JPH02292741A - Device and method for superimposing high frequency - Google Patents
Device and method for superimposing high frequencyInfo
- Publication number
- JPH02292741A JPH02292741A JP1114499A JP11449989A JPH02292741A JP H02292741 A JPH02292741 A JP H02292741A JP 1114499 A JP1114499 A JP 1114499A JP 11449989 A JP11449989 A JP 11449989A JP H02292741 A JPH02292741 A JP H02292741A
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- Prior art keywords
- semiconductor laser
- high frequency
- signal
- laser elements
- distributor
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 230000010355 oscillation Effects 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 241000270281 Coluber constrictor Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、光ヘッド、特に複数の半導体レーザ素子が発
するレーザビームを1個の対物レンズで記憶媒体上に集
光し、並列的に情報の記録再生を行うマルチビーム光ヘ
ッドの半導体レーザ駆動回路における高周波重畳装置お
よび高周波重畳方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Fields] The present invention focuses laser beams emitted by an optical head, particularly a plurality of semiconductor laser elements, onto a storage medium using one objective lens, and stores information in parallel. The present invention relates to a high frequency superimposing device and a high frequency superimposing method in a semiconductor laser drive circuit of a multi-beam optical head that performs recording and reproduction.
[従来の技術]
従来より、複数の半導体レーザ素子が発するレーザビー
ムを1個の対物レンズで記憶媒体上に集光し、並列的に
情報の記録再生を行うマルチビーム光ヘッドが知られて
いる。[Prior Art] Conventionally, multi-beam optical heads have been known that converge laser beams emitted by multiple semiconductor laser elements onto a storage medium using a single objective lens, and record and reproduce information in parallel. .
一般に、半導体レーザを用いた光ヘッドにおいては、再
生時に、主に記憶媒体面で反射されたレーザビームが該
半導体レーザに戻り、干渉を起こすことによって生じる
戻り光雑音が問題となる。Generally, in an optical head using a semiconductor laser, during reproduction, the laser beam mainly reflected on the surface of the storage medium returns to the semiconductor laser, causing interference, causing a problem of return optical noise.
これを解決するために、従来より半導体レーザの駆動電
流に高周波(たとえば5QOMI−t.)の信号を重畳
することが行われている。マルチビーム半導体レーザを
用いたマルチビーム光ヘッドにおいても同様であり、以
下に図面を用いて説明する。To solve this problem, it has been conventionally practiced to superimpose a high frequency (for example, 5QOMI-t.) signal on the drive current of the semiconductor laser. The same applies to a multi-beam optical head using a multi-beam semiconductor laser, and will be explained below with reference to the drawings.
第3図はマルチビーム半導体レーザの駆動回路における
従来例の高周波重畳装置および高周波重畳を説明するた
めのブロック図であって、1はマルチビーム半導体レー
ザ、2a,2b,・・・ 2n(以下代表する場合は2
と記す)はマルチビーム半導体レーザlを構成する個々
の半導体レーザ素子、3a,3b,・・・.3n(以下
代表する場合は3と記す)は各半導体レーザ素子2を個
別に駆動する半導体レーザ駆動回路、4a,4b,・・
・,4n(以下代表する場合は4と記す)は各半導体レ
ーザ素子に重畳する高周波信号を個別に発生する高周波
発振回路である。上記において、半導体レーザ素子駆動
回路3および高周波発振回路4の構成は、当該技術者に
は周知のものなので、その説明は省略する。FIG. 3 is a block diagram for explaining a conventional high-frequency superposition device and high-frequency superposition in a multi-beam semiconductor laser drive circuit, in which 1 is a multi-beam semiconductor laser, 2a, 2b, . . . 2n (hereinafter representative). 2 if you do
) are the individual semiconductor laser elements 3a, 3b, . . . that constitute the multi-beam semiconductor laser l. 3n (hereinafter referred to as 3 if representative) is a semiconductor laser drive circuit that drives each semiconductor laser element 2 individually; 4a, 4b, . . .
. , 4n (hereinafter referred to as 4 if representative) is a high frequency oscillation circuit that individually generates a high frequency signal to be superimposed on each semiconductor laser element. In the above, the configurations of the semiconductor laser element drive circuit 3 and the high frequency oscillation circuit 4 are well known to those skilled in the art, and therefore their explanations will be omitted.
