JPH02262357A - Method of sending and receiving signal in laminated semiconductor device - Google Patents
Method of sending and receiving signal in laminated semiconductor deviceInfo
- Publication number
- JPH02262357A JPH02262357A JP1084496A JP8449689A JPH02262357A JP H02262357 A JPH02262357 A JP H02262357A JP 1084496 A JP1084496 A JP 1084496A JP 8449689 A JP8449689 A JP 8449689A JP H02262357 A JPH02262357 A JP H02262357A
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- Prior art keywords
- semiconductor
- signal
- layers
- light
- emitting element
- Prior art date
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- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract 5
- 238000012546 transfer Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
本発明は、半導体素子乃至回路を形成乃至搭載している
３以上の複数個の半導体基板乃至層が積層されている積
層体を有する積層半導体装置において、その複数の半導
体基板乃至層中の互に隣接していない所要の２つ以上の
第１及び第２の半導体基板乃至層間の信号の授受を、第
１及び第２の半導体基板乃至層中の一方からの信号を第
１及び第２の半導体基梶乃至層中の他方に伝送させる態
様で行わせる、積層半導体装置における信号授受方法に
関する。The present invention relates to a stacked semiconductor device having a stacked body in which three or more semiconductor substrates or layers on which semiconductor elements or circuits are formed or mounted are stacked. Transmission and reception of signals between two or more required first and second semiconductor substrates or layers that are not adjacent to each other is performed by transmitting a signal from one of the first and second semiconductor substrates or layers to the first and second semiconductor substrates or layers. The present invention relates to a method for transmitting and receiving signals in a stacked semiconductor device, in which transmission is performed from one layer to another in a layer.
従来、第２図に示すような、半導体素子乃至回路を形成
乃至搭載している複数ｎ個（ただし、ｎは３以上の整数
）の半導体基板乃至層Ａ１Ａ２・・・・・・・・・Ａｏ
が、空気などの気体、シリコン酸化物、合成樹脂などの
固体などでなる絶縁層Ｂ 、Ｂ ・・・・・・・・
・Ｂ −を介して、順次積層１２ ２３ （
ｎｌ）ｎ
されている積層体Ｃを有する積層半導体装置Ｍが提案さ
れている。
また、従来、このような積層半導体装置Ｍにおいて、半
導体基板乃至層Ａ １Ａ２・・・・・・・・・Ａ。中の
互に隣接していない所要の２つの半導体基板乃至、１ｉ
ｉｉ（これを一般にＡ 及びＡ、とする）間の信号の授
受を、半導体基板乃至層Ａａ及びＡｂ中の一方（これを
半導体基板乃至層Ａ８とする）からの信号（これをＳす
る）を、半導体基板乃至層Ａａ及びＡｂ中の他方（これ
を半導体基板乃至層Ａ、とする）に伝送させる態様で、
行わせるにつき、次の積層半導体装置における信号授受
方法が提案されている。
すなわち、第３図及び第４図に示すように、半導体基板
乃至層Ａ８上に、それからの信号Ｓを出力する信号出力
端Ｔ８を設ける。
また、半導体基板Ａ、上に、信号Ｓを入力し得る信号入
力端Ｔｂを設ける。
そして、それら信号出力端Ｔ８及び信号入力端Ｔｂ間に
、金属配線Ｗａｂを、第３図に示すように、積層体Ｃの
信号出力端Ｔａ及び信号入力端Ｔｂ間の領域Ｆを迂回し
て延長させ、または第４図に示すように、積層体Ｃの信
号出力端Ｔ、及び信号入力端１５間の領域Ｆを貫通して
延長させることによって、半導体基板乃至ＩＡ。
の信号出力端Ｔ、からの信号Ｓを、金属配線層Ｗａｂを
介して、半導体基板乃至層Ａ、の信号入力端Ｔ、に入力
させる。
以上が、従来提案されている積層半導体装置における信
号授受方法である。
このような積層半導体装置における信号授受方法によれ
ば、半導体基板乃至層Ａ の信号比力＠Ｔａと半導体基
板乃至層Ａｂの信号入力端Ｔｂとの間に金属配線Ｗａｂ
が延長しているので、半導体基板乃至層Ａａ及びＡ５間
の信号Ｓの授受を、半導体基板乃至層Ａａからの信号Ｓ
を半導体基板乃至層Ａ、に伝送させる態様で行わせるこ
とができる。Conventionally, as shown in FIG. 2, a plurality of n (n is an integer of 3 or more) semiconductor substrates or layers on which semiconductor elements or circuits are formed or mounted A1A2...Ao
However, insulating layers B and B are made of gas such as air, solids such as silicon oxide, synthetic resin, etc.
