JPH0267279A - Novel electron acceptor and electrically conductive charge-transfer complex containing same acceptor as ingredient - Google Patents
Novel electron acceptor and electrically conductive charge-transfer complex containing same acceptor as ingredientInfo
- Publication number
- JPH0267279A JPH0267279A JP63219580A JP21958088A JPH0267279A JP H0267279 A JPH0267279 A JP H0267279A JP 63219580 A JP63219580 A JP 63219580A JP 21958088 A JP21958088 A JP 21958088A JP H0267279 A JPH0267279 A JP H0267279A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- compound
- compound expressed
- acceptor
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004615 ingredient Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 claims abstract description 71
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 7
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- DTJPUCUJANTIIU-UHFFFAOYSA-N 2-(5,6-dihydro-4h-cyclopenta[d][1,3]dithiol-2-ylidene)-5,6-dihydro-4h-cyclopenta[d][1,3]dithiole Chemical compound C1CCC(S2)=C1SC2=C(S1)SC2=C1CCC2 DTJPUCUJANTIIU-UHFFFAOYSA-N 0.000 claims description 3
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 claims description 3
- JPIIVHIVGGOMMV-UHFFFAOYSA-N ditellurium Chemical compound [Te]=[Te] JPIIVHIVGGOMMV-UHFFFAOYSA-N 0.000 claims description 2
- JIIYLLUYRFRKMG-UHFFFAOYSA-N tetrathianaphthacene Chemical compound C1=CC=CC2=C3SSC(C4=CC=CC=C44)=C3C3=C4SSC3=C21 JIIYLLUYRFRKMG-UHFFFAOYSA-N 0.000 claims description 2
- -1 pyranylidene, N,N'-tetramethyl-p-phenylenediamine Chemical compound 0.000 claims 1
- 239000002904 solvent Substances 0.000 abstract description 19
- YWXLYZIZWVOMML-UHFFFAOYSA-N oxirane-2,2,3,3-tetracarbonitrile Chemical compound N#CC1(C#N)OC1(C#N)C#N YWXLYZIZWVOMML-UHFFFAOYSA-N 0.000 abstract description 8
- 150000003949 imides Chemical class 0.000 abstract description 3
- 150000002978 peroxides Chemical class 0.000 abstract description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 4
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 28
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 21
- 239000000370 acceptor Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 5
- ZGXYRPYBWKDBNM-UHFFFAOYSA-N 2,3,4,5-tetraphenyl-6-pyran-2-ylidenepyran Chemical group O1C=CC=CC1=C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)O1 ZGXYRPYBWKDBNM-UHFFFAOYSA-N 0.000 description 4
- JRNVZBWKYDBUCA-UHFFFAOYSA-N N-chlorosuccinimide Chemical compound ClN1C(=O)CCC1=O JRNVZBWKYDBUCA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 3
- 229940045803 cuprous chloride Drugs 0.000 description 3
- 238000002484 cyclic voltammetry Methods 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000006575 electron-withdrawing group Chemical group 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- ATWLRNODAYAMQS-UHFFFAOYSA-N 1,1-dibromopropane Chemical compound CCC(Br)Br ATWLRNODAYAMQS-UHFFFAOYSA-N 0.000 description 1
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 1
- VEFLKXRACNJHOV-UHFFFAOYSA-N 1,3-dibromopropane Chemical compound BrCCCBr VEFLKXRACNJHOV-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OQNGCCWBHLEQFN-UHFFFAOYSA-N chloroform;hexane Chemical compound ClC(Cl)Cl.CCCCCC OQNGCCWBHLEQFN-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 description 1
- 229910000342 sodium bisulfate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は電子受容体となりうる新規な化合物及び該化合
物を一成分とした高導電性の有機電荷移動錯体に関する
。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a novel compound that can serve as an electron acceptor and a highly conductive organic charge transfer complex containing the compound as one component.
