JPH02267137A - Sealing material - Google Patents
Sealing materialInfo
- Publication number
- JPH02267137A JPH02267137A JP8577089A JP8577089A JPH02267137A JP H02267137 A JPH02267137 A JP H02267137A JP 8577089 A JP8577089 A JP 8577089A JP 8577089 A JP8577089 A JP 8577089A JP H02267137 A JPH02267137 A JP H02267137A
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- low
- sealing material
- sealing
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003566 sealing material Substances 0.000 title claims abstract description 48
- 239000011521 glass Substances 0.000 claims abstract description 35
- 239000000843 powder Substances 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 14
- 230000008018 melting Effects 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 4
- 229910000174 eucryptite Inorganic materials 0.000 claims description 4
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052644 β-spodumene Inorganic materials 0.000 claims description 3
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000704 physical effect Effects 0.000 abstract 1
- 239000006121 base glass Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 21
- 238000007789 sealing Methods 0.000 description 20
- 239000000945 filler Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低温での気密封着が可能な封着材料、特に、
低熱１］、Ｉ 、Ｊセラミックスを用いたＬＳＩパッケ
ージの封着に適した低温低熱膨張封着材料に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a sealing material capable of airtight sealing at low temperatures, particularly,
Low heat 1], I, JRelates to a low-temperature, low-thermal-expansion sealing material suitable for sealing LSI packages using ceramics.
従来から、パッケージを用いてＳｉ半導体などを封着す
るには、８１半導体への熱伝導を極力抑える必要がある
から、可能な限り低温で封着することが望ましく、また
、パッケージの気密性を維持するた給には、流動性に富
むと同時に、半導体と同程度の低熱膨張特性をもつ封着
材料が要求されている。Conventionally, when sealing a Si semiconductor or the like using a package, it is necessary to suppress heat conduction to the 81 semiconductor as much as possible, so it is desirable to seal at the lowest possible temperature. To maintain this, a sealing material that is highly fluid and has low thermal expansion characteristics comparable to that of semiconductors is required.
今までに、セラミック質ＬＳＩパッケージの封着には、
特開昭５９−１６４６４９号、特開昭６０２７６２０号
各公報等で水容れるように、ＰｈＯ８２０、を主成分と
したガラスをベースガラスとして、低熱膨張材料（フィ
ラー）を組合わせた封着材料が開発されていた。Until now, the sealing of ceramic LSI packages has been
In JP-A-59-164649 and JP-A-6027620, a sealing material was developed in which a glass containing PhO820 as the main component was used as a base glass and a low thermal expansion material (filler) was combined to contain water. It had been.
しかしながら、これらの封着材料はベースガラスがＰｂ
Ｏを主成分とするガラスから成っているため、封着温度
の低温化は可能であるが、ベースガラス自体が高熱膨張
特性を有しているため、フィラーを混入させても低熱膨
張化は限界がある。したがって、これらの封着材料を用
いたセラミック質パッケージとしては、主として、アル
ミナパッケージに用いられているだけである。However, the base glass of these sealing materials is Pb.
Since it is made of glass whose main component is O, it is possible to lower the sealing temperature, but since the base glass itself has high thermal expansion characteristics, there is a limit to lowering the thermal expansion even if fillers are mixed in. There is. Therefore, as ceramic packages using these sealing materials, only alumina packages are mainly used.
そこで、更にＬＳＩパッケージの信頼性を向上させるに
は、Ｓｉ半導体に生ずる熱応力を低減させるために、Ｓ
ｉ半導体の熱膨張特性と同程度のセラミックスを用いた
パッケージを封着することが必要となる。それには、ベ
ースガラス自体の低熱膨張化が望まれるようになる。そ
こで、本発明者らは、これらのベースガラスを種々検討
した結果、特開昭６１−７８１２８号公報に示されてい
るＶ２Ｏ５を主成分とする低温軟化ガラスを見出した。Therefore, in order to further improve the reliability of the LSI package, in order to reduce the thermal stress that occurs in the Si semiconductor,
It is necessary to seal a package using ceramics that has the same thermal expansion characteristics as the i-semiconductor. To this end, it has become desirable to lower the thermal expansion of the base glass itself. As a result of various studies on these base glasses, the inventors of the present invention discovered a low-temperature softening glass containing V2O5 as a main component, which is disclosed in JP-A-61-78128.
従来の［］ｈロー］（２ｏ３を主成分としたガラスをベ
スとした封着材料は、ベースガラス自体が高熱膨張特性
をもった狛、アルミナより低い熱膨張係数を有するセラ
ミックパッケージ、例えば、ムライト１．５ＩＣ１八ｌ
Ｎなどを基板としたパツウーージ等の封着に適用するの
が困難であった。Conventional sealing materials based on glass containing 2o3 as the main component include ceramic packages whose base glass itself has a high thermal expansion coefficient, ceramic packages whose coefficient of thermal expansion is lower than that of alumina, and mullite, for example. 1.5 IC18l
It has been difficult to apply this method to sealing adhesives and the like using N or the like as a substrate.
