JPH02290008A - Metallized plastic film capacitor - Google Patents
Metallized plastic film capacitorInfo
- Publication number
- JPH02290008A JPH02290008A JP11083589A JP11083589A JPH02290008A JP H02290008 A JPH02290008 A JP H02290008A JP 11083589 A JP11083589 A JP 11083589A JP 11083589 A JP11083589 A JP 11083589A JP H02290008 A JPH02290008 A JP H02290008A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plastic film
- metallized plastic
- dielectric layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002985 plastic film Substances 0.000 title claims abstract description 50
- 229920006255 plastic film Polymers 0.000 title claims abstract description 50
- 239000003990 capacitor Substances 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 9
- 229920000547 conjugated polymer Polymers 0.000 claims abstract description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 35
- 239000000178 monomer Substances 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 239000004922 lacquer Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- -1 for example Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011104 metalized film Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000379 polypropylene carbonate Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電気機器、情報機器などの電子回路に使用す
る金属化プラスチックフィルムコンデンザに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a metallized plastic film capacitor used in electronic circuits such as electrical equipment and information equipment.
［従来の技術］
金属化プラスチックフィルムコンデンサは、金属化プラ
スチックフィルムの両面または片面に、電極引出し部を
幅方向の両側に残して誘電体層を形成し、これを積層ま
たは巻回してその両側にメタリコン電極を形成してなる
ものである。[Prior Art] A metallized plastic film capacitor is produced by forming a dielectric layer on both sides or one side of a metallized plastic film, leaving electrode extensions on both sides in the width direction, and then laminating or winding the dielectric layer on both sides of the metallized plastic film. It is formed by forming a metallicon electrode.
従来、金属化プラスチックフィルムに形成する誘電体層
の祠料としては、例えば、ポリエチレンテレフタレー１
・、ポリプロピレン、ポリカーボネトのような汎用のポ
リマーが用いられている。Conventionally, as an abrasive material for a dielectric layer formed on a metallized plastic film, for example, polyethylene terephthalate 1
・General-purpose polymers such as polypropylene and polycarbonate are used.
一方、近年の超小型電子機器の発展に伴い、益々小型で
、容量範囲の広い高信頼性の金属化プラスチックフィル
ムコンデンザが要望されている。このような小型で容量
範囲の広いコンデンザを得るためには、誘電体層の厚み
を薄くすることが必要となるか、前記の汎用のポリマー
から従来の成膜技術により得られるフィルムの厚みは、
数μｍ 前後までしか薄くできないため、これが、小型
化の大きな障害となっている。また、前記の汎用のポリ
マーから得られる金属化プラスチックフィルムコンデン
サは、耐熱性の点でもセラミックコンデンサより劣るた
め、このことが、コンデンザの基板」二への自動マウン
ト実施上の障害となっている。On the other hand, with the recent development of microelectronic devices, there is a demand for highly reliable metallized plastic film capacitors that are increasingly smaller and have a wider capacity range. In order to obtain such a compact capacitor with a wide capacitance range, it is necessary to reduce the thickness of the dielectric layer, or the thickness of the film obtained by conventional deposition techniques from the above-mentioned general-purpose polymers is
This is a major obstacle to miniaturization, as it can only be made thinner to around a few micrometers. Furthermore, metallized plastic film capacitors obtained from the aforementioned general-purpose polymers are also inferior to ceramic capacitors in terms of heat resistance, which poses an obstacle to automatic mounting of capacitors onto substrates.
また、第６図に示すように、両面金属化プラスチックフ
ィルム２１の蒸着電極２２の表面にラッカーコーティン
グなどにより誘電体としてのラッカー膜２３を形成して
なるラッカーコーティング両面金属化プラスチックフィ
ルムを使用した金属化プラスチックフィルムコンデンザ
も存在しているが、この場合ラッカー膜２３の厚みも、
数μｍ前後までしか薄くできないため、小型化か困姫゛
である。Further, as shown in FIG. 6, a lacquer-coated double-sided metallized plastic film in which a lacquer film 23 is formed as a dielectric material by lacquer coating or the like on the surface of the vapor-deposited electrode 22 of a double-sided metallized plastic film 21 is also used. There are also plastic film capacitors, but in this case the thickness of the lacquer film 23 is also
Since the thickness can only be reduced to around several micrometers, miniaturization is difficult.
以上のような欠点を解決し、誘電体層の超薄膜化可能な
技術として、特開昭６ ２ − １ ４ １ ４ ３．
０号公報に示す技術が存在している。As a technology that solves the above-mentioned drawbacks and makes it possible to make the dielectric layer ultra-thin, it is disclosed in Japanese Patent Application Laid-Open No. 62-141-43.
There is a technology shown in Publication No. 0.
