JPH025716B2 - - Google Patents

Info

Publication number
JPH025716B2
JPH025716B2 JP7603883A JP7603883A JPH025716B2 JP H025716 B2 JPH025716 B2 JP H025716B2 JP 7603883 A JP7603883 A JP 7603883A JP 7603883 A JP7603883 A JP 7603883A JP H025716 B2 JPH025716 B2 JP H025716B2
Authority
JP
Japan
Prior art keywords
metal
semiconductor material
matrix
thin film
host
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7603883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5918190A (ja
Inventor
Richaado Ansonii Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/372,857 external-priority patent/US4377423A/en
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5918190A publication Critical patent/JPS5918190A/ja
Publication of JPH025716B2 publication Critical patent/JPH025716B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7603883A 1982-04-28 1983-04-28 再結晶した単結晶半導体材料領域の形成方法 Granted JPS5918190A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/372,857 US4377423A (en) 1980-12-29 1982-04-28 Liquid metal inclusion migration by means of an electrical potential gradient
US372857 1982-04-28

Publications (2)

Publication Number Publication Date
JPS5918190A JPS5918190A (ja) 1984-01-30
JPH025716B2 true JPH025716B2 (me) 1990-02-05

Family

ID=23469903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7603883A Granted JPS5918190A (ja) 1982-04-28 1983-04-28 再結晶した単結晶半導体材料領域の形成方法

Country Status (1)

Country Link
JP (1) JPS5918190A (me)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371310U (me) * 1989-11-17 1991-07-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371310U (me) * 1989-11-17 1991-07-18

Also Published As

Publication number Publication date
JPS5918190A (ja) 1984-01-30

Similar Documents

Publication Publication Date Title
Schultz et al. Effects of heavy deformation and annealing on the electrical properties of Bi2Te3
US4011582A (en) Deep power diode
US4063965A (en) Making deep power diodes
US2765245A (en) Method of making p-n junction semiconductor units
US3765956A (en) Solid-state device
US3047439A (en) Silicon carbide semiconductor device
PEANN et al. LVI. Some Aspects of Peltier Heating at Liquid—Solid Interfaces in Germanium
US5021224A (en) Apparatus for growing multicomponents compound semiconductor crystals
US2821493A (en) Fused junction transistors with regrown base regions
US4377423A (en) Liquid metal inclusion migration by means of an electrical potential gradient
US2802759A (en) Method for producing evaporation fused junction semiconductor devices
Brown et al. Growth of Bismuth‐Antimony Single‐Crystal Alloys
JPS6011292A (ja) 多成分物質層の形成方法
US3351502A (en) Method of producing interface-alloy epitaxial heterojunctions
US2854612A (en) Silicon power rectifier
Hurle et al. Thin alloy zone crystallisation
US3378409A (en) Production of crystalline material
US4184897A (en) Droplet migration doping using carrier droplets
US3086857A (en) Method of controlling liquid-solid interfaces by peltier heat
US3041508A (en) Tunnel diode and method of its manufacture
Paola Metallic contacts for gallium arsenide
US3956023A (en) Process for making a deep power diode by thermal migration of dopant
Seidensticker Kinetic effects in temperature gradient zone melting
JPH025716B2 (me)
GB2033778A (en) Temperature gradient zone melting