JPH0235344A - Surface analyzing apparatus - Google Patents

Surface analyzing apparatus

Info

Publication number
JPH0235344A
JPH0235344A JP63186110A JP18611088A JPH0235344A JP H0235344 A JPH0235344 A JP H0235344A JP 63186110 A JP63186110 A JP 63186110A JP 18611088 A JP18611088 A JP 18611088A JP H0235344 A JPH0235344 A JP H0235344A
Authority
JP
Japan
Prior art keywords
specimen
sample
etching
chamber
gate valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63186110A
Other languages
Japanese (ja)
Inventor
Yukari Imai
ゆかり 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63186110A priority Critical patent/JPH0235344A/en
Publication of JPH0235344A publication Critical patent/JPH0235344A/en
Pending legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE:To facilitate the preparation of a specimen and to observe the surface efficiently by providing an etching device for a scanning type electronic microscope as a unitary body. CONSTITUTION:A specimen 1 is mounted on a specimen stage 10. An electron beam A from an electron gun is focused through an objective lens and projected on the surface of the specimen 1. Secondary electrons generated from the surface of the specimen 1 are detected with a detector 3. An image is formed on a CRT based on the secondary electrons. Thus, the surface of the specimen is observed. When the surface of the specimen is etched, a gate valve 6 is opened, and the specimen 1 is moved into an etching chamber 5 wherein a vacuum state is maintained beforehand. Then, the gate valve 6 is closed, and Freon gas is made to flow into the etching chamber 3. At the same time, high frequency power is applied, and the surface of the specimen 1 is etched. When the etching is finished, the flow of the Freon gas is stopped, and remaining gas is exhausted through an exhaust port 9. The gate valve 6 is opened, and the specimen 1 is returned into a specimen chamber 4. Then the surface is observed.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、試料表面に電子線あるいはX線を照射し、該
試料表面から発生する信号を検出して試料表面の分析を
行う表面分析装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a surface analysis device that analyzes the surface of a sample by irradiating the surface of a sample with electron beams or X-rays and detecting signals generated from the surface of the sample. Regarding.

[従来の技術] この種の表面分析装置、例えば、走査型電子顕微鏡にお
ける試料の表面観察では、第2図に示されるように、筒
状の試料室4内の試料ステージ10に載置された試料1
表面に、図示しない電子銃からの電子線へを対物レンズ
2で校−)で照則し、試料1表面から発生ずる二次電子
を検出器3で検出し、この検出信号に基づいて、ブラウ
ン管に作像して表面観察を行っている。
[Prior Art] In surface observation of a sample in this type of surface analysis apparatus, for example, a scanning electron microscope, as shown in FIG. Sample 1
An electron beam from an electron gun (not shown) is aimed at the surface of the sample 1 using an objective lens 2, and a detector 3 detects secondary electrons generated from the surface of the sample 1. Based on this detection signal, a cathode ray tube is detected. An image is created to observe the surface.

「発明が解決しようとする課題」 このような従来の走査型電子顕微鏡において、試料表面
のさらに深い層を観察するために、試料表面をエソヂン
グするときには、走査型電子顕微鏡の試料室4から試料
1を適宜の治具によって取り出し、走査型電子顕微鏡と
は別のエッチング装置によってエソヂングを施した後、
再び走査型電子+lA微鏡の試料室4内にセットシて観
察を行わねばならず、面倒である。
``Problems to be Solved by the Invention'' In such a conventional scanning electron microscope, when ethosing the sample surface in order to observe a deeper layer on the sample surface, the sample 1 is removed from the sample chamber 4 of the scanning electron microscope. was removed using an appropriate jig and etched using an etching device separate from the scanning electron microscope.
The observation must be carried out again by setting it in the sample chamber 4 of the scanning electron +lA microscope, which is troublesome.

本発明は、」二連の点に鑑みて為されたものであって、
試料の作成および表面観察を効率的に行えるようにした
表面分析装置を提供することを目的とする。
The present invention has been made in view of two points,
It is an object of the present invention to provide a surface analysis device that enables efficient sample preparation and surface observation.

1課題を解決するための手段] 本発明では、」二連の目的を達成するために、試利表面
に電子線あるいはX線を照射し、該試別表面から発生す
る信号を検出して試別表面の分析を行う表面分析装置に
おいて、エツチング装置のエツチング室が、前記表面分
析装置の試別室にイテ]設されるとともに、前記両室間
にゲートバルブが介装されている。
In order to achieve two objects, the present invention irradiates the sample surface with electron beams or X-rays, detects the signal generated from the sample surface, and performs the test. In a surface analysis apparatus for analyzing different surfaces, an etching chamber of an etching apparatus is installed in a separation chamber of the surface analysis apparatus, and a gate valve is interposed between the two chambers.

