JPH0244478A - Semiconductor storage cell - Google Patents

Semiconductor storage cell

Info

Publication number
JPH0244478A
JPH0244478A JP63196700A JP19670088A JPH0244478A JP H0244478 A JPH0244478 A JP H0244478A JP 63196700 A JP63196700 A JP 63196700A JP 19670088 A JP19670088 A JP 19670088A JP H0244478 A JPH0244478 A JP H0244478A
Authority
JP
Japan
Prior art keywords
pattern
magnification
data
circuit
graphic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63196700A
Other languages
Japanese (ja)
Inventor
Isamu Miura
勇 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63196700A priority Critical patent/JPH0244478A/en
Publication of JPH0244478A publication Critical patent/JPH0244478A/en
Pending legal-status Critical Current

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  • Image Processing (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce a load on hardware or software by providing a graphic magnification smoothing circuit to generate a fine dot pattern with an original dot pattern at the time of reading out a pattern for a magnification pattern request. CONSTITUTION:The data of an original pattern is stored in a data part 1. A readout part 2 is provided with a readout circuit 3 and the graphic magnification smoothing circuit 4, and the graphic magnification smoothing circuit 4 consists of a graphic magnification arithmetic circuit 5 and a graphic smoothing arithmetic circuit 6, and a magnification size signal line 7 is connected to the graphic magnification arithmetic circuit 5. The dot data 8 of the original pattern read out from the data part 1 is processed at the readout circuit 3 by the magnification arithmetic circuit 5 corresponding to magnification size designated by the magnification size signal line 7, and dot data 9 of magnification pattern is outputted. Dot data 10 of fine magnification pattern can be obtained by processing the data 9 by the graphic smoothing arithmetic circuit 6. In such a way, the load on the hardware or the software can be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体記憶素子に係シ、特に原パターンのドツ
トデータに対してより精細な拡大パターンのドツトデー
タ生成回路ブロックに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor memory device, and more particularly to a circuit block for generating dot data of an enlarged pattern that is more precise than dot data of an original pattern.

〔従来の技術〕[Conventional technology]

従来は、この種の拡大パターンのデータは、原パターン
のドツトデータを半導体記憶素子から読出した後に、別
途図形拡大演算を行って得ていた。
Conventionally, data for this type of enlarged pattern has been obtained by separately performing figure enlargement calculations after reading the dot data of the original pattern from a semiconductor memory element.

あるいは、図形拡大演算を行った後に、図形平滑化演算
を行って、精細な拡大パターンのドツトデータを得てい
る場合もあった。
Alternatively, after the figure enlargement operation is performed, the figure smoothing operation is sometimes performed to obtain dot data of a fine enlarged pattern.

〔発明が解決しようとする課題」 前述した従来の構成は、次のような欠点がある。[Problem that the invention attempts to solve] The conventional configuration described above has the following drawbacks.

ます、単純にそのまま原パターンを拡大した場合には、
解像度は原パターンのま1であり、とくに斜線部や曲線
部等ではキザギザのいわゆる階段状のパターンとなシ、
円滑性のない不自然なパターンとなる欠点があるうさら
に図形拡大演算のためにソフトウェアやハードウェア上
の負担が増大するという欠点がある。また、図形拡大演
算後に、図形平滑化演算を施す方法もあるが、この場合
には一層ン7トウエアやハードウェアが増大するという
欠点がある。
However, if you simply enlarge the original pattern,
The resolution is only the same as the original pattern, and especially in the diagonal lines and curved areas, the pattern is jagged and so-called stair-like.
This method has the drawback that it results in an unnatural pattern without smoothness, and furthermore, it has the drawback that the burden on software and hardware increases due to figure enlargement calculations. There is also a method of performing a figure smoothing operation after the figure enlarging operation, but this method has the disadvantage of further increasing the software and hardware.

