JPH0240594A - Flap stage - Google Patents

Flap stage

Info

Publication number
JPH0240594A
JPH0240594A JP63191859A JP19185988A JPH0240594A JP H0240594 A JPH0240594 A JP H0240594A JP 63191859 A JP63191859 A JP 63191859A JP 19185988 A JP19185988 A JP 19185988A JP H0240594 A JPH0240594 A JP H0240594A
Authority
JP
Japan
Prior art keywords
displacement
hinge
stage
mask
hinges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63191859A
Other languages
Japanese (ja)
Inventor
Joji Iwata
岩田 譲治
Fumio Ono
文男 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC Engineering Ltd
Original Assignee
NEC Corp
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, NEC Engineering Ltd filed Critical NEC Corp
Priority to JP63191859A priority Critical patent/JPH0240594A/en
Publication of JPH0240594A publication Critical patent/JPH0240594A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q1/00Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members
    • B23Q1/25Movable or adjustable work or tool supports
    • B23Q1/26Movable or adjustable work or tool supports characterised by constructional features relating to the co-operation of relatively movable members; Means for preventing relative movement of such members
    • B23Q1/34Relative movement obtained by use of deformable elements, e.g. piezoelectric, magnetostrictive, elastic or thermally-dilatable elements
    • B23Q1/36Springs

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Details Of Measuring And Other Instruments (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To facilitate the control of a stage and to obtain a flap displacement of high resolution and high precision by providing three four-joint links formed integrally for supporting a plate. CONSTITUTION:When a voltage is applied to a piezoelectric element 8, a straight advancing displacement S thereby generated generates a displacement (t) in an output part 10 by a minute displacement link mechanism which is constructed of links of hinges 2 to 5, intermediate parts 9 and 11 and the output part 10 with a base 1 used as a fixed link. Moreover, the displacement (t) is transmitted as a flap displacement to a flap plate 13 through the intermediary of a columnar hinge 12. When a distance between the hinge 2 and the hinge 5 is set to be (m) and a distance between the hinge 4 and the hinge 5 to be l in the link mechanism, the displacement (t) in the output part 10 is t=(l/m)S.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はあおりステージ、特にX線露光装置のマスクス
テージやウェハステージに適用可能な薄型、高分解能、
高剛性のあおりステージに関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention is a thin, high-resolution,
Regarding a highly rigid tilting stage.

〔技術環境〕[Technological environment]

近年の半導体製造用露光装置は高精度化する傾向にある
。特にX線露光装置は、マスクとウェハを10μm〜5
0μmの微小なギャップを介して平行に保持し、位置合
わせマークを用いて0.1μm以下の微小位置合わせを
行って、0.5μm以下の微細パタンを転写するもので
あり、最近特に注目されている。X線マスクを保持する
マスクステージやウェハを保持するウェハステージには
、マスクとウェハの平行だしをするために薄型で、かつ
高分解能、高剛性のあおりステージが必要となっている
In recent years, there has been a trend toward higher precision in exposure apparatuses for semiconductor manufacturing. In particular, X-ray exposure equipment can handle masks and wafers with a thickness of 10 μm to 5 μm.
It is a method that transfers fine patterns of 0.5 μm or less by holding them parallel to each other through a minute gap of 0 μm and using alignment marks to perform fine alignment of 0.1 μm or less, and has recently received particular attention. There is. The mask stage that holds the X-ray mask and the wafer stage that holds the wafer require a thin, high-resolution, and highly rigid tilting stage to align the mask and wafer in parallel.

〔従来の技術〕[Conventional technology]

従来の技術としては、例えば特開昭61−904320
の従来例に示されているあおりステージがある。
As a conventional technique, for example, Japanese Patent Application Laid-Open No. 61-904320
There is a tilt stage shown in the conventional example.

この従来のあおりステージについて図面を参照して説明
する。
This conventional tilting stage will be explained with reference to the drawings.

第5図は従来のあおりステージを備えたX線露光装置の
マスクステージを示す平面図、第6図は第5図の正断面
図である。
FIG. 5 is a plan view showing a mask stage of an X-ray exposure apparatus equipped with a conventional tilting stage, and FIG. 6 is a front sectional view of FIG. 5.

