JPH02309358A - Positive type photosensitive resin composition - Google Patents
Positive type photosensitive resin compositionInfo
- Publication number
- JPH02309358A JPH02309358A JP1132126A JP13212689A JPH02309358A JP H02309358 A JPH02309358 A JP H02309358A JP 1132126 A JP1132126 A JP 1132126A JP 13212689 A JP13212689 A JP 13212689A JP H02309358 A JPH02309358 A JP H02309358A
- Authority
- JP
- Japan
- Prior art keywords
- butyl acrylate
- photosensitive resin
- resin composition
- acid
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims description 9
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000000178 monomer Substances 0.000 claims abstract description 9
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920006243 acrylic copolymer Polymers 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 8
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 8
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 abstract description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052753 mercury Inorganic materials 0.000 abstract description 5
- 239000004115 Sodium Silicate Substances 0.000 abstract description 4
- 235000019795 sodium metasilicate Nutrition 0.000 abstract description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052911 sodium silicate Inorganic materials 0.000 abstract description 4
- 150000007513 acids Chemical class 0.000 abstract description 3
- VUBUXALTYMBEQO-UHFFFAOYSA-N 2,2,3,3,3-pentafluoro-1-phenylpropan-1-one Chemical compound FC(F)(F)C(F)(F)C(=O)C1=CC=CC=C1 VUBUXALTYMBEQO-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000003786 synthesis reaction Methods 0.000 description 18
- -1 ketene compound Chemical class 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical compound CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- DPKHZNPWBDQZCN-UHFFFAOYSA-N acridine orange free base Chemical compound C1=CC(N(C)C)=CC2=NC3=CC(N(C)C)=CC=C3C=C21 DPKHZNPWBDQZCN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229940000489 arsenate Drugs 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- DETLSQFJIKIOJL-UHFFFAOYSA-N diphenyl-(4-thiophen-2-ylphenyl)sulfanium Chemical compound C1=CSC(C=2C=CC(=CC=2)[S+](C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 DETLSQFJIKIOJL-UHFFFAOYSA-N 0.000 description 1
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- MDKXBBPLEGPIRI-UHFFFAOYSA-N ethoxyethane;methanol Chemical compound OC.CCOCC MDKXBBPLEGPIRI-UHFFFAOYSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明はポジ型の感光性樹脂組成物に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a positive photosensitive resin composition.
(従来の技術)
感光性樹脂組成物はネガ型(光照射した部分が硬化する
もの)とポジ型(光照射した部分が現像液で溶出するも
の)との2種類がある。ポジ型はネガ型に比べて解像度
が高く、平版印刷やレジスト材料として広く用いられて
いる。(Prior Art) There are two types of photosensitive resin compositions: negative type (the area irradiated with light hardens) and positive type (the area irradiated with light dissolves in a developer). Positive type has higher resolution than negative type, and is widely used in lithographic printing and as a resist material.
このポジ型の感光性樹脂組成物としてはキノンジアジド
基が光で分解してケテン化合物を経てインデンカルボン
酸に変化する反応を利用するものか一般的である。この
発生したインデンカルボン酸基によりアルカリ水に溶出
可能になる。しかし、このキノンジアジドタイプのむの
は感度が低く、露光時間が長くなり、作業効率が悪い。This positive type photosensitive resin composition generally utilizes a reaction in which a quinone diazide group is decomposed by light and converted into an indenecarboxylic acid via a ketene compound. This generated indenecarboxylic acid group makes it possible to elute in alkaline water. However, this quinonediazide type has low sensitivity, long exposure time, and poor working efficiency.
特開昭59−45439号公報には光照射により酸を生
じる化合物とその酸により遊離のカルボン酸基を放出す
る重合体とを含むレジスト組成物が開示されている。JP-A-59-45439 discloses a resist composition containing a compound that generates an acid when irradiated with light and a polymer that releases free carboxylic acid groups when exposed to the acid.
