JPH0244872A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH0244872A JPH0244872A JP63194522A JP19452288A JPH0244872A JP H0244872 A JPH0244872 A JP H0244872A JP 63194522 A JP63194522 A JP 63194522A JP 19452288 A JP19452288 A JP 19452288A JP H0244872 A JPH0244872 A JP H0244872A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- solid
- voltage
- ccd
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の目的)
(産業上の利用分野〉
この本発明は画像を電気信号に変換する固体撮像装置に
関するものである。Detailed Description of the Invention (Object of the Invention) (Industrial Application Field) The present invention relates to a solid-state imaging device that converts an image into an electrical signal.
(従来の技術)
従来の固体@像装置(以下銀像装置と称ず。)の構成を
第3図に示す。光学系を通して入力した画像は固体撮像
素子(以下撮像素子と称す。)で電気信号は変換され、
撮像素子からの出力はその後、所定の信号処理を経て影
像信号となる。(Prior Art) The configuration of a conventional solid-state @image device (hereinafter referred to as a silver image device) is shown in FIG. The image input through the optical system is converted into an electrical signal by a solid-state image sensor (hereinafter referred to as an image sensor).
The output from the image sensor then undergoes predetermined signal processing to become an image signal.
この時、撮像素子は長時間の動作、及び周囲温度により
撮像素子自体の温度が上昇する。この温度上昇により撮
像素子で発生する暗電流、固定パターンノイズによる雑
音か著しく増加し、画質を劣化させる。このため従来、
撮像素子の周辺に温度センサーを設け、ここで検出され
る湿度が撮像素子で発生ずる雑音が画質に対して問題と
ならない基準温度以上になった場合に踊像素子を冷却す
ることにより、必要とする画質を実現していた。At this time, the temperature of the image sensor itself increases due to long-time operation and ambient temperature. This temperature rise significantly increases noise due to dark current and fixed pattern noise generated in the image sensor, degrading image quality. For this reason, conventionally,
A temperature sensor is installed around the image sensor, and when the humidity detected by the sensor exceeds a reference temperature at which the noise generated by the image sensor does not pose a problem to the image quality, the image sensor is cooled down. The image quality achieved was as follows.
この場合、温度センサーか実際の撮像素子のチップ上に
配置されていないため、撮像素子自体の動作状態にお(
プる温度を検出してはいない。In this case, since the temperature sensor is not placed on the actual image sensor chip, the operating state of the image sensor itself cannot be affected.
The temperature is not detected.
この温度セン1)−−か検知する温度は銀像装置全体の
平均的な温度を検知している。一方、撮像素子自体の温
度は撮像素子自体で発生ずる熱の他に近接する駆動回路
及び仙の回路での発熱等の影響を受けるため温度センサ
ーで検出される温度とは異なる。このため温度センサー
の配置する位置、及び動作させる外部環境等により温度
センサーでの検出温度と実際の撮像素子自体の温度が著
しく異なる場合があり、常に一定の画質が得られないと
いう問題点がある。The temperature detected by this temperature sensor 1) detects the average temperature of the entire silver image device. On the other hand, the temperature of the image sensor itself differs from the temperature detected by the temperature sensor because it is affected by heat generated by the image sensor itself as well as heat generated by the nearby drive circuit and other circuits. For this reason, the temperature detected by the temperature sensor and the actual temperature of the image sensor itself may differ significantly depending on the location of the temperature sensor and the external environment in which it is operated, resulting in the problem that constant image quality cannot always be obtained. .
(発明が解決しようとする課題)
従来の技術では撮像素子自体の温度検出を行なっていな
いため撮像装置内での温度センサーの配置位置及び動作
時の外部環境により、温度センサーの検出温度と実際の
撮像素子自体の温度が著しく異なる場合があり、この検
出温度で制御する冷却では常に一定の画質か得られない
という問題点がある。(Problems to be Solved by the Invention) Conventional technology does not detect the temperature of the image sensor itself, so the temperature detected by the temperature sensor and the actual temperature may vary depending on the location of the temperature sensor within the image sensor and the external environment during operation. The temperature of the image sensor itself may vary significantly, and cooling controlled using this detected temperature has the problem that a constant image quality cannot always be obtained.