従来の封着材料は、セラミックパッケージなどの適用範
囲が制限され、例えば、」二記のアルミナ質のパッケー
ジの場合、８１半導体との熱膨張差によって８１半導体
に割れなどが発生する。また、ベースガラスがＰｂＯ−
［］２０３を主成分としているたｙつガラス強度が小さ
く、僅かな衝撃力などによりクラックなどが容易に発生
し気密性が保てなくなる。Conventional sealing materials are limited in their applicability to ceramic packages, etc. For example, in the case of an alumina package as described in Section 2, cracks occur in the 81 semiconductor due to the difference in thermal expansion between the 81 semiconductor and the 81 semiconductor. In addition, the base glass is PbO−
[ ] 203 as a main component has low strength, and cracks easily occur due to slight impact force, making it impossible to maintain airtightness.
また化学的耐久性も十分でな（耐湿性など蔀環境試験に
おいて、満足のゆく結果が得られない。更には、従来の
Ｐｂｉ〕−８２０３系ベースガラスはフィシとの反応性
に富んでいるた必、パッケージ封着時に封着材料の粘度
が高くなり、流動性が低下するなどベースガラスの特長
が生かせず、低温封着が困難になってくる。In addition, the chemical durability is not sufficient (satisfactory results cannot be obtained in moisture resistance and other environmental tests. Furthermore, the conventional Pbi]-8203 base glass is highly reactive with fissile. Inevitably, when sealing the package, the viscosity of the sealing material increases, reducing fluidity and making it impossible to take advantage of the features of the base glass, making low-temperature sealing difficult.
したがって、これら従来の封着材料では、ＬＳＩ用パッ
ケージの信頼性を向」ニさせるのは困難となる。Therefore, it is difficult to improve the reliability of LSI packages using these conventional sealing materials.
そこで、本発明の目的は、ＬＳＩパッケージの信頼性を
高めるため、Ｓｉ半導体の熱膨張特性と同程度の熱膨張
特性を有する低熱膨張セラミックス基板を用いたパッケ
ージに最適な封着材料を提供することにある。Therefore, an object of the present invention is to provide an optimal sealing material for packages using low thermal expansion ceramic substrates having thermal expansion characteristics comparable to those of Si semiconductors, in order to improve the reliability of LSI packages. It is in.
」１記目的を達成するために、本発明では、Ｖ２Ｏ，。 ” In order to achieve the object described in item 1, the present invention uses V2O.
を主成分とした低融点ガラス粉末と低熱膨張材粉末との
混合物からなる封着材料としたものであり、上記低融点
ガラス粉末としては、Ｖ２Ｏ，を主成分とし、Ｐ２Ｏ５
及びＳｂ２Ｏ３を含有している非晶質ガラスからなり、
また、変形温度（１ＯＮポーズの粘度）が４００℃以下
、熱膨張係数が９０Ｘ １０−７／ ℃以下であるもの
を用いたものであり、一方、前記低膨張材粉末としては
、β−ユークリプタイト、β−スポジューメン、コージ
ェライト、石英ガラス、チタン酸鉛、ｔ’１ｌｌｒ２（
ｒ’ｏａ）３、ＣａＺｒ２（ＰＯ＋）ｑ 、ＫＺｒ２（
ＰＤ、）３のうちから選ばれた一種以上からなるものを
用いたものである。The sealing material is made of a mixture of a low melting point glass powder and a low thermal expansion material powder, the main components of which are V2O and P2O5.
and amorphous glass containing Sb2O3,
In addition, a material having a deformation temperature (viscosity at 1ON pose) of 400°C or less and a thermal expansion coefficient of 90X10-7/°C or less is used. On the other hand, the low expansion material powder is β-eucrypt. tight, β-spodumene, cordierite, quartz glass, lead titanate, t'1llr2 (
r'oa)3, CaZr2(PO+)q, KZr2(
It uses one or more selected from PD, )3.
そして、本発明では、前記したような封着材料を用いて
封止したセラミックパッケージとしたものでもある。The present invention also provides a ceramic package sealed using the sealing material as described above.
