JPH0230739Y2 - - Google Patents
Info
- Publication number
- JPH0230739Y2 JPH0230739Y2 JP1982098990U JP9899082U JPH0230739Y2 JP H0230739 Y2 JPH0230739 Y2 JP H0230739Y2 JP 1982098990 U JP1982098990 U JP 1982098990U JP 9899082 U JP9899082 U JP 9899082U JP H0230739 Y2 JPH0230739 Y2 JP H0230739Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- metal film
- filter
- interference filter
- interference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 20
- 230000003595 spectral effect Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Description
【考案の詳細な説明】
この考案は、種々の分光感度特性が精度良く得
られ、かつ小型化を可能とした単色光センサに関
する。[Detailed Description of the Invention] This invention relates to a monochromatic optical sensor that can obtain various spectral sensitivity characteristics with high accuracy and can be miniaturized.
従来の単色光センサとしては、例えば第１図に
示すように、光電素子を内蔵した受光器３の前面
に色フイルタや干渉フイルタあるいは両者の組合
せからなるフイルタ１を設け所定の色の光のみを
透過させ、この透過した単色光をレンズ２によつ
て収束させて上記受光器３へ導くようにしたもの
や、第２図に示すように、光電素子６が半導体基
板５上に形成された受光素子チツプ４の受光面上
に有機膜の色フイルタ７を塗布形成、あるいは色
フイルタフイルムを貼着した構造のもの等があ
る。 In a conventional monochromatic light sensor, for example, as shown in FIG. 1, a filter 1 consisting of a color filter, an interference filter, or a combination of the two is installed in front of a light receiver 3 containing a photoelectric element, so that only light of a predetermined color is detected. The monochromatic light transmitted through the lens 2 is converged by a lens 2 and guided to the photodetector 3, or as shown in FIG. 2, a photodetector 6 is formed on a semiconductor substrate 5. There are structures in which a color filter 7 made of an organic film is coated on the light-receiving surface of the element chip 4, or a color filter film is pasted.
ところが、上記のような構造の単色光センサに
あつては、前者の場合には受光器３とフイルタ１
とが別部品であるため小型化に限界がある。 However, in the case of the monochromatic light sensor having the above structure, in the former case, the receiver 3 and the filter 1 are
Since these are separate parts, there is a limit to miniaturization.
そして、後者の場合には色フイルタ７のみを用
いているため精度の良い分光特性が得られない。
すなわち、上記色フイルタ７の透過特性は第３図
Ａに示す如く、長波長側の光は無制限に透過して
しまうものであり、このため、任意の半値幅、特
に単色光センサの分光感度を向上させるのに必要
な狭い半値幅の透過特性を有するフイルタを作製
することは容易ではない。 In the latter case, accurate spectral characteristics cannot be obtained because only the color filter 7 is used.
That is, as shown in FIG. 3A, the transmission characteristics of the color filter 7 are such that light on the long wavelength side is transmitted without limit, and therefore, the arbitrary half-width, especially the spectral sensitivity of the monochromatic light sensor, is limited. It is not easy to fabricate a filter that has the narrow half-width transmission characteristics necessary to improve the transmission characteristics.
また、通常よく用いられる誘電体膜の両面に金
属膜を蒸着した金属膜干渉フイルタ（以下シング
ルキヤビテイ（Single Cavity）型干渉フイルタ
と称す）を単色光フイルタに利用した場合には、
第３図Ｂに示す如くに上記シングルキヤビテイ型
干渉フイルタの透過特性には主透過帯B1の他に
副透過帯B2を有するため光電素子には検出すべ
き波長の光以外の波長の光も入射することとなり
不都合である。 Furthermore, when a commonly used metal film interference filter (hereinafter referred to as a single cavity interference filter) in which metal films are deposited on both sides of a dielectric film is used as a monochromatic light filter,
As shown in Figure 3B, the transmission characteristic of the single cavity interference filter has a sub-transmission band B2 in addition to the main transmission band B1, so that the photoelectric element also receives light of wavelengths other than the wavelength to be detected. This is inconvenient.
