JPH0239524A - Manufacture of polycrystalline silicone thin film transistor - Google Patents
Manufacture of polycrystalline silicone thin film transistorInfo
- Publication number
- JPH0239524A JPH0239524A JP19079788A JP19079788A JPH0239524A JP H0239524 A JPH0239524 A JP H0239524A JP 19079788 A JP19079788 A JP 19079788A JP 19079788 A JP19079788 A JP 19079788A JP H0239524 A JPH0239524 A JP H0239524A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- thin film
- plasma
- organic compound
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920001296 polysiloxane Polymers 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 37
- 239000001257 hydrogen Substances 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 14
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000009832 plasma treatment Methods 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 125000004429 atom Chemical group 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract description 15
- 239000007789 gas Substances 0.000 abstract description 11
- 150000002500 ions Chemical class 0.000 abstract description 9
- 229910003460 diamond Inorganic materials 0.000 abstract description 5
- 239000010432 diamond Substances 0.000 abstract description 5
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 abstract description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- -1 methyl anions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は薄膜トランジスタ（ＴＰＴ）の製造方法に関し
、詳しくは、多結晶シリコンを用いた薄膜トランジスタ
製造で特定のプラズマ処理を施こすことによって、ＴＰ
Ｔ特性の改善をはかるとともにパッシベーション膜の成
膜をも行なうようにした新規な多結晶シリコン薄膜トラ
ンジスタの製造方法に関する。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for manufacturing a thin film transistor (TPT).
The present invention relates to a method for manufacturing a novel polycrystalline silicon thin film transistor, which improves T characteristics and also forms a passivation film.
センサ、液晶パネル、ＥＬパネルなどを駆動させるため
の薄膜トランジスタの研究が随所で盛んに行なわれてお
り、その特性（ＴＰＴ特性）の改善と並行して更に数多
くの技術分野への応用が期待されている。Research on thin film transistors for driving sensors, liquid crystal panels, EL panels, etc. is being actively conducted everywhere, and in parallel with improving their characteristics (TPT characteristics), it is expected that they will be applied to many more technical fields. There is.
ところで一般に、ポリシリコン（多結晶シリコン）を半
導体材料として製造されるＴＰＴのメリットは装置の大
面積化である。しかし、多結晶であるがために、ポリシ
リコン結晶粒界でダングリングボンドや結晶格子の乱れ
によるトラップ準位が存在することからキャリアの捕獲
が起こり、粒界に沿って障壁ポテンシャルが形成されキ
ャリア移動度（ａｄ／Ｖ’ｓ）が低下してしまうという
欠陥を有している。By the way, in general, the advantage of TPT manufactured using polysilicon (polycrystalline silicon) as a semiconductor material is that the device can have a large area. However, because it is polycrystalline, there are trap levels caused by dangling bonds and disordered crystal lattices at the polysilicon grain boundaries, which causes carrier capture, and a barrier potential is formed along the grain boundaries, causing carriers to be trapped. It has a defect that the mobility (ad/V's) decreases.
こうした欠陥を解消する対策としては、通常、ポリシリ
コン結晶粒界に水素原子を水素プラズマ処理によって導
入（水素処理）し、結晶格子の乱れを正しダングリング
ボンドの密度を低減させ、前記トラップ準位を小さくし
てキャリア移動度を向上させる方法が一般にとられてい
る。As a countermeasure to eliminate these defects, hydrogen atoms are usually introduced into the polysilicon grain boundaries by hydrogen plasma treatment (hydrogen treatment) to correct the disorder of the crystal lattice and reduce the density of dangling bonds. Generally, a method is used to improve carrier mobility by reducing the carrier mobility.
第２図はプラズマ水素処理に用いられる最も一般的な装
置の概略を示しており、Ｓは基板。Figure 2 shows an outline of the most common equipment used for plasma hydrogen treatment, where S is the substrate.
１は真空槽、２１及び２２は電極、３はｒｆ電源、４は
基板加熱用ヒータを表わしている。1 is a vacuum chamber, 21 and 22 are electrodes, 3 is an RF power source, and 4 is a heater for heating the substrate.
