JPH02309358A - Positive type photosensitive resin composition - Google Patents

Positive type photosensitive resin composition

Info

Publication number
JPH02309358A
JPH02309358A JP1132126A JP13212689A JPH02309358A JP H02309358 A JPH02309358 A JP H02309358A JP 1132126 A JP1132126 A JP 1132126A JP 13212689 A JP13212689 A JP 13212689A JP H02309358 A JPH02309358 A JP H02309358A
Authority
JP
Japan
Prior art keywords
butyl acrylate
photosensitive resin
resin composition
acid
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1132126A
Other languages
Japanese (ja)
Inventor
Katsutoshi Hiragori
平郡 勝利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Paint Co Ltd
Original Assignee
Nippon Paint Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Paint Co Ltd filed Critical Nippon Paint Co Ltd
Priority to JP1132126A priority Critical patent/JPH02309358A/en
Publication of JPH02309358A publication Critical patent/JPH02309358A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the sensitivity of a compsn. by using a specified acrylic copolymer. CONSTITUTION:This compsn. contains an acrylic copolymer consisting of 30-70 wt.% t-butyl acrylate and other acrylic monomer (A) stable to acids and a compd. (B) generating an acid when irradiated with rays of active light. A combination of n-butyl acrylate with methyl methacrylate may be used as the component A, triphenylsulfonium hexafluoro arsenate as the component B and a desired dye may be added to this compsn. A mercury lamp may be used as a light source and an aq. soln. of sodium metasilicate as a developing soln.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はポジ型の感光性樹脂組成物に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a positive photosensitive resin composition.

(従来の技術) 感光性樹脂組成物はネガ型(光照射した部分が硬化する
もの)とポジ型(光照射した部分が現像液で溶出するも
の)との2種類がある。ポジ型はネガ型に比べて解像度
が高く、平版印刷やレジスト材料として広く用いられて
いる。
(Prior Art) There are two types of photosensitive resin compositions: negative type (the area irradiated with light hardens) and positive type (the area irradiated with light dissolves in a developer). Positive type has higher resolution than negative type, and is widely used in lithographic printing and as a resist material.

このポジ型の感光性樹脂組成物としてはキノンジアジド
基が光で分解してケテン化合物を経てインデンカルボン
酸に変化する反応を利用するものか一般的である。この
発生したインデンカルボン酸基によりアルカリ水に溶出
可能になる。しかし、このキノンジアジドタイプのむの
は感度が低く、露光時間が長くなり、作業効率が悪い。
This positive type photosensitive resin composition generally utilizes a reaction in which a quinone diazide group is decomposed by light and converted into an indenecarboxylic acid via a ketene compound. This generated indenecarboxylic acid group makes it possible to elute in alkaline water. However, this quinonediazide type has low sensitivity, long exposure time, and poor working efficiency.

特開昭59−45439号公報には光照射により酸を生
じる化合物とその酸により遊離のカルボン酸基を放出す
る重合体とを含むレジスト組成物が開示されている。
JP-A-59-45439 discloses a resist composition containing a compound that generates an acid when irradiated with light and a polymer that releases free carboxylic acid groups when exposed to the acid.

(発明が解決しようとする課題) 本発明者等は上記特開昭59−45439号公報に記載
の組成物を検討したが、この公報に実際に開示されてい
るいずれの組成物ら印刷の用途に充分な程の感度を何し
ていないことか解った。本発明はこの組成物の改良を行
い、より感度の高い、印刷に使用し得る新たな組成物を
得ることを目的とする。
(Problems to be Solved by the Invention) The present inventors have studied the compositions described in the above-mentioned Japanese Patent Application Laid-Open No. 59-45439, but none of the compositions actually disclosed in this publication have been used for printing purposes. I realized what I wasn't doing with enough sensitivity. The present invention aims to improve this composition and obtain a new composition that has higher sensitivity and can be used for printing.

(課題を解決するための手段) 即ち、本発明は (a) t−ブチルアクリレートと他の酸に対して安定
なアクリルモノマーとからなり、t−ブチルアクリレー
トが全モノマー重量の30〜70重量%であるアクリル
共重合体、および (b)活性光線の照射により酸を発生する化合物を含有
するポジ型感光性樹脂組成物を提供する。
(Means for Solving the Problems) That is, the present invention consists of (a) t-butyl acrylate and an acrylic monomer stable against other acids, and t-butyl acrylate is 30 to 70% by weight of the total monomer weight. Provided is a positive photosensitive resin composition containing an acrylic copolymer having the following properties and (b) a compound that generates an acid upon irradiation with actinic rays.

