JPH0261152B2 - - Google Patents
Info
- Publication number
- JPH0261152B2 JPH0261152B2 JP56144602A JP14460281A JPH0261152B2 JP H0261152 B2 JPH0261152 B2 JP H0261152B2 JP 56144602 A JP56144602 A JP 56144602A JP 14460281 A JP14460281 A JP 14460281A JP H0261152 B2 JPH0261152 B2 JP H0261152B2
- Authority
- JP
- Japan
- Prior art keywords
- parts
- polyethylene terephthalate
- weight
- glycol
- modified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 33
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 33
- -1 Polyethylene terephthalate Polymers 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 7
- 229920001515 polyalkylene glycol Polymers 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 125000001424 substituent group Chemical group 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 17
- 239000002202 Polyethylene glycol Substances 0.000 description 12
- 229920001223 polyethylene glycol Polymers 0.000 description 12
- 230000005611 electricity Effects 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- WOZVHXUHUFLZGK-UHFFFAOYSA-N dimethyl terephthalate Chemical compound COC(=O)C1=CC=C(C(=O)OC)C=C1 WOZVHXUHUFLZGK-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 150000002009 diols Chemical class 0.000 description 3
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 description 3
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N terephthalic acid group Chemical group C(C1=CC=C(C(=O)O)C=C1)(=O)O KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- 229940043375 1,5-pentanediol Drugs 0.000 description 1
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 1
- VTDMBRAUHKUOON-UHFFFAOYSA-N 4-[(4-carboxyphenyl)methyl]benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C=C1 VTDMBRAUHKUOON-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- FNGGVJIEWDRLFV-UHFFFAOYSA-N anthracene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=CC3=C(C(O)=O)C(C(=O)O)=CC=C3C=C21 FNGGVJIEWDRLFV-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PDXRQENMIVHKPI-UHFFFAOYSA-N cyclohexane-1,1-diol Chemical compound OC1(O)CCCCC1 PDXRQENMIVHKPI-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229920006352 transparent thermoplastic Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
Description
本発明は静電気シールド性および機械的強度が
すぐれ、かつ高度な透明性を有するICチツプ用
収納容器に関するものである。
近年、電気・電子機器製品の高密化、精密化、
小型化にはめざましいものがあり、それにつれて
部品の製造、組立、半完成品や完成品の保管、運
搬などどの際に生じる静電気障害が大きな問題と
なつている。なかでもIC(半導体集積回路)チツ
プ、とくにMOS型ICチツプなどはわずかな静電
気によつてもゲート破壊を起こし易く、保管や運
搬中の振動や作業者の身体から発する静電気など
により破壊されて不良品になるという問題がある
