JPH02284479A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH02284479A JPH02284479A JP1106343A JP10634389A JPH02284479A JP H02284479 A JPH02284479 A JP H02284479A JP 1106343 A JP1106343 A JP 1106343A JP 10634389 A JP10634389 A JP 10634389A JP H02284479 A JPH02284479 A JP H02284479A
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet rays
- layer
- junction surface
- light shielding
- shielding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title description 6
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 17
- 230000035945 sensitivity Effects 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光電変換装置に関し、特に紫外線に照射された
時に生じる漏れ電流の増大を阻止する構造を有する光電
変換装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photoelectric conversion device, and particularly to a photoelectric conversion device having a structure that prevents an increase in leakage current that occurs when irradiated with ultraviolet rays.
従来、この種の光電変換装置としては例えば光ダイオー
ドアレイかある。この光ダイオードアレイは、分光光度
計を始めとする分析装置におけるスペクトル検出器等に
使用され、この構造は第４図（ａ）の断面図に示される
。Conventionally, this type of photoelectric conversion device includes, for example, a photodiode array. This photodiode array is used as a spectrum detector in an analytical device such as a spectrophotometer, and its structure is shown in the cross-sectional view of FIG. 4(a).
ｎ型の半導体基板１の表層部にはｐ＋型の拡散領域２か
形成されている。そして、拡散領域２により形成される
ｐｎ接合面が半導体基板］の表面に接する端部３は、酸
化物層４および多結晶シリコン層５により覆われている
。さらに、多結晶シリコン層５および拡散領域２は酸化
物層６により覆われている。このため、ｐｎ接合面の端
部３は光照射面側から見て紫外線に不透明な多結晶シリ
コン層５によって光シールドされており、紫外線の照射
時に主にこの端部３に生じる漏れ電流の増大はかなり低
減されている。A p + -type diffusion region 2 is formed in the surface layer of an n-type semiconductor substrate 1 . The end portion 3 where the pn junction surface formed by the diffusion region 2 contacts the surface of the semiconductor substrate is covered with an oxide layer 4 and a polycrystalline silicon layer 5. Furthermore, the polycrystalline silicon layer 5 and the diffusion region 2 are covered with an oxide layer 6. For this reason, the end 3 of the pn junction surface is optically shielded by the polycrystalline silicon layer 5 that is opaque to ultraviolet rays when viewed from the light irradiation surface side, and an increase in leakage current mainly occurs at this end 3 when irradiated with ultraviolet rays. has been significantly reduced.
しかしながら、一般に、酸化物層４，６には正極性の電
荷が帯電し、特に、紫外線の照射時においては電荷量か
増大する。なお、イ争かてはあるか多結晶シリコン層５
から紫外線か漏れ、酸化物層４に帯電する電荷量も増大
する。一方、拡散領域２はｐ＋型に形成されており、正
極性に荷電された不純物原子であるアクセプタが存在し
ている。However, in general, the oxide layers 4 and 6 are charged with positive polarity, and the amount of charge increases particularly when irradiated with ultraviolet rays. It should be noted that there is no dispute that the polycrystalline silicon layer 5
Ultraviolet rays leak from the oxide layer 4, and the amount of charge charged on the oxide layer 4 also increases. On the other hand, the diffusion region 2 is formed to be p+ type, and has acceptors which are positively charged impurity atoms.
このため、酸化物層４，６に帯電された正極性の電荷に
より、正極性に荷電された拡散領域２の中の正孔は斥け
られ、ｐｎ接合面の端部３に形成される空乏領域は、第
４図（ｂ）に示されるように光照力・１面側に曲げられ
る。この結果、空乏領域に形成される電界はこの端部３
に集中し、紫外線照射時における漏れ電流は増大する。Therefore, the positively charged holes in the diffusion region 2 are repelled by the positive charges on the oxide layers 4 and 6, and a depletion is formed at the end 3 of the pn junction surface. The area is bent toward the illumination power side as shown in FIG. 4(b). As a result, the electric field formed in the depletion region is
The leakage current increases during ultraviolet irradiation.