(発明が解決しようとする課題)
本発明者等は上記特開昭59−45439号公報に記載
の組成物を検討したが、この公報に実際に開示されてい
るいずれの組成物ら印刷の用途に充分な程の感度を何し
ていないことか解った。本発明はこの組成物の改良を行
い、より感度の高い、印刷に使用し得る新たな組成物を
得ることを目的とする。(Problems to be Solved by the Invention) The present inventors have studied the compositions described in the above-mentioned Japanese Patent Application Laid-Open No. 59-45439, but none of the compositions actually disclosed in this publication have been used for printing purposes. I realized what I wasn't doing with enough sensitivity. The present invention aims to improve this composition and obtain a new composition that has higher sensitivity and can be used for printing.
(課題を解決するための手段)
即ち、本発明は
(a) t−ブチルアクリレートと他の酸に対して安定
なアクリルモノマーとからなり、t−ブチルアクリレー
トが全モノマー重量の30〜70重量%であるアクリル
共重合体、および
(b)活性光線の照射により酸を発生する化合物を含有
するポジ型感光性樹脂組成物を提供する。(Means for Solving the Problems) That is, the present invention consists of (a) t-butyl acrylate and an acrylic monomer stable against other acids, and t-butyl acrylate is 30 to 70% by weight of the total monomer weight. Provided is a positive photosensitive resin composition containing an acrylic copolymer having the following properties and (b) a compound that generates an acid upon irradiation with actinic rays.
本発明の組成物は254〜365nmの光に対して、特
開昭59−45439号公報記載の組成物に比べて約4
0倍以上感度が高く、印刷用に適している。特開昭59
−45439号の重合体は例えばポリ−(tert−ブ
チルメタクリレート)、即ちH,、c、旦号、1
のようにtert−ブチル基がペンダントするポリマー
骨格上のα−炭素原子に必ずメチル基Aを有している。The composition of the present invention has a light wavelength of 254 to 365 nm, compared to the composition described in JP-A-59-45439.
It has 0 times higher sensitivity and is suitable for printing. Japanese Unexamined Patent Publication 1983
The polymer of No. 45439 is, for example, poly-(tert-butyl methacrylate), that is, a methyl group A is always present on the α-carbon atom on the polymer backbone to which a tert-butyl group is pendant, as shown in have.
本発明のものはメチル基はなく、水素原子である。この
違いにより、約40倍以上もの高い感度が得られること
は全く予測し得ないことである。The compound of the present invention does not have a methyl group, but has a hydrogen atom. It is completely unexpected that this difference would result in a sensitivity that is approximately 40 times higher.
本発明のアクリル共重合体はt−ブチルアクリレートを
30〜70重屯%と他の酸に対して安定なアクリルモノ
マーを残量とからなる。(−ブチルアクリレートが30
〜70重量%の範囲外であると、感度が大巾に低下する
。t−ブチルアクリレートモノマーと共重合されろ酸に
安定なアクリルモノマーとしては、アクリル酸、メタク
リル酸、アクリル酸メヂル、アクリル酸エチル、メタク
リル酸メチル、メタクリル酸エチル、アクリル酸ブチル
、メタクリル酸ブチル、アクリル酸ヘキシル、アクリル
酸2エチルヘキシル、アクリル酸イソオクチル、メタク
リル酸ラウリル、アクリル酸2ヒドロキシエチル、メタ
クリル酸2ヒドロキシエチル、アクリル酸2−ヒドロキ
シプロピル、メタクリル酸2−ヒドロキンプロピルがあ
げられる。これらのモノマーの共重合は本質的に公知の
方法で実施される。例えば、適当な溶剤中でランカル重
合してらよい。The acrylic copolymer of the present invention consists of 30 to 70 weight percent t-butyl acrylate and the remaining amount of acrylic monomers that are stable against other acids. (-butyl acrylate is 30
If the amount is outside the range of 70% by weight, the sensitivity will be significantly reduced. Acrylic monomers copolymerized with t-butyl acrylate monomer and stable to filtrate include acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, methyl methacrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, and acrylic. Examples include hexyl acid, 2-ethylhexyl acrylate, isooctyl acrylate, lauryl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, and 2-hydroquinepropyl methacrylate. The copolymerization of these monomers is carried out in a manner known per se. For example, rancal polymerization may be performed in a suitable solvent.