以下に本発明を詳述すれば、本発明では前記したように
、Ｖ２Ｏ，、を主成分としてＰ２Ｏ，及びＳｂ２Ｏ３を
含有する非晶質ガラスからなり、変形温度（１０ボイズ
の粘度）が４００℃で熱膨張係数が９０Ｘ １０−７／
℃以下である低融点ガラス粉末に、粒径が５０μｍ以下
で熱膨張係数が２０×１０″′／℃以下であり、前記し
たβ−ユークリプタイト等から選ばれた低熱膨張材粉末
を、全量に対して体積％表示で５０％以下含有させて混
合したことにより、封着温度が５００℃以下・で熱膨張
係数が４５ｘ １０−７／ ℃以下である封着材料を得
たものである。Describing the present invention in detail below, as described above, the present invention is made of an amorphous glass containing V2O, as a main component, P2O, and Sb2O3, and has a deformation temperature (viscosity of 10 voids) of 400°C. The coefficient of thermal expansion is 90X 10-7/
The entire amount of low thermal expansion material powder selected from the aforementioned β-eucryptite etc., which has a particle size of 50 μm or less and a thermal expansion coefficient of 20 x 10''/°C or less, is added to a low melting point glass powder having a temperature of 50 μm or less A sealing material having a sealing temperature of 500° C. or less and a thermal expansion coefficient of 45×10 −7 /° C. or less was obtained by mixing 50% or less in volume %.
そして、本発明における封着材料は、セラミックパッケ
ージ特にＬＳＩパッケージの封着用として有効であり、
また、このような封着のためのＬＳＩパッケージのパラ
ゲージ基板としては、電気絶縁性Ｓｉ［： 、Ｓｉ、ム
ライトまたはへ１Ｎ等を用いる。The sealing material of the present invention is effective for sealing ceramic packages, especially LSI packages,
Further, as a parasitic substrate of an LSI package for such sealing, electrically insulating Si[:], Si, mullite, 1N, or the like is used.
次に、本発明を更に詳しく説明する。Next, the present invention will be explained in more detail.
先ず、封着材料のベースガラスは、低温封着、低熱膨張
特性なとを考慮して種々検討した結果、ｖ２０．を主成
分よしてＰ２Ｏ５及び５ｈ２０３を含有している非晶質
ガラスが適することを見い出した。First, as a result of various studies on the base glass of the sealing material, taking into account low-temperature sealing and low thermal expansion characteristics, v20. It has been found that an amorphous glass containing P2O5 and 5h203 as main components is suitable.
次に、低熱膨張化に必要な低熱膨張＋１（以下「フィラ
ー」という」の種類、粒度、重量比などを検討した。そ
の結果、封着材料に要求される熱膨張係数４５Ｘ１０’
／を以下を満足させるにはフィラーの熱膨張係数は２０
Ｘ １０−７／ ｔ：以下が望ましく、また、封着材料
に内約るフィラーの体積比は５０体積％以下であること
が必要になる。さらに、封着材料の低熱膨張特性を維持
させるためにフィラーの粒度は５０μｍ以下が適するこ
とを確認した。Next, we investigated the type, particle size, weight ratio, etc. of low thermal expansion +1 (hereinafter referred to as "filler") necessary for low thermal expansion.As a result, we found that the thermal expansion coefficient required for the sealing material was 45 x 10'
/ To satisfy the following, the coefficient of thermal expansion of the filler is 20
X 10-7/t: The following is desirable, and the volume ratio of the filler included in the sealing material needs to be 50% by volume or less. Furthermore, it was confirmed that the particle size of the filler is preferably 50 μm or less in order to maintain the low thermal expansion characteristics of the sealing material.
また、上記特性を有し、さらにベースガラスとの反応の
抑制が可能なフィラー材を検討した結果、Ｐ２Ｏ５を主
成分としたベースガラスに用いられる最適なフィラー材
としては、従来のＰｂＯ−８２０３系ガラスをベースガ
ラスとした封着材料にも適用されているβ−ユークリプ
タイト、β−スポジューメン、コージェライト、石英ガ
ラス、チタン酸鉛、ＮａＺｒ２（ＰＯ，）３、［”、ａ
Ｚｒ２（ＰＯ４）３、ＫＺｒ２（ＰＯ−）３のうちから
選ばれた少なくとも一種以」二を用いることが必要とな
る。In addition, as a result of examining filler materials that have the above characteristics and are capable of suppressing reactions with the base glass, we found that the conventional PbO-8203-based filler material is the most suitable filler material for use in base glasses containing P2O5 as the main component. β-eucryptite, β-spodumene, cordierite, quartz glass, lead titanate, NaZr2(PO,)3, ['', a
It is necessary to use at least one selected from Zr2(PO4)3 and KZr2(PO-)3.
前記のＶ２Ｏ５を主成分とした低融点ガラスは、特開昭
６２−１８１２８号公報に記載された耐水性低温軟化ガ
ラス組成物が使用でき、その成分は、主要成分とし−ｃ
Ｖ２ｔ１．、を５５〜７０重量％含有し、Ｐ２Ｏ５を
１７〜３０重量％及び５ｂＪ３を２〜２０重量％で含有
している。更に該ガラス組成物は、成分としてＰｂＯを
２０重量％以下、Ｔ Ｉ ２０を１５重量％以下及び／
又はＮａ２Ｏ３を５重量％以下含有することができる。As the low melting point glass containing V2O5 as the main component, the water-resistant low temperature softening glass composition described in JP-A-62-18128 can be used, the main components being -c
V2t1. , 55 to 70% by weight, P2O5 in 17 to 30% by weight, and 5bJ3 in 2 to 20% by weight. Furthermore, the glass composition contains as components PbO at 20% by weight or less, T I 20 at 15% by weight or less, and/or
Alternatively, it may contain 5% by weight or less of Na2O3.
