JPH0250951A - Method and apparatus for manufacturing transparent conductive film - Google Patents
Method and apparatus for manufacturing transparent conductive filmInfo
- Publication number
- JPH0250951A JPH0250951A JP63198882A JP19888288A JPH0250951A JP H0250951 A JPH0250951 A JP H0250951A JP 63198882 A JP63198882 A JP 63198882A JP 19888288 A JP19888288 A JP 19888288A JP H0250951 A JPH0250951 A JP H0250951A
- Authority
- JP
- Japan
- Prior art keywords
- target
- transparent conductive
- conductive film
- sputtering
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 abstract description 10
- 238000002834 transmittance Methods 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 2
- 230000001376 precipitating effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000005219 brazing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は液晶表示装置等に使用される
１１１１−ＸＳ ｒｒｘ系透明導電膜の製造方法及び製
造装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and apparatus for manufacturing a 1111-XS rrx-based transparent conductive film used in liquid crystal display devices and the like.
（従来の技術）
従来、この種の透明導電膜の製造方法として、スパッタ
法、蒸着法、ＣＶＤ法等が知られており、該透明導電膜
の用途によってこれらの方法のうち適当な方法を採用し
ている。このうちスパッタ法は、Ｉｎ−Ｓｎ合金ターゲ
ットを用いる場合と、 Ｉｎ２０３−ＳｎＯ２系酸化物
ターゲットを用いる場合とがあるが、導電性と光透過率
が安定した膜か得られる利点のある後者の方が多く使わ
れている。(Prior Art) Sputtering, vapor deposition, CVD, and other methods are conventionally known as methods for producing this type of transparent conductive film, and an appropriate method among these methods is adopted depending on the use of the transparent conductive film. are doing. Among these methods, the sputtering method uses an In-Sn alloy target or an In203-SnO2-based oxide target, but the latter method has the advantage of producing a film with stable conductivity and light transmittance. is often used.
後者のスパッタ法について更に説明すると、１ｎ２０３
ＳｎＯ２系酸化物ターゲットをＣｕやＳＵＳ製のバッ
キングプレートに低融点金属のロウ材によりボンディン
グし、そのバッキングプレー１・を真空室内の基板と対
向するスパッタカソードに取付け、該カソードに負の電
圧を印加してスパッタを行う。この場合、該真空室には
、プラズマ放電を発生させるだめのガスとして、Ａｒ等
の不活性ガスに０２ガスを適当量含有させた混合ガスが
導入される。そして０２ガスの混合量を変化させ、最適
の導電性と光透過率をもった透明導電膜を基板上に得る
。この際、ターゲットは、Ａｒイオンによりボンバード
されて発熱するので、バッキングプレートの背面から水
冷される。To further explain the latter sputtering method, 1n203
A SnO2-based oxide target is bonded to a backing plate made of Cu or SUS using a low-melting metal brazing material, and the backing plate 1 is attached to a sputtering cathode facing the substrate in a vacuum chamber, and a negative voltage is applied to the cathode. and perform sputtering. In this case, a mixed gas containing an appropriate amount of 02 gas in an inert gas such as Ar is introduced into the vacuum chamber as a gas for generating plasma discharge. Then, by changing the mixed amount of 02 gas, a transparent conductive film with optimal conductivity and light transmittance is obtained on the substrate. At this time, the target is bombarded with Ar ions and generates heat, so it is water-cooled from the back side of the backing plate.
（発明か解決しようとする課題）
前記従来のスパッタ法で透明導電膜を製造する場合、連
続的にスパッタを行なっていると、Ｉｎ２Ｏ３−ＳｎＯ
２系酸化物ターゲットの表面が黒色に変色し、その程度
や面積がスパッタ時間とともに増加する現象か起る。そ
して、その結果、基板上への透明導電膜の析出速度が低
下し、作製した護膜の導電性と光透過率が悪化するとい
う問題か生ずる。(Problem to be solved by the invention) When manufacturing a transparent conductive film by the conventional sputtering method, if sputtering is performed continuously, In2O3-SnO
A phenomenon occurs in which the surface of the 2-system oxide target turns black, and the degree and area of the change increases with sputtering time. As a result, the deposition rate of the transparent conductive film on the substrate decreases, resulting in a problem that the conductivity and light transmittance of the prepared protective film deteriorate.
