JPH0257361B2 - - Google Patents
Info
- Publication number
- JPH0257361B2 JPH0257361B2 JP61142540A JP14254086A JPH0257361B2 JP H0257361 B2 JPH0257361 B2 JP H0257361B2 JP 61142540 A JP61142540 A JP 61142540A JP 14254086 A JP14254086 A JP 14254086A JP H0257361 B2 JPH0257361 B2 JP H0257361B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- metal rod
- tapered
- base member
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000003780 insertion Methods 0.000 claims description 33
- 230000037431 insertion Effects 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Description
【発明の詳細な説明】
〔概要〕
本発明は金属棒の導波管内への挿入長により調
整を行なうマイクロ波可変リアクタンス素子にお
いて、
導電性の介挿部材が金属棒及び導波管になじま
せられ、金属棒及び導波管に隙間無く密着するよ
うにして、
放電が発生しないようにしたものである。[Detailed Description of the Invention] [Summary] The present invention relates to a microwave variable reactance element that is adjusted by the length of insertion of a metal rod into a waveguide. It is made to fit closely to the metal rod and waveguide without any gaps to prevent electrical discharge from occurring.
本発明はマイクロ波リアクタンス素子に係り、
特にマイクロ波立体回路に適用されるマイクロ波
リアクタンス素子に関する。
The present invention relates to a microwave reactance element,
In particular, the present invention relates to microwave reactance elements applied to microwave three-dimensional circuits.
例えば半導体装置の製造プロセスにおいて、プ
ラズマ処理によりプロセスのドライ化及び低温
化、或いはパターンの微細化などの効果を得てい
るが、多量の活性種を生成して処理量を増大する
に際して、高電力を印加することができるマイク
ロ波による励起が行われている。 For example, in the manufacturing process of semiconductor devices, plasma processing has the effect of making the process dryer and cooler, or making the pattern finer. However, in order to generate a large amount of active species and increase the throughput, high power Excitation is performed using microwaves that can apply .
この様なマイクロ波電力応用装置においても次
第に大出力が要望されており、これに使用するマ
イクロ波回路素子についても取り扱う電力に対し
て十分に耐え、安定して動作することが当然に要
求される。 Increasingly, high output power is required in such microwave power application devices, and it is a matter of course that the microwave circuit elements used in these devices must be able to sufficiently withstand the power being handled and operate stably. .
マイクロ波電力応用の一例として、マイクロ波
プラズマ処理装置の模式図を第４図に示す。
As an example of microwave power application, a schematic diagram of a microwave plasma processing apparatus is shown in FIG.
マイクロ波電源１において通常マグネトロンに
よつて発振された周波数2.45GHzのマイクロ波
は、導波管によりアイソレータ２へ導かれる。ア
イソレータ２はその内蔵するフエライトにより入
射波はほぼ完全に通すが、不整合で戻つて来た反
射波は90度偏向して凝似負荷に吸収させる。この
ようにして導かれたマイクロ波は方向性結合器３
で入射後、反射波の電力がモニターされる。 Microwaves with a frequency of 2.45 GHz, which are normally oscillated by a magnetron in the microwave power source 1, are guided to the isolator 2 by a waveguide. The isolator 2 allows almost completely the incident wave to pass through due to its built-in ferrite, but the reflected wave that returns due to mismatch is deflected by 90 degrees and absorbed by the condensed load. The microwaves guided in this way are transferred to the directional coupler 3.
After the incident, the power of the reflected wave is monitored.
プラズマ生成室７として石英管がTE01モード
導波管５の電界方向に挿入されており、このプラ
ズマ生成室７内に、例えば４弗化炭素（CF4）と
酸素（O2）との混合ガスを圧力0.1〜10Torr程度
に導入し、このマイクロ波電力によりプラズマを
励起する。この際に、３本柱整合器４と短絡プラ
ンジヤ整合器６とによりマイクロ波の整合を行
う。 A quartz tube is inserted as a plasma generation chamber 7 in the electric field direction of the TE 01 mode waveguide 5, and a mixture of carbon tetrafluoride (CF 4 ) and oxygen (O 2 ), for example, is contained in the plasma generation chamber 7. Gas is introduced at a pressure of about 0.1 to 10 Torr, and the plasma is excited by the microwave power. At this time, microwave matching is performed using the three-pillar matching device 4 and the short-circuit plunger matching device 6.
