JPH0242711A - Structure of lithography mask - Google Patents
Structure of lithography maskInfo
- Publication number
- JPH0242711A JPH0242711A JP63246652A JP24665288A JPH0242711A JP H0242711 A JPH0242711 A JP H0242711A JP 63246652 A JP63246652 A JP 63246652A JP 24665288 A JP24665288 A JP 24665288A JP H0242711 A JPH0242711 A JP H0242711A
- Authority
- JP
- Japan
- Prior art keywords
- support frame
- mask
- holding
- plane
- supporting frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001459 lithography Methods 0.000 title claims description 19
- 238000003860 storage Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＩＣ，ＬＳＩ等の半導体素子の製造用のリソグ
ラフィ用マスクの構造体に関し、特にリソグラフィ用マ
スクの保持膜を緊張貼付する環状支持枠の構成を特定す
ることにより、使用時及び収納保管時における損傷や歪
等を防止したリソグラフィ用マスクの構造体に関するも
のである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a structure of a lithography mask for manufacturing semiconductor devices such as ICs and LSIs, and in particular to an annular support frame to which a holding film of a lithography mask is attached under tension. The present invention relates to a lithography mask structure that prevents damage, distortion, etc. during use and storage by specifying the structure of the lithography mask.
（従来の技術）
最近、ＩＣ，ＬＳＩ等の半導体素子製造用の露光装置に
おいては半導体素子の高集積化に伴って、より高分解能
の焼付けが可能な例えば波長１人〜１５０人程度のＸ線
を利用した露光装置が種々と提案されている。(Prior Art) Recently, as semiconductor devices have become more highly integrated, exposure apparatuses for manufacturing semiconductor devices such as ICs and LSIs have become capable of printing with higher resolution, such as X-rays with wavelengths of 1 to 150. A variety of exposure apparatuses have been proposed.
このＸ線を利用した露光装置で使用されるリソグラフィ
用マスクは一般に環状の支持枠とその開口に緊張貼付し
たＸ線に対する透過部としての保持膜と非透過部として
のパターン部とを有する膜状体とから構成されている。A lithography mask used in an exposure apparatus using X-rays is generally a film-like mask having an annular support frame, a holding film as a transparent part for X-rays, and a pattern part as a non-transmissive part, which is tension-affixed to the opening of the ring-shaped support frame. It is composed of the body.
一般にリソグラフィ用マスクには次のような事項が要求
されている。Generally, the following requirements are required for lithography masks.
（イ）マスク基板の平坦性と均一性が良いこと。(a) The mask substrate must have good flatness and uniformity.
（０）温度に対する変形が少ないこと。(0) Less deformation due to temperature.
（ハ）物理的強度があること。(c) Must have physical strength.
特にＸ線用マスクはＸ線及びアライメント用の赤外光な
いし可視光に対する透過率を良好なものとするため、そ
の保持棒に緊張保持した薄膜を吸収体の保持膜として用
いている。この保持膜の厚さは有機材料膜（ポリイミド
など）の場合１〜２０μｍ、無機材料（ＳｉＮ、ＳｉＣ
など）の場合０．５〜５μｍであり、いずれの場合にも
一般には破損し易く取り扱いには注意を必要とする。In particular, in order to improve the transmittance of X-ray masks and infrared light or visible light for alignment, X-ray masks use a thin film held under tension by a holding rod as a holding film for the absorber. The thickness of this holding film is 1 to 20 μm in the case of organic material film (polyimide, etc.), and the thickness of inorganic material film (SiN, SiC).
etc.), it is 0.5 to 5 μm, and in either case, it is generally easy to break and requires care when handling.
サブミクロン程度を対象とした高解像度のマスクにあっ
てはマスク基板の平面度は０．３μｍ程度が必要とされ
ている。For high-resolution masks intended for submicron sizes, the flatness of the mask substrate is required to be approximately 0.3 μm.
又、露光装置におけるマスクの構造体にあっては環状支
持枠の基準面を露光装置の対応すべき面に密着せしめて
使用するために基準面の平面度は１μｍ以下、面粗さは
平均値で０．１μｍ以下等高精度なものが要求されてい
る。In addition, in the case of the structure of a mask in an exposure device, since the reference surface of the annular support frame is used in close contact with the corresponding surface of the exposure device, the flatness of the reference surface is 1 μm or less, and the surface roughness is an average value. High precision, such as 0.1 μm or less, is required.