従来のあおりステージは、中空円柱状のステージベース
114と、ステージベース114の内側に外周を固定さ
れた中空円板バネ115と、中空円板バネ115の内周
に固定されたマスクチャック取付枠113と、マスクチ
ャック取付枠113に保持されたマスクチャック102
と、マスクチャック取付枠113の上面に等角度配置し
たアマチャ109〜112と、アマチャ109〜112
に対向し、ステージベース114に取付けられた電磁石
105〜108とを含んで構成される。
The conventional tilting stage includes a hollow cylindrical stage base 114, a hollow disc spring 115 whose outer periphery is fixed to the inside of the stage base 114, and a mask chuck mounting frame 113 fixed to the inner periphery of the hollow disc spring 115. and the mask chuck 102 held by the mask chuck mounting frame 113.
, armatures 109 to 112 arranged equiangularly on the upper surface of the mask chuck mounting frame 113, and armatures 109 to 112.
Electromagnets 105 to 108 are mounted on the stage base 114 and facing the stage base 114.

電磁石105に正の電流、電磁石107に負の電流を流
すと、電磁石105とアマチャ109には吸引力、電磁
石107とアマチャ111には反発力が発生し、中空円
板バネの拘束力とつり合った姿勢、つまりアマチャ11
1が取付いているマスクチャック取付枠113は矢印F
方向にあおり変位する。
When a positive current flows through the electromagnet 105 and a negative current flows through the electromagnet 107, an attractive force is generated between the electromagnet 105 and the armature 109, and a repulsive force is generated between the electromagnet 107 and the armature 111, which balances the restraining force of the hollow disc spring. posture, that is, amateur 11
The mask chuck mounting frame 113 to which 1 is attached is indicated by arrow F.
It is tilted and displaced in the direction.

さらに電磁石105〜108に同じ大きさの電流を流す
ことによってZ方向に変位させることができる。したが
ってマスクチャック取付枠113にマスクチャック10
2を介して保持されたマスク11をウェハ12に対して
平行でかつ所定のギャップ量に位置決めすることができ
る。
Further, by passing currents of the same magnitude through the electromagnets 105 to 108, they can be displaced in the Z direction. Therefore, the mask chuck 10 is attached to the mask chuck mounting frame 113.
The mask 11 held through the wafer 2 can be positioned parallel to the wafer 12 and at a predetermined gap amount.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のあおりステージはマスク11にあおり変
位および、Z方向変位を与える場合、中空円板バネ11
5外周と内周をそれぞれステージベース114とマスク
チャック取付枠113に固定されているので複雑な変形
をして、電磁石105〜108に流す電流を複雑に制御
しなければならず、ウェハ12とマスク11を平行に位
置合わせするのに多くの時間を要する。
When the conventional tilting stage described above applies tilting displacement and Z direction displacement to the mask 11, the hollow disk spring 11
5. Since the outer and inner circumferences of the wafer 12 and the mask are fixed to the stage base 114 and the mask chuck mounting frame 113, the wafer 12 and the mask must undergo complicated deformation and control the current flowing through the electromagnets 105 to 108 in a complicated manner. 11 in parallel takes a lot of time.

またX線露光装置の場合、特開昭60−201344な
どに記載されるように、マスク11とウェハ12の位置
ズレ検出装置をマスク3の上面でかつ露光領域の近傍に
配置する必要があり、薄型構造でなければならないが、
電磁石を設けると、薄型に構成しにくいという欠点があ
った。
In addition, in the case of an X-ray exposure apparatus, as described in Japanese Patent Laid-Open No. 60-201344, it is necessary to place a positional deviation detection device between the mask 11 and the wafer 12 on the upper surface of the mask 3 and near the exposure area. Although it must have a thin structure,
Providing an electromagnet has the disadvantage that it is difficult to construct a thin structure.