この様に生成されたプラズマにより発生した活
性粒子がプラズマ処理室８に導かれ、例えば半導
体基板１０のエツチング処理等が行われる。なお
プラズマ生成室７は冷却器９により水冷されてい
る。 Active particles generated by the plasma thus generated are led to the plasma processing chamber 8, where, for example, etching processing of the semiconductor substrate 10 is performed. Note that the plasma generation chamber 7 is water-cooled by a cooler 9.
前記例の如くマイクロ波電力応用装置では電子
レンジなど一部の簡易な装置を除いて、マイクロ
波が負荷よりの反射成分が最小となる状態で負荷
に供給されるようにするために、即ち、電源から
負荷に最大電力が供給されるようにするために、
マイクロ波電源１と負荷との間に、上記の整合器
４，６が設けてある。 As mentioned above, in microwave power application devices, except for some simple devices such as microwave ovens, in order to ensure that microwaves are supplied to the load in a state where the reflected components from the load are minimized, that is, To ensure maximum power is delivered from the source to the load,
The matching boxes 4 and 6 described above are provided between the microwave power source 1 and the load.
整合器４は、後述する本発明になるマイクロ波
可変リアクタンス素子２０Ａ，２０Ｂ，２０Ｃが
並んだ構成である。マイクロ波可変リアクタンス
素子は、基本的には、スタブと呼称される金属棒
が導波管の広い面から導波管内に電界に平行に挿
入され、挿入長を可変する構成である。金属棒の
挿入長に応じてリアクタンスが容量性から直列共
振を経て誘導性に変化し、整合が行なわれる。 The matching box 4 has a configuration in which microwave variable reactance elements 20A, 20B, and 20C according to the present invention, which will be described later, are lined up. A microwave variable reactance element basically has a configuration in which a metal rod called a stub is inserted into the waveguide from the wide surface of the waveguide in parallel to the electric field, and the insertion length is varied. Depending on the insertion length of the metal rod, the reactance changes from capacitive to inductive through series resonance, and matching is performed.
従来のマイクロ波可変リアクタンス素子は、第
５図に示すように、金属棒１１のねじ部１２を導
波管１３自体のねじ部１４に螺合させて、金属棒
１１がその先端部を導波管１３内に挿入させて設
けられた構成である。金属棒１１の導波管１３内
への挿入長ａはねじ構造で可変される。 As shown in FIG. 5, the conventional microwave variable reactance element has a threaded part 12 of a metal rod 11 screwed into a threaded part 14 of a waveguide 13 itself, so that the metal rod 11 has its tip end as a waveguide. It is configured to be inserted into the tube 13. The insertion length a of the metal rod 11 into the waveguide 13 can be varied by the screw structure.
金属棒１１のうち導波管１３内への突出部分の
基部は、ねじ部１２と１４との螺合部を介して導
波管１３と電気的に導通している。ねじ部１２と
１４とは完全に密着しているわけではなく、第６
図に示すように、微小な隙間１５が構造上できて
しまう。なお、導波管１３は接地されている。 The base of the protruding portion of the metal rod 11 into the waveguide 13 is electrically connected to the waveguide 13 via the threaded portion between the threaded portions 12 and 14 . The threaded portions 12 and 14 are not completely in contact with each other, and the threaded portions 12 and 14 are
As shown in the figure, a small gap 15 is created due to the structure. Note that the waveguide 13 is grounded.
金属棒１１にはマイクロ波の作用で電荷が発生
されるも、これは螺合部を通して導波管１３に逃
がされ、金属棒１１と導波管１３とは同電位に保
たれる。
Although electric charges are generated in the metal rod 11 by the action of microwaves, this is released into the waveguide 13 through the threaded portion, and the metal rod 11 and the waveguide 13 are kept at the same potential.
近年、マイクロ波電源の高出力化の傾向があ
る。マイクロ波電源の出力が500W以下の低出力
の場合には、特に問題はなかつたが、マイクロ波
電源として1kw以上の高出力のものを使用する
と、金属棒１１と導波管１３との間に、上記隙間
１５部分に放電を起こすに足りる電位差が生じ、
隙間１５部分で放電が発生してしまう。 In recent years, there has been a trend toward higher output microwave power sources. There was no particular problem when the microwave power source had a low output of 500 W or less, but when a high output microwave power source of 1 kW or more was used, a problem occurred between the metal rod 11 and the waveguide 13. , a potential difference sufficient to cause a discharge occurs in the gap 15,
Discharge occurs in the gap 15.