ため、ICチツプ用収納容器には高度な静電気シ
ールド性が要求されている。
従来ICチツプ用収納容器素材としては熱可塑
性樹脂に導電性カーボンブラツクを練り込むこと
により帯電防止性能を付与したものが一般的に用
いられているが、この素材からなる容器は多量の
カーボンブラツクを含有することに起因して樹脂
本来の機械的強度が損なわれ、しかも黒色不透明
な素材を使用しているため内容物の確認ができな
いという欠点を有している。
一方とくに透明性が要求されるICチツプ用収
納容器においては、透明性熱可塑性樹脂にイオン
導電性の界面活性剤を練り込んだ素材を用いられ
ているが、この素材からなる容器は帯電防止性
能、とくに表面固有抵抗が1012Ω以上と不十分で
あり、しかも帯電防止性能が表面部分の払拭等に
より一時的に低下したり、また使用中に経時的に
減少するため、収納したICチツプの不良率増大
を招き易いという欠点がある。
そこで本発明者らは高度でしかも持続性のある
静電気シールド性を有すると共に、機械的強度が
高く、透明性のすぐれたICチツプ用収納容器の
取得を目的として検討した結果、容器素材として
特定の変性ポリエステルと添加剤系からなる組成
物を用いることにより、上記目的が効果的に達成
できることを見出し本発明に到達した。
すなわち本発明は(A)ポリエチレンテレフタレー
トに分子量が1000〜10000のポリアルキレングリ
コールを1〜20重量%共重合せしめた変性ポリエ
チレンテレフタレート100重量部に対し、(B)一般
式Ar−SO31/mMe(ただし式中のArは置換基を有
するかまたは有さない芳香族残基、mは1〜3の
整数、Meは金属原子を示す)で表わされるスル
ホン酸金属塩の少なくとも1種0.01〜10重量部お
よび(C)ポリエチレンテレフタレート0〜500重量
部を配合した組成物を成形してなるICチツプ用
収納容器を提共するものである。
本発明のICチツプ用収納容器は、それ自体透
明性でかつ導電性の改良された変性ポリエチレン
テレフタレートに、少割合の導電性向上添加剤(B)
を含有せしめ、さらに必要に応じて未変性のポリ
エチレンテレフタレート(C)で変性成分および添加
剤(B)を希釈した組成物から構成されているため、
ポリエチレンテレフタレート自体のすぐれた透明
性および機械的強度が好適に維持され、静電気シ
ールド性能も例えば表面固有抵抗が1011Ω以下の
範囲まで高められ、しかもこの静電気シールド性
能の持続性もすぐれるという効果を発揮する。
本発明の容器構成素材たる(A)変性ポリエチレン
テレフタレートとはポリエチレンテレフタレー
ト、すなわちジカルボン酸成分の80モル%以上が
テレフタル酸(またはそのエステル形成性誘導
体)であり、ジオール成分の80モル%以上がエチ
レングリコール(またはそのエステル形成性誘導
体)である熱可塑性ポリエステルの重合時に分子
量1000〜10000、望ましくは2000〜6000のポリア
ルキレングリコールを1〜20重量%、望ましくは
3〜10重量%添加して得られるいわゆる共重合型
のブロツクポリエーテルエステルである。
ここで分子量が1000〜10000のポリアルキレン
グリコールとしてはポリエチレングリコール、ポ
リピロピレングリコール、ポリテトラメチレング
リコール、これらの共重合体およびメトキシポリ
エチレングリコールなどが挙げられる。これらの
アルキレングリコールの分子量が1000以下では成
形品の静電気シールド性改良効果が不十分であ
り、10000以上では透明性が低下するため好まし
くない。
なお変性ポリエチレンテレフタレート(A)には、
そのジカルボン酸成分およびジオール成分の各々
20モル%以下でかつ透明性を阻害しない範囲にお
いて、イソフタル酸、フタル酸、2,6−ナフタ
レンジカルボン酸、1,5−ナフタレンジカルボ
ン酸、ビス(p−カルボキシフエニル)メタン、
アントラセンジカルボン酸、4,4′−ジフエニル
エーテルジカルボン酸などの芳香族ジカルボン
酸、アジピン酸、セバシン酸、アゼライン酸、ド
デカンジオン酸などの脂肪族ジカルボン酸、1,
3−シクロヘキサンジカルボン酸、1,4−シク
ロヘキサンジカルボン酸などの脂環式ジカルボン
酸あるいはそれらのエステル形成性誘導体などの
他のジカルボン酸成分およびプロピレングリコー
ル、1,4−ブタンジオール、ネオペンチルグリ
コール、1,5−ペンタンジオール、1,6−ヘ
キサンジオール、デカメチレングリコール、シク
ロヘキサンジオールあるいは、そのエステル形成
性誘導体などの他のジオール成分を共重合せしめ
ることができる。
変性ポリエチレンテレフタレート(A)の変性成分
たるポリアルキレングリコールの共重合量は本発
明の効果に大きく影響し、1重量%以下では静電
気シールド性改良効果が不十分であり、20重量%
以上では容器の透明性低下が著しくなるため好ま
しくない。
本発明で導電性向上添加剤として使用する(B)ス
ルホン酸金属塩は上記一般式で示され、具体例と
しては下記のものが挙げられるが、中でもアルキ
ルベンゼンスルホン酸ナトリウムの使用が望まし
い。
The present invention relates to an IC chip storage container that has excellent static electricity shielding properties and mechanical strength, and has a high degree of transparency. In recent years, electrical and electronic equipment products have become more dense and precise.