本発明の組成物は254〜365nmの光に対して、特
開昭59−45439号公報記載の組成物に比べて約4
0倍以上感度が高く、印刷用に適している。特開昭59
−45439号の重合体は例えばポリ−(tert−ブ
チルメタクリレート)、即ちH,、c、旦号、1 のようにtert−ブチル基がペンダントするポリマー
骨格上のα−炭素原子に必ずメチル基Aを有している。
The composition of the present invention has a light wavelength of 254 to 365 nm, compared to the composition described in JP-A-59-45439.
It has 0 times higher sensitivity and is suitable for printing. Japanese Unexamined Patent Publication 1983
The polymer of No. 45439 is, for example, poly-(tert-butyl methacrylate), that is, a methyl group A is always present on the α-carbon atom on the polymer backbone to which a tert-butyl group is pendant, as shown in have.

本発明のものはメチル基はなく、水素原子である。この
違いにより、約40倍以上もの高い感度が得られること
は全く予測し得ないことである。
The compound of the present invention does not have a methyl group, but has a hydrogen atom. It is completely unexpected that this difference would result in a sensitivity that is approximately 40 times higher.

本発明のアクリル共重合体はt−ブチルアクリレートを
30〜70重屯%と他の酸に対して安定なアクリルモノ
マーを残量とからなる。(−ブチルアクリレートが30
〜70重量%の範囲外であると、感度が大巾に低下する
。t−ブチルアクリレートモノマーと共重合されろ酸に
安定なアクリルモノマーとしては、アクリル酸、メタク
リル酸、アクリル酸メヂル、アクリル酸エチル、メタク
リル酸メチル、メタクリル酸エチル、アクリル酸ブチル
、メタクリル酸ブチル、アクリル酸ヘキシル、アクリル
酸2エチルヘキシル、アクリル酸イソオクチル、メタク
リル酸ラウリル、アクリル酸2ヒドロキシエチル、メタ
クリル酸2ヒドロキシエチル、アクリル酸2−ヒドロキ
シプロピル、メタクリル酸2−ヒドロキンプロピルがあ
げられる。これらのモノマーの共重合は本質的に公知の
方法で実施される。例えば、適当な溶剤中でランカル重
合してらよい。
The acrylic copolymer of the present invention consists of 30 to 70 weight percent t-butyl acrylate and the remaining amount of acrylic monomers that are stable against other acids. (-butyl acrylate is 30
If the amount is outside the range of 70% by weight, the sensitivity will be significantly reduced. Acrylic monomers copolymerized with t-butyl acrylate monomer and stable to filtrate include acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, methyl methacrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, and acrylic. Examples include hexyl acid, 2-ethylhexyl acrylate, isooctyl acrylate, lauryl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, and 2-hydroquinepropyl methacrylate. The copolymerization of these monomers is carried out in a manner known per se. For example, rancal polymerization may be performed in a suitable solvent.

活性光線の照射により酸を発生する化合物として、例え
ば、ジアゾニウム、スルホニウム、ホスホニウムおよび
ヨードニウムのS bF e”−、AsF 1l−1P
F、−1BF’、−等の塩があげられる。これらの化合
物の具体例として4−(ジ−n−プロピルアミノ)−ベ
ンゼゾノアゾニウムテトラフルオロボレート、4−p−
トリル−メルカプト−2,5−ジェトキシベンゼンジア
ゾニウムヘキサフルオロホスフェート、トリアリルスル
フオニウムテトラフルオロボレートおよびヘキサフルオ
ロアーセネート、トリアニシルスルホニウムテトラフル
オロアーセネート、ジフェニル(4−チオフェニルフェ
ニル)スルホニウムへキサフルオロアーセネート、ジフ
ェニルヨードニウムテトラフルオロボレートおよびヘキ
サフルオロアーセネート、ビス(p−クロロフェニル)
ヨードニウムテトラフルオロボレートおよびヘキサフル
オロアーセネートがある。酸を発生する化合物の量は全
組成中0,1〜50重量%、好ましくは0.2〜20重
量%である。0.2重量%より少ないと発生するプロト
ン(H+)が少いためエステル基の加水分解が十分に起
らない。20重量%より多いとアクリル共重合体との相
溶性が悪くなり長期の貯蔵において沈澱を生ずる。
Examples of compounds that generate acid upon irradiation with actinic rays include diazonium, sulfonium, phosphonium, and iodonium S bFe''-, AsF 1l-1P
Examples include salts such as F, -1BF', and -. Specific examples of these compounds include 4-(di-n-propylamino)-benzezonoazonium tetrafluoroborate, 4-p-
Tolyl-mercapto-2,5-jethoxybenzenediazonium hexafluorophosphate, triallylsulfonium tetrafluoroborate and hexafluoroarsenate, trianisylsulfonium tetrafluoroarsenate, diphenyl(4-thiophenylphenyl)sulfonium hexafluoro Arsenate, diphenyliodonium tetrafluoroborate and hexafluoroarsenate, bis(p-chlorophenyl)
These include iodonium tetrafluoroborate and hexafluoroarsenate. The amount of acid-generating compounds is from 0.1 to 50% by weight, preferably from 0.2 to 20% by weight of the total composition. When the amount is less than 0.2% by weight, the amount of protons (H+) generated is small, so that sufficient hydrolysis of the ester group does not occur. If the amount exceeds 20% by weight, the compatibility with the acrylic copolymer becomes poor and precipitation occurs during long-term storage.

