JPH02296391A - Manufacture of aluminum nitride circuit board - Google Patents
Manufacture of aluminum nitride circuit boardInfo
- Publication number
- JPH02296391A JPH02296391A JP11783689A JP11783689A JPH02296391A JP H02296391 A JPH02296391 A JP H02296391A JP 11783689 A JP11783689 A JP 11783689A JP 11783689 A JP11783689 A JP 11783689A JP H02296391 A JPH02296391 A JP H02296391A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- metal film
- circuit board
- film
- nitride circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052802 copper Inorganic materials 0.000 abstract description 19
- 239000010949 copper Substances 0.000 abstract description 19
- 238000007747 plating Methods 0.000 abstract description 15
- 238000011282 treatment Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 4
- 230000003213 activating effect Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 230000001235 sensitizing effect Effects 0.000 abstract description 3
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract description 2
- 230000004907 flux Effects 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 230000002265 prevention Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000007654 immersion Methods 0.000 description 5
- 206010070834 Sensitisation Diseases 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 230000008313 sensitization Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、窒化アルミニウム回路基板の製造法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an aluminum nitride circuit board.
（従来の技術）
近年、ハイブリッドＩＣの高密度化、高出力化にともな
い、熱伝導性の大きな非酸化物セラミックス基板材料が
開発されている。その代表的な材料の一つとして窒化ア
ルミニウムが注目されている。(Prior Art) In recent years, with the increase in density and output of hybrid ICs, non-oxide ceramic substrate materials with high thermal conductivity have been developed. Aluminum nitride is attracting attention as one of the representative materials.
従来、窒化アルミニウム基板に金属被膜を密着させる方
法としては、チタン、白金、金等を蒸着する薄膜法、窒
化アルミニウム基板上にガラス粉と金属粉との混合ペー
ストを印刷し、これを焼付ける厚膜印刷焼成法がある。Conventionally, methods for adhering a metal film to an aluminum nitride substrate include a thin film method in which titanium, platinum, gold, etc. are vapor-deposited, and a mixed paste of glass powder and metal powder is printed on an aluminum nitride substrate and then baked. There is a film printing and firing method.
（発明が解決しようとする課題）
しかしながら薄膜法は、真空雰囲気中で蒸着するため製
造工程が煩雑で、コスト高となシ、複雑形状（スルホー
ル）品は蒸着むらが生じ適用出来ないという欠点がある
。(Problems to be Solved by the Invention) However, the thin film method has the disadvantages that the manufacturing process is complicated and expensive because it is vapor deposited in a vacuum atmosphere, and it cannot be applied to products with complex shapes (through holes) due to uneven vapor deposition. be.
一方、厚膜印刷焼成法は２金属と窒化アルミニウム基板
との密着は、ガラスを介して行われるため密着力が弱く
、また金属に金、銀、パラジウム等の貴金属を用いるた
め、コスト高となる欠点がある。On the other hand, in the thick film printing and firing method, the adhesion between the two metals and the aluminum nitride substrate is achieved through glass, which results in weak adhesion, and the use of noble metals such as gold, silver, and palladium results in high costs. There are drawbacks.
これらの改良として、「逢坂哲弥」著作のメタライゼー
ション オブ エイエルエヌ（窒化アルミニウム）セラ
ミックス パイ エレクトロレス エヌアイービーにッ
ケルリ／）プレイティング、ジエイ、エレクトロケム、
ニスオーシー（Ｍｅｔａｌｉｚａｔｉｏｎｏｆ ＡＩＮ
Ｃｅｒａｍｉｃｓ ｂｙ Ｅｌｅｃｔｒｏｌｅｓ
ｓ Ｎｉ −ＰＰｌａｔｉｎｇ、 Ｊ、 Ｅｌｅｃ
ｔｒｏｃｈｅｍ、 Ｓｏｃ ） Ｖｏｌ、 １３３゜Ｎ
１１ｌｌ、（１９８６）に示されるように、窒化アルミ
ニウム基板の表面に無電解Ｎ１−Ｐ−めっきを施す方法
があるが、この方法では導体の抵抗が銅の約３倍もある
ため配線板には不向きである。エツチング残りが生じ易
くなり表面絶縁抵抗特性が悪化する等の問題がある。These improvements include "Metallization of Aluminum Nitride Ceramics" written by Tetsuya Osaka.