この問題の原因について、発明者は種々の検討の結果、
次のようなことであることか究明された。即ち、前記タ
ーゲットの表面の黒色物は、Ｉｎ（Ｓｎ）Ｏの組成に近
い非晶質の物質で、ＩｎやＳｎは２価になっているもの
か多く、その電気抵抗は Ｉ １１２０３やＳｎＯ２に
較べて極めて高いこと、そして該黒色物は、スパッタ中
にターゲットより飛び出したＩｎやＳｎ原子がＯ原子と
共に再度ターケラト表面に析出することにより生成され
、−旦この物質が生成すると、電気抵抗か高いためスパ
ッタされにくく、その上に続々と析出するので、スパッ
タ時間と共に黒色物か増加し、これに伴なって析出速度
か低下すること、か原因であると分かった。従って、長
時間連続して多数枚の基板に順次透明導電膜を作製して
いる時には、その膜厚か徐々に薄くなるという問題か生
じる。As a result of various studies regarding the cause of this problem, the inventor found that
It was determined that the following was the case. That is, the black material on the surface of the target is an amorphous material with a composition similar to In(Sn)O, and In and Sn are often divalent, and their electrical resistance is similar to that of I11203 and SnO2. The black material is produced by the In and Sn atoms ejected from the target during sputtering and re-precipitated on the Terkerat surface together with O atoms, and once this material is produced, the electrical resistance is high. It was found that this is because the black particles increase with sputtering time and the deposition rate decreases as the sputtering time increases. Therefore, when transparent conductive films are sequentially formed on a large number of substrates over a long period of time, the problem arises that the film thickness gradually becomes thinner.
また該黒色非晶物質も幾分スパッタされ、該膜中に混入
するが、該物質は電気抵抗が高く黒色であるため、形成
される透明導電膜の導電性と透過率か悪化する原因であ
ることも分った。In addition, some of the black amorphous material is sputtered and mixed into the film, but since this material has high electrical resistance and is black, it causes deterioration in the conductivity and transmittance of the transparent conductive film formed. I also realized that.
特に透過率の悪化の問題は基板の温度か低い場合に著し
い。In particular, the problem of deterioration of transmittance is significant when the temperature of the substrate is low.
本発明は、 １１１１−Ｘｓ ｎＸ系透明導電膜の製造
に伴なう前記問題点を解決する製造方法と装置を提案す
ることを目的とするものである。An object of the present invention is to propose a manufacturing method and apparatus that solve the above-mentioned problems associated with manufacturing a 1111-Xs nX-based transparent conductive film.
（課題を解決するための手段）
本発明では、 １１１１−ＸＳ ｎｘ酸化物系（０≦ｘ
≦１）透明導電膜を、 ｌ１１２Ｏ３−８口０２系酸化
物ターゲットを用いたスパッタ法により作成する方法に
おいて、該ターゲットを１００℃以上に加熱し乍らスパ
ッタを行なうことにより、該ターゲットの表面に黒色の
非晶質物質の析出を防ぎ、導電性と光透過率の良い透明
導電膜を迅速に作製するようにした。(Means for Solving the Problems) In the present invention, 1111-XS nx oxide system (0≦x
≦1) In a method of creating a transparent conductive film by a sputtering method using a l112O3-8 type oxide target, sputtering is performed while heating the target to a temperature of 100° C. or higher, thereby forming a transparent conductive film on the surface of the target. A transparent conductive film with good conductivity and light transmittance can be rapidly produced by preventing the precipitation of black amorphous substances.
そしてこの方法は、真空室内に、基板と１ ｌＩ２０Ｂ
−５ｎＯ７系酸化物ターゲットとを互に対向して設け
、該基板と該ターゲット間に生するプラズマ放電により
該基板に ｌｌＴ＋ −ｘＳ ｎｘ酸化物系（０≦ｘ≦
１）透明導電膜を形成するようにした装置に於て、該タ
ーゲットの表面を１００℃以上に加熱するヒータを設け
た装置或は該ターゲットの背面から該ターゲットを１０
０℃以上に加熱する熱媒体による加熱装置を設けて実施
される。And in this method, the substrate and 1 lI20B are placed in a vacuum chamber.
-5nO7-based oxide targets are provided facing each other, and the plasma discharge generated between the substrate and the target causes the substrate to become llT+ -xS nx oxide-based (0≦x≦
1) In an apparatus designed to form a transparent conductive film, the target is heated to 100° C. or
This is carried out by providing a heating device that uses a heat medium to heat the temperature to 0° C. or higher.