以上の構成の従来例では、1つの半導体レーザ駆動回路
3と1つの高周波発振回路4とが、マルチビーム半導体
レーザ■の1つの半導体レーザ素子2と各々個別に接続
され、再生時には、再生用パワーのレーザビームを発す
るよう、各半導体レーザ駆動回路3によって各半導体レ
ーザ素子2に直流電流が流される。これと同時に、各高
周波発振回路4から各半導体レーザ素子2の駆動電流に
高周波信号が各々独立に重畳される。これによって、上
記従来例は各半導体レーザ素子2の戻り光雑音を抑圧し
ていた。In the conventional example with the above configuration, one semiconductor laser drive circuit 3 and one high frequency oscillation circuit 4 are each individually connected to one semiconductor laser element 2 of the multi-beam semiconductor laser (2), and at the time of reproduction, the reproduction power is A direct current is passed through each semiconductor laser element 2 by each semiconductor laser drive circuit 3 so as to emit a laser beam of . At the same time, a high frequency signal is independently superimposed on the drive current of each semiconductor laser element 2 from each high frequency oscillation circuit 4. As a result, in the conventional example described above, the return optical noise of each semiconductor laser element 2 is suppressed.
[発明が解決しようとする課題コ
しかしながら、上記従来のマルチビーム光ヘッドにおけ
る高周波重畳装置および高周波重畳方法では、半導体レ
ーザ素子2の数だけ高周波発振回路4を備えていたので
、周囲温度や電源電圧の変動に伴って各高周波発振回路
4の発振周波数が独立に変動し、各高周波発振回路4の
発振周波数間のビート信号が記録情報の再生信号帯域の
周波数となって半導体レーザ駆動電流に混入するという
問題点があった。すなわち、前記のビート信号が雑音と
なり、長期に亘って安定な再生動作が行えないという問
題点があった。[Problems to be Solved by the Invention] However, in the above-mentioned conventional high-frequency superimposition device and high-frequency superposition method in a multi-beam optical head, the number of high-frequency oscillation circuits 4 equal to the number of semiconductor laser elements 2 is provided. As the oscillation frequency of each high-frequency oscillation circuit 4 fluctuates independently, the beat signal between the oscillation frequencies of each high-frequency oscillation circuit 4 becomes the frequency of the reproduction signal band of the recorded information and is mixed into the semiconductor laser drive current. There was a problem. That is, there is a problem in that the beat signal becomes noise and stable reproduction operation cannot be performed over a long period of time.
本発明は、上記問題点を解決するために創案されたもの
で、マルチビーム光ヘッドを用いて記録媒体の情報の再
生を行う場合、その再生信号品質を長期に亘って安定化
させ向上させることができるマルチビーム半導体レーザ
の駆動回路および駆動方法における高周波重畳装置およ
び高周波重畳方法を提供することを目的とする。The present invention was devised to solve the above problems, and aims to stabilize and improve the quality of the reproduced signal over a long period of time when reproducing information from a recording medium using a multi-beam optical head. An object of the present invention is to provide a high-frequency superimposition device and a high-frequency superposition method in a multi-beam semiconductor laser drive circuit and drive method that can perform the following steps.
[課題を解決するための手段]
上記の目的を達成するための本発明の高周波重畳装置の
構成は、
複数の半導体レーザ素子が発するビームを1個の対物レ
ンズで記憶媒体上に集光し並列的に情報の記録再生を行
うマルチビーム光ヘッドの半導体レーザ駆動回路におけ
る高周波重畳装置において、1つの高周波信号を発生す
る高周波発振回路と、上記1つの高周波信号を入力信号
として複数に分配する複数の出力端子を有しその出力端
子を上記複数の半導体レーザ素子の選別したそれぞれに
個別に接続する1つの分配器とを具備することを特徴と
する。[Means for Solving the Problems] The configuration of the high frequency superimposing device of the present invention for achieving the above object is to focus beams emitted by a plurality of semiconductor laser elements onto a storage medium using one objective lens and collimate them in parallel. A high-frequency superimposition device in a semiconductor laser drive circuit of a multi-beam optical head that records and reproduces information electronically includes a high-frequency oscillation circuit that generates one high-frequency signal, and a plurality of high-frequency oscillator circuits that distribute the single high-frequency signal to multiple input signals. The present invention is characterized by comprising one distributor having an output terminal and individually connecting the output terminal to each of the selected plurality of semiconductor laser elements.