(従来の技術)
有機高導電性物質は銅やアルミニウム等の金属材料に比
べ軽量であること、または腐食性がないことなどの優れ
た利点を持っていることから近年特に注目されつつある
。(Prior Art) Organic highly conductive substances have been attracting particular attention in recent years because they have excellent advantages such as being lighter than metal materials such as copper and aluminum, and being non-corrosive.
有機高導電性物質はまた金属材料に比べて豊富に存在す
る有機質資源を原料にして製造できる点でも優れている
。Organic highly conductive materials are also superior to metal materials in that they can be manufactured from abundant organic resources.
一般に有機物質は電気絶縁体としての性質を有しており
、これに導電性を付与するには電荷移動錯体を形成させ
るのが良く、これまでに種々の電子供与体と電子受容体
が合成され、これらの組合ゼから多数の新しい導電性電
荷移動錯体が提供されている。Generally, organic substances have properties as electrical insulators, and it is best to form charge transfer complexes to impart conductivity to them. Various electron donors and electron acceptors have been synthesized so far. , these combinations have provided a number of new electrically conductive charge transfer complexes.
例えば、本発明者らは電子受容体となる下記式(A>で
示される5、5゛−ビス−(ジシアノメチレン)−5,
5°−ジヒドロ−2,2°−ビタオフェンを見出し、こ
れとテトラチアフルバレン又はテトラチオテトラセンと
の電荷移動錯体が2.2X 10″′4〜3.3X10
−45CIII−1の電気伝導度を示すことを報告した
(J、 Chem、 Soc、 Chem、 Coim
un、 、 1987.1816 >。For example, the present inventors found that 5,5゛-bis-(dicyanomethylene)-5, represented by the following formula (A>),
5°-dihydro-2,2°-vitaophene was discovered, and the charge transfer complex of this with tetrathiafulvalene or tetrathiotetracene was 2.2X 10'''4 to 3.3X10
-45CIII-1 (J, Chem, Soc, Chem, Coim
un, , 1987.1816>.
(発明が解決しようとする課題)
本発明は、上記式(A)で示される電子受容体となる化
合物にさらに電子吸引性基で置換した新規な電子受容体
を提供するものであり、さらにこの電子受容体に適切な
電子供与体を組合ぜることにより改善された導電性を有
する電荷移動錯体を提供することを目的とする。(Problems to be Solved by the Invention) The present invention provides a novel electron acceptor in which the electron acceptor compound represented by the above formula (A) is further substituted with an electron-withdrawing group. The object is to provide a charge transfer complex with improved conductivity by combining an electron acceptor with a suitable electron donor.
(課題を解決するための手段)
本発明は、下記式(I)又は(n)
(式(I>中Xは塩素原子又は臭素原子を表わす)で表
わされる化合物及び該化合物を電子受容体とし他成分の
電子供与体とから導かれた導電性電荷移動錯体を提供す
るものである。(Means for Solving the Problems) The present invention provides a compound represented by the following formula (I) or (n) (wherein X represents a chlorine atom or a bromine atom), and the compound as an electron acceptor. It provides a conductive charge transfer complex derived from an electron donor as another component.
本発明の式(I>化合物は、下記反応式によって合成す
ることができる。The compound of formula (I>) of the present invention can be synthesized by the following reaction formula.
(III)
(IV)
(V)
(Vl)
(IV)又は(Vl)
(I)
(但し、上式中Xは塩素原子又は臭素原子を表わす)
上記化合物(III)を溶媒中N−クロロコハク酸イミ
ドの存在下で加熱することにより化合物(IV)が得ら
れる。また、化合物(V)を溶媒中N−ブロモコハク酸
イミドの存在下で加熱することにより化合物(Vl)が
得られる。(III) (IV) (V) (Vl) (IV) or (Vl) (I) (However, in the above formula, X represents a chlorine atom or a bromine atom) The above compound (III) was added to N-chlorosuccinic acid in a solvent. Compound (IV) is obtained by heating in the presence of imide. Moreover, compound (Vl) can be obtained by heating compound (V) in the presence of N-bromosuccinimide in a solvent.
