JPH02307215A - Forming method for resist pattern - Google Patents
Forming method for resist patternInfo
- Publication number
- JPH02307215A JPH02307215A JP1129756A JP12975689A JPH02307215A JP H02307215 A JPH02307215 A JP H02307215A JP 1129756 A JP1129756 A JP 1129756A JP 12975689 A JP12975689 A JP 12975689A JP H02307215 A JPH02307215 A JP H02307215A
- Authority
- JP
- Japan
- Prior art keywords
- time
- potential
- resist
- alkaline
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000003513 alkali Substances 0.000 claims description 3
- 230000018109 developmental process Effects 0.000 claims 2
- 230000007261 regionalization Effects 0.000 claims 1
- 229940075397 calomel Drugs 0.000 abstract 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 239000003504 photosensitizing agent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229920005601 base polymer Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ＬＳＩなどの製造の際に利用するレジストパ
ターン形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resist pattern forming method used in manufacturing LSIs and the like.
従来の技術
現在、一般的なポジ型紫外光（以下ＵＶ光という）レジ
スト（以下ホトレジストという）は、アルカリ溶液（現
像液）に溶解するノボラック樹脂〈ベースポリマー）と
オルソキノンジアジドからなる感光剤の混合物である。Conventional technology At present, the common positive ultraviolet light (hereinafter referred to as UV light) resist (hereinafter referred to as photoresist) is a mixture of a photosensitizer consisting of a novolac resin (base polymer) and orthoquinonediazide that is dissolved in an alkaline solution (developer). It is.
前記感光剤は、Ｕｖ露光されると次式のとおり、最終的
にアルカリ溶液（たとえば水酸化テトラメチルアンモニ
ウムなど）に対して極めて溶解度の高いカルボン酸を生
じる。When the photosensitizer is exposed to UV light, it finally produces a carboxylic acid that is highly soluble in alkaline solutions (eg, tetramethylammonium hydroxide) as shown in the following formula.
また、オルソキノンジアジドは、ノボラック樹脂のアル
カリ溶液に対する溶解の抑止剤として働くので、レジス
ト膜は感光していない状態ではアルカリ溶解に対して極
めて溶解度が低い。In addition, orthoquinone diazide acts as an inhibitor against dissolution of the novolak resin in an alkaline solution, so the resist film has extremely low solubility in an alkali solution in an unexposed state.
このＵＶ光の照射された領域（露光部）と、ＵＶ光の照
射されていない領域（未露光部）の現像液に対する溶解
度の差を利用して、基板上にレジストパターンを形成す
るのが、現在のリソグラフィー技術である。The resist pattern is formed on the substrate by utilizing the difference in solubility in the developer between the area irradiated with UV light (exposed area) and the area not irradiated with UV light (unexposed area). Current lithography technology.
このレジストパターン形成時の現像は静止パドル法が使
用され、現像時間は一定時間で行われている。A stationary paddle method is used for development during the formation of this resist pattern, and the development time is constant.
発明が解決しようとする課題
現在のリソグラフィーは、上記のようにＵＶ光の照射さ
れた領域（露光部）とＵＶ光の照射されていない領域（
未露光部）の現像液に対する溶解度の差を利用して基板
上にレジストパターンを形成する。現在の現像方法は、
静止パドル法が主であるが、現象の終結点を検出できな
いため現像時間は一定で行っている。このため、下地の
形状ヤ躾質により、オーバー現像あるいはアンダー現像
になり、レジスト形状あるいはパターン寸法にばらつき
が生じるという問題がある。Problems to be Solved by the Invention Current lithography, as described above, separates the area irradiated with UV light (exposed area) and the area not irradiated with UV light (exposed area).
A resist pattern is formed on the substrate by utilizing the difference in solubility of the unexposed areas (unexposed areas) in a developer. The current developing method is
The stationary paddle method is the main method, but since the end point of the phenomenon cannot be detected, the developing time is kept constant. For this reason, there is a problem that over-development or under-development occurs depending on the shape and texture of the underlying material, resulting in variations in resist shape or pattern dimensions.
本発明は、上記の問題を解決するもので、レジスト寸法
あるいは形状のばらつきが少ないレジストパターンを形
成することかできるレジストパターン形成方法を提供す
ることを目的とするものである。The present invention solves the above-mentioned problems, and aims to provide a resist pattern forming method that can form a resist pattern with little variation in resist size or shape.