・Sequentially laminated 12 23 (
A stacked semiconductor device M having a stacked body C of nl)n has been proposed. Furthermore, conventionally, in such a stacked semiconductor device M, semiconductor substrates or layers A1A2...A. The required two semiconductor substrates that are not adjacent to each other in
ii (generally referred to as A and A), the signal from one of the semiconductor substrates or layers Aa and Ab (this is referred to as the semiconductor substrate or layer A8) (this is referred to as S). , in a mode of transmitting to the other of the semiconductor substrate or layers Aa and Ab (this will be referred to as the semiconductor substrate or layer A),
To accomplish this, the following method of transmitting and receiving signals in a stacked semiconductor device has been proposed. That is, as shown in FIGS. 3 and 4, a signal output terminal T8 for outputting a signal S from the semiconductor substrate or layer A8 is provided on the semiconductor substrate or layer A8. Furthermore, a signal input terminal Tb to which a signal S can be input is provided on the semiconductor substrate A. Then, a metal wiring Wab is extended between the signal output end T8 and the signal input end Tb, bypassing the area F between the signal output end Ta and the signal input end Tb of the laminate C, as shown in FIG. or, as shown in FIG. 4, by penetrating and extending the region F between the signal output terminal T and the signal input terminal 15 of the laminate C, the semiconductor substrate or IA. The signal S from the signal output terminal T of the semiconductor substrate or layer A is inputted to the signal input terminal T of the semiconductor substrate or layer A through the metal wiring layer Wab. The above is the conventionally proposed method for transmitting and receiving signals in a stacked semiconductor device. According to such a method of transmitting and receiving signals in a stacked semiconductor device, a metal wiring W is connected between the signal specific power @Ta of the semiconductor substrate or layer A and the signal input terminal Tb of the semiconductor substrate or layer Ab.
Since the signal S from the semiconductor substrate or layer Aa is extended, the signal S from the semiconductor substrate or layer Aa is transferred between the semiconductor substrate or layer Aa and A5.
This can be carried out in such a manner that it is transmitted to the semiconductor substrate or layer A.
しかしながら、第３図に示す従来の積層半導体装置にお
ける信号授受方法の場合、半導体基板乃至層Ａ の信号
出力″４Ｔａと半導体基板乃金層ＡｂＯ）信号入力端Ｔ
ｂとの間に延長している金属配線〜■ａｂが、積層体Ｃ
の信号出力端Ｔ。
及び信号入力端１５間の領１４Ｆを迂回しているため、
金属配線層Ｗａｂが長い配線長を有し、このため、半導
体基板乃至ｍＡａから半導体基板乃至層Ａ、に伝送され
る信号に、遅延時間が無視し得ない長い長さで生ずる、
という欠点を有していた。
また、第４図に示す従来の積層半導体装置における信号
授受方法の場合、半導体基板乃至層Ａａの信号出力端Ｔ
ａと半導体基板乃至層Ａｂの信号入力端Ｔｂとの間に延
長している金属配線Ｗａｂが、積層体Ｃの信号出力端Ｔ
８及び信号入力端Ｔｂ間の領域Ｆを貫通しているため、
積層体Ｃの信号出力端Ｔａ及び信号入力端Ｔｂ間の領域
Ｆに、金属配線Ｗａｂを貫通させるための貫通孔を穿設
したり、領域Ｆにおいて、金属配線層Ｗａｂと領域Ｆに
おける半導体基板乃至層との間に絶縁を施したりする、
という困難の伴う処理が必要である、という欠点を有し
ていた。
よって、本発明は、上述した欠点のない、新規な積層半
導体装置における信号授受方法を提案せんとするもので
ある。However, in the case of the signal transfer method in the conventional stacked semiconductor device shown in FIG.