（作 用）
真空室内の基板に対向して設けられたスパッタカソード
上に Ｉ １１２０３−３ｎ０２系酸化物ターゲットを
設け、該真空室内に０２ガスを混入したＡｒカスを導入
し、該カソードに負の電位を与えてスパッタにより該基
板上に透明導電膜を形成することは従来の場合と同様で
あるが、本発明では、この場合該ターゲットをヒータ又
は熱媒体による加熱装置で１００℃以上に加熱し乍らス
パッタするもので、この加熱により該ターゲット上に前
期従来のもののような黒色の非晶質物質が析出すること
か防止される。これは、該非晶質物質は、非平衡物質で
あるため」００℃以上では存在できないためであり、１
００℃以上では結晶質の Ｉｎ２Ｏ３ ＳｎＯ□にな
るか或はわずかの金属ＩｎとＩｎ２Ｏ３−ＳｎＯ２にな
る。そして金属Ｉｎは Ｉ １１２０３Ｓｎ０２にくら
べてスパッタ率か高いので、すぐスパッタされてしまい
、ターゲット上に析出しない。(Function) An I11203-3n02-based oxide target is provided on a sputtering cathode provided facing the substrate in a vacuum chamber, Ar scum mixed with 02 gas is introduced into the vacuum chamber, and a negative Forming a transparent conductive film on the substrate by applying a potential and sputtering is the same as in the conventional case, but in the present invention, in this case, the target is heated to 100° C. or higher with a heater or a heating device using a heat medium. This heating prevents a black amorphous material from being deposited on the target as in the prior art. This is because the amorphous substance is a non-equilibrium substance and cannot exist at temperatures above 00°C.
At temperatures above 00°C, it becomes crystalline In2O3SnO□ or becomes a small amount of metal In and In2O3-SnO2. Since metal In has a higher sputtering rate than I11203Sn02, it is sputtered immediately and is not deposited on the target.
い。stomach.
従って基板上に析出する Ｈ）２０３ ＳｎＯ２は、
ターゲットと同質の物質であるから、導電性に富み、透
過性もよく比較的迅速に透明導電膜を形成出来る。Therefore, H)203 SnO2 deposited on the substrate is
Since it is a substance of the same quality as the target, it has high conductivity and good transparency, and a transparent conductive film can be formed relatively quickly.
（実施例）
本発明の実施例を別紙図面につき説明するに、第１図及
び第２図に於て、符号（１）は、適当な真空排気手段に
接続される排気口（２）と、Ａｒガスに０２ガスを混入
したスパッタガスの導入口（３）を備えた真空室、（４
）及び（５）は該真空室（１）内に互に対向して設けた
基板及びスパッタカソードを示し、該基板（４）の背後
にこれを加熱するヒータ（６）を設けるようにした。ま
た該スパッタカソード（５）はバッキングプレー１−
（７）の背後に磁石（８）を収容した容筒（９）を備え
るものとし、該磁石（８）により該バッキングプレート
（７）の前面にロウ材てホンディングした ｌ １１２
０３−ＳｎＯ３系酸化物ターゲット（１Ｇ＋の表面に磁
界を形成してマグネトロン式のスパッタを行なえるよう
にした。（１１）はアースシールド、ｑｂは防着板であ
る。(Embodiment) An embodiment of the present invention will be described with reference to the attached drawings. In FIGS. 1 and 2, reference numeral (1) indicates an exhaust port (2) connected to a suitable evacuation means; a vacuum chamber (4) equipped with an inlet (3) for a sputtering gas containing Ar gas mixed with 02 gas;
) and (5) show a substrate and a sputtering cathode that are provided facing each other in the vacuum chamber (1), and a heater (6) for heating the substrate (4) is provided behind the substrate (4). Moreover, the sputter cathode (5) is connected to the backing plate 1-
A container (9) containing a magnet (8) is provided behind the backing plate (7), and the magnet (8) is used to bond the front surface of the backing plate (7) with brazing material.
03-SnO3-based oxide target (1G+) A magnetic field was formed on the surface to enable magnetron sputtering. (11) is an earth shield, and qb is an anti-adhesion plate.