この技術は、電解重合法による導電性高分子フィルムと
金属蒸着層とを交互に形成し、その後、脱ドーピングし
て誘電体層とし、陽極板ごと、或いは前記金属化フィル
ムを剥離してコンデンザとするものである。This technology involves alternately forming conductive polymer films and metal vapor deposited layers by electrolytic polymerization, then dedoping to form a dielectric layer, and removing the entire anode plate or the metallized film to form a capacitor. It is something to do.
しかしながら、この技術においては、溶液中での電解重
合と、真空中での金属蒸着というように大きな格差のあ
る雰囲気中での加工を交互に繰り返すことから、工程間
の予備処理が繁雑となる欠点があった。加えて、バッチ
処理となり、陽極板を用いるため、長尺のフィルムを得
ることができず、コンデンザを製造する上で、生産性は
非常に低く、実用的ではなかった。さらに、導電性高分
子フィルム表金属蒸着層とを交互に積層した後、脱ドー
ピングを行うことから、ドーパン１・の拡散路が限定さ
れ、且つ脱ドーピング液との接触が不十分で脱ドーピン
グかスムーズに行なわれないため、絶縁抵抗の低い誘電
体層しか寄られず、この点で実用性が劣り、また脱ドー
ピング工程に長時間を要するため、生産性に劣る問題が
あった。However, this technology has the disadvantage that pretreatment between processes is complicated because electrolytic polymerization in a solution and metal deposition in a vacuum are performed in different atmospheres, which are repeated alternately. was there. In addition, since it is a batch process and uses an anode plate, it is not possible to obtain a long film, and the productivity is extremely low and impractical for manufacturing capacitors. Furthermore, since dedoping is performed after alternately laminating metal vapor deposited layers on the conductive polymer film surface, the diffusion path of dopan 1 is limited, and contact with the dedoping solution is insufficient, resulting in dedoping. Since the dedoping process is not carried out smoothly, only a dielectric layer with low insulation resistance can be deposited, which makes it less practical.Also, since the dedoping process takes a long time, there is a problem of poor productivity.
［発明が解決しようとする課題］
−１二述したように、従来技術においては、誘電体層と
して用いられるフィルム厚、或いはコーティングフィル
ム厚が数μｎ］前後にしか薄くできないため、コンデン
ザを小型化できない欠点があり、また、誘電体として、
汎用のポリマーを使用した場合には、耐熱性に劣り、基
板上への自動マウント実施が困難となる欠点があった。[Problems to be Solved by the Invention] -1 As mentioned above, in the conventional technology, the thickness of the film used as the dielectric layer or the thickness of the coating film can only be reduced to around several microns, so it is difficult to miniaturize the capacitor. There is a drawback that it cannot be used, and as a dielectric,
When a general-purpose polymer is used, it has a drawback that it has poor heat resistance and is difficult to automatically mount on a substrate.
一方、超薄膜化の従来技術も、電解重合と金属蒸着とを
交互に行い、後に脱ドーピングするために、その生産性
に問題かあった。On the other hand, the conventional technology for making ultra-thin films also involves problems in productivity because electrolytic polymerization and metal vapor deposition are performed alternately and dedoping is performed afterwards.
本発明は、上記のような従来技術の課題を解決するため
に提案されたものであり、その目的は、誘電体層の超薄
膜化を可能とすることにより、小型・大容量で、耐熱性
、実用性及び生産性に優れた金属化プラスチックフィル
ムコンデンサを提供することである。The present invention was proposed in order to solve the problems of the prior art as described above, and its purpose is to make the dielectric layer ultra-thin, thereby achieving a small size, large capacity, and high heat resistance. The object of the present invention is to provide a metallized plastic film capacitor with excellent practicality and productivity.
［課題を解決するための手段］
本発明は、両面金属化プラスチックフィルムの両面また
は片面に、電極引出し部を幅方向の両側を残して電解重
合薄膜誘電体層を形成し、これを積層または巻回してそ
の両側にメタリコン電極を形成し、且つ前記電解重合薄
膜誘電体層の月料として、ポリチオフェン、ポリピロー
ル、ポリアニリン、これらのポリマーを構成するモノマ
ーの誘導体のポリマーなどに代表されるπ電子共役系ポ
リマーを用いたことを特徴としている。[Means for Solving the Problems] The present invention involves forming an electropolymerized thin film dielectric layer on both sides or one side of a double-sided metallized plastic film, leaving the electrode extension portions on both sides in the width direction, and then laminating or winding the thin film dielectric layer. π-electron conjugated systems such as polythiophene, polypyrrole, polyaniline, polymers of derivatives of monomers constituting these polymers, etc. are used as the material for the electropolymerized thin film dielectric layer. It is characterized by the use of polymer.