課題を解決するための手段
上記の課題を解決するために本発明のレジストパターン
形成方法は、基板上にポジ型ホトレジストを塗布し、前
記ポジ型ホトレジストに所定の回路パターンを露光した
のちアルカリ現像する際、アルカリ現像液の電導度の変
化を検出して現像時間を決定するものである。Means for Solving the Problems In order to solve the above problems, the resist pattern forming method of the present invention includes applying a positive photoresist onto a substrate, exposing a predetermined circuit pattern to the positive photoresist, and then developing it with alkali. At this time, the development time is determined by detecting changes in the conductivity of the alkaline developer.
作用
ポジ型ホトレジストにＵＶ光照射すると、上記の （１
）式に示すようにポジ型ホトレジスト中の感光剤のオル
ソキノジアジドが変化してカルボン酸を生成する。この
生成したカルボン酸は（２）式に示すようにたとえば水
酸化テトラメチルアンモニウムのようなアルカリ現像液
に溶解する。When a working positive photoresist is irradiated with UV light, the above (1
) As shown in the formula, orthoquinodiazide, a photosensitizer in a positive photoresist, changes to produce a carboxylic acid. The produced carboxylic acid is dissolved in an alkaline developer such as tetramethylammonium hydroxide, as shown in equation (2).
本発明は、上記のように感光したホトレジス１−をアル
カリ現像液に溶解させる際、アルカリ現像液中の可動イ
オンを電導度の変化で検出するものであり、これにより
現像液の状態を一定にすることで、レジスト形状および
寸法のばらつきを減少することができる。In the present invention, when the photoresist 1- exposed to light as described above is dissolved in an alkaline developer, mobile ions in the alkaline developer are detected by changes in conductivity, and thereby the state of the developer can be kept constant. By doing so, variations in resist shape and dimensions can be reduced.
実施例 以下、本発明の実施例を図面を参照しながら説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例のレジストパターン形成方法
の説明図である。FIG. 1 is an explanatory diagram of a resist pattern forming method according to an embodiment of the present invention.
まず、シリコン基板１の上にノボラック樹脂を主成分と
し、感光剤としてオルソキノアジドを含有するポジ型ホ
トレジスト２を塗布する。塗布したのち、ホットプレー
トで１００℃、９０秒間のいわゆるブリベータを行う。First, a positive photoresist 2 containing novolac resin as a main component and orthoquinoazide as a photosensitizer is applied onto a silicon substrate 1 . After coating, a so-called blivator is performed on a hot plate at 100° C. for 90 seconds.
こののち、所定の回路パターンをステッパー（露光波長
４３６ｒｍ）を用いて前記ポジ型ホトレジスト２の上に
転写して露光部２ａと未露光部２ｂとを形成する。この
とき、露光部２ａで上記（１）式の反応がおこり、オル
ソキノンジアジドからカルボン酸が生成する。この後、
アルカリ現像液３で静止パドル現像を行う。このとき、
上記（２）式の反応がおこり露光部２ａは、アルカリ現
像液３に溶解する。この反応は、酸と＠基の中和反応で
ある。このときのアルカリ現像液３の電導度の変化を、
電極４、電圧計５によりその電位の変化として測定する
。電極４は力ロメロ電極のような溶液の電位を測定でき
る電極を使用する。この反応の電位の変化は、露光部２
ａの領域によって異なるが、はぼ数ｍＶ（電源６による
印加電圧１Ｖのとき）の低下が見られる。この反応は強
塩基と弱酸の反応のため、電位の変化は第２図のように
なる。現像時間は、たとえば電位の変化がなくなった時
間ｔ１に１０秒プラスした時間ｔ２に決めた。この現＠
時間の決定は、段差上でレジスト残りをなくするため、
若干オーバー現像となるように行った。７は基板１の回
転用のモータである。Thereafter, a predetermined circuit pattern is transferred onto the positive photoresist 2 using a stepper (exposure wavelength: 436 rm) to form exposed portions 2a and unexposed portions 2b. At this time, the reaction of the above formula (1) occurs in the exposed area 2a, and carboxylic acid is generated from orthoquinone diazide. After this,
Stationary puddle development is performed using alkaline developer 3. At this time,
The reaction of the above formula (2) occurs and the exposed area 2a is dissolved in the alkaline developer 3. This reaction is a neutralization reaction between the acid and the @ group. The change in conductivity of the alkaline developer 3 at this time is
The change in potential is measured using the electrode 4 and the voltmeter 5. As the electrode 4, an electrode capable of measuring the potential of the solution, such as a Romero electrode, is used. The change in potential of this reaction is caused by
Although it varies depending on the region of a, a decrease of approximately several mV (when the voltage applied by the power source 6 is 1 V) is observed. Since this reaction is a reaction between a strong base and a weak acid, the change in potential will be as shown in Figure 2. The development time was determined to be, for example, the time t2, which is the time t1 when there is no change in potential, plus 10 seconds. This current @
The time is determined in order to eliminate the remaining resist on the step.