Metalization of AIN
Ceramics by Electroles
sNi-PPlating, J, Elec
trochem, Soc) Vol, 133°N
11ll, (1986), there is a method of applying electroless N1-P- plating to the surface of an aluminum nitride substrate, but in this method, the resistance of the conductor is about three times that of copper, so the wiring board cannot be used. Not suitable. There are problems such as etching residues tending to occur and surface insulation resistance characteristics worsening.
また無電解銅めっきを施す場合、無電解銅めっき液が強
アルカリ性であるため、窒化アルミニウム基板を用いた
回路基板には適用できないという問題がある。Further, when performing electroless copper plating, there is a problem that the electroless copper plating solution is strongly alkaline and cannot be applied to circuit boards using aluminum nitride substrates.
本発明は上記の欠点のない窒化アルミニウム回路基板の
製造法を提供することを目的とするものである。The object of the present invention is to provide a method for manufacturing aluminum nitride circuit boards that does not have the above-mentioned drawbacks.
（課題を解決するための手段）
本発明者らは上記の欠点について種々検討した結果、窒
化アルミニウム表面のフラツクス（ガラス質）及び主構
成物質粒子のごく一部を粗化しながら感受性化処理を行
うことでＳｎ 粒子の窒化アルミニウム表面への化学
吸着量を増加（均一化）させることが出来るということ
をつきとめ、窒化アルミニウムを例えばＳｎＦ２溶液中
に浸漬して窒化アルミニウムの表面を均一に粗化しなが
ら感受性化処理を行い、水洗後活性化処理を行った後。(Means for Solving the Problem) As a result of various studies on the above-mentioned drawbacks, the present inventors carried out sensitization treatment while roughening the flux (vitreous) on the surface of aluminum nitride and a small part of the main constituent material particles. They found that the amount of chemical adsorption of Sn particles on the aluminum nitride surface could be increased (uniformed) by doing this, and by immersing aluminum nitride in, for example, a SnF2 solution, the surface of aluminum nitride could be uniformly roughened and sensitive. After activating, washing with water and activating.
無電解銅めっき法によシ金属被膜を形成し、水洗後酸化
皮膜を除去し、その後電解銅めっき法により金属被膜を
形成し、ついで金属被膜の上面にレジスト膜を形成し、
しかる後露光、現像、エツチングにより、レジスト膜の
剥離を行い、金属被膜の必要な部分のみを残して導体回
路を形成したところ、上記の欠点の生じない窒化アルミ
ニウム回路基板が得られることを見出した。Forming a metal film by electroless copper plating, removing the oxide film after washing with water, then forming a metal film by electrolytic copper plating, and then forming a resist film on the top surface of the metal film,
After that, the resist film was peeled off by exposure, development, and etching to form a conductive circuit leaving only the necessary portions of the metal film, and it was discovered that an aluminum nitride circuit board free from the above-mentioned defects could be obtained. .
本発明は窒化アルミニウム基板の表面に金属被膜を形成
して導体回路を形成するセラミック回路基板の製造法に
おいて、窒化アルミニウム基板の表面を粗化及び感受性
化処理を同時に行い、さらに水洗、活性化処理を行った
後無電解めっき法及び電解めっき法で金属被膜を形成し
、ついで金属被膜の上面にレジスト膜を形成し、しかる
後露光。The present invention is a method for manufacturing a ceramic circuit board in which a metal film is formed on the surface of an aluminum nitride substrate to form a conductor circuit, in which the surface of the aluminum nitride substrate is simultaneously roughened and sensitized, and further subjected to water washing and activation treatment. After that, a metal film is formed by electroless plating and electrolytic plating, and then a resist film is formed on the top surface of the metal film, and then exposed.
