JPH02262322A - Pattern for resist heat resistance estimating equipment - Google Patents

Abstract

PURPOSE:To obtain similar diffraction images when any position of a microresist is irradiated with laser light, by forming slit type resist layers having the same width at equal intervals, and making the width and the interval of the resist layers smaller than the beam diameter of the coherent light to projected. CONSTITUTION:Microresist 104 formed on a substrate 102 is irradiated with coherent light; intensity of the diffracted light except the zero order coherent light diffracted by the microresist 104 is measured, thereby measuring shape change of the microresist 104 and estimating the heat resistance of resist. A pattern 100 applied to the above resist heat resistance estimating equipment is formed as follows; the resist layers 104 of slit type having the same width d1 are arranged at equal intervals of d2, and the width d1 and the interval d2 of the resist layers 104 are made smaller than the beam diameter of the coherent light to be projected on the above microresist 104. For example, it is desirable to make the width d1 and the interval d2 of the resist layers 104 equal.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a resist pattern applied to a resist heat resistance evaluation apparatus for evaluating the heat resistance of resists such as photoresists and electron beam resists.

<Prior Art> Semiconductor elements, RC elements, and the like are used in computers, various electrical products, and the like.

Manufacture of such elements is generally carried out by photo-etching.

The method of manufacturing an element by photoetching is to first form an electrode layer on an insulating substrate by a method such as vapor deposition or sputtering, and then apply a photoresist dissolved in a solvent to the electrode layer using a method such as a spin code. Apply.

After applying the photoresist, the photoresist solvent is evaporated through a heat treatment called pre-beta.

Next, this photoresist is exposed to light using a stepper or the like, and then developed with a predetermined developer. For example, if the photoresist is a positive type, the exposed areas are dissolved and a predetermined resist pattern is formed.

After the development is completed, the formed microresist is subjected to a heat treatment called "bost bake" for the purpose of strengthening the etching resistance and evaporating the developer.

After the formation of the microresist is completed, etching is performed at night to dissolve the electrode layer on which the microresist layer is not formed and form a conductor layer in a predetermined pattern, forming a semiconductor element or an IC element. Applicable.

By the way, in order to form a microresist to be applied to photoetching, two heating steps, pre-baking and post-bake, are performed in the manufacturing process as described above. Therefore, the applied resist is required to have heat resistance at least higher than the pre-baking and post-bake temperatures.

Testing of the heat resistance of such resists is usually performed by heating the microresist and measuring the change in the shape of the resist pattern of the microresist. Conventionally, this measurement was performed using an optical microscope or scanning. This was done by direct observation using a scanning electron microscope (SEM) or the like.

However, since such heat resistance evaluation methods involve directly observing the resist pattern with the naked eye, it is not possible to quantitatively measure changes in the shape of the resist pattern.
It is not possible to accurately evaluate the heat resistance of the formed microresist.

Furthermore, observation by SEM is a destructive test that requires cutting the sample into small sections, and therefore has the problem of being very time-consuming.

In order to solve such problems, the present inventors irradiated a microresist formed on a substrate with coherent light, caused the coherent light to be diffracted by the formed microresist, and removed the diffracted light of orders other than the 0th order. Invented a method for measuring changes in the shape of microresist, which measures changes in the shape of microresist by measuring the strength.
This was proposed earlier (Japanese Patent Application No. 63-253262).

According to this method, there is no need to cut the sample into sections, etc., and it is possible to quantitatively measure changes in the shape of the microresist from changes in the intensity of the diffracted light of coherent light. By measuring the change in the shape of the microresist in , it becomes possible to suitably evaluate the heat resistance of the resist.

<Problems to be Solved by the Invention> FIG. 5 is a schematic diagram of a measuring section of a resist heat resistance evaluation apparatus that evaluates resist heat resistance by applying the above method.

In the illustrated example, a silicon wafer or the like is used as the substrate,
A microresist having a predetermined resist pattern is formed on this and used as a sample 22.

After this sample 22 is heated under desired heating conditions,
Sample 2 is placed at a predetermined position in the resist heat resistance evaluation device.
The microresist formed at 2 is irradiated with the laser light 32a that is reflected by the mirror 40 and turned down.

