching was performed using w for 20 minutes. The etching depth at that time was 0.2μ. Finally, PMMA was dissolved using methyl ethyl ketone.

Next, after masking the vicinity of the reference origin (coarse) 201 on the substrate, Cr was deposited as an undercoat layer to a thickness of 50 A using a vacuum evaporation method, and Au was further deposited to a thickness of 400 A using the same method to form a substrate electrode 104.

Next, an LB film (eight layers) of squaryrymubis-6-octyl azulene (hereinafter abbreviated as 5OAZ) was laminated on the Au electrode to form a recording layer 101. The method for forming the recording layer will be described below. First, take 5OAZ at 0.2mgI
A benzene solution dissolved with Otori P was spread on the water phase at 20°C to form a monomolecular film on the water surface. Waiting for the solvent to evaporate, increasing the surface pressure of the monomolecular film to 20 mN/m, and while keeping this constant, the substrate was gently immersed and pulled up in a direction across the water surface at a speed of 3 tars/min, and An 8-layer stack of 5OAZ monolayers was formed on the substrate electrode 104.

Recording/reproducing experiments were conducted using the recording medium 1 created as described above.

The details are described below.

Recording medium 1 having a recording layer 101 in which 5OA28 layers are accumulated
The cutout of the substrate was placed on the XY stage 118 with the BB' direction aligned with a predetermined direction.

Next, move the position detection probe electrode 102 to a position about one layer inside the substrate from B-B', apply a probe voltage of O, SV between the first position detection probe electrode and the Si substrate 105, and then X-Y direction fine movement mechanism 11o.

After temporarily aligning the X direction of No. 111 to a direction substantially parallel to BB', the sixth scan was performed over a length IILm, and then the Y direction (direction perpendicular to the X direction) was also scanned over IB. At this time, the measurement of the surface condition was repeated by changing the way the X-Y coordinate axes were taken, and the obtained arrangement pitch of Si atoms was 6 for each.
．． Adjustments were made to take values closest to 85A and 3.84A. With this adjustment, the X axis of the X/Y direction fine movement mechanism is
The Y axis coincides with the [2111] direction of the substrate and the [011] direction. At this time, at the same time, adjust the coarse movement mechanism in the 0th order X-Y direction so that the X-Y direction of the coarse movement mechanism matches the adjusted X and Y directions of the fine movement mechanism within the control error range of the coarse movement mechanism. to scan the position detection probe electrode and find the reference origin (
The position of 201 (rough) was detected. The reference origin (a) 2
A lattice point of Si was detected using a minute movement mechanism at a position from the center of 01 toward the center of the substrate along the Z mm Y-axis direction. The position detection probe electrode 103 was scanned in the X direction ([21!] direction) with such a grid point (point 0 in FIG. 8) as the origin 301 of the position coordinate axis. At this time, Si [21
By confirming each grid point in 11 directions, directional force control correction and position coordinates (grid pitch) were confirmed. In this operation, the recording/reproducing probe electrode +02 is also connected to the recording layer 10 in conjunction with the position detecting probe electrode 103.
It is moving above 1. In this example, the distance between both probe electrodes is 3II! in the Y-axis direction! It was 1. Although desired information was recorded using the recording/reproducing probe electrode 102, prior to actual recording, the position coordinate axis origin 3
01 (point C' in Figure 8) is the reference origin (
303 was established. The reference origin (fine) is the recording layer 10
It is formed using the electrical memory effect of 1. That is, between the recording/reproducing probe electrode 102 and the Au electrode 104 1. A probe voltage of OV is applied, and a probe current Ip
Using the Z-axis direction fine movement control mechanism 107, the recording/reproducing probe electrode 102 and the recording layer 10 are
The electric memory material (SOAZ, 8 layers of LH film) is placed in a low resistance state (with the zero-order recording/reproducing probe electrode 102 whose distance (Z) to the 1st surface has been adjusted on the + side and the Au electrode 104 on the other side). threshold voltage Vth that changes to ON state)
The above rectangular pulse voltage (18 V, 0.1 μs) was applied to produce an ON state. While maintaining the distance (Z) between the recording/reproducing probe electrode 102 and the recording layer 101, the recording/reproducing probe electrode 102 and the Au electrode
A probe voltage of +OV is applied to FIJI between 104 and probe current I.