以上、フィラーを混合したＰ２Ｏ５を主成分とした低融
点ガラスを封着材料とすることによって、低熱膨張特性
を有し且つ低温封着が可能となり気密封着など信頼性の
高いＬＳＩパッケージなどが得られる。As described above, by using low-melting glass mainly composed of P2O5 mixed with a filler as a sealing material, it has low thermal expansion characteristics and can be sealed at low temperatures, resulting in highly reliable LSI packages such as airtight sealing. It will be done.
Ｌ Ｓ Ｉパッケージに装備されているＳｉ半導体の熱
膨張係数は、凡そ３５Ｘ１．０−７／ｌ：を有している
た約、それを搭載するセラミック基板及び封着材料の熱
膨張係数は、接着及び封着時などに生ずる半導体の割れ
及び封着ｔ、（）ｔ１４のクラックなどから生ずるパッ
ケージのリークなどを防止するため、半導体と同程度の
熱膨張係数を有する必要がある。また、８１半導体特性
の信頼性を劣化させないためにもパッケージの」−４着
温度は極力低温が望ましい。The thermal expansion coefficient of the Si semiconductor equipped in the LSI package is approximately 35X1.0-7/l, and the thermal expansion coefficient of the ceramic substrate and sealing material on which it is mounted is: In order to prevent cracks in the semiconductor that occur during adhesion and sealing, and leaks in the package that occur due to cracks in the sealing t and () t14, it is necessary to have a coefficient of thermal expansion comparable to that of the semiconductor. Furthermore, in order to avoid deteriorating the reliability of the 81 semiconductor characteristics, it is desirable that the -4 temperature of the package be as low as possible.
そこで、まず、封着材料の熱膨張係数４５Ｘ １０−７
／℃以下としたのは、ＬＳＩパッケージに搭載されてい
るＳｉ半導体、及び低熱膨張セラミックスの熱膨張係数
に近似させ、極力半導体に発生する熱応力を低減させる
ためである。したがって、封着材料の熱膨張係数４５Ｘ
１０−７／を以下を維持するには、封着材料のベースガ
ラスの熱膨張係数を９０×１０−７／℃以下、低熱膨張
材（フィラー）の熱膨張係数を２０Ｘ １０−７／ を
以下にする必要がある。Therefore, first, the thermal expansion coefficient of the sealing material is 45X 10-7
The reason why the temperature is set to below /°C is to approximate the thermal expansion coefficient of the Si semiconductor and low thermal expansion ceramics mounted on the LSI package, and to reduce the thermal stress generated in the semiconductor as much as possible. Therefore, the thermal expansion coefficient of the sealing material is 45X
To maintain 10-7/ or less, the thermal expansion coefficient of the base glass of the sealing material should be 90 x 10-7/°C or less, and the thermal expansion coefficient of the low thermal expansion material (filler) should be 20 x 10-7/ or less. It is necessary to
そして、て−スガラスとしては、前記したまうに特開昭
６１７８１２８号公報に示されている低熱膨張特性に優
れたｖ２０．を主成分としてＰ２Ｏ５及びＳｂ２Ｏ３を
含有した非晶質ガラスを選定した。このガラスを選んだ
理由として低熱膨張特性を示すと同時に、従来のＰ ｂ
Ｏ−Ｂ ２ ［１３系非晶質ガラス同様に低温作業が
可能となり、更には高強度、高耐水性など種々の特性に
優れ、また、パッケージの気密封着に必要なガラスの流
動性に富んでいるためである。As for the table glass, v20, which has excellent low thermal expansion characteristics as disclosed in the above-mentioned Japanese Patent Application Laid-open No. 6178128, is used. An amorphous glass containing P2O5 and Sb2O3 as main components was selected. The reason for choosing this glass is that it exhibits low thermal expansion characteristics and at the same time
O-B 2 [Like 13-series amorphous glass, it can be used at low temperatures, and it also has excellent properties such as high strength and high water resistance, as well as the fluidity of glass necessary for hermetic sealing of packages. It's to stay.
次に、フィラー材の封着′ｖＪ料に占める体積％を５０
体積％以下としたのは、フィラー材が５０体積％を越え
るとベースガラスの流動性の効果が失くなり、パッケー
ジの封着性が悪くなるためである。Next, the volume percent of the filler material in the sealing 'vJ material was 50%.
The reason why the amount is set to be less than 50% by volume is that if the filler material exceeds 50% by volume, the fluidity effect of the base glass will be lost and the sealing properties of the package will deteriorate.