化合物(IV)又は(Vl ’)は、これを塩化第一銅
の存在下又は非存在下でテトラシアノエチレンオキシド
と共に溶媒中で加熱することにより目的化合物(I)が
得られる。Compound (IV) or (Vl') is heated in a solvent with tetracyanoethylene oxide in the presence or absence of cuprous chloride to obtain the target compound (I).
また、化合物(IV)又は(vl)は、以下の方法によ
って合成することもできる。Moreover, compound (IV) or (vl) can also be synthesized by the following method.
(IV)
(VI)
(■)
チオフェンを鉄粉の存在下で塩化スルフリルと反応させ
ると化合物(IV)が1qられる。また、2.2′ −
ビチオフエンを溶媒の存在下でN−ブロモコハク酸イミ
ドと反応させると化合物(Vl)が得られる。(IV) (VI) (■) When thiophene is reacted with sulfuryl chloride in the presence of iron powder, 1q of compound (IV) is produced. Also, 2.2′ −
Compound (Vl) is obtained by reacting bithiophene with N-bromosuccinimide in the presence of a solvent.
本発明の式(n)化合物は、下記反応式によって合成す
ることができる。The compound of formula (n) of the present invention can be synthesized by the following reaction formula.
(IX)
(I[>
(但し、上式中Xは塩素原子又は臭素原子を表わす)
上記化合物(■)を溶媒中N−クロロコハク酸イミド又
はN−70モコハク酸イミドの存在下で反応させると化
合物(■)が得られる。化合物(■)を過酸化物の存在
下溶媒中で反応させると化合物(IX)が得られる。次
にこの化合物(IX)を溶媒中塩化第一銅の存在下又は
非存在下でテトラシアノエチレンオキシドと反応させる
ことにより目的化合物(n)が得られる。(IX) (I[> (However, in the above formula, X represents a chlorine atom or a bromine atom) When the above compound (■) is reacted in the presence of N-chlorosuccinimide or N-70 mosuccinimide in a solvent, Compound (■) is obtained.Compound (IX) is obtained by reacting compound (■) in a solvent in the presence of peroxide.Next, this compound (IX) is reacted in a solvent in the presence of cuprous chloride. Alternatively, the target compound (n) can be obtained by reacting with tetracyanoethylene oxide in the absence of the compound.
上記1ワられた式(I>又は式(I[>化合物は、これ
を電子受容体とし他成分の電子供与体と組合せて高導電
性電荷移動錯体を合成することができる。The above compound of formula (I> or formula (I)) can be used as an electron acceptor and combined with other electron donors to synthesize a highly conductive charge transfer complex.
本発明の電荷移動錯体は、通常有機溶媒中で上記式(I
)又は式(II)化合物と電子供与体とを混ぜ合わすこ
とにより合成される。有機溶媒としてはベンゼン、トル
エン、クロロベンゼン、テトラヒドロフラン、アセトニ
トリル、ジクロロメタン等を挙げることができる。また
上記方法の他、有機溶媒を用いずに相当量の式(I>又
は式(II)化合物と電子供与体とを乳鉢等でよく混合
することによっても合成することができる。The charge transfer complex of the present invention is usually prepared in an organic solvent by the above formula (I
) or synthesized by mixing the compound of formula (II) and an electron donor. Examples of organic solvents include benzene, toluene, chlorobenzene, tetrahydrofuran, acetonitrile, and dichloromethane. In addition to the above method, it can also be synthesized by thoroughly mixing a considerable amount of the compound of formula (I> or formula (II)) and an electron donor in a mortar or the like without using an organic solvent.