このプラズマ水素処理は、真空槽１にＨ２ガスを導入し
真空排気により真空槽１内を数Ｔｏｒｒに保ち、ｒｆ電
源（１３，５６ＭＨｚ） ３により平行平板電極２１、
２２間に放電を起こさせる。この放電により）（２ガス
がラジカル及びイオンに解離され、それが基板Ｓに熱拡
散されるというものである。ここで、基板側電極２１は
接地されており、対向電極２２にはｒｆ電極３によりセ
ルフバイアスがかかるようになっている。In this plasma hydrogen treatment, H2 gas is introduced into the vacuum chamber 1, the inside of the vacuum chamber 1 is maintained at several Torr by evacuation, and parallel plate electrodes 21,
A discharge is caused between 22 and 22 hours. Due to this discharge, the two gases are dissociated into radicals and ions, which are thermally diffused to the substrate S. Here, the substrate side electrode 21 is grounded, and the counter electrode 22 is connected to the RF electrode 3. This results in self-bias.
だが、こうした従来の（通常の）平行平板型プラズマ水
素処理にあっては、プラズマ中に発生するラジカルやイ
オン（特にＨ１イオン）はセルフバイアスのかかってい
るｆｆ１ｔ！（対向電極２２）に衝突し、そこでＨ＋イ
オンによるスパッタリング現象が生じ、このスパッタリ
ングによって基板Ｓ上に電極２２の材料成分の薄膜が形
成されるという事態が往々に発生している。従って、電
極２２が５ＵＳ（ステンレス鋼）であれば基板Ｓ上に堆
積される膜はＦｅ、 Ｎｉ、 Ｃｒどの５′異物″を含
有するようになる。However, in such conventional (ordinary) parallel plate plasma hydrogen processing, the radicals and ions (especially H1 ions) generated in the plasma are self-biased ff1t! (Counter electrode 22), where a sputtering phenomenon occurs due to H+ ions, and this sputtering often causes a thin film of the material component of electrode 22 to be formed on substrate S. Therefore, if the electrode 22 is made of 5US (stainless steel), the film deposited on the substrate S will contain 5' foreign substances such as Fe, Ni, and Cr.
第３図はそうした現象を図解したものであり、破線で囲
まれた領域はプラズマ放電雰囲気、矢印が下向きになっ
ていて丸で囲っであるＦｅ、 Ｃｒ。Figure 3 illustrates such a phenomenon, where the area surrounded by the broken line is a plasma discharge atmosphere, the arrow points downward, and the area surrounded by a circle is Fe, Cr.
及びＮｉは電極２２材料のスパッタリング現象、基板Ｓ
上の丸で囲っであるＦｅ、 Ｃｒ、及びＮｊはそのスパ
ッタリングにより堆積した″異物″である。and Ni are the sputtering phenomenon of the electrode 22 material, the substrate S
Fe, Cr, and Nj, which are circled above, are "foreign substances" deposited by sputtering.
これら″異物″は化学エツチングによってはエツチング
されないし、リーク故障を生じさせるおそれもあり、実
装する際のＡＱワイヤーボンディングの不良率を上昇さ
せる原因となる。実際、センサ、液晶パネル、ＥＬパネ
ルなどにおいてそれらの駆動用ＴＰＴを形成させた後、
この上層にデザインされるデバイスではパ異物″が存在
することは不都合である。These "foreign substances" cannot be etched by chemical etching and may cause leakage failures, causing an increase in the failure rate of AQ wire bonding during mounting. In fact, after forming the driving TPT for sensors, liquid crystal panels, EL panels, etc.
In devices designed on this upper layer, the presence of "particles" is a disadvantage.