現像，エッチング，レジスト膜の剥離を行い金属被膜の
必要な部分のみを残して導体回路を形成する窒化アルミ
ニウム回路基板の製造法に関する。This invention relates to a method for manufacturing an aluminum nitride circuit board, which involves developing, etching, and peeling off a resist film to form a conductor circuit by leaving only the necessary portions of the metal film.
本発明において、窒化アルミニウム基板の表面を粗化し
、感受性化処理を行う方法としては特に制限はないが、
８ｎＦ２溶液に浸漬するか、又はＮａＯＨ、ＫＯＨ等
のアルカリ融液に浸漬して粗化。In the present invention, there are no particular limitations on the method of roughening the surface of the aluminum nitride substrate and sensitizing it, but
Roughen by immersing in 8nF2 solution or immersing in alkaline melt such as NaOH or KOH.
感受性化することが好ましい。Sensitization is preferred.
８ ｎ Ｆ ２溶液への浸漬時間は、液温か３０〜６０
℃の溶液中に１分以上浸漬することが好ましく。The immersion time in the 8 n F2 solution is 30 to 60 minutes depending on the temperature of the liquid.
It is preferable to immerse it in a solution at a temperature of 1 minute or more.
ＮａＯＨ，ＫＯＨ等のアルカリ融液への浸漬時間は。What is the immersion time in an alkali melt such as NaOH or KOH?
液温か３１８℃の融液中に１〜５分間浸漬することが好
ましい。It is preferable to immerse it in the melt for 1 to 5 minutes at a temperature of 318°C.
金属被膜の形成に用いられる無電解めっき及び電解めっ
きの金属としては、銅、ニッケル等が好ましい。The metal for electroless plating and electrolytic plating used to form the metal film is preferably copper, nickel, or the like.
なお電解めっき液への浸漬時間は、液温か１０〜４０℃
の溶液中に１０〜３０分間浸漬することが好ましい。The immersion time in the electrolytic plating solution is 10 to 40℃.
It is preferable to immerse it in the solution for 10 to 30 minutes.
（実施例） 以下本発明の詳細な説明する。(Example) The present invention will be explained in detail below.
実施例１
寸法が５０．８ Ｘ ５０．８ｍｍ、厚さが０．６３５
ｍｍで直径が０．５ ｍｍ（φ）のスルーホールを２０
ケ形成した窒化アルミニウム基板（東北金属工業製、商
品名ＴＯＫＩＮ ＡＩ！Ｎ ’ｒ−１６０）をトリク
レン溶液（脱脂液）（和光純薬製、試薬１級）で洗浄し
。Example 1 Dimensions: 50.8 x 50.8 mm, thickness: 0.635
20 through holes with a diameter of 0.5 mm (φ)
The formed aluminum nitride substrate (manufactured by Tohoku Metal Industry Co., Ltd., trade name: TOKIN AI!N'r-160) was washed with a trichlene solution (degreasing liquid) (manufactured by Wako Pure Chemical Industries, Ltd., reagent grade 1).
水洗を行った後、 ＳｎＦ２溶液（ｓｏｇ／、Ｊ）中
に１５分間浸漬して、粗化及び感受性化処理を同時に行
い、さらに水洗後ＰｄＣＪｚ溶液（０，３９／Ｖ）に５
分間浸漬して活性化処理を行った。この後無電解銅めっ
きを１５分間行い、厚さ０．８μｍの銅の被膜を形成し
た。々お無電解めっき液は（日立化成工業與、商品名Ｃ
ａ５ｔ２０１）を使用した。After washing with water, it was immersed in a SnF2 solution (sog/, J) for 15 minutes to perform roughening and sensitization treatments at the same time, and then immersed in a PdCJz solution (0,39/V) for 5
Activation treatment was performed by dipping for a minute. Thereafter, electroless copper plating was performed for 15 minutes to form a copper film with a thickness of 0.8 μm. The electroless plating solution is (Hitachi Chemical Co., Ltd., product name C)
a5t201) was used.