When I measured it, a current of about 0.5mIA flowed, and O
The reference origin (fine) 303 was determined by performing 0 or more operations that confirmed the N state. At this time, by turning on the recording layer area of 10n layer angle, the positional information as the origin regarding the reference origin (fine) 303 and the recorded information written later were prevented from being confused and reproduced (
(FIG. 8), the shape of the reference origin (fine) 3o3 is not limited to the shape of this embodiment.

Next, the position detection probe electrode 103 is scanned in the [2111 direction while checking the lattice points, and every 15 pitches (9, 98
Recording was performed using a recording/reproducing probe electrode 103 that moved in conjunction with the wavelength (nm). Therefore record point 30
The pitch of 4 was also 9.98 nm (FIG. 8). Such recording was performed using the same method as that for forming the reference origin (fine) 303, and ONg was applied to the recording layer (SOAZ, 8 layers of LB film) 101.
This was done by creating a state and an OFF state (high resistance state before recording).

After removing the recorded recording medium formed through the above steps from the Ichigiri recording/playback device, it is placed on the X/Y stage again.
8, and a playback experiment was conducted.

First, as during recording, the X-Y direction of the position control system is adjusted to the [2111 and [(1111) directions using the Si grating, and then the position detection probe is moved using the coarse movement mechanism in the X-Y direction. Scan the electrode 103 to find the reference origin (coarse) 2
The position of 01 was detected. Based on the reference origin (coarse) 201, the recording/reproducing probe electrode 102 was scanned using coarse and fine movement mechanisms to detect the position of the reference origin (fine) 303. At this time, it was confirmed that the position detection probe electrode 103 was located on the Si lattice point (position coordinate axis origin 301). At this time, if there is a deviation, use the fine movement mechanism to
-The Y coordinate system is corrected and adjusted so that the position detection probe electrode 103 and the Si lattice point match.
A probe voltage of ev was applied to detect the position of the Si lattice point while scanning in the [21+] direction (X-axis direction). At this time, the recording/reproducing probe electrodes 10 are interlocked at the same time.
2 and the Au electrode 104. Apply a probe voltage of OV and directly read the change in the amount of probe current based on the ON state or OFF state at each recording point, or use the probe 'WL flow'. When the recording/reproducing probe electrode 102 is scanned so that
Recorded information was played back.

The reproduction speed at this time could be made approximately one order of magnitude faster than when using a conventional tungsten probe or the like.

In order to increase the recording capacity, it is also possible to provide a plurality of probe electrodes 102 and perform recording and reproduction using each probe electrode.

In addition, the probe voltage is set to a threshold voltage Vth at which the electric memory material changes from an ON state to an OFF state.
As a result of setting it to OV and tracing the recording position again, it was confirmed that all recorded states were erased and the state transitioned to the OFF state.

Example 2 Next, in another example, the probe electrode 102 shown in FIG. 10 was manufactured by selective deposition. Figure 9 (
As shown in A), the silicon single crystal substrate 27 is partially covered with a silicon oxide film 28, and the opening diameter of the opening 31 is 1.21 mm.
Then, the silicon oxide film 28 was completely removed to expose the surface of the silicon single crystal substrate 27. Crystal formation was performed by a selective epitaxial growth (SEG) method in which silicon was selectively grown in the opening 31 of this substrate (Fig. 9 (B).
) to (D)), as a result, silicon single crystals 23 having a grain size of 15 gm and having a peak surrounded by facets as shown in FIG. 9(D) were formed around the opening 31.

Using this probe electrode, recording and reproduction were performed in the same manner as in the previous example.

This probe electrode +02 has a distance #(
The distance am (7,) is controlled by a piezoelectric element to keep the current constant. Further, the fine movement control mechanism is designed to be able to perform fine movement control in the in-plane (X, Y) directions while keeping the distance (Z) constant. However, these are conventionally known techniques.

The probe electrode 102 is used to detect the relative directional position within the surface of the recording medium and perform recording, reproduction, and erasing. Further, the recording medium 1 is attracted onto a high-precision x-y stage 114 and can be moved to an arbitrary position (X-y coarse movement mechanism). In addition, the X and Y directions of the coarse movement mechanism and the X and Y directions of the fine movement mechanism
The directions match within the error range caused by the difference in precision between the movement control mechanisms.