There has been a remarkable progress in miniaturization, and as a result, static electricity hazards that occur during parts manufacturing, assembly, storage, and transportation of semi-finished and finished products have become a major problem. Among these, IC (semiconductor integrated circuit) chips, especially MOS type IC chips, are susceptible to gate destruction due to even a small amount of static electricity, and can be destroyed by vibrations during storage or transportation or static electricity emitted from the worker's body. Because of the problem of quality products, storage containers for IC chips are required to have high static electricity shielding properties. Conventionally, the material used for storage containers for IC chips is thermoplastic resin that has been kneaded with conductive carbon black to provide antistatic properties.However, containers made of this material contain a large amount of carbon black. Due to the content, the inherent mechanical strength of the resin is impaired, and furthermore, since a black, opaque material is used, the content cannot be confirmed. On the other hand, IC chip storage containers that require particularly high transparency are made of transparent thermoplastic resin mixed with ion-conductive surfactants, but containers made of this material have antistatic properties. In particular, the surface resistivity is insufficient at 10 12 Ω or more, and the antistatic performance decreases temporarily due to wiping the surface, etc., and also decreases over time during use, so it is difficult to store IC chips. This has the disadvantage that it tends to increase the defective rate. Therefore, the present inventors conducted studies with the aim of obtaining an IC chip storage container that has high and long-lasting static electricity shielding properties, high mechanical strength, and excellent transparency. The inventors have discovered that the above object can be effectively achieved by using a composition comprising a modified polyester and an additive system, and have thus arrived at the present invention. That is, the present invention is based on (A) 100 parts by weight of modified polyethylene terephthalate obtained by copolymerizing polyethylene terephthalate with 1 to 20% by weight of polyalkylene glycol having a molecular weight of 1000 to 10000, (B) general formula Ar-SO 3 1/mMe (In the formula, Ar is an aromatic residue with or without a substituent, m is an integer of 1 to 3, and Me is a metal atom.) At least one sulfonic acid metal salt 0.01 to 10 The present invention also provides an IC chip storage container formed by molding a composition containing 0 to 500 parts by weight of polyethylene terephthalate (C). The IC chip storage container of the present invention is made of modified polyethylene terephthalate, which itself is transparent and has improved conductivity, and a small proportion of a conductivity-improving additive (B).
The modified component and additive (B) are further diluted with unmodified polyethylene terephthalate (C) as necessary.
The excellent transparency and mechanical strength of polyethylene terephthalate itself are suitably maintained, and the electrostatic shielding performance is improved to, for example, a surface resistivity of 10 11 Ω or less, and the sustainability of this electrostatic shielding performance is also excellent. demonstrate. Modified polyethylene terephthalate (A), which is the container constituent material of the present invention, is polyethylene terephthalate, that is, 80 mol% or more of the dicarboxylic acid component is terephthalic acid (or its ester-forming derivative), and 80 mol% or more of the diol component is ethylene. Obtained by adding 1 to 20% by weight, preferably 3 to 10% by weight of polyalkylene glycol having a molecular weight of 1000 to 10000, preferably 2000 to 6000, during polymerization of thermoplastic polyester that is glycol (or its ester-forming derivative). It is a so-called copolymerized block polyether ester. Examples of the polyalkylene glycol having a molecular weight of 1,000 to 10,000 include polyethylene glycol, polypropylene glycol, polytetramethylene glycol, copolymers thereof, and methoxypolyethylene glycol. If the molecular weight of these alkylene glycols is less than 1,000, the effect of improving the electrostatic shielding properties of the molded article will be insufficient, and if it is more than 10,000, transparency will decrease, which is not preferable. In addition, modified polyethylene terephthalate (A) includes
Each of its dicarboxylic acid component and diol component
Isophthalic acid, phthalic acid, 2,6-naphthalenedicarboxylic acid, 1,5-naphthalenedicarboxylic acid, bis(p-carboxyphenyl)methane, within a range of 20 mol% or less and does not impair transparency.
Aromatic dicarboxylic acids such as anthracene dicarboxylic acid and 4,4'-diphenyl ether dicarboxylic acid; aliphatic dicarboxylic acids such as adipic acid, sebacic acid, azelaic acid, and dodecanedioic acid;
Other dicarboxylic acid components such as alicyclic dicarboxylic acids such as 3-cyclohexanedicarboxylic acid and 1,4-cyclohexanedicarboxylic acid or their ester-forming derivatives, and propylene glycol, 1,4-butanediol, neopentyl glycol, 1 , 5-pentanediol, 1,6-hexanediol, decamethylene glycol, cyclohexanediol, or other diol components such as ester-forming derivatives thereof can be copolymerized. The copolymerization amount of polyalkylene glycol, which is a modification component of modified polyethylene terephthalate (A), greatly affects the effect of the present invention, and if it is less than 1% by weight, the effect of improving static electricity shielding property is insufficient;
If it is more than that, the transparency of the container will be significantly lowered, which is not preferable. The sulfonic acid metal salt (B) used as the conductivity improving additive in the present invention is represented by the above general formula, and specific examples include the following, among which it is preferable to use sodium alkylbenzenesulfonate.