本発明の組成物はアクリル共重合体および酸発生化合物
をそのまま、または必要ならば溶媒中で、冷暗所で混合
する。使用し得る溶媒はケトン類、例えばアセトン、メ
チルエチルケトン、シクロヘキサノン等;エステル類、
例えば酢酸エチル、酢酸ブチル、エヂレングリノールア
セテート等;エーテル類、例えばテトラヒドロフラン、
ジオキサン等が挙げられる。
The composition of the present invention is prepared by mixing the acrylic copolymer and the acid-generating compound, either as such or in a solvent if necessary, in a cool, dark place. Solvents that can be used include ketones such as acetone, methyl ethyl ketone, cyclohexanone, etc.; esters,
For example, ethyl acetate, butyl acetate, ethylene glycol acetate, etc.; ethers, such as tetrahydrofuran,
Examples include dioxane.

本発明の感光性樹脂組成物には、必要に応じて染料顔料
を増感の目的で加えてもよい。そのような染料および顔
料の例としてペリレン、ピレン、フェノデアジン、アン
トラセン、コロネン、1゜2−ベンズアントラセン等が
挙げられる。
If necessary, a dye pigment may be added to the photosensitive resin composition of the present invention for the purpose of sensitization. Examples of such dyes and pigments include perylene, pyrene, phenodeazine, anthracene, coronene, 1°2-benzanthracene, and the like.

本発明のポジ型感光性樹脂組成物は支持体上に塗布乾燥
した後、ポジフィルムを用いて露光および現像する。塗
布は回転塗布、ワイヤーバー塗布、ディップ塗布、ロー
ル塗布の方法により行なわれる。感光層を光照射で可溶
化するのに使用する光源は、超高圧水銀灯、メタルハラ
イドランプ、キセノンランプ、低圧水銀灯等の光源があ
る。現像は水素アルカリ現像液、例えば水酸化ナトリウ
ム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、
メタケイ酸ナトリウム、メタケイ酸カリウム等を用いる
。このものの農産はo、t−to重亀%の範囲で用いる
。0.1重量%以下では溶出に時間がかかり10重量%
以上では残存膜に悪影響を与え又取扱いが困難となる。
The positive photosensitive resin composition of the present invention is coated on a support and dried, then exposed and developed using a positive film. Coating is performed by spin coating, wire bar coating, dip coating, or roll coating. Light sources used to solubilize the photosensitive layer by light irradiation include ultra-high pressure mercury lamps, metal halide lamps, xenon lamps, low-pressure mercury lamps, and the like. For development, use a hydrogen-alkaline developer such as sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate,
Sodium metasilicate, potassium metasilicate, etc. are used. The agricultural product of this product is used in the range of o, t-to weight percent. If it is less than 0.1% by weight, it will take a long time to elute and 10% by weight.
Above this, the remaining film will be adversely affected and handling will become difficult.

(発明の効果) 本発明のポジ型感光性樹脂組成物は感度が高く、種々の
用途、特に印刷用に好適に用いられる。
(Effects of the Invention) The positive photosensitive resin composition of the present invention has high sensitivity and is suitably used for various uses, particularly for printing.

(実施例) 本発明を実施例により更に詳細に説明する。本発明はこ
れら実施例に限定されない。
(Example) The present invention will be explained in more detail with reference to Examples. The invention is not limited to these examples.