この考案は上記問題点に鑑みなされたもので、
比較的簡単な構造によつて、任意の分光感度特性
が精度良く得られ、かつ小型化が可能な単色光セ
ンサを提供することを目的とする。 This idea was created in view of the above problems.
It is an object of the present invention to provide a monochromatic optical sensor that can accurately obtain arbitrary spectral sensitivity characteristics with a relatively simple structure and that can be miniaturized.
そして、この考案は上記目的を達成するため
に、光電素子の受光面上に、１つの共通な透過帯
を有し、かつ異なる特性の２つの金属膜干渉フイ
ルタを積層形成したことを特徴とするものであ
る。 In order to achieve the above object, this invention is characterized in that two metal film interference filters having one common transmission band and different characteristics are laminated on the light receiving surface of the photoelectric element. It is something.
以下、本考案に係る単色光センサの一実施例を
第４図以下の図面を用いて詳細に説明する。 Hereinafter, one embodiment of the monochromatic optical sensor according to the present invention will be described in detail with reference to FIG. 4 and subsequent drawings.
第４図は本考案の一実施例を模式化して示す断
面図であり、同図に示す単色光センサ１０は、半
導体基板１２上に光電素子１３が形成されてなる
フオトダイオードやフオトトランジスタ等の受光
素子チツプ１１を所定のパツケージやケース等
（図示略）に封止してなるものであり、かつ上記
光電素子１３の受光面上には検出すべき波長の光
のみを透過させて上記受光素子１３へ導くための
干渉フイルタ１４が一体に設けられている。 FIG. 4 is a cross-sectional view schematically showing an embodiment of the present invention, and the monochromatic light sensor 10 shown in the figure is a photodiode, phototransistor, or the like in which a photoelectric element 13 is formed on a semiconductor substrate 12. The photodetector chip 11 is sealed in a predetermined package, case, etc. (not shown), and only the light of the wavelength to be detected is transmitted onto the light-receiving surface of the photoelectric element 13. An interference filter 14 for guiding the light to 13 is integrally provided.
上記干渉フイルタ１４は、上記受光素子１３の
受光面上に真空蒸着法等によつて、金属膜１４ａ
−誘電体膜１４ｂ−金属膜１４ｃ−誘電体膜１４
ｄ−金属膜１４ｅの順に金属膜と誘電体膜を交互
に積層形成してなるものであり、この構造は２つ
のシングルキヤビテイ型干渉フイルタを重合した
多重構造の金属膜干渉フイルタ（以下ダブルキヤ
ビテイ（Double Cavity）型干渉フイルタと称
す）を形成している。 The interference filter 14 is formed by depositing a metal film 14a on the light-receiving surface of the light-receiving element 13 by vacuum evaporation or the like.
- Dielectric film 14b - Metal film 14c - Dielectric film 14
It is formed by laminating metal films and dielectric films alternately in the order of the d-metal film 14e, and this structure is a multilayer metal film interference filter (hereinafter referred to as double cavity) in which two single cavity interference filters are superposed. It forms a double cavity type interference filter).
そして、上記２つのシングルキヤビテイ型干渉
フイルタは、誘電体膜１４ｂ，１４ｄおよび金属
膜１４ａ，１４ｃ，１４ｅの膜厚を適宜調整して
形成することによつて、互いに異なる透過特性を
有するとともに、１つの共通する透過帯を有する
ように形成されている。 The two single-cavity interference filters have different transmission characteristics by appropriately adjusting the film thicknesses of the dielectric films 14b, 14d and the metal films 14a, 14c, 14e, and They are formed to have one common transmission band.