上記電子供与体としては各種のものが適用されるが、本
発明においては、2,2°、5.5’−テトラチアフル
バレン、 5,6,11.12−テトラチオテトラセ
ン、ヘキサメチレンテトラチアフルバレン、ヘキサメチ
レンテトラテルラフルバレン,テトラフエニルビピラニ
リデン, N、N’−テトラメチル−〇−7エニレンジ
アミン,アセナフテンジテルリド及びビスエチレンジチ
オテトラチアフルバレンから選ばれた化合物が高導電性
を与える電子供与体成分として好ましい。Various types of electron donors can be used as the electron donor, but in the present invention, 2,2°, 5,5'-tetrathiafulvalene, 5,6,11,12-tetrathiotetracene, hexamethylenetetrathiaful A compound selected from valene, hexamethylenetetratellahfulvalene, tetraphenylbipyranylidene, N,N'-tetramethyl-〇-7enylenediamine, acenaphthene ditelluride and bisethylenedithiotetrathiafulvalene is highly It is preferable as an electron donor component that provides conductivity.
本発明の錯体は、式(I)又は式(II)化合物と電子
供与体とがモル比で1:1又は1:2の割合で構成され
たものが好ましい。The complex of the present invention is preferably composed of the compound of formula (I) or formula (II) and the electron donor in a molar ratio of 1:1 or 1:2.
以下本発明を実施例によって具体的に説明するが、本発
明はこれら実施例に限定されるものではない。EXAMPLES The present invention will be specifically explained below with reference to Examples, but the present invention is not limited to these Examples.
(実施例)
実施例1 比較例1
前記式(I[I)化合物、即ち、5.5′−ジクロ口−
2,2’ −じチオフェン235mgに酢酸2Ildl
とクロロホルム4Inlとを加え、これにN−クロロコ
ハク酸イミド291moを加えて20時間緩やかに還流
した。(Examples) Example 1 Comparative Example 1 The compound of formula (I[I), i.e., 5.5'-dichloro-
235 mg of 2,2'-dithiophene and 2Ildl of acetic acid
and 4 Inl of chloroform were added thereto, 291 mo of N-chlorosuccinimide was added thereto, and the mixture was gently refluxed for 20 hours.
反応混合物を水中に投入してクロロホルムで抽出し、有
機層を水、5%重曽水及び水の順で洗浄後、無水硫酸マ
グネシウムで乾燥し濃縮した。得られた固体をヘキサン
を用いてシリカゲルカラムを通し、次いで濃縮してへキ
サンから再結晶して前記式(IV)化合物116m(1
849た。このようにして1qられた式(IV)化合物
2.43(J、テトラシアノエチレンオキシド11.5
(1、塩化第一銅5.5旬にアルミナ処理をした1、3
−ジブロモプロパン130dを加えて6時間加熱還流し
た。反応液をシリカゲルクロマトグラフィーでジクロロ
メタンを用いて二度展開し、Rfo、5の赤色成分を集
めて濃縮し、さらにアセトニトリルから再結晶して目的
化合物である前記式(I>化合物(X=α) 880
mgを得た。The reaction mixture was poured into water and extracted with chloroform, and the organic layer was washed with water, 5% sodium chloride water, and water in that order, dried over anhydrous magnesium sulfate, and concentrated. The obtained solid was passed through a silica gel column using hexane, then concentrated and recrystallized from hexane to obtain 116 m (1
849. The compound of formula (IV) 2.43 (J, tetracyanoethylene oxide 11.5
(1, cuprous chloride 5.5 alumina treated 1,3
- 130 d of dibromopropane was added and heated under reflux for 6 hours. The reaction solution was developed twice using dichloromethane using silica gel chromatography, and the red component of Rfo, 5 was collected and concentrated, and further recrystallized from acetonitrile to obtain the target compound, the above formula (I>compound (X=α) 880
mg was obtained.
融点 300℃以上
IR(にBr) νc8 2217cm−4M5
m/e 360(M” )
元素分析
HN
理論値(%) 46.53 0.55 15.5
1実測値(%) 46.55 0.57 15.
42サイクリツクボルタメトリー
Ey20.18.−0.06V (VS、 ^I
IJ/A11l(1’。Melting point 300℃ or higher IR (Br) νc8 2217cm-4M5
m/e 360 (M”) Elemental analysis HN Theoretical value (%) 46.53 0.55 15.5
1 Actual value (%) 46.55 0.57 15.
42 Cyclic Voltammetry Ey20.18. -0.06V (VS, ^I
IJ/A11l (1'.
