JPH0235421B2 - - Google Patents
Info
- Publication number
- JPH0235421B2 JPH0235421B2 JP60249691A JP24969185A JPH0235421B2 JP H0235421 B2 JPH0235421 B2 JP H0235421B2 JP 60249691 A JP60249691 A JP 60249691A JP 24969185 A JP24969185 A JP 24969185A JP H0235421 B2 JPH0235421 B2 JP H0235421B2
- Authority
- JP
- Japan
- Prior art keywords
- secondary electron
- sample
- spectrometer
- extraction electrode
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000605 extraction Methods 0.000 claims description 56
- 239000000523 sample Substances 0.000 claims description 38
- 230000005684 electric field Effects 0.000 claims description 20
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000562 secondary electron spectroscopy Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、試料に電子ビームを照射し、試料よ
り発生した二次電子のエネルギーを分析すること
により試料の電位を測定するようにしたICテス
タとして好適な強二次電子引き出し電界を持つ二
次電子分光装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides an IC that measures the potential of a sample by irradiating the sample with an electron beam and analyzing the energy of secondary electrons generated from the sample. The present invention relates to a secondary electron spectroscopy device having a strong secondary electron extraction electric field suitable as a tester.
最近ICの集積度が向上してきたため、細い探
針をIC内部の配線に当てて、オツシロスコープ
等で内部電位を測定していた従来のICテスタで
は、探針の方が配線より大きくなつてしまい、測
定不可能な状況になつてきた。そこで、この探針
に代えて、電子ビームをプローブとしてIC内部
の配線に照射し、そこから発生する二次電子の強
度からIC内部の配線の電位を測定するEBテスタ
の開発が最近盛んに行われている。
As the integration density of ICs has improved recently, in conventional IC testers, which measured the internal potential using an oscilloscope by applying a thin probe to the wiring inside the IC, the probe was now larger than the wiring. The situation has reached a point where it is impossible to measure. Therefore, instead of using this probe, EB testers have recently been actively developed that use an electron beam as a probe to irradiate the wiring inside the IC and measure the potential of the wiring inside the IC from the intensity of the secondary electrons generated. It is being said.
第４図は、このような従来のEBテスタを示す
図で、図中１は対物レンズ、EBは電子線、２は
IC等の試料、３は試料２より二次電子を引き出
すための網目状の引き出し電極、４は二次電子を
そのエネルギーに応じて弁別するためのグリツ
ド、５はグリツド４に電位Φを与えるための電
源、６は二次電子検出器、７は二次電子検出器へ
二次電子を導くための網目状の偏向電極、８は増
幅器、９は比較器で、増幅器８の出力と基準電圧
を比較し、比較器入力が一定になるように電源５
に負帰還をかけている。１０は記録計である。 Figure 4 shows such a conventional EB tester, where 1 is the objective lens, EB is the electron beam, and 2 is the
A sample such as an IC, 3 is a mesh extraction electrode for extracting secondary electrons from sample 2, 4 is a grid for discriminating secondary electrons according to their energy, and 5 is for applying a potential Φ to grid 4. 6 is a secondary electron detector, 7 is a mesh deflection electrode for guiding secondary electrons to the secondary electron detector, 8 is an amplifier, and 9 is a comparator, which connects the output of the amplifier 8 and a reference voltage. power supply 5 so that the comparator input is constant.
I have given a negative feedback. 10 is a recorder.
このような構成において、電子線EBの試料２
への照射によつて試料２より発生した二次電子ｅ
は、引き出し電極３を通過してグリツド４へ向か
い、引き出し電極３とグリツド４間の減速電界に
打ち勝つエネルギーを有する二次電子のみがグリ
ツド４を通過して検出器６に検出される。増幅器
８によつて増憤された検出器６の出力信号は負帰
還回路を構成する比較器９に供給され、この供給
された信号が基準信号と一致するように電源５か
らグリツド４に与えられる電位が制御され、この
電位が記録計１０の表示として読み取られる。 In such a configuration, sample 2 of electron beam EB
Secondary electrons e generated from sample 2 by irradiation with
The secondary electrons pass through the extraction electrode 3 and head toward the grid 4, and only secondary electrons having energy enough to overcome the deceleration electric field between the extraction electrode 3 and the grid 4 pass through the grid 4 and are detected by the detector 6. The output signal of the detector 6 amplified by the amplifier 8 is supplied to a comparator 9 constituting a negative feedback circuit, and the supplied signal is supplied to the grid 4 from the power supply 5 so that it matches the reference signal. The potential is controlled and this potential is read as an indication on the recorder 10.