活性光線の照射により酸を発生する化合物として、例え
ば、ジアゾニウム、スルホニウム、ホスホニウムおよび
ヨードニウムのS bF e”−、AsF 1l−1P
F、−1BF’、−等の塩があげられる。これらの化合
物の具体例として4−(ジ−n−プロピルアミノ)−ベ
ンゼゾノアゾニウムテトラフルオロボレート、4−p−
トリル−メルカプト−2,5−ジェトキシベンゼンジア
ゾニウムヘキサフルオロホスフェート、トリアリルスル
フオニウムテトラフルオロボレートおよびヘキサフルオ
ロアーセネート、トリアニシルスルホニウムテトラフル
オロアーセネート、ジフェニル(4−チオフェニルフェ
ニル)スルホニウムへキサフルオロアーセネート、ジフ
ェニルヨードニウムテトラフルオロボレートおよびヘキ
サフルオロアーセネート、ビス(p−クロロフェニル)
ヨードニウムテトラフルオロボレートおよびヘキサフル
オロアーセネートがある。酸を発生する化合物の量は全
組成中0,1〜50重量%、好ましくは0.2〜20重
量%である。0.2重量%より少ないと発生するプロト
ン(H+)が少いためエステル基の加水分解が十分に起
らない。20重量%より多いとアクリル共重合体との相
溶性が悪くなり長期の貯蔵において沈澱を生ずる。Examples of compounds that generate acid upon irradiation with actinic rays include diazonium, sulfonium, phosphonium, and iodonium S bFe''-, AsF 1l-1P
Examples include salts such as F, -1BF', and -. Specific examples of these compounds include 4-(di-n-propylamino)-benzezonoazonium tetrafluoroborate, 4-p-
Tolyl-mercapto-2,5-jethoxybenzenediazonium hexafluorophosphate, triallylsulfonium tetrafluoroborate and hexafluoroarsenate, trianisylsulfonium tetrafluoroarsenate, diphenyl(4-thiophenylphenyl)sulfonium hexafluoro Arsenate, diphenyliodonium tetrafluoroborate and hexafluoroarsenate, bis(p-chlorophenyl)
These include iodonium tetrafluoroborate and hexafluoroarsenate. The amount of acid-generating compounds is from 0.1 to 50% by weight, preferably from 0.2 to 20% by weight of the total composition. When the amount is less than 0.2% by weight, the amount of protons (H+) generated is small, so that sufficient hydrolysis of the ester group does not occur. If the amount exceeds 20% by weight, the compatibility with the acrylic copolymer becomes poor and precipitation occurs during long-term storage.
本発明の組成物はアクリル共重合体および酸発生化合物
をそのまま、または必要ならば溶媒中で、冷暗所で混合
する。使用し得る溶媒はケトン類、例えばアセトン、メ
チルエチルケトン、シクロヘキサノン等;エステル類、
例えば酢酸エチル、酢酸ブチル、エヂレングリノールア
セテート等;エーテル類、例えばテトラヒドロフラン、
ジオキサン等が挙げられる。The composition of the present invention is prepared by mixing the acrylic copolymer and the acid-generating compound, either as such or in a solvent if necessary, in a cool, dark place. Solvents that can be used include ketones such as acetone, methyl ethyl ketone, cyclohexanone, etc.; esters,
For example, ethyl acetate, butyl acetate, ethylene glycol acetate, etc.; ethers, such as tetrahydrofuran,
Examples include dioxane.
本発明の感光性樹脂組成物には、必要に応じて染料顔料
を増感の目的で加えてもよい。そのような染料および顔
料の例としてペリレン、ピレン、フェノデアジン、アン
トラセン、コロネン、1゜2−ベンズアントラセン等が
挙げられる。If necessary, a dye pigment may be added to the photosensitive resin composition of the present invention for the purpose of sensitization. Examples of such dyes and pigments include perylene, pyrene, phenodeazine, anthracene, coronene, 1°2-benzanthracene, and the like.