放電が発生すると、高温となり焼き付いて、金
属棒１１の回転動作が制限されるため、挿入長を
可変することができず調整が出来なくなつてしま
うという問題点があつた。また第４図のマイクロ
波プラズマ処理装置においては、放電により整合
がずれ、出力が安定しないため、エツチングが不
安定となると共に、マグネトロンの負荷が変動
し、マグネトロンの寿命を不要に短縮させてしま
うという問題点があつた。 When electrical discharge occurs, the metal rod 11 becomes hot and seizes, restricting the rotational movement of the metal rod 11. This poses a problem in that the insertion length cannot be varied and cannot be adjusted. Furthermore, in the microwave plasma processing apparatus shown in Figure 4, the matching shifts due to discharge and the output becomes unstable, making etching unstable and the load on the magnetron fluctuating, which unnecessarily shortens the life of the magnetron. There was a problem.
本発明は、金属棒の導波管内への挿入長を調整
可能としてなるマイクロ波可変リアクタンス素子
において、
上記導波管に固定してあり、上記金属棒が挿通
されるテーパ孔を有する金属製ベース部材と、
上記テーパ孔に対応するテーパ形状を有し且つ
上記金属棒が挿通する孔を有し、該金属棒を囲繞
して上記テーパ孔内に嵌合した、上記金属棒及び
ベース部材より軟質の導電性のテーパ状介挿部材
と、
上記ベース部材に螺合しており、上記挿入長の
調整後に締め付けることにより上記介挿部材を上
記テーパ孔内に押し込むねじ部材とよりなり、
上記テーパ状介挿部材が、上記金属棒の周面及
び上記ベース部材の上記テーパ孔の内面になじん
でこれらの面と密着する構成としたものである。
The present invention provides a microwave variable reactance element capable of adjusting the length of insertion of a metal rod into a waveguide, the metal base being fixed to the waveguide and having a tapered hole through which the metal rod is inserted. a member having a tapered shape corresponding to the tapered hole and having a hole through which the metal rod is inserted, which is softer than the metal rod and the base member, surrounding the metal rod and fitting into the tapered hole; a conductive tapered insertion member; and a screw member that is screwed into the base member and pushes the insertion member into the tapered hole by tightening after adjusting the insertion length, and the tapered The insertion member is configured to fit into the peripheral surface of the metal rod and the inner surface of the tapered hole of the base member and come into close contact with these surfaces.
介挿部材の金属棒とベース部材との密着は、こ
の部分に隙間のない面接触を形成し、放電の発生
を確実に防止する。
The close contact between the metal rod of the insertion member and the base member forms a surface contact with no gap in this part, and reliably prevents the occurrence of electric discharge.
第１図は本発明の一実施例になるマイクロ波可
変リアクタンス素子２０を示す断面図、第２図は
第１図中本発明の要部の分解斜視図である。
FIG. 1 is a sectional view showing a microwave variable reactance element 20 according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of the essential parts of the present invention in FIG.
各図中、２１はステンレス、黄銅等よりなる金
属棒であり、円柱形状の棒本体２１ａと、頭部２
１ｂとよりなる。この金属棒２１のねじ部２１ｃ
は、金属製導波管５に固定されたフレーム２２の
ねじ部２２ａと螺合している。このねじ部２１ｃ
と２２ａとよりなるねじ構造により、棒本体２１
ａの導波管５内への挿入長ｌが調整される。導波
管５は接地されている。 In each figure, 21 is a metal rod made of stainless steel, brass, etc., which includes a cylindrical rod body 21a and a head 2.
1b and more. Threaded portion 21c of this metal rod 21
is screwed into a threaded portion 22a of the frame 22 fixed to the metal waveguide 5. This threaded part 21c
and 22a, the rod body 21
The insertion length l of a into the waveguide 5 is adjusted. Waveguide 5 is grounded.
２３は有底円筒形状のステンレス、黄銅等より
なるベース部材であり、底部２３ａと筒部２３ｂ
とよりなる。底部２３ａには下方が細径とされた
テーパ孔２３ｃが形成してあり、筒部２３ｂの内
周面にはねじ部２３ｄが形成してある。このベー
ス部材２３は、底部２３ａを導波管５の開口５ａ
に密嵌されて溶着してあり、底部２３ａの下面２
３ｅは導波管５の内面５ｂに対して段差なく位置
している。 23 is a base member made of stainless steel, brass, etc. in a cylindrical shape with a bottom, and includes a bottom part 23a and a cylindrical part 23b.