いま、試料２の電位をパラメータとしてグリツ
ド電位を変化させると、このときの二次電子強度
は、第５図のようなＳカーブ曲線群を描き、各曲
線は試料電位に応じて横軸方向に平行移動した関
係になる。そこで、比較器９の基準電圧を適当に
選び、二次電子電流が一定の値Isになるようにグ
リツド電位を制御してやれば、グリツド電位が試
料の電位に１対１に対応するので、グリツド電位
を観測することにより、試料の電位を正確に測定
することができる。 Now, when the grid potential is changed using the potential of sample 2 as a parameter, the secondary electron intensity at this time will draw a group of S-curve curves as shown in Figure 5, and each curve will change in the horizontal axis direction according to the sample potential. It becomes a parallel movement relationship. Therefore, if the reference voltage of the comparator 9 is appropriately selected and the grid potential is controlled so that the secondary electron current becomes a constant value Is , the grid potential corresponds one-to-one to the sample potential, so the grid potential By observing the potential, the potential of the sample can be accurately measured.
被測定対象となるIC試料については、半導体
製造技術の進歩とともにIC内部電極の幅がます
ます微細になつていている。電極幅が微細になれ
ばなる程、微細電極による局所電界が強くなり電
極前面に電位障壁を形成する。第６図は、この様
子を示す図で、例えば、中央の電極が＋5V、両
側の近接した電極が0Vとしたときの近傍の電位
分布を示したもので、電位按点Ｐが生じ、ここの
電位が例えば0.4Vとすれば、4.6eV以下のエネル
ギの二次電子は検出できなくなつてしまう。この
ため検出電流が減少し、測定精度が悪くなると共
に、場合によつては、検出電流が第４図のフイー
ドバツクループからはずれてしまい、測定不能と
なつてしまう。この電位障壁は、第７図に示すよ
うに例えば1KV程度を加え、二次電子引き出し
電界を強くすることで電位按点を消滅させて抑制
することができる。
Regarding IC samples to be measured, the width of IC internal electrodes is becoming smaller and smaller as semiconductor manufacturing technology advances. As the electrode width becomes finer, the local electric field due to the finer electrode becomes stronger, forming a potential barrier in front of the electrode. Figure 6 is a diagram showing this situation. For example, it shows the potential distribution in the vicinity when the center electrode is set to +5V and the adjacent electrodes on both sides are set to 0V. For example, if the potential is 0.4V, secondary electrons with energy below 4.6eV cannot be detected. As a result, the detected current decreases, measurement accuracy deteriorates, and in some cases, the detected current deviates from the feedback loop shown in FIG. 4, making measurement impossible. This potential barrier can be suppressed by applying, for example, about 1 KV to strengthen the secondary electron extraction electric field, as shown in FIG. 7, to eliminate the potential point.
