JPH0241936Y2 - - Google Patents
Info
- Publication number
- JPH0241936Y2 JPH0241936Y2 JP10192584U JP10192584U JPH0241936Y2 JP H0241936 Y2 JPH0241936 Y2 JP H0241936Y2 JP 10192584 U JP10192584 U JP 10192584U JP 10192584 U JP10192584 U JP 10192584U JP H0241936 Y2 JPH0241936 Y2 JP H0241936Y2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- input
- substrate
- ground terminal
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 238000010897 surface acoustic wave method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
この考案は表面弾性波装置（以下SAW装置と
略称する）の改良に関し、詳しくは、圧電体基板
の表面に設けた入出力用電極から導出した端子群
を並列配置するとともに、基板の裏面に付設した
シールド電極から導出したアース端子を、前記入
出力用端子群と並列に配置したSAW装置に関す
る。[Detailed description of the invention] [Field of industrial application] This invention relates to the improvement of a surface acoustic wave device (hereinafter abbreviated as a SAW device). The present invention relates to a SAW device in which a group of terminals are arranged in parallel, and a ground terminal led out from a shield electrode attached to the back side of a substrate is arranged in parallel with the group of input/output terminals.
第４図に従来の上記SAW装置の一例が示され、
ホウ珪酸ガラスからなる圧電体基板１の表面に
は、周知のように表面波励振用及び受信用の２組
のくし歯形電極対（図示せず）が付設されるとと
もに、これら電極対の表面が酸化亜鉛の圧電薄膜
２で被覆されている。又、圧電薄膜２の両側部に
はシリコンゴムからなるアブソーバ３，３が取付
けられている。基板１の両端には、入力側電極に
接続された一対の取出電極４，５及び出力側電極
に接続された一対の取出電極６，７が設けられ、
これらにハンダ付け接続された２組の端子８，
９，１０，１１がシングルインライン仕様に並列
導出されている。又、基板１の裏面全面にシール
ド電極１２が付設され、これに接続したアース端
子１３が前記各端子群の中央にシングルインライ
ン仕様で導出されている。そして、基板１及び各
端子群の基部がエポキシ樹脂などの絶縁性材料か
らなる保護層１４で全体的に被覆されている。
An example of the conventional SAW device described above is shown in FIG.
As is well known, two comb-shaped electrode pairs (not shown) for surface wave excitation and reception are attached to the surface of the piezoelectric substrate 1 made of borosilicate glass, and the surface of these electrode pairs is It is coated with a piezoelectric thin film 2 of zinc oxide. Further, absorbers 3, 3 made of silicone rubber are attached to both sides of the piezoelectric thin film 2. A pair of extraction electrodes 4, 5 connected to the input side electrode and a pair of extraction electrodes 6, 7 connected to the output side electrode are provided at both ends of the substrate 1,
Two sets of terminals 8 connected to these by soldering,
9, 10, and 11 are derived in parallel to a single inline specification. Further, a shield electrode 12 is attached to the entire back surface of the substrate 1, and a ground terminal 13 connected to the shield electrode 12 is led out in a single in-line manner at the center of each terminal group. The substrate 1 and the base of each terminal group are entirely covered with a protective layer 14 made of an insulating material such as epoxy resin.
上記従来構造においては、基板１の形状のバラ
ツキによつて入力側端子８，９と出力側端子１
０，１１との間に生じる直達波レベルにバラツキ
がみられた。
In the above conventional structure, due to variations in the shape of the board 1, the input terminals 8 and 9 and the output terminal 1
Variations were observed in the level of direct waves generated between 0 and 11.
つまり、基板１はウエハから所定寸法に切出さ
れるのであるが、ウエハの端部から切出された基
板には上下幅が一定しないものが多く、第５図イ
に示す標準寸法のものに対して、同図ロに示すよ
うに上方に広幅になつたものや、同図ハに示すよ
うに下方に広幅になつたもの、及び上下に広幅に
なつたもの（図示せず）ができる。そして、この
ように広幅の基板１に対しても裏面全面にシール
ド電極１２が形成される。 In other words, the substrate 1 is cut out from a wafer to a predetermined size, but many of the substrates cut from the edge of the wafer have uneven vertical widths, compared to those of the standard size shown in Figure 5A. As a result, there are those that are wider at the top as shown in Figure B, those that are wider at the bottom as shown in Figure C, and those that are wider at the top and bottom (not shown). The shield electrode 12 is formed on the entire back surface of the wide substrate 1 as described above.