The metal wiring ~■ab extending between the laminate C and
signal output terminal T. Since the area 14F between the signal input terminal 15 and the signal input terminal 15 is bypassed,
The metal wiring layer Wab has a long wiring length, and therefore a long delay time that cannot be ignored occurs in the signal transmitted from the semiconductor substrate or mAa to the semiconductor substrate or layer A.
It had the following drawback. In addition, in the case of the signal transfer method in the conventional stacked semiconductor device shown in FIG. 4, the signal output terminal T of the semiconductor substrate or layer Aa
The metal wiring Wab extending between the signal input terminal Tb of the semiconductor substrate or layer Ab and the signal output terminal Tb of the laminate C
8 and signal input terminal Tb,
In the region F between the signal output end Ta and the signal input end Tb of the laminate C, a through hole for passing the metal wiring Wab is formed, or in the region F, a through hole is formed between the metal wiring layer Wab and the semiconductor substrate in the region F. provide insulation between layers,
This method has the disadvantage that it requires difficult processing. Therefore, it is an object of the present invention to propose a novel method for transmitting and receiving signals in a stacked semiconductor device, which does not have the above-mentioned drawbacks.
本発明による積層半導体装置における信号授受方法は、
（イ）■第２図で上述した従来の積層半導体装置におけ
る信号授受方法の場合と同様
の、半導体素子乃至回路を形成乃至搭
載している３以上の複数個の半導体基
板乃至層が積層されている積、―体を有する積層半導体
装置において、
■第３図及び第４図で上述した従来の積層半導体装置に
おける信号授受方法の
場合と同様に、上記複数の半導体基板
乃至層中の互に隣接していない所要の
２つ以上の第１及び第２の半導体基板
乃至層間の信号の授受を、上記第１及
び第２の半導体基板乃至層中の一方か
らの信号を上記第１及び第２の半導体
基板乃至層中の他方に伝送させる態様
で行わせるにつき、
（ロ）■上記第１及び第２の半導体基板乃至層中の一方
に、上記信号を乗せた信号光
を発生する半導体発光素子を設け、ま
た、
■上記第１及び第２の半導体基板乃至層中の他方に、上
記信号光を受光し得る
半導体受光素子を設け、この場合、
■上記半導体発光素子として、上記信号光が上記積層体
の上記半導体発光素子
及び上記半導体受光素子間の領域の光
吸収端よりも長い波長を有する光で得
られる発光素子を用い、そして、
■上記半導体発光素子からの信号光を、上記半導体受光
素子に、上記積層体の
上記半導体発光素子及び上記半導体受
光素子間の領域を透過させて入射させ
る。The method for transmitting and receiving signals in a stacked semiconductor device according to the present invention is as follows: (a) Same as the method for transmitting and receiving signals in the conventional stacked semiconductor device described above in FIG. 2, three or more semiconductor elements or circuits are formed or mounted. In a stacked semiconductor device having a multilayer structure in which a plurality of semiconductor substrates or layers are stacked, (1) As in the case of the signal exchange method in the conventional stacked semiconductor device described above in FIGS. 3 and 4, Transmitting and receiving signals between two or more required first and second semiconductor substrates or layers that are not adjacent to each other among the plurality of semiconductor substrates or layers is performed between the first and second semiconductor substrates or layers. In order to transmit a signal from one to the other of the first and second semiconductor substrates or layers, (b) ■ the signal is transmitted to one of the first and second semiconductor substrates or layers; A semiconductor light-emitting element that generates a signal light carrying the above is provided, and (1) a semiconductor light-receiving element capable of receiving the signal light is provided on the other of the first and second semiconductor substrates or layers; As the semiconductor light emitting device, a light emitting device is used in which the signal light is obtained by light having a wavelength longer than the light absorption edge of a region between the semiconductor light emitting device and the semiconductor light receiving device of the laminate, and (1) the semiconductor Signal light from the light emitting element is made to enter the semiconductor light receiving element through a region between the semiconductor light emitting element and the semiconductor light receiving element of the laminate.