ところで、パツケージに入れられたIC（ICチツ
プ表面はパツケージ表面から約１〜約1.5mm下に
位置する）の内部電位を測定する場合、分光器の
二次電子引き出し電極はICパツケージ開口部の
大きさ（１cm四方程度）と分光器構造とその大き
さのため近くてICチツプ表面から２mm程度上に
設置されるのが通常である。さらに、引き出し電
極とICパツケージとの近接による放電を避ける
ためアースシールド電極が分光器に設けられてい
る場合、引き出し電極とチツプ表面間の距離はさ
らに長くなる。このような現状の分光器構造のま
まで引き出し電極電圧を上昇させると、二次電子
が強い引き出し電極電圧の影響を受けて分光器の
エネルギ分解能を悪化させるのみならず、電子ビ
ーム損傷を軽減させるために用いられる低エネル
ギ一次照射電子線に悪影響を及ぼしてしまう。 By the way, when measuring the internal potential of an IC placed in a package (the IC chip surface is located approximately 1 to 1.5 mm below the package surface), the secondary electron extraction electrode of the spectrometer is Due to its size (approximately 1 cm square), spectrometer structure, and its size, it is usually installed close to the IC chip, about 2 mm above the surface. Furthermore, if the spectrometer is provided with an earth shield electrode to avoid discharge due to the proximity of the extraction electrode and the IC package, the distance between the extraction electrode and the chip surface becomes even longer. If the extraction electrode voltage is increased with the current spectrometer structure as it is, the secondary electrons will be affected by the strong extraction electrode voltage, which will not only deteriorate the energy resolution of the spectrometer but also reduce electron beam damage. This adversely affects the low-energy primary irradiation electron beam used for this purpose.
また仮に、ICパツケージ開口部より小さい分
光器構造が設計でき、引き出し電極をICチツプ
表面に近づけ得たとしても、分光器とICパツケ
ージがほぼ一体化するため、一次照射電子ビーム
の照射点の自由度が大幅に低下してしまう。 Furthermore, even if it were possible to design a spectrometer structure smaller than the IC package opening and bring the extraction electrode close to the IC chip surface, since the spectrometer and IC package would be almost integrated, the irradiation point of the primary irradiation electron beam would be free. The level will drop significantly.
本発明は斯かる事情に鑑みてなされたもので、
電子ビーム用いて微細電極上の電位を測定する二
次電子分光装置において、分光器の状態を悪化さ
せず、一次照射電子ビームに影響を与えず、また
一次電子ビーム照射点の自由度をできるだけ低下
させることなく強い二次電子引き出し電界を印加
できるようにすることを目的とする。 The present invention was made in view of such circumstances,
In a secondary electron spectrometer that uses an electron beam to measure the potential on a fine electrode, the condition of the spectrometer is not deteriorated, the primary irradiation electron beam is not affected, and the degree of freedom of the primary electron beam irradiation point is reduced as much as possible. The purpose is to make it possible to apply a strong secondary electron extraction electric field without causing any interference.
そのために本発明は、試料に電子線を照射する
手段と、試料に対向配置した分光器二次電子引き
出し電極と、電子線の照射により試料から発生し
た二次電子をそのエネルギに応じて弁別するため
のグリツドとを備え、該グリツドを通過した二次
電子を検出することにより試料の電位を測定する
ようにした装置において、前記分光器二次電子引
き出し電極の試料側に、該電極と同電位でかつ機
械的に独立し、一部を突出させた補助引き出し電
極を設けたことを特徴とする。
To this end, the present invention provides a means for irradiating a sample with an electron beam, a spectrometer secondary electron extraction electrode disposed opposite to the sample, and a method for discriminating secondary electrons generated from the sample by irradiation with the electron beam according to their energy. In this apparatus, the potential of the sample is measured by detecting the secondary electrons that have passed through the grid. It is characterized by the provision of an auxiliary extraction electrode that is large and mechanically independent, with a portion protruding.
本発明による強二次電子引き出し電界を持つ二
次電子分光装置は、分光器二次電子引き出し電極
と試料との間に補助引き出し電極を、試料に対向
して近接配置して、低電圧で強い引き出し電界を
実現している。また補助引き出し電極を試料と共
に移動可能にして照射ビーム位置を自由に選べる
ようにしている。
The secondary electron spectrometer with a strong secondary electron extraction electric field according to the present invention has an auxiliary extraction electrode placed between the spectrometer secondary electron extraction electrode and the sample in close proximity to the specimen, and has a strong secondary electron extraction field at low voltage. This realizes an extraction electric field. In addition, the auxiliary extraction electrode is movable together with the sample so that the irradiation beam position can be freely selected.