従来よりリソグラフィ用マスクは板厚が２ｍｍ程度の石
英を用いていた為、マスク面を垂直にしてケースに収納
しても破損等に対してはあまり問題がなかった。これに
対してＸ線用マスクは垂直に収納すると支持枠の自重に
より歪が多くなり、又収納時の収箪により保持膜が破損
する等のおそれがあった。Conventionally, lithography masks have been made of quartz with a plate thickness of about 2 mm, so even if the masks were stored in a case with the mask surface vertical, there was no problem with damage. On the other hand, when the X-ray mask is stored vertically, the support frame becomes more distorted due to its own weight, and there is a risk that the holding film may be damaged due to the storage.
この他、支持枠の変形、保持膜の歪等によりＸ線用マス
クは使用時のみならず保管時にも膜面を水平にする必要
があり、特に保管用のケース等に収納する場合には外的
損傷を防止する為になるべく水平保持する必要があった
。In addition, due to deformation of the support frame, distortion of the holding membrane, etc., it is necessary to keep the membrane surface of the X-ray mask horizontal not only during use but also during storage, especially when storing it in a storage case. It was necessary to keep it as horizontal as possible to prevent damage.
しかしながらマスクを水平に容器に直接収納すると支持
枠の基準面にゴミや摩擦等によりすり傷がつき、平面度
及び面精度を著しく劣化してしまう等の問題点があった
。However, when a mask is directly stored horizontally in a container, the reference surface of the support frame is scratched by dirt, friction, etc., resulting in a significant deterioration in flatness and surface precision.
（発明が解決しようとする問題点）
本発明は環状の支持枠において、例えば露光装置に固定
する際に基準となる研磨された基準面以外の平面上の一
箇所を適切なる形状に構成することにより、マスクを水
平保持してもプロセス中及び保管時においても支持枠の
裏面の基準面が治具等に接触し、摩擦により傷が発生す
ることがなく、又基準面を高蹟度に維持することができ
、更に焼付装置に装架した際、基準面の歪による支持枠
が変形すること等のないリソグラフィ用マスクの構造体
の提供を目的とする。(Problems to be Solved by the Invention) The present invention provides an annular support frame in which, for example, a part on a plane other than a polished reference surface that is used as a reference when fixing to an exposure device is configured into an appropriate shape. As a result, even if the mask is held horizontally, the reference surface on the back of the support frame will not come into contact with jigs, etc. during the process or during storage, and scratches will not occur due to friction, and the reference surface will be maintained at a high level of rigidity. It is an object of the present invention to provide a structure of a lithography mask that can be used to print a photolithographic mask, and that also prevents the support frame from being deformed due to distortion of the reference plane when mounted on a printing apparatus.
（問題点を解決するための手段）
環状の支持枠上に転写パターンを形成した保持膜を緊張
貼付するようにしたリソグラフィ用マスクの構造体にお
いて、該環状の支持枠の基準面と異った平面上に該環状
の支持枠な保持する為の保持部を設けたことをである。(Means for solving the problem) In a structure of a lithography mask in which a holding film having a transfer pattern formed thereon is pasted under tension on an annular support frame, if the structure differs from the reference plane of the annular support frame, A holding portion for holding the annular support frame is provided on a plane.
特に本発明における保持部は前記環状の支持枠の内周部
、外周部又は基準面の少なくとも一領域に該環状の支持
枠の開口径と異なる開口径の円形又は多角形状の少なく
とも１つの開口部より構成されていることを特徴として
いる。In particular, the holding part in the present invention has at least one circular or polygonal opening having an opening diameter different from that of the annular support frame in at least one area of the inner circumference, outer circumference, or reference surface of the annular support frame. It is characterized by being composed of
（実施例）
第１図は本発明のリソグラフィ用マスクの構造体１０の
一実施例の断面図である。(Example) FIG. 1 is a sectional view of an example of a structure 10 of a lithography mask according to the present invention.
