JPH0227358A - Pattern forming method and contrast enhancement material for pattern forming - Google Patents
Pattern forming method and contrast enhancement material for pattern formingInfo
- Publication number
- JPH0227358A JPH0227358A JP17710488A JP17710488A JPH0227358A JP H0227358 A JPH0227358 A JP H0227358A JP 17710488 A JP17710488 A JP 17710488A JP 17710488 A JP17710488 A JP 17710488A JP H0227358 A JPH0227358 A JP H0227358A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- formula
- pattern forming
- polymer
- contrast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims abstract description 4
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims abstract description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract 3
- -1 salt compound Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- PQUCIEFHOVEZAU-UHFFFAOYSA-N Diammonium sulfite Chemical compound [NH4+].[NH4+].[O-]S([O-])=O PQUCIEFHOVEZAU-UHFFFAOYSA-N 0.000 claims 1
- 239000004793 Polystyrene Substances 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体製造工程のうち、フォトリングラフィ
に用いるパターン形成方法及びパターン形成用コントラ
ストエンハンスト材料に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a pattern forming method and a contrast-enhancing material for pattern formation used in photolithography among semiconductor manufacturing processes.
（従来の技術）
フォトリソグラフィの微細化を行なうＬで、短波長であ
るｊ線（３６５ｎ＋ｉ）ステッパ及びコントラスト・エ
ンハンスト・リソグラフィ（ＣＥＬ）（例えば、 Ｍ、
Ｓａｓａｇｏ ｅｔ ａｌ Ｐｒｏｃ ｏｆ ５ＰＩ
Ｅ、 ６３１，３２１（１９８６））を用いることは非
常に有用である。これらは、いずれも光学系のコントラ
ストを向上させ、レジストパターンの高コントラスト化
を実現する。(Prior art) L is used for miniaturization of photolithography, and J-line (365n+i) stepper with short wavelength and contrast enhanced lithography (CEL) (for example, M,
Sasago et al Proc of 5PI
E, 631, 321 (1986)) is very useful. All of these improve the contrast of the optical system and achieve high contrast of the resist pattern.
ところが、従来、ｉ線光に適したプロセス的に簡易な水
溶性ＣＥＬ材料については満足すべきものが存在しない
（例えば＋ ｔ、、 Ｆ、 Ｈａｌｌｅ、 Ｊ、 Ｖａ
ｃ。However, to date, there has been no satisfactory water-soluble CEL material that is suitable for i-line light and has a simple process (for example, +t, F, Halle, J, Va.
c.
Ｓｃｉ、、 Ｔｅｃｈｎｏｌ、 ８３，３２３ （１９
８５））。このため、微細で形状の良いパターンは得］
）とｕｌう］問題、伝力１あった・
第２図を用いて、従来の水溶性ＣＥＬ材料を用いたパタ
ーン形成方法につｌ、Ｎて説明する。従来のＣＥＬ材料
は、４−アニリノベンゼンジアゾニウムクロライド塩化
亜鉛４．０ｇ、ポリビニルピロ１ノドン６．０ｇ、水１
００ ｇという組成で調整し、コントラストを示すＡ値
（例えば、遠藤他、高分子学会予稿集、３４．２８９３
（１９８５））は３６５ｎｍ番こおり１て５．０であ
った・
基板１上にポジレジスト（Ｍ Ｐ １４００） ２を１
、２μｍ厚形成しく第２図（ａ）Ｌ前記水溶性ＣＥＬ
材料を０．３μｍ厚となるように塗布した（第２図（ｂ
））。その後、マスク５を介してＮＡｏ、４０のｉ線ス
テツノ（により所望のパターンを露光６しく第２図（Ｃ
））、ＭＦ３１９なる現像液で６０秒のノくドル現像を
行な％Ｎ、パターン２Ｂを形成した（第２図（ｄ））。Sci, Technol, 83,323 (19
85)). Therefore, fine and well-shaped patterns are advantageous]
) and ul] Problem, transmission force 1. Using FIG. 2, a pattern forming method using a conventional water-soluble CEL material will be explained in detail. Conventional CEL materials include 4.0 g of 4-anilinobenzenediazonium chloride zinc chloride, 6.0 g of polyvinylpyro-1 nodone, and 1 g of water.
The composition was adjusted to 0.00 g, and the A value indicating contrast (for example, Endo et al., Proceedings of the Society of Polymer Science, 34.2893
(1985)) had a 365 nm thickness of 5.0.Positive resist (MP 1400) 2 to 1 on substrate 1.
, 2 μm thick and FIG. 2(a)L said water-soluble CEL
The material was applied to a thickness of 0.3 μm (Fig. 2(b)
)). Thereafter, a desired pattern is exposed through a mask 5 using NAo and 40 i-ray beams (see FIG. 2(C).
%N, pattern 2B was formed (FIG. 2(d)).