この場合、ロのように上方に拡がつたものは、
入出力用端子８，９，１０，１１群とシールド電
極１２との関係は標準のものイと変わることがな
いが、ハのように下方に拡がつたものは、シール
ド電極１２が入出力用端子８，９，１０，１１群
の基部に標準のものイより大きく重複することに
なり、この重複量の差がシールド効果の差となつ
て、直達波のレベルに差異が生ずる。 In this case, the one that spreads upward like B is
The relationship between the input/output terminals 8, 9, 10, and 11 groups and the shield electrode 12 is the same as the standard one (a), but in the case of the one that extends downward as shown in (c), the shield electrode 12 is used for input/output. The bases of the groups of terminals 8, 9, 10, and 11 overlap to a greater extent than the standard one, and the difference in the amount of overlap results in a difference in shielding effectiveness, resulting in a difference in the level of direct waves.
この考案は、シールド電極に接続されるアース
電極に改良を加えることで、上記シールド効果の
差異を減少しようとしたものである。 This idea attempts to reduce the above-mentioned difference in shielding effect by improving the ground electrode connected to the shield electrode.
このために、本考案においては、アース端子の
基部を端子並列方向に広幅に、かつ、端子導出方
向にも広幅とし、このアース端子の広幅部分を基
板外において入出力用端子群の基部に対向配置す
る構成とした。
For this reason, in the present invention, the base of the ground terminal is made wide in the terminal parallel direction and also wide in the terminal lead-out direction, and the wide part of the ground terminal is placed outside the board facing the base of the input/output terminal group. The configuration was such that the
上記構成によると、基板自体が標準寸法のもの
より端子群導出側に拡がつてシールド電極と端子
群との重複量が変化したとしても、アース端子の
広幅部分と端子群との重複量には変化が少なく、
もしくは変化がなくなる。
According to the above configuration, even if the amount of overlap between the shield electrode and the terminal group changes as the board itself expands toward the lead-out side of the terminal group than the one with standard dimensions, the amount of overlap between the wide part of the ground terminal and the terminal group changes. There are few changes,
Or there will be no change.
第１図に本考案にかゝるSAW装置の表面側か
らの外観が、又、第２図に裏面側からの外観が
夫々示される。
FIG. 1 shows the appearance of the SAW device according to the present invention from the front side, and FIG. 2 shows the appearance from the back side.
このSAW装置は基本的構成は先に説明した従
来例と変わるところはなく、第４図に対応する部
分には同一の符号を記してある。 The basic structure of this SAW device is the same as that of the conventional example described above, and parts corresponding to those in FIG. 4 are designated by the same reference numerals.
本考案の特徴構成は、前記アース端子１３の基
部に、基板１の横幅と略同一の幅をもち、かつ、
上下にも広幅の広幅部１３ａを形成し、かつこの
広幅部１３ａを基板１の下端よりも下方に延出し
て、入出力用端子８，９，１０，１１群の基部に
対向重複させてある。 The characteristic configuration of the present invention is that the base of the ground terminal 13 has a width that is substantially the same as the width of the board 1, and
A wide wide portion 13a is also formed on the top and bottom, and this wide portion 13a extends downward from the lower end of the substrate 1 and overlaps with the base of the input/output terminals 8, 9, 10, and 11 groups. .
この構成によると、第３図に示すように、基板
１の上下幅が不均一で基板１裏面全面に設けたシ
ールド電極１２と入出力用端子８，９，１０，１
１群との重複量が変化しても、アース端子１３の
広幅部１３ａと端子８，９，１０，１１群との重
複量には変化がなく、シールド効果が均一にな
る。尚、アース端子１３の広幅部１３ａの上縁e1
は基板１に重複するのが望ましいが、多少の問隙
が生じてもよい。又、広幅部１３ａの下縁e2は基
板１の下端が最も下方に拡がり得る位置に設定し
ておけばよい。 According to this configuration, as shown in FIG. 3, the vertical width of the substrate 1 is uneven, and the shield electrode 12 and input/output terminals 8, 9, 10,
Even if the amount of overlap with the first group changes, the amount of overlap between the wide portion 13a of the ground terminal 13 and the groups of terminals 8, 9, 10, and 11 does not change, and the shielding effect becomes uniform. In addition, the upper edge e 1 of the wide part 13a of the ground terminal 13
Although it is desirable that these overlap with the substrate 1, some gaps may occur. Further, the lower edge e2 of the wide portion 13a may be set at a position where the lower end of the substrate 1 can expand downward most.