Next, details of the recording medium used in this example will be described.

A configuration diagram of the recording medium is shown in FIG. 11. FIG. 11(A) is a plan view of the recording medium used in the present invention, and FIG. 11(B)
is a sectional view taken along line AA'. 1/2 inch diameter (1
11) P-type Si wafer with exposed surface (B-doped 0.3m
m thickness) was used as the substrate 104.

The substrate is cut at point BB' in order to maintain substantially constant directionality when installed on the x-y stage 114 of the recording/reproducing apparatus. Note that the BB' point is the [2
It is almost parallel to the 111 direction.

Next, a reference origin (coarse) was created by etching a position 1111 from the midpoint of B-B' toward the center of the substrate to a size of 1 gm square and a depth of 0.2 mm. The method for creating the reference origin (coarse) is shown below.

First, polymethyl methacrylate (PMMA, product name 0EBR-1000 Tokyo Ohka Kogyo ■), which is an electron beam resist, is coated on a Si substrate to a thickness according to TG theory, and an electron beam is applied at an acceleration voltage of 20 keV and a beam diameter of 0.1 μmφ. It was drawn to a size of lpm square. Thereafter, the electron beam irradiated area was dissolved using a special developer. Etching was performed by sputter etching using a mixed gas of GF4 and H2 at a pressure of 3 Pa and a discharge power of 100 W for 20 minutes. The etching depth at that time was 0.2 cm. Finally, PMMA was dissolved using methyl ethyl ketone.

Next, after masking the vicinity of the reference origin (rough) 201 on the substrate, Cr was deposited as an undercoat layer to a thickness of 50 A by vacuum evaporation, and Au was further deposited to a thickness of 400 A by the same method to form the substrate electrode 103.

Next, I, B11 of squarylium-bis-6-octylazulene (hereinafter abbreviated as 5CIAZ) was deposited on the Au electrode.
1 (4 layers) was layered to form a recording layer 101. The recording layer forming method will be described below. First, 5OAZ was added to a concentration of 0.
A benzene solution dissolved at 2 mg/mi' was spread on an aqueous phase at 20°C to form a monomolecular film on the water surface. After waiting for the solvent to evaporate, the surface pressure of the monomolecular film was increased to 20 mN/m, and while keeping this constant, the substrate was gently immersed and pulled out in a direction across the water surface at a speed of 3+s/min, and SO. The 4-layer cumulative film of ^Z monomolecular film is used as the substrate electrode 10.
3.

Recording/playback experiments were conducted using recording medium 1 created by υ.

The details are described below.

A recording medium having a recording layer 101 that has four 5OAZ layers accumulated.
The notch B-B' of the substrate was placed on the x, Y stage 114 in alignment with the predetermined force direction.

Next, the probe electrode 102 is moved to a position about 1 mm inside the substrate from B-B', and the probe electrode and Si substrate 102 are
After applying a probe voltage of 0.6V between the .

Next, scanning was also performed in the X direction (direction perpendicular to the X direction) over lpm. At this time, the measurement of the surface condition was repeated by changing the way the X and Y coordinate axes were taken, and the obtained arrangement pitch of Si atoms was 6. ．． Adjustments were made to take values closest to 85A and 3.84A. Through such adjustment, the X axis of the fine movement mechanism matches the [2111 direction of the Si substrate, and the Y axis matches the [0111 direction].