The diffracted light (laser light) that is incident on the microresist and diffracted is incident on the photodiode 42, which is a means for measuring the intensity of the diffracted light, and the intensity of the diffracted light other than the 0th order is measured.

In this device, the sample 22 is heated under various heating conditions and the intensity of the diffracted light is measured, and changes in the shape of the microresist are measured from changes in the intensity of the diffracted light. The heat resistance of the resist formed on the sample 22 is evaluated based on the temperature and the degree of shape change of the microresist.

By the way, the heat resistance of the microresist formed on the sample 22 applied to such a resist heat resistance evaluation apparatus cannot be appropriately evaluated unless the resist pattern is appropriate.

In order to appropriately and accurately evaluate the heat resistance of the resist in such an apparatus, the diffracted light diffracted by the microresist of the sample 22 must be efficiently transmitted to the photodiode 42.
It is necessary to enter the

However, if the resist pattern of the microresist formed on the sample 22 is not appropriate, the diffracted light will spread in various directions and the amount of incidence on the photodiode 42 will be reduced, so it is difficult to measure the intensity of the diffracted light appropriately. I can't.

Furthermore, it is preferable that the same diffraction image can be obtained no matter where the laser beam 32a is incident on the microresist;
If the resist pattern is not suitable, the laser beam 3
The diffraction image differs depending on the irradiation position of 2a. Furthermore, depending on the resist pattern, the laser beam 32a
Even if the irradiation position is shifted by about the beam diameter, the diffraction image may differ greatly.

An object of the present invention is to solve the problems of the prior art, and to provide a pattern for a resist heat resistance evaluation device, which is applied to a resist heat resistance evaluation device that evaluates the heat resistance of a resist using coherent light. A similar diffraction image can be obtained no matter where on the resist the laser beam is irradiated, and the diffraction light is spread one-dimensionally so that it can easily enter a measuring device such as a photodiode.
Moreover, it is an object of the present invention to provide a pattern for a resist heat resistance evaluation device that facilitates separation of each order of diffracted light.

Means for Solving the Problems> In order to achieve the above object, the present invention irradiates a microresist formed in a substrate shape with coherent light, and removes zero of the coherent light diffracted by the microresist.
A pattern for a resist heat resistance evaluation device, which is applied to a resist heat resistance evaluation device that measures the shape change of the microresist and evaluates the heat resistance of the resist by measuring the intensity of diffracted light other than the following, and has the same width. A pattern for a resist heat resistance evaluation device, characterized in that slit-shaped resist layers are formed at equal intervals, and the width and interval of the resist layers are smaller than the beam diameter of coherent light irradiated onto the microresist. I will provide a.

Further, it is preferable that the width of the resist layer to be formed and the interval between the resist layers are the same.

<Operation of the Invention> The pattern for a resist heat resistance evaluation device of the present invention is produced by irradiating a microresist formed on a substrate with coherent light and measuring the intensity of diffracted light of the coherent light from the microresist. This is applied to a resist heat resistance evaluation device that measures the shape change of the resist and evaluates the heat resistance of the resist.

Such a pattern for a resist heat resistance evaluation device of the present invention is one in which slit-shaped resist layers having the same width and narrower than the beam diameter of coherent light are formed at equal intervals narrower than the beam diameter. be.

Therefore, a constant diffraction image can be obtained no matter where the coherent light is irradiated on the microresist.
Moreover, since the diffracted light spreads one-dimensionally, it efficiently enters a measuring means such as a photodiode, making it possible to evaluate the heat resistance of the resist with high precision. Furthermore, this makes it easy to separate each order of diffracted light, making it possible to more appropriately evaluate heat resistance.

In addition, since the width and spacing of the resist layer are smaller than the beam diameter of the coherent light, preferably sufficiently small, even if the irradiation position of the coherent light shifts slightly, the obtained diffraction image remains constant, resulting in high precision. It is possible to evaluate the heat resistance of the resist.

<Embodiment> Hereinafter, a pattern for a resist heat resistance evaluation apparatus according to the present invention (
Hereinafter, the evaluation pattern) will be described in detail based on preferred embodiments shown in the attached drawings.