もっとも、平行平板型プラズマ水素処理装置の他に、（
イ）プラズマ発生部と基板セット部とを分離した水素処
理装置を用いる（例えばＩＥＥＥＥＤＬ、 ＶｏＬ ７
、 Ｎ［Ｌｌｌ １９８６“Ｈｙｄｒｏｇｅｎｅｒａ
ｔｉｏｎｆｏｒ ＰｏＱｙ−３ｉ ＦＥＴ’Ｓ ｂｙ
Ｉｏｎ Ｓｈｏｗｅｒ ＤａｐｉｎｇＴｅｃｈｎｉｑｕ
ｅ”）、（ロ）水素処理をシリコンナイトライド（Ｓ１
３Ｎ４）のプラズマ化学気相成長法で行なう（例えばＩ
ＥＥＥ ＥＤＬ、 ＶｏＱ、 ５ 、 Ｍａｉｌ １９
８４“Ｈｙｄｒｏｇｅｎ Ｐａ５ｓｉｖａｔｉｏｎ ｏ
ｆ Ｐｏｆｌｙ−５ｉ ＭＯ５ＦＥＴ’Ｓｆｒｏｍ ａ
ＰＱａｓｍａ Ｎ１ｔｒｉｄｅ ５ｏｕｒｃｅ”）な
どがあげられる。だが、前記（イ）では大面積デバイス
の薄膜トランジスタには装置的に実現が難しく、方、前
記（ロ）ではＳｉ、Ｎ、膜が形成されるが、この膜は化
学的エツチングに対しあまりにも安定している（エツチ
ングされにくい）ため、必要によりなされるエツチング
が勢い過度になり勝ちで下地のＡＱ層等へダメージを与
えやすい、等の欠陥がある。However, in addition to parallel plate plasma hydrogen treatment equipment, (
b) Using a hydrogen treatment device in which the plasma generation part and the substrate setting part are separated (e.g. IEEE EDL, VoL 7
, N [Lll 1986 “Hydrogenera
tionfor PoQy-3i FET'S by
Ion Shower Daping Technique
(b) Hydrogen treatment with silicon nitride (S1
3N4) plasma chemical vapor deposition method (for example, I
EEE EDL, VoQ, 5, Mail 19
84 “Hydrogen Pa5sivation o
f Pofly-5i MO5FET'Sfrom a
However, in (b) above, Si, N, and films are formed, but in (b) above, it is difficult to realize thin film transistors for large-area devices. Since the film is too stable against chemical etching (it is difficult to be etched), the etching that is carried out when necessary tends to be excessively vigorous, which tends to damage the underlying AQ layer and the like.
こうした理由から、最近最も実用に供されているのは、
前記のごとき欠陥（基板Ｓ上に堆積される膜中への″異
物″の混入）が指摘されているものの平行平板型プラズ
マ水素処理である。For these reasons, the ones that have been put into practical use recently are:
Although the above-mentioned defects (inclusion of "foreign matter" into the film deposited on the substrate S) have been pointed out, this is a parallel plate type plasma hydrogen treatment.
本発明は、良好なプラズマ水素処理がなされると同時に
、安定したかつ加工しやすいパッシベーション膜が形成
される、多結晶シリコン薄膜トランジスタの製造方法を
提供するものである。The present invention provides a method for manufacturing a polycrystalline silicon thin film transistor in which a stable and easy-to-process passivation film is formed while performing a good plasma hydrogen treatment.
本発明は絶縁基板上に多結晶シリコンを半導体材料とし
て形成した薄膜トランジスタ（ＴＰＴ）の製造方法にお
いて、そのＴＰＴの水素プラズマ処理するに際し、水素
プラズマ処理に使用されるガス中に炭素、水素、酸素及
び窒素を構成原子とした有機化合物を導入せしめること
によって、ダイヤモンド状薄膜を堆積させるとともに多
結晶シリコン内に水素を拡散させることを特徴としてい
る。The present invention relates to a method for manufacturing a thin film transistor (TPT) in which polycrystalline silicon is formed as a semiconductor material on an insulating substrate, and in hydrogen plasma treatment of the TPT, carbon, hydrogen, oxygen and The method is characterized by depositing a diamond-like thin film and diffusing hydrogen into polycrystalline silicon by introducing an organic compound containing nitrogen as a constituent atom.
ちなみに、本発明者は前記目的を達成するためにいろい
ろ検討を行なった結果、水素ガスとともにガス状又はガ
ス化された有機化合物を真空槽中に導入しそこで平行平
板型プラズマ水素処理を施せば良好な結果が得られるこ
とを確めた。本発明方法はこれに基づいてなされたもの
である。Incidentally, as a result of various studies to achieve the above object, the present inventor found that it is possible to introduce a gaseous or gasified organic compound together with hydrogen gas into a vacuum chamber and perform parallel plate plasma hydrogen treatment there. It was confirmed that good results could be obtained. The method of the present invention is based on this.