さらに、電磁石が発生しうる力は小さいので安定したあ
おり変位を得るために中空円板バネにスリットを設けた
り、特開昭61−90432に記載されるように柱状の
弾性部材を用いる手段もあるが、電磁石で発生する力が
小さいためバネ定数を小さくしなければならずあおりス
テージ全体の剛性を高くできないので振動に対して弱い
という欠点があった。
Furthermore, since the force that can be generated by an electromagnet is small, in order to obtain stable tilting displacement, there are also methods such as providing a slit in a hollow disc spring or using a columnar elastic member as described in JP-A No. 61-90432. However, since the force generated by the electromagnet is small, the spring constant must be made small, and the rigidity of the entire tilting stage cannot be increased, making it vulnerable to vibration.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のあおりステージは、一端をベースプレートに固
定し第1〜第4の4個のヒンジを有する3個の4節リン
クと、一端をベースプレートに固定し他端を前記4節リ
ンクのもう一端部に固定した3個のピエゾ素子と、3個
の前記4節リンクの第2のヒンジと第3のヒンジの間に
はさまれた出力部に固定した3個の円柱ヒンジと、該3
個の円柱ヒンジに固定した1個のあおりプレートとを含
んで構成される。
The tilting stage of the present invention includes three four-bar links having one end fixed to a base plate and having four hinges, first to fourth, and one end fixed to the base plate and the other end of the four-bar link. three piezo elements fixed to the three piezo elements, three cylindrical hinges fixed to the output section sandwiched between the second and third hinges of the three four-bar links;
It is composed of one tilting plate fixed to two cylindrical hinges.

〔実施例〕〔Example〕

次に本発明の実施例について、図面を参照して詳細に説
明する。
Next, embodiments of the present invention will be described in detail with reference to the drawings.

第1図は本発明の一実施例の原理を示す断面図である。FIG. 1 is a sectional view showing the principle of an embodiment of the present invention.

第1図に示すあおりステージはベース1を固定部として
4個のヒンジ2,3,4.5を有した4節リンク6と、
第4のヒンジ5とベース1に両端を固定されたピエゾ素
子8と、第2のヒンジ3と第3のヒンジ4とではさまれ
た出力部10に固定した円柱ヒンジ12と、円柱ヒンジ
12に固定したあおりプレート13とを含んで構成され
る。
The tilting stage shown in FIG. 1 has a base 1 as a fixed part and a four-bar link 6 having four hinges 2, 3, 4.5,
A piezo element 8 whose both ends are fixed to the fourth hinge 5 and the base 1, a cylindrical hinge 12 fixed to the output part 10 sandwiched between the second hinge 3 and the third hinge 4, and a cylindrical hinge 12 It is configured to include a fixed tilting plate 13.

次に図面を参照して動作原理を説明してゆく。Next, the principle of operation will be explained with reference to the drawings.

ピエゾ素子8に電圧をかけると発生する直進変位Sは、
ベース1を固定リンクとしてヒンジ23.4.5及び、
中間部9.11及び、出力部10のリンクで構成する微
小変位リンク機構によって変位tを出力部10に発生し
、さらに円柱ヒンジ12を介してあおりプレート13に
あおり変位として伝達する。
The linear displacement S that occurs when a voltage is applied to the piezo element 8 is
Hinge 23.4.5 with base 1 as a fixed link;
A displacement t is generated in the output part 10 by a minute displacement link mechanism constituted by links between the intermediate part 9.11 and the output part 10, and is further transmitted as a tilt displacement to the tilt plate 13 via the cylindrical hinge 12.

リンク機構においてはヒンジ2とヒンジ5の距離をm、
ヒンジ4とヒンジ5の距離を とすると、出力部10の
変位tはt=(7m)Sとなる。
In the link mechanism, the distance between hinge 2 and hinge 5 is m,
If the distance between the hinge 4 and the hinge 5 is as follows, the displacement t of the output section 10 is t=(7m)S.

またリンク機構全体を一体で形成しているので、ピエゾ
素子8の微小変位をすべりやバックラッシュなく安定し
てあおりプレート13に伝達できる。
Furthermore, since the entire link mechanism is formed in one piece, minute displacements of the piezo element 8 can be stably transmitted to the tilting plate 13 without slipping or backlash.