0、18 Bo3 NCe0 a 、 CH2Cl2
)上記得られた式(I)化合物(X=α) 10mgを
アセトニトリル3Inlに溶かした溶液と下記化学式で
示される2、2°、5,5“−テトラチアフルバレン(
TTF)68mgをアセトニトリル5dに溶がした溶液
とを混合し、生成した沈澱を濾別して式(I>化合物(
X=α)とTTFとの1:1 (モル)錯体12mgを
得た。0, 18 Bo3 NCe0 a , CH2Cl2
) A solution of 10 mg of the compound of formula (I) obtained above (X=α) dissolved in 3 Inl of acetonitrile and 2,2°,5,5″-tetrathiafulvalene (
A solution of 68 mg of TTF) dissolved in 5d of acetonitrile is mixed with a solution of 5d of acetonitrile, and the resulting precipitate is filtered to obtain a compound of formula (I>compound (
12 mg of a 1:1 (mol) complex of X=α) and TTF were obtained.
TTF
上記と同様にして式(I)化合物(X=α)を電子受容
体として用い、下記化学式で示される5、6,11.1
2−テトラチオテトラセン(TTT)、ヘキサメチレン
テトラテルラフルバレン(HMTTeF)、テトラフェ
ニルビピラニリデン(TPBP) 、テトラメチル−p
−7エニレンジアミン(TMPDA)及びアセナフテン
ジチルリド(八〇Te>を電子供与体として第1表に示
される溶媒を用いて1:1 (モル)錯体を得た。TTF 5, 6, 11.1 shown by the following chemical formula using the formula (I) compound (X = α) as an electron acceptor in the same manner as above.
2-tetrathiotetracene (TTT), hexamethylenetetraterrafulvalene (HMTTeF), tetraphenylbipyranylidene (TPBP), tetramethyl-p
A 1:1 (mol) complex was obtained using -7 enylene diamine (TMPDA) and acenaphthene dithyllide (80Te> as electron donors and the solvents shown in Table 1).
TPBP TMPDA TTT HMTTeF DTe 上記得られた各電荷移動鏡体の物性を第1表に示した。TPBP TMPDA TTT HMTTeF DTe Table 1 shows the physical properties of each charge transfer mirror obtained above.
比較例1として、従来知られている前記式(A)化合物
を電子受容体とし、TTF及びTTTを電子供与体とし
て得られた錯体(1:1(モル))の電気伝導度を第1
表に併せて示した。As Comparative Example 1, the electrical conductivity of a complex (1:1 (mol)) obtained using the conventionally known compound of formula (A) as an electron acceptor and TTF and TTT as electron donors was
It is also shown in the table.
なお、第1表中合成溶媒のAはアセトニトリル、Cはモ
ノクロロベンゼンをそれぞれ表わす。また電気伝導度は
圧縮成形したベレットを第4点法で測定した。In Table 1, A and C of the synthesis solvents represent acetonitrile and monochlorobenzene, respectively. Further, the electrical conductivity was measured using the 4-point method using a compression-molded pellet.
第1表
実施例2
前記式(V)化合物、即ち、3.3′ −ジブロモ−2
,2’−ビチオフエン1 、30gに酢M5dとクロロ
ホルム5rnIlを加え室温で撹拌した。これにN−ブ
ロモコハク酸イミド1.50(lを加えて5時間加熱還
流させた。反応混合物を水中に投入してクロロホルムで
抽出し、有機層を水、5%重費水及び水の順で洗浄後、
無水硫酸マグネシウムで乾燥し濃縮した。得られた固体
をクロロホルム−ヘキサンから再結晶して前記式(Vl
)化合物1.57gを得た。Table 1 Example 2 Compound of formula (V), i.e. 3.3'-dibromo-2
Vinegar M5d and chloroform 5rnIl were added to 30 g of ,2'-bithiophene 1 and stirred at room temperature. 1.50 (l) of N-bromosuccinimide was added to this and heated under reflux for 5 hours. The reaction mixture was poured into water and extracted with chloroform, and the organic layer was extracted with water, 5% heavy water, and water in that order. After washing,
It was dried over anhydrous magnesium sulfate and concentrated. The obtained solid was recrystallized from chloroform-hexane to give the formula (Vl
) 1.57 g of compound was obtained.