また、両面金属化プラスチックフィルムの材料としては
、ポリエステル、ポリイミド、ポリフェニレンスルフィ
ド、ポリアミド、ポリイミドアミド、ポリエーテルサル
ホン、ポリエーテルイミド、ポリエーテルエーテルケト
ンなどに代表される耐熱プラスチックを使用することが
可能である。In addition, heat-resistant plastics such as polyester, polyimide, polyphenylene sulfide, polyamide, polyimide amide, polyether sulfone, polyether imide, polyether ether ketone, etc. can be used as the material for the double-sided metalized plastic film. It is.
さらに、電解重合薄膜誘電体層として、電解重合法によ
り薄膜化した導電性高分子を電気化学的に脱ドーピング
し、電気伝導度を１０−５ｓ／ｃｍ以下にした高分子フ
ィルムを使用することが考えられる。Furthermore, as the electropolymerized thin film dielectric layer, it is possible to use a polymer film in which a conductive polymer made into a thin film by electrolytic polymerization is electrochemically dedoped to have an electrical conductivity of 10-5 s/cm or less. Conceivable.
［作用］
まず、本発明においては、電解重合法を使用して誘電体
層を形成しているため、誘電体層の厚みを超薄膜化でき
る。即ち、電解重合法は、導電性高分子フィルムを与え
るモノマ−を、金属化フィルムの蒸着電極を陽極として
通常の電解反応における陽極酸化によって連続的に重合
させ、陽極電極上にモノマーからなる導電性高分子フィ
ルムを析出させる方法であり、この際、モノマ−の種順
によって用いる溶媒、電解質、電極などを適宜選択する
ことができる。この電解重合法を用いることにより、導
電性高分子フィルムの膜厚は、通電量により自由に制御
可能となり、容易に０．１μｍ以下の超薄膜の導電性高
分子フィルムを形成することができ、従って、コンデン
サの単位体積当たりの容量を大きくできる。また、この
ように、膜厚を自由に制御できることから、同一の金属
化プラスチックフィルムにて幅広い容量範囲のコンデン
サを製作できるため、生産性に優れている。[Function] First, in the present invention, since the dielectric layer is formed using an electrolytic polymerization method, the thickness of the dielectric layer can be made extremely thin. That is, in the electrolytic polymerization method, a monomer that provides a conductive polymer film is continuously polymerized by anodic oxidation in a normal electrolytic reaction using a vapor-deposited electrode of a metallized film as an anode. This is a method of depositing a polymer film, and at this time, the solvent, electrolyte, electrode, etc. to be used can be appropriately selected depending on the order of monomer species. By using this electrolytic polymerization method, the thickness of the conductive polymer film can be freely controlled by the amount of current applied, and an ultra-thin conductive polymer film of 0.1 μm or less can be easily formed. Therefore, the capacitance per unit volume of the capacitor can be increased. Furthermore, since the film thickness can be freely controlled in this way, capacitors with a wide range of capacities can be manufactured using the same metallized plastic film, resulting in excellent productivity.
次に、このような超薄膜の導電性高分子フィルムを形成
した両面金属化プラスチックフィルムに、適当な条件下
で連続的な電気化学的脱ドーピングを施せば、脱ドーピ
ング液との接触面積が大きいため、ドーパントの拡散が
早く、超薄膜の導電性高分子フィルムは短時間のうちに
容易に誘電体層に変化する。従って、短時間で誘電率の
大きい超薄膜の誘電体層を形成でき、この点でも小型・
大容量化に貢献でき、且つ生産性の向上にも利点がある
。また、電解重合と脱ドーピングとは、共に液中にて通
電する加工であるため、工程間の予備処理が不要であり
、その意味で、連続的な処理を繰り返し行うことが可能
で、処理時間を短縮化でき、また、設備も簡略化できる
ため、この点でも生産性に優れている。Next, if a double-sided metallized plastic film with such an ultra-thin conductive polymer film is subjected to continuous electrochemical dedoping under appropriate conditions, the contact area with the dedoping solution will be large. Therefore, the dopant diffuses quickly, and the ultra-thin conductive polymer film easily transforms into a dielectric layer in a short time. Therefore, an ultra-thin dielectric layer with a high dielectric constant can be formed in a short period of time, and in this respect, it is also possible to form a small and compact dielectric layer.
It can contribute to larger capacity and also has the advantage of improving productivity. In addition, since electrolytic polymerization and dedoping are both processes in which electricity is applied in the liquid, there is no need for preliminary treatment between processes. It is also excellent in productivity because it can shorten the time and simplify the equipment.