また、上記の目的を達成するための本発明の高周波重畳
方法の構成は、
複数の半導体レーザ素子が発するビームを1個の対物レ
ンズで記憶媒体上に集光し並列的に情報の記録再生を行
うマルチビーム光ヘッドの半導体レーザ駆動方法におけ
る高周波重立方法において、まず1つの高周波信号を発
生し、次に上記1つの高周波信号を複数に分配し、次に
上記分配した高周波信号を上記複数の半導体レーザ素子
の選別したそれぞれに個別に印加重畳することを特徴と
する。Furthermore, the configuration of the high frequency superimposition method of the present invention to achieve the above object is to focus beams emitted by a plurality of semiconductor laser elements onto a storage medium using one objective lens, and record and reproduce information in parallel. In the high frequency superposition method in the semiconductor laser driving method of a multi-beam optical head, first one high frequency signal is generated, then the one high frequency signal is distributed to a plurality of signals, and then the distributed high frequency signal is transmitted to the plurality of high frequency signals. The method is characterized in that the voltage is applied to each of the selected semiconductor laser elements individually.
[作用]
本発明は、マルチビーム半導体レーザを構成する複数の
半導体レーザ素子の選別したそれぞれに、戻り光雑音を
抑圧する目的で重畳する高周波信号を、一つの高周波信
号から分配して印加重畳することにより、完全に同一周
波数の高周波信号が上記個々の半導体レーザ素子に重畳
されるようにして、各々の高周波信号間のビート信号の
発生を無くし、マルチビーム光ヘッドにおいて安定な再
生動作ができるようにする。[Operation] The present invention distributes and applies a high-frequency signal to be superimposed on each of a plurality of selected semiconductor laser elements constituting a multi-beam semiconductor laser for the purpose of suppressing return optical noise from a single high-frequency signal. By doing so, high-frequency signals of completely the same frequency are superimposed on each of the semiconductor laser elements, eliminating the generation of beat signals between the respective high-frequency signals, and enabling stable reproduction operation in the multi-beam optical head. Make it.
[実施例]
以下、本発明の実施例を図面に基づいて詳細に説明する
。[Example] Hereinafter, an example of the present invention will be described in detail based on the drawings.
第1図は本発明の一実施例を示すブロック図であって、
1はマルチビーム半導体レーザ、2a2b,・・・,2
n(以下代表する場合は2と記す)はマルチビーム半導
体レーザを構成する個々の半導体レーザ木子、3a,3
b,・・・.3n(以下代表する場合は3と記す)は上
記各半導体レーザ素子2に個別に接続して各々を駆動す
る半導体レーザ駆動回路、4は1つの高周波信号を発生
する高周波発振回路、5は少なくとら選別した半導体レ
ーザ素子2の数と同数の出力端子を有し上記1つの高周
波信号を入力信号として分配した高周波信号をそれらの
出力端子へ伝達する!つの分配器である。上記において
、1つの半導体レーザ駆動回路3とマルチビーム半導体
レーザ1の1つの半導体レーザ素子2とは、各々個別に
接続し、高周波発振回路4の発振出力は分配器5の入力
端子に接続し、分配器5の1つの出力端子は1つの半導
体レーザ素子2に各々個別に接続する。本実施例では、
半導体レーザ素子2の選別数は全素子数であり、従って
、マルチビーム半導体レーザを構成する半導体レーザ素
子2の全素子に高周波信号を印加重畳する。高周波発振
回路4の構成は、従来と同様に周知のものを使用するこ
とができる。例えば、一般的には遅延線等を用いた遅延
型の発振回路が使用され、その他にはオーバトーン型の
水晶発振回路やトンネルダイオード等を用いた発振回路
などが利用できる。FIG. 1 is a block diagram showing an embodiment of the present invention,
1 is a multi-beam semiconductor laser, 2a2b,...,2
n (hereinafter referred to as 2 if representative) is the individual semiconductor laser tree, 3a, 3 constituting the multi-beam semiconductor laser.