この化合物679mgとテトラシアノエチレンオキシド
1.63gに無水1.3−ジブロモプロパン25dを加
えて3時間加熱還流後テトラシアノエチレンオキシド4
06mgを追加してさらに1時間加熱還流させた。これ
を室温に戻し、シリカゲルカラムに塩化メチレンを用い
て2回通して赤色帯を分取し濃縮してアセトニトリルか
ら再結晶して目的化合物である前記式(I)化合物(X
=Br) 65m(Jを得た。25 d of anhydrous 1,3-dibromopropane was added to 679 mg of this compound and 1.63 g of tetracyanoethylene oxide, and after heating under reflux for 3 hours, 4 g of tetracyanoethylene oxide was added.
06 mg was added and the mixture was further heated under reflux for 1 hour. This was returned to room temperature, passed twice through a silica gel column using methylene chloride, the red band was fractionated, concentrated, and recrystallized from acetonitrile to obtain the target compound, the compound of formula (I) (X
=Br) 65m (J was obtained.
融点 300℃以上
IR(に8「) νCN 2224cm−1M5
m/e 450(M+)
元素分析
CHN
理論値(%) 37.34 0.44 12.4
5実測値(%) 37.30 0.43 12.
37サイクリツクボルタメトリー
Ey20.20.0.03V (vs、 Aa
/A(lcf。Melting point 300℃ or higher IR (N8") νCN 2224cm-1M5
m/e 450 (M+) Elemental analysis CHN Theoretical value (%) 37.34 0.44 12.4
5 Actual value (%) 37.30 0.43 12.
37 Cyclic Voltammetry Ey20.20.0.03V (vs, Aa
/A(lcf.
0、18 Bo3 NCe04 、 Ct12(f’
2 )上記得られた式(I>化合物(X=Br)を電子
受容体とし、第1表に示される電子供与体及び合成溶媒
を用いて実施例1と同様にして式(1)化合物(X=B
r)と電子供与体との1:1 (モル)又は1:2 (
モル)錯体を)qだ。0, 18 Bo3 NCe04, Ct12(f'
2) Using the compound of formula (I> compound (X=Br) obtained above as an electron acceptor and using the electron donor and synthetic solvent shown in Table 1, the compound of formula (1) ( X=B
r) and electron donor in 1:1 (mol) or 1:2 (
mole) complex) is q.
得られた各電荷移動錯体の物性を第2表に示した。Table 2 shows the physical properties of each charge transfer complex obtained.
なお、第2表中合成溶媒A及びCは第1表と同じであり
、*印の錯体は電子受容体:電子供与体=1:2(モル
)であることを示す。また第2表中の電子供与体)−I
MTTF (ヘキサメチレンテトラチアフルバレン)は
下記化学式で示される化合物である。Note that the synthesis solvents A and C in Table 2 are the same as in Table 1, and the complexes marked with * indicate that the ratio of electron acceptor to electron donor is 1:2 (mol). Also, the electron donor in Table 2)-I
MTTF (hexamethylenetetrathiafulvalene) is a compound represented by the chemical formula below.
第2表
実施例3
前記式(Vl)化合物、即ち、チエノジヂオフェン87
1mgに酢酸5fr1flとクロロホルム5IIdlと
を加え室温で撹拌した。これにN−ブロモコハク酸イミ
ド1.58gを加えて室温で1時間、50〜60℃で1
時間撹拌した。次いで析出した固体が溶けるまで二硫化
炭素を加えて水、5%重曹水及び水の順で洗浄し無水硫
酸マグネシウムで乾燥後濃縮した。再び二硫化炭素に溶
かしシリカゲルカラムを通して前記式(■)化合物(X
=Br) 1.36gを得た。Table 2 Example 3 Compound of formula (Vl), i.e. thienodiophene 87
1 fl of acetic acid and 5 II dl of chloroform were added to 1 mg, and the mixture was stirred at room temperature. 1.58 g of N-bromosuccinimide was added to this, and the mixture was heated at room temperature for 1 hour and at 50 to 60°C for 1 hour.