以下に、本発明方法を図面に従がいながら更に詳細に説
明する。第１図は本発明方法の実施に好適な装置の代表
例の１つを示している。第１図と第２図との比較から容
易に判かるように、本発明方法はプラズマ水素処理ガス
にガス状又はガス化された有機化合物を導入することに
よって、ダイヤモンド状炭素薄膜を堆積させると同時に
、多結晶シリコン中に水素を拡散するという手法が採用
されている。The method of the present invention will be explained in more detail below with reference to the drawings. FIG. 1 shows one representative example of an apparatus suitable for carrying out the method of the invention. As can be easily seen from a comparison between FIG. 1 and FIG. 2, the method of the present invention deposits a diamond-like carbon thin film by introducing a gaseous or gasified organic compound into the plasma hydrogen treatment gas. At the same time, a method of diffusing hydrogen into polycrystalline silicon has been adopted.
ここで使用される有機化合物はその分子中にハロゲンを
含んでおらず、更に好ましくはハロゲンに加えてアルカ
リ金属をもその分子中に含んだものでなければよく、従
って、好ましくはＣ，Ｈ，○及びＮ（更に好ましくはＣ
，Ｈ及びＯ）の各原子で構成された有機化合物である。The organic compound used here does not contain a halogen in its molecule, and more preferably does not contain an alkali metal in its molecule in addition to a halogen. Therefore, preferably C, H, ○ and N (more preferably C
, H, and O).
具体的には、飽和炭化水素（アルカン類）、不飽和炭化
水素（アルケン類、アルキン類）、アルコール類、エー
テル類、芳香族類などがあげられるが、好ましくは分子
量の小さいものの使用が有利である。有機化合物が常温
で液体のものである場合にはバブラーを使用しガス化さ
せてから真空槽１内に導入する必要がある。Specific examples include saturated hydrocarbons (alkanes), unsaturated hydrocarbons (alkenes, alkynes), alcohols, ethers, aromatics, etc., but it is advantageous to use those with a small molecular weight. be. If the organic compound is liquid at room temperature, it is necessary to gasify it using a bubbler before introducing it into the vacuum chamber 1.
有機化合物ガス／水素ガスの流量割合は、有機化合物の
種類によって一概に決められないが、おおむね５ＳＣＣ
Ｍ／１１００５ＣＣ〜３０ＳＣＣＭ／ １１００５ＣＣ
好ましくは約２０ＳＣＣＭ ／ １１００５ＣＣである
。また、真空槽１内の圧力は０．３〜２．０Ｔｏｒｒ、
好ましくは約０．５Ｔｏｒｒであり、基板温度は１００
−４００℃、好ましくは約３５０℃である。The flow rate ratio of organic compound gas/hydrogen gas cannot be determined unconditionally depending on the type of organic compound, but it is approximately 5SCC.
M/11005CC~30SCCM/11005CC
Preferably about 20SCCM/11005CC. In addition, the pressure inside the vacuum chamber 1 is 0.3 to 2.0 Torr,
Preferably it is about 0.5 Torr and the substrate temperature is 100
-400°C, preferably about 350°C.
いま、有機化合物としてメタノール（ＣＨ，ＯＨ）を選
択しこれをガス化させ、Ｈ２ガスとともに第゛１図のプ
ラズマ水素処理中に導入した場合を例にとって説明する
。Now, an example will be explained in which methanol (CH, OH) is selected as an organic compound, gasified, and introduced together with H2 gas during the plasma hydrogen treatment shown in FIG. 1.
平行平板電極２１．２２間に高周波電界（１３，５６Ｍ
ｔ（ｚ）を印加するとグロー放電が発生し、原料ガス（
Ｈ２ガス、ＣＨ，０１（ガス）はプラズマ中でラジカル
とイオンとに分解される。A high frequency electric field (13,56M
When t(z) is applied, a glow discharge occurs and the raw material gas (
H2 gas and CH,01 (gas) are decomposed into radicals and ions in the plasma.