It becomes more. A tapered hole 23c having a smaller diameter at the bottom is formed in the bottom portion 23a, and a threaded portion 23d is formed in the inner peripheral surface of the cylindrical portion 23b. This base member 23 has a bottom portion 23a connected to the opening 5a of the waveguide 5.
It is tightly fitted and welded to the lower surface 2 of the bottom part 23a.
3e is positioned with no difference in level with respect to the inner surface 5b of the waveguide 5.
２４はねじ部材であり、上記ねじ部２３ｄに螺
合している。 24 is a screw member, which is screwed into the threaded portion 23d.
上記棒本体２１ａは、例えばステンレスからな
るねじ部材２４の孔２４ａ及びベース部材２３の
テーパ孔２３ｃを挿通している。 The rod body 21a is inserted through a hole 24a of a screw member 24 made of stainless steel and a tapered hole 23c of the base member 23, for example.
２５はテーパ状介挿部材であり、金属棒２１及
びベース部材２３より軟質のアルミニウム製であ
る。この介挿部材２５は、上記テーパ孔２３ｃに
対応するテーパ形状を有し、テーパ孔２３ｃ内に
嵌合している。棒本体２１ａは、介挿部材２５の
孔２５ａ内を挿通しており、介挿部材２５は棒本
体２１ａを囲繞している。尚、この介挿部材２５
にはアルミニウムの他のベリウム銅（Be−Cu）
等を用いることができる。 A tapered insertion member 25 is made of aluminum, which is softer than the metal rod 21 and the base member 23. This insertion member 25 has a tapered shape corresponding to the tapered hole 23c, and is fitted into the tapered hole 23c. The rod body 21a is inserted through a hole 25a of the insertion member 25, and the insertion member 25 surrounds the rod body 21a. In addition, this insertion member 25
Other than aluminum, beryum copper (Be-Cu)
etc. can be used.
２６は例えば、ステンレスからなるリング形状
のスペーサである。 26 is a ring-shaped spacer made of stainless steel, for example.
前記挿入長ｌの調整は、ねじ部材２４をゆるめ
た状態で金属棒２１を回転させて行なう。調整後
にねじ部材２４を強く締め付ける。 The insertion length l is adjusted by rotating the metal rod 21 with the screw member 24 loosened. After adjustment, tighten the screw member 24 strongly.
この操作により、介挿部材２５はねじ部材２４
によりスペーサ２６を介してテーパ孔２３ｃ内に
押し込まれ、棒本体２１ａをクランプする。ここ
でスペーサ２６はアルミニウム製であるため、変
形し、外周のテーパ面２５ｂはベース部材２３の
テーパ孔２３ｃの内面になじみ、孔２５ａは縮径
されその内面２５ｃは棒本体２１ａの周面になじ
む。 By this operation, the insertion member 25 is inserted into the threaded member 24.
The rod is pushed into the tapered hole 23c via the spacer 26 and clamps the rod body 21a. Here, since the spacer 26 is made of aluminum, it is deformed, and the tapered surface 25b on the outer periphery adapts to the inner surface of the tapered hole 23c of the base member 23, and the diameter of the hole 25a is reduced and its inner surface 25c adapts to the circumferential surface of the rod body 21a. .
これにより、第３図に拡大して示すように、棒
本体２１ａの周面２１ｄと孔２５ａの内面２５ｃ
とが全面に亘つて僅かの隙間も無く密着し、且つ
テーパ面２５ｂとテーパ孔２３ｃの内面２３ｆと
が全面に亘つて僅かの隙間も無く密着した状態と
なる。即ち棒本体２１ａ、介挿部材２５、及びベ
ース部材２３は、放電が起こりうる隙間を全く有
しない状態で密着した状態にある。 As a result, as shown enlarged in FIG. 3, the peripheral surface 21d of the rod body 21a and the inner surface 25c of the hole 25a
The tapered surface 25b and the inner surface 23f of the tapered hole 23c are in close contact with each other over the entire surface without the slightest gap. In other words, the rod body 21a, the insertion member 25, and the base member 23 are in close contact with each other without any gap where electric discharge may occur.
