JPH02289857A - Photosolder resist - Google Patents

Photosolder resist

Info

Publication number
JPH02289857A
JPH02289857A JP11133989A JP11133989A JPH02289857A JP H02289857 A JPH02289857 A JP H02289857A JP 11133989 A JP11133989 A JP 11133989A JP 11133989 A JP11133989 A JP 11133989A JP H02289857 A JPH02289857 A JP H02289857A
Authority
JP
Japan
Prior art keywords
compound
resist
polymer compound
meth
methyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11133989A
Other languages
Japanese (ja)
Inventor
Tameichi Ochiai
落合 為一
Noriaki Takahashi
徳明 高橋
Ryuichiro Takasaki
龍一郎 高崎
Noriko Endou
典子 遠洞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Corp
Priority to JP11133989A priority Critical patent/JPH02289857A/en
Publication of JPH02289857A publication Critical patent/JPH02289857A/en
Pending legal-status Critical Current

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  • Macromonomer-Based Addition Polymer (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

PURPOSE:To enhance developability, resolution, solvent resistance, and soldering adhesiveness by incorporating a specified vinyl type polymer compound, a compound having >= 2 polymerizable unsaturated double bonds in the molecule, a photopolymerization initiator, and fine inorganic particles. CONSTITUTION:The photosolder resist contains the vinyl type polymer compound having polymerizable units each represented by formula I (each of R<1> and R<2> being H or methyl, optionally same or different) and carboxylic groups, the compound having >= 2 polymerizable double bonds in the molecule, the photopol y-merization initiator, and the fine inorganic particles, thus permitting the obtained the alkali-developable type solder resist to be improved in developability and resolution and superior in solvent resistance and adhesiveness to copper circuits and solder circuits.