合成例1 0.5gのアゾビスイソブチロニトリルを含む50gの
キンシン中にアクリル酸第3ブチル15.Og、アクリ
ル酸第1ブチルおよびメタクリル酸メチル260gを加
え窒素気流中で60℃で10時間加熱撹拌を行った。冷
却後反応生成物をTHPで稀釈し石油エーテルを加えて
樹脂を析出させた。白色樹脂を石油エーテルメタノール
で洗浄した。
Synthesis Example 1 Tert-butyl acrylate 15. After adding Og, 1-butyl acrylate and 260 g of methyl methacrylate, the mixture was heated and stirred at 60° C. for 10 hours in a nitrogen stream. After cooling, the reaction product was diluted with THP and petroleum ether was added to precipitate the resin. The white resin was washed with petroleum ether methanol.

重合体は20.6g(収率854%)および数平均分子
量(GPC)は51,000であった。
The polymer was 20.6 g (854% yield) and had a number average molecular weight (GPC) of 51,000.

合成例2 アクリル酸第3ブチル25.Og、アクリル酸第1ブチ
ルI 5.0gおよびメタクリル酸メチル100gを用
いる以外は合成例1と同様に処理した。
Synthesis Example 2 Tertiary butyl acrylate 25. The process was carried out in the same manner as in Synthesis Example 1, except that Og, 5.0 g of 1-butyl acrylate I, and 100 g of methyl methacrylate were used.

得られた重合体は21.6g(収率86.4%)、数平
均分子量(CI)C)46,000を有した。
The obtained polymer had 21.6 g (86.4% yield) and a number average molecular weight (CI) of 46,000.

合成例3 アクリル酸第3ブチル35.Ogおよびアクリル酸第!
ブチル15.0gを用いる以外は合成例1と同様に処理
した。得られた重合体は21.5g(収率86.0%)
、数平均分子ff1(GPC)54,000であった。
Synthesis Example 3 Tertiary butyl acrylate 35. Og and acrylic acid No.
The same procedure as in Synthesis Example 1 was carried out except that 15.0 g of butyl was used. The obtained polymer was 21.5g (yield 86.0%)
, number average molecular ff1 (GPC) was 54,000.

命財射± アクリル酸第3ブチルlO,Og、アクリル酸第1ブチ
ルl 5.0gおよびメタクリル酸メチル300gを用
いる以外は合成例Iと同様に処理した。
Treatment was carried out in the same manner as in Synthesis Example I except that tert-butyl acrylate lO,Og, 1-butyl acrylate l 5.0 g and methyl methacrylate 300 g were used.

得られた重合体は20.8g(収率83,4%)、数平
均分子量(GPC)、42.000であった。
The obtained polymer was 20.8 g (yield 83.4%) and had a number average molecular weight (GPC) of 42.000.

合成例5 アクリル酸第3ブチル50.Ogを用いる以外は合成例
1と同様に処理した。得られた重合体は20.9g(収
率83.6%)、数平均分子量(G P C)39.0
00であった。
Synthesis Example 5 Tertiary butyl acrylate 50. The process was carried out in the same manner as in Synthesis Example 1 except that Og was used. The obtained polymer was 20.9 g (yield 83.6%), number average molecular weight (G P C) 39.0
It was 00.

合成例6 メタクリル酸第3ブチル15.0g、アクリル酸第1ブ
チルl 5.Ogおよびメタクリル酸メチル20、Og
は合成例1と同様に処理した。得られた重合体は21.
3g(収率85%)、数平均分子量(GPC)36,0
00であった。
Synthesis Example 6 15.0 g of tert-butyl methacrylate, 1-1 butyl acrylate 5. Og and methyl methacrylate 20, Og
was treated in the same manner as in Synthesis Example 1. The obtained polymer was 21.
3g (yield 85%), number average molecular weight (GPC) 36.0
It was 00.