第１図において１は支持枠であり、円環形状をしており
、良好な熱伝導率を有する鉄、ニッケル、コバルト、黄
銅、タングステン、モリブテン等の金属、又はその合金
類、熱膨張率の低いパイレックスガラス、石英等より成
っている。そして支持枠１の外周端部には外周方向に傾
斜した傾斜部１ａか形成されている。又、支持枠１の環
状部の一領域は超平面に研磨された平面部７が形成され
ている。この平面部７により後述する緊張貼付する保持
膜２の平面度を決定している。In Fig. 1, reference numeral 1 denotes a support frame, which has an annular shape and is made of metals such as iron, nickel, cobalt, brass, tungsten, and molybdenum, which have good thermal conductivity, or their alloys, and which have a low coefficient of thermal expansion. Made of low Pyrex glass, quartz etc. An inclined portion 1a that is inclined in the outer circumferential direction is formed at the outer peripheral end of the support frame 1. Further, in one region of the annular portion of the support frame 1, a plane portion 7 is formed which is polished into a super plane. This flat portion 7 determines the flatness of the retaining film 2 to be applied under tension, which will be described later.
２は保持膜であり、例えばＸ線透過率の良いポリイミド
、ポリアミド、ポリエステル、パリレン等の有機薄膜や
窒化ホウ素、窒化シリコン、窒化アルミ、シリコンカー
バイト、チタン等の無機薄膜及び／又は複合膜等より成
っている。６はＸ線吸収体であり、保持膜２面上に所定
のパターンで形成されている。４は保持部であり、支持
枠１の基準面３と異った平面上の一部に環状の支持枠１
を保持する為に設けられている。2 is a holding film, such as an organic thin film such as polyimide, polyamide, polyester, or parylene with good X-ray transmittance, or an inorganic thin film and/or composite film such as boron nitride, silicon nitride, aluminum nitride, silicon carbide, titanium, etc. It consists of Reference numeral 6 denotes an X-ray absorber, which is formed in a predetermined pattern on the surface of the holding film 2. Reference numeral 4 denotes a holding part, in which a ring-shaped support frame 1 is attached to a part of the support frame 1 on a plane different from the reference plane 3.
It is designed to hold.
本実施例では保持部４は開口部より成り、環状支持体１
の内側に支持体１の開口部１ｂと異った開口径で段差状
に形成されている。そしてプロセス中、又は保管中には
開口部４の異径部分のみが、例えば第２図に示すように
治具８に保持されている。これにより研磨面より成る基
準面３が治具等他面と接触するのを防止している。In this embodiment, the holding part 4 consists of an opening, and the annular support 1
A stepped shape is formed on the inner side of the support body 1 with an opening diameter different from that of the opening 1b of the support body 1. During processing or storage, only the different diameter portions of the opening 4 are held by a jig 8, as shown in FIG. 2, for example. This prevents the reference surface 3, which is a polished surface, from coming into contact with other surfaces such as a jig.
本実施例において支持枠１と保持膜２の接着方法は、ま
ず保持膜２を支持枠１の平面部７及び傾斜部１ａ面上に
張カフ ｘ １０８ｄｙｎｅ／ｃｍ２程度で緊張し接触
加圧し、傾斜部１ａに塗布した接着剤５の硬化により行
なっている。In this embodiment, the method of adhering the support frame 1 and the retaining film 2 is as follows: First, the retaining film 2 is applied tension and contact pressure on the flat part 7 and the inclined part 1a of the support frame 1 with a tension of about 108 dyne/cm2, and then This is done by curing the adhesive 5 applied to the portion 1a.
本実施例で用いている接着剤５の材料としては、例えば
ゴム系、エポキシ系、エマルジョン系、アミン系、ポリ
イミド系等があり、熱硬化型、光硬化型、溶剤型等が使
用可能であり、特に剪断強度か大であり、かつ耐熱性の
良好な接着剤が好ましい。The material of the adhesive 5 used in this example includes, for example, rubber-based, epoxy-based, emulsion-based, amine-based, polyimide-based, etc., and thermosetting type, photocuring type, solvent type, etc. can be used. In particular, adhesives with high shear strength and good heat resistance are preferred.
本実施例においてリソグラフィ用マスクの保持のため、
支持枠１に設ける保持部４の形状は第１図に示すような
円形状に限るものでなく治具等に保持出来るものであれ
ば、４角形状、多角形状、楕円形状等どのような形状、
構造であっても良い。In this example, to hold the lithography mask,
The shape of the holding portion 4 provided on the support frame 1 is not limited to the circular shape as shown in FIG. 1, but may be any shape such as a quadrangular shape, a polygonal shape, an elliptical shape, etc. as long as it can be held in a jig etc. ,
It may be a structure.