さらに、以上のように電解重合薄膜フィルムを形成した
両面金属化プラスチックフィルムを、巻回または積層し
てなる金属化プラスチックフィルムコンデンザの等価回
路は、電解重合法で形成された膜厚０．１μｍ以下の電
解重合薄膜フィルムコンデンサと、膜厚数μｍの金属化
ブラスヂックフィルムコンデンサとの並列回路となるが
、この場合、電解重合法で形成された電解重合薄膜フィ
ルムが膜厚０． １μｍ以下の超薄膜であるため、コ
ンデンサの容量の大部分をこの電解重合薄膜フィルムコ
ンデンサ部分で負担することになり、全体としてのコン
デンサの小型・大容量化に大きく貢献できる。Furthermore, the equivalent circuit of a metallized plastic film capacitor made by winding or laminating double-sided metallized plastic films formed with electropolymerized thin films as described above has a film thickness of 0.1 μm formed by electrolytic polymerization. The following electropolymerized thin film capacitor and a metallized brass film capacitor with a film thickness of several micrometers are connected in parallel, but in this case, the electrolytic polymerized thin film formed by the electrolytic polymerization method has a film thickness of 0. Since it is an ultra-thin film of 1 μm or less, most of the capacitance of the capacitor is borne by this electropolymerized thin film capacitor portion, which can greatly contribute to making the capacitor smaller and larger in capacity as a whole.
なお、本発明において、電解重合薄膜誘電体層の祠料と
して使用しているπ電子共役系ポリマーは、電界重合法
によってフィルム状に析出することが可能であることに
加えて、中性状態で安定で且つ誘電率が高いため、小型
・大容量化に貢献でき、実用性に優れている。また、π
電子共役系ポリマーは耐熱性にも優れているため、コン
デンサの耐熱性の向上にも貢献できる。In addition, in the present invention, the π-electron conjugated polymer used as an abrasive material for the electrolytically polymerized thin film dielectric layer can be deposited in a film form by electrolytic polymerization, and can also be deposited in a neutral state. Because it is stable and has a high dielectric constant, it can contribute to smaller size and larger capacity, and has excellent practicality. Also, π
Electronically conjugated polymers also have excellent heat resistance, so they can also contribute to improving the heat resistance of capacitors.
一方、両面金属化プラスチックフィルムの材料として、
ポリエステル、ポリイミド、ポリフェニレンスルフィド
、ポリアミド、ポリイミドアミド、ポリエーテルサルホ
ン、ポリエーテルイミド、ポリエーテルエーテルケトン
を含む種類の耐熱プラスチックを使用すれば、π電子共
役系ポリマーを祠料とする電解重合薄膜誘電体層と併せ
て、コンデンサの耐熱性を向上できる。On the other hand, as a material for double-sided metallized plastic film,
Electropolymerized thin film dielectrics using pi-electron conjugated polymers can be prepared using heat-resistant plastics of the types including polyester, polyimide, polyphenylene sulfide, polyamide, polyimide amide, polyether sulfone, polyether imide, and polyether ether ketone. Together with the body layer, the heat resistance of the capacitor can be improved.
また、電解重合薄膜誘電体層の形成に当たっては、電解
重合法により薄膜化した導電性高分子を電気化学的に脱
ドーピングし、電気伝導度を低下させることが考えられ
るが、この場合の電気伝導度は、少なくとも１０−５ｓ
／ｃｍ以下、好ましくはＩＯ’ｓ／ｃｍ以下とする。こ
れは、脱ドーピング後の電気伝導度がＩＯ’ｓ／ｃｍを
越える場合は、絶縁抵抗が低くなり、実用的な金属化プ
ラスチックフィルムコンデンサが得られないからである
。In addition, when forming an electropolymerized thin film dielectric layer, it is possible to electrochemically dedope the conductive polymer made into a thin film by electrolytic polymerization to reduce the electrical conductivity. degree is at least 10-5s
/cm or less, preferably IO's/cm or less. This is because if the electrical conductivity after dedoping exceeds IO's/cm, the insulation resistance will be low and a practical metallized plastic film capacitor cannot be obtained.
［実施例］
以下に、本発明を適用して金属化プラスチックフィルム
コンデンサを製造したー実施例を、第１図乃至第５図を
参照して具体的に説明する。[Example] Hereinafter, an example in which a metallized plastic film capacitor was manufactured by applying the present invention will be specifically described with reference to FIGS. 1 to 5.
まず、第１図に示すように、本実施例においては、プラ
スチックフィルムとして、厚さ３ Ｉｌｍ、幅４．５ｍ
ｍのポリフェニレンスルフイドの長尺なフィルム１を使
用し、このプラスチックフィルム１−の両面にアルミニ
ウムを蒸着して厚さ３００〜５００入の蒸着電極２を形
成し、さらに、幅方向における一方の端部の表面と他方
の端部の裏面に、それぞれ０．５ｍｍのマージン３を形
成した。First, as shown in FIG. 1, in this example, the plastic film has a thickness of 3 lm and a width of 4.5 m.
Using a long film 1 of polyphenylene sulfide having a diameter of 300 mm, aluminum is vapor-deposited on both sides of the plastic film 1- to form a vapor-deposited electrode 2 having a thickness of 300 to 500 mm. A margin 3 of 0.5 mm was formed on the front surface of one end and the back surface of the other end.