At the same time, the X and X directions of the coarse movement mechanism were adjusted to match the adjusted X and X directions of the fine movement mechanism within the control error range of the coarse movement mechanism. Next, the probe electrode was scanned using a coarse movement mechanism in the X and X directions, and the position of the reference origin (coarse) 201 was detected. 2mmY from the center of the reference origin (rough)
The reference origin (
Micro) 202 was provided. The reference origin (fine) is the recording layer 1
It is formed using the electric memory effect of 01. That is,
Probe electrode! 1. between 02 and Au electrode i03. O.V.
Apply a probe voltage of 1 and a probe current of ■. is 1O-
Using the fine movement mechanism 107, adjust the probe electrode 1 so that the current is 9A.
The distance fi (Z) between 02 and the surface of the recording layer 101 is adjusted, and the electric memory material (SOAZ-LBH4 layer) is placed in a low resistance state (ON state) with the probe electrode 102 on the + side and the Au electrode on one side. ) threshold voltage vth ON
The above rectangular pulse voltage (18V, 0.1g5) was applied to cause ONN punishment. While maintaining the distance (Z) between the probe electrode 102 and the recording layer 101, 1. When the probe voltage of OV was applied and the probe current 1p was measured, a current of about 0.5 mA flowed, and it was confirmed that it was in the ON state.By operating 0 or more, the reference origin (fine) 202 was set. . At this time, the recording layer area of the square Ion is
By setting the N state, position information regarding the reference origin (fine) 202 and recorded information written later were prevented from being confused and reproduced (Fig. 12), but the reference origin (fine) 2
The shape of 02 is not limited to the shape of this embodiment.

Next, using the reference origin (:e) as the origin on the X and Y coordinates of the probe electrode position control system, the probe electrode 102 was finely moved and scanned to record information at m pitches of 0 and 01 layers.

A schematic diagram of the recording position for each bit on the recording surface 101 is shown in the first diagram.
It is shown in Figure 2. Such records are made using electric memory materials (SOAZ, LB
This was done by creating an ON state and an OFF state (high resistance state before recording) in the lli4 layer).

After the recorded recording medium 1 formed through the above steps was once removed from the recording/reproducing apparatus, it was placed again on the X, Y stage 114, and a reproduction experiment was conducted. First, as during recording, the X and X directions of the position control system are aligned with the [21+] and [0111 directions, respectively, using the Si atomic scale, and then the probe is moved in the x and X directions using the coarse movement mechanism. The position of the reference origin (rough) 201 was detected by scanning the electrode. Based on the reference origin (coarse), the reference origin (fine) was found using coarse and fine movement mechanisms. The reference origin (fine) is X,
The recorded information was reproduced using the origin of the Y coordinate system. At this time, a probe voltage of t and OV for reproduction is applied between the probe electrode 102 and the Au′\L pole 103, and changes in the probe current flowing in the ON state and OFF state regions are directly read, or The probe electrode 10 when the probe electrode 102 is scanned so that the current I is constant.
Servo circuit 1 changes the distance Z between 2 and the surface of the recording layer 101.
By reading through 0B, the reference origin (fine) 20
2 position detection and reproduction of recorded information were performed.

In addition, the probe voltage is set to a threshold voltage Vth at which the electric memory material changes from an ON state to an OFF state.
As a result of setting it to OV and tracing the recording position again, it was confirmed that all recorded states were erased and the state transitioned to the OFF state.

Comparative Example Work In the reproduction experiment of Example 1, the setting of the x and Y coordinate system of the probe electrode scanning mechanism using the atomic scale and the reference origin (
Setting the position coordinate origin based on coarse) and (fine) position detection,
If this is omitted, it is extremely difficult to find a recording/writing area on the recording medium 1, and reproduction is almost impossible.

Example 3 An example in which the x and Y coordinate systems of the probe electrode scanning system were set using a reference scale with a plurality of reference origins and recording and reproduction were performed will be shown below.

FIG. 13 shows a configuration diagram of the recording medium 1 used in this example. As the substrate 104, a 0.7×1.5 cm optically polished glass substrate (l m+w thickness) was used. Then B-B
A reference origin (coarse) 202 of 1 gm square and 0.1 μm deep was created at a position 1 cm from the midpoint of ' to the center of the substrate.

The method for creating the reference origin (coarse) is shown below.

Using a conventionally known photoresist method, a resist material (product name AZ1350) is applied to a thickness of lILm, pre-baked, exposed to ultraviolet light using a mask corresponding to FIG. 12, developed, and post-baked to form a glass A mask pattern was formed on the substrate.

Next, based on the known CFa gas plasma etching method,
The glass surface was etched to a depth of 0 under the conditions of etching power 50W, gas pressure IPa, CFa gas FR, ml 5SCCH.
, dry etched to a thickness of 1 μm. Mask AZ13
50 was removed by washing with acetone.