本発明による積層半導体装置における信号授受方法によ
れば、第１及び第２の半導体基板乃至層中の一方に設け
られた半導体発光素子が、第１及び第２の半導体基板乃
至層中の一方からの信号を乗せた信号光を発生し、また
、第１及び第２の半導体基板乃至層中の他方に設けられ
半導体受光素子が、半導体発光１素子からの信号光を受
光し得、そして、半導体発光素子からの信号光を、半導
体受光素子に入射させている。
このため、第３図及び第４図で上述した従来の積層半導
体装置における信号授受方法の場合と同様に、第１及び
第２の半導体基板乃至層間の信号の授受を、第１及び第
２の半導体基板乃至層中の一方からの信号を第１及び第
２の半導体基板乃至層中の他方に伝送させる態様で行わ
せることができる。
しかしながら、本発明による積層半導体装置における信
号授受方法の場合、第１及び第２の半導体基板乃至層間
の信号の授受を、第１及び第２の半導体基板乃至層中の
一方に設けた半導体発光素子から第１及び第２の半導体
基板乃至層中の他方に設けた半導体受光素子に入射する
信号光を用いて行い、しかも、その信号光を、積層体の
半導体発光素子及び半導体受光素子間の領域に透過させ
て行うので、第１及び第２の半導体基板乃至層の一方か
ら他方に伝送される信号に遅延時間が生ずるとして、も
、それが、第３図で上述した従来の積層半導体装置にお
ける信号授受方法の場合に比し格段的に短い無視し得る
長さでしか生ぜず、また、第４図に示す従来の積層半導
体装置における信号授受方法で上述した困難を伴う処理
を必要としない。According to the method for transmitting and receiving signals in a stacked semiconductor device according to the present invention, a semiconductor light emitting element provided on one of the first and second semiconductor substrates or layers is connected to the semiconductor light emitting element provided on one of the first and second semiconductor substrates or layers. A semiconductor light-receiving element provided on the other of the first and second semiconductor substrates or layers can receive the signal light from the semiconductor light-emitting element; Signal light from the light emitting element is made incident on the semiconductor light receiving element. Therefore, as in the case of the signal transfer method in the conventional stacked semiconductor device described above in FIGS. 3 and 4, the signal transfer between the first and second semiconductor substrates or layers is This can be done in such a way that a signal from one of the semiconductor substrates or layers is transmitted to the other of the first and second semiconductor substrates or layers. However, in the case of the method for transmitting and receiving signals in a stacked semiconductor device according to the present invention, transmitting and receiving signals between the first and second semiconductor substrates or layers is performed using a semiconductor light emitting element provided on one of the first and second semiconductor substrates or layers. The signal light is incident on the semiconductor light-receiving element provided on the other of the first and second semiconductor substrates or layers, and the signal light is transmitted to the area between the semiconductor light-emitting element and the semiconductor light-receiving element of the stack. Even if there is a delay time in the signal transmitted from one of the first and second semiconductor substrates or layers to the other, this is due to the delay time in the conventional stacked semiconductor device described above in FIG. This occurs over a negligible length, which is much shorter than that in the signal transfer method, and does not require the difficult processing described above in the signal transfer method in the conventional stacked semiconductor device shown in FIG.