さらに、酸化物層４の膜厚は厚いため、多結晶シリコン
層５によって本来光シールドされるはずの端部３は紫外
線か照射され易い状態にある。従って、端部３で発生す
るＭれ電流の増大の阻止はいまた完全ではなく、紫外線
帯域における光電変換装置としての検出感度は低下し、
スペクトル検出等の機能の精度は劣化するという課題が
生じていた。Furthermore, since the oxide layer 4 is thick, the end portion 3, which should originally be optically shielded by the polycrystalline silicon layer 5, is easily irradiated with ultraviolet rays. Therefore, the increase in the M leakage current generated at the end portion 3 is not completely prevented, and the detection sensitivity as a photoelectric conversion device in the ultraviolet band decreases.
A problem has arisen in that the accuracy of functions such as spectrum detection deteriorates.
本発明はこのような課題を解消するためになされたもの
で、ｐ型半導体基板の表層部に形成されたｎ型の不純物
領域と、この不純物領域により形成されるｐｎ接合面の
端部を覆って所定位置に選択的に形成された紫外線に不
透明な遮光層と、この遮光層の下層部に薄く形成された
絶縁層とを（ｌ″ｌｊ１えて構成されたものである。The present invention has been made to solve these problems, and includes an n-type impurity region formed in the surface layer of a p-type semiconductor substrate and an end portion of the pn junction surface formed by this impurity region. The light-shielding layer is selectively formed at a predetermined position and is opaque to ultraviolet rays, and a thin insulating layer is formed below the light-shielding layer.
ｎ型の不純物領域には負極性にｉｉｊ電された不純物原
子であるドナーが形成され、絶縁層か正極性に帯１−シ
されることにより不純物領域の中の電子は引き寄せられ
る。また、この絶縁層は薄く形成されているため、遮光
層下に照射される紫外線量は著しく減少される。Donors, which are impurity atoms charged with negative polarity, are formed in the n-type impurity region, and electrons in the impurity region are attracted by the insulating layer being charged with positive polarity. Furthermore, since this insulating layer is formed thinly, the amount of ultraviolet rays irradiated below the light shielding layer is significantly reduced.
第１図は本発明の一実施例によるホトダイオドアレイの
断面図であり、第２図はこのホトダイオードアレイの各
製造工程における断面図である。FIG. 1 is a cross-sectional view of a photodiode array according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the photodiode array at each manufacturing step.
ｐ型のシリコン基板］１」二にはシリコン酸化物等から
なる酸化物層１２が０．１μｍ以下の膜厚、例えば、０
、 Ｏｌ −０、０８Ｉｔ ｍの膜厚で薄く形成さ
れる。さらに、この酸化物層１２上には多結品のシリコ
ンかＣＶＤ技術により堆積され、遮光層］３か形成され
る（第２図（ａ）参照）。この遮光層１３はタングステ
ン（Ｗ）やプラチナ（ｐＨ等の高融点金属により形成し
ても良い。p-type silicon substrate] 1"2, an oxide layer 12 made of silicon oxide or the like is formed with a film thickness of 0.1 μm or less, for example, 0.1 μm or less.
, Ol -0,08It is formed thinly with a film thickness of m. Furthermore, polycrystalline silicon is deposited on this oxide layer 12 by CVD technology to form a light shielding layer 3 (see FIG. 2(a)). This light shielding layer 13 may be formed of a high melting point metal such as tungsten (W) or platinum (pH).
次に、光感応領域を確保するため、遮光層１３および酸
化物層１２の所定領域かエツチング技術を用いて選択的
に除去される（同図（ｂ）参照）。Next, in order to secure a photosensitive region, predetermined regions of the light shielding layer 13 and the oxide layer 12 are selectively removed using an etching technique (see FIG. 3(b)).
次に、残された遮光層１３および酸化物層１２をマスク
にし、露出した基板１１に不純物として砒素（Ａｓ）か
注入される。この後、イオン注入された不純物を活性化
するために熱処理か行われ、０．１μｍ程度の浅い深さ
のｎ＋型の拡散領域１４が形成される（同図（ｃ）参照
）。Next, using the remaining light shielding layer 13 and oxide layer 12 as a mask, arsenic (As) is implanted as an impurity into the exposed substrate 11. Thereafter, a heat treatment is performed to activate the ion-implanted impurities, and an n+ type diffusion region 14 having a shallow depth of about 0.1 μm is formed (see FIG. 3(c)).