The evaluation pattern of the present invention is a resist pattern of a microresist formed on a substrate, which is used as a sample for a resist heat resistance evaluation device.

Here, examples of the substrate on which the evaluation pattern of the present invention is formed include silicon wafers and glass plates.

Further, the resist to be used in the present invention is not particularly limited, and can be applied to the production of semiconductor devices and IC devices, regardless of whether it is a positive type or a negative type.

FIG. 1 shows a cross-sectional view of the evaluation pattern of the present invention formed on a substrate, and FIG. 2 shows a plan view thereof.

As shown in FIGS. 1 and 2, the evaluation pattern 100 of the present invention has a slit-shaped resist layer 104 formed on a substrate 102. As shown in FIGS.

In the evaluation pattern 100 of the present invention, the widths d1 of the resist layers 104 are all equal, and the intervals d2 of the resist layers 104 are all equally spaced.

Further, the evaluation pattern 100 of the present invention includes resist layer 1
The width d of 04 is smaller, preferably sufficiently smaller, than the diameter of the coherent light beam (hereinafter referred to as beam) irradiated onto the microresist in the applied resist heat resistance evaluation device, and the width d of the resist layer 104 intervals d
2 is narrower than the beam diameter, preferably sufficiently narrow.

By forming the evaluation pattern 100 of the present invention into such a resist pattern, it is possible to always obtain a constant diffraction image, and the spread of the diffracted light can be one-dimensional. It also becomes easy to separate the diffracted light. Furthermore, even if the irradiation position of the coherent light moves, the same diffracted light can be obtained, and accurate measurements can always be performed.

The resist layer 104 forming the evaluation pattern of the present invention has a slit shape having the same width d as described above.

Here, the width d of the resist layer 104 is smaller than the diameter of the irradiated beam, preferably 1/10 or less, more preferably 1/100 or less, which is sufficiently small.

Further, the height h of such a resist layer 104 may be approximately the same as that of a resist layer applied to normal photoetching.

In the evaluation pattern of the present invention, such resist layers 104 are formed at regular intervals with intervals d2 narrower than the diameter of the irradiated beam.

Here, the interval d2 is preferably sufficiently small with respect to the beam diameter, and is 1/10 or less, more preferably 1/1,
00 or less.

The evaluation pattern 100 of the present invention is irradiated with coherent light, and its shape change is measured by measuring the intensity of the diffracted light. Therefore, as described above, by making the width d1 and the interval d2 of the resist layer 104 the same, and making both smaller than the beam diameter to be irradiated, preferably sufficiently small, it is possible to Even so, at least one resist layer 104 is completely included in the beam, making it possible to always obtain a constant diffraction image.

Note that the resist layer 104 included in the irradiated beam
The larger the number (N), the sharper the peak of the obtained diffraction image becomes, making it possible to suitably measure the intensity of diffracted light. Here, in order to better measure the intensity of the diffracted light, N is preferably a number exceeding 10, and more preferably a number exceeding 100.

In the example shown in FIGS. 1 and 2, a more preferable embodiment is that the width d of the resist layer 104 and the interval d2 thereof are equal.

By doing so, the evaluation pattern 100 of the present invention can always obtain a constant diffraction image even if the beam irradiation position is shifted, the diffracted light can spread more one-dimensionally, and the 8th order diffraction height can be separated. More favorable results can be obtained in terms of ease of use, etc.

In addition, in the evaluation pattern 100 of the present invention, the width d of the resist layer 104 and the interval d2 may be different. However, in this case, it is preferable that both satisfy the following formula (%).

Furthermore, in the evaluation pattern 100 of the present invention, in order to better measure the intensity of the diffracted light, it is preferable that the diffracted light to be measured be of the (n+1) order or higher.

FIG. 3 shows an example in which an evaluation pattern 100 of the present invention is formed using a silicon wafer 106 as a substrate.

Here, the formed resist pattern is the resist layer 104.
The width d1 and the interval d2 of the evaluation pattern 100a are 1 μm, the evaluation pattern 100b is 2 μm, the evaluation pattern 100c is 5 μm, and the evaluation pattern 100d is 10 μm. .