第2図は本発明によるあおりステージを備えたX線露光
装置のマスクステージを示す平面図、第3図は第2図に
おいてXI−x2断面図、第4図は第3図を動作させた
ときの動作説明図である。
Fig. 2 is a plan view showing a mask stage of an X-ray exposure apparatus equipped with a tilting stage according to the present invention, Fig. 3 is a cross-sectional view taken along line XI-x2 in Fig. 2, and Fig. 4 is a view when Fig. 3 is operated. FIG.

第2図及び第3図に示すマスクステージ用あおりステー
ジは、第1図に原理を示したリンク機構をマスクステー
ジ(あおりプレート)13′の中心軸2に対して対称に
配置したもので、ベース1は一体で形成されていて中空
円板状である。
The mask stage tilting stage shown in FIGS. 2 and 3 has a link mechanism whose principle is shown in FIG. 1 is integrally formed and has a hollow disk shape.

4節リンク6a、6b、6cはそれぞれ4個のヒンジ2
aN5a、2b 〜5b、2c 〜5cを有し、3個の
ピエゾ素子8a、8b、8cは一端をベース1に固定さ
れ、もう一端をヒンジ5a、5b、5cにそれぞれ固定
されている。3個の4節リンク6a、6b、6cの出力
部10a、10b。
Each of the four-bar links 6a, 6b, and 6c has four hinges 2.
The three piezo elements 8a, 8b, 8c have one end fixed to the base 1, and the other end fixed to the hinges 5a, 5b, 5c, respectively. Output portions 10a, 10b of three four-bar links 6a, 6b, 6c.

10cは、それぞれ円柱ヒンジ12a、12b。10c are cylindrical hinges 12a and 12b, respectively.

12cを介してマスクチャック(あおりプレート)13
′を支持している。
Mask chuck (tilt plate) 13 via 12c
' is supported.

次に図面を参照しながら順に動作を説明する。Next, the operation will be explained in order with reference to the drawings.

第4図は第3図の断面図を動作させたときの動作説明図
である。
FIG. 4 is an explanatory diagram of the operation when the cross-sectional view of FIG. 3 is operated.

4節リンク6aに取りつけられているピエゾ素子8aに
電圧をかけると、直進変位Sを発生し、この直進変位S
は第1図の原理で示したように、4節リンク6aの出力
部10aに変位tを発生する。マスクチャック(あおり
プレート)13′は、出力部10a、10b、10cと
円柱ヒンジ12a、12b、12cによって角度自在に
連結されているので、1個の出力部10aの変位tによ
って、他の出力部10b、10cの干渉をうけずに独立
したあおり変位θを得ることができ、マスクチャック(
あおりプレート)13′に保持されたマスク21をウェ
ハと容易に平行に位置決めすることができる。
When voltage is applied to the piezo element 8a attached to the four-bar link 6a, a linear displacement S is generated, and this linear displacement S
generates a displacement t at the output portion 10a of the four-bar link 6a, as shown in the principle of FIG. The mask chuck (tilt plate) 13' is angularly connected to the output parts 10a, 10b, 10c by the cylindrical hinges 12a, 12b, 12c, so that the displacement t of one output part 10a causes the other output parts to move. It is possible to obtain independent tilting displacement θ without interference from 10b and 10c, and the mask chuck (
The mask 21 held by the tilting plate 13' can be easily positioned parallel to the wafer.

さらにピエゾ素子8a〜8Cに同電圧をくわえることに
より、同様にZ方向の変位だけを得ることができるので
、マスク21とウェハ22のギャップを所定の大きさに
位置決めすることができる。
Furthermore, by applying the same voltage to the piezo elements 8a to 8C, it is possible to similarly obtain displacement only in the Z direction, so that the gap between the mask 21 and the wafer 22 can be positioned to a predetermined size.

ピエゾ素子8a、8b、8cのストロークは、15μm
程度で、あおりステージに必要なストロークは50μm
程度であるので、ヒンジ間の距離は50/10=  7
mを満たすような寸法である。
The stroke of piezo elements 8a, 8b, 8c is 15 μm
The stroke required for the tilt stage is 50 μm.
The distance between the hinges is 50/10 = 7.
The dimensions are such that m is satisfied.