以下、本発明の実施例を図面を参照して説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明による強二次電子引き出し電
界を持つ二次電子分光装置の一実施例を示す図
で、図中、１１はICパツケージ、１２は被測定
対象であるICチツプ、１３は分光器引き出し電
極、１４は補助引き出し電極、１５は絶縁物であ
る。 FIG. 1 is a diagram showing an embodiment of a secondary electron spectrometer having a strong secondary electron extraction electric field according to the present invention. In the figure, 11 is an IC package, 12 is an IC chip to be measured, and 13 is an IC chip. A spectrometer extraction electrode, 14 is an auxiliary extraction electrode, and 15 is an insulator.
第１図に示す分光装置においては、分光器二次
電子引き出し電極１３と同電位VEの補助引き出
し電極１４を試料斜面に設ける。補助引き出し電
極１４は図示するように一部を突出させてICチ
ツプ１２に対向させ、試料面に対し0.1〜0.5mm程
度の間隔となるように近接配置する。こうするこ
とにより、ICチツプ表面に低引き出し電界強い
引き出し電界を印加することができ、一次照射電
子ビームと二次電子に悪影響を与えずに電位障壁
を抑制することが可能となる。 In the spectrometer shown in FIG. 1, an auxiliary extraction electrode 14 having the same potential V E as the spectrometer secondary electron extraction electrode 13 is provided on the sample slope. As shown in the figure, the auxiliary lead-out electrode 14 is partially protruded to face the IC chip 12, and is placed close to the sample surface at an interval of about 0.1 to 0.5 mm. By doing so, it is possible to apply a low extraction electric field and a strong extraction electric field to the surface of the IC chip, and it becomes possible to suppress the potential barrier without adversely affecting the primary irradiation electron beam and secondary electrons.
さらに、補助引き出し電極と分光器引き出し電
極とが等電位であるため、ICチツプ表面から強
い二次電子引き出し電界で引き出された二次電子
は、第２図に示すよう補助引き出し電極により強
く発散される。このため分光器に一次ビーム通過
用のために開けられた穴に二次電子が集中するこ
とがなく、分光器の性能は低下しない。さらに、
補助引き出し電極１４と分光器の引き出し電極１
３とは機械的に独立して設けるようにしており、
そのため、試料を分光器に対して自由に移動で
き、ビーム照射位置の自由度もあまり損なわれな
い。なお補助引き出し電極として、第１図ではグ
リツド電極を考えているが、これは円孔電極でも
かまわない。 Furthermore, since the auxiliary extraction electrode and the spectrometer extraction electrode are at equal potential, the secondary electrons extracted from the IC chip surface by the strong secondary electron extraction electric field are strongly diverged by the auxiliary extraction electrode, as shown in Figure 2. Ru. Therefore, secondary electrons do not concentrate in the hole made in the spectrometer for passing the primary beam, and the performance of the spectrometer does not deteriorate. moreover,
Auxiliary extraction electrode 14 and spectrometer extraction electrode 1
It is designed to be mechanically independent from 3.
Therefore, the sample can be moved freely relative to the spectrometer, and the degree of freedom in the beam irradiation position is not significantly impaired. Although a grid electrode is considered as the auxiliary lead-out electrode in FIG. 1, a circular hole electrode may also be used.
第３図は、本発明による分光装置をプローブカ
ードと共に使用した場合の実施例を示し、図中、
２０はウエーハ、２１はICチツプ、２２はプロ
ーブカード、２３は針、２４は分光器二次電子引
き出し電極、２５は補助引き出し電極、２６は照
射電子ビームである。 FIG. 3 shows an embodiment in which the spectroscopic device according to the present invention is used together with a probe card, and in the figure,
20 is a wafer, 21 is an IC chip, 22 is a probe card, 23 is a needle, 24 is a spectrometer secondary electron extraction electrode, 25 is an auxiliary extraction electrode, and 26 is an irradiation electron beam.
