JPH0252362U - - Google Patents

Info

Publication number
JPH0252362U
JPH0252362U JP12887488U JP12887488U JPH0252362U JP H0252362 U JPH0252362 U JP H0252362U JP 12887488 U JP12887488 U JP 12887488U JP 12887488 U JP12887488 U JP 12887488U JP H0252362 U JPH0252362 U JP H0252362U
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor substrate
conductive layer
type semiconductor
unipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12887488U
Other languages
Japanese (ja)
Other versions
JPH0711475Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988128874U priority Critical patent/JPH0711475Y2/en
Publication of JPH0252362U publication Critical patent/JPH0252362U/ja
Application granted granted Critical
Publication of JPH0711475Y2 publication Critical patent/JPH0711475Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図ａ，ｂ及びｃは本考案による一実施例を
示す太陽電池セルの上面図、裏面図及びＡＡ断面
図、第２図ａイ〜ニは本考案の一実施例の太陽電
池セルの割れモードを示す太陽電池セルの模式平
面図、第２図ｂイ〜ニは従来の太陽電池セルの割
れモードを示す太陽電池セルの模式平面図、第３
図、第４図及び第５図ａ，ｂ及びｃは従来の太陽
電池セルの構造を示す上面図、裏面図及び断面図
である。 １……一導電型半導体基板、２……逆極性収集
電極、３……逆導電型導電層、４，４ａ……一極
性収集電極、５……グリツド電極、６……クラツ
ク、７……被覆電極。 Figures 1a, b, and c are top views, back views, and AA cross-sectional views of a solar cell showing an embodiment of the present invention, and Figures 2a-a to d are views of a solar cell according to an embodiment of the present invention. A schematic plan view of a solar cell showing the cracking mode; FIG.
Figures 4 and 5a, b, and c are a top view, a back view, and a sectional view showing the structure of a conventional solar cell. DESCRIPTION OF SYMBOLS 1...Semiconductor substrate of one conductivity type, 2...Reverse polarity collector electrode, 3...Reverse conductivity type conductive layer, 4, 4a...Unipolar collector electrode, 5...Grid electrode, 6...Crack, 7... Covered electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 四角形状の一導電型半導体基板の一主面に形成
された逆導電型導電層と、この逆導電型導電層の
上にオーミツクコンタクトする多数のグリツト電
極と、この多数のグリツト電極の一端を接続する
とともに前記逆導電型導電層または前記一主面と
反対側の前記一電型半導体基板上に形成された矩
形状の一極性収集電極と、前記一導電型半導体基
板上に形成されるとともにオーミツクコンタクト
する逆極性収集電極とを有する太陽電池セルにお
いて、前記逆導電型導電層上の前記一極性収集電
極が前記一導電型半導体基板の対角線上の角部に
それぞれの短辺の一端を接し前記一導電型半導体
基板の相対する辺に沿つて長辺が形成されるとと
もに前記一極性収集電極の長辺の一辺が前記一導
電型半導体基板の側面を介して裏面まで伸びるこ
とを特徴とする太陽電池セル。 A conductive layer of an opposite conductivity type formed on one principal surface of a rectangular semiconductor substrate of one conductivity type, a number of grit electrodes in ohmic contact on the conductive layer of the opposite conductivity type, and one end of the many grit electrodes. a rectangular unipolar collecting electrode connected to the opposite conductivity type conductive layer or formed on the monoconductivity type semiconductor substrate on the opposite side to the one main surface; In a solar cell having a reverse polarity collector electrode in ohmic contact, the unipolar collector electrode on the opposite conductivity type conductive layer has one end of each short side at a diagonal corner of the one conductivity type semiconductor substrate. Long sides are formed along opposing sides of the one-conductivity type semiconductor substrate in contact with each other, and one long side of the unipolar collecting electrode extends to the back side of the one-conductivity type semiconductor substrate through the side surface of the one-conductivity type semiconductor substrate. solar cells.
JP1988128874U 1988-09-30 1988-09-30 Solar cell Expired - Lifetime JPH0711475Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988128874U JPH0711475Y2 (en) 1988-09-30 1988-09-30 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988128874U JPH0711475Y2 (en) 1988-09-30 1988-09-30 Solar cell

Publications (2)

Publication Number Publication Date
JPH0252362U true JPH0252362U (en) 1990-04-16
JPH0711475Y2 JPH0711475Y2 (en) 1995-03-15

Family

ID=31382620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988128874U Expired - Lifetime JPH0711475Y2 (en) 1988-09-30 1988-09-30 Solar cell

Country Status (1)

Country Link
JP (1) JPH0711475Y2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078741A1 (en) * 2006-12-26 2008-07-03 Kyocera Corporation Solar cell module
WO2009028287A1 (en) * 2007-08-31 2009-03-05 Sharp Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion element connecting body and photoelectric conversion module
JP2013042185A (en) * 2008-03-31 2013-02-28 Kyocera Corp Solar cell element and solar cell module
JP2018078278A (en) * 2016-09-14 2018-05-17 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ Solar cell for solar cell array

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129884A (en) * 1974-09-06 1976-03-13 Sharp Kk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5129884A (en) * 1974-09-06 1976-03-13 Sharp Kk

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008078741A1 (en) * 2006-12-26 2008-07-03 Kyocera Corporation Solar cell module
JPWO2008078741A1 (en) * 2006-12-26 2010-04-30 京セラ株式会社 Solar cell module
US8575475B2 (en) 2006-12-26 2013-11-05 Kyocera Corporation Solar cell module with rear contacts
WO2009028287A1 (en) * 2007-08-31 2009-03-05 Sharp Kabushiki Kaisha Photoelectric conversion element, photoelectric conversion element connecting body and photoelectric conversion module
JP2013042185A (en) * 2008-03-31 2013-02-28 Kyocera Corp Solar cell element and solar cell module
US9209332B2 (en) 2008-03-31 2015-12-08 Kyocera Corporation Solar cell element and solar cell module
JP2018078278A (en) * 2016-09-14 2018-05-17 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ Solar cell for solar cell array

Also Published As

Publication number Publication date
JPH0711475Y2 (en) 1995-03-15

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