また、フィラー材の粒度を５０μｍ以下としたのは、５
０μｍ以上になるとベースガラスとの熱膨張差により、
ベースガラスとフィラー界面にクラックが発生し、パッ
ケージの気密封着が困難になるからである。In addition, the particle size of the filler material was set to 50 μm or less.
If it exceeds 0 μm, due to the difference in thermal expansion with the base glass,
This is because cracks occur at the interface between the base glass and the filler, making it difficult to hermetically seal the package.
また、フィラー材の種類をβ−ユークリプタイト、β−
スポジュ、−メン、コージェライト、石英ガラス、チタ
ン酸鉛、ＮａＺｒ２（ＰＯ４） ３、ＣａＺｒ２（ＰＯ
４） ３、ＫＺｒ２（ＰＯ，）３のうちの少なくとも一
種類を含むものとしたのは、これらのフィラー材の熱膨
張係数が、上記のように２０Ｘ １０−７／ｌ：以下の
値を有することと、ベースガラスであるＶ２Ｏ５系ガラ
スとの反応を抑制して接着力を向上させるためである。In addition, the types of filler materials are β-eucryptite, β-
Spodium, -men, cordierite, quartz glass, lead titanate, NaZr2 (PO4) 3, CaZr2 (PO
4) At least one of 3.KZr2(PO,)3 is included because the coefficient of thermal expansion of these filler materials is 20X 10-7/l as described above. This is also to suppress the reaction with the base glass, V2O5 glass, and to improve the adhesive strength.
封着材料の封着温度を５００℃以下、ベースガラスの変
形点を４００℃としたのは、ＬＳＩパッケージのＳｉ半
導体の耐熱性を考慮したからである。The reason why the sealing temperature of the sealing material was set to 500° C. or less and the deformation point of the base glass was set to 400° C. was because the heat resistance of the Si semiconductor of the LSI package was taken into consideration.
以下、本発明を実施例により具体的に説明するが、本発
明はこれらの実施例に限定されない。EXAMPLES Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples.
実施例１ 本発明の封着材料の製造法を述べる。Example 1 A method for manufacturing the sealing material of the present invention will be described.
まず、Ｖ２Ｏ５を主成分とするベースガラス作製に必要
な各種酸化物原料を所定の組成に配合、秤量した後、混
合したアルミするつぼに入れて電気炉で１０００〜１１
００℃で１〜２時間加熱溶融する。溶融したガラスを板
状成形鋳型に流し込んだ後、アルミナ乳鉢で粒径５０μ
ｍ以下に粉砕する。その後、ボールミルで粒径１０μｍ
以下迄粉砕してベースガラス粉末を製造する。次に、こ
の粉末と低熱膨張材である粒径５０μｍ以下の各々のフ
ィラー材を所定の配合量を秤量した後、ミキサーで混合
して本発明の封着材料を得た。First, various oxide raw materials necessary for producing a base glass containing V2O5 as the main component are mixed into a predetermined composition and weighed, and then placed in an aluminum crucible and heated in an electric furnace to a temperature of 1,000 to 11
Heat and melt at 00°C for 1 to 2 hours. After pouring the molten glass into a plate-shaped mold, the particle size is reduced to 50μ in an alumina mortar.
Grind to less than m. Then, use a ball mill to obtain particles with a particle size of 10 μm.
A base glass powder is produced by pulverizing to the following degree. Next, predetermined amounts of this powder and each filler material having a particle size of 50 μm or less, which is a low thermal expansion material, were weighed and mixed in a mixer to obtain a sealing material of the present invention.
上記で得た封着材料のベースガラス組成及び特性温度と
熱膨張係数を第１表に示す。第１表において、試ＩｔＮ
ｏ、Ａ−１〜７０本発明の実施例に用いたＶ２Ｏ５−Ｐ
２Ｏ５５ｂＪ３系ヘースガラスハ、特性温度である変形
点は４００℃以下の低融点ガラスであり、且つ、熱膨張
係数は９０Ｘ １０−７／ ｔ：以下であり、試料Ｎｏ
、Ｂ−１、Ｂ−２のＰｂＯ−８２０３系ガラスに比べて
低熱膨張特性を示すことがわかる。ここで、熱膨張係数
は５０℃〜ガラス転移点までの範囲とした。Table 1 shows the base glass composition, characteristic temperature, and coefficient of thermal expansion of the sealing material obtained above. In Table 1, the test ItN
o, A-1 to 70 V2O5-P used in the examples of the present invention
The 2O55bJ3 series Heas glass is a low melting point glass with a characteristic temperature deformation point of 400°C or less, and a thermal expansion coefficient of 90X 10-7/t: or less, and sample No.
, B-1, and B-2, which exhibit lower thermal expansion characteristics than the PbO-8203 glasses. Here, the thermal expansion coefficient was in the range from 50°C to the glass transition point.