（水素分子）
Ｈ２→２Ｈ・・・（１）
Ｈ２−＋２Ｈ”＋２ｅ−−（２）
Ｈ２→２ Ｈ＋ Ｈ” ＋ ｅ −＝・（３）（メタノ
ール分子）
ＣＨ３０Ｈ−＋ＣＨ”＋ＯＨ−・・（４）ＣＨ，○Ｈ−
＋ＣＨ３”＋ＯＨ” ・・（５）ＣＨ３０Ｈ−＋
ＣＨ３”＋ＯＨ−＋ ２ ｅ−−（６）ＣＨ，ＯＨ−＋
ＣＨ，”＋○Ｈ−・・・（７）ＣＨ，”→ＣＨア ＋Ｈ
・・・（８）
ＣＨ３”−＋ＣＨ２”＋Ｉ−（”＋ ２ ｅ−−（９）
ＣＨ→○ ＋Ｈ・・・（１０）
ＣＨ−）０ ＋Ｈ・・・（１１）
これら式において、それぞれ（１）から（３）までは多
結晶シリコンへの水素拡散に寄与、（４）から（７）ま
でのうちメチルラジカル、メチルアニオンがダイヤモン
ド状炭素薄膜形成に寄与、（８）から（１１）までのう
ち水素ラジカル、水素アニオンが多結晶シリコンへの水
素拡散に寄与、（１０）及び（１１）のうち酸素ラジカ
ルは炭素薄膜のエツチングに寄与するといった役割を果
す。なお、そうした寄与にあずからない、ラジカル、イ
オン等はその量が僅かであり、また、そうしたラジカル
、イオン等の存在は本発明方法では無視しうることがで
きる。(Hydrogen molecule) H2→2H...(1) H2-+2H"+2e--(2) H2-→2 H+ H"+e-=・(3)(Methanol molecule) CH30H-+CH"+OH-...( 4) CH, ○H-
+CH3"+OH"...(5)CH30H-+
CH3"+OH-+ 2 e--(6) CH, OH-+
CH,"+○H-...(7)CH,"→CHa +H
...(8) CH3"-+CH2"+I-("+ 2 e--(9)
CH→○ +H...(10) CH-)0 +H...(11) In these equations, (1) to (3) contribute to hydrogen diffusion into polycrystalline silicon, and (4) to ( Among 7), methyl radicals and methyl anions contribute to the formation of a diamond-like carbon thin film, among (8) to (11), hydrogen radicals and hydrogen anions contribute to hydrogen diffusion into polycrystalline silicon, and (10) and ( Of 11), oxygen radicals play a role of contributing to etching of the carbon thin film. Note that the amount of radicals, ions, etc. that do not make such a contribution is small, and the presence of such radicals, ions, etc. can be ignored in the method of the present invention.
即ち、これら活性種により、多結晶シリコンには水素拡
散が行なわれ、同時に、基板上にはダイヤモンド状炭素
薄膜が堆積される。That is, hydrogen is diffused into the polycrystalline silicon by these active species, and at the same time, a diamond-like carbon thin film is deposited on the substrate.
但し、この堆積されたダイヤモンド状炭素薄膜は、Ｘ
−ｒａｙ及び電子回折分析によりアモルファス状態（ａ
−Ｃ：Ｈ）であって、完全なダイヤモンド構°造を呈し
ている訳ではなく、製膜条件によっても異なるが、ＩＲ
吸収法及びラマン分光法による分析の結果、ダイヤモン
ド構造（炭素原子がｓｐ３の混成軌道を形成）とグラフ
ァイト構造（炭素原子がｓｐ２の混成軌道を形成）とが
混在した状態となっているのが認められる。ダイヤモン
ド構造の占める割合が多ければ絶縁性にすぐれ、また応
力の少ない（約１０’Ｎ／ｍ）膜が形成される。However, this deposited diamond-like carbon thin film is
-ray and electron diffraction analysis revealed an amorphous state (a
-C:H), which does not have a perfect diamond structure and varies depending on the film forming conditions, but the IR
As a result of analysis by absorption method and Raman spectroscopy, it was found that the diamond structure (carbon atoms form an sp3 hybrid orbital) and graphite structure (carbon atoms form an sp2 hybrid orbital) coexist. It will be done. If the proportion occupied by the diamond structure is high, a film with excellent insulation properties and low stress (approximately 10'N/m) will be formed.
メタノール中の炭素はＳＦ３の混成軌道を有しているた
め、軌道結合しているＨ原子等が立体障壁となり、ｓ
Ｐ３の結合を保持しながら堆積される。従って、理想的
なダイヤモンド状炭素薄膜が形成されやすい。また、メ
タノール中の酸素（正確には式（１０）及び（１１）中
の酸素ラジカル）は堆積されていくダイヤモンド状炭素
薄膜をエツチングし、このエツチングの作用により弱い
結合の炭素が除かれ、強い結合のみのダイヤモンド状炭
素薄膜が形成できる。Since the carbon in methanol has a hybrid orbital of SF3, the orbital-bonded H atoms etc. act as steric barriers, causing s
It is deposited while retaining the bond of P3. Therefore, an ideal diamond-like carbon thin film is easily formed. In addition, the oxygen in methanol (more precisely, the oxygen radicals in formulas (10) and (11)) etches the diamond-like carbon thin film that is being deposited, and this etching action removes weak carbon bonds and strengthens them. A diamond-like carbon thin film with only bonds can be formed.
