JPH0262720U - - Google Patents

Info

Publication number

JPH0262720U

JPH0262720U JP14152888U JP14152888U JPH0262720U JP H0262720 U JPH0262720 U JP H0262720U JP 14152888 U JP14152888 U JP 14152888U JP 14152888 U JP14152888 U JP 14152888U JP H0262720 U JPH0262720 U JP H0262720U

Authority

JP

Japan

Prior art keywords

layer

single crystal

semiconductor film

crystal semiconductor

silicon oxide

Prior art date

1988-10-29

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
• 238000009792 diffusion process Methods 0.000 claims description 5
• 239000013078 crystal Substances 0.000 claims 6
• 239000004065 semiconductor Substances 0.000 claims 6
• 239000012535 impurity Substances 0.000 claims 3
• 239000004020 conductor Substances 0.000 claims 2
• 230000001590 oxidative effect Effects 0.000 claims 1
• 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
• 238000000034 method Methods 0.000 description 2
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1
• WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
• 229910052721 tungsten Inorganic materials 0.000 description 1
• 239000010937 tungsten Substances 0.000 description 1