The heat resistance of a resist varies depending on the area of the resist pattern to be formed. Therefore, by forming a microresist having a plurality of types of evaluation patterns 100 on one substrate and adjusting the beam irradiation position or the fixing position of the sample in the resist heat resistance evaluation device, the resist at each line width can be adjusted. It becomes possible to evaluate the heat resistance of

In addition, when forming the evaluation pattern 100 of the present invention on the silicon wafer 106 as shown in the illustrated example, in order to easily adjust the incidence of the diffracted light on the diffracted light intensity measuring means, the orientation flat 108 is On the other hand, it is preferable to form a slit-like pattern perpendicularly or in parallel.

There is no particular limitation on the method of forming the evaluation pattern 100 of the present invention, and methods include applying a resist onto a substrate using a spin cord or the like, drying it, and then using a stepper, irradiating with a laser beam, or using a mask. Any conventional method for forming a resist pattern can be applied, such as a method of exposing the resist pattern to light using a method, developing with a developer, and drying the developer.

FIG. 4 shows a preferred embodiment of a resist heat resistance evaluation apparatus that evaluates the heat resistance of a resist by applying the evaluation pattern 100 of the present invention.

The resist heat resistance evaluation apparatus 10 shown in FIG.
By irradiating the microresist in step 2 with laser light as a coherent light and measuring the intensity of the diffracted light other than the 0th order of the laser light diffracted by the microresist, changes in the shape of the microresist can be measured, and the shape of the resist can be measured. This is a device for evaluating heat resistance.

Such a resist heat resistance evaluation apparatus 10 basically includes a measurement section 12 that irradiates a microresist with a laser beam 32a and measures the intensity of diffracted light other than the 0th order of the diffracted light, and a heating section 14 that heats a sample 22. and a transport section 16 that transports the sample 22 to the measuring section 12 and the heating section 14.

The resist heat resistance evaluation apparatus 10 is described in detail in the specification of the patent application (1, title of invention "Resist heat resistance evaluation apparatus") dated March 16, 1989 by the present applicant.

In such a resist heat resistance evaluation apparatus 10, a sample 22 having an evaluation pattern of the present invention is placed on the conveyance section 16, conveyed to the heating section 14, heated under predetermined conditions, and then transferred to the conveyance section 16. to transport the sample 22 to the measuring section 12,
The microresist is irradiated with laser light 32a, and the intensity of the diffracted light other than the 0th order is measured.

By performing this measurement at a number of desired temperatures, changes in the shape of the microresist are measured from changes in the intensity of the diffracted light, and the heat resistance of the resist is evaluated.

In the illustrated device, the measurement unit 12 includes a laser light source 3 that emits a laser beam 32a as a coherent light on an optical surface plate 30 supported and fixed to a base 26 by a support 52.
2, and a laser beam 32 emitted from a laser light source 32
mirrors 34a and 34b that reflect a in a predetermined direction, and an ND filter 3 disposed between the mirrors 34a and 34b.
6, a mirror 40 that lowers the laser beam 32a and irradiates the micro-resist of the sample 22 through the opening 38 of the optical surface plate 30, and a light-receiving surface thereof that measures the intensity of the diffracted light from the micro-resist. A photodiode 42 (see FIG. 5) fixed with the photodiode 42 facing downward, and a micrometer 44 for adjusting the position of the photodiode 42 in a uniaxial direction are arranged and configured.

The laser light 32a emitted from the laser light source 32 is
The light is reflected by the mirror 34a, passes through the ND filter 36, the amount of light is adjusted, and is reflected by the mirror 34b, and is reflected by the mirror 40.
The light passes through the opening 3B and enters the microresist formed on the sample 22, which is transported to a predetermined height by the transport section 16.

FIG. 5 shows a cross-sectional view of the vicinity of the opening 38 when measuring the diffracted light of the microresist formed on the sample 22.

The laser beam 32a turned down by the mirror 40 is transmitted to the sample 22 transported to a predetermined position by the transport section 16 (not shown).
The light is incident on the microresist, is diffracted, and the intensity of diffracted light other than the 0th order of this diffracted light is measured by the photodiode 42.