パターン２Ｂは、０．５μ翼のライン・アンド・スペー
スパターンではあったが、膜減りが１０％と大きく、ア
スペクト比も７０″という不良パターンであった。Pattern 2B was a line and space pattern with 0.5 μ blades, but it was a poor pattern with a large film loss of 10% and an aspect ratio of 70″.
このような不良パターンは、後工程での歩留まり低下の
要因となるために、危惧すべき問題である。Such defective patterns are a cause for concern as they cause a decrease in yield in subsequent processes.
（発明が解決しようとする課題）
本発明は、従来のＣＥＬ材料が有していたコントラスト
効果の不良を解決し、形状の良いパターン形成を可能に
することを目的とする。(Problems to be Solved by the Invention) An object of the present invention is to solve the poor contrast effect that conventional CEL materials have and to enable the formation of patterns with good shapes.
（課題を解決するための手段）
本発明は、従来のＣＥＬ材料の課題を解決するために、
コントラストエンハンスト材料として、Ｘｌ、Ｘ２はハ
ロゲン原子）であられされる化合物またはその塩化合物
とポリマーと水より成ることを特徴とする材料を提供し
、これをパターン形成に用いる。(Means for Solving the Problems) In order to solve the problems of conventional CEL materials, the present invention has the following features:
As a contrast-enhancing material, a material is provided which is characterized by comprising a compound or a salt compound thereof (Xl and X2 are halogen atoms), a polymer, and water, and this material is used for pattern formation.
（作 用）
本発明に係るパターン形成用コントラストエンハンスト
材料中の感光成分である一般式Ｘ、、、Ｘ、はハロゲン
原子）であられされる化合物またはその塩化合物は、ｉ
線付近に強い吸収ピークを持ち、また、そのε（分子吸
光係数）も３６５ｎｍにおいて１万以上という大きい値
であることを発見した。このような感光体をｉ線用のＣ
ＥＬ材料として利用すれば、ＣＥＬ材料としてのコント
ラストエンハンスト効果は１０以上になることを見い出
した。(Function) The photosensitive component in the contrast-enhancing material for pattern formation according to the present invention, a compound represented by the general formula X, .
It was discovered that it has a strong absorption peak near the line, and its ε (molecular extinction coefficient) is also a large value of 10,000 or more at 365 nm. Such a photoreceptor is used for i-line C
It has been found that when used as an EL material, the contrast enhancement effect as a CEL material becomes 10 or more.
Ａ値が１０以上となるような本発明のＣＥＬ材料をパタ
ーン形成に応用することにより、高コントラストの微細
パターンが得られることがわかった。It has been found that by applying the CEL material of the present invention having an A value of 10 or more to pattern formation, a fine pattern with high contrast can be obtained.
なお、ＣＥＬ材料中のポリマーとしては、ポリスチレン
スルフォン酸、ポリスチレンスルフォン酸アンモニウム
、ポリビニルピロリドンなどのｉ線付近に透明性の高い
、しかも水に易溶なものが選ばれる。もちろん、本発明
はこれらに限定されることはない。As the polymer in the CEL material, one selected is one that has high transparency near the i-line and is easily soluble in water, such as polystyrene sulfonic acid, ammonium polystyrene sulfonate, and polyvinylpyrrolidone. Of course, the present invention is not limited to these.
（実施例） 第１図を用いて、本発明の一実施例を説明する。(Example) An embodiment of the present invention will be described with reference to FIG.
半導体等の基板１上にポジレジスト（Ｍ Ｐ １４００
）２を１．２μｌ厚に形成した（第１図（ａ））。次に
１本発明の一実施例のパターン形成用コントラストエン
ハンスト材料を０．３μｍ厚形成した。なお、本発明の
ＣＥＬ材料の組成は、２−メトキシ−５−クロロジアゾ
ベンゼンクロライド塩化亜鉛４．０ｇ。A positive resist (MP 1400) is applied on a substrate 1 such as a semiconductor.
) 2 was formed to a thickness of 1.2 μl (FIG. 1(a)). Next, a contrast-enhancing material for pattern formation according to an embodiment of the present invention was formed to a thickness of 0.3 μm. The composition of the CEL material of the present invention is 4.0 g of 2-methoxy-5-chlorodiazobenzene chloride zinc chloride.
ポリスチレンスルフォン酸（分子量１万）６−７ｇ＋水
ｔｏｏ ｇであり、３６５ｎｍにおけるＡ値は１１．５
であった（第１図（ｂ））、Ｌかる後に、マスク５を介
してＮＡｏ、４０のｉｇステッパにより所望のパターン
を露光６しく第１図（Ｃ））、ＭＦ３１９なる現像液で
６０秒のパドル現像を行ない、パターン２Ａを形成した
（第１図（ｄ））。Polystyrene sulfonic acid (molecular weight 10,000) 6-7 g + water too g, A value at 365 nm is 11.5
(Fig. 1(b)), and then exposed the desired pattern through a mask 5 with an NAo and 40 ig stepper (Fig. 1(c)) for 60 seconds with a developer called MF319. Paddle development was performed to form pattern 2A (FIG. 1(d)).