遮光層］３はこの熱処理に十分耐えることの出来る物理
的性質を有し、かつ、紫外線に不透明な、つまり、紫外
線を遮蔽する物理的性質を有する。The light-shielding layer] 3 has physical properties that can sufficiently withstand this heat treatment, and is opaque to ultraviolet rays, that is, has physical properties that block ultraviolet rays.
また、拡散領域１４により形成されるｐｎ接合面］５の
端部１５ａは、この熱処理により、遮光層］３によって
光照射面側から見て覆われる形になり、紫外線から光シ
ールドされる。ここまでの工程により、ｐバ２０半導体
基板１１とｎ＋型の拡散領域］４とのｐｎ接合により、
複数個のホトダイオードか形成される。Further, by this heat treatment, the end portion 15a of the pn junction surface 5 formed by the diffusion region 14 is covered by the light shielding layer 3 when viewed from the light irradiation surface side, and is optically shielded from ultraviolet rays. Through the steps up to this point, a pn junction between the p-bar 20 semiconductor substrate 11 and the n+ type diffusion region]4 is formed.
A plurality of photodiodes are formed.
次に、遮光層］３および基板１］の拡散領域］４上に二
酸化ケイ素（Ｓ １０２ ）やリン・ケイ酸ガラス（Ｐ
Ｓ Ｇ）等かＣＶＤ技術を用いて堆積され、第１図（
ａ）に示される酸化物層１６が形成される。この酸化物
層１６は反射防正膜になると共に電気的絶縁に供される
ものになる。Next, silicon dioxide (S 102 ) and phosphorus silicate glass (P
SG) etc. were deposited using CVD technology, and as shown in Fig. 1(
An oxide layer 16 shown in a) is formed. This oxide layer 16 serves as an anti-reflective film and provides electrical insulation.
引キ続いて、この酸化物層１６上にアルミニウム（ＡΩ
）金属等が蒸着され、フォトエツチング技術を用いて配
線パターンニングが行われて図示しない配線層か形成さ
れる。Subsequently, aluminum (AΩ) is deposited on this oxide layer 16.
) A metal or the like is deposited, and wiring patterning is performed using photoetching technology to form a wiring layer (not shown).
このように以上の各工程を経て第１図に示されるポトダ
イオードアレイは製造される。In this manner, the potdiode array shown in FIG. 1 is manufactured through the above steps.
このような構造において、光感応領域に光が照射される
と、ｐｎ接合面１５に形成される空乏領域にキャリアが
捕らえられ、各ホトダイオードには光出力電流が生じる
。この性質を利用して、ホトダイオードアレイは分析装
置におけるスペクトル検出器等に使用される。In such a structure, when the photosensitive region is irradiated with light, carriers are captured in the depletion region formed at the pn junction surface 15, and a light output current is generated in each photodiode. Taking advantage of this property, photodiode arrays are used in spectrum detectors and the like in analytical equipment.
このように本実施例によれば、ｎ＋型の拡散領域］４に
はドナーか形成され、酸化物層１２１６か正極性に帯電
されることにより拡散領域コ４の中の電子は引き寄せら
れる。このため、ｐｎ接合面１５の端部１５ａに形成さ
れる空乏領域は、第１図（ｂ）に示されるように遮光層
１３下に入り込む方向に引き伸ばされ、端部］、 ５
ａに電界か集中することは無い。さらに、酸化物層］２
は薄く形成されているため、斜めに入射する紫外線はほ
とんと無くなり、遮光層］３下に照射される紫外線量は
著しく減少される。As described above, according to this embodiment, a donor is formed in the n+ type diffusion region 4, and the electrons in the diffusion region 4 are attracted by positively charging the oxide layer 1216. Therefore, the depletion region formed at the end 15a of the pn junction surface 15 is stretched in the direction below the light shielding layer 13 as shown in FIG.
There is no electric field concentrated at a. Further, oxide layer]2
Since it is formed thin, almost no ultraviolet rays are incident obliquely, and the amount of ultraviolet rays irradiated below the light shielding layer 3 is significantly reduced.
