JPH0255415A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0255415A
JPH0255415A JP20698588A JP20698588A JPH0255415A JP H0255415 A JPH0255415 A JP H0255415A JP 20698588 A JP20698588 A JP 20698588A JP 20698588 A JP20698588 A JP 20698588A JP H0255415 A JPH0255415 A JP H0255415A
Authority
JP
Japan
Prior art keywords
film
silicon
nitride film
nearly
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20698588A
Other languages
Japanese (ja)
Inventor
Masahiro Yamada
正弘 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20698588A priority Critical patent/JPH0255415A/en
Publication of JPH0255415A publication Critical patent/JPH0255415A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Filters That Use Time-Delay Elements (AREA)

Abstract

PURPOSE:To manufacture a product with a high capacity and a high dielectric strength by using a silicon thermo nitride film and a silicon nitride film as insulation films. CONSTITUTION:A polycrystal silicon film 102 is formed on a silicon substrate 101 in thickness of 4500Angstrom , heat treatment is applied to the film at 900 deg.C under nitrogen and POCl3 atmosphere to decrease the sheet resistance to nearly 25OMEGA. Then a silicon oxide film 103 in a thickness of 500Angstrom on the silicon film 102 at 1000 deg.C under dry oxygen atmosphere, heat treatment is applied at 1100 deg.C under nitrogen ammonium atmosphere for nearly 2 hours, part of the silicon oxide film 103 is subject to thermo nitrogen processing to form a silicon nitride film 104. Then a silicon nitride film 105 is deposited and grown by nearly 500Angstrom by the CVD method. Then the 2nd polycrystal silicon film 106 is formed and annealed under argon gas atmosphere including hydrogen at 400-1000 deg.C. Thus, the element with high capacity and excellent dielectric strength is manufactured.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、MO3型集積回路(MO3工C)に於げるS
 OF (5w1tched  CapacitorF
ilter  )の横置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the S
OF (5w1tched CapacitorF
regarding the horizontal placement of (ilter).

[従来の技術] 第2図に示すように、従来MOS工0でSOFを形成す
る場合、シリコン基板201上に、第1多結晶シリコン
層202を形成し、この抵抗を下げる目的で、リン、ヒ
素などのN型不純物を、熱拡散もしくは、イオン注入に
よりドープする。次にこの第1多結晶シリコン膜202
を、800〜1100℃のドライ酸素雰囲気もしくは、
水分もしくは水素を含んだ酸素雰囲気で熱「p化しシリ
コン酸化膜205を形成する。次に第1多結晶シリコン
と同様な方法で、N型不純物を含む第2多結晶シリコン
膜204を形成し、先の第1多結晶シリコン202が電
極となり、絶縁体としてシリコン酸化膜206からなる
コンデンサーとなる。ここで、このコンデンサーに求め
られる条件は次のようなものがある。
[Prior Art] As shown in FIG. 2, when forming an SOF using a conventional MOS process, a first polycrystalline silicon layer 202 is formed on a silicon substrate 201, and in order to lower this resistance, phosphorus, An N-type impurity such as arsenic is doped by thermal diffusion or ion implantation. Next, this first polycrystalline silicon film 202
in a dry oxygen atmosphere at 800 to 1100°C or
A silicon oxide film 205 is formed by thermal p conversion in an oxygen atmosphere containing moisture or hydrogen.Next, a second polycrystalline silicon film 204 containing N-type impurities is formed in the same manner as the first polycrystalline silicon film. The first polycrystalline silicon 202 serves as an electrode, and a capacitor is formed of the silicon oxide film 206 as an insulator.The following conditions are required for this capacitor.

(1)  単位面積当りの容量を極力太き(したい。つ
まり、シリコン酸化膜20ろは、薄い方がよい。
(1) We want to make the capacitance per unit area as large as possible. In other words, the thinner the silicon oxide film, the better.