第１表ニ示したＶ２［］５ Ｐ２Ｏ５Ｓｂ２Ｏ３を主成
分トシたベースガラスに低熱膨張材のフィラーを混合し
た本発明である封着材料の組成及び緒特性を第２表に示
した。この第２表は第１表に示したＶ２Ｏ５ｐ２Ｑ５−
３ｂ２０．を主成分としたＡ−２、Ａ−３、Ａ５のベー
スガラスを用いて、表に示す体積％の割合で低膨張材を
混合したものである。ここで、熱膨張係数は直径５ｍｍ
の棒状に加熱成形したものを５０℃〜ガラス転移点間を
測定したものである。また、流動性は直径１ （１ｍｍ
、厚さ５ｍｍに加圧成形した後、表に示した封着温度で
１０分間加熱した時の成形体（フローボタン）の直径を
測定したものである。曲げ強度は幅４ ｍｍ、厚さ５ｍ
ｍ、長さ４０ｍｍの角棒に加熱成形し、４点曲げ試験に
よって得られた測定値を示したものである。なお、試料
Ｎｏ、 Ｃ１〜８は本発明の実施例、Ｄ−１、Ｉ）−２
は従来のＰｂ０ ８２０３を主成分としたベースガラス
を用いた比較例を示したものである。Table 2 shows the composition and properties of the sealing material of the present invention, which is a base glass mainly composed of V2[]5P2O5Sb2O3 shown in Table 1 and mixed with a filler of a low thermal expansion material. This Table 2 shows the V2O5p2Q5− shown in Table 1.
3b20. The base glasses A-2, A-3, and A5, which mainly contain A-2, A-3, and A5, are mixed with a low-expansion material in the volume percentage shown in the table. Here, the coefficient of thermal expansion is 5 mm in diameter.
This is a result of measurement of the temperature between 50° C. and the glass transition point of the product heated and molded into a rod shape. In addition, the fluidity is 1 mm in diameter
The diameter of the molded body (flow button) was measured after pressure molding to a thickness of 5 mm and heating for 10 minutes at the sealing temperature shown in the table. Bending strength is 4 mm in width and 5 m in thickness.
This figure shows the measured values obtained by heating and forming a square bar with a length of 40 mm and a four-point bending test. In addition, sample No. C1 to C8 are examples of the present invention, D-1, I)-2
shows a comparative example using a conventional base glass containing Pb0 8203 as a main component.
第２表に示されているように本発明の封着材料の封着温
度は５００℃以下と低温作業が可能であると同時に熱膨
張係数は４５ｘ １０−７／ ’ｃ以下と、従来の封着
材料る比べて小さくなることが確δ忍されるゎさらに、
流動性においても、従来に比較し、同等あるいは優れて
いることがわかる。さらに、曲げ強度は従来に比較し１
．６〜２．０倍向上している。As shown in Table 2, the sealing temperature of the sealing material of the present invention is 500°C or less, which enables low-temperature work, and at the same time, the thermal expansion coefficient is 45x 10-7/'c or less, which is lower than conventional sealing materials. I'm sure it will be smaller compared to the material I'm wearing.Furthermore,
It can be seen that the fluidity is also the same or better than the conventional one. Furthermore, the bending strength is 1
．． This is an improvement of 6 to 2.0 times.
したがッテ、本発明ノｖ２ｏｓ−ｐ２ｏｓ−ｓｂ２ｏ３
を主成分とするガラスをベースガラスとした封着材料を
ノでッケージの封着に用いることによって、ツク・ソケ
ージに搭載されているＳｉ半導体の熱膨張係数（こ近イ
以させることが可能となるため半導体に生じる熱応力は
低減でき、また、封着材料の高強度化（こよってクラッ
クも防止することが可能となる。However, the present invention v2os-p2os-sb2o3
By using a sealing material whose base glass is a base glass of Therefore, the thermal stress generated in the semiconductor can be reduced, and the strength of the sealing material can be increased (thereby, cracks can be prevented).
実施例２
第１図に本発明の封着材料を適用したＬＳＩパッケージ
の断面図を示す。第１図において、１は放熱フィン、２
はシリコーンゴム、３はリートフレート、４はパッケー
ジキャップ、５はＬＳＩ（Ｓｉ半導体）、６は接着材、
７は封着材料、８はパッケージ基板であり、ＬＳＩ５は
パッケージ基板８とパッケージキャップ４によって、封
着材料７で封止されでいる。Example 2 FIG. 1 shows a sectional view of an LSI package to which the sealing material of the present invention is applied. In Fig. 1, 1 is a radiation fin, 2
is silicone rubber, 3 is a reef plate, 4 is a package cap, 5 is an LSI (Si semiconductor), 6 is an adhesive,
7 is a sealing material, 8 is a package substrate, and the LSI 5 is sealed by the package substrate 8 and the package cap 4 with the sealing material 7.