b,... 3n (hereinafter referred to as 3 in representative cases) is a semiconductor laser drive circuit that is individually connected to each of the semiconductor laser elements 2 and drives each, 4 is a high frequency oscillation circuit that generates one high frequency signal, and 5 is at least It has the same number of output terminals as the number of selected semiconductor laser elements 2, and transmits a high-frequency signal obtained by dividing the above-mentioned one high-frequency signal as an input signal to those output terminals! There are two distributors. In the above, one semiconductor laser drive circuit 3 and one semiconductor laser element 2 of the multi-beam semiconductor laser 1 are each connected individually, and the oscillation output of the high frequency oscillation circuit 4 is connected to the input terminal of the distributor 5, One output terminal of the distributor 5 is individually connected to one semiconductor laser element 2. In this example,
The number of semiconductor laser elements 2 to be selected is the total number of elements, and therefore a high frequency signal is applied and superimposed on all the elements of the semiconductor laser elements 2 constituting the multi-beam semiconductor laser. As the configuration of the high frequency oscillation circuit 4, a well-known configuration can be used as in the conventional case. For example, a delay type oscillation circuit using a delay line or the like is generally used, and an overtone type crystal oscillation circuit or an oscillation circuit using a tunnel diode or the like can also be used.
第2図は七記分配器5の横成例を示すブロック図である
。図において、5lは1つの高周波信号を接続する入力
端子、52は例えばトランジスタ1段で構成した分配用
の増幅器、53a,53b,・・・ 53nは人力側を
増幅器52の出力に並列に接続して分配した高周波信号
を複数の出力端子54a,54b,・・・.54nのそ
れぞれに個別に伝達するバッファ用の増幅器である。バ
ツファ用の増幅Zi53a,53b,−,53nとして
は、例えばエミッタフオロワ回路などが利用できる。こ
れらのバッファ用増幅器53a,53b,・・・,53
nは、出力端子54 a,54 b,−,54 nがそ
れぞれ第1図における半導体レーザ素子2a,2b,・
・・,2nに接続されたときに、それぞれの駆動電流の
他への廻り込みを防止する。FIG. 2 is a block diagram showing an example of horizontal construction of the seven-point distributor 5. As shown in FIG. In the figure, 5l is an input terminal to which one high-frequency signal is connected, 52 is a distribution amplifier composed of, for example, one stage of transistors, and 53a, 53b, . The high frequency signals distributed by the output terminals 54a, 54b, . . . This is a buffer amplifier for individually transmitting data to each of the 54n. For example, an emitter follower circuit can be used as the buffer amplifiers Zi53a, 53b, -, 53n. These buffer amplifiers 53a, 53b,..., 53
The output terminals 54a, 54b, -, 54n correspond to the semiconductor laser elements 2a, 2b, . . . in FIG. 1, respectively.
..., 2n, prevents each drive current from flowing to the other.
次に、本発明を高周波重畳方法として述べる。Next, the present invention will be described as a high frequency superimposition method.
以上の説明で明らかなように、本発明の高周波重畳方法
の一実施例の構成は、
(1)まず、1つの高周波信号を発生する。As is clear from the above description, the configuration of one embodiment of the high frequency superimposition method of the present invention is as follows: (1) First, one high frequency signal is generated.
(2)次に、その1つの高周波信号を複数の出力系統に
分配する。(2) Next, that one high frequency signal is distributed to multiple output systems.
(3)次に、その分配した高周波信号を、マルチビーム
半導体レーザを構成する複数の半導体レーザ素子におい
て選別された半導体レーザ素子(例えば全素子)のそれ
ぞれに個別に印加重畳して戻り光雑音を抑圧する。(3) Next, the distributed high-frequency signal is applied to each of the selected semiconductor laser elements (for example, all the elements) of the plurality of semiconductor laser elements constituting the multi-beam semiconductor laser and is individually applied and multiplexed to eliminate the return optical noise. suppress.
である。これによって、選別された半導体レーザ素子の
それぞれに、同一周波数の高周波信号を重畳して、再生
時のビート信号の発生を防止する。It is. Thereby, a high frequency signal having the same frequency is superimposed on each of the selected semiconductor laser elements, thereby preventing the generation of a beat signal during reproduction.
以上のように構成した実施例の動作および作用を述べる
。本実施例では、マルチビーム半導体レーザlの全素子
が選別された半導体レーザ素子となっている。再生時に
は、再生用パワーのレーザビームを発するよう、各半導
体レーザ駆動回路3によって各半導体レーザ素子2に直
流電流が流される。これと同時に、高周波発振回路4で
発生された1つの高周波信号が、分配器5を継由し分配
されて各半導体レーザ素子2の駆動電流に重畳される。The operation and effect of the embodiment configured as above will be described. In this embodiment, all elements of the multi-beam semiconductor laser I are selected semiconductor laser elements. During reproduction, each semiconductor laser drive circuit 3 causes a direct current to flow through each semiconductor laser element 2 so as to emit a laser beam with reproduction power. At the same time, one high frequency signal generated by the high frequency oscillation circuit 4 is distributed through the distributor 5 and superimposed on the drive current of each semiconductor laser element 2.