例えば第３図に示すごとく支持枠１の内周面の一部に設
けた斜面を有する開口部や第４図に示すごとく内周面の
全面に設けた斜面を有する開口部、そして第５図に示す
ごとく内周面が曲面で形成される開口部であっても良い
。For example, as shown in FIG. 3, an opening with a slope formed on a part of the inner peripheral surface of the support frame 1, an opening with a slope formed on the entire inner peripheral surface as shown in FIG. 4, and FIG. The opening may have an inner circumferential surface formed as a curved surface as shown in FIG.
この他、保持部４を第６図に示すように支持枠１の外周
部の一部、又は全部を切欠いた切欠き部、又は円形状部
より構成しても良い。In addition, as shown in FIG. 6, the holding portion 4 may be formed of a notch or a circular portion obtained by cutting out part or all of the outer peripheral portion of the support frame 1.
又、第７図（Ａ）に示すように露光装置に用いた場合、
固定設置される際の研磨面より成る基準面３の一領域の
基準面３と異った平面上に保持部４を治具８の形状に合
わせて、例えば第７図（Ｂ）に示すように複数の開口部
４ａ〜４ｄより構成しても良い。Moreover, when used in an exposure device as shown in FIG. 7(A),
The holding part 4 is placed on a plane different from the reference surface 3 in a region of the reference surface 3 consisting of a polished surface when fixedly installed, in accordance with the shape of the jig 8, as shown in FIG. 7(B), for example. It may also be configured with a plurality of openings 4a to 4d.
本実施例に係る環状の支持枠１は円環に限るものでなく
、リソグラフィ用マスクとして使用できる。ものであれ
ば楕円、多角形など環状であればいずれの形状であって
も良い。The annular support frame 1 according to this embodiment is not limited to a circular ring, and can be used as a lithography mask. It may be any shape as long as it is annular, such as an ellipse or a polygon.
（発明の効果）
本発明によれば、前述の如くマスク等の環状の支持枠１
の例えば露光装置に固定設置する際の基準面とは異なる
平面上の少なくとも１ケ所に支持枠を保持するための保
持部４を設けることにより、ミクロン以下の微細パター
ンを転写するプロセス中、あるいはマスク保管中におい
てマスク支持枠の裏面の研磨面が治具等に接触すること
による傷の発生、及び傷の発生による面積度低下による
焼付装置装荷時の面の歪みから生ずる支持枠の変形を良
好に防いでいる。(Effects of the Invention) According to the present invention, as described above, the annular support frame 1 for a mask etc.
For example, by providing a holding part 4 for holding the support frame at at least one place on a plane different from the reference plane when fixedly installed in an exposure device, it is possible to use a mask during the process of transferring a fine pattern of less than a micron or Improves the deformation of the support frame caused by scratches caused by the polished surface on the back side of the mask support frame coming into contact with jigs, etc. during storage, and distortion of the surface when loading the printing device due to reduction in surface area due to scratches. Preventing.
又、従来のマスク環状支持体と比較して、少ない面積の
みを治具に接触したのみで保管できることからマスクの
環状支持枠の平行度、平面度を積度良く保つことができ
、さらにはマスク基板そのものの歪みを減少させ、平面
度のよいマスク基板を保つことかできる。In addition, compared to conventional mask annular supports, it is possible to store the mask with only a small area in contact with the jig, making it possible to maintain good parallelism and flatness of the mask annular support frame. It is possible to reduce distortion of the substrate itself and maintain a mask substrate with good flatness.
更に第２図や第７図（Ａ）に示すように保持部４を介し
てマスク等の支持体を治具に乗せたことで不意の外力に
よってマスクが治具からはずれた時にマスク基板を傷つ
ける、あるいは破る等の事柄も良好に防止したリソグラ
フィ用マスクの構造体を達成することができる。Furthermore, as shown in FIGS. 2 and 7(A), when a support such as a mask is placed on a jig via the holding part 4, the mask substrate may be damaged when the mask is detached from the jig due to an unexpected external force. It is possible to achieve a lithography mask structure that satisfactorily prevents problems such as breakage or breakage.