次に、このように形成した第１図の両面金属化プラスチ
ックフィルム４を、第２図の右側に示すように、第１槽
５のモノマー溶液６中に浸し、このフィルムの蒸着電極
２を陽極とし、炭素板７を陰極として電流を流し、電解
重合を行った。この場合、モノマー溶液６としては、０
５モル／愛の３−メチルチオフェンと、０，０５モル
／丈のテＩ・ラエチルアンモニウムパークロレ−１・と
を含むベンゾニｌ・リル溶液を使用し、また、両面金属
化プラスチックフィルム４のメタリコンされる両端部の
電極部はワックスでマスクし、この状態で、２〜４ｖ、
２ ｍ Ａ ／ ｃ ｍ ２の電流を流した。この結果
、通電量０．３クーロン／Ｃｍ２て、蒸着電極２の表面
に、膜厚０．２５μｍの青色のポリ３メチルチオフエン
フィルム（電解重合薄膜８）を析出させた。ここで用い
る電解液の種類によって、蒸着電極金属種は、Ａｇ，Ａ
ｕなどの電解液に侵されない金属を適宜選ぶことができ
る。Next, the double-sided metallized plastic film 4 shown in FIG. 1 thus formed is immersed in the monomer solution 6 in the first bath 5, as shown on the right side of FIG. Electrolytic polymerization was carried out by passing a current through the carbon plate 7 as a cathode. In this case, the monomer solution 6 is 0
A benzonyl chloride solution containing 5 mol/a of 3-methylthiophene and 0.05 mol/a of TeI laethylammonium perchloro-1 was used, and a double-sided metallized plastic film 4 was used. The electrodes at both ends to be metallized are masked with wax, and in this state, a voltage of 2 to 4 V is applied.
A current of 2 mA/cm2 was applied. As a result, a blue poly-3-methylthiophene film (electropolymerized thin film 8) having a thickness of 0.25 μm was deposited on the surface of the vapor deposition electrode 2 at a current flow rate of 0.3 coulombs/Cm 2 . Depending on the type of electrolyte used here, the type of vapor deposited electrode metal may be Ag, A
A metal that is not corroded by the electrolyte, such as u, can be selected as appropriate.
続いて、このように第１槽５内にて電解重合薄膜８を形
成された両面金属化プラスチックフィルム４を、第２図
の左側に示すように、第２槽９の脱ドーピング液１０内
に送り込み、この脱ドーピング液１０中で洗浄しながら
２〜４Ｖの逆電位を与えて電気化学的に脱ドーピングし
、電解重合薄膜７を誘電体層に変化させ、この後乾燥し
て、第３図に示すような、電解重合薄膜（誘電体層）８
を有する長尺な両面金属化プラスチックフィルム１，１
を得た。この場合、脱ドーピング液１−０としてはアセ
１・二１・リルを使用した。なお、第２図中、１２は、
長尺な両面金属化プラスチックフィルム４を第１，槽５
、第２槽９内に順次搬送し、送り出すための搬送ローラ
である。Subsequently, the double-sided metallized plastic film 4 on which the electrolytically polymerized thin film 8 was formed in the first tank 5 is placed in the dedoping solution 10 in the second tank 9, as shown on the left side of FIG. While washing in this dedoping solution 10, a reverse potential of 2 to 4 V is applied to electrochemically dedope the electropolymerized thin film 7 to transform it into a dielectric layer, which is then dried. Electropolymerized thin film (dielectric layer) 8 as shown in
A long double-sided metallized plastic film 1,1 having
I got it. In this case, ace1.21.lyl was used as the dedoping liquid 1-0. In addition, in Figure 2, 12 is
A long double-sided metallized plastic film 4 is placed in the first tank 5.
, are conveyor rollers for sequentially conveying the liquids into the second tank 9 and sending them out.
以−１二の各工程を経て得られた長尺な両面金属化プラ
スチックフイルム１１を一枚使用して、第４図に示すよ
うに、大口径の巻ドラム１３に２０００回巻回し、両側
の端面にメタリコンを施してメタリコン層１４を形成し
、１５０℃にて４時間の熱処理を行った後、メタルソ−
１−５によって、半径方向を切ｌｆｒ面とし且つ周方向
に向かって３ｍｍ毎に切断し、多数個の積層フィルムコ
ンデンサー６を作製した。なお、第５図は、作製された
積層フィルムコンデンサ１６の断面拡大図である。Using one long double-sided metallized plastic film 11 obtained through each of the above-12 steps, as shown in FIG. Metallicon is applied to the end face to form a metallicon layer 14, and after heat treatment at 150°C for 4 hours, metal solder is applied.