又、広幅部１３ａの上縁e1を基板１に重複させ
る場合には、アース端子１３のシールド電極１２
へのハンダ付け用突部１３ｂを省略して、広幅部
１３ａの上縁e1全長をシールド電極１２にハンダ
付け接続してもよい。 In addition, when the upper edge e 1 of the wide portion 13a overlaps the substrate 1, the shield electrode 12 of the ground terminal 13
The entire length of the upper edge e1 of the wide portion 13a may be connected to the shield electrode 12 by soldering, omitting the soldering protrusion 13b.
又、本考案は、入出力端子８，９，１０，１１
群をシングルインライン仕様に配列する場合のみ
ならず、干鳥状に配列するものにも適用できるも
のである。 In addition, the present invention provides input/output terminals 8, 9, 10, 11.
This can be applied not only to arranging groups in a single inline specification, but also to arranging them in a bird-like pattern.
以上説明したように、本考案は、基板裏面のシ
ールド電極に接続されるアース端子の基部に広幅
部を形成するだけの簡単な改造で、実質的なシー
ルド電極面を拡大し、基板の切出し形状の差異に
起因する入出力用端子群に対するシールド効果の
差異を吸収し、直達波のレベルのバラツキを十分
低減できた。
As explained above, the present invention expands the actual shield electrode surface by simply modifying the base of the ground terminal connected to the shield electrode on the back of the board, and expands the actual shield electrode surface. It was possible to absorb the difference in the shielding effect for the input/output terminal group due to the difference in the input and output terminals, and to sufficiently reduce the variation in the level of direct waves.
又、アース端子の広幅部と端子群との間に保護
層が入り込むことによつて保護層の保持がよくな
り、保護性能及び気密性の向上が図られる効果も
ある。 Furthermore, since the protective layer is inserted between the wide portion of the ground terminal and the terminal group, the protective layer is better retained, and there is also the effect that the protective performance and airtightness are improved.
第１図は本考案にかゝる表面弾性波装置の表面
側からの全体斜視図、第２図はその裏面側からの
斜視図、第３図イ，ロは裏面側から見た作用説明
図、第４図は従来例の表面側からの斜視図、第５
図イ，ロ，ハは従来例における裏面側から見た作
用説明図である。
１……圧電体基板、４，５，６，７……入出力
用電極、８，９，１０，１１……端子、１２……
シールド電極、１３……アース端子。
Fig. 1 is an overall perspective view of the surface acoustic wave device according to the present invention from the front side, Fig. 2 is a perspective view from the back side thereof, and Fig. 3 A and B are explanatory diagrams of the operation seen from the back side. , FIG. 4 is a perspective view of the conventional example from the front side, and FIG.
Figures A, B, and C are explanatory diagrams of the operation of the conventional example as seen from the back side. 1... Piezoelectric substrate, 4, 5, 6, 7... Input/output electrode, 8, 9, 10, 11... Terminal, 12...
Shield electrode, 13...earth terminal.
Claims (1)
導出した端子８，９，１０，１１群を並列配置す
るとともに、基板１の裏面に付設したシールド電
極１２から導出したアース端子１３を、前記入出
力用端子８，９，１０，１１群と並列配置した表
面弾性波装置において、 前記アース端子１３の基部を端子並列方向に広
幅に、かつ端子導出方向にも広幅とし、このアー
ス端子１３の広幅部１３ａを基板１外において入
出力用端子８，９，１０，１１群の基部に対向配
置してあることを特徴とする表面弾性波装置。[Claims for Utility Model Registration] Groups of terminals 8, 9, 10, and 11 led out from the input/output electrodes provided on the surface of the piezoelectric substrate 1 are arranged in parallel, and terminals 8, 9, 10, and 11 are arranged in parallel from the shield electrode 12 attached to the back surface of the substrate 1. In a surface acoustic wave device in which the lead-out ground terminal 13 is arranged in parallel with the input/output terminal groups 8, 9, 10, and 11, the base of the ground terminal 13 is widened in the terminal parallel direction and also in the terminal lead-out direction. A surface acoustic wave device characterized in that the ground terminal 13 has a wide width and a wide portion 13a of the ground terminal 13 is disposed outside the substrate 1 to face the base of the input/output terminals 8, 9, 10, and 11 groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10192584U JPS6118633U (en) | 1984-07-04 | 1984-07-04 | surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10192584U JPS6118633U (en) | 1984-07-04 | 1984-07-04 | surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6118633U JPS6118633U (en) | 1986-02-03 |
| JPH0241936Y2 true JPH0241936Y2 (en) | 1990-11-08 |
Family
ID=30661336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10192584U Granted JPS6118633U (en) | 1984-07-04 | 1984-07-04 | surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6118633U (en) |
-
1984
- 1984-07-04 JP JP10192584U patent/JPS6118633U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118633U (en) | 1986-02-03 |
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