すなわち、第５図ａ，ｂに示す如く、例えば、
上記２つのシングルキヤビテイ型干渉フイルタの
うち一方の干渉フイルタの１次干渉ピークＤと他
方の干渉フイルタの２次干渉ピークＥが共に波長
650nmに存在し、他の干渉ピークＦ，Ｇは異なる
波長にあるものとすれば、両者を重合したダブル
キヤビテイ型干渉フイルタの透過特性は第５図ｃ
に示す如く、互いに異なる透過帯Ｆ，Ｇの波長の
光を遮断し、共通な透過帯Ｈの波長の光のみを透
過させるものとなる。 That is, as shown in FIGS. 5a and 5b, for example,
Of the above two single cavity interference filters, the primary interference peak D of one interference filter and the secondary interference peak E of the other interference filter both have wavelengths.
650nm, and the other interference peaks F and G are at different wavelengths, the transmission characteristics of a double cavity interference filter made by polymerizing both are shown in Figure 5c.
As shown in FIG. 2, light having wavelengths in different transmission bands F and G is blocked, and only light having a wavelength in a common transmission band H is transmitted.
このように、透過特性が異なり、かつ互いに透
過帯状数の異なるピークが同一波長にある２つの
シングルキヤビテイ型干渉フイルタを重合してダ
ブルキヤビテイ型干渉フイルタを形成することに
より、検出すべき波長の光のみを透過させること
ができ精度の良い分光特性が得られることとな
る。 In this way, by forming a double cavity interference filter by superposing two single cavity interference filters that have different transmission characteristics and peaks at the same wavelength with different numbers of transmission bands, it is possible to detect light at the wavelength to be detected. This allows highly accurate spectral characteristics to be obtained.
また、第６図ｄ，ｅに示す如く、上記共通の透
過帯のピーク波長を微小波長だけずらすことによ
つて、第６図ｆに示す如く任意の半値幅で、かつ
すその広がりの少ない透過特性が得られることと
なる。 In addition, as shown in Fig. 6 d and e, by shifting the peak wavelength of the common transmission band by a minute wavelength, it is possible to achieve transmission with an arbitrary half-width and a small width at the base, as shown in Fig. 6 f. characteristics will be obtained.
以上説明したように、本考案の単色光センサに
あつては、光電素子の受光面上に、１つの共通な
透過帯を有し、かつ異なる特性の２つの金属膜干
渉フイルタを積層形成して一体化したことによ
り、受光素子チツプ自体に分光特性を備えたもの
とすることができ、超小型の単色光センサを得る
ことが可能となるとともに、各種機器への実装密
度を微小とすることができるためその適用範囲を
拡大することが可能となる。 As explained above, in the monochromatic optical sensor of the present invention, two metal film interference filters having one common transmission band and different characteristics are stacked on the light receiving surface of the photoelectric element. By integrating them, the light receiving element chip itself can be equipped with spectral characteristics, making it possible to obtain an ultra-small monochromatic light sensor and minimizing the packaging density in various devices. This makes it possible to expand the scope of application.
また、この単色光センサは、光電素子の受光面
上に金属膜干渉フイルタを積層形成する構造にな
つているので、この金属膜干渉フイルタを形成す
る工程は、受光素子チツプの製造工程に容易に組
み入れることができる。その結果、作業性の向上
を図ることができる。 In addition, this monochromatic light sensor has a structure in which a metal film interference filter is laminated on the light receiving surface of the photoelectric element, so the process of forming this metal film interference filter can be easily added to the manufacturing process of the light receiving element chip. can be incorporated. As a result, workability can be improved.
更に、上記２つの金属膜干渉フイルタの金属膜
および誘電体膜の膜厚を調整することにより、任
意の分光感度特性が精度良く得られることとなる
等の利点を有している。 Further, by adjusting the film thicknesses of the metal film and dielectric film of the two metal film interference filters, there is an advantage that arbitrary spectral sensitivity characteristics can be obtained with high precision.