1-5, a large number of laminated film capacitors 6 were produced by cutting the laminated film capacitors 6 in the radial direction along the lfr plane and cutting them every 3 mm in the circumferential direction. Note that FIG. 5 is an enlarged cross-sectional view of the manufactured multilayer film capacitor 16.
このようにして作製した本実施例の積層フィルムコンデ
ンサ１６の特性を調べたところ、以下の表のような結果
が得られた。When the characteristics of the multilayer film capacitor 16 of this example produced in this manner were investigated, the results shown in the table below were obtained.
表
この表から、本実施例の積層フイルムコンデンサは、単
位体積当たりの容量が大きく、しかも優れた特性を有す
ることがわかる。From this table, it can be seen that the multilayer film capacitor of this example has a large capacity per unit volume and has excellent characteristics.
以下に、本実施例の作用効果をおいては、前述したよう
な従来のコンデンサと比較して説明する。The effects of this embodiment will be explained below in comparison with the conventional capacitor as described above.
まず、誘電体層として汎用のポリマーを使用した従来技
術においては、誘電体層の膜厚を数μｍ前後までしか薄
くできなかったのに対し、本実施例においては、０．２
５μｍと超薄膜化可能であるため、前述のように、単位
体積当たりの容量を極めて大きくすることかできる。ま
た、通電量を適宜変更すれば、膜厚を自由に変更でき、
同一の両面金属化プラスチックフィルム４にて、幅広い
容量範囲のコンデンザを製作できるため、生産性に優れ
ている。First, in the conventional technology that uses a general-purpose polymer as the dielectric layer, the thickness of the dielectric layer could only be reduced to around several μm, whereas in this example, the thickness of the dielectric layer could be reduced to around 0.2 μm.
Since it can be made into an ultra-thin film of 5 μm, the capacitance per unit volume can be extremely increased as described above. In addition, by changing the amount of current applied, the film thickness can be changed freely.
Since capacitors with a wide range of capacities can be manufactured using the same double-sided metallized plastic film 4, productivity is excellent.
次に、電解重合と金属蒸着とを交互に行って超薄膜の誘
電体層を得ていた従来技術においては、脱ドーピング液
との接触面積が小さいため、脱ドピングの効率か悪く、
絶縁抵抗の低い誘電体層しか得られない欠点があったが
、本実施例においては、電解重合薄膜８と脱ドーピング
液１０との接触面積が大きいため、脱ドーピングの効率
が高く、電解重合薄膜８は短時間のうちに容易に誘電体
層に変化する。従って、短時間で誘電率の大きい超薄膜
の誘電体層を形成でき、この点でも小型・大容量化に貢
献でき、且つ生産性の向上にも利点がある。また、電解
重合と金属蒸着とを交互に繰返す技術においては、溶液
中と真空中というように、大きな格差のある雰囲気中で
の加工を交互に繰返すために、加工の予備処理が繁雑と
なり、生産性が低い欠点があったが、本実施例において
は、第１槽５、第２槽９の各液中を順次搬送し、各液中
にて通電する加工であるため、工程間の予備処理を行う
必要もなく、簡略な設備で連続的な加工を繰返し行うこ
とができるため、この点でも生産性に優れてい，る。Next, in the conventional technology in which an ultra-thin dielectric layer was obtained by alternately performing electrolytic polymerization and metal vapor deposition, the contact area with the dedoping solution was small, resulting in poor dedoping efficiency.
Although there was a drawback that only a dielectric layer with low insulation resistance could be obtained, in this example, since the contact area between the electropolymerized thin film 8 and the dedoping liquid 10 is large, the dedoping efficiency is high, and the electropolymerized thin film 8 easily transforms into a dielectric layer in a short time. Therefore, an ultra-thin dielectric layer with a high dielectric constant can be formed in a short period of time, which also contributes to miniaturization and increased capacity, and is also advantageous in improving productivity. In addition, in the technology that alternately repeats electrolytic polymerization and metal vapor deposition, processing is repeated alternately in atmospheres with large disparities, such as in a solution and in a vacuum, which makes preprocessing complicated and increases productivity. However, in this example, the process is carried out sequentially through each liquid in the first tank 5 and second tank 9, and electricity is applied in each liquid, so there is no need for preliminary treatment between processes. There is no need to perform continuous processing, and continuous processing can be performed repeatedly with simple equipment, so productivity is excellent in this respect as well.
さらに、汎用のポリマーを使用していた従来技術におい
ては、耐熱性に劣る欠点があったが、本実施例において
は、電解重合薄膜の材料として、耐熱性に優れたポリチ
オフェンを使用すると共に、プラスチックフィルムとし
て、耐熱性に優れたポリフエニレンスルフィドを使用し
ているため、コンデンザ全体の耐熱性を向」ニすること
ができ、基板上べの自動マウント実施が可能となる利点
もある。Furthermore, conventional technology that used general-purpose polymers had the disadvantage of poor heat resistance, but in this example, polythiophene, which has excellent heat resistance, was used as the material for the electrolytically polymerized thin film, and plastic Since polyphenylene sulfide, which has excellent heat resistance, is used as the film, the heat resistance of the entire capacitor can be improved, and it also has the advantage of being able to be automatically mounted on a substrate.