これによって、各半導体レーザ素子2の戻り光雑音が抑
圧される。上記において、各半導体レーザ素子2の駆動
電流に重畳される高周波信号は、一つの高周波信号をも
とに分配したものであるから、それぞれ同一の周波数で
あり、記録情報の再生信号帯域に混入するビート信号が
発生する虞れは無くなる。従って、マルチビーム半導体
レーザlを用いるマルチビーム光ヘッドにおいて、記憶
媒体に各半導体レーザ素子2が発するレーザビームを集
光して、並列的に情報の再生を行う際に、その再生動作
が安定化され、再生信号品質が長期に亘って安定し向上
する。This suppresses the return optical noise of each semiconductor laser element 2. In the above, the high-frequency signals superimposed on the drive current of each semiconductor laser element 2 are distributed based on one high-frequency signal, so they have the same frequency and do not mix into the reproduced signal band of recorded information. There is no possibility that a beat signal will occur. Therefore, in a multi-beam optical head using a multi-beam semiconductor laser 1, when the laser beams emitted from each semiconductor laser element 2 are focused on a storage medium and information is reproduced in parallel, the reproduction operation is stabilized. As a result, the reproduced signal quality is stabilized and improved over a long period of time.
なお、上記の実施例においてはマルチビーム半導体レー
ザ1を対象としたが、シングルビーム半導体レーザを所
与の個数並べて複数のビームを得る構成であっても良い
。この場合には各半導体レーザ素子2の戻り光雑音特性
は異なることもあるので、分配器5に各出力端子への高
周波信号振幅の調整機能を内蔵させても良い。また、分
配器5からマルチビーム半導体レーザ1の全素子に高周
波信号を供給する構成としたが、半導体レーザ素子2(
配線を含む)間の電磁結合によっても高周波信号は供給
されるので、全素子数よりも少ない所与の半導体レーザ
素子(例えば1つおきの半導体レーザ素子)にのみ分配
器5から高周波信号を供給する構成としてら良い。この
ように、本発明はその主旨に沿って種々に応用され、種
々の実施態様を取り得るものである。Although the above embodiment deals with the multi-beam semiconductor laser 1, a configuration may also be adopted in which a given number of single-beam semiconductor lasers are arranged to obtain a plurality of beams. In this case, since the return optical noise characteristics of each semiconductor laser element 2 may differ, the distributor 5 may have a built-in function for adjusting the amplitude of the high-frequency signal to each output terminal. In addition, although the distributor 5 is configured to supply high-frequency signals to all elements of the multi-beam semiconductor laser 1, the semiconductor laser element 2 (
(including wiring), the high-frequency signal is supplied from the distributor 5 only to a given semiconductor laser element (for example, every other semiconductor laser element), which is less than the total number of elements. It would be nice to have a configuration that does that. As described above, the present invention can be applied in various ways and can take various embodiments in accordance with its gist.
[発明の効果]
以上の説明で明らかなように、本発明の高周波重畳装置
および高周波重畳方法によれば、1つの高周波発振回路
と、1つの入力信号を選別された半導体レーザ素子の数
と同数の出力端子へ伝達する1つの分配器とを備え、前
記高周波発振回路の出力を前記分配器へ入力し、前記分
配器の1つの出力端子と前記選別された半導体レーザ素
子の1つとを各々個別に接続し、選別された半導体レー
ザ素子の全部に同一周波数の高周波信号を重畳印加する
ようにしたので、再生信号帯域に混入する不要なビート
信号が発生しないという利点がある。[Effects of the Invention] As is clear from the above description, according to the high frequency superimposition device and the high frequency superposition method of the present invention, one high frequency oscillation circuit and one input signal can be processed in the same number as the number of semiconductor laser elements from which one input signal is selected. the output terminal of the high frequency oscillation circuit is input to the distributor, and one output terminal of the distributor and one of the selected semiconductor laser elements are individually connected to each other. Since a high frequency signal of the same frequency is superimposed and applied to all of the selected semiconductor laser elements, there is an advantage that unnecessary beat signals that mix into the reproduced signal band are not generated.