このため、紫外線か照射されることによって主にｐｎ接
合面の端部において発生する漏れ電流の増大はぼとんと
阻止され、ホトダイオードアレイの検出感度は著しく向
上し、スペクトル検出等は安定に、かつ、精度良く行わ
れる。しかも、拡散領域］４は砒素によって浅く形成さ
れ、ｐｎ接合面はよい位置にあるため、紫外線帯域の短
波長感度は向」−シ、優れたホトダイオードアレイか提
供される。Therefore, the increase in leakage current that occurs mainly at the end of the pn junction surface due to ultraviolet irradiation is completely blocked, the detection sensitivity of the photodiode array is significantly improved, and spectrum detection etc. is stable. Performed with high precision. Moreover, since the diffusion region 4 is shallowly formed of arsenic and the pn junction is located at a good position, short wavelength sensitivity in the ultraviolet band is low, providing an excellent photodiode array.
また、端部１５ａは遮光層１３により紫外線から保護さ
れているため、端部１５ａに漏れ電流か増大することは
なく、ホトダイオードの寿命は長くなる。Further, since the end portion 15a is protected from ultraviolet rays by the light-shielding layer 13, leakage current at the end portion 15a does not increase, and the life of the photodiode is extended.
第３図は、ホトダイオードアレイにおいて、遮光層下の
酸化物層の厚さを変化させた場合における紫外線照射量
と検出感度の劣化の割合との関係を表すグラフである。FIG. 3 is a graph showing the relationship between the amount of ultraviolet irradiation and the rate of deterioration of detection sensitivity when the thickness of the oxide layer under the light shielding layer is changed in a photodiode array.
この横軸は紫外線の照ｎ・Ｊ量を表し、紫外線の照射時
間を単位とする。縦軸は検出感度の劣化の割合を表し、
その目盛は劣化のない状態時における検出感度を各劣化
状態時における検出感度で割った値を示す。例えば、劣
化のない状態時における検出感度が１００ ［：ｍＡ／
Ｗ］であれば、目盛「１」においては劣化かなくて検１
］Ｊｌ感度が１００ ［ｍ Ａ／Ｗ］であることを表わ
し、［−１盛「］０」においては劣化か進んで検出感度
か１０［ｍＡ／Ｗ］になったことを表わす。The horizontal axis represents the amount of ultraviolet irradiation n·J, with the unit of ultraviolet irradiation time. The vertical axis represents the rate of deterioration in detection sensitivity,
The scale indicates the value obtained by dividing the detection sensitivity in a state with no deterioration by the detection sensitivity in each deterioration state. For example, the detection sensitivity in a state without deterioration is 100 [:mA/
W], there is no deterioration at scale “1” and test 1
]Jl represents that the sensitivity is 100 [mA/W], and [-1 value "]0" represents that the detection sensitivity has deteriorated or progressed to 10 [mA/W].
直線２１は、紫外線の露光に対して未対策な装置におけ
る特性であり、ｐｎ接合面の端部かなんら保護されてい
ない構造のものである。この直線２１から、紫外線照射
量の増加に（トっで検出感度の劣化の割合が著しく大き
くなり、劣化の度合いか進むことか理解される。The straight line 21 is a characteristic of an apparatus that is not protected against exposure to ultraviolet rays, and has a structure in which the end of the pn junction surface is not protected in any way. From this straight line 21, it can be seen that as the amount of ultraviolet irradiation increases, the rate of deterioration in detection sensitivity increases significantly, and the degree of deterioration increases.
これに対して直線２２は遮光層］３下の酸化物層］２の
厚さが１μｍの時の特性であり、直線２３．２４および
２５は酸化物層１２の厚さが０５μｍ、Ｏ，１μｍおよ
び０，０１μｍの時の特性である。各直線２２〜２５か
ら理解されるように、酸化物層］２の厚さか薄くなるほ
ど検出感度の劣化の割合は小さくなり、特に直線２４に
示される０、１μｍ以下の厚さになると遮光層１３の光
シールド＃！能は著しく向上することが分かり、本実施
例の有効さか理解される。On the other hand, the straight line 22 shows the characteristics when the thickness of the oxide layer 2 under the light-shielding layer 3 is 1 μm, and the straight lines 23, 24 and 25 show the characteristics when the thickness of the oxide layer 12 is 05 μm, O,1 μm. and the characteristics at 0.01 μm. As can be understood from the straight lines 22 to 25, as the thickness of the oxide layer [2] becomes thinner, the rate of deterioration of the detection sensitivity decreases, and especially when the thickness of the oxide layer 2 becomes less than 0.1 μm as shown by the straight line 24, the light shielding layer 13 Light shield #! It can be seen that the performance is significantly improved, and the effectiveness of this example can be understood.