1作用」 」二記構成によれば、表面分析装置の試ネ」室に、エツ
チング装置のエツチング室がイ」設されているので、試
料をエツチングする際には、ゲートバルブを開いて試料
を、試料室とエツチング室との間で容易に移送できるこ
とになり、エツチング装置が表面分析装置と別に設(プ
られている従来例に比べて試料の作成および表面観察が
効率よく行われることになる。
According to the configuration described in item 1 and 2, the etching chamber of the etching device is installed in the test chamber of the surface analysis device, so when etching a sample, open the gate valve and insert the sample. This means that the sample can be easily transferred between the sample chamber and the etching chamber, and sample preparation and surface observation can be performed more efficiently than in the conventional case where the etching device is installed separately from the surface analysis device. .

[実施例] 以下、図面によって本発明の実施例について、詳細に説
明する。
[Examples] Examples of the present invention will be described in detail below with reference to the drawings.

第1図は、本発明の一実施例の概略構成図であり、第2
図の従来例に対応する部分には、同一の参照符を付す。
FIG. 1 is a schematic configuration diagram of one embodiment of the present invention.
Portions corresponding to the conventional example in the figures are given the same reference numerals.

この実施例の表面分析装置では、走査型電子顕微鏡に適
用して説明する。
The surface analysis device of this embodiment will be explained by applying it to a scanning electron microscope.

この第1図において、1は試ネ」ステージ10に載置さ
れた試料、2は図示しない電子銃からの電子線Δを試ネ
ーI表面に絞る対物レンズ、3は試*’l 1表面から
発生する二次電子を検出する検出器であり、以上の構成
は、第2図の従来例と基本的に同様である。
In this Figure 1, 1 is a sample placed on the sample stage 10, 2 is an objective lens that focuses the electron beam Δ from an electron gun (not shown) onto the sample I surface, and 3 is from the sample *'l 1 surface. This is a detector for detecting generated secondary electrons, and the above configuration is basically the same as the conventional example shown in FIG.

この走査型電子顕微鏡で(」、試料1にエツチングを施
して表面観察をする場合に、試別1のエツチングおよび
表面観察か+′)t r−’r’よく行えるようにする
ために、走査型電子顕微鏡の筒状の試別室4に、ドライ
エツチング装置のエツチング室5が、イ」設されており
、画室4.5間には、画室を互いに連通あるい(J閉塞
するためのケートハルプロか介装されている。
In order to be able to perform the etching and surface observation of specimen 1 well with this scanning electron microscope ('', when performing etching on sample 1 and observing its surface, An etching chamber 5 of a dry etching device is installed in the cylindrical separation chamber 4 of the cylindrical electron microscope. It has been intervened.

エツチング室5には、従来のドライエツチング装置の上
ノヂノク室と同様に、フレオンなとのガスを導入するた
めのガス流路7と、高周波電力が印加される電極8と、
ガスを排気するための排気口9が設けられている。
The etching chamber 5 includes a gas passage 7 for introducing a gas such as freon, and an electrode 8 to which high-frequency power is applied, similar to the upper chamber of a conventional dry etching apparatus.
An exhaust port 9 is provided for exhausting gas.

次に、上記構成を有する走査型電子顕微鏡による表面観
察の際の操作手順を説明する。
Next, the operating procedure for surface observation using the scanning electron microscope having the above configuration will be explained.

先ず、従来の走査型電子顕微鏡と同様に、試別ステージ
10に、適宜の治具を用いて試別1を載置し、試料1表
面に、電子銃からの電子線へを対物レンズ2で絞って照
射し、試′#41表面から発生ずる二次電子を検出器3
で検出し、これに基づいて、図示しないブラウン管に作
像し、試料表面の観察を行う。
First, as in a conventional scanning electron microscope, sample 1 is placed on sample stage 10 using an appropriate jig, and an electron beam from an electron gun is directed onto the surface of sample 1 using objective lens 2. The secondary electrons generated from the surface of sample #41 are detected by the detector 3.
Based on this, an image is created on a cathode ray tube (not shown), and the sample surface is observed.