したがって、高品質な再生信号を長期に亘って維持でき
るという利点がある。Therefore, there is an advantage that a high quality reproduced signal can be maintained for a long period of time.
第1図は本発明の一実施例を示すブロック図、第2図は
分配器の構成例を示すブロック図、第3図は従来例のブ
ロック図である。
1・・・マルヂビーム半導体レーザ、2a,2b,・・
・,2n・・・半導体レーザ素子、3a,3b,・・・
3n・・・半導体レーザ駆動回路、4・・・高周波発振
回路、5・・・分配器。
17ノレ千ビーム半4祥レーデ
2a,2b,−2n半4体レーサ゜蒼十3a,3b,・
−・3n半鵬イ木レープ”リ勧回語4畠F8波先撮回誇
5分配番
第2図
第1図
第3図FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a block diagram showing an example of the configuration of a distributor, and FIG. 3 is a block diagram of a conventional example. 1...Multi-beam semiconductor laser, 2a, 2b,...
・, 2n... semiconductor laser element, 3a, 3b,...
3n... Semiconductor laser drive circuit, 4... High frequency oscillation circuit, 5... Distributor. 17 nore 1000 beam half 4-sho lede 2a, 2b, -2n half 4 body racer゜Aoju 3a, 3b,・
-・3n Hanpeng Iki Rape” Rikan word 4 Hatake F8 wave front shooting times 5 distribution number 2 figure 1 figure 3
Claims (2)
対物レンズで記憶媒体上に集光し並列的に情報の記録再
生を行うマルチビーム光ヘッドの半導体レーザ駆動回路
における高周波重畳装置において、 1つの高周波信号を発生する高周波発振回路と、上記1
つの高周波信号を入力信号として複数に分配する複数の
出力端子を有しその出力端子を上記複数の半導体レーザ
素子の選別したそれぞれに個別に接続する1つの分配器
とを具備することを特徴とする高周波重畳装置。(1) In a high frequency superimposition device in a semiconductor laser drive circuit of a multi-beam optical head that focuses beams emitted by a plurality of semiconductor laser elements onto a storage medium using a single objective lens and records and reproduces information in parallel, 1 a high-frequency oscillation circuit that generates two high-frequency signals;
and a distributor having a plurality of output terminals for distributing one high-frequency signal as an input signal to a plurality of input signals and individually connecting the output terminals to each of the selected plurality of semiconductor laser elements. High frequency superposition device.
対物レンズで記憶媒体上に集光し並列的に情報の記録再
生を行うマルチビーム光ヘッドの半導体レーザ駆動方法
における高周波重畳方法において、 まず1つの高周波信号を発生し、 次に上記1つの高周波信号を複数に分配し、次に上記分
配した高周波信号を上記複数の半導体レーザ素子の選別
したそれぞれに個別に印加重畳することを特徴とする高
周波重畳方法。(2) In a high frequency superimposition method in a semiconductor laser driving method for a multi-beam optical head in which beams emitted by multiple semiconductor laser elements are focused onto a storage medium using a single objective lens and information is recorded and reproduced in parallel, firstly, It is characterized by generating one high frequency signal, then distributing the one high frequency signal to a plurality of signals, and then applying and superimposing the distributed high frequency signal to each of the selected plurality of semiconductor laser elements individually. High frequency superposition method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1114499A JPH02292741A (en) | 1989-05-08 | 1989-05-08 | Device and method for superimposing high frequency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1114499A JPH02292741A (en) | 1989-05-08 | 1989-05-08 | Device and method for superimposing high frequency |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02292741A true JPH02292741A (en) | 1990-12-04 |
Family
ID=14639285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1114499A Pending JPH02292741A (en) | 1989-05-08 | 1989-05-08 | Device and method for superimposing high frequency |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02292741A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217192A (en) * | 1992-02-05 | 1993-08-27 | Mitsubishi Electric Corp | High frequency superposing device for multi-beam optical head |
JP2003059078A (en) * | 2001-08-08 | 2003-02-28 | Tdk Corp | High frequency superimposed module for optical pickup |
-
1989
- 1989-05-08 JP JP1114499A patent/JPH02292741A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217192A (en) * | 1992-02-05 | 1993-08-27 | Mitsubishi Electric Corp | High frequency superposing device for multi-beam optical head |
JP2003059078A (en) * | 2001-08-08 | 2003-02-28 | Tdk Corp | High frequency superimposed module for optical pickup |
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