本発明のポジ型感光性樹脂組成物は支持体上に塗布乾燥
した後、ポジフィルムを用いて露光および現像する。塗
布は回転塗布、ワイヤーバー塗布、ディップ塗布、ロー
ル塗布の方法により行なわれる。感光層を光照射で可溶
化するのに使用する光源は、超高圧水銀灯、メタルハラ
イドランプ、キセノンランプ、低圧水銀灯等の光源があ
る。現像は水素アルカリ現像液、例えば水酸化ナトリウ
ム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、
メタケイ酸ナトリウム、メタケイ酸カリウム等を用いる
。このものの農産はo、t−to重亀%の範囲で用いる
。0.1重量%以下では溶出に時間がかかり10重量%
以上では残存膜に悪影響を与え又取扱いが困難となる。The positive photosensitive resin composition of the present invention is coated on a support and dried, then exposed and developed using a positive film. Coating is performed by spin coating, wire bar coating, dip coating, or roll coating. Light sources used to solubilize the photosensitive layer by light irradiation include ultra-high pressure mercury lamps, metal halide lamps, xenon lamps, low-pressure mercury lamps, and the like. For development, use a hydrogen-alkaline developer such as sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate,
Sodium metasilicate, potassium metasilicate, etc. are used. The agricultural product of this product is used in the range of o, t-to weight percent. If it is less than 0.1% by weight, it will take a long time to elute and 10% by weight.
Above this, the remaining film will be adversely affected and handling will become difficult.
(発明の効果)
本発明のポジ型感光性樹脂組成物は感度が高く、種々の
用途、特に印刷用に好適に用いられる。(Effects of the Invention) The positive photosensitive resin composition of the present invention has high sensitivity and is suitably used for various uses, particularly for printing.
(実施例)
本発明を実施例により更に詳細に説明する。本発明はこ
れら実施例に限定されない。(Example) The present invention will be explained in more detail with reference to Examples. The invention is not limited to these examples.
合成例1
0.5gのアゾビスイソブチロニトリルを含む50gの
キンシン中にアクリル酸第3ブチル15.Og、アクリ
ル酸第1ブチルおよびメタクリル酸メチル260gを加
え窒素気流中で60℃で10時間加熱撹拌を行った。冷
却後反応生成物をTHPで稀釈し石油エーテルを加えて
樹脂を析出させた。白色樹脂を石油エーテルメタノール
で洗浄した。Synthesis Example 1 Tert-butyl acrylate 15. After adding Og, 1-butyl acrylate and 260 g of methyl methacrylate, the mixture was heated and stirred at 60° C. for 10 hours in a nitrogen stream. After cooling, the reaction product was diluted with THP and petroleum ether was added to precipitate the resin. The white resin was washed with petroleum ether methanol.
重合体は20.6g(収率854%)および数平均分子
量(GPC)は51,000であった。The polymer was 20.6 g (854% yield) and had a number average molecular weight (GPC) of 51,000.
合成例2
アクリル酸第3ブチル25.Og、アクリル酸第1ブチ
ルI 5.0gおよびメタクリル酸メチル100gを用
いる以外は合成例1と同様に処理した。Synthesis Example 2 Tertiary butyl acrylate 25. The process was carried out in the same manner as in Synthesis Example 1, except that Og, 5.0 g of 1-butyl acrylate I, and 100 g of methyl methacrylate were used.
得られた重合体は21.6g(収率86.4%)、数平
均分子量(CI)C)46,000を有した。The obtained polymer had 21.6 g (86.4% yield) and a number average molecular weight (CI) of 46,000.
合成例3
アクリル酸第3ブチル35.Ogおよびアクリル酸第!
ブチル15.0gを用いる以外は合成例1と同様に処理
した。得られた重合体は21.5g(収率86.0%)
、数平均分子ff1(GPC)54,000であった。Synthesis Example 3 Tertiary butyl acrylate 35. Og and acrylic acid No.
The same procedure as in Synthesis Example 1 was carried out except that 15.0 g of butyl was used. The obtained polymer was 21.5g (yield 86.0%)
, number average molecular ff1 (GPC) was 54,000.
命財射±
アクリル酸第3ブチルlO,Og、アクリル酸第1ブチ
ルl 5.0gおよびメタクリル酸メチル300gを用
いる以外は合成例Iと同様に処理した。Treatment was carried out in the same manner as in Synthesis Example I except that tert-butyl acrylate lO,Og, 1-butyl acrylate l 5.0 g and methyl methacrylate 300 g were used.
得られた重合体は20.8g(収率83,4%)、数平
均分子量(GPC)、42.000であった。The obtained polymer was 20.8 g (yield 83.4%) and had a number average molecular weight (GPC) of 42.000.