また、第３表には、第２表の封着材料と低熱膨張セラミ
ックス基板を適用したＬＳＩパッケージの寿命試験であ
る熱サイクル試験結果を示した。Furthermore, Table 3 shows the results of a thermal cycle test, which is a life test of an LSI package using the sealing material shown in Table 2 and a low thermal expansion ceramic substrate.
なお、熱サイクル試験と一５５℃〜１５０℃の温度範囲
において行い、サイクル数は１ｌｅｌＪ−り量が５×１
０１０−１Ｏａｔ ｃｃ／ ｔｌａ下を合格とした。第
３表ノ試験に用いた基板は半導体への熱応力の影響を極
力抑えるた必、熱膨張係数が３７×１０″″／℃と半導
体と同程度の低熱膨張特性を有するＳｉＣ基板を用いた
。In addition, the heat cycle test was conducted in the temperature range of -55°C to 150°C, and the number of cycles was 1lJ - 5 x 1
010-1 Oat cc/tla or lower was considered to be a pass. In order to minimize the influence of thermal stress on the semiconductor, the substrate used in the tests in Table 3 was a SiC substrate with a coefficient of thermal expansion of 37 x 10''/°C, which is comparable to that of semiconductors. .
表に示されているように本発明の封着材料Ｃ１、Ｃ−６
、Ｃ−８を用いたＮｏ、Ｅ−］〜３のパッケージの熱づ
イクル数は２０００ザイクル以上を示し、従来の封着材
料Ｄ−１を用いたパッケージＧ１に比較して２倍以」二
の熱サイクル数をクリ了することが確認された。また、
基板に低熱膨張時性を示ずＳｌ、ムライト、八１Ｎを用
いた場合においてもＳｉＣ基板同様、優れた熱ザイクル
特性を示すことが確Ｓ忍されｊこ。Sealing materials C1, C-6 of the present invention as shown in the table
The number of thermal cycles of packages No., E-] to 3 using C-8 was more than 2000 cycles, which was more than twice that of package G1 using conventional sealing material D-1. It was confirmed that the number of thermal cycles could be exceeded. Also,
It is certain that even if the substrate is made of Sl, mullite, or 81N, which does not exhibit low thermal expansion properties, it will exhibit excellent thermal cycle characteristics just like the SiC substrate.
本発明によれば、流動性に優れ低温での作業性がよく、
しだも高強度の低熱膨張特性をもつ封着材料が得られ、
これと低熱膨張特性をもつパラケシ基板とを組合わせる
ことにより、気密性及び熱ザイクル特性など信頼性の高
いＬＳＩパッヶジが得られる。According to the present invention, it has excellent fluidity and good workability at low temperatures,
A sealing material with high strength and low thermal expansion properties can be obtained.
By combining this with a para-poppy substrate having low thermal expansion characteristics, an LSI package with high reliability such as airtightness and thermal cycle characteristics can be obtained.
第１図は、本発明の」」着材料を適用したＬＳＩパッケ
ージの断面図である。
４・・パッケージキャップ、５・・・ＬＳＩ（Ｓｉ半導
体）、７・・」」着材料、８・・・パッケージ基板特許
出願人 株式会社 日立製作所FIG. 1 is a sectional view of an LSI package to which the adhesive material of the present invention is applied. 4...Package cap, 5...LSI (Si semiconductor), 7...'' bonding material, 8...Package substrate patent applicant Hitachi, Ltd.
Claims (1)
熱膨張材粉末との混合物からなる封着材料。 ２、Ｖ＿２Ｏ＿５を主成分とし、Ｐ＿２Ｏ＿５及びＳｂ
＿２Ｏ＿３を含有している非晶質ガラスからなる低融点
ガラス粉末と低熱膨張材粉末との混合物からなる封着材
料。 ３、変形温度（１０＾１＾１ポーズの粘度）が４００℃
以下、熱膨張係数が９０×１０＾−＾７／℃以下である
Ｖ＿２Ｏ＿５を主成分とする低融点ガラス粉末と低熱膨
張材粉末との混合物からなる封着材料。 ４、Ｖ＿２Ｏ＿５を主成分とした低融点ガラス粉末と、
β−ユークリプタイト、β−スポジューメン、コージェ
ライト、石英ガラス、チタン酸鉛、ＮａＺｒ＿２（ＰＯ
＿４）＿３、ＣａＺｒ＿２（ＰＯ＿４）＿３、ＫＺｒ＿
２（ＰＯ＿４）＿３のうちから選ばれた少なくとも一種
以上からなる低熱膨張材粉末との混合物からなる封着材
料。 ５、Ｖ＿２Ｏ＿５を主成分とした低融点ガラス粉末と低
熱膨張材粉末との混合物からなる封着材料によって封止
されていることを特徴とするセラミックパッケージ。[Claims] 1. A sealing material made of a mixture of a low melting point glass powder containing V_2O_5 as a main component and a low thermal expansion material powder. 2. Main component is V_2O_5, P_2O_5 and Sb
A sealing material made of a mixture of a low melting point glass powder made of amorphous glass containing _2O_3 and a low thermal expansion material powder. 3. Deformation temperature (viscosity of 10^1^1 pose) is 400℃
Hereinafter, a sealing material made of a mixture of a low melting point glass powder containing V_2O_5 as a main component and a low thermal expansion material powder having a coefficient of thermal expansion of 90×10^-^7/°C or less. 4. A low melting point glass powder containing V_2O_5 as the main component,
β-eucryptite, β-spodumene, cordierite, quartz glass, lead titanate, NaZr_2 (PO
_4)_3, CaZr_2(PO_4)_3, KZr_