第１図は本発明の一実施例の概略図、第２図は本発明の
リソグラフィ用マスクの構造体を治具８に装着したとき
の一実施例の概略図、第３．第４図は各々本発明の他の
一実施例の概略図、第５図、第６図、第７図（Ａ） 、
（ＩＩ）は各々本発明の他の実施例の支持枠１を治具
８に装着したときの一実ｈ’ｅｓ例の概略図である。
図中、１０はリソグラフィ用マスクの構造体、１は支持
枠、２は保持１１Ｌ３は基準面、４は保持部、５は接着
剤、６はＸ線吸収体、７は平面部、８は治具である。1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a schematic diagram of an embodiment of the lithography mask structure of the present invention mounted on a jig 8, and 3. Fig. 4 is a schematic diagram of another embodiment of the present invention, Fig. 5, Fig. 6, Fig. 7 (A),
(II) is a schematic diagram of an actual example when the support frame 1 of other embodiments of the present invention is mounted on the jig 8. In the figure, 10 is the structure of the lithography mask, 1 is the support frame, 2 is the holder 11L3 is the reference plane, 4 is the holder, 5 is the adhesive, 6 is the X-ray absorber, 7 is the plane part, and 8 is the cure. It is a ingredient.
Claims (2)
を緊張貼付するようにしたリソグラフィ用マスクの構造
体において、該環状の支持枠の基準面と異った平面上に
該環状の支持枠を保持する為の保持部を設けたことを特
徴とするリソグラフィ用マスクの構造体。(1) In a lithography mask structure in which a holding film with a transfer pattern formed thereon is tension-affixed on an annular support frame, the annular support is placed on a plane different from the reference plane of the annular support frame. A structure of a lithography mask characterized by having a holding part for holding a frame.
又は基準面の少なくとも一領域に該環状の支持枠の開口
径と異なる開口径の円形又は多角形状の少なくとも１つ
の開口部より構成されていることを特徴とする請求項１
記載のリソグラフィ用マスクの構造体。(2) The holding portion has at least one circular or polygonal opening having an opening diameter different from that of the annular support frame in at least one area of the inner circumference, outer circumference, or reference surface of the annular support frame. Claim 1 comprising:
Structure of a lithography mask as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246652A JPH0242711A (en) | 1988-04-18 | 1988-09-30 | Structure of lithography mask |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-95322 | 1988-04-18 | ||
| JP9532288 | 1988-04-18 | ||
| JP63246652A JPH0242711A (en) | 1988-04-18 | 1988-09-30 | Structure of lithography mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0242711A true JPH0242711A (en) | 1990-02-13 |
Family
ID=26436569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63246652A Pending JPH0242711A (en) | 1988-04-18 | 1988-09-30 | Structure of lithography mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0242711A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994015777A1 (en) * | 1992-12-31 | 1994-07-21 | American Telephone And Telegraph Company | Lithographic mask, comprising a membrane having improved strength |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923104A (en) * | 1982-07-30 | 1984-02-06 | Kayaba Ind Co Ltd | Hydraulic pressure control device with combined regeneration and preferential operation |
| JPS6061750A (en) * | 1983-09-16 | 1985-04-09 | Nec Corp | Manufacture of x-ray exposure mask |
| JPS6153725A (en) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | Formation of mask for x-ray exposure |
| JPS6232463A (en) * | 1985-08-06 | 1987-02-12 | Canon Inc | Mask for exposure |
| JPS62133717A (en) * | 1985-12-06 | 1987-06-16 | Hitachi Ltd | X-ray mask and mask aligning apparatus with x-ray mask |
| JPS6473720A (en) * | 1987-09-16 | 1989-03-20 | Fujitsu Ltd | Manufacture of mask for x-ray exposure |
-
1988
- 1988-09-30 JP JP63246652A patent/JPH0242711A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923104A (en) * | 1982-07-30 | 1984-02-06 | Kayaba Ind Co Ltd | Hydraulic pressure control device with combined regeneration and preferential operation |
| JPS6061750A (en) * | 1983-09-16 | 1985-04-09 | Nec Corp | Manufacture of x-ray exposure mask |
| JPS6153725A (en) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | Formation of mask for x-ray exposure |
| JPS6232463A (en) * | 1985-08-06 | 1987-02-12 | Canon Inc | Mask for exposure |
| JPS62133717A (en) * | 1985-12-06 | 1987-06-16 | Hitachi Ltd | X-ray mask and mask aligning apparatus with x-ray mask |
| JPS6473720A (en) * | 1987-09-16 | 1989-03-20 | Fujitsu Ltd | Manufacture of mask for x-ray exposure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994015777A1 (en) * | 1992-12-31 | 1994-07-21 | American Telephone And Telegraph Company | Lithographic mask, comprising a membrane having improved strength |
| US5362575A (en) * | 1992-12-31 | 1994-11-08 | At&T Bell Laboratories | Lithographic mask, comprising a membrane having improved strength |
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