Stir for hours. Next, carbon disulfide was added until the precipitated solid was dissolved, and the mixture was washed with water, 5% sodium bicarbonate solution, and water in that order, dried over anhydrous magnesium sulfate, and concentrated. The above formula (■) compound (X
=Br) 1.36g was obtained.
上記式(■)化合物(X=Br) 177+ngを塩
化メチレン15rIJ!に溶解し、これにトクロロ過安
息香酸216mOの塩化メチレン5d溶液を加えて2日
間加熱還流させた。この反応液を濃亜硫酸水素ナトリウ
ム水溶液中に注ぎ、次いで塩化メチレンで抽出し、有機
層を5%重曽水で洗浄後、水洗、乾燥して濃縮した。得
られた固体をシリカゲルカラムで塩化メチレンを用いて
展開し、RfO,7の部分を採取した。溶媒を減圧留去
して前記(IX)化合物(X=Br) 90mgを得た
。177+ng of the above formula (■) compound (X=Br) was added to 15rIJ of methylene chloride! A solution of 216 mO of tochloroperbenzoic acid in 5 d of methylene chloride was added thereto, and the mixture was heated under reflux for 2 days. The reaction solution was poured into a concentrated aqueous sodium bisulfite solution, and then extracted with methylene chloride. The organic layer was washed with 5% sodium bisulfate water, water, dried, and concentrated. The obtained solid was developed on a silica gel column using methylene chloride, and a portion of RfO,7 was collected. The solvent was distilled off under reduced pressure to obtain 90 mg of the compound (IX) (X=Br).
上記式(IX)化合物(X=Br> 89moとテトラ
シアノエチレンオキシド63mgに1.2−ジブロモエ
タン5mRを加えて2日間加熱還流させた。次いで室温
まで冷却し、シリカゲルカラムで塩化メチレンを用いて
展開し、Rfo、15の赤色部分を採取した。5 mL of 1,2-dibromoethane was added to the above formula (IX) compound (X = Br> 89 mo and 63 mg of tetracyanoethylene oxide, and the mixture was heated under reflux for 2 days. Then, it was cooled to room temperature and developed on a silica gel column using methylene chloride. Then, the red part of Rfo, 15 was collected.
溶媒を減圧留去して目的化合物である前記式(II)化
合物5mgを得た。The solvent was distilled off under reduced pressure to obtain 5 mg of the target compound, the compound of formula (II).
融点 300℃以上
IR(にBr) 1.IcN 2222Cnl”M
S m/e 354(M+)
元素分析
HN
理論値(%) 47.43 0.56 15.8
1実測値(%) 47.51 0.55 15.
79サイクリツクボルタメトリー
E% 0.28.−0.05V (vs、 A
g/^aC1゜0.1HBo3 NciPo 4 、
CH2Cl2)上記得られた式(II)化合物を電子
受容体とし、第3表に示される電子供与体及び合成溶媒
を用いて実施例1と同様にして式(II)化合物と電子
供与体との1:1 (モル)又は1:2 (モル)錯体
を得た。Melting point: 300°C or higher IR (Br) 1. IcN 2222Cnl”M
S m/e 354 (M+) Elemental analysis HN Theoretical value (%) 47.43 0.56 15.8
1 Actual value (%) 47.51 0.55 15.
79 Cyclic Voltammetry E% 0.28. -0.05V (vs, A
g/^aC1゜0.1HBo3 NciPo 4,
CH2Cl2) Using the compound of formula (II) obtained above as an electron acceptor, the reaction between the compound of formula (II) and the electron donor was carried out in the same manner as in Example 1 using the electron donor and synthetic solvent shown in Table 3. 1:1 (mol) or 1:2 (mol) complexes were obtained.
iFiられた各電荷移動錯体の物性を第3表に示した。Table 3 shows the physical properties of each charge transfer complex subjected to iFi.
