JPH0269969U - - Google Patents
Info
- Publication number
- JPH0269969U JPH0269969U JP14964288U JP14964288U JPH0269969U JP H0269969 U JPH0269969 U JP H0269969U JP 14964288 U JP14964288 U JP 14964288U JP 14964288 U JP14964288 U JP 14964288U JP H0269969 U JPH0269969 U JP H0269969U
- Authority
- JP
- Japan
- Prior art keywords
- applying
- crucible
- molten metal
- metal
- gravity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005484 gravity Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案にかかる装置の概要を示す。第
２図は従来法（チヨクラルスキー法）に基づく装
置の概要を示す。第３図は従来法（ブリツジマン
法）に基づく装置の概要を示す。
１……溶融導電体、２……容器、３……電極、
４……コイル、５……重力方向、６……電流方向
、７……静磁界方向。
FIG. 1 shows an outline of the device according to the present invention. FIG. 2 shows an outline of an apparatus based on the conventional method (Cyochralski method). FIG. 3 shows an outline of an apparatus based on a conventional method (Bridgeman method). 1... Molten conductor, 2... Container, 3... Electrode,
4...Coil, 5...Gravity direction, 6...Current direction, 7...Static magnetic field direction.
Claims (1)
の金属を加熱溶融させる手段を備えた装置におい
て、溶融金属に直流を付加する手段と、溶融金属
に重力と同一方向に電磁力を付加する手段とを設
けたことを特徴とする単結晶製造装置。 In an apparatus equipped with a crucible equipped with a cooling means on the bottom and a means for heating and melting the metal in the crucible, a means for applying a direct current to the molten metal and a means for applying an electromagnetic force to the molten metal in the same direction as gravity A single crystal manufacturing device characterized by being provided with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14964288U JPH0269969U (en) | 1988-11-18 | 1988-11-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14964288U JPH0269969U (en) | 1988-11-18 | 1988-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0269969U true JPH0269969U (en) | 1990-05-28 |
Family
ID=31422059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14964288U Pending JPH0269969U (en) | 1988-11-18 | 1988-11-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269969U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100428699B1 (en) * | 2001-03-06 | 2004-04-27 | 주식회사 사파이어테크놀로지 | Large Crystal Growing Apparatus Having Vertical and Horizontal Temperature Gradients and Growing Method thereof |
-
1988
- 1988-11-18 JP JP14964288U patent/JPH0269969U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100428699B1 (en) * | 2001-03-06 | 2004-04-27 | 주식회사 사파이어테크놀로지 | Large Crystal Growing Apparatus Having Vertical and Horizontal Temperature Gradients and Growing Method thereof |
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