(2)  コンデンサーとしての絶縁耐圧を大きくした
い。これはシリコン酸化膜203は、厚い方がよい。以
上の(1) (2)を同時に満たすことは容易ではない
ため、−膜内には、信頼性上絶縁耐圧を上げるため、シ
リコン酸化膜厚は1000〜2oooXとシリコン酸化
膜厚としてはかなり厚い膜厚を使用している。そのため
、コンデンサーとしての容量を得るため、1つのコンデ
ンサー面積として10000−1 oooooμm2程
度の工Cとしては大面積を必要となる。
(2) I want to increase the dielectric strength of the capacitor. This is because the silicon oxide film 203 should be thicker. Since it is not easy to satisfy the above (1) and (2) at the same time, - In order to increase the withstand voltage for reliability, the silicon oxide film thickness is 1000 to 200X, which is quite thick for a silicon oxide film thickness. The film thickness is used. Therefore, in order to obtain a capacitance as a capacitor, a large area is required for one capacitor, which is about 10000-1 ooooooum2.

[発明が解決しようとする課題] 本発明は、従来の方法で問題となっている絶縁耐圧及び
単位面積当りの容量という相反する課題を同時に解決し
ようとするものである。
[Problems to be Solved by the Invention] The present invention attempts to simultaneously solve the contradictory problems of dielectric strength voltage and capacitance per unit area, which are problems in conventional methods.

[課題を解決するための手段] 本発明では、比誘電率がシリコン1ン化膜の39に対し
、Z5と約2倍のシリコン窒化膜を多層で使用すること
に、従来より高容量、高耐圧のSaF構造を提供するも
のである。
[Means for Solving the Problems] In the present invention, a silicon nitride film with a dielectric constant of about twice Z5 as compared to 39 of a silicon nitride film is used in a multilayer structure, which results in higher capacitance and higher This provides a voltage-resistant SaF structure.

[実施例] 第1図に本発明の構造を示す。従来例と同しように、シ
リコン基板上101上に、多結晶シリコン膜102を4
50 OX形成し、抵抗を下げるため、この多結晶シリ
コン膜に、9oo℃の窒素POCt3雰囲気下で熱処理
を行ないシート抵抗で25Ω程度にした。次に11] 
00 ℃ドライ酸素雰囲気下で、この多結晶シリコン膜
102上に、約500Xのシリコン酸化膜105を成長
させ、さらに、1100℃の窒素、アンモニアガス雰囲
気下で約2時間の熱処理を行ない上記シリコン酸化膜1
03の一部を熱窒化し、シリコン窒化膜1゜4を形成し
た。さらに、cVD法によりシリコン屋化膜105を約
500X堆債成長させた。最後に、先の多結晶シリコン
膜102と回し方法をもって、第2多結晶シリコン膜1
06を形成した。
[Example] FIG. 1 shows the structure of the present invention. As in the conventional example, four polycrystalline silicon films 102 are formed on a silicon substrate 101.
50 OX was formed, and in order to lower the resistance, this polycrystalline silicon film was heat-treated in a nitrogen POCt3 atmosphere at 90° C. so that the sheet resistance was about 25 Ω. Next 11]
A silicon oxide film 105 of about 500X is grown on this polycrystalline silicon film 102 in a dry oxygen atmosphere of 00°C, and then heat-treated for about 2 hours in a nitrogen and ammonia gas atmosphere of 1100°C to remove the silicon oxide. Membrane 1
A portion of 03 was thermally nitrided to form a silicon nitride film 1.4. Furthermore, a silicon oxide film 105 was grown on a substrate of about 500× using the cVD method. Finally, using the above polycrystalline silicon film 102 and the turning method, the second polycrystalline silicon film 1
06 was formed.

尚、本実施例では、上記シリコン窒化膜105形成直後
、もしくは、第2多結晶シリコンj摸形成後のいづれか
にこのCVDシリコン窒化膜105の膜質の向上を目的
に、400〜i o o o ’aの水素を含むアルゴ
ンガス雰囲気下で、アニールを行った。
In this embodiment, 400 to io o o' is applied either immediately after the formation of the silicon nitride film 105 or after the formation of the second polycrystalline silicon j for the purpose of improving the film quality of the CVD silicon nitride film 105. Annealing was performed in an argon gas atmosphere containing hydrogen as described in a.