なお、第3表中合成溶媒八及びCは第1表と同じであり
、*印の錯体は電子受容体:電子供与体=1:2(モル
)であることを示す。In Table 3, synthetic solvents 8 and C are the same as in Table 1, and complexes marked with * indicate that the ratio of electron acceptor to electron donor is 1:2 (mol).
第
表
(発明の効果)
本発明の式(I>又は(II)の化合物及びこの化合物
を電子受容体とする電荷移動錯体はいずれも新規物質で
あり、上記化合物は、従来電子受容体として知られる化
合物の基本骨格に特定の電子吸引性基が置換された構造
よりなるため、これより得られた鏡体は従来のものに較
ぺて導電性が著しく高いという特徴を有している。Table 1 (Effects of the Invention) The compound of formula (I> or (II)) of the present invention and the charge transfer complex using this compound as an electron acceptor are all new substances, and the above compounds are conventionally known as electron acceptors. Since the basic skeleton of the compound is substituted with a specific electron-withdrawing group, the mirror body obtained from this structure is characterized by significantly higher conductivity than conventional mirror bodies.
Claims (4)
式、化学式、表等があります▼(II) で表わされる化合物。(1) Formula (I) or (II) below ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (I) (X in formula (I) represents a chlorine atom or bromine atom) ▲ There are mathematical formulas, chemical formulas, tables, etc. A compound represented by ▼(II).
物を電子受容体とし、他成分の電子供与体とから導かれ
た導電性電荷移動錯体。(2) A conductive charge transfer complex derived from a compound represented by formula (I) or (II) of claim 1 as an electron acceptor and an electron donor as another component.
ルバレン,5,6,11,12−テトラチオテトラセン
,ヘキサメチレンテトラチアフルバレン,ヘキサメチレ
ンテトラテルラフルバレン,テトラフエニルビピラニリ
デン,N,N’−テトラメチル−p−フェニレンジアミ
ン,アセナフテンジテルリド及びビスエチレンジチオテ
トラチアフルバレンから選ばれた化合物である請求項2
記載の導電性電荷移動錯体。(3) The electron donor is 2,2',5,5'-tetrathiafulvalene, 5,6,11,12-tetrathiotetracene, hexamethylenetetrathiafulvalene, hexamethylenetetraterrafulvalene, tetraphenyl bi Claim 2 which is a compound selected from pyranylidene, N,N'-tetramethyl-p-phenylenediamine, acenaphthene ditelluride and bisethylene dithiotetrathiafulvalene.
The electrically conductive charge transfer complexes described.
である請求項2又は3記載の導電性電荷移動錯体。(4) The molar ratio of electron acceptor and electron donor is 1:1 to 2
The conductive charge transfer complex according to claim 2 or 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63219580A JPH0651696B2 (en) | 1988-08-31 | 1988-08-31 | Novel electron acceptor and conductive charge transfer complex containing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63219580A JPH0651696B2 (en) | 1988-08-31 | 1988-08-31 | Novel electron acceptor and conductive charge transfer complex containing the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5326440A Division JP2743803B2 (en) | 1993-12-24 | 1993-12-24 | Novel electron acceptor and conductive charge transfer complex containing it |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0267279A true JPH0267279A (en) | 1990-03-07 |
JPH0651696B2 JPH0651696B2 (en) | 1994-07-06 |
Family
ID=16737754
Family Applications (1)
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JP63219580A Expired - Lifetime JPH0651696B2 (en) | 1988-08-31 | 1988-08-31 | Novel electron acceptor and conductive charge transfer complex containing the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243154A (en) * | 1990-10-16 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for controlling a hydraulic elevator |
-
1988
- 1988-08-31 JP JP63219580A patent/JPH0651696B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243154A (en) * | 1990-10-16 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for controlling a hydraulic elevator |
Also Published As
Publication number | Publication date |
---|---|
JPH0651696B2 (en) | 1994-07-06 |
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