このため、第４図中、マイクロ波電源１として
高出力のものを使用した場合にも、棒本体２１ａ
と介挿部材２５との間、及び介挿部材２５とベー
ス部材２３との間で放電は発生せず、棒本体２１
ａ、介挿部材２５、ベース部材２３とは非焼き付
き状態を維持し、その後の挿入長ｌの再調整は支
障なく行なわれる。 For this reason, even when a high-output microwave power source 1 is used as the microwave power source 1 in FIG. 4, the rod body 21a
No discharge occurs between the insertion member 25 and the insertion member 25 and the base member 23, and the rod body 21
a, the insertion member 25 and the base member 23 are maintained in a non-seizing state, and subsequent readjustment of the insertion length l is performed without any problem.
また、介挿部材２５の下部２５ｄは、ベース部
材２３の下部２３ｅより寸法ｍ突出しており、棒
本体２１ａを覆つている。この下部２５ｄは、棒
本体２１ａとベース部材２３の底部２３ａとの間
での放電の発生を制限する。 Further, the lower part 25d of the insertion member 25 projects by a dimension m from the lower part 23e of the base member 23, and covers the rod main body 21a. This lower portion 25d limits the generation of electrical discharge between the rod body 21a and the bottom portion 23a of the base member 23.
また第１図中、棒本体２１ａのうち導波管５内
に突出した部分にマイクロ波により電荷が発生す
るが、この発生した電荷は、上記の面接触してい
る部分を通して導通管５に逃がされており、介挿
部材２５より上方の部分は導波管５と同電位とな
る。従つて、棒本体２１ａとねじ部材２４の孔２
４ａの内面との間及びねじ部２１ｃと２２ａとの
間には隙間があるも、この隙間の個所で放電が起
こることはない。 Furthermore, in FIG. 1, electric charges are generated by microwaves in the portion of the rod body 21a that protrudes into the waveguide 5, but this generated electric charge escapes into the conducting tube 5 through the above-mentioned surface contact portion. The portion above the insertion member 25 has the same potential as the waveguide 5. Therefore, the hole 2 of the rod body 21a and the screw member 24
Although there is a gap between the inner surface of the screw 4a and the threaded portions 21c and 22a, no discharge occurs at the gap.
また、放電が起こらないため、放電に起因する
整合のずれが起こらず、エツチングプロセスが安
定に行なわれる。また整合のずれが起こらないた
め、マイクロ波電源１を構成するマグネトロンの
負荷変動もなく、マグネトロンの寿命が不要に短
縮されることがない。これによりマグネトロンの
長寿命化が期待出来、マイクロ波プラズマ処理装
置は従来に比べて維持比が安価となる。 Further, since no discharge occurs, misalignment due to discharge does not occur, and the etching process is performed stably. Furthermore, since no misalignment occurs, there is no load fluctuation on the magnetron constituting the microwave power source 1, and the life of the magnetron is not unnecessarily shortened. As a result, the life of the magnetron can be expected to be extended, and the maintenance ratio of the microwave plasma processing equipment will be lower than that of conventional equipment.
また、第４図中、他のマイクロ波可変リアクタ
ンス素子２０Ｂ，２０Ｃも上記マイクロ波可変リ
アクタンス素子２０Ａと同じ構成であり、その説
明は省略する。 Further, in FIG. 4, the other microwave variable reactance elements 20B and 20C have the same configuration as the microwave variable reactance element 20A, and the explanation thereof will be omitted.
本発明によれば、マイクロ波電源として高出力
のものを使用した場合にも、放電が発生せず、然
して挿入長の調整を支障なく行なうことが出来、
また放電が発生しないことにより、本発明のマイ
クロ波可変リアクタンス素子を適用した処理装置
の目的とするプロセスの安定化を図り得且つマイ
クロ波電源の長寿命化を図り得る。
According to the present invention, even when a high-output microwave power source is used, no discharge occurs, and the insertion length can be adjusted without any problem.
Further, since no discharge occurs, it is possible to stabilize the process aimed at by the processing apparatus to which the microwave variable reactance element of the present invention is applied, and to extend the life of the microwave power source.
