JPH0255415A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0255415A JPH0255415A JP20698588A JP20698588A JPH0255415A JP H0255415 A JPH0255415 A JP H0255415A JP 20698588 A JP20698588 A JP 20698588A JP 20698588 A JP20698588 A JP 20698588A JP H0255415 A JPH0255415 A JP H0255415A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- nitride film
- nearly
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 229910019213 POCl3 Inorganic materials 0.000 abstract 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Filters That Use Time-Delay Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ＭＯ３型集積回路（ＭＯ３工Ｃ）に於げるＳ
ＯＦ （５ｗ１ｔｃｈｅｄ ＣａｐａｃｉｔｏｒＦ
ｉｌｔｅｒ ）の横置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the S
OF (5w1tched CapacitorF
regarding the horizontal placement of (ilter).
［従来の技術］
第２図に示すように、従来ＭＯＳ工０でＳＯＦを形成す
る場合、シリコン基板２０１上に、第１多結晶シリコン
層２０２を形成し、この抵抗を下げる目的で、リン、ヒ
素などのＮ型不純物を、熱拡散もしくは、イオン注入に
よりドープする。次にこの第１多結晶シリコン膜２０２
を、８００〜１１００℃のドライ酸素雰囲気もしくは、
水分もしくは水素を含んだ酸素雰囲気で熱「ｐ化しシリ
コン酸化膜２０５を形成する。次に第１多結晶シリコン
と同様な方法で、Ｎ型不純物を含む第２多結晶シリコン
膜２０４を形成し、先の第１多結晶シリコン２０２が電
極となり、絶縁体としてシリコン酸化膜２０６からなる
コンデンサーとなる。ここで、このコンデンサーに求め
られる条件は次のようなものがある。[Prior Art] As shown in FIG. 2, when forming an SOF using a conventional MOS process, a first polycrystalline silicon layer 202 is formed on a silicon substrate 201, and in order to lower this resistance, phosphorus, An N-type impurity such as arsenic is doped by thermal diffusion or ion implantation. Next, this first polycrystalline silicon film 202
in a dry oxygen atmosphere at 800 to 1100°C or
A silicon oxide film 205 is formed by thermal p conversion in an oxygen atmosphere containing moisture or hydrogen.Next, a second polycrystalline silicon film 204 containing N-type impurities is formed in the same manner as the first polycrystalline silicon film. The first polycrystalline silicon 202 serves as an electrode, and a capacitor is formed of the silicon oxide film 206 as an insulator.The following conditions are required for this capacitor.
（１） 単位面積当りの容量を極力太き（したい。つ
まり、シリコン酸化膜２０ろは、薄い方がよい。(1) We want to make the capacitance per unit area as large as possible. In other words, the thinner the silicon oxide film, the better.
（２） コンデンサーとしての絶縁耐圧を大きくした
い。これはシリコン酸化膜２０３は、厚い方がよい。以
上の（１） （２）を同時に満たすことは容易ではない
ため、−膜内には、信頼性上絶縁耐圧を上げるため、シ
リコン酸化膜厚は１０００〜２ｏｏｏＸとシリコン酸化
膜厚としてはかなり厚い膜厚を使用している。そのため
、コンデンサーとしての容量を得るため、１つのコンデ
ンサー面積として１００００−１ ｏｏｏｏｏμｍ２程
度の工Ｃとしては大面積を必要となる。(2) I want to increase the dielectric strength of the capacitor. This is because the silicon oxide film 203 should be thicker. Since it is not easy to satisfy the above (1) and (2) at the same time, - In order to increase the withstand voltage for reliability, the silicon oxide film thickness is 1000 to 200X, which is quite thick for a silicon oxide film thickness. The film thickness is used. Therefore, in order to obtain a capacitance as a capacitor, a large area is required for one capacitor, which is about 10000-1 ooooooum2.
［発明が解決しようとする課題］
本発明は、従来の方法で問題となっている絶縁耐圧及び
単位面積当りの容量という相反する課題を同時に解決し
ようとするものである。[Problems to be Solved by the Invention] The present invention attempts to simultaneously solve the contradictory problems of dielectric strength voltage and capacitance per unit area, which are problems in conventional methods.
［課題を解決するための手段］
本発明では、比誘電率がシリコン１ン化膜の３９に対し
、Ｚ５と約２倍のシリコン窒化膜を多層で使用すること
に、従来より高容量、高耐圧のＳａＦ構造を提供するも
のである。[Means for Solving the Problems] In the present invention, a silicon nitride film with a dielectric constant of about twice Z5 as compared to 39 of a silicon nitride film is used in a multilayer structure, which results in higher capacitance and higher This provides a voltage-resistant SaF structure.