This was done so that the image was slightly overdeveloped. 7 is a motor for rotating the substrate 1.
以上のようにしてレジストパターンを形成したことによ
り、下地の形状や膜質などによってアンダー現像や大幅
なオーバー現像を起こすようなことがなく、レジスト形
状および寸法のばらつきが非常に減少し、良好なレジス
トパターンを形成することができた。By forming the resist pattern as described above, there is no possibility of under-development or significant over-development due to the underlying shape or film quality, and variations in resist shape and dimensions are greatly reduced, resulting in a good resist pattern. I was able to form a pattern.
発明の効果
以上のように本発明のレジストパターン形成方法によれ
ば、従来の一定時間現象を行う場合と比べて、アルカリ
現像液のｚ ４度の変化を検出して現像時間を決定する
ので、下地の形状や膜質が変動しても非常に簡単にレジ
スト形状あるいは寸法のばらつきを制御でき、その実用
的効果は極めて大である。Effects of the Invention As described above, according to the resist pattern forming method of the present invention, the development time is determined by detecting a change in z of the alkaline developer by 4 degrees, compared to the conventional case where the phenomenon is performed for a certain period of time. Even if the shape or film quality of the base changes, variations in resist shape or dimensions can be controlled very easily, and its practical effects are extremely large.
第１図は本光明の一実施例のレジストパターン形成方法
の説明図、第２図は同レジストパターン形成方法におけ
る現象時間とアルカリ現像液の電圧の関係を示ず図であ
る。
１・・・シリコン基板、２・・・ポジ型ホトレジスト、
２ａ・・・露光部、２ｂ・・・未露光部、３・・・アル
カリ現像液。
代理人 森 本 義 私
用１図
３−−−アルカリチ見づ掟５ｇｌ
第２図
一視壇埼藺ｆｆで２FIG. 1 is an explanatory diagram of a resist pattern forming method according to an embodiment of the present invention, and FIG. 2 is a diagram not showing the relationship between the phenomenon time and the voltage of an alkaline developer in the same resist pattern forming method. 1...Silicon substrate, 2...Positive photoresist,
2a...Exposed area, 2b...Unexposed area, 3...Alkaline developer. Agent Yoshi Morimoto Private use 1 Figure 3 --- Alkalichi's rules 5gl Figure 2 Ichidan Sairai ff 2
Claims (1)
ホトレジストに所定の回路パターンを露光したのち、ア
ルカリ現像する際、アルカリ現像液の電導度の変化を検
出して現像時間を決定することを特徴とするレジストパ
ターン形成方法。1. When a positive photoresist is applied on a substrate, a predetermined circuit pattern is exposed on the positive photoresist, and then alkali development is performed, the development time is determined by detecting changes in the conductivity of the alkaline developer. Characteristic resist pattern formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1129756A JPH02307215A (en) | 1989-05-22 | 1989-05-22 | Forming method for resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1129756A JPH02307215A (en) | 1989-05-22 | 1989-05-22 | Forming method for resist pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02307215A true JPH02307215A (en) | 1990-12-20 |
Family
ID=15017419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1129756A Pending JPH02307215A (en) | 1989-05-22 | 1989-05-22 | Forming method for resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02307215A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005077781A (en) * | 2003-09-01 | 2005-03-24 | Toppan Printing Co Ltd | Control apparatus and method for developing time |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169268U (en) * | 1987-04-21 | 1988-11-04 |
-
1989
- 1989-05-22 JP JP1129756A patent/JPH02307215A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169268U (en) * | 1987-04-21 | 1988-11-04 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005077781A (en) * | 2003-09-01 | 2005-03-24 | Toppan Printing Co Ltd | Control apparatus and method for developing time |
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