合成例5
アクリル酸第3ブチル50.Ogを用いる以外は合成例
1と同様に処理した。得られた重合体は20.9g(収
率83.6%)、数平均分子量(G P C)39.0
00であった。Synthesis Example 5 Tertiary butyl acrylate 50. The process was carried out in the same manner as in Synthesis Example 1 except that Og was used. The obtained polymer was 20.9 g (yield 83.6%), number average molecular weight (G P C) 39.0
It was 00.
合成例6
メタクリル酸第3ブチル15.0g、アクリル酸第1ブ
チルl 5.Ogおよびメタクリル酸メチル20、Og
は合成例1と同様に処理した。得られた重合体は21.
3g(収率85%)、数平均分子量(GPC)36,0
00であった。Synthesis Example 6 15.0 g of tert-butyl methacrylate, 1-1 butyl acrylate 5. Og and methyl methacrylate 20, Og
was treated in the same manner as in Synthesis Example 1. The obtained polymer was 21.
3g (yield 85%), number average molecular weight (GPC) 36.0
It was 00.
実施例1
合成例・lの共重合体をT I(P中に固形物が20f
fiff1%になる様に溶解しトリフェニルスルフオニ
ウムへキサフルオロアーセネートを重合体に対して5重
量%加える。この溶液を金属支持体上にワイヤーバーに
より5.0μの厚さに塗布する。その後80℃で10分
間乾燥した。低圧水銀灯を光源として波長254nmの
光を石英マスクを経て10xJ/cta’露光した。更
に90℃で1分間加熱したあと1%メタケイ酸ソーダー
水溶液に20°Cで60秒現像することによりボッ型の
像を得た。Example 1 The copolymer of Synthesis Example 1 was TI (solid matter in P was 20f)
Fiff is dissolved to 1% and triphenylsulfonium hexafluoroarsenate is added in an amount of 5% by weight based on the polymer. This solution is coated onto a metal support with a wire bar to a thickness of 5.0 microns. Thereafter, it was dried at 80° C. for 10 minutes. Using a low-pressure mercury lamp as a light source, light with a wavelength of 254 nm was exposed through a quartz mask at 10xJ/cta'. After further heating at 90° C. for 1 minute, the film was developed in a 1% sodium metasilicate aqueous solution at 20° C. for 60 seconds to obtain a box-shaped image.
尖鬼劇主
合成例2の共重合体について実施例Iと同様の操作を実
施した。8rJ/cm”の露光および90℃で1分間加
熱てボッ型の象を得た。The same operations as in Example I were performed on the copolymer of Senkigeki Main Synthesis Example 2. Exposure to light of 8 rJ/cm'' and heating at 90° C. for 1 minute yielded a box-shaped elephant.
実施例3
合成例2の共重合体を’l’ I(F中に固形物か20
重量%になる様に溶解しジフェニルヨードニウムへキサ
フルオロアーセネートを重合体に対して5重里%および
アクリジンオレンジをlXl0−’Mを加える。この溶
液を金属支持体上に5.0μの厚さに塗布する。その後
80℃で10分間乾燥し、高圧水銀灯を光源として波長
365nI11の光をマスクを経て15zJ/am’露
光した。更に90°Cでl分間加熱したあと1%メタケ
イ酸ソーダー水溶液中に20℃で60秒現像することに
よりポジ型の像を得た。Example 3 The copolymer of Synthesis Example 2 was mixed with 'l' I (solid matter in F or 20
Dissolve diphenyliodonium hexafluoroarsenate in an amount of 5% by weight and add 1X10-'M of acridine orange to the polymer. This solution is coated onto a metal support to a thickness of 5.0 microns. Thereafter, it was dried at 80° C. for 10 minutes, and exposed to light with a wavelength of 365 nI11 at 15 zJ/am' through a mask using a high-pressure mercury lamp as a light source. After further heating at 90°C for 1 minute, a positive image was obtained by developing in a 1% sodium metasilicate aqueous solution at 20°C for 60 seconds.
実施例4
合成例3の共重合体について実施例1と同様の操作を実
施し、5xJ/cm’の露光および90℃で1分間加熱
することによりポジ型の像を得た。Example 4 The copolymer of Synthesis Example 3 was operated in the same manner as in Example 1, and a positive image was obtained by exposing it to 5 x J/cm' and heating at 90°C for 1 minute.