［実施例］
第１図に本発明の構造を示す。従来例と同しように、シ
リコン基板上１０１上に、多結晶シリコン膜１０２を４
５０ ＯＸ形成し、抵抗を下げるため、この多結晶シリ
コン膜に、９ｏｏ℃の窒素ＰＯＣｔ３雰囲気下で熱処理
を行ないシート抵抗で２５Ω程度にした。次に１１］
００ ℃ドライ酸素雰囲気下で、この多結晶シリコン膜
１０２上に、約５００Ｘのシリコン酸化膜１０５を成長
させ、さらに、１１００℃の窒素、アンモニアガス雰囲
気下で約２時間の熱処理を行ない上記シリコン酸化膜１
０３の一部を熱窒化し、シリコン窒化膜１゜４を形成し
た。さらに、ｃＶＤ法によりシリコン屋化膜１０５を約
５００Ｘ堆債成長させた。最後に、先の多結晶シリコン
膜１０２と回し方法をもって、第２多結晶シリコン膜１
０６を形成した。[Example] FIG. 1 shows the structure of the present invention. As in the conventional example, four polycrystalline silicon films 102 are formed on a silicon substrate 101.
50 OX was formed, and in order to lower the resistance, this polycrystalline silicon film was heat-treated in a nitrogen POCt3 atmosphere at 90° C. so that the sheet resistance was about 25 Ω. Next 11]
A silicon oxide film 105 of about 500X is grown on this polycrystalline silicon film 102 in a dry oxygen atmosphere of 00°C, and then heat-treated for about 2 hours in a nitrogen and ammonia gas atmosphere of 1100°C to remove the silicon oxide. Membrane 1
A portion of 03 was thermally nitrided to form a silicon nitride film 1.4. Furthermore, a silicon oxide film 105 was grown on a substrate of about 500× using the cVD method. Finally, using the above polycrystalline silicon film 102 and the turning method, the second polycrystalline silicon film 1
06 was formed.
尚、本実施例では、上記シリコン窒化膜１０５形成直後
、もしくは、第２多結晶シリコンｊ摸形成後のいづれか
にこのＣＶＤシリコン窒化膜１０５の膜質の向上を目的
に、４００〜ｉ ｏ ｏ ｏ ’ａの水素を含むアルゴ
ンガス雰囲気下で、アニールを行った。In this embodiment, 400 to io o o' is applied either immediately after the formation of the silicon nitride film 105 or after the formation of the second polycrystalline silicon j for the purpose of improving the film quality of the CVD silicon nitride film 105. Annealing was performed in an argon gas atmosphere containing hydrogen as described in a.
［発明の効果］
本発明に於いては、絶縁膜としてシリコン熱窒化膜及び
シリコン窒化膜を使うことにより、従来のシリコン酸化
膜を使５ＳＯＦに比べ、容量及び耐圧の両面より秀れた
結果を得た。従来法としてシリコン酸化膜厚１５００Ｘ
のＳＯＦと本発明のＳＯＦを以下の第１表で比較する。[Effects of the Invention] In the present invention, by using a silicon thermal nitride film and a silicon nitride film as the insulating film, superior results in both capacity and breakdown voltage can be achieved compared to the conventional 5SOF using a silicon oxide film. Obtained. Silicon oxide film thickness 1500X as conventional method
The SOF of the present invention is compared with the SOF of the present invention in Table 1 below.
本発明では、従来のＳＯＦの約半分の面積でよ（、さら
に耐圧の向上により工程歩留シ、信頼性の上からも従来
より秀れた方法といえる。The present invention can be said to be superior to the conventional method in terms of process yield and reliability, since the area is about half that of the conventional SOF (and the withstand voltage is improved).
第１図は、本発明のＳＯＦの構成断面図。 第２図は従来例の断面図。 以上 FIG. 1 is a sectional view of the structure of the SOF of the present invention. FIG. 2 is a sectional view of a conventional example. that's all
Claims (1)
コン膜の熱酸化によるシリコン酸化膜が形成されている
こと、該シリコン酸化膜を熱窒化膜されていること、Ｃ
ＶＤシリコン窒化膜が形成されていること、多結晶シリ
コン膜が形成されていることを特徴とする半導体装置。A polycrystalline silicon film is formed, a silicon oxide film is formed by thermal oxidation of the polycrystalline silicon film, the silicon oxide film is thermally nitrided, C.
A semiconductor device characterized in that a VD silicon nitride film is formed and a polycrystalline silicon film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20698588A JPH0255415A (en) | 1988-08-19 | 1988-08-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20698588A JPH0255415A (en) | 1988-08-19 | 1988-08-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0255415A true JPH0255415A (en) | 1990-02-23 |
Family
ID=16532270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20698588A Pending JPH0255415A (en) | 1988-08-19 | 1988-08-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0255415A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0276885A (en) * | 1988-02-25 | 1990-03-16 | Lithium Corp Of America | Production of organometal amide composition |
-
1988
- 1988-08-19 JP JP20698588A patent/JPH0255415A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0276885A (en) * | 1988-02-25 | 1990-03-16 | Lithium Corp Of America | Production of organometal amide composition |
| JPH0631264B2 (en) * | 1988-02-25 | 1994-04-27 | リチウム・コーポレーシヨン・オブ・アメリカ | Production of organometallic amide composition |
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