該ターゲット（１０）は、第１図示の場合、ターゲット
（１Ｇ＋の前方に設けたシース型ニクロム線ヒタやタン
タル線ヒータ等のヒータ（１３により １００℃以上に
加熱されるようにし、この場合、該８筺（９）に冷却水
を配管ｉ′１４）（Ｉ４１を介して循環させ、バッキン
グプレー１− （７）を水冷した。該ヒータ（１３は可
変変圧器に接続され、加熱温度を調節するように構成さ
れる。In the case shown in Figure 1, the target (10) is heated to 100°C or higher by a heater (13) such as a sheathed nichrome wire heater or a tantalum wire heater provided in front of the target (1G+). Cooling water was circulated through the pipe i'14) (I41) in the 8-casing (9), and the backing plate 1- (7) was water-cooled.The heater (13) was connected to a variable transformer to adjust the heating temperature. It is configured as follows.
第２図示の場合、該ターゲットａ■は、高融点のロウ材
によりバッキングプレート（７）にポンディングされ、
その背後の容筒（９）に配管（１４） （１＠を介して
循環される例えばオイル系の耐熱温度が３００℃以上の
熱媒体（＋５）により加熱され、この場合、好ましくは
該熱媒体は自動温度調節式の加熱器により加熱される。In the case shown in the second diagram, the target a is bonded to the backing plate (7) with a high melting point brazing material,
The cylinder (9) behind it is heated by a heat medium (+5) having an allowable temperature limit of 300°C or higher, for example, an oil system, which is circulated through the pipe (14) (1@), and in this case, it is preferable that the heat medium is heated by a self-temperature-controlled heater.
第１図示の装置に於いて、カソード（５）に、現在最も
代表的な ｌ １１２０３に１０％！１ｌｉｎ０２か混
入した酸化物ターゲット（ＩＯを設置し、ヒータ０ｅで
全く加熱せずに２５時間の連続スパッタを行ない、ター
ゲット（ＩＧ＋の表面に充分に黒色の非晶質物質を析出
させた。この状態ではターゲト（’ＩＱ）の表面に抵抗
の大きい非晶質物質が析出しているので、スパッタ時の
放電インピーダンスか高い。具体的には、真空室（１）
のＡｒガス圧が５ Ｘ １Ｏ−３Ｔｏｒｒ。In the device shown in the first diagram, the cathode (5) has 10% to the currently most typical l 11203! An oxide target (IO) mixed with 1lin02 was installed, and continuous sputtering was performed for 25 hours without heating at all with heater 0e, and a black amorphous substance was sufficiently deposited on the surface of the target (IG+). In this state Since an amorphous substance with high resistance is deposited on the surface of the target ('IQ), the discharge impedance during sputtering is high.Specifically, the vacuum chamber (1)
The Ar gas pressure was 5 x 1O-3Torr.
導入酸素ガス分圧か４ Ｘ １Ｏ−５Ｔｏｒｒ、ターゲ
ット（ＩＯの寸法が５インチＸ１Ｂインチである場合、
４１０Ｖ一定で放電させると、上記黒色状態のターゲッ
トａ■ては、放電電流が１，９Ａてあった。The partial pressure of the introduced oxygen gas is 4 X 10-5 Torr, the target (if the dimensions of the IO are 5 inches X 1B inches,
When the target was discharged at a constant voltage of 410 V, the discharge current was 1.9 A for the black target a.
次に、基板（４）を代え、ヒータ（１，ｌｃで加熱して
黒色のターゲットａＯの表面を５０℃から ２００℃ま
で順次加熱して３０分間保持し、前記具体例と同条件で
４１０Ｖで放電させて電流値を測定した。夕ゲット（１
０の表面温度はサーモラベルを用いて測定した。その結
果は第３図示の如くであった。Next, the substrate (4) was replaced, and the surface of the black target aO was heated with a heater (1, lc) sequentially from 50°C to 200°C, held for 30 minutes, and heated at 410V under the same conditions as in the previous example. The current value was measured after discharging.
The surface temperature of 0 was measured using a thermolabel. The results were as shown in Figure 3.
この結果から分かるように、１００℃より放電電流の増
大の効果が表われはじめ、１５０℃以上では一定となり
、２．２Ａの電流か得られた。そして、この放電の後に
は、ターゲットｑ■の表面に析出していた黒色物質は消
失していた。この時の基板（４）に形成された透明導電
膜の析出速度、電気抵抗率及び５５０ｎｍにおける光透
過率は第４図示の如くであった。尚、基板（４）の温度
は２００℃一定とした。ターゲット（１０の加熱用ヒタ
（１３によっても基板（４）が加熱されるので、あらか
じめ基板（４）の温度が２００℃になるように、それぞ
れのターゲット表面温度に対して基板加熱ヒータ（６）
の出力を調節した。As can be seen from this result, the effect of increasing the discharge current began to appear at 100°C, and became constant at 150°C or higher, resulting in a current of 2.2A. After this discharge, the black substance deposited on the surface of target q had disappeared. The deposition rate, electrical resistivity, and light transmittance at 550 nm of the transparent conductive film formed on the substrate (4) at this time were as shown in the fourth diagram. Note that the temperature of the substrate (4) was kept constant at 200°C. Since the substrate (4) is also heated by the heating heater (13) of the target (10), the substrate heating heater (6) is used for each target surface temperature so that the temperature of the substrate (4) is 200°C in advance.