ピエゾ素子は100V程度の低電圧で駆動できる積層タ
イプであるなめ、小型で大応力を発生でき、又発熱もほ
とんど無視できるので、リンク機構を一体で形成するこ
とができ、ステージの剛性を大きくできる。
Since the piezo element is a laminated type that can be driven at a low voltage of about 100V, it is small and can generate large stress, and the heat generation can be almost ignored, so the link mechanism can be formed as one piece, increasing the rigidity of the stage. .

また、3個の4節リンクはワイヤカット放電加工で同時
製作できるので、ヒンジ部の寸法精度を管理し易くバネ
定数を均一に形成できるので、3個の4節リンクの運動
特性を均一にできる。
In addition, since the three four-bar links can be manufactured simultaneously using wire-cut electric discharge machining, the dimensional accuracy of the hinge part can be easily managed and the spring constant can be made uniform, so the motion characteristics of the three four-bar links can be made uniform. .

〔発明の効果〕〔Effect of the invention〕

本発明のあおりステージは、あおりプレートを支持する
ために中空円板や柱状弾性バネの代わりに、一体で形成
した3個の4節リンクを設けることにより、締結部がな
く、寸法精度よく形成できるため、すべりやガタがなく
高剛性に支持できる。
The tilting stage of the present invention has three integrally formed four-bar links instead of a hollow disk or a columnar elastic spring to support the tilting plate, so there is no fastening part and it can be formed with high dimensional accuracy. Therefore, it can be supported with high rigidity without slipping or rattling.

また、3個の4節リンクとあおりプレートの間に回転自
在な円柱ヒンジを設けることにより、3軸の3個の4節
リンクの変位による干渉変化がなくなるため、あおりス
テージの制御が容易になる。
In addition, by providing a rotatable cylindrical hinge between the three four-bar links and the tilting plate, there is no interference change due to displacement of the three four-bar links on the three axes, making it easier to control the tilting stage. .

また、電磁石の代わりにピエゾ素子を設けることにより
、発熱が小さく、大応力と微小変位を発生できるので、
高分解能で高精度のあおり変位を得られる。さらにピエ
ゾ素子を放射状に配置することにより、薄形構造にでき
るため、X線露光装置のマスクステージやウェハステー
ジを小型にできるという効果がある。
In addition, by providing a piezo element instead of an electromagnet, it generates less heat and can generate large stress and minute displacement.
High-resolution and highly accurate tilt displacement can be obtained. Furthermore, by arranging the piezo elements radially, a thin structure can be achieved, which has the effect that the mask stage and wafer stage of the X-ray exposure apparatus can be made smaller.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の原理を示す断面図、第2図
は本発明の一実施例を示す平面図、第3図は第2図の正
断面図、第4図は第3図を動作させた場合の動作説明図
、第5図は従来の一例を示す平面図、第6図は第5図の
正断面図である。 2.3,4.5・・・ヒンジ、2a、3a、4a。 5 a−−−ヒンジ、2b、3b、4b、5b・・・ヒ
ンジ、2c、3c、4c、5ic−・−ヒンジ、6.6
a、6b、6cm−・4節リンク、8.8a、8b、8
cmピエゾ素子、12.12a、12b、12cm 円
柱ヒンジ、13・・・あおりプレート、13′・・・マ
スクチャック。
Fig. 1 is a sectional view showing the principle of an embodiment of the present invention, Fig. 2 is a plan view showing an embodiment of the invention, Fig. 3 is a front sectional view of Fig. 2, and Fig. 4 is a sectional view of the third embodiment of the invention. FIG. 5 is a plan view showing a conventional example, and FIG. 6 is a front sectional view of FIG. 5. 2.3, 4.5... Hinge, 2a, 3a, 4a. 5 a---hinge, 2b, 3b, 4b, 5b...hinge, 2c, 3c, 4c, 5ic---hinge, 6.6
a, 6b, 6cm-・4 section link, 8.8a, 8b, 8
cm piezo element, 12.12a, 12b, 12cm cylindrical hinge, 13... tilting plate, 13'... mask chuck.