続いて水洗後、濃度１０重′Ｉｋ％の硫酸溶液に浸漬し
て酸化被膜を除去後、ソフトエツチング溶液（奥野製薬
製、商品名０ＰＣ−９１，５０艷／１りに３０秒間浸漬
し、ついで電解銅めっき（硫酸銅めっき）を１５分間行
い、厚さ１０μｍの銅の被膜を形成した。なお電解銅め
っき液は（荏原電産製、商品名ＰＣ−６３６）を使用し
た。Subsequently, after washing with water, the oxide film was removed by immersion in a sulfuric acid solution with a concentration of 10% by weight, and then immersed in a soft etching solution (manufactured by Okuno Pharmaceutical Co., Ltd., trade name 0PC-91, 50 units/unit) for 30 seconds. Electrolytic copper plating (copper sulfate plating) was performed for 15 minutes to form a copper film with a thickness of 10 μm.The electrolytic copper plating solution (manufactured by Ebara Densan, trade name: PC-636) was used.
銅めっき後、従来公知の方法で一般的なフォトレジスト
を使用するエツチング法（レジスト膜の形成、露光、現
像，エッチング，レジスト膜の剥離）により２×２■の
導体回路を形成した窒化アルミニウム回路基板を得た。After copper plating, an aluminum nitride circuit in which a 2×2 conductor circuit was formed by etching using a general photoresist (formation of a resist film, exposure, development, etching, and peeling of the resist film) using a conventionally known method. I got the board.
次に上記で得た窒化アルミニウム回路基板２０ケを使用
し、密着（接着）強度を測定した。その結果１．９〜２
．６ ｋｇ／ｍｕ２の範囲で、平均値が２．３ ｋｇ／
ｍｍ２の密着強度を示し良好であった。また外観を観察
したが銅の被膜にふくれは見られず、スルホール内も良
好であった。Next, the adhesion (adhesion) strength was measured using 20 aluminum nitride circuit boards obtained above. The result was 1.9~2
．． In the range of 6 kg/mu2, the average value is 2.3 kg/mu2.
It showed good adhesion strength of mm2. Further, when the external appearance was observed, no blistering was observed in the copper coating, and the inside of the through holes were also in good condition.
比較例１
実施例１と同様の窒化アルミニウム基板を実施例１と同
様にトリクレンで洗浄し、中和、水洗を行った後濃度１
０重量％のＨＦ溶液に２０分間浸漬して粗化を行い、さ
らにＰｄ −Ｓｎ溶液（日立化成工業部、商品名Ｈ８−
１０１Ｂ）で感受性化処理、活性化処理を行った。この
後無電解銅めっきを３時間行い、厚さ６μｍの銅の被膜
を形成した。Comparative Example 1 An aluminum nitride substrate similar to that in Example 1 was cleaned with trichlene in the same manner as in Example 1, and after neutralization and water washing, the concentration was 1.
Roughening was performed by immersion in a 0% by weight HF solution for 20 minutes, and then a Pd-Sn solution (Hitachi Chemical Co., Ltd., trade name H8-
101B), sensitization treatment and activation treatment were performed. Thereafter, electroless copper plating was performed for 3 hours to form a copper film with a thickness of 6 μm.
なお無電解銅めっき液は（日立化成工業部、商品名Ｌ−
５９）を使用した。The electroless copper plating solution is (Hitachi Chemical Department, product name L-
59) was used.