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
【式】【formula】
(A1) テレフタル酸ジメチル100部、エチレング
リコール70部および分子量4000のポリエチレン
グリコール1.9部を重合缶に入れて、常法に従
つて重合した。得られた変性ポリエチレンテレ
フタレート(PET)(A1)はポリエチレングリ
コール2.0%を含む。
(A2) テレフタル酸ジメチル100部、エチレング
リコール70部および分子量4000のポリエチレン
グリコール9.8部を重合缶に入れて(A1)同様、
常法に従つて重合した。得られた変性PET
(A2)は、ポリエチレングリコール成分を10%
含む。
(A3) テレフタル酸ジメチル100部、エチレング
リコール70部および分子量4000のポリエチレン
グリコール24.6部を重合缶に入れて常法に従つ
て重合した。変性PET(A3)は、ポリエチレン
グリコール成分を25%含む(比較用)。
(A4) テレフタル酸ジメチル100部、エチレング
リコール70部、分子量4000のポリエチレングリ
コール4.9部およびドデシルベンゼンスルホン
酸ナトリウム4.9部を重合缶に入れて常法によ
つて重合した。得られた変性PET(A4)は、ポ
リエチレングリコールおよびドデシルベンゼン
スルホン酸ナトリウムを各々5%含む。
(A5) (A4)の分子量4000のポリエチレングリ
コールを、分子量20000のものに変えた他は
(A4)と同様にして重合した。得られた変性
PET(A5)は、ポリエチレングリコール、ドデ
シルベンゼンスルホン酸ナトリウムを各々5%
含む(比較用)。
実施例1〜9および比較例1〜7
種々の(A)変性PET、(B)ドデシルベンゼンスル
ホン酸ソーダ(DBS)および(C)未変性PETを、
表1に示す割合で混合して280℃に設定した押出
機で混練チツプ化した。得られたチツプから
2.5OZ射出成形機を用いて巾100×長さ150×深さ
15mm、厚み2.0mmのトレーを成形した。成形品の
底面を切り出した試験片の電気特性、透明性を測
定した。結果を表1に示す。
(A 1 ) 100 parts of dimethyl terephthalate, 70 parts of ethylene glycol, and 1.9 parts of polyethylene glycol having a molecular weight of 4000 were placed in a polymerization can, and polymerization was carried out according to a conventional method. The resulting modified polyethylene terephthalate (PET) (A 1 ) contains 2.0% polyethylene glycol. (A 2 ) 100 parts of dimethyl terephthalate, 70 parts of ethylene glycol, and 9.8 parts of polyethylene glycol with a molecular weight of 4000 were placed in a polymerization can (A 1 ).
Polymerization was carried out according to a conventional method. Obtained modified PET
( A2 ) contains 10% polyethylene glycol component
include. (A 3 ) 100 parts of dimethyl terephthalate, 70 parts of ethylene glycol, and 24.6 parts of polyethylene glycol having a molecular weight of 4000 were placed in a polymerization vessel and polymerized according to a conventional method. Modified PET (A 3 ) contains 25% polyethylene glycol component (for comparison). (A 4 ) 100 parts of dimethyl terephthalate, 70 parts of ethylene glycol, 4.9 parts of polyethylene glycol having a molecular weight of 4000, and 4.9 parts of sodium dodecylbenzenesulfonate were placed in a polymerization vessel and polymerized by a conventional method. The obtained modified PET (A 4 ) contains 5% each of polyethylene glycol and sodium dodecylbenzenesulfonate. (A 5 ) Polymerization was carried out in the same manner as in (A 4 ) except that the polyethylene glycol with a molecular weight of 20,000 was used in (A 4 ). the resulting denaturation
PET (A 5 ) contains 5% each of polyethylene glycol and sodium dodecylbenzenesulfonate.
Including (for comparison). Examples 1 to 9 and Comparative Examples 1 to 7 Various (A) modified PET, (B) sodium dodecylbenzenesulfonate (DBS) and (C) unmodified PET,
They were mixed in the proportions shown in Table 1 and kneaded into chips using an extruder set at 280°C. From the chips obtained
Width 100 x length 150 x depth using 2.5OZ injection molding machine
A tray of 15 mm and 2.0 mm thickness was molded. The electrical properties and transparency of a test piece cut out from the bottom of the molded product were measured. The results are shown in Table 1.