The photodiode 42 is supported by a support member 42a with its light-receiving surface facing downward.

The support member 42a is supported by a support member 42b so as to be movable in the directions of arrows a and b, and this support member 42b is attached to the optical surface plate 3.
It is supported by a member 30a fixed to the lower surface of 0.

Further, the support member 42a is urged in the direction of the arrow by means not shown.

On the other hand, a micrometer 44 is arranged on the opposite side of the member 30a from where the photodiode 42 is arranged. The micrometer 44 has a spindle 44a attached to the support member 42.
The spindle 44a is arranged so as to press the end face of the spindle 44a.
The support member 42a is pushed in the direction of arrow a.

Therefore, by adjusting the length of the spindle 44a, the micrometer 44 makes it possible to move the photodiode 42 in the uniaxial direction indicated by arrows a and b, and adjusts the diffracted light reception position of the photodiode 42 with high precision. enable.

In the resist heat resistance evaluation apparatus 10 to which the present invention is applied, in order to more accurately measure the shape of the microresist, the photodiode 42 measures second-order or higher-order diffracted light. preferable.

In the resist heat resistance evaluation apparatus IO, there is a heating section 1 at the bottom.
4 is placed.

FIG. 6 shows the ship description shown in FIG. 4 with the measuring section 12 omitted.

As shown in FIG. 6, in the heating unit 14, a hot plate 54 for heating the sample 22 is inserted into a recess 48 formed in a heating unit base 46 supported by an X-Y axis stage 28 with a support 50.・It is a fixed hot plate 5
4 and the heating unit base 46 are clamp claws 56 formed on the transfer arm 24 of the transfer unit 16 and on which the sample 22 is placed.
A clamp claw insertion groove 58 corresponding to the above is formed.

Note that protrusions 54a and 54b are arranged on the hot plate 54 for positioning the sample 22 by pressing the orientation flat 108, for example, when the substrate of the sample 22 is a silicon wafer or glass substrate with an orientation flat. Ru. By having such protrusions 54a and 54b,
The sample 22 can be easily positioned by pressing the orientation flat 108 against the protrusion 54a or 54b for alignment. In addition,
In the illustrated example, the protrusion 54a is applied when the evaluation pattern 100 of the present invention is formed perpendicular to the orientation flat 108, and the protrusion 54b is applied when the evaluation pattern 100 is formed parallel to the orientation flat 108. Applies to. Note that the positioning means is not limited to such projections.

The transport unit 16 transports the sample 22, and basically includes a transport unit base 19 and a Z-axis that supports a transport arm 24 that supports and transports the sample 22, which is moved up and down on the transport unit base 19. It consists of a stage 20.

In the resist heat resistance evaluation apparatus 10 of the illustrated example, the measurement section 12 and the heating section 14 described above are arranged vertically separately, and the sample 22 is transported to both by the transport section 16 to determine the intensity of the diffracted light. By configuring the measurement and heating to be performed, the heat of the heating section 14 does not have an adverse effect on the measurement section 12, making it possible to accurately measure the intensity of the diffracted light, and making it possible to evaluate the heat resistance of the resist. It is possible to perform this with high precision.

Moreover, by adopting such a configuration, it is possible to repeatedly perform heating and measurement of the sample 22 with good quality and high accuracy, and it is possible to easily measure the diffracted light intensity of the microresist of the sample 22 at a large number of temperatures. It is possible to quickly and accurately evaluate the heat resistance of a resist.

The transfer arm 24 carries the sample 22, and the Z-axis stage 20
is moved up and down on the transport unit base 19 to transport the sample 22. In the illustrated example, clamp claws 56 for placing the sample 22 are arranged at two locations, and the sample 22 is is placed and supported in the diametrical direction.

In the illustrated example, the Z-axis stage 20 includes a transport unit base 1.
A convex portion 64 is formed to be fitted into the opening 62 of 9, and the convex portion 64 is provided with a nut 6 that forms a means for vertically moving the two-axis stage 20 together with a drive shaft 66 of the transport unit base 19.
8 is placed.