得られたパターン２Ａは、０．５μｍのライン・アンド
・スペースパターンであり、膜減りは１％程度であり、
形状はアスペクト比で８８″′という良好さであった。The obtained pattern 2A is a 0.5 μm line and space pattern, and the film loss is about 1%.
The shape was good with an aspect ratio of 88''.
なお、本実施例に用いる本発明のパターン形成用コント
ラストエンハンスト材料の代わりに以下のごとき組成の
材料を用いた場合にも、同様の良好な結果が得られた。Note that similar good results were obtained when a material having the following composition was used instead of the contrast-enhancing material for pattern formation of the present invention used in this example.
もちろん、本発明はこれらに限定されることはない。Of course, the present invention is not limited to these.
（発明の効果）
本発明のコントラストエンハンスト材料は、１線光に対
して大きなコントラストエンハンスト効果を持ち、これ
をｉ線露光に用いることにより形状の良い微細パターン
が得られ、半導体素子製造の歩留まり向上につながり、
工業的価値が大きい。(Effects of the Invention) The contrast-enhancing material of the present invention has a large contrast-enhancing effect for one-line light, and by using it for i-line exposure, fine patterns with good shapes can be obtained, improving the yield of semiconductor device manufacturing. connected to,
It has great industrial value.
第１図（ａ）〜（ｄ）は本発明の一実施例のコントラス
トエンハンスト材料（ＣＥＬ材料）を用いたパターン形
成方法の工程断面図、第２図（ａ）〜（ｄ）は従来のコ
ントラストエンハンスト材料を用いたパターン形成方法
の工程断面図である。
１・・・基板、 ２・・・ポジレジスト（Ｍ Ｐ １
４００）、３・・・本発明のＣＥＬ材料、 ５・・・マ
スク、６・・・ｊ線、 ２Ａ・・・パターン。
第
を
図
２ボ一ジレジスト＋ＭＰ＋４００１FIGS. 1(a) to (d) are process cross-sectional views of a pattern forming method using a contrast-enhancing material (CEL material) according to an embodiment of the present invention, and FIGS. 2(a) to (d) are process sectional views of a conventional contrast FIG. 3 is a process cross-sectional view of a pattern forming method using an enhanced material. 1...Substrate, 2...Positive resist (M P 1
400), 3... CEL material of the present invention, 5... Mask, 6... J line, 2A... Pattern. Figure 2 Bodhi resist + MP + 4001
Claims (3)
基またはフェニル基、Ｘ＿１、Ｘ＿２はハロゲン原子）
であらわされる化合物またはその塩化合物とポリマーと
水より成るパターン形成用コントラストエンハンスト材
料を塗布し、露光・現像を行なってパターンを形成する
パターン形成方法。(1) Apply a resist on the substrate and write the general formula▲mathematical formula, chemical formula, table, etc.▼(R_1 is an alkyl group or phenyl group, X_1 and X_2 are halogen atoms)
A pattern forming method in which a pattern-forming contrast-enhancing material consisting of a compound represented by the formula or its salt compound, a polymer, and water is applied, and a pattern is formed by exposure and development.
１はアルキル基またはフェニル基、Ｘ＿１、Ｘ＿２はハ
ロゲン原子）であらわされる化合物またはその塩化合物
とポリマーと水より成るパターン形成用コントラストエ
ンハンスト材料。(2) General formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (R_
1 is an alkyl group or a phenyl group, X_1 and X_2 are halogen atoms) or a salt thereof, a polymer, and water.
リスチレンスルフォン酸アンモニウムまたはポリビニル
ピロリドンである請求項（２）記載のパターン形成材料
。(3) The pattern forming material according to claim (2), wherein the polymer is polystyrene sulfonic acid, polystyrene ammonium sulfonate, or polyvinylpyrrolidone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17710488A JPH0227358A (en) | 1988-07-18 | 1988-07-18 | Pattern forming method and contrast enhancement material for pattern forming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17710488A JPH0227358A (en) | 1988-07-18 | 1988-07-18 | Pattern forming method and contrast enhancement material for pattern forming |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0227358A true JPH0227358A (en) | 1990-01-30 |
Family
ID=16025218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17710488A Pending JPH0227358A (en) | 1988-07-18 | 1988-07-18 | Pattern forming method and contrast enhancement material for pattern forming |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0227358A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0461591U (en) * | 1990-10-05 | 1992-05-27 | ||
| US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
-
1988
- 1988-07-18 JP JP17710488A patent/JPH0227358A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0461591U (en) * | 1990-10-05 | 1992-05-27 | ||
| US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
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