【表】
表1から明らかなように、本発明の二成分系組
成物(実施例1〜4)および三成分系組成物(実
施例5〜9)からなる容器は静電気シールド性お
よび透明性が均衡して良好である。
一方、添加剤(B)を欠く場合(比較例1)および
未変性PET単独の場合(比較例7)は静電気シ
ールド性が極めて劣り、添加剤(B)の添加量が10部
以上の場合(比較例2)には透明性の低下が著し
くなる。また三成分系組成物において未変性
PET(C)の配合量が多すぎる場合(比較例3)は
静電気シールド性が低下し、ポリアルキレングリ
コール共重合量が20%以上の変性PET(A3)を用
いる場合(比較例4〜6)は透明性を満足するこ
とができない。
実施例10〜13、比較例8〜11
重合時にドデシルベンゼンスルホン酸ナトリウ
ムを添加した変性PET(A4)および(A5)と未
変性PET(C)のチツプを表2に示す割合でブレン
ドし、直接2.5OZ射出成形機を用いて、巾100×
長さ150×深さ15mm、厚み2.0mmのトレーを成形し
た。成形品の底面を切り出して電気特性、透明性
を測定した。結果を表2に示す。[Table] As is clear from Table 1, the containers made of the two-component compositions (Examples 1 to 4) and the three-component compositions (Examples 5 to 9) of the present invention have good electrostatic shielding properties and transparency. Good balance. On the other hand, when additive (B) is missing (Comparative Example 1) and when unmodified PET is used alone (Comparative Example 7), the static electricity shielding properties are extremely poor, and when the amount of additive (B) added is 10 parts or more ( Comparative Example 2) shows a significant decrease in transparency. Also, unmodified in ternary compositions.
When the blending amount of PET (C) is too large (Comparative Example 3), the static electricity shielding property decreases, and when using modified PET (A 3 ) with a polyalkylene glycol copolymerization amount of 20% or more (Comparative Examples 4 to 6). ) cannot satisfy transparency. Examples 10 to 13, Comparative Examples 8 to 11 Chips of modified PET (A 4 ) and (A 5 ) to which sodium dodecylbenzenesulfonate was added during polymerization and unmodified PET (C) were blended in the proportions shown in Table 2. , directly using 2.5OZ injection molding machine, width 100×
A tray with a length of 150 mm, a depth of 15 mm, and a thickness of 2.0 mm was molded. The bottom of the molded product was cut out and its electrical properties and transparency were measured. The results are shown in Table 2.
【表】【table】
【表】
表2から明らかなように本発明の容器(実施例
10〜13)は静電気シールド性および透明性を均衡
に満足する。
一方変性PET(A4)に対する未変性PETの配
合量が多すぎる場合(比較例8)は静電気シール
ド性が低下し、分子量が20000と大きすぎるポリ
エチレングリコールで変性した変性PET(A5)を
用いる場合(比較例9〜11)は透明性を満足しな
い。
実施例 14
実施例3で示したと同じ処方で変性PET(A1)
100部とDBS10部をタンブラーで混合し、30φ押
出機に異形ダイスを取り付けて直接押出成形によ
り5×6mm、肉厚0.5mmの角状チユーブを成形し
た。このチユーブを150mm長さに切断して、これ
にMOS型ICチツプを100個詰め、外から見たとこ
ろ、1個づつ入れてある様子がよく確認すること
ができた。この状態で振幅3cm、周期2回/sec
の上下振動を3hr与えたのち、ICチツプを取り出
して不良率を確認したところ1個も破損は認めら
れなかつた。
実施例 15
実施例9で得られたトレー成形品に、MOS型
ICチツプを使用したLSIを50個詰めて振幅1cm、
周期10回/secの水平振動を1hr与えたのち、LSI
の不良率を確認したところ、1個も破損は認めら
れなかつた。
実施例 16
実施例12と同じ処方で変性PET(A4)100部と
ポリエチレンテレフタレート樹脂250部をタンブ
ラーで混合し、2.0OZ射出成形機で直接成形によ
り5×6mm、肉厚0.5mm、長さ150mmの角型チユー
ブ状成形品を得た。実施例14と同様、MOS型IC
チツプを100個詰めて外より観察した結果、透明
性に優れ内部の1個1個がはつきり確認できた。
実施例14と同じ処理を行ないICチツプの不良率
を確認したが、すべて正常であつた。[Table] As is clear from Table 2, the container of the present invention (Example
10 to 13) satisfies electrostatic shielding properties and transparency in a balanced manner. On the other hand, when the blending amount of unmodified PET to modified PET (A 4 ) is too large (Comparative Example 8), the static electricity shielding property decreases, and modified PET (A 5 ) modified with polyethylene glycol whose molecular weight is too large (20,000) is used. In the cases (Comparative Examples 9 to 11), the transparency was not satisfied. Example 14 Modified PET (A 1 ) with the same formulation as shown in Example 3