比較例1
合成例4の共重合体について実施例1と同様の操作を行
ったか、100iJ/c♂の光および90℃で1分間の
加熱を行ってら像を得ることはできなかった。Comparative Example 1 The copolymer of Synthesis Example 4 was subjected to the same operation as in Example 1, or an image could not be obtained even though it was heated with 100 iJ/c♂ light and 90° C. for 1 minute.
比較例2
合成例5の共重合体について実施例1と同様の操作を行
ったが、100xJ /cta”の光および90℃で1
分間の加熱を行っても像を得ることはできなかった。Comparative Example 2 The copolymer of Synthesis Example 5 was subjected to the same operation as in Example 1, except that the copolymer of Synthesis Example 5 was treated with 1
No image could be obtained even after heating for several minutes.
比較例3
合成例6の共重合体について実施例1と同様の操作を行
ったが、360ffJ/cm”の露光で150℃で2分
加熱することによりはじめてポジ型の像を得た。Comparative Example 3 The copolymer of Synthesis Example 6 was subjected to the same operation as in Example 1, but a positive image was obtained only by heating at 150° C. for 2 minutes with exposure of 360 ffJ/cm”.
Claims (1)
定なアクリルモノマーとからなり、 t−ブチルアクリレートが全モノマー重 量の30〜70重量%であるアクリル 共重合体、および (b)活性光線の照射により酸を発生する化合物 を含有するポジ型感光性樹脂組成物。[Claims] 1. (a) An acrylic copolymer consisting of t-butyl acrylate and another acid-stable acrylic monomer, in which t-butyl acrylate accounts for 30 to 70% by weight of the total monomer weight. , and (b) a positive photosensitive resin composition containing a compound that generates an acid upon irradiation with actinic rays.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1132126A JPH02309358A (en) | 1989-05-24 | 1989-05-24 | Positive type photosensitive resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1132126A JPH02309358A (en) | 1989-05-24 | 1989-05-24 | Positive type photosensitive resin composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02309358A true JPH02309358A (en) | 1990-12-25 |
Family
ID=15074012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1132126A Pending JPH02309358A (en) | 1989-05-24 | 1989-05-24 | Positive type photosensitive resin composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02309358A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03113449A (en) * | 1989-09-27 | 1991-05-14 | Agency Of Ind Science & Technol | Resin composition sensitive to visible light |
JPH04158363A (en) * | 1990-10-22 | 1992-06-01 | Mitsubishi Electric Corp | Pattern forming resist material |
JPH04226461A (en) * | 1990-04-24 | 1992-08-17 | Internatl Business Mach Corp <Ibm> | Photoresist composition in liquid application type which can undergo water processing |
JPH04230758A (en) * | 1990-04-24 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Dry-film type photoresist composition which can undergo water processing |
EP0523245A1 (en) * | 1991-02-01 | 1993-01-20 | Nippon Paint Co., Ltd. | Method for manufacturing multiple color display device |
JPH06317907A (en) * | 1993-04-02 | 1994-11-15 | Internatl Business Mach Corp <Ibm> | Positive photosensitive resist composition and formation method of pattern of copper-contained layer using it |
WO1999009457A1 (en) * | 1997-08-14 | 1999-02-25 | Showa Denko K.K. | Resist resin, resist resin composition, and process for patterning therewith |
GR1003421B (en) * | 1999-05-26 | 2000-09-01 | Biocompatible lithographic processes and materials for patterning of biomolecules | |
KR100598910B1 (en) * | 2004-09-24 | 2006-07-10 | 주식회사 아이노스 | Photoresist layer-coating polymer, nonionic photo acid generator, and photoresist layer-coating composition including the same |
US7608389B2 (en) * | 2001-05-31 | 2009-10-27 | National Centre For Scientific Research Demokritos | Photoresists processable under biocompatible conditions for multi-biomolecule patterning |
JP2013232016A (en) * | 1999-02-20 | 2013-11-14 | Rohm & Haas Electronic Materials Llc | Photoresist composition containing blend of photoacid generator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0296757A (en) * | 1988-10-03 | 1990-04-09 | Mitsubishi Kasei Corp | Photosensitive planographic printing plate |
-
1989
- 1989-05-24 JP JP1132126A patent/JPH02309358A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0296757A (en) * | 1988-10-03 | 1990-04-09 | Mitsubishi Kasei Corp | Photosensitive planographic printing plate |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03113449A (en) * | 1989-09-27 | 1991-05-14 | Agency Of Ind Science & Technol | Resin composition sensitive to visible light |