Adjusted the output.
第４図の結果から明らかなように、ターゲラｈ （１０
）の温度が１００℃から析出速度は増加し、電気抵抗率
は減少し、光透過率は増加する。そして１５０℃以上で
一定となる。As is clear from the results in Figure 4, Targera h (10
) At a temperature of 100°C, the deposition rate increases, the electrical resistivity decreases, and the light transmittance increases. And it becomes constant above 150°C.
第２図示のカソード（３）を使用して前記の場合と同様
の実験を行なったが、同様の結果か得られた。An experiment similar to that described above was conducted using the cathode (3) shown in the second figure, and similar results were obtained.
（発明の効果）
以上のように本発明の方法によるときは、Ｉｎ２Ｏ３−
ＳｎＯ３系酸化物ターゲットを１００℃以上に加熱し乍
らスパッタするようにしたので、該ターゲット上に黒色
物質を析出することなくスパッタを行なえ、迅速に透明
導電膜を製造できると共に導電性と光透過性の良い透明
導電膜が得られる効果があり、その方法は透明導電膜を
スパッタにより作成する装置に於てターゲット表面を加
熱するヒータ、或はその背面から熱媒体により加熱する
装置を設けた装置によって簡単に実施することか出来る
。(Effect of the invention) As described above, when using the method of the present invention, In2O3-
Since sputtering is performed while heating the SnO3-based oxide target to 100°C or higher, sputtering can be performed without depositing a black substance on the target, and a transparent conductive film can be rapidly produced, while improving conductivity and light transmission. This method has the effect of obtaining a transparent conductive film with good properties, and the method is to use a device that creates a transparent conductive film by sputtering, and is equipped with a heater that heats the target surface, or a device that heats the target surface with a heat medium from the back side. It can be easily implemented by
第１図及び第２図は本発明の方法の実施に使用した製造
装置の断面図、第３図はターゲットの温度と放電電流の
関係を示す線図、第４図は本発明の方法により作製され
た透明導電膜の特性を示す線図である。
１コ
（１）・・・真 空 室 （４）・・・基ＧＧ
−１ｌＴ２０３ ＳｎＯ２系酸化物り■・・・ヒ −
タ （＋５＋・・・熱ゲット
（ＩｉＪ”０９９’１０） 壽＃Ｆ
（田りυ１０ＬリキＶ↓賓Figures 1 and 2 are cross-sectional views of the manufacturing equipment used to carry out the method of the present invention, Figure 3 is a diagram showing the relationship between target temperature and discharge current, and Figure 4 is a diagram showing the relationship between target temperature and discharge current. FIG. 1 unit (1)...Vacuum chamber (4)...Group GG
-1lT203 SnO2-based oxide ■...He -
Ta (+5+...get heat (IiJ"099'10) Hisashi #F (Tari υ 10L Riki V ↓ Guest
Claims (1)
明導電膜を、Ｉｎ＿２Ｏ＿３−ＳｎＯ＿２系酸化物ター
ゲットを用いたスパッタ法により作成する方法において
、該ターゲットを１００℃以上に加熱し乍らスパッタを
行なうことを特徴とする透明導電膜の製造方法。 ２、真空室内に、基板とＩｎ＿２Ｏ＿３−ＳｎＯ＿２系
酸化物ターゲットとを互に対向して設け、該基板と該タ
ーゲット間に生ずるプラズマ放電により該基板にＩｎ＿
１＿−＿ｘＳｎｘ酸化物系（０≦ｘ≦１）透明導電膜を
形成するようにしたものに於て、該ターゲットの表面を
１００℃以上に加熱するヒータを設けたことを特徴とす
る透明導電膜の製造装置。 ３、真空室内に、基板とＩｎ＿２Ｏ＿３−ＳｎＯ＿２系
酸化物ターゲットとを互に対向して設け、該基板と該タ
ーゲット間に生ずるプラズマ放電により該基板にＩｎ＿
１＿−＿ｘＳｎｘ酸化物系（０≦ｘ≦１）透明導電膜を
形成するようにしたものに於て、ターゲットの背面から
該ターゲットを１００℃以上に加熱する熱媒体による加
熱装置を設けたことを特徴とする透明導電膜の製造装置
。[Claims] 1. In a method for producing an In_1_-_xSnx oxide-based (0≦x≦1) transparent conductive film by sputtering using an In_2O_3-SnO_2-based oxide target, the target is heated at 100°C or above. 1. A method for producing a transparent conductive film, which comprises performing sputtering while heating the film. 2. A substrate and an In_2O_3-SnO_2-based oxide target are provided facing each other in a vacuum chamber, and In_
1_-_xSnx oxide-based (0≦x≦1) transparent conductive film, which is characterized in that it is equipped with a heater that heats the surface of the target to 100°C or higher. manufacturing equipment. 3. A substrate and an In_2O_3-SnO_2-based oxide target are provided facing each other in a vacuum chamber, and In_