実施例1 合成例・lの共重合体をT I(P中に固形物が20f
fiff1%になる様に溶解しトリフェニルスルフオニ
ウムへキサフルオロアーセネートを重合体に対して5重
量%加える。この溶液を金属支持体上にワイヤーバーに
より5.0μの厚さに塗布する。その後80℃で10分
間乾燥した。低圧水銀灯を光源として波長254nmの
光を石英マスクを経て10xJ/cta’露光した。更
に90℃で1分間加熱したあと1%メタケイ酸ソーダー
水溶液に20°Cで60秒現像することによりボッ型の
像を得た。
Example 1 The copolymer of Synthesis Example 1 was TI (solid matter in P was 20f)
Fiff is dissolved to 1% and triphenylsulfonium hexafluoroarsenate is added in an amount of 5% by weight based on the polymer. This solution is coated onto a metal support with a wire bar to a thickness of 5.0 microns. Thereafter, it was dried at 80° C. for 10 minutes. Using a low-pressure mercury lamp as a light source, light with a wavelength of 254 nm was exposed through a quartz mask at 10xJ/cta'. After further heating at 90° C. for 1 minute, the film was developed in a 1% sodium metasilicate aqueous solution at 20° C. for 60 seconds to obtain a box-shaped image.

尖鬼劇主 合成例2の共重合体について実施例Iと同様の操作を実
施した。8rJ/cm”の露光および90℃で1分間加
熱てボッ型の象を得た。
The same operations as in Example I were performed on the copolymer of Senkigeki Main Synthesis Example 2. Exposure to light of 8 rJ/cm'' and heating at 90° C. for 1 minute yielded a box-shaped elephant.

実施例3 合成例2の共重合体を’l’ I(F中に固形物か20
重量%になる様に溶解しジフェニルヨードニウムへキサ
フルオロアーセネートを重合体に対して5重里%および
アクリジンオレンジをlXl0−’Mを加える。この溶
液を金属支持体上に5.0μの厚さに塗布する。その後
80℃で10分間乾燥し、高圧水銀灯を光源として波長
365nI11の光をマスクを経て15zJ/am’露
光した。更に90°Cでl分間加熱したあと1%メタケ
イ酸ソーダー水溶液中に20℃で60秒現像することに
よりポジ型の像を得た。
Example 3 The copolymer of Synthesis Example 2 was mixed with 'l' I (solid matter in F or 20
Dissolve diphenyliodonium hexafluoroarsenate in an amount of 5% by weight and add 1X10-'M of acridine orange to the polymer. This solution is coated onto a metal support to a thickness of 5.0 microns. Thereafter, it was dried at 80° C. for 10 minutes, and exposed to light with a wavelength of 365 nI11 at 15 zJ/am' through a mask using a high-pressure mercury lamp as a light source. After further heating at 90°C for 1 minute, a positive image was obtained by developing in a 1% sodium metasilicate aqueous solution at 20°C for 60 seconds.

実施例4 合成例3の共重合体について実施例1と同様の操作を実
施し、5xJ/cm’の露光および90℃で1分間加熱
することによりポジ型の像を得た。
Example 4 The copolymer of Synthesis Example 3 was operated in the same manner as in Example 1, and a positive image was obtained by exposing it to 5 x J/cm' and heating at 90°C for 1 minute.

比較例1 合成例4の共重合体について実施例1と同様の操作を行
ったか、100iJ/c♂の光および90℃で1分間の
加熱を行ってら像を得ることはできなかった。
Comparative Example 1 The copolymer of Synthesis Example 4 was subjected to the same operation as in Example 1, or an image could not be obtained even though it was heated with 100 iJ/c♂ light and 90° C. for 1 minute.

比較例2 合成例5の共重合体について実施例1と同様の操作を行
ったが、100xJ /cta”の光および90℃で1
分間の加熱を行っても像を得ることはできなかった。
Comparative Example 2 The copolymer of Synthesis Example 5 was subjected to the same operation as in Example 1, except that the copolymer of Synthesis Example 5 was treated with 1
No image could be obtained even after heating for several minutes.

比較例3 合成例6の共重合体について実施例1と同様の操作を行
ったが、360ffJ/cm”の露光で150℃で2分
加熱することによりはじめてポジ型の像を得た。
Comparative Example 3 The copolymer of Synthesis Example 6 was subjected to the same operation as in Example 1, but a positive image was obtained only by heating at 150° C. for 2 minutes with exposure of 360 ffJ/cm”.