次に、第１図を伴って本発明による積層半導体装置にお
ける信号授受方法の実施例を述べよう。
第１図において、第２図〜第４図との対応部分には同一
符号を付し、詳細説明は省略する。
第１図に示す本発明による積層半導体装置における信号
授受方法においては、第２図で上述した従来の積層半導
体装置にお【プる信号授受方法と同様の、半導体素子乃
至回路を形成乃至搭載している複数ｎ個の半導体基板乃
至層Ａ１、Ａ２・・・・・・・・・Ａｏが絶縁層Ｂ
、Ｂ ・・・・・・・・・Ｂ（。
−１）。を介して、順次積層されている積層体Ｃを有す
る積層半導体装置Ｍにおいて、第３図及び第４図に示す
従来の積層半導体装置における信号授受方法で上述した
と同様に、複数ｎ個の半導体基板乃至層Ａ１〜Ａｏ中の
互に隣接しない所要の２つの半導体基板乃至層Ａ、及び
Ａ１間の信号の授受を、一方の半導体基板乃至層Ａａか
らの信号Ｓを他方の半導体基板乃至層Ａｂに伝送させる
態様で行わせるにつき、次の方法をとる。
すなわち、半導体基板乃至層Ａａ上に、それからの信号
Ｓを乗せた信号光Ｓ′を発生する半導体発光素子Ｇを設
け、一方、半導体基板乃至層Ａ、上に、半導体発光素子
Ｇが発生する信号光Ｓ′を受光し得る半導体受光素子Ｈ
を設ける。
この場合、半導体基板乃至層Ａ１〜Ａｏが、厚さ方向に
みて、互に等しい波長λ８の最長光吸収端を有し、また
、絶縁層８１２〜Ｂ（。−１）。が、同様に厚さ方向に
みて、互に等しい波長λｂの最長光吸収端を有し、そし
て、最長光吸収端λ８及び最長光吸収端λ５中の長い方
の波長（実際上は、λ 〉λｂの関係を有するので、λ
、）の光吸収端を、領域Ｆの光吸収端λｆとするとき、
半導体基板乃至層Ａ、上の半導体発光素子Ｇとして、信
号光Ｓ′が、光吸収端λ、よりも長い波長λ５を有する
光で得られる発光素子を用いる。
なお、実際上、半導体基板乃至層Ａ１〜Ａ。
が互に同じ３ｉ系で構成されている場合、絶縁層Ｂ
−８−が空気による気体でなるか、１２ （ｎ １
）ｎ
シリコン酸化物、合成樹脂などの固体でなるかに関せず
、発光素子Ｇとしては、ＩｎＧａＡｓＰ系で構成され且
つ信号Ｓによって変調されるように構成されたレーザダ
イオードとし得、また、半導体受光素子Ｈとしては、同
様にＩｎＧａＡｓＰ系で構成されたフォトダイオードと
し得る。
また、半導体受光素子Ｈは、半導体基板乃至層Ａｂ上の
、積層体Ｃの厚さ方向に半導体発光素子Ｇを通って延長
している線上の位置に設けるを可とする。
そして、半導体発光素子Ｇからの信号光Ｓ′を、半導体
受光素子Ｈに、積層体Ｃの上述した領域Ｆを透過させて
入射させる。
以上が、本発明による積層半導体装置における信号授受
方法の実施例である。
このような本発明による積層半導体装置における信号授
受方法によれば、半導体基板乃至層Ａ８に設けられた半
導体発光素子Ｇが、半導体基板凸〒層Ａ８からの信号Ｓ
を乗せた信号光Ｓを発生し、また、半導体基板乃至層Ａ
ａに設けられ半導体受光素子Ｈが、半導体発光素子Ｇか
らの信号光Ｓ′を受光し得、そして、半導体発光素子Ｇ
からの信号光Ｓ′を、半導体受光素子Ｈに入射させてい
る。
従って、第１図に示す本発明による積層半導体装置にお
ける信号授受方法によれば１、第３図及び第４図で上述
した従来の積層半導体装置における信号授受方法の場合
と同様に、半導体基板乃至層Ａａ及びＡｂ間の信号Ｓの
授受を、半導体基板乃至層Ａａからの信号Ｓを半導体基
板乃至層Ａｂに伝送させる態様で行わせることができる
。
しかしながら、第１図に示す本発明による積層半導体装
置における信号授受方法の場合、半導体基板乃至層Ａ８
及びＡｂ間の信号Ｓの授受を、半導体基板乃至８Ａａに
設けた半導体発光素子Ｇから半導体基板乃至層Ａｂｌ、
：設けた半導体受光素子Ｈに入射する信号光Ｓ′を用い
て行い、しかも、その信号光Ｓ′を、積層体Ｃの半導体
発光素子Ｇ及び半導体受光素子Ｈ間の領域Ｆに透過させ
て行うので、半導体基板乃至層Ａ８から半導体基板乃至
層Ａｂに伝送される信号Ｓに遅延時間が生ずるとしても
、それが、第３図で上述した従来の積層半導体装２にお
ける信号授受方法の場合に比し格段的に短い無視し得る
長さでしか生ぜず、また、第４図に示す従来の積層半導
体装置における信号授受方法で上述した困難を伴う処理
を必要としない。
なお、第１図においては、半導体発光素子Ｇを設けてい
る半導体基板乃至層Ａ８が、半導体受光素子Ｈを設けて
いる半導体基板乃至Ｅ Ａ Ｂ下に位置している場合を
示しているが、半導体発光素・子Ｇを設けている半導体
基板乃至＠Ａ８が、半導体受光素子Ｈを設けている半導
体基板乃至層Ａａ上に位置している場合でも、上述した
と同様の作用効果が得られることは明らかであろう。
その他、本発明の精神を脱することなしに、種々の変型
、変更をなし得るであろう。Next, an embodiment of a method for transmitting and receiving signals in a stacked semiconductor device according to the present invention will be described with reference to FIG. In FIG. 1, parts corresponding to those in FIGS. 2 to 4 are designated by the same reference numerals, and detailed description thereof will be omitted. In the signal transfer method in a stacked semiconductor device according to the present invention shown in FIG. a plurality of n semiconductor substrates or layers A1, A2...Ao is an insulating layer B