第３図の分光装置はICチツプ２１が平坦面に
ある場合を示し、図示するようにプローブカード
２２により積極的に開口部を形成し、この開口部
に収まるように補助電極２５の一部を突出させて
ICチツプ２１に対向させ、近接配置するように
したもので、補助引き出し電極をプローブカード
２２に保持するようにしているので、針２３をパ
ツドにコンタクトさせた後は、ビームに対し補助
電極をプローブカードと共に移動させることがで
き、第１図の場合と同様に、ビーム照射位置の自
由度を損なうことはない。 The spectroscopic device shown in FIG. 3 shows the case where the IC chip 21 is on a flat surface, and as shown in the figure, an opening is actively formed by the probe card 22, and a part of the auxiliary electrode 25 is inserted to fit into this opening. Make it stand out
The auxiliary electrode is placed close to the IC chip 21, and the auxiliary lead-out electrode is held on the probe card 22. After the needle 23 is brought into contact with the pad, the auxiliary electrode is probed against the beam. It can be moved together with the card, and as in the case of FIG. 1, the degree of freedom of the beam irradiation position is not impaired.
以上のように本発明によれば、以下のような効
果が得られる。
As described above, according to the present invention, the following effects can be obtained.
(1) 補助引き出し電極をICチツプ表面に近接し
て設置したことにより、強二次電子引き出し電
界の印加が可能になり、微細電極上に生じる電
位障壁形成を抑制することができる。(1) By placing the auxiliary extraction electrode close to the surface of the IC chip, it is possible to apply a strong secondary electron extraction electric field and suppress the formation of potential barriers on the microelectrodes.
(2) 強電界を低電圧で実現したことにより、分光
器のエネルギ分解能の低下を防止し、一次照射
ビームへの影響を少なくすることができる。(2) By realizing a strong electric field at a low voltage, it is possible to prevent a drop in the energy resolution of the spectrometer and reduce the effect on the primary irradiation beam.
(3) 分光器引き出し電極と補助引き出し電極を等
電位としたことにより二次電子軌道の補助引き
出し電極による発散効果により、分光器の性能
悪化を防止することができる。(3) By setting the spectrometer extraction electrode and the auxiliary extraction electrode at equal potential, deterioration in spectrometer performance can be prevented due to the divergence effect of the auxiliary extraction electrode on secondary electron orbits.
(4) 分光器引き出し電極と補助引き出し電極が独
立して移動可能であるため、一次照射ビーム位
置の自由度があまり制限されない。(4) Since the spectrometer extractor electrode and the auxiliary extractor electrode can be moved independently, the degree of freedom in the position of the primary irradiation beam is not very restricted.
第１図は、本発明による強二次電子引き出し電
界を持つ二次電子分光装置の一実施例を示す図、
第２図は、補助引き出し電極近傍の電位分布と二
次電子軌道の例を示す図、第３図は、本発明によ
る強二次電子引き出し電界を持つ二次電子分光装
置をプローブカードと共に使用した場合の一実施
例を示す図、第４図は従来のEBテスタを示す図、
第５図は、グリツド電位と二次電子電流の関係を
示す図、第６図は微細電極による電位障壁の形成
を示す図、第７図は電位障壁を消滅させた場合の
電位分布図である。
１１……ICパツケージ、１２，２１……ICチ
ツプ、１３，２４……分光器二次電子引き出し電
極、１４，２５……補助引き出し電極、２０……
ウエーハ、２２……プローブカード、２３……
針、２６……電子ビーム。
FIG. 1 is a diagram showing an embodiment of a secondary electron spectrometer having a strong secondary electron extraction electric field according to the present invention;
Figure 2 is a diagram showing an example of the potential distribution and secondary electron trajectory near the auxiliary extraction electrode, and Figure 3 is a diagram showing an example of the secondary electron spectrometer having a strong secondary electron extraction electric field according to the present invention, used together with a probe card. FIG. 4 is a diagram showing a conventional EB tester,
Figure 5 is a diagram showing the relationship between grid potential and secondary electron current, Figure 6 is a diagram showing the formation of a potential barrier by fine electrodes, and Figure 7 is a potential distribution diagram when the potential barrier is eliminated. . 11...IC package, 12,21...IC chip, 13,24...Spectrometer secondary electron extraction electrode, 14,25...Auxiliary extraction electrode, 20...