Claims (1)

【特許請求の範囲】 1、(a)t−ブチルアクリレートと他の酸に対して安
定なアクリルモノマーとからなり、 t−ブチルアクリレートが全モノマー重 量の30〜70重量%であるアクリル 共重合体、および (b)活性光線の照射により酸を発生する化合物 を含有するポジ型感光性樹脂組成物。
[Claims] 1. (a) An acrylic copolymer consisting of t-butyl acrylate and another acid-stable acrylic monomer, in which t-butyl acrylate accounts for 30 to 70% by weight of the total monomer weight. , and (b) a positive photosensitive resin composition containing a compound that generates an acid upon irradiation with actinic rays.
JP1132126A 1989-05-24 1989-05-24 Positive type photosensitive resin composition Pending JPH02309358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1132126A JPH02309358A (en) 1989-05-24 1989-05-24 Positive type photosensitive resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1132126A JPH02309358A (en) 1989-05-24 1989-05-24 Positive type photosensitive resin composition

Publications (1)

Publication Number Publication Date
JPH02309358A true JPH02309358A (en) 1990-12-25

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JP1132126A Pending JPH02309358A (en) 1989-05-24 1989-05-24 Positive type photosensitive resin composition

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03113449A (en) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol Resin composition sensitive to visible light
JPH04158363A (en) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp Pattern forming resist material
JPH04226461A (en) * 1990-04-24 1992-08-17 Internatl Business Mach Corp <Ibm> Photoresist composition in liquid application type which can undergo water processing
JPH04230758A (en) * 1990-04-24 1992-08-19 Internatl Business Mach Corp <Ibm> Dry-film type photoresist composition which can undergo water processing
EP0523245A1 (en) * 1991-02-01 1993-01-20 Nippon Paint Co., Ltd. Method for manufacturing multiple color display device
JPH06317907A (en) * 1993-04-02 1994-11-15 Internatl Business Mach Corp <Ibm> Positive photosensitive resist composition and formation method of pattern of copper-contained layer using it
WO1999009457A1 (en) * 1997-08-14 1999-02-25 Showa Denko K.K. Resist resin, resist resin composition, and process for patterning therewith
GR1003421B (en) * 1999-05-26 2000-09-01 Biocompatible lithographic processes and materials for patterning of biomolecules
KR100598910B1 (en) * 2004-09-24 2006-07-10 주식회사 아이노스 Photoresist layer-coating polymer, nonionic photo acid generator, and photoresist layer-coating composition including the same
US7608389B2 (en) * 2001-05-31 2009-10-27 National Centre For Scientific Research Demokritos Photoresists processable under biocompatible conditions for multi-biomolecule patterning
JP2013232016A (en) * 1999-02-20 2013-11-14 Rohm & Haas Electronic Materials Llc Photoresist composition containing blend of photoacid generator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0296757A (en) * 1988-10-03 1990-04-09 Mitsubishi Kasei Corp Photosensitive planographic printing plate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0296757A (en) * 1988-10-03 1990-04-09 Mitsubishi Kasei Corp Photosensitive planographic printing plate

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03113449A (en) * 1989-09-27 1991-05-14 Agency Of Ind Science & Technol Resin composition sensitive to visible light
JPH04226461A (en) * 1990-04-24 1992-08-17 Internatl Business Mach Corp <Ibm> Photoresist composition in liquid application type which can undergo water processing
JPH04230758A (en) * 1990-04-24 1992-08-19 Internatl Business Mach Corp <Ibm> Dry-film type photoresist composition which can undergo water processing
JPH04158363A (en) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp Pattern forming resist material
EP0523245B1 (en) * 1991-02-01 1996-07-17 Nippon Paint Co., Ltd. Method for manufacturing multiple color display device
EP0523245A1 (en) * 1991-02-01 1993-01-20 Nippon Paint Co., Ltd. Method for manufacturing multiple color display device
JPH06317907A (en) * 1993-04-02 1994-11-15 Internatl Business Mach Corp <Ibm> Positive photosensitive resist composition and formation method of pattern of copper-contained layer using it
WO1999009457A1 (en) * 1997-08-14 1999-02-25 Showa Denko K.K. Resist resin, resist resin composition, and process for patterning therewith
US6303268B1 (en) 1997-08-14 2001-10-16 Showa Denko K.K. Resist resin, resist resin composition and method of forming pattern using resist resin and resist resin composition
JP2013232016A (en) * 1999-02-20 2013-11-14 Rohm & Haas Electronic Materials Llc Photoresist composition containing blend of photoacid generator
GR1003421B (en) * 1999-05-26 2000-09-01 Biocompatible lithographic processes and materials for patterning of biomolecules
US7608389B2 (en) * 2001-05-31 2009-10-27 National Centre For Scientific Research Demokritos Photoresists processable under biocompatible conditions for multi-biomolecule patterning
KR100598910B1 (en) * 2004-09-24 2006-07-10 주식회사 아이노스 Photoresist layer-coating polymer, nonionic photo acid generator, and photoresist layer-coating composition including the same

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