以上説明したように本発明によれば、ｎ型の不純物領域
にはドナーか形成され、絶縁層が正極性に帯電されるこ
とにより不純物領域の中の電子は引き寄せられる。As explained above, according to the present invention, a donor is formed in the n-type impurity region, and the insulating layer is positively charged, thereby attracting electrons in the impurity region.
このため、ｐｎ接合而面端部に電界か集中することはな
く、しかも、絶縁層は薄く形成されて遮光層下に照射さ
れる紫外線量は著しく減少するため、紫外線の照射時に
ｐｎ接合面の端部で主に発生ずる漏れ電流の増大はぼと
んと阻止される。この結果、光電変換装置としての検出
感度は向上し、スペクトル検１七等の機能の粘度は高く
なるという効果を何する。Therefore, the electric field is not concentrated at the edge of the pn junction surface, and the insulating layer is formed thin, so the amount of ultraviolet rays irradiated under the light shielding layer is significantly reduced. The increase in leakage current that occurs mainly at the ends is largely prevented. As a result, the detection sensitivity as a photoelectric conversion device is improved, and the viscosity of functions such as spectrum detection 17 is increased.
第１図は本発明の一実施例による装置の断面図、第２図
はこの第１図に示された装置を製造する際の各工程にお
ける断面図、第３図はホトダイオードアレイの遮光層下
の酸化物層を変化させた場合における紫外線照射量と検
出感度の劣化の割合との関係を表すグラフ、第４図は従
来の装置の断面図である。
］］・・半導体基板、１２・・・酸化物層、］３・・遮
光層、１４・・・拡散領域、コ５・・・ｐｎ接合＋Ｔｊ
ｊ 。
１５ ａ・・・ｐｎ接合而面５の端部、１６・酸化物層
。FIG. 1 is a cross-sectional view of a device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of each step in manufacturing the device shown in FIG. 1, and FIG. FIG. 4 is a graph showing the relationship between the amount of ultraviolet irradiation and the rate of deterioration of detection sensitivity when the oxide layer of the device is changed, and FIG. 4 is a cross-sectional view of a conventional device. ] ]...Semiconductor substrate, 12... Oxide layer, ]3... Light shielding layer, 14... Diffusion region, Co5... pn junction +Tj
j. 15 a... End of pn junction surface 5, 16. Oxide layer.
Claims (1)
と、この不純物領域により形成されるｐｎ接合面の端部
を覆って所定位置に選択的に形成された紫外線に不透明
な遮光層と、この遮光層の下層部に薄く形成された絶縁
層とを備えて構成される光電変換装置。An n-type impurity region formed on the surface layer of a p-type semiconductor substrate, and a light shielding layer opaque to ultraviolet rays selectively formed at a predetermined position covering the end of a pn junction surface formed by this impurity region. , and a thin insulating layer formed below the light shielding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1106343A JPH02284479A (en) | 1989-04-26 | 1989-04-26 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1106343A JPH02284479A (en) | 1989-04-26 | 1989-04-26 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02284479A true JPH02284479A (en) | 1990-11-21 |
Family
ID=14431180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1106343A Pending JPH02284479A (en) | 1989-04-26 | 1989-04-26 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02284479A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5329149A (en) * | 1990-10-12 | 1994-07-12 | Seiko Instruments Inc. | Image sensor with non-light-transmissive layer having photosensing windows |
-
1989
- 1989-04-26 JP JP1106343A patent/JPH02284479A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5329149A (en) * | 1990-10-12 | 1994-07-12 | Seiko Instruments Inc. | Image sensor with non-light-transmissive layer having photosensing windows |
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