本発明では撮像素子チップ上に温度検出部を設けており
、この検出温度で制御して撮像素子の冷却を行なうため
、いかなる動作状況においても撮像素子の温度を一定に
保ち雑音を一定以下に抑えることが可能でおる。これに
より常に一定の良好な画質の映像信号を得る固体撮像装
置を1:?供することを目的とする。In the present invention, a temperature detection section is provided on the image sensor chip, and the detected temperature is used to control and cool the image sensor. Therefore, the temperature of the image sensor is kept constant under any operating conditions, and noise is kept below a certain level. It is possible. This enables a solid-state imaging device that always obtains a video signal of constant good image quality. The purpose is to provide
(課題を解決するための手段)
本発明は瞳像素子のチップ上に設りた温度検出手段と、
この温度検出手段の出力信号に応じて撮像素子の温度を
制御する冷却手段を具備する固体撮像装置を提供する。(Means for Solving the Problem) The present invention includes a temperature detection means provided on a chip of a pupil image element,
A solid-state imaging device is provided that includes a cooling means for controlling the temperature of an imaging element according to an output signal of the temperature detection means.
(作 用)
本発明を構成する撮像素子のデツプ上に設けた温度検出
手段はいかなる状況においても撮像素子自体の温度を検
出する。(Function) The temperature detection means provided on the depth of the image sensor constituting the present invention detects the temperature of the image sensor itself under any circumstances.
もう一つの構成要素でおる冷却手段においては温度検出
手段の出力に応じて撮像素子を冷却し、撮像素子の温度
を一定温度以下に保つ。The cooling means, which is another component, cools the image sensor according to the output of the temperature detection means, and keeps the temperature of the image sensor below a certain temperature.
(実施例)
第1の実施例
本発明の一実施例を第1図に示す。ここではCCD型固
体撮像素子(以下CCDと称す。)について説明する。(Embodiments) First Embodiment An embodiment of the present invention is shown in FIG. Here, a CCD type solid-state image sensor (hereinafter referred to as CCD) will be explained.
光学系1を通してC0D2に入力される画像はC0D2
において電気信号に変換され出力される。The image input to C0D2 through optical system 1 is C0D2
It is converted into an electrical signal and output.
ここで出力された信号は信号処理回路4に送られると同
時にLPF5に入力される。l PF5に入力された信
号はCOD出力に含まれる水平転送周波数成分を除去し
た後、OB(オプティカルブラック)部サンプルホール
ド回路6とCCD2の受光フォトダイオード信号が出力
されない空送り部分をサンプルホールドする空送り部サ
ンプルホールド回路7に別々に人力し、oB部部サンプ
ルオールド出力遅延し、空送り部サンプルオールド出力
と位相を合わせた後、空送り部OB部出力より減算する
。ここで得られる出力差電圧は大部分が受光フォトダイ
オードで発生する暗電流成分であり、温度依存性かある
。The signal output here is sent to the signal processing circuit 4 and simultaneously input to the LPF 5. l After removing the horizontal transfer frequency component included in the COD output, the signal input to the PF5 is transferred to the OB (optical black) section sample and hold circuit 6 and the empty section that samples and holds the empty feed portion where the light receiving photodiode signal of the CCD2 is not output. The sample and hold circuit 7 of the sending section is separately inputted, the oB section sample old output is delayed, and the phase is matched with the sample old output of the empty feeding section, and then subtracted from the output of the empty feeding section OB section. The output difference voltage obtained here is mostly a dark current component generated in the light-receiving photodiode, and is temperature dependent.
この性質を利用してCCD2を十分な画質を確保して動
作させることができる温度に対応する電圧を基準電圧に
設定する。Utilizing this property, a voltage corresponding to a temperature at which the CCD 2 can be operated with sufficient image quality is set as the reference voltage.
そして得られた差電圧と基準電圧とをコンパレータ9て
比較し差電圧が基準電圧よりも大きい場合には冷却装置
3の冷却装置の冷却を強めるように制御し、差電圧が基
準電圧以下の場合には一定の電圧を保つように冷却装置
3を制御する。Then, the obtained differential voltage and the reference voltage are compared with the comparator 9, and if the differential voltage is larger than the reference voltage, the cooling of the cooling device 3 is controlled to be strengthened, and if the differential voltage is below the reference voltage, the cooling device is controlled to be strengthened. The cooling device 3 is controlled to maintain a constant voltage.
このようにすることによりCCD2を常に一定温度に保
つことにより安定した良質な映像を1qることができる
。By doing this, by keeping the CCD 2 at a constant temperature, it is possible to produce 1 q of stable, high-quality images.
本実施例ではCCD型固体撮像素子について説明したか
、MO3型固体陥像素子、CPD型固体撮像素子に適用
することもできる。In this embodiment, a CCD type solid-state image pickup device has been described, but the present invention can also be applied to an MO3 type solid-state image pickup device or a CPD type solid-state image pickup device.
第2の実施例
本発明の他の一実施例を第2図に示づ。ここではCCD
型固体撮像素子(以下CCDと称づ−0)について説明
する。Second Embodiment Another embodiment of the present invention is shown in FIG. Here, CCD
A type solid-state image sensor (hereinafter referred to as CCD-0) will be explained.