The transport unit base 19 supports the above-mentioned two-axis stage 20,
It is movable up and down, and is fixed to the X-Y axis stage 28, and is arranged in an opening 62 into which the Z-axis stage 2°0 convex part 64 is fitted as described above, and in this opening 62.
A drive shaft 66 is disposed to be screwed into the nut 68.

That is, in the illustrated device, the drive shaft 66 is rotated by a drive source (not shown), so that
The Z-axis stage 20 moves up and down along the opening 62 to transport the sample 22 to the measurement section 12 and the heating section 14.

As a driving source for the drive shaft 66, a high precision motor such as a pulse motor is applied. In the illustrated resist heat resistance evaluation apparatus 10, the heating section 14 and the conveying section 1
6 is supported and fixed to the X-Y axis stage 28.

This X-Y axis stage 28 is configured to be movable in the plane direction on the base 26, so by moving this X-Y axis stage 28, the heating section 14 and the conveyance section 16 are moved on the base 26. It is made movable on the stand 26.

On the other hand, the measurement unit 12 is mounted on the base 26 with the support 52 as described above.
It is supported and fixed.

Therefore, by moving the X-Y axis stage 28,
The sample 22 placed on the transfer arm 24 of the transfer section 16 moves relative to the measurement section 12, and the laser beam 32a on the sample 22 is moved by the movement of the X-Y axis stage 28.
It becomes possible to adjust the irradiation position.

In the drawing example, the heating unit 14 is also supported by the X-Y axis stage 28, so when the transfer arm 24 is lowered to heat the sample 22, the sample 22 is always placed in the center of the hot plate 54. placed.

When evaluating the heat resistance of a microresist by applying the evaluation pattern 100 of the present invention to such a resist heat resistance evaluation apparatus 1o, first, the microresist having the evaluation pattern 1oO of the present invention on a substrate is prepared. The sample 22 on which the sample 22 has been formed is placed on the clamp claw 56 of the transport arm 24.

Note that at this time, the Z-axis stage 2o is lowered, and the sample 22 can be easily aligned by pressing the orientation flat 108 against the protrusion 54a or 54b according to the evaluation pattern 100. .

Next, the preheating temperature of the hot plate 54, the sample 22
The heat treatment conditions are set manually and a start switch (not shown) is turned on.

When the start switch is turned on, the Z-axis stage 20 rises, the sample 22 is separated from the hot plate 54, and the heating section 1
The temperature of the hot plate 54 of No. 4 or the preheating temperature is controlled.

Next, the hot plate 54 of the adding section 14 is set to the temperature conditions for the first measurement, and temperature control is performed.

When the hot plate 54 reaches a predetermined temperature, the transfer section 16
The Z-axis stage 20 is lowered and the sample 22 comes into contact with the hot plate 54, preferably by suction or the like, and the sample 22 is heated for a predetermined period of time.

When the heating is completed, the Z-axis stage 2o rises and stops at a predetermined position of the measurement unit 12, and a laser beam 32a is emitted from the laser light source 32, enters the microresist of the sample 22, is diffracted, and this diffracted light is photodiode 4
2, the intensity of the diffracted light other than the 0th order, preferably the second or higher order diffracted light is measured.

Here, since the sample 22 is to which the evaluation pattern 100 of the present invention is applied, a similar diffraction image can be obtained no matter where on the resist pattern the laser beam 32a is irradiated, and the beam Since the light spreads one-dimensionally, it is preferably incident on the photodiode 42, and since the eighth-order diffracted light is well separated, it is possible to measure the intensity of the diffracted light with very high precision.

On the other hand, during the -th measurement of the diffracted light, the hot plate 54 of the heating section 14 is set to the temperature conditions for the second measurement, and temperature control is performed.

When the first measurement of the diffracted light is completed and the hot plate 54 is heated to the second temperature condition, the Z-axis stage 20 is lowered again to bring the hot plate 54 and the sample 22 into contact for a predetermined time, and the same process is performed. The diffracted light is measured using the following methods.