The substrate was left in saturated vapor of hexamethyldisilazane to perform hydrophobic treatment on the surface. On such a substrate, Cr was deposited as an undercoat layer to a thickness of 50A by vacuum evaporation method,
Furthermore, 400A of Au was vapor-deposited by the same method to form the substrate electrode 103, and on the zero-order Au electrode, an IO of t-butyl substituted product of lutetium siphthalodianine (LLIH(PC)2) was deposited.
A recording layer 101 was formed by laminating layer LB films. At this time, the recording layer +01 was not deposited near the reference origin (coarse) 201.

The conditions for forming a t-butyl substituted LB film of LuH(Pc)2 will be described below.

Solvent: Chloroform/Trimethylbenzene/Acetone = 1/1/2 (V/V) Concentration + 0.5+*g/Peng Water Phase: Pure water, water temperature 20°C Surface pressure: 20 mN/N Substrate vertical speed: 3I5IIZ A recording/reproducing experiment was conducted using the recording medium 1 prepared in more than 10 minutes and the recording/reproducing apparatus described in Example 2. The details are described below.

BB' force direction X of a recording medium l having a recording layer +01 in which 10 layers of t-butyl substituted LB films of LuH(Pc)2 are accumulated, X, Y according to the X axis direction of the Y stage 114
In the same manner as in Example 1, the
, the probe electrode 102 was scanned using the coarse movement mechanism 110 in the Y direction, and the position of the reference origin (coarse) 201 was detected. Note that the probe voltage is 0. It was set as IV. Using the same method as the method for creating the reference origin (fine) in Example 1, a position (on the recording layer 101) located 2 mm toward the center of the substrate in the Y-axis direction from the center of the reference origin (coarse) 201, A first reference origin (fine) 401 was created. In addition, at this time, the first reference origin ( A second reference origin (fine) 402 was created at a position IILm in the Y-axis direction from the fine) 401. The second
The method for creating the reference origin (fine) 4o2 is the same as the first reference origin (fine), and in order to distinguish between the two, each point may have a different shape, but it is not necessary. It is only necessary to take measures to avoid confusion with other general recorded information. Set either the first reference origin 1) 401 or the second reference origin (fine) 402 for the 0th order as the origin of the X and Y axis coordinate system. Information was recorded at 0 and 01B pitches using a fine movement mechanism. The recording method was the same as in Example 1.

After the recorded recording medium 1 formed by the above process is once removed from the recording/reproducing apparatus, the X, Y stage 1 is
14, and a playback experiment was conducted. First, a reference origin (coarse) 201 is found by scanning the probe electrode with the coarse movement mechanism in the x and y directions, which are the same as those used during recording, and based on the reference origin (coarse), a first reference origin (fine) 40! After detecting the second group *i point (fine) 402 using the zero-order fine movement mechanism, which was found using the coarse and fine Ih mechanisms, the first and second
The X and Y coordinate systems were reset so that the direction of the line segment connecting the reference origin (fine) coincided with the Y-axis direction of the probe electrode scanning system. At this time, the first reference origin (fine) 401 was set to be the origin of the related X, Y coordinate system.

In order to increase the recording capacity, it is also possible to set multiple reference points outside the fine movement scanning range and perform recording and playback based on each point. However, any film forming method that can form an extremely uniform film may be used, and the method is not limited to the method of the embodiment. Note that the present invention does not limit the substrate material, its shape, or surface structure in any way.

[Effects of the Invention] As explained above, since the probe electrode of the present invention has a sharp tip with a size on the atomic level, it is possible to perform high-density recording and reproducing on a molecular/atomic level in a recording/reproducing device. .

Moreover, the probe 71 of the present invention! Since the poles are manufactured using photolithography technology, they can be formed in adjacent shapes, and multiple single crystals can be placed on the same substrate, and the shape accuracy can be improved by controlling the manufacturing process. Since the S/N ratio can be improved, the reliability of recording and reproduction is improved, and the mass productivity of probe manufacturing is excellent, leading to low costs.

Furthermore, since it is a single crystal with high rigidity, the area around the probe electrode and recording medium can be made small, leading to miniaturization of the device and improvement in driving speed due to the high natural frequency.