2(PO_4)_3 A sealing material made of a mixture with a low thermal expansion material powder made of at least one selected from the group consisting of: 5. A ceramic package sealed with a sealing material made of a mixture of a low melting point glass powder containing V_2O_5 as a main component and a low thermal expansion material powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085770A JP2767276B2 (en) | 1989-04-06 | 1989-04-06 | Sealing material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1085770A JP2767276B2 (en) | 1989-04-06 | 1989-04-06 | Sealing material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02267137A true JPH02267137A (en) | 1990-10-31 |
| JP2767276B2 JP2767276B2 (en) | 1998-06-18 |
Family
ID=13868111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1085770A Expired - Fee Related JP2767276B2 (en) | 1989-04-06 | 1989-04-06 | Sealing material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2767276B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05147974A (en) * | 1991-11-25 | 1993-06-15 | Nippon Electric Glass Co Ltd | Seal bonding material |
| EP1620369A2 (en) * | 2003-04-16 | 2006-02-01 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
| JP2007320822A (en) * | 2006-06-02 | 2007-12-13 | Hitachi Ltd | Glass sealing material, frame glass for flat-panel type display device, and flat-panel type display device |
| CN100412017C (en) * | 2003-11-11 | 2008-08-20 | 京东方科技集团股份有限公司 | Lead-free sealing glass and producing method |
| US7452489B2 (en) | 2006-06-02 | 2008-11-18 | Hitachi Displays, Ltd. | Conductive material, method of producing the same, visual display device, and glass spacer thereof |
| JP2009221049A (en) * | 2008-03-17 | 2009-10-01 | Nippon Electric Glass Co Ltd | Sealing material |
| US8071183B2 (en) | 2006-06-02 | 2011-12-06 | Hitachi Displays, Ltd. | Display apparatus |
| KR20120027328A (en) | 2009-05-15 | 2012-03-21 | 도아고세이가부시키가이샤 | Low thermal expansion filler, method for producing same, and glass composition |
| US8231883B2 (en) | 2009-05-15 | 2012-07-31 | Toagosei Co., Ltd. | Silver-based inorganic antimicrobial agent and method for preparing the same |
| JP2014509295A (en) * | 2011-02-22 | 2014-04-17 | ガーディアン・インダストリーズ・コーポレーション | Frit material mainly composed of vanadium and method for producing the same |
| KR20160086341A (en) | 2013-11-20 | 2016-07-19 | 도아고세이가부시키가이샤 | Filler and glass composition, and method for producing hexagonal phosphate compound |
| US10087676B2 (en) | 2011-02-22 | 2018-10-02 | Guardian Glass, LLC | Vanadium-based frit materials, and/or methods of making the same |
| US10858880B2 (en) | 2011-02-22 | 2020-12-08 | Guardian Glass, LLC | Vanadium-based frit materials, binders, and/or solvents and/or methods of making the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009063891A1 (en) | 2007-11-14 | 2009-05-22 | Toagosei Co., Ltd. | Method for production of hexagonal zirconium phosphate powder |
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| JPS6027620A (en) * | 1983-07-26 | 1985-02-12 | Iwaki Glass Kk | Sealing composition |
| JPS6272543A (en) * | 1985-09-27 | 1987-04-03 | Hitachi Ltd | Glass composition |
| JPS6278128A (en) * | 1985-10-02 | 1987-04-10 | Hitachi Ltd | Water-resistant and low-temperature softening glass composition |
| JPS63502583A (en) * | 1986-02-19 | 1988-09-29 | ヴイエルエスアイ パッケージング マテリアルズ，インコーポレイテッド | Low temperature melting glass composition |
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| JP2006524419A (en) * | 2003-04-16 | 2006-10-26 | コーニング インコーポレイテッド | Glass package sealed with frit and manufacturing method thereof |
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| JP2007320822A (en) * | 2006-06-02 | 2007-12-13 | Hitachi Ltd | Glass sealing material, frame glass for flat-panel type display device, and flat-panel type display device |
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| JP2014509295A (en) * | 2011-02-22 | 2014-04-17 | ガーディアン・インダストリーズ・コーポレーション | Frit material mainly composed of vanadium and method for producing the same |
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