When measurements under all set conditions are completed in this way, changes in the shape of the microresist are measured from changes in the intensity of the diffracted light, and based on the temperature at which the microresist starts changing its shape and the degree of shape change, the change in the shape of the sample 22 is determined. The heat resistance of the resist will be evaluated and posted.

As above, the evaluation pattern of the present invention has been described in detail based on the preferred embodiment shown in the attached drawings, but the present invention is not limited thereto, and within the scope of the gist of the present invention, Naturally, various changes and improvements may be made.

<Effects of the Invention> The pattern for a resist heat resistance evaluation device of the present invention measures changes in the shape of the microresist by irradiating the microresist with coherent light and measuring the intensity of the diffracted light of the coherent light from the microresist. The present invention is applied to a resist heat resistance evaluation device that evaluates the heat resistance of a resist based on the temperature at which the microresist starts to change shape and the degree of shape change.

Such a pattern for a resist heat resistance evaluation device of the present invention has slit-shaped resist layers having the same width and smaller than the beam diameter, preferably sufficiently small, at equal intervals narrower than the beam diameter, preferably sufficiently narrow. It is formed at intervals.

Therefore, a constant diffraction image can be obtained no matter where the coherent light is irradiated on the microresist.
Moreover, since the diffracted light spreads one-dimensionally, it is efficiently incident on a measuring means such as a photodiode, making it possible to perform highly accurate heat resistance evaluation. Furthermore, this makes it easy to separate the 8th order diffracted light, making it possible to more appropriately evaluate heat resistance.

In addition, since the width and spacing of the resist layer are smaller than the beam diameter of the coherent light, preferably sufficiently small, even if the irradiation position of the coherent light shifts, the obtained diffraction image remains constant and is highly accurate. It is possible to evaluate the heat resistance of

[Brief explanation of drawings]

FIG. 1 is a sectional view of an example in which a pattern for a resist heat resistance evaluation apparatus according to the present invention is formed on a substrate. FIG. 2 is a plan view of FIG. 1. FIG. 3 is a schematic diagram of an example in which a plurality of patterns for a resist heat resistance evaluation apparatus of the present invention are formed using a silicon wafer as a substrate. FIG. 4 is a schematic diagram of a resist heat resistance evaluation apparatus to which the pattern for a resist heat resistance evaluation apparatus of the present invention is applied. FIG. 5 is a cross-sectional view of the measuring section of the resist heat resistance evaluation apparatus shown in FIG. 4. FIG. 6 is a schematic diagram of the resist heat resistance evaluation apparatus shown in FIG. 4, with the measuring section omitted. Explanation of symbols 10... Resist heat resistance evaluation device, 12... Measuring unit, 14... Heating unit, 16... Transport unit, 19... Transport unit base, 20... Z-axis stage, 22... Sample, 24... Transfer arm, 26... Base, 28... X-Y axis stage, 30... Optical surface plate, 30a... Member, 32... Laser light source , 32a... Laser light, 34a, 34b, 40-... Mirror 36... ND filter, 38... Opening, 42... Photodiode, 42a, 42 b... Supporting member, 44. ...Micrometer, 44a...Spindle 46...Heating unit base, 48...Recess, 50.52...Strut, 54...Hot plate, 56...Clamp claw, 58...・Clamp claw insertion groove, 60...Placement part, 62...Opening part, 64...Convex part, 66...Drive shaft, 68...Nut, ・100...Resist heat resistance evaluation device pattern, 10
2... Substrate, 104... Resist layer, 106... Silicon wafer, 108... Orientation flat patent applicant
Fuji Photo Film Co., Ltd. FIG, 1 FIG, 4 Fl (3, 6

Claims (1)

[Claims] (1) A microresist formed in the shape of a substrate is irradiated with coherent light, and the shape change of the microresist is measured by measuring the intensity of diffracted light other than the 0th order of the coherent light diffracted by the microresist. death,
A pattern for a resist heat resistance evaluation device that is applied to a resist heat resistance evaluation device that evaluates the heat resistance of a resist, in which slit-shaped resist layers of the same width are formed at equal intervals, and the width and spacing of the resist layers are , a pattern for a resist heat resistance evaluation device, characterized in that the pattern is smaller than the beam diameter of coherent light irradiated onto the microresist.