Description

【発明の詳細な説明】 [l#業上の利用分野] 本発明は新規なソルグーレジストに関し、特にプリント
配線板91I1の際のゾルグーレνストや、無電解メッ
キレノスト用として優れた特性を有することから、この
ような永久保護マスク用途として好適なソルグーレジス
トに関するものである.更に、詳しくは、回路形成され
たプリント配線板上に塗布し、必要に応じて溶剤を除去
し、像露允、現像により所望のパターンを形成するプリ
ント配線板用7市トンルグーレノストに関するものであ
る. [従米の技術およびその課題1 プリント配線板製造の際のソルグーレノスト形成法とし
では従未スクリーン印刷法が用いられて米た.しかしな
がら解像性の点で改良が望まれていた. 解像性に優れた方法としで、液状惑允性組成物を回路形
成された基板上に全面塗布し、必要に応じて溶媒を加熱
除去後、マスクを通しで像露光して現像処理によってレ
ノスト形成する7t}レジスト法がある. この現像処理の際、現像液としてLl,1−}リクロロ
エタン、トリクロロエチレン、変性1jクロロエタン等
の有機溶剤が使われている.しかし、これら現像液が基
板に与えるダメージ、作業環境、フ入ト、廃液処理等の
点から有機溶剤現像型からアルカリ現像型への松換が行
なわれつつある.ところが、アルカリ現像型ソルグーレ
ジストは、有轡溶削現像型ゾルグーレシストに比べて、
現像性、耐溶剤性、銅回路や半田回路への密着性等、ソ
ルグーレノスト特性において劣っていた.[WNを解決
するための手段1 本発明者らは、現像性及び解像性が良好であり、耐溶剤
性、銅回路や半田@路への密着性に優れた、アルカリ現
像型ソルグーレジ入トを提供すべく鋭意検討した結果、
本発明に到達した. 即ち、本発明の要肯は、 (a)  一般式(1)で表わされる重合単位を含有し
、且つカルボキシル基を有するビニル系嶌分子化合物、 (式中、R1及(/R”は水素原子又はメチル基を示し
、同じであっても異なっていでもよい.)(b)  重
合性二重結合を1分子中に2個以−ヒ含有する化合物、 (c)  允重合開始剤、 (d)  無fi微粒子 を含有することを特徴とする7才トンルグーレジストに
存する. 以下、本発明を詳細に説明する. 本発明の7t}ソルグーレジストの第一成分は(龜》一
般式(1)で表わされる重合単位を含有し、且つカルボ
キシル基を有するビニル系高分子化合物である. Rl (式中、R1及びR1は水素原子又はメチル基を示し、
同じであっても異なっていてもよい.)この(.)ビニ
ル系^分子化合物は一般式(1)で表わされる重合単位
を5〜50モル%、より好ましくは5〜30モル%含有
する. 一般式(1)で表わされる重合単位の含有量が5モル%
より低い場合には牛田耐熱性が劣化しやすく、逆に50
モル%より多いと保存中にゲル化反応が起こりやすく安
定性が問題となる.また、カルポ斗シル基の含有量は酸
価で4′り300が好ましく、50〜250がより好ま
しい.々ルボキシル基の含有貴が陵価で4より低い場合
にはアルカリ現像液での現像が困難であり、また酸価で
300より多い場合には電気絶縁性が劣化する傾向があ
る. (.)ビニル1kil!Ii分子化合物中へのカルポキ
シル基の導入は高分子化合物を今處する際に予めカルボ
キシル基を有するモ/マー、例えばアクリル酸やメタク
リル酸を興重合虞分として加えたり、商分子化合物中の
活性基、例えば水酸基、アミノ基にノカルボン酸や酸無
水物を^分子反応させる方法等により行なわれる.この
うち、反応の容易さ、制約性からは前者の方法が優れて
いる.また、(a)ビニル系高分子化合物に含まれる楕
虞モノマーとしては、例えばメチル(メタ)アクリレー
ト、エチル(メタ)7クリレート、スチレン、(メタ》
アクリロニトリル、プロビル(メタ)7クリレート、プ
チル〈メタ》7クリレート、ヘキシル(メタ)アクリレ
ート、オクチル(メタ)アクリレート、エチルセロソル
プ(メタ)アクリレート、トリブロそ7ヱ二ル(/夕)
7クリレート、a−メチルスチレン、酢酸ビニル、ビニ
ルフェノール、安m昏mビニル、安息e酸アリル、エチ
ルビニルヶトン、メチルビニルエーテル等が挙げられる
.この中でスチレン、a−メチルスチレン、ビニル7工
/ールが耐熱性を向上させるため、特に好ましい.(a
)ビニル系^分子化合物分子景は5000〜ioo,o
ooが好ましく、より好ましくは7000〜50,00
0である.分子堂がsoooより小さいと塗膜形成能が
低下し、また耐熱性が劣化する傾向にある.逆に100
,000より大鰺い場合には保存中にデル化反応が起き
やすく安定性が問題となる. (a)ビニル系高分子化合物の具体例としては、例えば
下記のものが挙げられる. Llll       t.r+= 第2の成分は、2個以上の末端(メタ)アクリル基を有
する重合性化合物である.これらは、オリゴマー、毫ノ
マーのいずれでも可能であり、具体的にはノオール類、
例えば、エチレングリコール、テトラエチレングリコー
ノレ、ノナエチレングリコール、ポリエチレングリコー
ル、プロピレングリコール、ブタンジオール、ヘキサン
ノオール、ヘキサメチレングリコール、ビス7エノール
八のノヒVaキンエチルエーテル、四臭化ビス71ノ一
ルA1それのノヒドロキンエチルエーテル、シクロヘキ
サンシメタノール等のアクリル陵ノエステル又はメタク
リル酸ノエステル; トリ/チロールプロパン、ペンタ
エリスリトール、ノベンタエリスリトール又はその誘導
体、グリセロール、トリヒドロキシエチルイソン7スレ
ート又はその誘導体等2価以上のボリオール類の(メタ
)アクリル陵エステル; 多価工ポキン化合物、例えば
、とス7エノールA型エボキシ化合物、7工7−ル/ボ
ラック型エボキシ化合物、クレゾール/ボラック型エボ
贅冫化合物と(メタ)アクリル酸との反応生成物; ノ
イソシアネート化合物とジオールモノ7クリレート又は
メタクリレートとの反応生成物、ノイソシアネート化合
物とジオール化合物とノオールモノ(メタ)アクリレー
トとの反応生l及物、ノイソシアネート化合物とノオー
ル化合物とトリオールノ(ノタ)7クリレートとの反応
生虞物;リン酸エステル基を有する(ノタ)アクリレー
ト化合物、具体的には、ビス(メタ)7クリロキシエチ
ル7すス7エ一ト、ビス(7クリロキシエチル)7エエ
ル7すス7ヱート、ビス(メタクリロキシエチル》ブチ
ル7才ス7エート、トリス(メタ)7クリロキシエチル
7すス7ヱート;  シリコーン系(メタ)アクリレー
ト等が挙げられる.これらの中から1つ又は2つ以上が
用いられる. さらに(メタ》アクリaキシエチル7オス7エートなど
の(メタ)アクリル基を1個有するリン酸(メタ)7ク
リレート化合物の添加も好適である.第3の成分は、(
e)光重合開始剤である.A体的にはベンゾイン、ペン
ゾインアルキルエーテル類、7ントラ斗ノン誘導体、ペ
ンズアンスロン誘導体、2.2−シメトキシー2−7エ
ニルアセト7エ/冫、1−ヒPaキンンクロヘキシル7
工二ルケトン、2−メチル−[4−(メチルチオ)7工
:A,]−2一モル7すりノー1−ブロパノン、ベンν
ル誘導体、ベンゾ7エノン誘導体、4,4゜ビスージメ
チル7ミ/べ冫ゾ7エノン、キサントン誘導体、チオキ
サントン誘導体、ビイミグゾール類、トリクロロメチル
ーS−}リアノン類、3.4,3゜,4゛−テトラ(t
−プチルパーオキシヵルポニル)ベンゾ7エノン、及び
これらと色素類、アミン化合物例えばノアルキルアミ7
安息香酸アルキルエステル、アリルチオ尿素、N−7エ
ニルグリシンなどの組合せが挙げられる. 第4の成分は(d)無機微粒子である.A体的には、例
えばクルク、シリカ,硫酸バリウム、炭酸カルシウム、
クレー、カオリン、ベントナイト、珪藻土、アルミナ、
焼結タルク、二酸化チタン、酸化7ンチモン、珪酸ジル
コニウムなどが挙げられる.これらはシランカップリン
グ削などで表面処理して用いることもできる. 以上述べた本発明の7tトンルグーレノストの必須成分
である(a)ビニル系高分子化合物は、塗布溶剤を除く
全固形分に対して10〜80重景%、より好ましくは2
0〜7011k量%含有される.第2の必須成分である
(b)重合性二重結合を一分子中に2個以上含有する化
合物は塗布溶剤を除く全固形分に対して5〜70重1%
、より好ましくは10〜50重量%含有される. 第3の必H4成分である(e)光重合開始剤は塗布溶剤
を除く全固形分に対して0.05〜10重量%、好まし
くは0.5〜6重量%含有される.また、弟4の必須成
分である(d)無機微粒子は塗布溶剤を除く全固形分に
対して2〜80重量%、好ましくは10〜50jlt%