光学系より入力された画像はCCD 12において電気
信号に変換され、信号処理回路14を経て映像信号とな
る。An image input from the optical system is converted into an electric signal by the CCD 12, and then passed through the signal processing circuit 14 to become a video signal.
一定CCD12チップ上に撮像素子CCD 12とは別
にPm接合を形成する。このPm接合に定電流を流して
おき、Pm接合の電圧を検知する。この電圧は温度依存
性がある。従ってこの検出電圧変化により温度変化を検
出する。この性質を利用してCCD12で十分な画質が
確保できる温度に対応する基準電圧と設定する。以下実
施例1と同様にPm接合で検出した電圧と基準電圧との
比較をコンパレータ16で行ない、その結果検出電圧か
基準電圧よりも大きい場合には冷却装置の冷却を強める
制御を行ない、検出電圧が基準電圧以下の場合には一定
の温度を保つように冷却装置を制御する。A Pm junction is formed on a certain CCD 12 chip separately from the image sensor CCD 12. A constant current is passed through this Pm junction, and the voltage of the Pm junction is detected. This voltage is temperature dependent. Therefore, a temperature change is detected by this detection voltage change. Utilizing this property, the reference voltage is set to correspond to a temperature at which sufficient image quality can be ensured by the CCD 12. Thereafter, as in Example 1, the voltage detected at the Pm junction is compared with the reference voltage by the comparator 16, and if the detected voltage is greater than the reference voltage, control is performed to strengthen the cooling of the cooling device, and the detected voltage is If the voltage is below the reference voltage, the cooling device is controlled to maintain a constant temperature.
本実施例ではCCD型固体眼像素子について説明したが
MO3型固体撮像素子、CPD型固体撮像素子に適用す
ることもできる。In this embodiment, a CCD type solid-state image sensor has been described, but the present invention can also be applied to an MO3 type solid-state image sensor or a CPD type solid-state image sensor.
(発明の効果〕
以上のように本発明によればCCDを常に一定の温度に
保ち、安定した良質の映像を得ることかできる。(Effects of the Invention) As described above, according to the present invention, it is possible to keep the CCD at a constant temperature and obtain stable, high-quality images.
第1図は本発明筒1の実施例を示ず図、第2図は第2の
実施例2を示す図、第3図は従来例を示ず図でおる。
1、11.21・・・光学系、
2.12・・・CCD。
22・・・撮像素子、
3、 13.23・・・冷却装置、
9、 16.26・・・コンパレータ、15・・・Pm
接合、
10、17・・・基準電圧設定回路、
代理人 弁理士 則 近 憲 佑
同 松山光之FIG. 1 does not show an embodiment of the cylinder 1 of the present invention, FIG. 2 shows a second embodiment 2, and FIG. 3 does not show a conventional example. 1, 11.21...Optical system, 2.12...CCD. 22...Image sensor, 3, 13.23...Cooling device, 9, 16.26...Comparator, 15...Pm
Junction, 10, 17...Reference voltage setting circuit, Agent: Patent attorney Noriyuki Chika, Yudo, Mitsuyuki Matsuyama
Claims (3)
、この温度検出手段の出力信号に応じて固体撮像素子の
温度を制御する冷却手段とを備えたことを特徴とする固
体撮像装置。(1) A solid-state imaging device comprising a temperature detection means provided on a chip of a solid-state imaging device, and a cooling means for controlling the temperature of the solid-state imaging device according to an output signal of the temperature detection means.
オプティカル部分を用いたことを特徴とする請求項1記
載の固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein the temperature detection means uses an optical portion that shields the light-receiving photodiode from light.
成したPm接合を用いたことを特徴とする請求項1記載
の固体撮像装置。(3) The solid-state imaging device according to claim 1, wherein the temperature detection means uses a Pm junction formed on the same chip as the solid-state imaging device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194522A JPH0244872A (en) | 1988-08-05 | 1988-08-05 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194522A JPH0244872A (en) | 1988-08-05 | 1988-08-05 | Solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0244872A true JPH0244872A (en) | 1990-02-14 |
Family
ID=16325932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63194522A Pending JPH0244872A (en) | 1988-08-05 | 1988-08-05 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0244872A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7671438B2 (en) | 2007-07-27 | 2010-03-02 | Panasonic Corporation | Solid-state imaging device |
-
1988
- 1988-08-05 JP JP63194522A patent/JPH0244872A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7671438B2 (en) | 2007-07-27 | 2010-03-02 | Panasonic Corporation | Solid-state imaging device |
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