,B...B(.-1). In a stacked semiconductor device M having a stacked body C that is sequentially stacked, a plurality of n semiconductors The transmission and reception of signals between two required semiconductor substrates or layers A and A1 that are not adjacent to each other among the substrates or layers A1 to Ao is performed by transmitting a signal S from one semiconductor substrate or layer Aa to the other semiconductor substrate or layer Ab. The following method is used to transmit the information to the That is, on the semiconductor substrate or layer Aa, there is provided a semiconductor light emitting element G that generates a signal light S' carrying a signal S therefrom, and on the other hand, on the semiconductor substrate or layer A, the signal generated by the semiconductor light emitting element G is provided. Semiconductor light receiving element H capable of receiving light S'
will be established. In this case, the semiconductor substrates or layers A1 to Ao have the longest light absorption edges of the same wavelength λ8 when viewed in the thickness direction, and the insulating layers 812 to B(.-1). Similarly, when viewed in the thickness direction, the longest optical absorption edges have the same wavelength λb, and the longer wavelength of the longest optical absorption edge λ8 and the longest optical absorption edge λ5 (actually, λ 〉 Since it has the relationship λb, λ
, ) is the light absorption edge λf of region F,
As the semiconductor light emitting element G on the semiconductor substrate or layer A, a light emitting element in which the signal light S' is obtained by light having a wavelength λ5 longer than the optical absorption edge λ is used. Incidentally, in reality, the semiconductor substrate or the layers A1 to A. are composed of the same 3i system, the insulating layer B
-8- is a gas due to air, or 12 (n 1
)n Regardless of whether it is made of a solid such as silicon oxide or synthetic resin, the light emitting element G may be a laser diode made of InGaAsP and configured to be modulated by the signal S; The light receiving element H may be a photodiode similarly made of InGaAsP. Further, the semiconductor light receiving element H can be provided on the semiconductor substrate or layer Ab at a position on a line extending through the semiconductor light emitting element G in the thickness direction of the laminate C. Then, the signal light S' from the semiconductor light emitting device G is transmitted through the above-mentioned region F of the stacked body C and made to enter the semiconductor light receiving device H. The above is an embodiment of the signal exchange method in a stacked semiconductor device according to the present invention. According to the method for transmitting and receiving signals in a stacked semiconductor device according to the present invention, the semiconductor light emitting element G provided on the semiconductor substrate or layer A8 receives the signal S from the layer A8 on the semiconductor substrate.