第１図は本発明の一実施例になるマイクロ波可
変リアクタンス素子の断面図、第２図は第１図中
本発明の要部の分解斜視図、第３図は第１図中棒
本体、介挿部材、ベース部材の密着状態を拡大し
て示す図、第４図は第１図のマイクロ波可変リア
クタンス素子を適用してなるマイクロ波プラズマ
処理装置の模式図、第５図はマイクロ波可変リア
クタンス素子の従来例を示す図、第６図は第５図
中放電の起こりうる螺合部を拡大して示す図であ
る。
図中、５は導波管、２０Ａはマイクロ波可変リ
アクタンス素子、２１は金属棒、２１ａは棒本
体、２１ｃ，２２ｃ，２３ｄはねじ部、２２はフ
レーム、２３はベース部材、２３ｃはテーパ孔、
２３ｆは内面、２４はねじ部材、２５はテーパ状
介挿部材、２５ａは孔、２５ｂはテーパ面、２５
ｃは内面である。
FIG. 1 is a sectional view of a microwave variable reactance element according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of the main parts of the present invention in FIG. 1, and FIG. 3 is a rod main body in FIG. FIG. 4 is a schematic diagram of a microwave plasma processing apparatus to which the microwave variable reactance element of FIG. 1 is applied, and FIG. FIG. 6 is a diagram showing a conventional example of a reactance element, and is an enlarged view of the threaded portion in FIG. 5 where discharge can occur. In the figure, 5 is a waveguide, 20A is a microwave variable reactance element, 21 is a metal rod, 21a is a rod body, 21c, 22c, 23d are threaded parts, 22 is a frame, 23 is a base member, 23c is a tapered hole,
23f is an inner surface, 24 is a screw member, 25 is a tapered insertion member, 25a is a hole, 25b is a tapered surface, 25
c is the inner surface.
Claims (1)
ｌを調整可能としてなるマイクロ波可変リアクタ
ンス素子において、 上記導波管５に固定してあり、上記金属棒２１
ａが挿通されるテーパ孔２３ｃを有する金属製ベ
ース部材２３と、 上記テーパ孔２３ｃに対応するテーパ形状を有
し且つ上記金属棒２１ａが挿通する孔２５ａを有
し、該金属棒２１ａを囲繞して上記テーパ孔２３
ｃ内に嵌合した、上記金属棒２１ａ及びベース部
材２３より軟質の導電性のテーパ状介挿部材２５
と、 上記ベース部材２３に螺合しており、上記挿入
長ｌの調整後に締め付けることにより上記介挿部
材２５を上記テーパ孔２３ｃ内に押し込むねじ部
材２４とよりなり、 上記テーパ状介挿部材２５が、上記金属棒２１
ａの周面２１ｄ及び上記ベース部材２３の上記テ
ーパ孔２３ｃの内面２３ｆになじんでこれらの面
２１ｄ，２３ｆと密着することを特徴とするマイ
クロ波可変リアクタンス素子。[Scope of Claims] 1. A microwave variable reactance element capable of adjusting the insertion length l of the metal rods 21, 21a into the waveguide 5, which is fixed to the waveguide 5 and includes the metal rods 21 and 21a.
a metal base member 23 having a tapered hole 23c through which the metal rod 21a is inserted; a hole 25a having a tapered shape corresponding to the taper hole 23c and through which the metal rod 21a is inserted; The taper hole 23
an electrically conductive tapered insertion member 25 that is softer than the metal rod 21a and the base member 23 and fitted into the inside c.
and a screw member 24 which is screwed onto the base member 23 and which, when tightened after adjusting the insertion length l, pushes the insertion member 25 into the tapered hole 23c, and the tapered insertion member 25 However, the metal rod 21
A microwave variable reactance element characterized in that it conforms to the peripheral surface 21d of the base member 23a and the inner surface 23f of the tapered hole 23c of the base member 23 and comes into close contact with these surfaces 21d and 23f.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61142540A JPS62299101A (en) | 1986-06-18 | 1986-06-18 | Microwave variable reactance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61142540A JPS62299101A (en) | 1986-06-18 | 1986-06-18 | Microwave variable reactance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62299101A JPS62299101A (en) | 1987-12-26 |
| JPH0257361B2 true JPH0257361B2 (en) | 1990-12-04 |
Family
ID=15317727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61142540A Granted JPS62299101A (en) | 1986-06-18 | 1986-06-18 | Microwave variable reactance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62299101A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013098054A (en) * | 2011-11-01 | 2013-05-20 | Ulvac Japan Ltd | Microwave introduction device |
-
1986
- 1986-06-18 JP JP61142540A patent/JPS62299101A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62299101A (en) | 1987-12-26 |
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