JPH022833U - - Google Patents
Info
- Publication number
- JPH022833U JPH022833U JP7887988U JP7887988U JPH022833U JP H022833 U JPH022833 U JP H022833U JP 7887988 U JP7887988 U JP 7887988U JP 7887988 U JP7887988 U JP 7887988U JP H022833 U JPH022833 U JP H022833U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating film
- semiconductor layer
- source
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7887988U JPH022833U (US07655688-20100202-C00086.png) | 1988-06-16 | 1988-06-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7887988U JPH022833U (US07655688-20100202-C00086.png) | 1988-06-16 | 1988-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH022833U true JPH022833U (US07655688-20100202-C00086.png) | 1990-01-10 |
Family
ID=31303773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7887988U Pending JPH022833U (US07655688-20100202-C00086.png) | 1988-06-16 | 1988-06-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH022833U (US07655688-20100202-C00086.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005066920A1 (ja) * | 2003-12-26 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | 表示装置 |
JP2011119691A (ja) * | 2009-10-30 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | 電界効果型トランジスタ |
CN107340653A (zh) * | 2016-04-29 | 2017-11-10 | 三星显示有限公司 | 阵列基板和具有该阵列基板的液晶显示装置 |
-
1988
- 1988-06-16 JP JP7887988U patent/JPH022833U/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005066920A1 (ja) * | 2003-12-26 | 2005-07-21 | Matsushita Electric Industrial Co., Ltd. | 表示装置 |
US8188643B2 (en) | 2003-12-26 | 2012-05-29 | Panasonic Corporation | Display apparatus |
JP2011119691A (ja) * | 2009-10-30 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | 電界効果型トランジスタ |
CN107340653A (zh) * | 2016-04-29 | 2017-11-10 | 三星显示有限公司 | 阵列基板和具有该阵列基板的液晶显示装置 |