さらに、別の方法として、同種のパターンに対して、粗
雑なものから精細なパターンまで用意する方法があるが
、多大な費用を要するという欠点がある。
Furthermore, as another method, there is a method of preparing patterns ranging from coarse to fine patterns for the same type of pattern, but this method has the drawback of requiring a large amount of cost.

本発明の目的は、前記欠点が解決され、ソフトウェアや
ハードウェア上の負担が増大せず、良好な拡大パターン
のドツトデータが得られるようにした半導体記憶素子を
提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor memory element that solves the above-mentioned drawbacks, does not increase the burden on software or hardware, and can obtain good enlarged pattern dot data.

〔課題を解決するだめの手段〕[Failure to solve the problem]

本発明の構成は、パターンデータをドツトデータとして
書込み及び読出しを行なう半導体記憶素子において、拡
大パターン要求に対するパターン読出し時に、原ドア)
パターンより精細なドツトパターンを発生せしめる図形
拡大平滑化回路を含むことを特徴とする。
The configuration of the present invention is such that in a semiconductor memory element in which pattern data is written and read as dot data, when a pattern is read in response to an enlarged pattern request,
It is characterized by including a graphic enlargement and smoothing circuit that generates a dot pattern that is finer than the pattern.

〔実施例〕〔Example〕

第1図は本発明の一実施例の半導体記憶素子内の回路ブ
ロックを示す回路図である。同図において、本実施例の
半導体記憶素子は、拡大パターンデータの読出しに関す
るデータ部1と読出し部2とを備えている。
FIG. 1 is a circuit diagram showing circuit blocks within a semiconductor memory element according to an embodiment of the present invention. In the figure, the semiconductor memory element of this embodiment includes a data section 1 and a readout section 2 for reading enlarged pattern data.

データ部1には、原パターンのデータが記憶されている
。読出し部2は、読出し回路3と図形拡大平滑化回路4
は図形拡大演算回路5と図形平滑化演算回路6とより構
成されておシ、この図形拡大演算回路5には拡大サイズ
信号線7が接続されている。
The data section 1 stores original pattern data. The readout section 2 includes a readout circuit 3 and a figure enlargement smoothing circuit 4.
is composed of a figure enlargement calculation circuit 5 and a figure smoothing calculation circuit 6, and an enlargement size signal line 7 is connected to this figure enlargement calculation circuit 5.

読出し回路3によシ、データ部1よシ読出された原パタ
ーンのドツトデータ8は、拡大ブイズ信号巌7の指定拡
大サイズに応じて、拡大演算回路5により処理されて、
拡大パターンのドツトデータ9を出力する。このデータ
9を図形平滑化演算回路6により処理して、梢細な拡大
パターンのド、トデータ10を得ることができる◇ 即ち、従来では半導体記憶素子の外部で行っていた拡大
パターン処理を、本実施例では半導体記憶素子内部で処
理をしている。
The dot data 8 of the original pattern read out by the reading circuit 3 and the data section 1 is processed by the enlargement calculation circuit 5 according to the specified enlargement size of the enlarged buzz signal 7.
Dot data 9 of the enlarged pattern is output. This data 9 can be processed by the graphic smoothing calculation circuit 6 to obtain dot data 10 of a finely enlarged pattern. In other words, the enlarged pattern processing, which was conventionally performed outside the semiconductor memory element, can now be In the embodiment, processing is performed inside the semiconductor memory element.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、半導体記憶素子のデー
タ続出し部に図形拡大平滑化回路を付加することによシ
、次の効果がある。
As explained above, the present invention has the following effects by adding a figure enlargement smoothing circuit to the data succession section of the semiconductor memory element.

まず、拡大された棺細なパターンが半導体記憶素子よQ
直接人手できるため、従来表示の際にパターン拡大平滑
化処理に安したハードウェアやソフトウェア上の負担を
軽減できる効果がある。
First, the enlarged narrow pattern looks like a semiconductor memory element.
Since it can be done directly by hand, it has the effect of reducing the burden on hardware and software, which was conventionally required for pattern enlargement and smoothing processing during display.