含有される,本発明の7才トンルグーレノストには、他
の重合体、好ましくはアルカリ性水溶液に可溶な重合体
を添加してもよい.例えば、カルポキンル基を含有する
重合体、リン酸基含有重合体、スルホン酸基含有重合体
が挙げられる. 酎熱性及び強度向上のためエボ午シ基含有化合物を添加
することも好ましい,例えば、ビスフェノールA型エボ
キシ樹脂、ノボラック型エボキシ樹脂、トリグリシノル
イソシアヌレート等が挙げられる.特にトリグリシノル
イソシアスレートが好適である. さらに、本発明の7才トンルグーレノストには、その他
必!に応じ、熱重合禁止胴、着色剤、露光可視画剤、現
像促進剤、難燃化剤、消泡剤、密着性向上剤、塗布性改
良剤等を配合してもよい.本発明においては、上記各成
分を混合し、必要ならば塗布溶剤に溶解或いは分散させ
て7才トンルグーレノスト感光液を調製する. 塗布溶剤としては、適当な沸貞を持ちMI&物を溶解ま
たは分散し得るものならば使用可能であるが、例えば、
メチルエチルケトン、メチルイソブロビルケトン、メチ
ルイソプチルケトン、メチル七ロソルプ、エチルセロソ
ルブ、プチルセロソルプ、シクロヘキサノン、セロンル
ブアセテート、メチルセロンルプアセテート、プチルセ
ロンルブアセテート、カルビF−ル、メチルカルビトー
ル、カルビトールアセテート、メチル力ルビトールアセ
テート、プチルカルビトールアセテート、キシレン、ト
ルエン、ブロビレングリコールモ/ノチルエーテル、プ
ロピレングリコールモノエチルエー?ル、ブaピレング
リコールモノメチルエーテル7七テート、ブaビレング
リコールモノエチルエーテルアセテート等が挙げられる
. 7tトンルグーレノスト感光液をプリント配線板等の基
板上に塗布する方法としては、ロールコーター、カーテ
ンコーター、スクリーン印刷法等の公知の方法が用いら
れる. 基板に全面塗布された組成物は、その後、必要ならば溶
剤を除去し、像露光、現像を行なうことにより半田の付
着すべきでない部什をマスクする.この際の現像液とし
ては弱アルカリ水が用いられる. [実施例] 次に、本発明を実施例を用いて具体的に説明するが、本
発明はその要員を越えない限り以下の実施例に限定され
るものではない. 合成例1 撹拌器、温度計、〃ス導入管、還流冷却管を備えた7ラ
スコにスチレン4モル、メタクリル酸5モル、ノオキサ
ン1 . 4 kg,アゾイゾブチロニトリル0.09
モルを入れ窒素気流中80℃の油浴上にて6時間加熱反
応させた. p−メトキシ7エノール0.18モルを加え、さらに2
時問反応させた後、グリシノルメタクリレート1モル、
ドデシルアンモ二9ムクロリド9gを加えた.1時間反
応させた後、反応物を水に再沈澱させて、目的とするビ
ニル系高分子化合物を得た.得られた高分子化合物の分
子量をデルノ{−ミ工一シ1冫クロマトグラ7イーで測
定した結果、重量平均分子量は30,000であった.
実施例1 合成例1により得られたビニル系高分子化合物35kg
,べ冫タエリスリトールトリ7クリレート15kg,べ
冫ゾ7ヱ7ン1 . 6 kgs  ミヒラーケトン0
.1kg,7タロシアニングリーン0.17kg,平均
粒子径1μ齢のタルク17kgをメチルセロソルプに溶
解又は分散させて、7すトンルグーレノスト感光液を調
製した.得られた感光液をカーテンコータ一を用いてプ
リント配線板上に塗布した後、80℃で60分問乾燥し
て7tトンルグーレジスト膜を形虞した.基板上の平均
膜厚は30μ−であった. 次に、2kmの超高圧水銀灯により60c−の距離から
画像マスクフイルムを通しで露光した後、1重量%炭酸
ナトリウム水溶液を用いて3kg/ 04”で1分問ス
プレー現像し、レノスト画像を得た.現像性は良好であ
った.f!−らに光強度8〇一/ c@’の^圧水銀灯
を用いて20c鯵の距離からコンベアスピード1曽/分
で後露光し、評価用試料を得た. 評価用試料中の銅上に75μ輪の幅で形成されたレジス
トパターン部を室温でトリクロロエチレン中に60分間
浸漬した後、強《こすったがレノスト膜の剥離は全く見
られなかった(以下、トリクロロエチレンテストと略記
する).また、同パターン部を260℃の溶融ハング中
に20秒間浸漬したがレジスト膜の剥離は見られなかっ
た(以下、半田酎熱テストと略記する).また、評価用
試料中の銅上に形成されたレジス}lをカミソリで1一
 角100個にクロスカットし、接着テープ剥離テスト
を行なったが、100個全部が完全に接着していた(以
f,クロスカットテストと略記する). 実施例2 実施例1と同様にして得られた7t}ソルグーレジスト
感尤液に、さらにトリグリシノルインシアヌレー}15
kgを加えて7才トンルグーレノスト感光液を調製した
. プリント配線板上にカーテンフーターを用いて7t}ソ
ルグーレジストを塗布した後、80℃で60分開乾燥し
、7r}ゾルグーレノスト膜を形成した.基板上の平均
膜厚は30μ一であった.次に2k替の超高圧水銀灯に
より60c曽の距離から画像マスクフイルムを通して露
光した後、1重量%炭酸ナトリウム水溶液を用いて3k
g/c膳2で1分間スプレー現像し、レノスト画像を得
た.現像性は良好であった. その後、150℃で1時問加熱して熱硬化させ、評価用
試料を得た. 実施例1と同様にトリクロロエチレンテスト、半田耐熱
テスト、クロスカットテストを行なったが、レノスト膜
の剥離は全く見られなかった.比較例1 実施例1で用いたビニル系高分子化合物の代りにノチル
メタクリレートとメタクリル酸の共重合高分子化合物(
モル比7:3、重量乎均分子量io,ooo)を用いた
こと以外は実施例1と同様にして7t}ンルグーレジ入
ト感光液を調製した.実施例1と同様にしてプリント配
線板上にフォトブルグー冫クスト膜を形成し、露光、現
像、後露光して評価用試料を得た. 実施例1と同様に牛田酎熱テストを行なったところ、プ
リント配線板全体にレジスト膜の剥離が見られた. [発明の効果1 本発明によると、現像性、解像性、耐溶剤性、牛田密着
性に優れる7才トソルグーマスクを製造することだでか
、また、使用する現像液が不燃性で作業性に優れ、公害
の問題もなく安価であるため工業的に有用である.
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a new solgo resist, which has excellent properties particularly as a solgo resist for printed wiring boards 91I1 and for electroless plating resists. This article relates to a Solgool resist suitable for use as a permanent protective mask. More specifically, it relates to a seven-layer coating for printed wiring boards that is applied onto a circuit-formed printed wiring board, removes the solvent if necessary, and forms a desired pattern by image exposure and development. It is. [Junior's technology and its issues 1 The Jorubi screen printing method was used as a method for forming Solgur nost in the production of printed wiring boards. However, improvements in resolution were desired. As a method with excellent resolution, a liquid seductive composition is applied to the entire surface of the circuit-formed circuit board, the solvent is removed by heating if necessary, image exposure is carried out through a mask, and development processing is performed to form a renost. 7t} resist method. During this development process, an organic solvent such as Ll,1-}lichloroethane, trichlorethylene, modified 1jchloroethane, etc. is used as a developer. However, due to the damage caused by these developers to the substrate, the working environment, the waste, and the disposal of waste liquids, the organic solvent development type is being replaced by the alkaline development type. However, the alkaline development type solgo resist has the following characteristics compared to the melt-cut development type solgoresist:
Solgurnost properties such as developability, solvent resistance, and adhesion to copper circuits and solder circuits were inferior. [Means for Solving WN 1] The present inventors have developed an alkaline-developable Solgo resist-containing resin which has good developability and resolution, and has excellent solvent resistance and adhesion to copper circuits and solder paths. As a result of careful consideration to provide
We have arrived at the present invention. That is, the gist of the present invention is as follows: (a) a vinyl-based monomer compound containing a polymerized unit represented by the general formula (1) and having a carboxyl group, (wherein R1 and (/R'' are hydrogen atoms); or a methyl group, which may be the same or different.) (b) Compound containing two or more polymerizable double bonds in one molecule, (c) Polymerization initiator, (d) The present invention is described in detail below. The first component of the 7t} Sorgu resist of the present invention is represented by general formula (1). It is a vinyl polymer compound containing a polymerized unit represented by the formula and having a carboxyl group. Rl (wherein R1 and R1 represent a hydrogen atom or a methyl group,
They may be the same or different. ) This (.) vinyl-based molecular compound contains 5 to 50 mol%, more preferably 5 to 30 mol%, of polymerized units represented by general formula (1). The content of polymerized units represented by general formula (1) is 5 mol%
If it is lower than 50, Ushida's heat resistance tends to deteriorate;
If it exceeds mol%, gelation reaction tends to occur during storage and stability becomes a problem. Further, the content of carpotosyl groups is preferably 4'300 in terms of acid value, more preferably 50 to 250. If the carboxylic group content is lower than 4 in terms of acid value, it is difficult to develop with an alkaline developer, and if it is more than 300 in acid value, electrical insulation properties tend to deteriorate. (.) 1 kilo of vinyl! Introducing a carboxyl group into a molecular compound can be carried out by adding a monomer having a carboxyl group, such as acrylic acid or methacrylic acid, as a polymerization component in advance when preparing a polymer compound, or by adding a monomer having a carboxyl group in advance as a polymerizable component, or by adding a monomer having a carboxyl group as a polymerization potential in the commercial compound. This is carried out by a method in which a group such as a hydroxyl group or an amino group undergoes a molecular reaction with a nocarboxylic acid or an acid anhydride. Of these, the former method is superior in terms of ease of reaction and constraints. In addition, examples of the elliptic monomer contained in the vinyl polymer compound (a) include methyl (meth) acrylate, ethyl (meth) 7-acrylate, styrene, (meth)
Acrylonitrile, proyl (meth) 7 acrylate, butyl (meth) 7 acrylate, hexyl (meth) acrylate, octyl (meth) acrylate, ethyl cellosolp (meth) acrylate, tribros 7 (/night)
Examples include 7 acrylate, a-methylstyrene, vinyl acetate, vinylphenol, vinyl benzoate, allyl benzoate, ethyl vinyl ether, and methyl vinyl ether. Among these, styrene, a-methylstyrene, and vinyl 7-hydroxyl are particularly preferred because they improve heat resistance. (a