なお、本発明は前記実施例に限定されるものではなく、
π電子共役系ポリマーを材料として、電解重合法によっ
て誘電体層を形成する限りにおいて、具体的な寸法形状
や材料は自由に変更可能であり、同様の作用効果を得ら
れる。また、電解重合薄膜は、両面金属化プラスチック
フィルムの片面だけでなく、両面に形成することも可能
である。Note that the present invention is not limited to the above embodiments,
As long as the dielectric layer is formed by electrolytic polymerization using a π-electron conjugated polymer as the material, the specific dimensions and materials can be freely changed and the same effects can be obtained. Further, the electrolytically polymerized thin film can be formed not only on one side but also on both sides of the double-sided metallized plastic film.
［発明の効果］
以上説明したように、本発明においては、π電子共役系
ポリマーを材料として、電解重合法によって誘電体層を
形成するという簡単な構成の改良により、超薄膜で且つ
誘電率に優れた誘電体層を得られるため、従来に比べて
、格段の小型・大容量化を実現でき、しかも、耐熱性、
実用性、及び生産性に優れた金属化プラスチックフィル
ムコンデンザを提供することができる。[Effects of the Invention] As explained above, in the present invention, by improving the simple structure of forming a dielectric layer using a π-electron conjugated polymer by electrolytic polymerization, an ultra-thin film with a low dielectric constant can be obtained. Since an excellent dielectric layer can be obtained, it is possible to achieve a significantly smaller size and larger capacity than before, and it also has excellent heat resistance and
A metallized plastic film capacitor with excellent practicality and productivity can be provided.
第１図乃至第５図は本発明の一実施例を示す図であり、
第１図は両面金属化プラスチックフィルムを示す斜視図
、第２図は電解重合工程及び脱ドピング工程を示す断面
図、第３図は誘電体層として電解重合薄膜を形成した両
面金属化プラスチックフィルムを示す斜視図、第４図は
第３図の両面金属化プラスチックフィルムを用いて積層
フィルムコンデンサを製造する工程を示す図、第５図は
第４図のＡ矢視断面図である。第６図は誘電体層として
ラッカー膜を形成した従来の両面金属化プラスチックフ
ィルムを示す斜視図である。
１・・・プラスチックフィルム、２・・・蒸着電極、３
・・・マージン、４・・・両面金属化プラスチックフィ
ルム、５・・・第１槽、６・・・モノマー溶液、７・・
・炭素板、８・・・電解重合薄膜、９・・・第２槽、１
０・・・脱ドーピング液、１１・・・電解重合薄膜を形
成した両面金属化プラスチックフィルム、１２・・・搬
送ローラ、１３・・・巻ドラム、１４・・・メタリコン
層、１５−・・メタルソ− １６・・・積層フィルムコ
ンデンサ。
２１・・・両面金属化プラスチックフィルム、２２・・
・蒸着電極、２３・・・ラッカー膜。
寸1 to 5 are diagrams showing one embodiment of the present invention,
Figure 1 is a perspective view showing a double-sided metalized plastic film, Figure 2 is a sectional view showing the electrolytic polymerization process and dedoping process, and Figure 3 is a double-sided metalized plastic film with an electrolytically polymerized thin film formed as a dielectric layer. FIG. 4 is a diagram showing the process of manufacturing a multilayer film capacitor using the double-sided metallized plastic film of FIG. 3, and FIG. 5 is a sectional view taken along arrow A in FIG. 4. FIG. 6 is a perspective view of a conventional double-sided metallized plastic film on which a lacquer film is formed as a dielectric layer. 1...Plastic film, 2...Vapour-deposited electrode, 3
... Margin, 4... Double-sided metalized plastic film, 5... First tank, 6... Monomer solution, 7...
・Carbon plate, 8... Electrolytic polymerization thin film, 9... Second tank, 1
0... Dedoping liquid, 11... Double-sided metallized plastic film on which an electrolytically polymerized thin film is formed, 12... Conveyance roller, 13... Winding drum, 14... Metallicon layer, 15-... Metal solder -16...Laminated film capacitor. 21... Double-sided metallized plastic film, 22...