[Brief explanation of the drawing]

Fig. 1 is a perspective view showing an example of a probe electrode according to the present invention, Fig. 2 is a block diagram schematically showing a recording/reproducing device, and Fig. 3 shows the positional relationship between the coordinate axes and the recording position of the present invention. The principle diagram, Figure 4 is a diagram of the probe electrode viewed from the medium side, Figures 5 and 6 are the a-a cross-section and bb-b of Figure 4, respectively.
It is a figure which shows the manufacturing process in a cross section. FIG. 7(A) is a plan view showing one form of the recording medium of the present invention, FIG. 7(B) is a sectional view taken along the line AA', and FIG. 8 is a plan view showing the coordinate axes on the surface of the recording medium of the present invention. FIG. 9 is a schematic diagram showing one form of the positional relationship with the recording position, and is a diagram explaining the principle of crystal growth. FIG. 10 is a block diagram schematically showing a recording/reproducing apparatus for explaining Example 2 of the present invention, FIG. 11(A) is a plan view of the recording medium used in Example 2, and FIG. 11(B) is Its AA' sectional view,
FIG. 12 is a schematic diagram showing the recording position on the surface of the recording material in Example 2, FIG. 13(A) is a plan view of another recording medium used in the present invention, and FIG. 13(B) is the A -A' sectional view. FIG. 14 is a schematic diagram showing the positional relationship of recording areas on the surface of the recording medium of the present invention.

Claims (1)

[Scope of Claims] (1) A recording/reproducing device comprising a probe electrode made of a single crystal, a recording medium provided opposite to the probe electrode, and means for applying a voltage between the probe electrode and the recording medium. . (2) The recording/reproducing device according to claim 1, wherein the probe electrode is made of a single crystal having a specific plane orientation and a pointed portion surrounded by facets made of specific crystal planes. (3) The crystal plane of the facet of the probe electrode is (4
3. The recording/reproducing device according to claim 2, wherein the recording/reproducing device is made of a single crystal having a crystalline structure within the range of (11) to (311). (4) The recording/reproducing device according to claim 1, further comprising a probe electrode equipped with an amplifier adjacent to the single crystal body. (5) The recording/reproducing device according to claim 1, wherein a plurality of the probe electrodes are provided. (6) The recording medium has a positional coordinate axis serving as a reference, and has means for detecting a position on the positional coordinate axis, and records or reproduces recorded information at a position on the recording medium corresponding to the detected coordinate position. 2. The recording/reproducing apparatus according to claim 1, wherein the recording/reproducing apparatus performs erasing. (7) The recording/reproducing apparatus according to claim 6, wherein the reference position coordinate axis is a coordinate axis based on an atomic arrangement. (8) The recording/reproducing apparatus according to claim 6, wherein an origin serving as a reference is provided at at least one of the positional coordinate axis serving as the reference and the position of the recording medium corresponding thereto. (9) The recording/reproducing apparatus according to claim 6, wherein a plurality of position coordinate axes serving as the reference are formed. (10) The recording and reproducing apparatus according to claim 6, characterized in that it has a plurality of probe electrodes, one of which is used for detecting position coordinates, and the other probe electrode is used for recording or reproducing. (11) The recording/reproducing apparatus according to claim 1, wherein the recording medium has an electric memory effect. (12) The recording/reproducing apparatus according to claim 1, wherein the recording medium has a reference scale serving as a reference within the plane, and further comprises means for detecting a relative displacement between the reference scale and the probe electrode in the direction within the plane of the recording medium. (13) The recording/reproducing apparatus according to claim 12, wherein the reference scale is a scale based on an atomic arrangement. (14) The recording/reproducing apparatus according to claim 12, wherein the reference scale has an origin serving as a reference. (15) Claim 12, wherein a plurality of the reference scales are set.
The recording and reproducing device described. (16) The probe electrode has a nucleation density sufficiently higher than that of the substrate or thin film, and only a single nucleus is formed on a part of the main surface of the substrate or a thin film formed on the main surface of the substrate. means for providing a dissimilar material fine enough to grow;
2. The recording/reproducing device according to claim 1, wherein the probe electrode is formed by forming a single crystal by growing a single nucleus in the material. (17) The probe electrode includes a means for laminating an insulating layer on a single crystal substrate, the insulating layer having an opening through which the single crystal substrate is partially exposed, and using the insulating layer as a mask, the single crystal is 2. The recording/reproducing apparatus according to claim 1, wherein the probe electrode is formed by selectively epitaxially growing the probe electrode.