) Vinyl type ^ molecular compound molecular size is 5000 ~ ioo, o
oo is preferable, more preferably 7000 to 50,00
It is 0. If the molecular size is smaller than sooo, the coating film forming ability tends to decrease and the heat resistance tends to deteriorate. 100 on the contrary
If the mackerel is larger than .000, delification reaction is likely to occur during storage, and stability becomes a problem. (a) Specific examples of the vinyl polymer compound include the following. Lllll t. r+= The second component is a polymerizable compound having two or more terminal (meth)acrylic groups. These can be either oligomers or polymers, and specifically, nools,
For example, ethylene glycol, tetraethylene glycol, nonaethylene glycol, polyethylene glycol, propylene glycol, butanediol, hexaneol, hexamethylene glycol, bis7enol, eightythyl ethyl ether, bis71tetrabromide. A1 Acrylic esters or methacrylic acid esters such as nohydroquine ethyl ether and cyclohexanesimethanol; divalent esters such as tri/tyrolpropane, pentaerythritol, noventaerythritol or derivatives thereof, glycerol, trihydroxyethyl isone 7 slate or derivatives thereof (Meth) acrylic esters of the above polyols; polyvalent engineering compounds, such as tosu-7-enol A-type epoxy compounds, 7-enol/borac-type epoxy compounds, cresol/borac-type evo-luxury compounds; Reaction products with meth)acrylic acid; Reaction products between noisocyanate compounds and diol mono-7 acrylates or methacrylates, reaction products between noisocyanate compounds, diol compounds, and nool mono(meth)acrylates, noisocyanate compounds and Possible reaction products between nool compounds and triolno(nota)7 acrylate; (nota)acrylate compounds having a phosphate ester group, specifically, bis(meth)7cryloxyethyl 7sueth, Bis(7 chloroethyl) 7 ethyl 7 eth, bis(methacryloxyethyl) butyl 7 eth, tris(meth) 7 chloroethyl 7 eth; silicone-based (meth)acrylates, etc. One or more of these may be used.Furthermore, a phosphoric acid (meth)7 acrylate compound having one (meth)acrylic group such as (meth)acrylic axyethyl 7 male heptaate may also be added. Preferably, the third component is (
e) It is a photopolymerization initiator. A-isomers include benzoin, penzoin alkyl ethers, 7-nthranone derivatives, penzanthrone derivatives, 2,2-cymethoxy-2-7-enylaceto 7-ethyl, 1-hy-Paquinyl-chlorhexyl-7
engineering diruketone, 2-methyl-[4-(methylthio)7 engineering:A,]-2 1 mol 7 surino 1-bropanone, ben ν
derivatives, benzo-7enone derivatives, 4,4゜bis-dimethyl-7mi/benzo-7enone, xanthone derivatives, thioxanthone derivatives, biimiguzoles, trichloromethyl-S-}ryanone, 3.4,3゜,4゛-tetra (t
-butylperoxycarponyl)benzo7enone, and these and pigments, amine compounds such as noalkylamine 7
Examples include combinations of benzoic acid alkyl ester, allylthiourea, N-7enylglycine, and the like. The fourth component is (d) inorganic fine particles. Examples of A-isomers include curk, silica, barium sulfate, calcium carbonate,
Clay, kaolin, bentonite, diatomaceous earth, alumina,
Examples include sintered talc, titanium dioxide, heptimony oxide, and zirconium silicate. These can also be used after surface treatment, such as by silane coupling machining. The vinyl polymer compound (a), which is an essential component of the 7 ton Legoulenost of the present invention described above, is 10 to 80% by weight, more preferably 2%, based on the total solid content excluding the coating solvent.
Contains 0 to 7011k%. The second essential component (b) is a compound containing two or more polymerizable double bonds in one molecule, which is 5 to 70% by weight based on the total solid content excluding the coating solvent.