次に、試料表面のエツチングを行う場合に(j、予め真
空に保持されているエツチング室5内に、ゲートハルプ
ロを開いて適宜の治具を用いて試料1を移送し、ゲート
バルブ6を閉じてエツチング室5内にフレオンガスを流
すとともに、高周波電力を印加して試II 1表面のエ
ツチングを行う。
Next, when etching the surface of the sample (j), open the gate hull pro, transfer the sample 1 using an appropriate jig, and close the gate valve 6 into the etching chamber 5, which is previously kept in a vacuum. The etching chamber 5 is closed and Freon gas is allowed to flow into the etching chamber 5, and high frequency power is applied to perform etching on the surface of Test II 1.

エツチング終了後、フレオンガスを止めて残留ガスを排
気n 9より排気してゲートバルブにを開いて試料1を
治具によって試料室4に戻して表面の観察を行う。
After etching is completed, the Freon gas is stopped, the residual gas is exhausted through the exhaust n9, the gate valve is opened, and the sample 1 is returned to the sample chamber 4 using a jig, and the surface is observed.

このにうに走査型電子顕微鏡に、エツチング装置が一体
に設りられているので、試料の作成が従来例に比べて容
易になり、表面観察が効率よく行なわれることになる。
Since the etching device is now integrated into the scanning electron microscope, preparation of the sample becomes easier than in the prior art, and surface observation can be carried out more efficiently.

」二連の実施例では、走査型電子顕微鏡について説明し
たけれども、本発明は、走査型電子顕微鏡に限るもので
はなく、EPMAやその他の表面分析装置に同様に適用
できるものである。
Although the two series of embodiments describe a scanning electron microscope, the present invention is not limited to scanning electron microscopes, but is equally applicable to EPMA and other surface analysis instruments.

さらに、」二連の実施例では、エツチングのみを行うよ
うに構成したけれども、本発明の他の実施例として、金
属ターゲットを設けて蒸着を行えるように構成してもよ
い。
Further, although the two embodiments are configured to perform only etching, other embodiments of the present invention may be configured to provide a metal target and perform vapor deposition.

また、上述の実施例では、試料を、試料室4とエツチン
グ室5との間で治具を用いて手動操作で移送するように
したけれども、本発明の他の実施例として、搬送アーム
や搬送ローラなどの適宜の搬送手段を設けて自動的に移
送するようにしてもよい。
Furthermore, in the above-described embodiment, the sample was manually transferred between the sample chamber 4 and the etching chamber 5 using a jig. Appropriate conveying means such as rollers may be provided to automatically convey.

[発明の効果] 以上のように本発明によれば、表面分析装置の試料室に
、エツチング室がイ」設されるとともに、両室間にゲー
トバルブが介装されるので、試ネ」をエツチングする際
には、ゲートバルブを開いて試料を、試料室とエツチン
グ室との間で容易に移送できるので、エッチング装置が
表面分析装置と別に設げられている従来例に比べて試料
の作成および表面観察が効率よく行われることになる。
[Effects of the Invention] As described above, according to the present invention, an etching chamber is provided in the sample chamber of a surface analysis device, and a gate valve is interposed between the two chambers. When etching, the gate valve can be opened and the sample can be easily transferred between the sample chamber and the etching chamber. and surface observation can be performed efficiently.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の要部の概略構成図、第2図
は従来例の概略構成図である。 ■・試料、4 ・試料室、5 ・エツチング室、6ゲー
トバルブ。
FIG. 1 is a schematic diagram of the main parts of an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional example. ■・Sample, 4・Sample chamber, 5・Etching chamber, 6 Gate valve.

Claims (1)

【特許請求の範囲】[Claims] (1)試料表面に電子線あるいはX線を照射し、該試料
表面から発生する信号を検出して試料表面の分析を行う
表面分析装置において、 エッチング装置のエッチング室が、前記表面分析装置の
試料室に付設されるとともに、前記両室間にゲートバル
ブが介装されることを特徴とする表面分析装置。
(1) In a surface analyzer that analyzes the sample surface by irradiating the sample surface with electron beams or X-rays and detecting signals generated from the sample surface, the etching chamber of the etching apparatus A surface analysis device characterized in that the device is attached to a chamber and a gate valve is interposed between the two chambers.
JP63186110A 1988-07-25 1988-07-25 Surface analyzing apparatus Pending JPH0235344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63186110A JPH0235344A (en) 1988-07-25 1988-07-25 Surface analyzing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63186110A JPH0235344A (en) 1988-07-25 1988-07-25 Surface analyzing apparatus

Publications (1)

Publication Number Publication Date
JPH0235344A true JPH0235344A (en) 1990-02-05

Family

ID=16182535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63186110A Pending JPH0235344A (en) 1988-07-25 1988-07-25 Surface analyzing apparatus

Country Status (1)

Country Link
JP (1) JPH0235344A (en)

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