JPH04226461A (en) * | 1990-04-24 | 1992-08-17 | Internatl Business Mach Corp <Ibm> | Photoresist composition in liquid application type which can undergo water processing |
JPH04230758A (en) * | 1990-04-24 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Dry-film type photoresist composition which can undergo water processing |
JPH04158363A (en) * | 1990-10-22 | 1992-06-01 | Mitsubishi Electric Corp | Pattern forming resist material |
EP0523245B1 (en) * | 1991-02-01 | 1996-07-17 | Nippon Paint Co., Ltd. | Method for manufacturing multiple color display device |
EP0523245A1 (en) * | 1991-02-01 | 1993-01-20 | Nippon Paint Co., Ltd. | Method for manufacturing multiple color display device |
JPH06317907A (en) * | 1993-04-02 | 1994-11-15 | Internatl Business Mach Corp <Ibm> | Positive photosensitive resist composition and formation method of pattern of copper-contained layer using it |
WO1999009457A1 (en) * | 1997-08-14 | 1999-02-25 | Showa Denko K.K. | Resist resin, resist resin composition, and process for patterning therewith |
US6303268B1 (en) | 1997-08-14 | 2001-10-16 | Showa Denko K.K. | Resist resin, resist resin composition and method of forming pattern using resist resin and resist resin composition |
JP2013232016A (en) * | 1999-02-20 | 2013-11-14 | Rohm & Haas Electronic Materials Llc | Photoresist composition containing blend of photoacid generator |
GR1003421B (en) * | 1999-05-26 | 2000-09-01 | Biocompatible lithographic processes and materials for patterning of biomolecules | |
US7608389B2 (en) * | 2001-05-31 | 2009-10-27 | National Centre For Scientific Research Demokritos | Photoresists processable under biocompatible conditions for multi-biomolecule patterning |
KR100598910B1 (en) * | 2004-09-24 | 2006-07-10 | 주식회사 아이노스 | Photoresist layer-coating polymer, nonionic photo acid generator, and photoresist layer-coating composition including the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4939070A (en) | Thermally stable photoresists with high sensitivity | |
JP3876571B2 (en) | Chemically amplified positive resist composition | |
CA1308594C (en) | Thermally stable photoresists with high sensitivity | |
JP3980124B2 (en) | New bissulfonyldiazomethane | |
TW520463B (en) | A chemical amplifying type positive resist composition | |
JP4453138B2 (en) | Chemically amplified positive resist composition | |
TWI296736B (en) | Chemical amplification type positive resist composition | |
JP3738562B2 (en) | Chemically amplified positive resist composition | |
JP2625014B2 (en) | Radiation-sensitive mixture and method for producing relief pattern | |
JP5001541B2 (en) | Copolymers and compositions for semiconductor lithography | |
JP2001215704A (en) | Chemical amplification type positive resist composition | |
JPH09216867A (en) | N-vinyllactam derivative, its polymer and photoresist containing the same polymer | |
JP2002363225A (en) | Polymer for chemically amplified resist and chemically amplified resist composition containing the same | |
JP2000103819A (en) | Polymer for production of chemically amplified resist and resist composition containing the same | |
JP2000227658A (en) | Chemically sensitized positive resist composition | |
JP3972438B2 (en) | Chemically amplified positive resist composition | |
JPH02309358A (en) | Positive type photosensitive resin composition | |
JP2004004669A (en) | Positive chemically amplified resist composition | |
JP4268249B2 (en) | Copolymer resin and manufacturing method thereof, photoresist and manufacturing method thereof, and semiconductor element | |
JP4040537B2 (en) | Negative resist composition and resist pattern forming method using the same | |
JP2001027806A (en) | Chemical amplification type resist composition and resist pattern forming method | |
JPH1130865A (en) | Radiation-sensitive resin composition | |
JP2825543B2 (en) | Negative radiation sensitive resin composition | |
JP2002296783A (en) | Chemical amplification type positive resist composition | |
JPH0488346A (en) | Resist composition |