Wafer, 22... Probe card, 23...
Needle, 26...Electron beam.
Claims (1)
配置した分光器二次電子引き出し電極と、電子線
の照射により試料から発生した二次電子をそのエ
ネルギに応じて弁別するためのグリツドとを備
え、該グリツドを通過した二次電子を検出するこ
とにより試料の電位を測定するようにした装置に
おいて、前記分光器二次電子引き出し電極の試料
側に、該電極と同電位でかつ機械的に独立し、一
部を突出させた補助引き出し電極を設けたことを
特徴とする強二次電子引き出し電界を持つ二次電
子分光装置。 ２ 前記補助引き出し電極の突出部と試料との間
隔が0.1〜0.5mmであることを特徴とする特許請求
の範囲第１項記載の強二次電子引き出し電界を持
つ二次電子分光装置。 ３ 前記補助引き出し電極の突出部がICパツケ
ージの開口部に収められてICチツプ表面と対向
可能にしたことを特徴とする特許請求の範囲第１
項記載の強二次電子引き出し電界を持つ二次電子
分光装置。 ４ 前記補助引き出し電極は、試料と共に移動可
能に設けられていることを特徴とする特許請求の
範囲第１項記載の強二次電子引き出し電界を持つ
二次電子分光装置。 ５ 前記補助引き出し電極は、プローブカードに
保持され、補助引き出し電極の突出部がプローブ
カード開口に収められてICチツプ表面と対向可
能にしたことを特徴とする特許請求の範囲第１項
記載の強二次電子引き出し電界を持つ二次電子分
光装置。[Scope of Claims] 1. A means for irradiating a sample with an electron beam, a spectrometer secondary electron extraction electrode disposed opposite to the sample, and a means for discriminating secondary electrons generated from the sample by irradiation with the electron beam according to their energy. In the apparatus, the potential of the sample is measured by detecting the secondary electrons that have passed through the grid. A secondary electron spectroscopy device having a strong secondary electron extraction electric field, characterized by having an auxiliary extraction electrode that is electrically and mechanically independent and partially protrudes. 2. A secondary electron spectrometer having a strong secondary electron extraction electric field according to claim 1, wherein the distance between the protrusion of the auxiliary extraction electrode and the sample is 0.1 to 0.5 mm. 3. Claim 1, characterized in that the protruding portion of the auxiliary lead-out electrode is accommodated in the opening of the IC package so as to be able to face the surface of the IC chip.
A secondary electron spectroscopy device having a strong secondary electron extraction electric field as described in 2. 4. A secondary electron spectrometer having a strong secondary electron extraction electric field according to claim 1, wherein the auxiliary extraction electrode is provided so as to be movable together with the sample. 5. The strength according to claim 1, wherein the auxiliary extraction electrode is held by a probe card, and the protrusion of the auxiliary extraction electrode is accommodated in the probe card opening so that it can face the surface of the IC chip. A secondary electron spectrometer with a secondary electron extraction electric field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249691A JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249691A JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62110245A JPS62110245A (en) | 1987-05-21 |
| JPH0235421B2 true JPH0235421B2 (en) | 1990-08-10 |
Family
ID=17196766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60249691A Granted JPS62110245A (en) | 1985-11-07 | 1985-11-07 | Secondary electron spectroscope with strong electric field for extracting secondary electron |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62110245A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5202348A (en) * | 1989-12-07 | 1993-04-13 | The University Of British Columbia | Thiarubrine antifungal agents |
| JP4519567B2 (en) | 2004-08-11 | 2010-08-04 | 株式会社日立ハイテクノロジーズ | Scanning electron microscope and sample observation method using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871543A (en) * | 1981-09-30 | 1983-04-28 | シ−メンス・アクチエンゲゼルシヤフト | Reverse field type spectrometer |
-
1985
- 1985-11-07 JP JP60249691A patent/JPS62110245A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871543A (en) * | 1981-09-30 | 1983-04-28 | シ−メンス・アクチエンゲゼルシヤフト | Reverse field type spectrometer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62110245A (en) | 1987-05-21 |
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