, more preferably 10 to 50% by weight. The photopolymerization initiator (e), which is the third necessary H4 component, is contained in an amount of 0.05 to 10% by weight, preferably 0.5 to 6% by weight, based on the total solid content excluding the coating solvent. In addition, (d) inorganic fine particles, which are essential components of younger brother 4, are 2 to 80% by weight, preferably 10 to 50jlt%, based on the total solid content excluding the coating solvent.
Other polymers, preferably polymers soluble in an alkaline aqueous solution, may be added to the 7-year-old tonrugulenost of the present invention. Examples include polymers containing carpoquinyl groups, polymers containing phosphoric acid groups, and polymers containing sulfonic acid groups. It is also preferable to add a compound containing an epoxy group to improve heat resistance and strength, such as bisphenol A type epoxy resin, novolak type epoxy resin, triglycinol isocyanurate, etc. Particularly suitable is triglycinol isocyanate. In addition, there are other must-haves for the 7-year-old Tonguele Nost of the present invention! Depending on the requirements, thermal polymerization inhibitors, colorants, exposed visible image agents, development accelerators, flame retardants, antifoaming agents, adhesion improvers, coating properties improvers, etc. may be added. In the present invention, the above-mentioned components are mixed and, if necessary, dissolved or dispersed in a coating solvent to prepare a seven-year-old photosensitive solution. As a coating solvent, any solvent can be used as long as it has an appropriate boiling point and can dissolve or disperse MI and materials, but for example,
Methyl ethyl ketone, methyl isobrobyl ketone, methyl isobutyl ketone, methyl heptalosolp, ethyl cellosolve, butyl cellosolp, cyclohexanone, selon rub acetate, methyl selon lup acetate, butyl selon rub acetate, carbiF-ol, methyl carbitol, carbitol acetate, Methyl carbitol acetate, butyl carbitol acetate, xylene, toluene, brobylene glycol mono/notyl ether, propylene glycol monoethyl ether? Examples include pyrene glycol monomethyl ether acetate, butylene glycol monomethyl ether acetate, butylene glycol monoethyl ether acetate, and so on. A known method such as a roll coater, a curtain coater, or a screen printing method can be used to apply the 7 ton Legoulenost photosensitive liquid onto a substrate such as a printed wiring board. After the composition is applied to the entire surface of the substrate, the solvent is removed, if necessary, and the parts to which solder is not to be attached are masked by imagewise exposure and development. Weakly alkaline water is used as the developer in this case. [Examples] Next, the present invention will be specifically explained using examples, but the present invention is not limited to the following examples as long as the number of personnel is not exceeded. Synthesis Example 1 In a 7 flask equipped with a stirrer, a thermometer, a gas inlet tube, and a reflux condenser, 4 moles of styrene, 5 moles of methacrylic acid, and 1. 4 kg, azoisobutyronitrile 0.09
mol was added, and the mixture was heated and reacted on an oil bath at 80°C in a nitrogen stream for 6 hours. Add 0.18 mol of p-methoxy 7-enol and add 2
After a period of reaction, 1 mol of glycinol methacrylate,
9 g of dodecyl ammonium chloride was added. After reacting for 1 hour, the reaction product was reprecipitated in water to obtain the desired vinyl polymer compound. As a result of measuring the molecular weight of the obtained polymer compound using Delno's Chromatograph 7E, the weight average molecular weight was 30,000.
Example 1 35 kg of vinyl polymer compound obtained in Synthesis Example 1