100 parts of DBS and 10 parts of DBS were mixed in a tumbler, and a 30φ extruder was equipped with a modified die to form a square tube of 5×6 mm and 0.5 mm in wall thickness by direct extrusion molding. This tube was cut to a length of 150 mm and filled with 100 MOS type IC chips, and when viewed from the outside it was clearly visible that each chip had been inserted one by one. In this state, the amplitude is 3cm, the period is 2 times/sec
After applying vertical vibration for 3 hours, the IC chips were taken out and the failure rate was checked, and not a single chip was found to be damaged. Example 15 A MOS mold was added to the tray molded product obtained in Example 9.
Packed with 50 LSIs using IC chips, the amplitude is 1cm.
After applying horizontal vibration with a period of 10 times/sec for 1 hour, the LSI
When we checked the defective rate, not a single piece was found to be damaged. Example 16 Using the same recipe as Example 12, 100 parts of modified PET (A 4 ) and 250 parts of polyethylene terephthalate resin were mixed in a tumbler, and molded directly with a 2.0OZ injection molding machine to form a product of 5 x 6 mm, wall thickness of 0.5 mm, and length. A 150 mm square tube-shaped molded product was obtained. Similar to Example 14, MOS type IC
When we packed 100 chips and observed them from the outside, we found that they were so transparent that we could see each one inside.
The same process as in Example 14 was carried out to check the defective rate of the IC chips, and all were found to be normal.
Claims (1)
1000〜10000のポリアルキレングリコールを1〜
20重量%共重合せしめた変性ポリエチレンテレフ
タレート100重量部に対し、(B)一般式Ar−SO3
1/mMe(ただし式中のArは置換基を有するかまた は有さない芳香族残基、mは1〜3の整数、Me
は金属原子を示す)で表わされるスルホン酸金属
塩の少なくとも1種0.01〜10重量部および(C)ポリ
エチレンテレフタレート0〜500重量部を配合し
た組成物を成形してなるICチツプ用収納容器。[Claims] 1. (A) Polyethylene terephthalate has a molecular weight of
1 to 1000 to 10000 polyalkylene glycol
For 100 parts by weight of modified polyethylene terephthalate copolymerized with 20% by weight, (B) general formula Ar-SO 3
1/mMe (wherein Ar is an aromatic residue with or without a substituent, m is an integer of 1 to 3, Me
1. An IC chip storage container formed by molding a composition containing 0.01 to 10 parts by weight of at least one sulfonic acid metal salt represented by (represents a metal atom) and 0 to 500 parts by weight of polyethylene terephthalate (C).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56144602A JPS5846655A (en) | 1981-09-16 | 1981-09-16 | Receiving vessel for integrated circuit chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56144602A JPS5846655A (en) | 1981-09-16 | 1981-09-16 | Receiving vessel for integrated circuit chip |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5846655A JPS5846655A (en) | 1983-03-18 |
JPH0261152B2 true JPH0261152B2 (en) | 1990-12-19 |
Family
ID=15365846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56144602A Granted JPS5846655A (en) | 1981-09-16 | 1981-09-16 | Receiving vessel for integrated circuit chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5846655A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4704075A (en) * | 1986-01-24 | 1987-11-03 | Johnston Andrew E | Turbocharger water-cooled bearing housing |
US4893995A (en) * | 1988-12-05 | 1990-01-16 | General Motors Corporation | Electric motor-driven impeller-type air pump |
CN1112725C (en) * | 1994-07-08 | 2003-06-25 | 信越半导体株式会社 | Storage container for semiconductor crystal |
-
1981
- 1981-09-16 JP JP56144602A patent/JPS5846655A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5846655A (en) | 1983-03-18 |
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