[発明の効果] 本発明に於いては、絶縁膜としてシリコン熱窒化膜及び
シリコン窒化膜を使うことにより、従来のシリコン酸化
膜を使5SOFに比べ、容量及び耐圧の両面より秀れた
結果を得た。従来法としてシリコン酸化膜厚1500X
のSOFと本発明のSOFを以下の第1表で比較する。
[Effects of the Invention] In the present invention, by using a silicon thermal nitride film and a silicon nitride film as the insulating film, superior results in both capacity and breakdown voltage can be achieved compared to the conventional 5SOF using a silicon oxide film. Obtained. Silicon oxide film thickness 1500X as conventional method
The SOF of the present invention is compared with the SOF of the present invention in Table 1 below.

本発明では、従来のSOFの約半分の面積でよ(、さら
に耐圧の向上により工程歩留シ、信頼性の上からも従来
より秀れた方法といえる。
The present invention can be said to be superior to the conventional method in terms of process yield and reliability, since the area is about half that of the conventional SOF (and the withstand voltage is improved).

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明のSOFの構成断面図。 第2図は従来例の断面図。 以上 FIG. 1 is a sectional view of the structure of the SOF of the present invention. FIG. 2 is a sectional view of a conventional example. that's all

Claims (1)

【特許請求の範囲】[Claims] 多結晶シリコン膜が形成されていること、該多結晶シリ
コン膜の熱酸化によるシリコン酸化膜が形成されている
こと、該シリコン酸化膜を熱窒化膜されていること、C
VDシリコン窒化膜が形成されていること、多結晶シリ
コン膜が形成されていることを特徴とする半導体装置。
A polycrystalline silicon film is formed, a silicon oxide film is formed by thermal oxidation of the polycrystalline silicon film, the silicon oxide film is thermally nitrided, C.
A semiconductor device characterized in that a VD silicon nitride film is formed and a polycrystalline silicon film is formed.
JP20698588A 1988-08-19 1988-08-19 Semiconductor device Pending JPH0255415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20698588A JPH0255415A (en) 1988-08-19 1988-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20698588A JPH0255415A (en) 1988-08-19 1988-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0255415A true JPH0255415A (en) 1990-02-23

Family

ID=16532270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20698588A Pending JPH0255415A (en) 1988-08-19 1988-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0255415A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276885A (en) * 1988-02-25 1990-03-16 Lithium Corp Of America Production of organometal amide composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276885A (en) * 1988-02-25 1990-03-16 Lithium Corp Of America Production of organometal amide composition
JPH0631264B2 (en) * 1988-02-25 1994-04-27 リチウム・コーポレーシヨン・オブ・アメリカ Production of organometallic amide composition

Similar Documents

Publication Publication Date Title
US4464701A (en) Process for making high dielectric constant nitride based materials and devices using the same
JPS60153158A (en) Manufacture of semiconductor device
US7022623B2 (en) Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process
JPH0255415A (en) Semiconductor device
JP3242732B2 (en) Capacitor
JPH0255416A (en) Semiconductor device
JPH02268412A (en) Manufacture of capacitor
JPH0277149A (en) Semiconductor device and manufacture thereof
JPS6049662A (en) Manufacture of semiconductor device
JPS609155A (en) Memory device
JP3285618B2 (en) Method for manufacturing semiconductor memory device
JPH01308078A (en) Manufacture of semiconductor device
JPH0555198A (en) Manufacture of semiconductor device
JP2842088B2 (en) Method for manufacturing gate insulating film
JPH10178159A (en) Semiconductor device having capacitor and manufacture thereof
JPH03280466A (en) Manufacture of semiconductor device insulating film
JP2903735B2 (en) Semiconductor device
JPS58182835A (en) Treatment of substrate for thin film transistor
JPH033357A (en) Semiconductor device
JPH0115137B2 (en)
JPH0281421A (en) Forming method for polycrystalline silicon film
JP2699625B2 (en) Method for manufacturing semiconductor device
JPS60261164A (en) Manufacture of groove type mos capacitor
JPH036022A (en) Formation of multilayer insulating film
JPS61251170A (en) Mis type semiconductor device