また、任意の拡大サイズのパターンのドツトデータを、
1つの原パターンのドツトデータから生成できるため、
同種のパターンについて多種類のドツトデータを用意す
る必要が無く、スペースや費用を節減できる効果がある
In addition, dot data of a pattern of any enlarged size can be
Since it can be generated from dot data of one original pattern,
There is no need to prepare many types of dot data for the same type of pattern, which has the effect of saving space and cost.

・ン·hmm

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の半導体記l素子のデータ続
出し部を示す回路ブロック図である。 1・・・・・・データ部、2・・・・・・読出し部、3
・・・・・・読出し回路、4・・・・・・図形拡大平滑
化回路、5・・・・・・図形拡大演算回路、6・・・・
・・図形平滑化演算回路、7・・・・・・拡大サイズ信
号線、8・・・・・・原パターンのドツトデータ、9・
・・・・・拡大パターンのドツトデータ、10・・・・
・・精細な拡大パターンのドツトデータ。 代理人 弁理士  内 原   晋
FIG. 1 is a circuit block diagram showing a data succession section of a semiconductor memory device according to an embodiment of the present invention. 1...Data section, 2...Reading section, 3
...Reading circuit, 4...Graphic enlargement smoothing circuit, 5...Graphic enlargement calculation circuit, 6...
...Figure smoothing calculation circuit, 7...Enlarged size signal line, 8...Dot data of original pattern, 9.
...Dot data of enlarged pattern, 10...
...Detailed enlarged pattern dot data. Agent Patent Attorney Susumu Uchihara

Claims (1)

【特許請求の範囲】[Claims] パターンデータをドットデータとして書込み及び読出し
を行なう半導体記憶素子において、拡大パターン要求に
対するパターン読出し時に、原ドットパターンより精細
なドットパターンを発生せしめる図形拡大平滑化回路を
含むことを特徴とする半導体記憶素子。
A semiconductor memory element for writing and reading pattern data as dot data, characterized in that the semiconductor memory element includes a figure enlargement smoothing circuit that generates a finer dot pattern than the original dot pattern when reading a pattern in response to an enlargement pattern request. .
JP63196700A 1988-08-05 1988-08-05 Semiconductor storage cell Pending JPH0244478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63196700A JPH0244478A (en) 1988-08-05 1988-08-05 Semiconductor storage cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63196700A JPH0244478A (en) 1988-08-05 1988-08-05 Semiconductor storage cell

Publications (1)

Publication Number Publication Date
JPH0244478A true JPH0244478A (en) 1990-02-14

Family

ID=16362133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63196700A Pending JPH0244478A (en) 1988-08-05 1988-08-05 Semiconductor storage cell

Country Status (1)

Country Link
JP (1) JPH0244478A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0687411A1 (en) 1994-06-14 1995-12-20 Senju Pharmaceutical Co., Ltd. Hepatic graft preservative composition and a method for viable preservation of the hepatic graft
US6277834B1 (en) 1998-06-19 2001-08-21 Senju Pharmaceutical Co. Ltd. Agents for relieving side effects of adrenal cortex hormone
US6387882B1 (en) 1997-12-24 2002-05-14 Senju Pharmaceutical Co., Ltd. Vitamin E derivatives

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0687411A1 (en) 1994-06-14 1995-12-20 Senju Pharmaceutical Co., Ltd. Hepatic graft preservative composition and a method for viable preservation of the hepatic graft
US6387882B1 (en) 1997-12-24 2002-05-14 Senju Pharmaceutical Co., Ltd. Vitamin E derivatives
US6277834B1 (en) 1998-06-19 2001-08-21 Senju Pharmaceutical Co. Ltd. Agents for relieving side effects of adrenal cortex hormone

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