It generates a signal light S carrying a semiconductor substrate or a layer A.
The semiconductor light-receiving element H provided at a can receive the signal light S' from the semiconductor light-emitting element G, and
The signal light S' is made incident on the semiconductor light receiving element H. Therefore, according to the method for transmitting and receiving signals in a stacked semiconductor device according to the present invention shown in FIG. The transmission and reception of the signal S between the layers Aa and Ab can be performed in such a manner that the signal S from the semiconductor substrate or the layer Aa is transmitted to the semiconductor substrate or the layer Ab. However, in the case of the signal transfer method in the stacked semiconductor device according to the present invention shown in FIG.
The transmission and reception of the signal S between the semiconductor substrate and the layer Abl, from the semiconductor light emitting element G provided on the semiconductor substrate or 8Aa, to the semiconductor substrate or layer Abl,
: Performed using the signal light S' that is incident on the provided semiconductor light receiving element H, and moreover, the signal light S' is transmitted to the region F between the semiconductor light emitting element G and the semiconductor light receiving element H of the laminate C. Therefore, even if there is a delay time in the signal S transmitted from the semiconductor substrate or layer A8 to the semiconductor substrate or layer Ab, it is much shorter than in the case of the signal transfer method in the conventional stacked semiconductor device 2 described above in FIG. However, this occurs only in a significantly short and negligible length, and does not require the difficult processing described above in the signal transfer method in the conventional stacked semiconductor device shown in FIG. Note that although FIG. 1 shows a case where the semiconductor substrate or layer A8 on which the semiconductor light-emitting element G is provided is located below the semiconductor substrate or layer A8 on which the semiconductor light-receiving element H is provided, Even if the semiconductor substrate on which the semiconductor light emitting element/device G is provided or @A8 is located on the semiconductor substrate or layer Aa on which the semiconductor light receiving element H is provided, the same effects as described above can be obtained. should be obvious. Various other modifications and changes may be made without departing from the spirit of the invention.
第１図は、本発明による積層半導体装置における信号授
受方法を示す路線図である。
第２図は、本発明及び従来の積層半導体装置における信
号授受方法の適用されている積層半導体装置を示す路線
図である。
第３図及び第４図は、従来の積層半導体装置における信
号授受方法を示す路線図である。
Ａ −Ａ 、Ａ 、Ａ、・・・・・・・・・・・
・・・・半導体ｎａ
基板乃至層
８１２〜Ｂ（ｎ−１）ｎ
・・・・・・・・・・・・・・・絶縁層Ｃ・・・・・・
・・・・・・・・・積層体Ｇ・・・・・・・・・・・・
・・・半導体発光素子Ｈ・・・・・・・・・・・・・・
・半導体受光素子Ｍ・・・・・・・・・・・・・・・積
層半導体装置Ｓ′・・・・・・・・・・・・信号光FIG. 1 is a route diagram showing a method for transmitting and receiving signals in a stacked semiconductor device according to the present invention. FIG. 2 is a route diagram showing a stacked semiconductor device to which the present invention and a conventional method for transmitting and receiving signals in a stacked semiconductor device are applied. FIGS. 3 and 4 are route diagrams showing a signal exchange method in a conventional stacked semiconductor device. A-A, A, A, ・・・・・・・・・・・・
...Semiconductor na substrate or layer 812 to B(n-1)n ......Insulating layer C...