- Vapor deposition electrode, 23... lacquer film. size
Claims (3)
面に、電極引出し部を幅方向の両側に残して電解重合薄
膜誘電体層を形成し、これを積層または巻回してその両
側にメタリコン電極を形成し、且つ前記電解重合薄膜誘
電体層の材料として、π電子共役系ポリマーを用いたこ
とを特徴とする金属化プラスチックフィルムコンデンサ
。(1) An electropolymerized thin film dielectric layer is formed on both sides or one side of a double-sided metallized plastic film, leaving electrode extensions on both sides in the width direction, and this is laminated or wound to form metallicon electrodes on both sides. , and a metallized plastic film capacitor characterized in that a π-electron conjugated polymer is used as a material for the electrolytically polymerized thin film dielectric layer.
ポリエステル、ポリイミド、ポリフェニレンスルフィド
、ポリアミド、ポリイミドアミド、ポリエーテルサルホ
ン、ポリエーテルイミド、ポリエーテルエーテルケトン
などに代表される耐熱プラスチックを使用することを特
徴とする特許請求の範囲第１項記載の金属化プラスチッ
クフィルムコンデンサ。(2) As a material for double-sided metallized plastic film,
The metal according to claim 1, characterized in that a heat-resistant plastic typified by polyester, polyimide, polyphenylene sulfide, polyamide, polyimide amide, polyether sulfone, polyether imide, polyether ether ketone, etc. is used. plastic film capacitor.
薄膜化した導電性高分子を電気化学的に脱ドーピングし
、電気伝導度を１０＾−＾５ｓ／ｃｍ以下にした高分子
フィルムを使用することを特徴とする特許請求の範囲第
１項記載の金属化プラスチックフィルムコンデンサ。(3) As the electropolymerized thin film dielectric layer, use a polymer film whose electrical conductivity is 10^-^5s/cm or less by electrochemically dedoping a conductive polymer made into a thin film by electrolytic polymerization. A metallized plastic film capacitor according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11083589A JPH02290008A (en) | 1989-04-28 | 1989-04-28 | Metallized plastic film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11083589A JPH02290008A (en) | 1989-04-28 | 1989-04-28 | Metallized plastic film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02290008A true JPH02290008A (en) | 1990-11-29 |
Family
ID=14545872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11083589A Pending JPH02290008A (en) | 1989-04-28 | 1989-04-28 | Metallized plastic film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02290008A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300126A (en) * | 2006-05-05 | 2007-11-15 | General Electric Co <Ge> | High temperature capacitor and method of manufacturing the same |
| WO2010143410A1 (en) * | 2009-06-11 | 2010-12-16 | パナソニック株式会社 | Capacitor and method for manufacturing capacitor |
| IT201700032290A1 (en) * | 2017-03-23 | 2018-09-23 | Torino Politecnico | CAPACITORS FOR RESONATING CIRCUITS IN POWER APPLICATIONS |
| WO2022058528A1 (en) * | 2020-09-21 | 2022-03-24 | Tdk Electronics Ag | Capacitor and method for the production thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140410A (en) * | 1985-12-16 | 1987-06-24 | 昭和電工株式会社 | Metallized plastic film capacitor |
| JPS62252125A (en) * | 1986-04-25 | 1987-11-02 | 東レ株式会社 | Fil capacitor |
| JPS63137408A (en) * | 1986-11-28 | 1988-06-09 | 松下電器産業株式会社 | Film capacitor |
| JPS6425408A (en) * | 1987-07-21 | 1989-01-27 | Matsushita Electric Ind Co Ltd | Metallized plastic film capacitor |
-
1989
- 1989-04-28 JP JP11083589A patent/JPH02290008A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140410A (en) * | 1985-12-16 | 1987-06-24 | 昭和電工株式会社 | Metallized plastic film capacitor |
| JPS62252125A (en) * | 1986-04-25 | 1987-11-02 | 東レ株式会社 | Fil capacitor |
| JPS63137408A (en) * | 1986-11-28 | 1988-06-09 | 松下電器産業株式会社 | Film capacitor |
| JPS6425408A (en) * | 1987-07-21 | 1989-01-27 | Matsushita Electric Ind Co Ltd | Metallized plastic film capacitor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300126A (en) * | 2006-05-05 | 2007-11-15 | General Electric Co <Ge> | High temperature capacitor and method of manufacturing the same |
| WO2010143410A1 (en) * | 2009-06-11 | 2010-12-16 | パナソニック株式会社 | Capacitor and method for manufacturing capacitor |
| IT201700032290A1 (en) * | 2017-03-23 | 2018-09-23 | Torino Politecnico | CAPACITORS FOR RESONATING CIRCUITS IN POWER APPLICATIONS |
| WO2018172949A1 (en) * | 2017-03-23 | 2018-09-27 | Politecnico Di Torino | Capacitor for resonant circuits in power applications |
| US11101076B2 (en) | 2017-03-23 | 2021-08-24 | Politecnico Di Torino | Capacitor for resonant circuits in power applications |
| WO2022058528A1 (en) * | 2020-09-21 | 2022-03-24 | Tdk Electronics Ag | Capacitor and method for the production thereof |
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