, Beta Erythritol Tri-7 Acrylate 15kg, Beta Erythritol Tri-7 Acrylate 15kg, Beta Erythritol Tri-7 7-1. 6 kgs Michler Ketone 0
.. 1 kg of talocyanine green, 0.17 kg of 7 talocyanine green, and 17 kg of talc with an average particle size of 1 μm were dissolved or dispersed in methyl cellosolp to prepare a 7 ton le goulenost photosensitive solution. The resulting photosensitive solution was applied onto a printed wiring board using a curtain coater and dried at 80° C. for 60 minutes to form a 7 tonne resist film. The average film thickness on the substrate was 30μ. Next, the image mask film was exposed to light from a distance of 60cm using a 2km ultra-high pressure mercury lamp, and then spray developed using a 1% by weight sodium carbonate aqueous solution at 3kg/04'' for 1 minute to obtain a Lennost image. Developability was good.The sample for evaluation was then exposed to light using a high-pressure mercury lamp with a light intensity of 801/c@' from a distance of 20cm at a conveyor speed of 1s/min. A resist pattern formed with a width of 75 μm on the copper in the evaluation sample was immersed in trichlorethylene at room temperature for 60 minutes, and then rubbed vigorously, but no peeling of the Renost film was observed ( (hereinafter abbreviated as trichlorethylene test).Also, the same pattern part was immersed in a molten hang at 260°C for 20 seconds, but no peeling of the resist film was observed (hereinafter abbreviated as solder heat test). The resist formed on the copper in the evaluation sample was cross-cut into 100 square pieces with a razor, and an adhesive tape peeling test was performed, but all 100 pieces were completely adhered (hereinafter referred to as f). (abbreviated as cross-cut test).Example 2 In addition to the 7T Solgool resist sensitizer obtained in the same manner as in Example 1, triglycinolin cyanuride}15 was added.
kg was added to prepare a 7-year-old tongle nost photosensitive solution. A 7T} Solgool resist was applied onto the printed wiring board using a curtain footer, and then opened and dried at 80° C. for 60 minutes to form a 7R}Solgool resist film. The average film thickness on the substrate was 30μ. Next, the image mask film was exposed to light from a distance of 60 cm using a 2K ultra-high pressure mercury lamp, and then 3K was exposed using a 1% by weight sodium carbonate aqueous solution.
Spray development was performed for 1 minute using g/c size 2 to obtain a Renost image. Developability was good. Thereafter, it was heated at 150°C for 1 hour to thermally cure it to obtain a sample for evaluation. A trichlorethylene test, a solder heat resistance test, and a cross-cut test were conducted in the same manner as in Example 1, but no peeling of the Renost film was observed. Comparative Example 1 A copolymerized polymeric compound of notyl methacrylate and methacrylic acid (
A photosensitive solution containing a 7t) resin was prepared in the same manner as in Example 1, except that a molar ratio of 7:3 and a weight average molecular weight of io, ooo) were used. A photobulgoux film was formed on a printed wiring board in the same manner as in Example 1, exposed, developed, and post-exposed to obtain a sample for evaluation. When the Ushida-chu heat test was conducted in the same manner as in Example 1, peeling of the resist film was observed over the entire printed wiring board. [Effect of the invention 1] According to the present invention, it is possible to manufacture a 7-year-old tosorgoo mask that has excellent developability, resolution, solvent resistance, and Ushida adhesion, and the developer used is nonflammable and easy to work with. It is industrially useful because it has excellent properties, no pollution problems, and is inexpensive.