・・・・・・・・・Laminated body G・・・・・・・・・・・・
・・・Semiconductor light emitting device H・・・・・・・・・・・・・・・
・Semiconductor light-receiving element M......Stacked semiconductor device S'......Signal light
Claims (1)
数個の半導体基板乃至層が積層されている積層体を有す
る積層半導体装置において、上記複数の半導体基板乃至
層中の互に隣接していない所要の２つ以上の第１及び第
２の半導体基板乃至層間の信号の授受を、上記第１及び
第２の半導体基板乃至層中の一方からの信号を上記第１
及び第２の半導体基板乃至層中の他方に伝送させる態様
で行わせるにつき、 上記第１及び第２の半導体基板乃至層中の一方に、上記
信号を乗せた信号光を発生する半導体発光素子を設け、 上記第１及び第２の半導体基板乃至層中の他方に、上記
信号光を受光し得る半導体受光素子を設け、 上記半導体発光素子として、上記信号光が上記積層体の
上記半導体発光素子及び上記半導体受光素子間の領域の
光吸収端よりも長い波長を有する光で得られる発光素子
を用い、 上記半導体発光素子からの信号光を、上記半導体受光素
子に、上記積層体の上記半導体発光素子及び上記半導体
受光素子間の領域を透過させて入射させることを特徴と
する積層半導体装置における信号授受方法。[Scope of Claims] In a stacked semiconductor device having a stacked body in which three or more semiconductor substrates or layers on which semiconductor elements or circuits are formed or mounted are stacked, one of the plurality of semiconductor substrates or layers is Transmission and reception of signals between two or more required first and second semiconductor substrates or layers that are not adjacent to each other is performed by transmitting a signal from one of the first and second semiconductor substrates or layers to the first semiconductor substrate or layer.
and a semiconductor light emitting element that generates a signal light carrying the above signal on one of the first and second semiconductor substrates or layers, in order to transmit the signal to the other of the second semiconductor substrates or layers. a semiconductor light receiving element capable of receiving the signal light is provided on the other of the first and second semiconductor substrates or layers, and as the semiconductor light emitting element, the signal light is transmitted to the semiconductor light emitting element of the laminate and Using a light emitting element that obtains light having a wavelength longer than the light absorption edge of the region between the semiconductor light receiving elements, signal light from the semiconductor light emitting element is transmitted to the semiconductor light receiving element of the semiconductor light receiving element of the laminate. and a method for transmitting and receiving signals in a stacked semiconductor device, characterized in that the signal is transmitted through a region between the semiconductor light-receiving elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1084496A JPH02262357A (en) | 1989-04-03 | 1989-04-03 | Method of sending and receiving signal in laminated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1084496A JPH02262357A (en) | 1989-04-03 | 1989-04-03 | Method of sending and receiving signal in laminated semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02262357A true JPH02262357A (en) | 1990-10-25 |
Family
ID=13832255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1084496A Pending JPH02262357A (en) | 1989-04-03 | 1989-04-03 | Method of sending and receiving signal in laminated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02262357A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200631A (en) * | 1991-08-06 | 1993-04-06 | International Business Machines Corporation | High speed optical interconnect |
| US7385655B2 (en) | 2002-09-02 | 2008-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit device with optical sensors and optical shutters at specific locations |
| US7769253B2 (en) | 2002-09-02 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit device |
| WO2014109158A1 (en) * | 2013-01-11 | 2014-07-17 | 株式会社ブイ・テクノロジー | Optical interconnection device |
-
1989
- 1989-04-03 JP JP1084496A patent/JPH02262357A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200631A (en) * | 1991-08-06 | 1993-04-06 | International Business Machines Corporation | High speed optical interconnect |
| JPH05211283A (en) * | 1991-08-06 | 1993-08-20 | Internatl Business Mach Corp <Ibm> | Optoelectronic package |
| US7385655B2 (en) | 2002-09-02 | 2008-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit device with optical sensors and optical shutters at specific locations |
| US7769253B2 (en) | 2002-09-02 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Electronic circuit device |
| WO2014109158A1 (en) * | 2013-01-11 | 2014-07-17 | 株式会社ブイ・テクノロジー | Optical interconnection device |
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