Claims (1)

【特許請求の範囲】[Claims] 一端をベースプレートに固定し第1〜第4の4個のヒン
ジを有する3個の4節リンクと、一端をベースプレート
に固定し他端を前記4節リンクのもう一端部に固定した
3個のピエゾ素子と、3個の前記4節リンクの第2のヒ
ンジと第3のヒンジの間にはさまれた出力部に固定した
3個の円柱ヒンジと、該3個の円柱ヒンジに固定した1
個のあおりプレートとを含むことを特徴とするあおりス
テージ。
three four-bar links having one end fixed to the base plate and having four hinges numbered first to fourth, and three piezos having one end fixed to the base plate and the other end fixed to the other end of the four-bar link. element, three cylindrical hinges fixed to the output part sandwiched between the second and third hinges of the three four-bar links, and one cylindrical hinge fixed to the three cylindrical hinges.
A tilt stage characterized by comprising a tilt plate and a tilt plate.
JP63191859A 1988-07-29 1988-07-29 Flap stage Pending JPH0240594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63191859A JPH0240594A (en) 1988-07-29 1988-07-29 Flap stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63191859A JPH0240594A (en) 1988-07-29 1988-07-29 Flap stage

Publications (1)

Publication Number Publication Date
JPH0240594A true JPH0240594A (en) 1990-02-09

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ID=16281690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63191859A Pending JPH0240594A (en) 1988-07-29 1988-07-29 Flap stage

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JP (1) JPH0240594A (en)

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JP2012182467A (en) * 2006-04-21 2012-09-20 Kla-Encor Corp Z stage with dynamically driven stage mirror and chuck assembly
CN102930904A (en) * 2012-10-10 2013-02-13 北京航空航天大学 Micro-motion platform for improving resolution of linear motor based on flexible inclined beam
CN103498756A (en) * 2013-09-17 2014-01-08 中国船舶重工集团公司第七一〇研究所 Device for interconversion between random motion and spatial linear motion
US9141002B2 (en) 2006-04-21 2015-09-22 Kla-Tencor Corporation Z-stage with dynamically driven stage mirror and chuck assembly having constraint
US10533251B2 (en) 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus

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JP2012182467A (en) * 2006-04-21 2012-09-20 Kla-Encor Corp Z stage with dynamically driven stage mirror and chuck assembly
JP2014007425A (en) * 2006-04-21 2014-01-16 Kla-Encor Corp Z stage with dynamically driven stage mirror and chuck assembly
US9141002B2 (en) 2006-04-21 2015-09-22 Kla-Tencor Corporation Z-stage with dynamically driven stage mirror and chuck assembly having constraint
JP2017010061A (en) * 2011-02-22 2017-01-12 株式会社ニコン Holding apparatus, exposure apparatus, and method for manufacturing device
US10416573B2 (en) 2011-02-22 2019-09-17 Nikon Corporation Holding apparatus, exposure apparatus and manufacturing method of device
US9746787B2 (en) 2011-02-22 2017-08-29 Nikon Corporation Holding apparatus, exposure apparatus and manufacturing method of device
JPWO2012115002A1 (en) * 2011-02-22 2014-07-07 株式会社ニコン Holding apparatus, exposure apparatus, and device manufacturing method
WO2012115002A1 (en) * 2011-02-22 2012-08-30 株式会社ニコン Holding device, exposure device and production method for device
CN102930904B (en) * 2012-10-10 2015-03-11 北京航空航天大学 Micro-motion platform for improving resolution of linear motor based on flexible inclined beam
CN102930904A (en) * 2012-10-10 2013-02-13 北京航空航天大学 Micro-motion platform for improving resolution of linear motor based on flexible inclined beam
CN103498756A (en) * 2013-09-17 2014-01-08 中国船舶重工集团公司第七一〇研究所 Device for interconversion between random motion and spatial linear motion
US10533251B2 (en) 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus
US11230765B2 (en) 2015-12-31 2022-01-25 Lam Research Corporation Actuator to adjust dynamically showerhead tilt in a semiconductor-processing apparatus

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