Claims (1)

【特許請求の範囲】[Claims] (1)(a)一般式( I )で表わされる重合単位を含
有し、且つカルボキシル基を有するビニル系高分子化合
物、 ▲数式、化学式、表等があります▼・・・( I ) (式中、R^1及びR^2は水素原子又はメチル基を示
し、同じであっても異なっていてもよい。)(b)重合
性二重結合を1分子中に2個以上含有する化合物、 (c)光重合開始剤、 (d)無機微粒子 を含有することを特徴とするフォトソルダーレジスト。
(1) (a) A vinyl polymer compound containing a polymerized unit represented by the general formula (I) and having a carboxyl group, ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(I) (in the formula , R^1 and R^2 represent a hydrogen atom or a methyl group, and may be the same or different.) (b) A compound containing two or more polymerizable double bonds in one molecule, ( A photo solder resist comprising: c) a photopolymerization initiator; and (d) inorganic fine particles.
JP11133989A 1989-04-28 1989-04-28 Photosolder resist Pending JPH02289857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11133989A JPH02289857A (en) 1989-04-28 1989-04-28 Photosolder resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11133989A JPH02289857A (en) 1989-04-28 1989-04-28 Photosolder resist

Publications (1)

Publication Number Publication Date
JPH02289857A true JPH02289857A (en) 1990-11-29

Family

ID=14558690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11133989A Pending JPH02289857A (en) 1989-04-28 1989-04-28 Photosolder resist

Country Status (1)

Country Link
JP (1) JPH02289857A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289655A (en) * 1990-04-06 1991-12-19 Tamura Kaken Kk Photosensitive resin composition
EP0762208A2 (en) 1995-09-08 1997-03-12 Konica Corporation Light sensitive composition, presensitized lithographic printing plate and image forming method employing the printing plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289655A (en) * 1990-04-06 1991-12-19 Tamura Kaken Kk Photosensitive resin composition
EP0762208A2 (en) 1995-09-08 1997-03-12 Konica Corporation Light sensitive composition, presensitized lithographic printing plate and image forming method employing the printing plate
EP0762208A3 (en) * 1995-09-08 1997-09-17 Konishiroku Photo Ind Light sensitive composition, presensitized lithographic printing plate and image forming method employing the printing plate

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