めっき後実施例１と同様の工程を経て２Ｘ２ｍｍの導体
回路を形成した窒化アルミニウム回路基板を得た。After plating, the same steps as in Example 1 were carried out to obtain an aluminum nitride circuit board on which a 2×2 mm conductor circuit was formed.
次に上記で得た窒化アルミニウム回路基板２０ケを使用
し密着強度を測定した。その結果密着強度は、最大が０
．９ ｋｇ／ｍｍ”で、最小がＯと密着強度が弱く、ば
らつきが多かった。また外観を観察したところ、銅の被
膜の所々にふくれが発生していた。Next, the adhesion strength was measured using 20 aluminum nitride circuit boards obtained above. As a result, the maximum adhesion strength is 0.
．． The adhesion strength was 9 kg/mm'', and the minimum was O, so the adhesion strength was weak and varied widely. When the appearance was observed, blistering had occurred in some places in the copper coating.
比較例２
実施例１と同様の窒化アルミニウム基板を実施例１と同
様にトリクレンで洗浄し、中和、水洗後乾燥し、この後
アルミニウムを２μｍの厚さに蒸着した。Comparative Example 2 An aluminum nitride substrate similar to that in Example 1 was washed with trichlene in the same manner as in Example 1, neutralized, washed with water, dried, and then aluminum was vapor-deposited to a thickness of 2 μm.
蒸着後スルホール内部を実体顕微１（Ｘ４０倍）で外観
を観察したところ、アルミニウムが蒸着していない部分
（不析出部分）が確認された。After the vapor deposition, when the appearance of the inside of the through hole was observed using a stereoscopic microscope 1 (40x magnification), it was confirmed that there were areas where aluminum was not vapor deposited (non-deposited areas).
（発明の効果）
本発明の製造法によって得られる窒化アルミニウム回路
基板は、金属被膜との密着強度が強く。(Effects of the Invention) The aluminum nitride circuit board obtained by the manufacturing method of the present invention has strong adhesion strength to the metal coating.
しかも密着強度のばらつきが少なく、金属被膜にまた本
発明によれば、高密度窒化アルミニウム回路基板を安価
に製造することができる。Furthermore, variations in adhesion strength are small, and according to the present invention, a high-density aluminum nitride circuit board can be manufactured at low cost.
一one
Claims (1)
導体回路を形成するセラミック回路基板の製造法におい
て，窒化アルミニウム基板の表面を粗化及び感受性化処
理を同時に行い，さらに水洗，活性化処理を行つた後無
電解めつき法及び電解めつき法で金属被膜を形成し，つ
いで金属被膜の上面にレジスト膜を形成し，しかる後露
光，現像，エッチング，レジスト膜の剥離を行い金属被
膜の必要な部分のみを残して導体回路を形成することを
特徴とする窒化アルミニウム回路基板の製造法。1. In a method of manufacturing a ceramic circuit board in which a conductor circuit is formed by forming a metal film on the surface of an aluminum nitride substrate, the surface of the aluminum nitride substrate is simultaneously roughened and sensitized, and then washed with water and activated. After that, a metal film is formed by electroless plating method or electrolytic plating method, then a resist film is formed on the top surface of the metal film, and after that, exposure, development, etching, and peeling of the resist film are performed to remove the necessary parts of the metal film. A method for manufacturing an aluminum nitride circuit board, characterized in that a conductor circuit is formed by leaving only the aluminum nitride circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11783689A JPH02296391A (en) | 1989-05-11 | 1989-05-11 | Manufacture of aluminum nitride circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11783689A JPH02296391A (en) | 1989-05-11 | 1989-05-11 | Manufacture of aluminum nitride circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296391A true JPH02296391A (en) | 1990-12-06 |
Family
ID=14721456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11783689A Pending JPH02296391A (en) | 1989-05-11 | 1989-05-11 | Manufacture of aluminum nitride circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02296391A (en) |
-
1989
- 1989-05-11 JP JP11783689A patent/JPH02296391A/en active Pending
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