1_-_xSnx oxide-based (0≦x≦1) transparent conductive film is formed, and a heating device using a heat medium is provided to heat the target to 100°C or higher from the back side of the target. Characteristic transparent conductive film manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63198882A JPH0751745B2 (en) | 1988-08-11 | 1988-08-11 | Method for producing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63198882A JPH0751745B2 (en) | 1988-08-11 | 1988-08-11 | Method for producing transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0250951A true JPH0250951A (en) | 1990-02-20 |
| JPH0751745B2 JPH0751745B2 (en) | 1995-06-05 |
Family
ID=16398496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63198882A Expired - Fee Related JPH0751745B2 (en) | 1988-08-11 | 1988-08-11 | Method for producing transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0751745B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100101937A1 (en) * | 2008-10-29 | 2010-04-29 | Applied Vacuum Coating Technologies Co., Ltd. | Method of fabricating transparent conductive film |
| JP2011119720A (en) * | 2009-11-06 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | Semiconductor element, method of manufacturing semiconductor device, and film-forming apparatus |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5338269A (en) * | 1976-09-20 | 1978-04-08 | Nippon Precision Circuits | Input*output protecting circuit of mos ic |
| JPS5621308A (en) * | 1979-07-23 | 1981-02-27 | Spin Physics Inc | Method and apparatus for forming magnetic film on substrate by sputtering magnetic subtance |
| JPS6147645A (en) * | 1984-08-15 | 1986-03-08 | Toshiba Corp | Formation of thin film |
| JPS6293804A (en) * | 1985-10-18 | 1987-04-30 | ティーディーケイ株式会社 | Transparent conductor film and formation of the same |
| JPS62186417A (en) * | 1986-02-10 | 1987-08-14 | 日本板硝子株式会社 | Manufacture of transparent conductive film |
| JPS63162864A (en) * | 1986-12-26 | 1988-07-06 | Matsushita Electric Ind Co Ltd | Sputtering device |
| JPH01132760A (en) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | Method and device for forming film by sputtering |
-
1988
- 1988-08-11 JP JP63198882A patent/JPH0751745B2/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5338269A (en) * | 1976-09-20 | 1978-04-08 | Nippon Precision Circuits | Input*output protecting circuit of mos ic |
| JPS5621308A (en) * | 1979-07-23 | 1981-02-27 | Spin Physics Inc | Method and apparatus for forming magnetic film on substrate by sputtering magnetic subtance |
| JPS6147645A (en) * | 1984-08-15 | 1986-03-08 | Toshiba Corp | Formation of thin film |
| JPS6293804A (en) * | 1985-10-18 | 1987-04-30 | ティーディーケイ株式会社 | Transparent conductor film and formation of the same |
| JPS62186417A (en) * | 1986-02-10 | 1987-08-14 | 日本板硝子株式会社 | Manufacture of transparent conductive film |
| JPS63162864A (en) * | 1986-12-26 | 1988-07-06 | Matsushita Electric Ind Co Ltd | Sputtering device |
| JPH01132760A (en) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | Method and device for forming film by sputtering |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100101937A1 (en) * | 2008-10-29 | 2010-04-29 | Applied Vacuum Coating Technologies Co., Ltd. | Method of fabricating transparent conductive film |
| JP2011119720A (en) * | 2009-11-06 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | Semiconductor element, method of manufacturing semiconductor device, and film-forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0751745B2 (en) | 1995-06-05 |
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