第１図、第２図は従来の単色光センサの概略構
成を示す図、第３図は色フイルタおよび干渉フイ
ルタの透過特性を示す図、第４図は本考案に係る
単色光センサの一実施例を模式化して示す断面
図、第５図および第６図は本考案に係るダブルキ
ヤビテイ型干渉フイルタの透過特性を説明するた
めの図である。
１０……単色光センサ、１３……光電素子、１
４……金属膜干渉フイルタ、１４ａ，１４ｃ，１
４ｅ……金属膜、１４ｂ，１４ｄ……誘電体膜。
Figures 1 and 2 are diagrams showing the schematic configuration of a conventional monochromatic optical sensor, Figure 3 is a diagram showing the transmission characteristics of a color filter and an interference filter, and Figure 4 is an implementation of a monochromatic optical sensor according to the present invention. FIGS. 5 and 6 are cross-sectional views schematically showing examples, and are diagrams for explaining the transmission characteristics of the double cavity interference filter according to the present invention. 10... Monochromatic light sensor, 13... Photoelectric element, 1
4...Metal film interference filter, 14a, 14c, 1
4e...Metal film, 14b, 14d...Dielectric film.
Claims (1)
膜−金属膜−誘電体膜−金属膜」の多重構造で形
成された２つの特性の異なる金属膜干渉フイルタ
を積層形成し、かつ上記２つの金属膜干渉フイル
タは互いに１つの共通な透過帯を有することによ
つて、前記共通の透過帯の光のみを上記受光素子
へ導くように構成したことを特徴とする単色光セ
ンサ。 Two metal film interference filters with different characteristics formed in a multiplexed structure of "metal film-dielectric film-metal film-dielectric film-metal film" are laminated on the light-receiving surface of a predetermined photoelectric element, and the above-mentioned A monochromatic light sensor, characterized in that the two metal film interference filters each have one common transmission band, so that only light in the common transmission band is guided to the light receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9899082U JPS594448U (en) | 1982-06-30 | 1982-06-30 | monochromatic light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9899082U JPS594448U (en) | 1982-06-30 | 1982-06-30 | monochromatic light sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS594448U JPS594448U (en) | 1984-01-12 |
| JPH0230739Y2 true JPH0230739Y2 (en) | 1990-08-20 |
Family
ID=30234778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9899082U Granted JPS594448U (en) | 1982-06-30 | 1982-06-30 | monochromatic light sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594448U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4113813Y1 (en) * | 1965-01-09 | 1966-06-28 |
-
1982
- 1982-06-30 JP JP9899082U patent/JPS594448U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4113813Y1 (en) * | 1965-01-09 | 1966-06-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS594448U (en) | 1984-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6410203B1 (en) | Solid-state imaging device and imaging apparatus | |
| GB2217839A (en) | An optical sensor | |
| US7411679B2 (en) | Optical filter and fluorescence spectroscopy system incorporating the same | |
| CN101185165A (en) | Process for producing solid-state image sensing device, solid-state image sensing device and camera | |
| US4747666A (en) | Multi-layer interference filter | |
| WO2023179466A1 (en) | Pixel structure, image sensor chip, camera module and electronic device | |
| JPH0230739Y2 (en) | ||
| JPH0239226Y2 (en) | ||
| KR102496374B1 (en) | Image sensor | |
| JP7299980B2 (en) | Multispectral image sensor with means for limiting crosstalk | |
| JPH0433147B2 (en) | ||
| JPS59230120A (en) | Optical sensor | |
| US7626241B1 (en) | Thin film interference ripple reduction | |
| US5624709A (en) | High resolution differential spectrometry system | |
| JPH0743212A (en) | Spectroscopic sensor | |
| JPS59230123A (en) | Optical sensor | |
| JP2018066970A (en) | Band-pass filter array, imaging apparatus, and signal processing method | |
| JPS62262001A (en) | Solid-state color image pickup device | |
| JPH01271706A (en) | Optical filter and photoelectric sensor using same | |
| JP2958204B2 (en) | Light receiving element | |
| JPH0671096B2 (en) | Light receiving element | |
| JPH025393Y2 (en) | ||
| JP2018116150A (en) | Spectroscopic element, solid-state image sensor and manufacturing method for spectroscopic element | |
| JPS6326362B2 (en) | ||
| JPS58178647U (en) | monochromatic light sensor |