ＣＨ、ＯＨの池水発明方法に特に有用な有機化合物とし
てはメタン（ＣＩ（４）、エタン（Ｃ２Ｈｓ ）、ベン
ゼン（ｃｓ ＨＧ ）などがあげられる。Organic compounds that are particularly useful in the CH, OH method include methane (CI(4)), ethane (C2Hs), benzene (csHG), and the like.
本発明方法により形成されたダイヤモンド状炭素膜はそ
のエツチングに際して下地ＡＱ膜（ＡＱ配ａ）等へのダ
メージを与えることが避けられる。The diamond-like carbon film formed by the method of the present invention can avoid damaging the underlying AQ film (AQ pattern a) and the like during etching.
〔効 果〕
本発明方法によれば、水素拡散によって多結晶シリコン
中のダングリングボンドを極力減少せしめられキャリア
移動度が向上し、同時に、表面にダイヤモンド状炭素薄
膜を形状しうるので、工程の短縮が図られ、歩留りも向
上する。[Effects] According to the method of the present invention, dangling bonds in polycrystalline silicon are reduced as much as possible by hydrogen diffusion, carrier mobility is improved, and at the same time, a diamond-like carbon thin film can be formed on the surface, so that the process can be simplified. It is possible to shorten the time and improve yield.
第１図は本発明方法の実施に有用な装置の一例の概略図
である。
第２図及び第３図は従来の平行平板型プラズマ水素処理
を説明するための図である。
１・真空槽 ２１．２２・・・電極
３・・ｒｆ 電 源 ４・・・基板加熱用ヒータ
Ｓ・基 板FIG. 1 is a schematic diagram of an example of apparatus useful in carrying out the method of the present invention. FIGS. 2 and 3 are diagrams for explaining conventional parallel plate type plasma hydrogen processing. 1. Vacuum chamber 21. 22... Electrode 3... RF power supply 4... Substrate heating heater S/substrate
Claims (1)
成した薄膜トランジスタを水素プラズマ処理するに際し
て、その水素プラズマ処理に使用されるガス中に炭素、
水素、酸素及び窒素を構成原子とした有機化合物を導入
せしめ、ダイヤモンド状薄膜を堆積させるとともに多結
晶シリコン内に水素を拡散させることを特徴とする多結
晶シリコン薄膜トランジスタの製造方法。1. When hydrogen plasma treatment is performed on a thin film transistor made of polycrystalline silicon as a semiconductor material on an insulating substrate, carbon,
A method for manufacturing a polycrystalline silicon thin film transistor, which comprises introducing an organic compound containing hydrogen, oxygen, and nitrogen as constituent atoms, depositing a diamond-like thin film, and diffusing hydrogen into polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19079788A JPH0239524A (en) | 1988-07-29 | 1988-07-29 | Manufacture of polycrystalline silicone thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19079788A JPH0239524A (en) | 1988-07-29 | 1988-07-29 | Manufacture of polycrystalline silicone thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0239524A true JPH0239524A (en) | 1990-02-08 |
Family
ID=16263903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19079788A Pending JPH0239524A (en) | 1988-07-29 | 1988-07-29 | Manufacture of polycrystalline silicone thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0239524A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015597A (en) * | 1989-08-29 | 1991-05-14 | Centre National D'etudes Des Telecommunications Et D'etudes Spatiales | Process for the production of an inverted structure, active matrix display screen |
| WO2014098247A1 (en) | 2012-12-21 | 2014-06-26 | 川崎重工業株式会社 | Care bed and method for changing shape thereof |
-
1988
- 1988-07-29 JP JP19079788A patent/JPH0239524A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5015597A (en) * | 1989-08-29 | 1991-05-14 | Centre National D'etudes Des Telecommunications Et D'etudes Spatiales | Process for the production of an inverted structure, active matrix display screen |
| WO2014098247A1 (en) | 2012-12-21 | 2014-06-26 | 川崎重工業株式会社 | Care bed and method for changing shape thereof |
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